DE69309321D1 - Elektroden-Struktur für Halbleiteranordnung - Google Patents

Elektroden-Struktur für Halbleiteranordnung

Info

Publication number
DE69309321D1
DE69309321D1 DE69309321T DE69309321T DE69309321D1 DE 69309321 D1 DE69309321 D1 DE 69309321D1 DE 69309321 T DE69309321 T DE 69309321T DE 69309321 T DE69309321 T DE 69309321T DE 69309321 D1 DE69309321 D1 DE 69309321D1
Authority
DE
Germany
Prior art keywords
semiconductor device
electrode structure
electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69309321T
Other languages
English (en)
Other versions
DE69309321T2 (de
Inventor
Hideki Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Application granted granted Critical
Publication of DE69309321D1 publication Critical patent/DE69309321D1/de
Publication of DE69309321T2 publication Critical patent/DE69309321T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
DE69309321T 1992-01-14 1993-01-13 Elektroden-Struktur für Halbleiteranordnung Expired - Fee Related DE69309321T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP516892 1992-01-14

Publications (2)

Publication Number Publication Date
DE69309321D1 true DE69309321D1 (de) 1997-05-07
DE69309321T2 DE69309321T2 (de) 1997-08-14

Family

ID=11603710

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69309321T Expired - Fee Related DE69309321T2 (de) 1992-01-14 1993-01-13 Elektroden-Struktur für Halbleiteranordnung

Country Status (4)

Country Link
US (1) US5644165A (de)
EP (1) EP0552023B1 (de)
JP (1) JPH05259509A (de)
DE (1) DE69309321T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor
JPH07263751A (ja) * 1994-03-24 1995-10-13 Sharp Corp Ｉｉ−ｖｉ族化合物半導体装置及びその製造方法
JPH07263372A (ja) * 1994-03-24 1995-10-13 Sharp Corp Ｉｉ−ｖｉ族化合物半導体装置およびその製造方法
JP3461611B2 (ja) * 1995-03-24 2003-10-27 正紀 村上 Ｉｉ−ｖｉ族化合物半導体装置及びその製造方法
US6087725A (en) * 1997-09-29 2000-07-11 Matsushita Electric Industrial Co., Ltd. Low barrier ohmic contact for semiconductor light emitting device
US6657300B2 (en) * 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
CN104181773A (zh) * 2014-07-22 2014-12-03 北京金达雷科技有限公司 一种用于激光选择性金属化的光敏树脂、制备及活化方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4123295A (en) * 1977-01-14 1978-10-31 California Institute Of Technology Mercury chalcogenide contact for semiconductor devices
US4548681A (en) * 1984-02-03 1985-10-22 The Standard Oil Company (Ohio) Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te
US4910154A (en) * 1988-12-23 1990-03-20 Ford Aerospace Corporation Manufacture of monolithic infrared focal plane arrays
JP2559492B2 (ja) * 1989-07-05 1996-12-04 シャープ株式会社 化合物半導体発光素子の製造方法
US5045897A (en) * 1990-03-14 1991-09-03 Santa Barbara Research Center Quaternary II-VI materials for photonics
JPH04199887A (ja) * 1990-11-29 1992-07-21 Matsushita Electric Ind Co Ltd ｐｎ接合素子及びその製造方法並びに青色発光ダイオード素子
US5293074A (en) * 1992-05-05 1994-03-08 North American Philips Corporation Ohmic contact to p-type ZnSe
US5818072A (en) * 1992-05-12 1998-10-06 North Carolina State University Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same

Also Published As

Publication number Publication date
EP0552023B1 (de) 1997-04-02
JPH05259509A (ja) 1993-10-08
EP0552023A1 (de) 1993-07-21
DE69309321T2 (de) 1997-08-14
US5644165A (en) 1997-07-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee