DE69525824T2 - Zusammengesetzter Leistungs-MOSFET - Google Patents

Zusammengesetzter Leistungs-MOSFET

Info

Publication number
DE69525824T2
DE69525824T2 DE69525824T DE69525824T DE69525824T2 DE 69525824 T2 DE69525824 T2 DE 69525824T2 DE 69525824 T DE69525824 T DE 69525824T DE 69525824 T DE69525824 T DE 69525824T DE 69525824 T2 DE69525824 T2 DE 69525824T2
Authority
DE
Germany
Prior art keywords
mosfet
drain
terminal
gate
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69525824T
Other languages
German (de)
English (en)
Other versions
DE69525824D1 (de
Inventor
Shigeo Otaka
Kozo Sakamoto
Kyouichi Takagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69525824D1 publication Critical patent/DE69525824D1/de
Application granted granted Critical
Publication of DE69525824T2 publication Critical patent/DE69525824T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
DE69525824T 1994-12-14 1995-12-08 Zusammengesetzter Leistungs-MOSFET Expired - Fee Related DE69525824T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31015294A JP3485655B2 (ja) 1994-12-14 1994-12-14 複合型ｍｏｓｆｅｔ

Publications (2)

Publication Number Publication Date
DE69525824D1 DE69525824D1 (de) 2002-04-18
DE69525824T2 true DE69525824T2 (de) 2002-10-31

Family

ID=18001791

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69525824T Expired - Fee Related DE69525824T2 (de) 1994-12-14 1995-12-08 Zusammengesetzter Leistungs-MOSFET

Country Status (6)

Country Link
US (1) US5629542A (https=)
EP (1) EP0717497B1 (https=)
JP (1) JP3485655B2 (https=)
KR (1) KR100390557B1 (https=)
DE (1) DE69525824T2 (https=)
TW (1) TW285768B (https=)

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DE102016216508A1 (de) 2016-09-01 2018-03-01 Siemens Aktiengesellschaft Steuern eines Halbleiterschalters in einem Schaltbetrieb

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JP5130906B2 (ja) * 2007-12-26 2013-01-30 サンケン電気株式会社 スイッチ装置
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JP5493291B2 (ja) * 2008-05-12 2014-05-14 セイコーエプソン株式会社 半導体装置および電子機器
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JP5990437B2 (ja) 2012-09-10 2016-09-14 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US9245888B2 (en) * 2012-09-29 2016-01-26 Infineon Technologies Ag Reverse polarity protection for n-substrate high-side switches
KR101440892B1 (ko) * 2013-02-01 2014-09-18 삼성에스디아이 주식회사 캡 커버 및 이를 포함하는 배터리 팩
JP6215652B2 (ja) * 2013-10-28 2017-10-18 エスアイアイ・セミコンダクタ株式会社 基準電圧発生装置
JP6332601B2 (ja) * 2014-01-31 2018-05-30 アルプス電気株式会社 半導体集積回路装置
US10298115B2 (en) * 2014-09-11 2019-05-21 Mitsubishi Electric Corporation Semiconductor device
US9484339B2 (en) 2014-11-26 2016-11-01 Infineon Technologies Ag Smart semiconductor switch
US10164447B2 (en) 2015-02-26 2018-12-25 Renesas Electronics Corporation Semiconductor chip, semiconductor device and battery pack
JP6480795B2 (ja) 2015-04-16 2019-03-13 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた回路装置
JP2017055255A (ja) 2015-09-09 2017-03-16 株式会社東芝 パワー半導体装置
JP6617002B2 (ja) * 2015-10-20 2019-12-04 株式会社 日立パワーデバイス 整流器、それを用いたオルタネータおよび電源
EP3179591A1 (en) * 2015-12-11 2017-06-14 HS Elektronik Systeme GmbH Solid state power controller
JP6284683B1 (ja) * 2016-04-06 2018-03-07 新電元工業株式会社 パワーモジュール
DE102016114002A1 (de) 2016-07-29 2018-02-01 Eberspächer Controls Landau Gmbh & Co. Kg Trennschalteranordnung, insbesondere für ein Bordspannungssystem eines Fahrzeugs
US10978869B2 (en) * 2016-08-23 2021-04-13 Alpha And Omega Semiconductor Incorporated USB type-C load switch ESD protection
US10079539B2 (en) 2017-02-01 2018-09-18 Dialog Semiconductor (Uk) Limited Power supply protection circuit
FR3068836B1 (fr) * 2017-07-07 2019-08-23 Stmicroelectronics (Rousset) Sas Circuit de protection d'un commutateur de puissance
US10962585B2 (en) * 2018-05-09 2021-03-30 Keithley Instruments, Llc Gate charge measurements using two source measure units
JP7026016B2 (ja) * 2018-07-20 2022-02-25 ルネサスエレクトロニクス株式会社 半導体装置および電子制御装置
JP7094181B2 (ja) * 2018-08-29 2022-07-01 日清紡マイクロデバイス株式会社 負荷駆動回路
US11574902B2 (en) * 2019-01-31 2023-02-07 Texas Instruments Incorporated Clamp for power transistor device
JP7232208B2 (ja) * 2020-03-19 2023-03-02 株式会社東芝 半導体装置
JP7732280B2 (ja) * 2021-08-27 2025-09-02 富士電機株式会社 半導体モジュール
US12562733B2 (en) 2023-04-12 2026-02-24 Parker-Hannifin Corporation Power MOSFET driving circuit with transfer curve gate driver and ground shift compensation

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016216508A1 (de) 2016-09-01 2018-03-01 Siemens Aktiengesellschaft Steuern eines Halbleiterschalters in einem Schaltbetrieb

Also Published As

Publication number Publication date
KR960026762A (ko) 1996-07-22
JPH08167838A (ja) 1996-06-25
EP0717497A3 (en) 1998-04-15
DE69525824D1 (de) 2002-04-18
US5629542A (en) 1997-05-13
TW285768B (https=) 1996-09-11
JP3485655B2 (ja) 2004-01-13
KR100390557B1 (ko) 2003-09-03
EP0717497A2 (en) 1996-06-19
EP0717497B1 (en) 2002-03-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee