JPS559444A - Rectifier element - Google Patents

Rectifier element

Info

Publication number
JPS559444A
JPS559444A JP8223878A JP8223878A JPS559444A JP S559444 A JPS559444 A JP S559444A JP 8223878 A JP8223878 A JP 8223878A JP 8223878 A JP8223878 A JP 8223878A JP S559444 A JPS559444 A JP S559444A
Authority
JP
Japan
Prior art keywords
terminal
circuit
drain
rectifier element
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8223878A
Other languages
Japanese (ja)
Other versions
JPS6149823B2 (en
Inventor
Yuki Shimada
Hideyoshi Sato
Susumu Segawa
Kenji Hideshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8223878A priority Critical patent/JPS559444A/en
Publication of JPS559444A publication Critical patent/JPS559444A/en
Publication of JPS6149823B2 publication Critical patent/JPS6149823B2/ja
Granted legal-status Critical Current

Links

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To improve efficiency by using an IGFET as a rectifier element and reducing the loss of a MOSFET type rectifier element than a usual transistor.
CONSTITUTION: If a voltage and polarity detecting circuit 30 which detects the potential difference between a source terminal 5 and a drain terminal including its polarity and sends signals corresponding to the plus or minus of the potential difference to a terminal 10 and a circuit 9 which changes the substrate potential 8 to the source potential or the drain potential according to the signals electrically are provided in the same pellet with a MOSFET, and the correspondence of the signals of the detecting circuit 30 and the operations of the changeover circuit 9 is set previously, the circuits function as a rectifier element. In this case, the connecting point 31 of the detecting circuit 30 with the terminal 5 and the connecting point of the circuit with a terminal 6 are insulated with each other. If an enhancement MOSFET and the drain current line type area of an IGFET are used in this construction, forward loss is little and switching loss is also little. Further, the drain voltage has positive temperature dependence and thermorunaway rarely occurs.
COPYRIGHT: (C)1980,JPO&Japio
JP8223878A 1978-07-06 1978-07-06 Rectifier element Granted JPS559444A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8223878A JPS559444A (en) 1978-07-06 1978-07-06 Rectifier element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8223878A JPS559444A (en) 1978-07-06 1978-07-06 Rectifier element

Publications (2)

Publication Number Publication Date
JPS559444A true JPS559444A (en) 1980-01-23
JPS6149823B2 JPS6149823B2 (en) 1986-10-31

Family

ID=13768822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8223878A Granted JPS559444A (en) 1978-07-06 1978-07-06 Rectifier element

Country Status (1)

Country Link
JP (1) JPS559444A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0717497A2 (en) 1994-12-14 1996-06-19 Hitachi, Ltd. Compounded power MOSFET

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0717497A2 (en) 1994-12-14 1996-06-19 Hitachi, Ltd. Compounded power MOSFET
US5629542A (en) * 1994-12-14 1997-05-13 Hitachi, Ltd. Compounded power MOSFET

Also Published As

Publication number Publication date
JPS6149823B2 (en) 1986-10-31

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