GB1399603A - Ion sources - Google Patents

Ion sources

Info

Publication number
GB1399603A
GB1399603A GB4172371A GB4172371A GB1399603A GB 1399603 A GB1399603 A GB 1399603A GB 4172371 A GB4172371 A GB 4172371A GB 4172371 A GB4172371 A GB 4172371A GB 1399603 A GB1399603 A GB 1399603A
Authority
GB
United Kingdom
Prior art keywords
enclosure
plasma
field
coil
steady
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4172371A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boswell R W Christiansen P J N
Boswell R W Christiansen P J Newton G P
Original Assignee
Boswell R W Christiansen P J N
Boswell R W Christiansen P J Newton G P
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boswell R W Christiansen P J N, Boswell R W Christiansen P J Newton G P filed Critical Boswell R W Christiansen P J N
Priority to GB4172371A priority Critical patent/GB1399603A/en
Publication of GB1399603A publication Critical patent/GB1399603A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

1399603 Ion sources R W BOSWELL P J CHRISTIANSEN G P NEWTON and G E G MARTELLI 7 Dec 1972 [7 Sept 1971] 41723/71 Heading H1D A beam of ions is produced by establishing an R.F. magnetic field by means of a coil 13 in an elongated insulating enclosure 10 containing a gas or vapour at a low pressure (of the order of 3 x 10<SP>-2</SP> to 10<SP>-4</SP> mm. Hg.) so as to produce a plasma therein, establishing a steady magnetic field in the enclosure by a coil 20 to constrain the plasma into an axial column, bringing the R.F. field frequency into resonance with a natural frequency of the plsama to increase the ionization in the plasma, and establishing a steady electric field close to the region of the steady magnetic field and to one end of the enclosure by an extraction system 17 so as to draw off and collimate a beam of ions from the plasma. Optimum resonance between the plasma and the R.F. field may be achieved by appropriate selection of the strength of the steady magnetic field, the frequency and power of the R.F. field, the diameter of the enclosure and/or the pressure in the enclosure to select the most convenient of the natural frequencies of the plasma. The enclosure 10 is evacuated through a branch 11 and supplied with gas or vapour through a branch 12. The R.F. coil 13 is supplied by an oscillator 19 through a matching unit 18. A button 23 of a metal whose ions are required is mounted on an adjustable support rod and maintained at a potential negative to that of the plasma. Alternatively a ribbon or needle of the metal may be used. The extraction system 17 comprises two electrodes 26, 27 (Fig. 4) mounted on an end wall 28 of the enclosure 10. Electrode 27 is maintained at a lower potential than electrode 26. In alternative embodiments (Figs. 2 and 3, not shown) the coil 13 is wound so as to produce and R.F. field at right-angles to the steady field and the coil 20 is replaced by a pair of coils spaced along the enclosure 10.
GB4172371A 1971-09-07 1971-09-07 Ion sources Expired GB1399603A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB4172371A GB1399603A (en) 1971-09-07 1971-09-07 Ion sources

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4172371A GB1399603A (en) 1971-09-07 1971-09-07 Ion sources

Publications (1)

Publication Number Publication Date
GB1399603A true GB1399603A (en) 1975-07-02

Family

ID=10421069

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4172371A Expired GB1399603A (en) 1971-09-07 1971-09-07 Ion sources

Country Status (1)

Country Link
GB (1) GB1399603A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162365A (en) * 1984-07-26 1986-01-29 Atomic Energy Authority Uk Ion source
WO1988007259A1 (en) * 1987-03-18 1988-09-22 Hans Oechsner High-frequency ion source
EP0283519A1 (en) * 1986-09-29 1988-09-28 Nippon Telegraph And Telephone Corporation Ion generation apparatus, thin film formation apparatus using the ion generation apparatus, and ion source
GB2235086A (en) * 1989-06-01 1991-02-20 Ion Tech Ltd Ion beam source
US5962923A (en) * 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US6045666A (en) * 1995-08-07 2000-04-04 Applied Materials, Inc. Aluminum hole filling method using ionized metal adhesion layer
US7074714B2 (en) 1997-11-26 2006-07-11 Applied Materials, Inc. Method of depositing a metal seed layer on semiconductor substrates
US7687909B2 (en) 1997-11-26 2010-03-30 Applied Materials, Inc. Metal / metal nitride barrier layer for semiconductor device applications

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162365A (en) * 1984-07-26 1986-01-29 Atomic Energy Authority Uk Ion source
GB2162365B (en) * 1984-07-26 1989-06-01 Atomic Energy Authority Uk Ion source
EP0283519A4 (en) * 1986-09-29 1989-10-12 Nippon Telegraph & Telephone Ion generation apparatus, thin film formation apparatus using the ion generation apparatus, and ion source.
EP0283519A1 (en) * 1986-09-29 1988-09-28 Nippon Telegraph And Telephone Corporation Ion generation apparatus, thin film formation apparatus using the ion generation apparatus, and ion source
US5017835A (en) * 1987-03-18 1991-05-21 Hans Oechsner High-frequency ion source
WO1988007259A1 (en) * 1987-03-18 1988-09-22 Hans Oechsner High-frequency ion source
GB2235086A (en) * 1989-06-01 1991-02-20 Ion Tech Ltd Ion beam source
US5962923A (en) * 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US6045666A (en) * 1995-08-07 2000-04-04 Applied Materials, Inc. Aluminum hole filling method using ionized metal adhesion layer
US6217721B1 (en) 1995-08-07 2001-04-17 Applied Materials, Inc. Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer
US6238533B1 (en) 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US7074714B2 (en) 1997-11-26 2006-07-11 Applied Materials, Inc. Method of depositing a metal seed layer on semiconductor substrates
US7381639B2 (en) 1997-11-26 2008-06-03 Applied Materials, Inc. Method of depositing a metal seed layer on semiconductor substrates
US7687909B2 (en) 1997-11-26 2010-03-30 Applied Materials, Inc. Metal / metal nitride barrier layer for semiconductor device applications
US9390970B2 (en) 1997-11-26 2016-07-12 Applied Materials, Inc. Method for depositing a diffusion barrier layer and a metal conductive layer

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Legal Events

Date Code Title Description
PS Patent sealed