TW285768B - - Google Patents

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Publication number
TW285768B
TW285768B TW084111413A TW84111413A TW285768B TW 285768 B TW285768 B TW 285768B TW 084111413 A TW084111413 A TW 084111413A TW 84111413 A TW84111413 A TW 84111413A TW 285768 B TW285768 B TW 285768B
Authority
TW
Taiwan
Prior art keywords
mosfet
drain
voltage
gate
terminal
Prior art date
Application number
TW084111413A
Other languages
English (en)
Chinese (zh)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW285768B publication Critical patent/TW285768B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
TW084111413A 1994-12-14 1995-10-28 TW285768B (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31015294A JP3485655B2 (ja) 1994-12-14 1994-12-14 複合型ｍｏｓｆｅｔ

Publications (1)

Publication Number Publication Date
TW285768B true TW285768B (https=) 1996-09-11

Family

ID=18001791

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084111413A TW285768B (https=) 1994-12-14 1995-10-28

Country Status (6)

Country Link
US (1) US5629542A (https=)
EP (1) EP0717497B1 (https=)
JP (1) JP3485655B2 (https=)
KR (1) KR100390557B1 (https=)
DE (1) DE69525824T2 (https=)
TW (1) TW285768B (https=)

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WO2003100831A2 (en) * 2002-05-24 2003-12-04 Arizona Board Of Regents Integrated zvs synchronous buck dc-dc converter with adaptive control
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US6867640B2 (en) 2003-07-01 2005-03-15 Ami Semiconductor, Inc. Double-sided extended drain field effect transistor, and integrated overvoltage and reverse voltage protection circuit that uses the same
DE10344631B4 (de) * 2003-09-25 2013-12-24 Robert Bosch Gmbh Elektronische Schaltungsanordnung
DE102004039620B4 (de) * 2004-08-06 2006-10-12 Atmel Germany Gmbh Integrierte Schaltung, die eine vorgegebene Spannungsfestigkeit besitzt
JP4504222B2 (ja) * 2005-02-21 2010-07-14 矢崎総業株式会社 過電流検出装置
US7430100B2 (en) * 2005-06-28 2008-09-30 Agere Systems Inc. Buffer circuit with enhanced overvoltage protection
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DE102006006878A1 (de) * 2006-01-20 2007-07-26 Continental Teves Ag & Co. Ohg Schaltungsanordnung mit Rückspeiseschutz zum Schalten in Leistungsanwendungen
FR2896643B1 (fr) * 2006-01-23 2009-01-09 Valeo Equip Electr Moteur Dispositif de commande d'un transistor mos
JP5130906B2 (ja) * 2007-12-26 2013-01-30 サンケン電気株式会社 スイッチ装置
JP2008244487A (ja) * 2008-04-21 2008-10-09 Renesas Technology Corp 複合型ｍｏｓｆｅｔ
JP5493291B2 (ja) * 2008-05-12 2014-05-14 セイコーエプソン株式会社 半導体装置および電子機器
US7756173B2 (en) * 2008-06-20 2010-07-13 Alfrey Anthony J Laser diode driver with adaptive compliance voltage
US8183892B2 (en) 2009-06-05 2012-05-22 Fairchild Semiconductor Corporation Monolithic low impedance dual gate current sense MOSFET
JP2011066139A (ja) 2009-09-16 2011-03-31 Sanken Electric Co Ltd 複合半導体装置
JP2011182591A (ja) * 2010-03-02 2011-09-15 Panasonic Corp 半導体装置
US8537517B1 (en) * 2011-04-26 2013-09-17 Manufacturing Networks Incorporated System and method for fast-acting power protection
JP2013042270A (ja) * 2011-08-12 2013-02-28 Advanced Power Device Research Association トランジスタ回路、双方向スイッチ回路、ダイオード回路及びトランジスタ回路の製造方法
JP5990437B2 (ja) 2012-09-10 2016-09-14 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US9245888B2 (en) * 2012-09-29 2016-01-26 Infineon Technologies Ag Reverse polarity protection for n-substrate high-side switches
KR101440892B1 (ko) * 2013-02-01 2014-09-18 삼성에스디아이 주식회사 캡 커버 및 이를 포함하는 배터리 팩
JP6215652B2 (ja) * 2013-10-28 2017-10-18 エスアイアイ・セミコンダクタ株式会社 基準電圧発生装置
JP6332601B2 (ja) * 2014-01-31 2018-05-30 アルプス電気株式会社 半導体集積回路装置
US10298115B2 (en) * 2014-09-11 2019-05-21 Mitsubishi Electric Corporation Semiconductor device
US9484339B2 (en) 2014-11-26 2016-11-01 Infineon Technologies Ag Smart semiconductor switch
US10164447B2 (en) 2015-02-26 2018-12-25 Renesas Electronics Corporation Semiconductor chip, semiconductor device and battery pack
JP6480795B2 (ja) 2015-04-16 2019-03-13 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた回路装置
JP2017055255A (ja) 2015-09-09 2017-03-16 株式会社東芝 パワー半導体装置
JP6617002B2 (ja) * 2015-10-20 2019-12-04 株式会社 日立パワーデバイス 整流器、それを用いたオルタネータおよび電源
EP3179591A1 (en) * 2015-12-11 2017-06-14 HS Elektronik Systeme GmbH Solid state power controller
JP6284683B1 (ja) * 2016-04-06 2018-03-07 新電元工業株式会社 パワーモジュール
DE102016114002A1 (de) 2016-07-29 2018-02-01 Eberspächer Controls Landau Gmbh & Co. Kg Trennschalteranordnung, insbesondere für ein Bordspannungssystem eines Fahrzeugs
US10978869B2 (en) * 2016-08-23 2021-04-13 Alpha And Omega Semiconductor Incorporated USB type-C load switch ESD protection
DE102016216508A1 (de) 2016-09-01 2018-03-01 Siemens Aktiengesellschaft Steuern eines Halbleiterschalters in einem Schaltbetrieb
US10079539B2 (en) 2017-02-01 2018-09-18 Dialog Semiconductor (Uk) Limited Power supply protection circuit
FR3068836B1 (fr) * 2017-07-07 2019-08-23 Stmicroelectronics (Rousset) Sas Circuit de protection d'un commutateur de puissance
US10962585B2 (en) * 2018-05-09 2021-03-30 Keithley Instruments, Llc Gate charge measurements using two source measure units
JP7026016B2 (ja) * 2018-07-20 2022-02-25 ルネサスエレクトロニクス株式会社 半導体装置および電子制御装置
JP7094181B2 (ja) * 2018-08-29 2022-07-01 日清紡マイクロデバイス株式会社 負荷駆動回路
US11574902B2 (en) * 2019-01-31 2023-02-07 Texas Instruments Incorporated Clamp for power transistor device
JP7232208B2 (ja) * 2020-03-19 2023-03-02 株式会社東芝 半導体装置
JP7732280B2 (ja) * 2021-08-27 2025-09-02 富士電機株式会社 半導体モジュール
US12562733B2 (en) 2023-04-12 2026-02-24 Parker-Hannifin Corporation Power MOSFET driving circuit with transfer curve gate driver and ground shift compensation

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Also Published As

Publication number Publication date
KR960026762A (ko) 1996-07-22
JPH08167838A (ja) 1996-06-25
EP0717497A3 (en) 1998-04-15
DE69525824D1 (de) 2002-04-18
US5629542A (en) 1997-05-13
JP3485655B2 (ja) 2004-01-13
KR100390557B1 (ko) 2003-09-03
EP0717497A2 (en) 1996-06-19
DE69525824T2 (de) 2002-10-31
EP0717497B1 (en) 2002-03-13

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