JPS559444A - Rectifier element - Google Patents
Rectifier elementInfo
- Publication number
- JPS559444A JPS559444A JP8223878A JP8223878A JPS559444A JP S559444 A JPS559444 A JP S559444A JP 8223878 A JP8223878 A JP 8223878A JP 8223878 A JP8223878 A JP 8223878A JP S559444 A JPS559444 A JP S559444A
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- circuit
- drain
- rectifier element
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To improve efficiency by using an IGFET as a rectifier element and reducing the loss of a MOSFET type rectifier element than a usual transistor.
CONSTITUTION: If a voltage and polarity detecting circuit 30 which detects the potential difference between a source terminal 5 and a drain terminal including its polarity and sends signals corresponding to the plus or minus of the potential difference to a terminal 10 and a circuit 9 which changes the substrate potential 8 to the source potential or the drain potential according to the signals electrically are provided in the same pellet with a MOSFET, and the correspondence of the signals of the detecting circuit 30 and the operations of the changeover circuit 9 is set previously, the circuits function as a rectifier element. In this case, the connecting point 31 of the detecting circuit 30 with the terminal 5 and the connecting point of the circuit with a terminal 6 are insulated with each other. If an enhancement MOSFET and the drain current line type area of an IGFET are used in this construction, forward loss is little and switching loss is also little. Further, the drain voltage has positive temperature dependence and thermorunaway rarely occurs.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8223878A JPS559444A (en) | 1978-07-06 | 1978-07-06 | Rectifier element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8223878A JPS559444A (en) | 1978-07-06 | 1978-07-06 | Rectifier element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS559444A true JPS559444A (en) | 1980-01-23 |
JPS6149823B2 JPS6149823B2 (en) | 1986-10-31 |
Family
ID=13768822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8223878A Granted JPS559444A (en) | 1978-07-06 | 1978-07-06 | Rectifier element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS559444A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0717497A2 (en) | 1994-12-14 | 1996-06-19 | Hitachi, Ltd. | Compounded power MOSFET |
-
1978
- 1978-07-06 JP JP8223878A patent/JPS559444A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0717497A2 (en) | 1994-12-14 | 1996-06-19 | Hitachi, Ltd. | Compounded power MOSFET |
US5629542A (en) * | 1994-12-14 | 1997-05-13 | Hitachi, Ltd. | Compounded power MOSFET |
Also Published As
Publication number | Publication date |
---|---|
JPS6149823B2 (en) | 1986-10-31 |
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