KR970072101A - 좁은 구멍의 충전 및 결정상으로 배열된 라이너층을 이용한 금속 상호연결선 형성 - Google Patents
좁은 구멍의 충전 및 결정상으로 배열된 라이너층을 이용한 금속 상호연결선 형성 Download PDFInfo
- Publication number
- KR970072101A KR970072101A KR1019960032822A KR19960032822A KR970072101A KR 970072101 A KR970072101 A KR 970072101A KR 1019960032822 A KR1019960032822 A KR 1019960032822A KR 19960032822 A KR19960032822 A KR 19960032822A KR 970072101 A KR970072101 A KR 970072101A
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- South Korea
- Prior art keywords
- layer
- sputter
- substrate
- refractory metal
- plasma
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 title claims description 12
- 239000002184 metal Substances 0.000 title claims description 12
- 230000015572 biosynthetic process Effects 0.000 title 1
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims abstract 45
- 239000000758 substrate Substances 0.000 claims abstract 28
- 238000000151 deposition Methods 0.000 claims abstract 17
- 238000005240 physical vapour deposition Methods 0.000 claims abstract 16
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract 8
- 239000010703 silicon Substances 0.000 claims abstract 8
- 238000004544 sputter deposition Methods 0.000 claims abstract 6
- 230000000149 penetrating effect Effects 0.000 claims abstract 2
- 239000003870 refractory metal Substances 0.000 claims 25
- 239000010936 titanium Substances 0.000 claims 15
- 229910052719 titanium Inorganic materials 0.000 claims 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 8
- 150000002736 metal compounds Chemical class 0.000 claims 7
- 230000006698 induction Effects 0.000 claims 6
- 150000004767 nitrides Chemical class 0.000 claims 5
- 150000001875 compounds Chemical class 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 230000003746 surface roughness Effects 0.000 claims 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract
알루미늄 스퍼터 공정은 특히 절연층을 관통하는 높은 종횡비의 통로(via)와 접촉을 형성하는 데 유익하고 전기 이동이 잘 일어나지 않는 상호연결선을 형성하는 데에도 유용하다. 라이너층 또는 방지층은 유도 카풀된 플라즈마로 처리된 것과 같은 고밀도 플라즈마(HDP)의 물리적 증기증착(PVA. 스퍼터라고도 불리움) 공정으로 먼저 증착된다. 접촉 기저부가 실리콘 성분에 연결되면 라이너층의 첫번째 부대층은 Ti층으로 이는 실리콘 기판에 규화된다. 두번째 부대층은 TiN으로 구성되고 이는 원하지 않는 구성분이 밑에 있는 실리콘 기판으로 이동하는 것을 방지하는 층으로 작용할 뿐만 아니라 HDP 공정과 바이어스된 웨이퍼로 증착시 고밀도의 평탄한 결정 구조를 형성하게 한다. 세번째 부대층은 Ti으로 구성되며 TiN에서 Ti로 점차 변화되는 것이 바람직하다. 알루미늄층은 HDP가 아닌 표준공정으로 라이너층 위에 증착된다. 라이너층은 좁은 플러그 구멍을 충전하는동안에 알루미늄 증착의 최고 온 과정을 비교적 저온인 320-500℃에서 수행하게 하고 350-420℃가 바람직하다. 실리콘 기판에 확산되는 것을 효과적으로 방지하는 층을 형성하기 위해서 TiN층의 안닐이 필요없다. 본 발명의 공정으로 형성된 수평 상호연결선은 전기 이동을 하지 않는다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제8도는 본 발명의 라이너층 증착 후에 금속으로 충전된 접촉의 단면도이다.
Claims (58)
- 금속을 기판에 스퍼터하는 방법으로, 상기 기판 위에 내화금속 화합물로 구성된 첫째층을 고밀도 플라즈마에서 스퍼터 증착하는 첫단계, 그리고 상기 첫층 위에 두번째 금속층을 스퍼터로 증착하는 두번째 단계로 구성된 방법.
- 제1항에 있어, 상기 두번째 층은 주요축을 따라 전기를 전도하는 원소로 구성된 방법.
- 제1항에 있어, 상기 첫번째 단계의 상기 고밀도 플라즈마 보다 상당히 작은 밀도를 가진 플라즈마로 두번째 단계를 수행하는 방법.
- 제3항에 있어서, 상기 고밀도 플라즈마의 공간을 에워싸는 유도코일에 의해 상기고밀도 플라즈마가 적어도 부분적으로 활성화되는 첫번째 반응 챔버에서 상기 첫단계를 수행하는 방법.
- 제1항에 있어서, 상기 고밀도 플라즈마의 공간을 에워싸는 유도코일에 의해 상기 고밀도 플라즈마가 적어도 부분적으로 활성화되는 첫번째 챔버에서 상기 첫단계를 수행하는 방법.
- 제5항에 있어서, 상기 금속의 적어도 일부분으로 구성된 스퍼터 대음극판과 상기 기판을 지지하는 받침대 사이에 가해진 전압에 의해 주로 활성화되는 플라즈마 반응 챔버에서 상기 두번째 단계가 수행되는 방법.
- 제1항에 있어, 상기 내화 금속 화합물이 내화 금속의 질화물을 포함하는 방법.
- 제7항에 있어, 상기 내화금속의 상기 화합물이 TiN을 포함하는 방법.
- 제1항에 있어서, 더나아가 세번째 단계가 첫번째 단계와 두번째 단계 사이에 수행되며, 상기 첫번째 층위에 세번째 층을 고밀도 플라즈마에서 스퍼터 증착하여 상기 세번째 층의 적어도 일부가 적어도 한가지 내화 금속으로 주로 구성된 상기 두번째 층을 직면하게 하는 세번째 단계를 포함하는 방법.
- 제9항에 있어, 상기 적어도 한가지 내화 금속이 Ti을 포함하는 방법.
- 제9항에 있어, 상기 기판은 기판층 위에 높인 절연층으로 형성되며 적어도 1:1의 종횡비를 가지는 상기 절연층을 관통하는 구멍을 포함하고 상기 첫번째, 두번째, 그리고 세번째 단계에서 상기 첫번째, 두번째 그리고 세번째 층들을 상기 구멍에 증착하는 방법.
- 제9항에 있어, 상기 기판층은 실리콘으로 구성되고 더나아가 상기 기판층 위에 적어도 한 종류의 두번째 내화금속으로 주로 구성된 네번재 층을 스퍼터 증착하는 네번째 단계를 포함하는 방법.
- 제12항에 있어, 상기 적어도 한가지 두번째 내화성 금속으로 Ti을 포함하는 방법.
- 제1항에 있어, 상기 두번째 증착 단계에 있어, 상기 기판이 첫번째 온도에서 유지되는 동안에 첫번째 부대층을 스퍼터 증착하는 첫번째 부속단계와 상기기판이 상기 첫번째 온도보다 높은 두번째 온도로 유지되는 동안에 두번째 부대층이 스퍼터 증착되는 부속단계로 구성된 방법.
- 제13항에 있어, 상기 금속층이 알루미늄으로 구성되며 상기 첫번째 온도가 250℃이하이고 상기 두번째 온도가 350-470℃ 범위에 있는 방법.
- 제14항에 있어, 상기 두번째 온도가 430℃ 이하인 방법.
- 제1항에 있어, 상기 챔버 주위를 에워싸고 첫번째 RF 전원으로부터 전력을 제공받는 유도 코일을 포함하는 플라즈마 반응 챔버에서 상기 첫번째 단계가 수행되고 직류 전원이 티타늄으로 구성된 스퍼터 대음극판과 상기 기판을 지지하는 받침대 사이를 연결하는 방법.
- 제17항에 있어서, 상기 고밀도 플라즈마를 생성하는 동안에 상기 RF 전원이 상기 코일에 RF 전력 PRF를 제공하며 상기 직류 전원은 직류 전력 PDC를 상기 대음극판에 제공하여 PRF가 PDC의 20%이거나 이 이상인 방법.
- 제17항에 있어, 상기 플라즈마 반응 챔버는 더 나아가 RF 바이어스를 상기 받침대에 제공하는 두번째 RF 전원을 포함하므로 상기 고밀도 플라즈마에서 직류 자기 바이어스 VBIAS를 발생시키고 상기 고밀도 플라즈마의 상기 생성 동안에, 다음 조건이 만족되는 방법 : (PRF/PDC)/VBIAS10
- 제19항에 있어, (PRF/PDC)/VBIAS15인 방법.
- 제1항에 있어, 상기 첫번째 스퍼터 단계가 상기 고밀도 플라즈마를 포함하고 1mTorr 이상의 압력을 가진 챔버에서 수행되는 방법.
- 제21항에 있어, 상기 압력이 10mTorr 이상인 방법.
- 제22항에 있어, 상기 압력이 30mTorr 이상인 방법.
- 제23항에 있어, 상기 압력이 100mTorr 이상인 방법.
- 제22항에 있어, 상기 압력이 100mTorr 이상인 방법.
- 금속층을 스퍼터하는 방법으로, 기판을 플라즈마를 생성하기 위한 유도코일을 포함하는 첫번째 스퍼터 챔버에 배치, 상기 첫번째 스퍼터 챔버 내에서 적어도 하나의 내화금속 화합물로 구성되는 첫번째 층을 상기 기판에 증착하는 첫번째 부속단계를 포함하고 상기 첫번째 증착 단계에서 상기 유도코일에 의해 형성된 상기 플라즈마를 이용하는 첫번째 단계, 상기 첫번째 스퍼터 챔버에서 결합된 두개의 전극에 의해 주로 플라즈마가 형성되는 두번째 스퍼터 챔버로 상기 기판의 이전, 그리고 상기의 적어도 두개 전극들에 의해 생성된 상기 플라즈마를 사용하여 상기 첫번째 층위에 금속으로 구성된 두번째 층을 증착하는 단계들로 구성된 방법.
- 제26항에 있어, 상기 화합물은 상기 내화금속의 질화물을 포함하는 방법.
- 제26항에 있어, 상기 적어도 한 내화금속이 Ti을 포함하는 방법.
- 제26항에 있어, 첫번째 단계는 적어도 한가지 두번째 내화금속으로 주로구성된 두번째 부대층을 상기 첫번째 부속단계 이전에 증착하는 두번째 부속단계를 포함하는 방법.
- 제29항에 있어, 상기 적어도 한가지 두번째 내화금속은 Ti을 포함하는 방법.
- 접촉 구멍의 기저부분 옆에 실리콘 부분을 포함하는 기판 위에 형성된 절연층에 만들어진 상기 접촉구멍의 스퍼터 충전 방법으로, 상기 접촉 구멍을 포함하는 상기 기판 위에 금속 티타늄으로 구성된 첫번째 층의 스퍼터 증착을 고밀도 플라즈마에서 수행하는 첫번째 단계, 상기 첫번째 층 위에 TiN으로 구성된 두번째 층의 스퍼터 증착을 고밀도 플라즈마에서 수행하는 첫번째 단계, 상기 두번째 층 위에 상부가 금속 티타늄으로 구성된 세번째 층의 스퍼터 증착을 수행하는 세번째 단계, 그리고 상기 세번째 층 위에 주로 알루미늄으로 구성된 네번째 층을 스퍼터 증착하는 네번째 단계의 단계들로 구성된 방법.
- 제31항에 있어, 상기 첫번째, 두번째, 그리고 세번째 단계들은 첫번째 스퍼터 챔버에서 수행되고 상기 네번째 단계는 두번째 스퍼터 챔버에서 수행되는 방법.
- 제32항에 있어, 상기 네번째 단계는 티타늄으로 구성된 스퍼터 대음극판과 상기 기판을 지지하는 받침대 사이에 가해진 직류 전기 신호에 의해 주로 생성되는 플라즈마에서 수행되는 방법.
- 제31항에 있어, 두번째 단계로서 상기 기판과 티타늄으로 구성된 스퍼터 대음극판 표면으로 둘러싸인 스퍼터 챔버에 질소 기체의 공급, 그리고 TiN이 상기 기판 위에 반응적으로 스퍼터되도록 상기 질소 존재하에서 상기 스퍼터 대음극판의 스퍼터를 포함하는 방법.
- 제34항에 있어, 상기 세번째 단계에서는 상기 두번째 단계와 세번째 단계 사이에 플라즈마를 계속하는 동안에 상기 챔버에 상기 질소의 공급을 중단하여 TiN에서 Ti로 변화하는 TiNX의 구성으로 세번째 층이 증착되는 방법.
- 제31항에 있어, 상기 두번째 단계가 1-100mTorr의 압력으로 유지되고 상기 고밀도 플라즈마를 포함하는 챔버에 수행되는 방법.
- 제36항에 있어, 상기 압력이 30mTorr이거나 그 이상인 방법.
- 절연층 위에 상호 연결부를 형성하는 방법으로, 고밀도 플라즈마에서 절연층 위에 내화 금속 화합물로 구성되는 라이너층의 증착, 상기 라이너층 위에 금속층의 증착, 그리고 금속층을 수평으로 연장하는 전기 상호 연결로의 사진평판적 구조형성을 포함하는 단계들로 구성된 방법.
- 제38항에 있어, 상기 내화 금속 화합물이 Ti과 N로 구성된 방법.
- 제39항에 있어, 상기 금속층이 알루미늄으로 구성된 방법.
- 접촉 구조로서, 실리콘 표면을 포함하는 기판, 상기 기판 위에 형성되며 상기 실리콘 표면까지 연장되는 구멍이 관통하는 절연층 상기 구멍의 벽과 밑바닥 위에 증착되고 첫번째 내화금속을 함유한 첫번째 층, 첫번째 층 위에 증착되고 두번째 내화금속 화합물을 함유한 두번째 층, 두번째 층 위에 증착되고 세번째 내화금속을 함유한 세번재 층, 그리고 상기 세번재 층 위에 증착된 네번째 금속층으로 구성되고 상기 세번째 층의 RMS표면 거칠음은 1.5nm 이상이 아닌 접촉 구조.
- 제41항에 있어, 상기 네번째 층이 상기 구멍을 대부분 충전하는 접촉 구조.
- 제41항에 있어, 상기 두번째 내화 금속 화합물은 상기 세번째 내화금속의 질화물을 함유하는 접촉 구조.
- 제43항에 있어, 상기 첫번째, 두번째, 그리고 세번째 내화 금속 각각은 티타늄을 포함하는 접촉 구조.
- 제41항에 있어, 네번째 층은 알루미늄으로 구성된 접촉 구조.
- 상호 연결 구조로서, 표면 절연 부분을 포함하는 기판, 상기 기판 위에 증착되고 첫번째 내화 금속 화합물을 함유하는 첫번째 층, 그리고 첫번째 층 위에 증착되고 적어도 수평으로 연장하는 하나의 전기 연결의 구조로 형성된 두번째 금속층으로 구성되고 상기 첫번째 층의 RMS 표면 거칠음이 1.5nm이상이 아닌 상호 연결 구조.
- 제46항에 있어, 상기 화합물이 내화 질화물인 상호연결 구조.
- 제47항에 있어, 상기 첫번째 내화 금속은 티타늄을 포함하는 상호 연결 구조.
- 제46항에 있어, 상기 기판 위에 증착된 세번째 층을 포함하고, 두번째 내화 금속을 포함하고, 그 위에 상기 첫번째 층에 의해 증착되는 상호 연결 구조.
- 제49항에 있어, 상기 화합물이 내화 질화물인 상호 연결 구조.
- 제50항에 있어, 상기 첫번째 그리고 두번째 내화 금속이 티타늄을 포함하는 상호 연결 구조.
- (a) 티타늄 함유 대음극판과 질소 기체 공급원을 포함하는 첫번째 고밀도 플라즈마 PVD 반응 챔버, (b) 상기 첫번째 PVD 반응 챔버보다 훨씬 낮은 최고 밀도를 가진 플라즈마를 생성시킬 수 있고, 알루미늄 함유 대음극판이 있는 두번째 PVD 반응 챔버, (c) 상기 첫번째와 두번째 PVD 반응 챔버에 선택적으로 연결할 수 있고 진공을 깨뜨리지 않고 각각의 상기 PVD 반응 챔버 속으로 그리고 밖으로 기판을 선택적으로 이동할 수 있는 기판 취급기를 적어도 하나 포함하는 적어도 한개의 이동 챔버, 및 (d)상기 첫번째 그리고 두번째 PVD 반응 챔버들과 상기 로봇의 작동을 제어하는 제어기로 구성된 반도체 처리 장치에서, 상기 첫번째 PVD 반응 챔버에서 티타늄과 질소로 구성된 라이너층을 기판위에 증착하고 나서, 상기 로봇이 상기 기판을 상기 첫번째 PVD 반응 챔버로부터 상기 두번째 반응 챔버로 이동하고 나서, 그 후에 상기 두번째 PVD 반응 챔버에서 상기 라이너층 위에 알루미늄층을 증착하는 단계들을 포함하는 제어 프로그램을 상기 제어기에 부하하는 부하 수단을 포함하는 발명.
- 제52항에 있어, 부하 수단은 상기 제어 프로그램이 기록되고 이동가능 기록가능한 매체로 구성된 반도체 처리 장치.
- 제52항에 있어, 상기 첫번째 PVD 반응 챔버는 유도코일을 포함하여 상기 첫번쩨 PVD 반응 챔버에서 RF 전력을 플라즈마에 카풀하고, 상기 두번째 PVD 반응 챔버는 두개의 전극을 포함하여 상기 두번째 PVD 반응 챔버에서 주로 플라즈마를 생성하기 위해 직류 전력을 카풀하는 반도체 처리 장치.
- 통합된 제조 공구로, 고밀도 플라즈마의 생성을 위해 RF 전원에 카풀된 유도코일을 포함하는 첫번째 PVD 반응 챔버, 주로 플라즈마의 생성을 위해 RF 전원에 카풀된 2개의 전극을 포함하는 두번째 PVD 반응 챔버, 진공상태로 펌프될 수 있으며 기판을 첫번째와 두번째 반응기 안으로 그리고 밖으로 기판들을 이동하는 로봇을 포함하고 상기 첫번째 그리고 두번째 반응기에 선택적으로 열리는 이동 챔버와 상기 첫번째 및 두번째 반응기와 상기 로봇을 제어하는 제어기로 구성된 공구.
- 제55항에 있어, 상기 첫번째 반응기는 내화금속으로 구성된 PVD 대음극판을 포함하는 공구.
- 제56항에 있어, 상기 내화 금속으로 티타늄을 포함하는 공구.
- 제57항에 있어, 상기 두번째 반응기는 알루미늄으로 구성된 대음극판을 포함하는 공구.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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US08/511,825 US5962923A (en) | 1995-08-07 | 1995-08-07 | Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches |
US08/628,835 US6217721B1 (en) | 1995-08-07 | 1996-04-05 | Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer |
US08/628,835 | 1996-04-05 |
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KR1019960032822A KR100442023B1 (ko) | 1995-08-07 | 1996-08-07 | 좁은구멍의충전및결정상으로배열된라이너층을이용한금속상호연결부형성 |
KR1020040074509A KR100512155B1 (ko) | 1995-08-07 | 2004-09-17 | 반도체 웨이퍼내의 접촉점, 비아 및 트렌치를 저온에서금속으로 충전하고 평탄화하는 장치 |
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-
1995
- 1995-08-07 US US08/511,825 patent/US5962923A/en not_active Expired - Lifetime
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1996
- 1996-04-05 US US08/628,835 patent/US6217721B1/en not_active Expired - Fee Related
- 1996-08-02 EP EP96305722A patent/EP0758148A3/en not_active Withdrawn
- 1996-08-07 KR KR1019960032821A patent/KR100489916B1/ko not_active IP Right Cessation
- 1996-08-07 JP JP20863696A patent/JP3193875B2/ja not_active Expired - Fee Related
- 1996-08-07 KR KR1019960032822A patent/KR100442023B1/ko not_active IP Right Cessation
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1997
- 1997-10-06 US US08/944,140 patent/US6313027B1/en not_active Expired - Lifetime
- 1997-10-06 US US08/939,741 patent/US6136095A/en not_active Expired - Lifetime
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2001
- 2001-04-11 JP JP2001113150A patent/JP2001358091A/ja active Pending
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2002
- 2002-03-06 US US10/092,664 patent/US20020089027A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
---|---|
US6136095A (en) | 2000-10-24 |
JPH09162293A (ja) | 1997-06-20 |
JP2001358091A (ja) | 2001-12-26 |
JP3193875B2 (ja) | 2001-07-30 |
KR970013059A (ko) | 1997-03-29 |
JP2008261059A (ja) | 2008-10-30 |
EP0758148A3 (en) | 1999-08-18 |
EP0758148A2 (en) | 1997-02-12 |
US20020089027A1 (en) | 2002-07-11 |
KR100489916B1 (ko) | 2005-09-15 |
US5962923A (en) | 1999-10-05 |
US6313027B1 (en) | 2001-11-06 |
US6217721B1 (en) | 2001-04-17 |
KR100512155B1 (ko) | 2005-09-05 |
KR100442023B1 (ko) | 2004-10-25 |
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