CN102453855B - 壳体及其制造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 20
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000376 reactant Substances 0.000 claims description 3
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- 229910052760 oxygen Inorganic materials 0.000 claims description 2
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- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 6
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- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
- 229960001866 silicon dioxide Drugs 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229960000935 dehydrated alcohol Drugs 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
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- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0664—Carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/3154—Of fluorinated addition polymer from unsaturated monomers
- Y10T428/31544—Addition polymer is perhalogenated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Abstract
本发明提供一种壳体，包括铝或铝合金基体、形成于该铝或铝合金基体上的电绝缘层及具有耐腐蚀性的颜色层。所述壳体具有良好的耐腐蚀性及装饰性外观。本发明还提供了所述壳体的制造方法，包括以下步骤：提供铝或铝合金基体；于该铝或铝合金基体上磁控溅射形成电绝缘层；于该电绝缘层上磁控溅射形成具有耐腐蚀性的颜色层。
Description
技术领域
本发明涉及一种壳体及其制造方法。
背景技术
真空镀膜技术（PVD）是一个非常环保的成膜技术。以真空镀膜的方式所形成的膜层具有高硬度、高耐磨性、良好的化学稳定性、与基体结合牢固以及亮丽的金属外观等优点，因此真空镀膜在铝、铝合金、镁、镁合金及不锈钢等金属基材表面装饰性处理领域的应用越来越广。
然而，由于铝或铝合金的标准电极电位很低，且PVD装饰性涂层本身不可避免的会存在微小的孔隙，因此，直接于铝或铝合金基体表面镀覆诸如TiN层、TiNO层、TiCN层、CrN层、CrNO层、CrCN层或其他具有耐腐蚀性的PVD装饰性涂层，不能有效防止所述铝或铝合金基体发生电化学腐蚀，同时该PVD装饰性涂层本身也会发生异色、脱落等现象。
发明内容
鉴于此，提供一种具有良好的耐腐蚀性及装饰性外观的壳体。
另外，还提供一种上述壳体的制造方法。
一种壳体，包括铝或铝合金基体、依次形成于该铝或铝合金基体上的电绝缘层及具有耐腐蚀性的颜色层，该电绝缘层的厚度为2.0～3.0μm，该颜色层为TiN层、TiNO层、TiCN层、CrN层、CrNO层或CrCN层。
一种壳体的制造方法，包括以下步骤：
提供铝或铝合金基体；
于该铝或铝合金基体上磁控溅射形成电绝缘层，该电绝缘层的厚度为2.0～3.0μm；
于该电绝缘层上磁控溅射形成具有耐腐蚀性的颜色层。
所述壳体的制造方法，通过磁控溅射法依次于铝或铝合金基体上形成氧化硅或氧化铝的电绝缘层及具有耐腐蚀性的颜色层。当壳体处于腐蚀性介质中时，由于所述电绝缘层隔绝了铝或铝合金基体与颜色层，使壳体无法形成发生电化学腐蚀所需要的阴极与阳极，从而提高了壳体的耐腐蚀性。所述壳体耐腐蚀性提高的同时，还可避免所述颜色层发生异色、脱落等失效现象，从而使该壳体经长时间使用后仍具有较好的装饰性外观。
附图说明
图1为本发明较佳实施例的壳体的剖视图。
主要元件符号说明
壳体 10
铝或铝合金基体 11
电绝缘层 13
颜色层 15
具体实施方式
请参阅图1，本发明一较佳实施例的壳体10包括铝或铝合金基体11、依次形成于该铝或铝合金基体11上的电绝缘层13及颜色层15。该壳体10可以为3C电子产品的壳体，也可为眼镜边框、建筑用件及汽车等交通工具的零部件等。
所述电绝缘层13为二氧化硅（SiO2）层或氧化铝（Al2O3）层，其厚度为2.0～3.0μm。可以理解的，所述电绝缘层13还可以为聚四氟乙烯层或其他绝缘层。所述电绝缘层13的颜色以不影响颜色层15的色调为佳，比如可为银色、白色及灰白色等浅色调。
所述颜色层15为TiN层，其厚度为0.5～3.0μm。可以理解，所述颜色层15还可以为TiNO层、TiCN层、CrN层、CrNO层、CrCN层或其他具有耐腐蚀性的装饰性膜层。
所述电绝缘层13及颜色层15均可通过磁控溅射法沉积形成。可以理解的，所述电绝缘层13及颜色层15也可以通过化学气相沉积、喷涂等方式形成。
本发明一较佳实施例的制造所述壳体10的方法主要包括如下步骤：
提供铝或铝合金基体11，并对铝或铝合金基体11依次进行研磨及电解抛光。电解抛光后，再依次用去离子水和无水乙醇对该铝或铝合金基体11表面进行擦拭。再将擦拭后的铝或铝合金基体11放入盛装有丙酮溶液的超声波清洗器中进行震动清洗，以除去铝或铝合金基体11表面的杂质和油污等。清洗完毕后吹干备用。
对经上述处理后的铝或铝合金基体11的表面进行氩气等离子清洗，进一步去除铝或铝合金基体11表面的油污，以改善铝或铝合金基体11表面与后续涂层的结合力。该等离子清洗的具体操作及工艺参数可为：将铝或铝合金基体11放入一磁控溅射镀膜机（图未示）的镀膜室内，对该镀膜室进行抽真空处理至真空度为1.0×10-3Pa，以250～500sccm（标准状态毫升/分钟）的流量向镀膜室中通入纯度为99.999%的氩气，于铝或铝合金基体11上施加-300～-800V的偏压，对铝或铝合金基体11表面进行等离子清洗，清洗时间为3～10min。
在对铝或铝合金基体11进行等离子清洗后，于该铝或铝合金基体11上形成电绝缘层13。所述电绝缘层13为二氧化硅层或氧化铝层。形成该电绝缘层13的具体操作及工艺参数如下：以氩气为工作气体，调节氩气流量为150～300sccm，再向镀膜室中通入流量为50～200sccm的纯度为99.999%的反应气体氧气，设置占空比为30%～70%，于铝或铝合金基体11上施加-50～-300V的偏压，并加热镀膜室至50～150℃（即溅射温度为50～150℃）；选择Si及Al中的任一种为靶材，设置其功率为5～13kw，沉积电绝缘层13。沉积该电绝缘层13的时间为30～120min。
形成所述电绝缘层13后，于该铝或铝合金基体11上形成颜色层15，该颜色层15为TiN层。形成所述TiN层的的具体操作及工艺参数如下：关闭所述Si靶或Al靶的电源，开启已置于所述镀膜机内的一钛靶的电源，设置其功率5～10kw，保持上述氩气的流量不变，并向镀膜室内通入流量为10～120sccm的反应气体氮气，沉积颜色层15。沉积该颜色层15的时间为20～60min。
可以理解，所述颜色层15还可以为TiNO层、TiCN层、CrN层、CrNO层、CrCN层或其他具有耐腐蚀性的装饰性膜层。
本发明较佳实施方式的壳体10的制造方法，通过磁控溅射法依次于铝或铝合金基体11上形成氧化硅或氧化铝的电绝缘层13及颜色层15。当壳体10处于腐蚀性介质中时，由于所述电绝缘层13隔绝了铝或铝合金基体11与颜色层15，使壳体10无法形成发生电化学腐蚀所需要的阴极与阳极，从而提高了壳体10的耐腐蚀性。所述壳体10耐腐蚀性提高的同时，还可避免所述颜色层15发生异色、脱落等失效现象，从而使该壳体10经长时间使用后仍具有较好的装饰性外观。
Claims (8)
1.一种壳体，包括铝或铝合金基体及形成于该铝或铝合金基体上的具有耐腐蚀性的颜色层，其特征在于：该壳体还包括形成于所述铝或铝合金基体与颜色层之间的电绝缘层，所述电绝缘层直接形成于所述铝或铝合金基体上，以隔绝铝或铝合金基体与颜色层，该电绝缘层的厚度为2.0～3.0μm，该颜色层为TiNO层、TiCN层、CrNO层或CrCN层。
2.如权利要求1所述的壳体，其特征在于：该电绝缘层为二氧化硅层或氧化铝层。
3.如权利要求1所述的壳体，其特征在于：该电绝缘层为聚四氟乙烯层。
4.如权利要求1所述的壳体，其特征在于：所述电绝缘层及颜色层以磁控溅射镀膜法形成。
5.一种壳体的制造方法，包括以下步骤：
提供铝或铝合金基体；
于该铝或铝合金基体上磁控溅射直接形成电绝缘层，该电绝缘层用于隔绝铝或铝合金基体与颜色层，该电绝缘层的厚度为2.0～3.0μm；
于该电绝缘层上磁控溅射形成具有耐腐蚀性的颜色层，该颜色层为TiNO层、TiCN层、CrNO层或CrCN层。
6.如权利要求5所述的壳体的制造方法，其特征在于：所述电绝缘层为氧化硅层或氧化铝层。
7.如权利要求6所述的壳体的制造方法，其特征在于：磁控溅射所述电绝缘层的工艺参数为：以氩气为工作气体，其流量为150～300sccm，以氧气为反应气体，其流量为50～200sccm，设置占空比为30％～70％，于铝或铝合金基体上施加-50～-300V的偏压，选择Si及Al中的任一种为靶材，设置其功率为5～13kw，溅射温度为50～150℃。
8.如权利要求7所述的壳体的制造方法，其特征在于：所述电绝缘层的溅射时间为30～120min。
Priority Applications (2)
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| CN201010523201.1A CN102453855B (zh) | 2010-10-28 | 2010-10-28 | 壳体及其制造方法 |
| US13/180,711 US20120107606A1 (en) | 2010-10-28 | 2011-07-12 | Article made of aluminum or aluminum alloy and method for manufacturing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102345102A (zh) * | 2010-08-04 | 2012-02-08 | 鸿富锦精密工业（深圳）有限公司 | 真空镀膜件及其制备方法 |
| CN103953772B (zh) * | 2014-04-21 | 2017-03-15 | 宁波丰基特种阀门有限公司 | 碳化钨氮化铬复合涂层的超硬耐磨阀门 |
| CN105970165A (zh) * | 2016-05-17 | 2016-09-28 | 杭州朗旭新材料科技有限公司 | 一种黑色绝缘薄膜元件及其制造方法 |
| CN106987803B (zh) * | 2017-04-27 | 2018-09-18 | 深圳金曜来科技有限公司 | 铝合金基材的镀膜 |
| JP2022158691A (ja) * | 2021-04-02 | 2022-10-17 | トヨタ自動車株式会社 | 電気調色膜および車両外板 |
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| CN1971787A (zh) * | 2005-11-23 | 2007-05-30 | 雅铂兴业股份有限公司 | 采用阳极处理工艺使电解电容器铝壳体披覆绝缘膜的方法 |
| CN101135051A (zh) * | 2006-08-29 | 2008-03-05 | 周文俊 | 金属或陶瓷基材金属化处理方法 |
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| DE4442824C1 (de) * | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
| US5962923A (en) * | 1995-08-07 | 1999-10-05 | Applied Materials, Inc. | Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches |
| CN1168421A (zh) * | 1996-05-28 | 1997-12-24 | 王俭 | 在不锈钢、合金表面制备绝缘层 |
| EP1672969A1 (en) * | 2003-10-07 | 2006-06-21 | Neomax Materials Co., Ltd. | Substrate and method for producing same |
| CN2793884Y (zh) * | 2005-03-16 | 2006-07-05 | 江苏三星化工有限公司 | 一种带有高分子材料涂层的绝缘吊挂 |
| US20070077364A1 (en) * | 2005-10-05 | 2007-04-05 | Aba Con International Limited | Method to coat insulation film on aluminum body of electrolytic capacitor |
| KR101496171B1 (ko) * | 2007-12-14 | 2015-02-27 | 시게이트 테크놀로지 엘엘씨 | 자기박막구조체, 자기기록매체 및 그 제조방법 |
| JP4629151B2 (ja) * | 2009-03-10 | 2011-02-09 | 富士フイルム株式会社 | 光電変換素子及び太陽電池、光電変換素子の製造方法 |
| CN101764121B (zh) * | 2010-01-08 | 2012-12-05 | 湖南大学 | 层间绝缘叠层复合材料及其制备方法 |
| CN102465255A (zh) * | 2010-11-11 | 2012-05-23 | 鸿富锦精密工业（深圳）有限公司 | 壳体及其制造方法 |
| CN102465269A (zh) * | 2010-11-12 | 2012-05-23 | 鸿富锦精密工业（深圳）有限公司 | 铝合金防腐处理方法及铝合金制品 |
| CN102756513A (zh) * | 2011-04-28 | 2012-10-31 | 鸿富锦精密工业（深圳）有限公司 | 铝合金或镁合金防腐处理方法及铝合金或镁合金制品 |
| CN102758179A (zh) * | 2011-04-28 | 2012-10-31 | 鸿富锦精密工业（深圳）有限公司 | 铝合金防腐处理方法及其铝合金制品 |
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| CN1971787A (zh) * | 2005-11-23 | 2007-05-30 | 雅铂兴业股份有限公司 | 采用阳极处理工艺使电解电容器铝壳体披覆绝缘膜的方法 |
| CN101135051A (zh) * | 2006-08-29 | 2008-03-05 | 周文俊 | 金属或陶瓷基材金属化处理方法 |
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| CN102453855A (zh) | 2012-05-16 |
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