IT1227104B - Circuito integrato autoprotetto da inversioni di polarita' della batteria di alimentazione - Google Patents

Circuito integrato autoprotetto da inversioni di polarita' della batteria di alimentazione

Info

Publication number
IT1227104B
IT1227104B IT8822085A IT2208588A IT1227104B IT 1227104 B IT1227104 B IT 1227104B IT 8822085 A IT8822085 A IT 8822085A IT 2208588 A IT2208588 A IT 2208588A IT 1227104 B IT1227104 B IT 1227104B
Authority
IT
Italy
Prior art keywords
self
integrated circuit
power battery
polarity inversions
protected integrated
Prior art date
Application number
IT8822085A
Other languages
English (en)
Other versions
IT8822085A0 (it
Inventor
Claudio Contiero
Bruno Murari
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8822085A priority Critical patent/IT1227104B/it
Publication of IT8822085A0 publication Critical patent/IT8822085A0/it
Priority to EP89112711A priority patent/EP0360991B1/en
Priority to DE68917839T priority patent/DE68917839T2/de
Priority to US07/385,721 priority patent/US5126911A/en
Priority to JP1235840A priority patent/JP2905227B2/ja
Application granted granted Critical
Publication of IT1227104B publication Critical patent/IT1227104B/it

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
    • H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
    • H02H11/003—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection using a field effect transistor as protecting element in one of the supply lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
IT8822085A 1988-09-27 1988-09-27 Circuito integrato autoprotetto da inversioni di polarita' della batteria di alimentazione IT1227104B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8822085A IT1227104B (it) 1988-09-27 1988-09-27 Circuito integrato autoprotetto da inversioni di polarita' della batteria di alimentazione
EP89112711A EP0360991B1 (en) 1988-09-27 1989-07-12 An integrated circuit self-protected against reversal of the supply battery polarity
DE68917839T DE68917839T2 (de) 1988-09-27 1989-07-12 Integrierte Schaltung mit selbsttätigem Schutz gegen Umkehr der Polarität der Energieversorgungsbatterie.
US07/385,721 US5126911A (en) 1988-09-27 1989-07-26 Integrated circuit self-protected against reversal of the supply battery polarity
JP1235840A JP2905227B2 (ja) 1988-09-27 1989-09-13 電源バッテリの極性の反転に対して自己保護されている集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8822085A IT1227104B (it) 1988-09-27 1988-09-27 Circuito integrato autoprotetto da inversioni di polarita' della batteria di alimentazione

Publications (2)

Publication Number Publication Date
IT8822085A0 IT8822085A0 (it) 1988-09-27
IT1227104B true IT1227104B (it) 1991-03-15

Family

ID=11191276

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8822085A IT1227104B (it) 1988-09-27 1988-09-27 Circuito integrato autoprotetto da inversioni di polarita' della batteria di alimentazione

Country Status (5)

Country Link
US (1) US5126911A (it)
EP (1) EP0360991B1 (it)
JP (1) JP2905227B2 (it)
DE (1) DE68917839T2 (it)
IT (1) IT1227104B (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9559681B2 (en) 2014-01-31 2017-01-31 Alps Electric Co., Ltd. Semiconductor integrated circuit device

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US5151767A (en) * 1991-05-03 1992-09-29 North American Philips Corp. Power integrated circuit having reverse-voltage protection
DE4137452A1 (de) * 1991-11-14 1993-05-19 Bosch Gmbh Robert Verpolschutzanordnung fuer leistungsendstufen-feldeffekt-transistoren
EP0561451B1 (en) * 1992-03-16 1998-08-12 Koninklijke Philips Electronics N.V. Integrated semiconductor circuit including protection means
JP3216743B2 (ja) * 1993-04-22 2001-10-09 富士電機株式会社 トランジスタ用保護ダイオード
US5434739A (en) * 1993-06-14 1995-07-18 Motorola, Inc. Reverse battery protection circuit
DE4432957C1 (de) * 1994-09-16 1996-04-04 Bosch Gmbh Robert Schaltmittel
JP3485655B2 (ja) * 1994-12-14 2004-01-13 株式会社ルネサステクノロジ 複合型ｍｏｓｆｅｔ
DE19509024C1 (de) * 1995-03-13 1996-10-31 Sgs Thomson Microelectronics Integrierte Halbleiterschaltung (steuerbarer Halbleiterschalter) mit Schutz gegen zu negatives Potential
JP3593825B2 (ja) * 1996-11-08 2004-11-24 ソニー株式会社 半導体装置及びその製造方法、並びに固体撮像素子の製造方法
DE19803040A1 (de) * 1997-01-31 1998-08-06 Int Rectifier Corp Leistungsschaltung
US6781804B1 (en) * 1997-06-17 2004-08-24 Sgs-Thomson Microelectronics S.A. Protection of the logic well of a component including an integrated MOS power transistor
DE19817790A1 (de) * 1998-04-21 1999-12-09 Siemens Ag Verpolschutzschaltung
DE19938403C2 (de) * 1999-08-13 2002-03-14 Micronas Gmbh Schaltung
US6611410B1 (en) 1999-12-17 2003-08-26 Siemens Vdo Automotive Inc. Positive supply lead reverse polarity protection circuit
US6353345B1 (en) * 2000-04-04 2002-03-05 Philips Electronics North America Corporation Low cost half bridge driver integrated circuit with capability of using high threshold voltage DMOS
TW490907B (en) * 2000-11-14 2002-06-11 Silicon Touch Tech Inc Circuit with protection for inverted connection of power source polarity
US6650520B2 (en) * 2001-10-26 2003-11-18 Koninklijke Philips Electronics N.V. Power supply reverse bias protection circuit for protecting both analog and digital devices coupled thereto
US7327122B2 (en) * 2002-07-17 2008-02-05 Mathews Associates, Inc. Battery heating circuit
US20060012342A1 (en) * 2002-07-17 2006-01-19 Mathews Associates, Inc. Self-heating battery that automatically adjusts its heat setting
KR100448915B1 (ko) * 2002-07-26 2004-09-16 삼성전자주식회사 고전압 출력회로의 풀업 트랜지스터 어레이
US7012793B2 (en) * 2002-12-06 2006-03-14 Delta Electronics, Inc. Power converter with polarity reversal and inrush current protection circuit
FR2908570B1 (fr) * 2006-11-10 2009-03-06 E2V Semiconductors Soc Par Act Etage de sortie logique de circuit integre protege contre une inversion de batterie
JP2008244487A (ja) * 2008-04-21 2008-10-09 Renesas Technology Corp 複合型ｍｏｓｆｅｔ
US10522675B2 (en) 2012-01-25 2019-12-31 Infineon Technologies Ag Integrated circuit including field effect transistor structures with gate and field electrodes and methods for manufacturing and operating an integrated circuit
US8891218B2 (en) * 2012-10-12 2014-11-18 The Boeing Company Fault tolerant fail-safe link
JP6480795B2 (ja) 2015-04-16 2019-03-13 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた回路装置
JP7294127B2 (ja) * 2019-12-26 2023-06-20 株式会社オートネットワーク技術研究所 給電制御装置

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IT1226439B (it) * 1988-07-05 1991-01-15 Sgs Thomson Microelectronics Circuito elettronico protetto da inversioni di polarita' della batteria di alimentazione.
IT1226438B (it) * 1988-07-05 1991-01-15 Sgs Thomson Microelectronics Circuito elettronico con dispositivo di protezione da variazioni di tensione della batteria di alimentazione.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9559681B2 (en) 2014-01-31 2017-01-31 Alps Electric Co., Ltd. Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPH02122665A (ja) 1990-05-10
DE68917839T2 (de) 1994-12-22
EP0360991B1 (en) 1994-08-31
EP0360991A2 (en) 1990-04-04
IT8822085A0 (it) 1988-09-27
JP2905227B2 (ja) 1999-06-14
US5126911A (en) 1992-06-30
DE68917839D1 (de) 1994-10-06
EP0360991A3 (en) 1991-03-20

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