JP2017055255A - パワー半導体装置 - Google Patents
パワー半導体装置 Download PDFInfo
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- JP2017055255A JP2017055255A JP2015177695A JP2015177695A JP2017055255A JP 2017055255 A JP2017055255 A JP 2017055255A JP 2015177695 A JP2015177695 A JP 2015177695A JP 2015177695 A JP2015177695 A JP 2015177695A JP 2017055255 A JP2017055255 A JP 2017055255A
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- mosfet
- semiconductor device
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- diode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 230000015556 catabolic process Effects 0.000 claims description 12
- 230000003071 parasitic effect Effects 0.000 claims description 11
- 238000010992 reflux Methods 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 2
- 230000002441 reversible effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000011084 recovery Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
- Electronic Switches (AREA)
Abstract
Description
図1は、本発明の第1の実施形態を示すパワー半導体装置1の回路図である。
図5は、第2の実施形態を示すパワー半導体装置の回路図である。
Q2 第2のMOSFET
L 負荷
D1 高速ダイオード
D ダイオード
1 第1のパワー半導体装置
2 第2のパワー半導体装置
9 寄生ダイオード
10 寄生ダイオード
11 共通ソース
12 端子
13 端子
14 共通ゲート端子
15 ゲート抵抗
16 ゲート抵抗
17 共通ゲート端子
18 端子
Claims (7)
- 第1のソース、第1のドレイン、及び第1のゲートを有する第1導電型の第1のMOSFETと、
第2のドレイン、前記第1のソースに電気的に接続された第2のソース、及び前記第1のゲートに電気的に接続された第2のゲートを有する第1導電型の第2のMOSFETと、
前記第1及び前記第2のドレインの間に接続されたダイオードと
を備え、
前記第1のMOSFETは、前記第2のMOSFETよりも耐圧が高いことを特徴とするパワー半導体装置。 - 前記第1導電型は、Nチャネル型である、請求項1記載のパワー半導体装置。
- 前記第2のMOSFETは、前記第1のMOSFETよりも低オン抵抗である、請求項2記載のパワー半導体装置。
- 前記ダイオードは、前記第1及び第2のMOSFETの寄生ダイオードよりも動作速度が速い、請求項1記載のパワー半導体装置。
- 前記ダイオードは、SiCショットキーバリアダイオードである、請求項4記載のパワー半導体装置。
- 前記共通接続されたゲートの端子と、第1の端子と、第2の端子の3端子のみで駆動制御される、請求項1記載のパワー半導体装置。
- 前記第1のMOSFET及び第2のMOSFETは、それぞれのゲートが共通の端子に接続されたパワーMOSFETであって、
前記第1のMOSFET及び第2のMOSFETがオンの時には第1のドレインから第2のドレインに電流が流れ、前記第1MOSFET及び第2MOSFETがオフで、還流電流が流れる時には、前記ダイオードを介して、第2のドレインから第1のドレインに電流が流れることを特徴とする、請求項1記載のパワー半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015177695A JP2017055255A (ja) | 2015-09-09 | 2015-09-09 | パワー半導体装置 |
US15/061,017 US9793261B2 (en) | 2015-09-09 | 2016-03-04 | Power semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015177695A JP2017055255A (ja) | 2015-09-09 | 2015-09-09 | パワー半導体装置 |
Publications (1)
Publication Number | Publication Date |
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JP2017055255A true JP2017055255A (ja) | 2017-03-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015177695A Pending JP2017055255A (ja) | 2015-09-09 | 2015-09-09 | パワー半導体装置 |
Country Status (2)
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US (1) | US9793261B2 (ja) |
JP (1) | JP2017055255A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10230364B2 (en) * | 2017-04-26 | 2019-03-12 | Futurewei Technologies, Inc. | Hybrid power devices |
CN108964458B (zh) * | 2017-05-25 | 2023-04-21 | 太阳能安吉科技有限公司 | 高效开关电路 |
GB2563686A (en) * | 2017-06-23 | 2018-12-26 | Nidec Control Techniques Ltd | Method and apparatus for monitoring a semiconductor switch |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013017064A (ja) * | 2011-07-05 | 2013-01-24 | Sanken Electric Co Ltd | スイッチング素子の保護回路 |
JP2014075976A (ja) * | 2014-01-16 | 2014-04-24 | Mitsubishi Electric Corp | 電動機駆動装置、及び冷凍空調装置 |
JP2014212212A (ja) * | 2013-04-18 | 2014-11-13 | Jx日鉱日石エネルギー株式会社 | スイッチング装置、故障検知装置、太陽光発電システム、及びスイッチング方法 |
JP2015073147A (ja) * | 2013-10-01 | 2015-04-16 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3485655B2 (ja) | 1994-12-14 | 2004-01-13 | 株式会社ルネサステクノロジ | 複合型mosfet |
JPH11215835A (ja) | 1998-01-26 | 1999-08-06 | Kumamoto Prefecture | 電力用非接地半導体スイッチの駆動回路 |
JP5521796B2 (ja) * | 2009-11-26 | 2014-06-18 | 富士電機株式会社 | 整流回路 |
US9263439B2 (en) * | 2010-05-24 | 2016-02-16 | Infineon Technologies Americas Corp. | III-nitride switching device with an emulated diode |
US20120262220A1 (en) | 2011-04-13 | 2012-10-18 | Semisouth Laboratories, Inc. | Cascode switches including normally-off and normally-on devices and circuits comprising the switches |
US9064722B2 (en) * | 2012-03-13 | 2015-06-23 | International Business Machines Corporation | Breakdown voltage multiplying integration scheme |
-
2015
- 2015-09-09 JP JP2015177695A patent/JP2017055255A/ja active Pending
-
2016
- 2016-03-04 US US15/061,017 patent/US9793261B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013017064A (ja) * | 2011-07-05 | 2013-01-24 | Sanken Electric Co Ltd | スイッチング素子の保護回路 |
JP2014212212A (ja) * | 2013-04-18 | 2014-11-13 | Jx日鉱日石エネルギー株式会社 | スイッチング装置、故障検知装置、太陽光発電システム、及びスイッチング方法 |
JP2015073147A (ja) * | 2013-10-01 | 2015-04-16 | 三菱電機株式会社 | 半導体装置 |
JP2014075976A (ja) * | 2014-01-16 | 2014-04-24 | Mitsubishi Electric Corp | 電動機駆動装置、及び冷凍空調装置 |
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US9793261B2 (en) | 2017-10-17 |
US20170069622A1 (en) | 2017-03-09 |
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