JP6801200B2 - 炭化珪素半導体素子の製造方法 - Google Patents
炭化珪素半導体素子の製造方法 Download PDFInfo
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- JP6801200B2 JP6801200B2 JP2016053117A JP2016053117A JP6801200B2 JP 6801200 B2 JP6801200 B2 JP 6801200B2 JP 2016053117 A JP2016053117 A JP 2016053117A JP 2016053117 A JP2016053117 A JP 2016053117A JP 6801200 B2 JP6801200 B2 JP 6801200B2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 69
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 66
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 107
- 229910052751 metal Inorganic materials 0.000 claims description 65
- 239000002184 metal Substances 0.000 claims description 65
- 239000010410 layer Substances 0.000 claims description 54
- 229910052759 nickel Inorganic materials 0.000 claims description 53
- 230000004888 barrier function Effects 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 32
- 239000011229 interlayer Substances 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 14
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 13
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 29
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 15
- 238000000137 annealing Methods 0.000 description 15
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- IZFOVFBRJMXESP-UHFFFAOYSA-N acetic acid;nitrous acid Chemical compound ON=O.CC(O)=O IZFOVFBRJMXESP-UHFFFAOYSA-N 0.000 description 1
- IZQZNLBFNMTRMF-UHFFFAOYSA-N acetic acid;phosphoric acid Chemical compound CC(O)=O.OP(O)(O)=O IZQZNLBFNMTRMF-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Description
以下、本発明による炭化珪素半導体素子の好適な実施の形態を、図面を参照しながら詳細に説明する。ここではコンタクト電極の材料として純ニッケルを、バリアメタルの材料として窒化チタンを用いるものとする。
図1には、n型炭化珪素基板1にデバイス構造を形成し、高濃度イオン注入領域の直上にコンタクトホール5を形成した状態を示す。図1に示すように、薬液洗浄やプラズマエッチングなどの方法で清浄化された単結晶n型炭化珪素基板1の上に、n型ドリフト層2、高濃度イオン注入領域3を順次形成し、層間絶縁膜4で密封した後、高濃度イオン注入領域3の直上にコンタクトホール5を開口する。パターン形成やマスク合わせの手法は自明であるため、説明および図示を省略する。
図2には、コンタクトホール5の側壁を含む、コンタクトホール5外の領域に、窒化チタン層6を形成した状態を示す。図2に示すように、コンタクトホール5の側壁を含む、コンタクトホール5よりも外側の領域(層間絶縁膜4の表面を含む)を、バリアメタルとして好適な窒化チタン層6で保護する。コンタクトホール5内の領域は、ドライエッチングなどの手法で開口し、高濃度イオン注入領域3を露出させておく。パターン形成やマスク合わせの手法については、手順1と同様、説明および図示を省略する。バリアメタルとしては、チタンの他に、ジルコニウム、タンタルおよびタングステンの内、いずれか1種類以上を含む窒化物とする。
図3には、表面構造全域にニッケル層7を堆積した状態を示す。図3に示すように、コンタクトホール5と窒化チタン層6の表面を含む表面構造全域に、ニッケル層7を堆積する。ニッケル層7の堆積の手法としては、蒸着やスパッタを用いることができ、特にスパッタ法が膜厚均一性に優れるため好適である。ニッケル層7としては、純ニッケルに限らず、例えば、遊離カーボンの発生を抑える目的で、チタンを15〜30at%程度混合したニッケル合金としても良い。
手順3までの表面構造を形成したn型炭化珪素基板1をアニール炉に導入し、アルゴンや窒素などの不活性ガス雰囲気中で熱アニールを行う。このアニールにより、コンタクトホール5の内部では、ニッケル層7と炭化珪素中に含まれるシリコンとが反応し、ニッケルシリサイド層8が生成される。
次に、熱アニール後のn型炭化珪素基板1を、硝酸、塩酸、硫酸のいずれかを含む薬液に浸漬する。ニッケルの溶解が可能な薬液であれば、上記成分以外には特に制限を設けないが、処理槽の共通化という観点からは、Al−Si合金のパターン抜きに用いられるリン硝酸やリン硝酢酸が好適である。
2 n型ドリフト層
3 高濃度イオン注入領域
4 層間絶縁膜
5 コンタクトホール
6 窒化チタン層
7 ニッケル層
8 ニッケルシリサイド層
9 含ニッケル金属凝集体
Claims (2)
- 単結晶の炭化珪素半導体基板上にコンタクト電極を形成する炭化珪素半導体素子の製造方法において、
前記炭化珪素半導体基板上の層間絶縁膜に開口したコンタクトホールの側壁を含む前記コンタクトホール外の領域に位置する前記層間絶縁膜をバリアメタルで覆う工程と、
前記炭化珪素半導体基板上から前記バリアメタル上にかけてニッケルシリサイドの電極材料である、チタンを15〜30at%混合したニッケル合金で覆う工程と、
前記炭化珪素半導体基板を1000℃以上1455℃未満の温度で熱アニールし、前記コンタクトホールの内部にのみニッケルシリサイド層を形成し、かつ、前記コンタクトホール外の領域に、長径200〜600nm、厚さ50〜100nmの粒状のニッケル金属の凝集体を点在させる工程と、
その後、前記炭化珪素半導体基板をニッケルに対し溶解性を有する薬液に浸透させて、前記ニッケル金属の凝集体を溶解除去する工程と、
前記バリアメタル上を金属電極で覆う工程と、
をこの順で行うことを特徴とする炭化珪素半導体素子の製造方法。 - 前記薬液は、硝酸、塩酸、硫酸のいずれかを含むことを特徴とする、請求項1に記載の炭化珪素半導体素子の製造方法。
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JP2016053117A JP6801200B2 (ja) | 2016-03-16 | 2016-03-16 | 炭化珪素半導体素子の製造方法 |
US15/414,688 US20170271156A1 (en) | 2016-03-16 | 2017-01-25 | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device |
US16/710,668 US11557481B2 (en) | 2016-03-16 | 2019-12-11 | Contact to silicon carbide semiconductor device |
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JP2016053117A JP6801200B2 (ja) | 2016-03-16 | 2016-03-16 | 炭化珪素半導体素子の製造方法 |
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JP2017168673A JP2017168673A (ja) | 2017-09-21 |
JP6801200B2 true JP6801200B2 (ja) | 2020-12-16 |
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KR102452691B1 (ko) * | 2017-11-20 | 2022-10-11 | 현대자동차주식회사 | 전력반도체 소자 제조방법 및 전력반도체 소자 |
JP7225873B2 (ja) * | 2019-02-07 | 2023-02-21 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
JP7294097B2 (ja) | 2019-12-04 | 2023-06-20 | 株式会社デンソー | 半導体装置の製造方法 |
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US5962923A (en) * | 1995-08-07 | 1999-10-05 | Applied Materials, Inc. | Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches |
US5925225A (en) * | 1997-03-27 | 1999-07-20 | Applied Materials, Inc. | Method of producing smooth titanium nitride films having low resistivity |
CN1131548C (zh) * | 1997-04-04 | 2003-12-17 | 松下电器产业株式会社 | 半导体装置 |
JP3888330B2 (ja) | 2003-04-23 | 2007-02-28 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP4699812B2 (ja) * | 2005-06-07 | 2011-06-15 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP5344210B2 (ja) * | 2005-11-25 | 2013-11-20 | 独立行政法人物質・材料研究機構 | カーボンナノチューブの合成方法及び合成装置 |
US7365009B2 (en) * | 2006-01-04 | 2008-04-29 | United Microelectronics Corp. | Structure of metal interconnect and fabrication method thereof |
JP2012094555A (ja) * | 2009-02-18 | 2012-05-17 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2010238738A (ja) * | 2009-03-30 | 2010-10-21 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
JP5694119B2 (ja) * | 2010-11-25 | 2015-04-01 | 三菱電機株式会社 | 炭化珪素半導体装置 |
JP6261155B2 (ja) * | 2012-02-20 | 2018-01-17 | 富士電機株式会社 | SiC半導体デバイスの製造方法 |
JP2013219150A (ja) | 2012-04-06 | 2013-10-24 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体装置のオーミック電極の製造方法 |
JP6192190B2 (ja) | 2014-03-11 | 2017-09-06 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
CN103919479A (zh) * | 2014-04-04 | 2014-07-16 | 广东万事泰集团有限公司 | 设置单感温探头的智能锅具及一种煎烹食物的方法 |
DE112014003614T5 (de) * | 2014-04-18 | 2016-04-28 | Fuji Electric Co., Ltd. | Verfahren zum Herstellen einer Halbleitervorrichtung |
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US20170271156A1 (en) | 2017-09-21 |
US20200118821A1 (en) | 2020-04-16 |
US11557481B2 (en) | 2023-01-17 |
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