DE69330455T2 - Überspannungsschutzstruktur für vertikale Halbleiterkomponenten - Google Patents

Überspannungsschutzstruktur für vertikale Halbleiterkomponenten

Info

Publication number
DE69330455T2
DE69330455T2 DE69330455T DE69330455T DE69330455T2 DE 69330455 T2 DE69330455 T2 DE 69330455T2 DE 69330455 T DE69330455 T DE 69330455T DE 69330455 T DE69330455 T DE 69330455T DE 69330455 T2 DE69330455 T2 DE 69330455T2
Authority
DE
Germany
Prior art keywords
protection structure
semiconductor components
surge protection
vertical semiconductor
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69330455T
Other languages
English (en)
Other versions
DE69330455D1 (de
Inventor
Jean Barret
Daniel Quessada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Application granted granted Critical
Publication of DE69330455D1 publication Critical patent/DE69330455D1/de
Publication of DE69330455T2 publication Critical patent/DE69330455T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69330455T 1992-11-24 1993-11-19 Überspannungsschutzstruktur für vertikale Halbleiterkomponenten Expired - Fee Related DE69330455T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9214478A FR2698486B1 (fr) 1992-11-24 1992-11-24 Structure de protection contre les surtensions directes pour composant semiconducteur vertical.

Publications (2)

Publication Number Publication Date
DE69330455D1 DE69330455D1 (de) 2001-08-23
DE69330455T2 true DE69330455T2 (de) 2002-04-18

Family

ID=9436115

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69330455T Expired - Fee Related DE69330455T2 (de) 1992-11-24 1993-11-19 Überspannungsschutzstruktur für vertikale Halbleiterkomponenten

Country Status (5)

Country Link
US (3) US5543645A (de)
EP (1) EP0599745B1 (de)
JP (1) JP3418436B2 (de)
DE (1) DE69330455T2 (de)
FR (1) FR2698486B1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006047243A1 (de) * 2006-05-15 2007-11-22 Infineon Technologies Ag Bordnetz mit mindestens einem Leistungstransistor und Verfahren zum Schutz eines Bordnetzes

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2698486B1 (fr) * 1992-11-24 1995-03-10 Sgs Thomson Microelectronics Structure de protection contre les surtensions directes pour composant semiconducteur vertical.
JP3216743B2 (ja) * 1993-04-22 2001-10-09 富士電機株式会社 トランジスタ用保護ダイオード
EP0696054B1 (de) * 1994-07-04 2002-02-20 STMicroelectronics S.r.l. Verfahren zur Herstellung von Leistungsbauteilen hoher Dichte in MOS-Technologie
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US5847429A (en) * 1995-07-31 1998-12-08 Integrated Device Technology, Inc. Multiple node ESD devices
DE69531783T2 (de) * 1995-10-09 2004-07-15 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno - Corimme Herstellungsverfahren für Leistungsanordnung mit Schutzring
EP0772242B1 (de) 1995-10-30 2006-04-05 STMicroelectronics S.r.l. Leistungsbauteil in MOS-Technologie mit einer einzelnen kritischen Grösse
DE69533134T2 (de) * 1995-10-30 2005-07-07 Stmicroelectronics S.R.L., Agrate Brianza Leistungsbauteil hoher Dichte in MOS-Technologie
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
DE69518653T2 (de) * 1995-12-28 2001-04-19 St Microelectronics Srl MOS-Technologie-Leistungsanordnung in integrierter Struktur
US5913130A (en) 1996-06-12 1999-06-15 Harris Corporation Method for fabricating a power device
US5811338A (en) * 1996-08-09 1998-09-22 Micron Technology, Inc. Method of making an asymmetric transistor
FR2764136B1 (fr) * 1997-05-28 1999-08-13 Sgs Thomson Microelectronics Protection contre des surtensions d'un transistor mos de puissance integre
FR2764735B1 (fr) * 1997-06-17 1999-08-27 Sgs Thomson Microelectronics Protection du caisson logique d'un composant incluant un transistor mos de puissance integre
US6781804B1 (en) 1997-06-17 2004-08-24 Sgs-Thomson Microelectronics S.A. Protection of the logic well of a component including an integrated MOS power transistor
EP0961325B1 (de) 1998-05-26 2008-05-07 STMicroelectronics S.r.l. MOS-Technologie-Leistungsanordnung mit hoher Integrationsdichte
FR2791193B1 (fr) * 1999-03-16 2004-07-09 St Microelectronics Sa Procede de controle du fonctionnement d'une pompe de charge capacitive et dispositif de pompe de charge capacitive correspondant
DE19918028A1 (de) * 1999-04-21 2000-11-02 Siemens Ag Halbleiter-Bauelement
JP2001267431A (ja) * 2000-03-17 2001-09-28 Nec Corp 半導体集積回路装置及びその製造方法
US7708751B2 (en) 2004-05-21 2010-05-04 Ethicon Endo-Surgery, Inc. MRI biopsy device
US8932233B2 (en) 2004-05-21 2015-01-13 Devicor Medical Products, Inc. MRI biopsy device
US9638770B2 (en) 2004-05-21 2017-05-02 Devicor Medical Products, Inc. MRI biopsy apparatus incorporating an imageable penetrating portion
ATE440381T1 (de) * 2005-01-07 2009-09-15 Ami Semiconductor Belgium Bvba Hybride esd-klemme
US7317204B2 (en) * 2005-01-13 2008-01-08 Samsung Electronics Co., Ltd. Test structure of semiconductor device
US8093713B2 (en) 2007-02-09 2012-01-10 Infineon Technologies Ag Module with silicon-based layer

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JPS54112179A (en) * 1978-02-23 1979-09-01 Sony Corp Semiconductor device
JP2572210B2 (ja) * 1984-11-20 1997-01-16 三菱電機株式会社 縦型パワ−ｍｏｓ電界効果型半導体装置
JPS61137368A (ja) * 1984-12-10 1986-06-25 Hitachi Ltd 半導体装置
JPS61296770A (ja) * 1985-06-25 1986-12-27 Nec Corp 絶縁ゲ−ト電界効果型半導体装置
JPS62144357A (ja) * 1985-12-19 1987-06-27 Fuji Electric Co Ltd スイツチング用半導体装置
JPH0685441B2 (ja) * 1986-06-18 1994-10-26 日産自動車株式会社 半導体装置
IT1213411B (it) * 1986-12-17 1989-12-20 Sgs Microelettronica Spa Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione.
JP2508826B2 (ja) * 1987-11-24 1996-06-19 日本電気株式会社 半導体装置
JPH02128474A (ja) * 1988-11-08 1990-05-16 Nec Corp 電界効果トランジスタ
US5119162A (en) * 1989-02-10 1992-06-02 Texas Instruments Incorporated Integrated power DMOS circuit with protection diode
FR2649828B1 (fr) * 1989-07-17 1991-10-31 Sgs Thomson Microelectronics Circuit integre vdmos/logique comprenant un transistor vertical deplete et une diode zener
EP0416805B1 (de) * 1989-08-30 1996-11-20 Siliconix, Inc. Transistor mit Spannungsbegrenzungsanordnung
JPH0397269A (ja) * 1989-09-11 1991-04-23 Fuji Electric Co Ltd 電流制限回路を内蔵する伝導度変調型ｍｏｓｆｅｔ
JPH03105977A (ja) * 1989-09-20 1991-05-02 Hitachi Ltd 半導体装置
JPH03156977A (ja) * 1989-11-15 1991-07-04 Sanyo Electric Co Ltd 縦型ｍｏｓｆｅｔ
JPH03229469A (ja) * 1990-02-05 1991-10-11 Matsushita Electron Corp 縦型ｍｏｓ電界効果トランジスタ
JP2692350B2 (ja) * 1990-04-02 1997-12-17 富士電機株式会社 Ｍｏｓ型半導体素子
JPH04132266A (ja) * 1990-09-21 1992-05-06 Fuji Electric Co Ltd 半導体装置
JP3064457B2 (ja) * 1991-03-08 2000-07-12 関西日本電気株式会社 スイッチ回路およびゲート電圧クランプ型半導体装置
GB2257830B (en) * 1991-07-12 1995-04-05 Matsushita Electric Works Ltd Low output-capacity, double-diffused field effect transistor
JP3111576B2 (ja) * 1992-01-06 2000-11-27 富士電機株式会社 半導体装置
GB9207849D0 (en) * 1992-04-09 1992-05-27 Philips Electronics Uk Ltd A semiconductor device
FR2698486B1 (fr) * 1992-11-24 1995-03-10 Sgs Thomson Microelectronics Structure de protection contre les surtensions directes pour composant semiconducteur vertical.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006047243A1 (de) * 2006-05-15 2007-11-22 Infineon Technologies Ag Bordnetz mit mindestens einem Leistungstransistor und Verfahren zum Schutz eines Bordnetzes

Also Published As

Publication number Publication date
JP3418436B2 (ja) 2003-06-23
FR2698486A1 (fr) 1994-05-27
EP0599745A1 (de) 1994-06-01
US5780895A (en) 1998-07-14
FR2698486B1 (fr) 1995-03-10
EP0599745B1 (de) 2001-07-18
US5543645A (en) 1996-08-06
JPH06224436A (ja) 1994-08-12
US5563436A (en) 1996-10-08
DE69330455D1 (de) 2001-08-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee