GB2162365A - Ion source - Google Patents
Ion source Download PDFInfo
- Publication number
- GB2162365A GB2162365A GB8518922A GB8518922A GB2162365A GB 2162365 A GB2162365 A GB 2162365A GB 8518922 A GB8518922 A GB 8518922A GB 8518922 A GB8518922 A GB 8518922A GB 2162365 A GB2162365 A GB 2162365A
- Authority
- GB
- United Kingdom
- Prior art keywords
- ions
- chamber
- ion source
- plasma
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
An ion source in which a gaseous material, the source of the ions, is excited to a plasma state by means of a radio frequency electromagnetic field. The wall of the chamber containing the plasma is maintained at a high temperature and there is provided a steady magnetic field thereby to cause the ion source to produce atomic rather than molecular ions. The rf field is generated by coil 5 which is connected to a power source 6. Also connected to the coil 5 is a second power source 7 which is adapted to provide the steady magnetic field 8, in the region of the chamber walls 2. Alternatively the magnetic field may be provided by magnets. <IMAGE>
Description
1 GB 2 162 365A 1
SPECIFICATION
Ion source The present invention relates to ion sources.
Ion sources are known in which a gaseous material, ions of which are to be generated, is excited to a fully ionised, or plasma, state by means of radio-frequency alternating fields.
The desired ions are then extracted from the source by means of an electric field produced by one or more extraction electrodes.
Such sources as are known, however, produce predominantly beams of molecular ions, and for some purposes, for example, the production of insulating regions in semiconductor substrates for use in the production of very large scale integrated circuits, or regions which need to have specific types of electrical conductivity in such circuits, molecular ions are deleterious.
An object of the present invention therefore is to provide a radio frequency plasma ion source which produces predominantly atomic ions.
According to the present invention there is provided an ion source, comprising a chamber which can be evacuated, means for introducing into the chamber in a gaseous state a material ions of which are to be provided by the source, means for applying an alternating electromagnetic field to the gaseous medium whereby it can be excited to a plasma state, means for applying an electric field to extract ions from the plasma, means for maintaining the walls of the chamber at an elevated temperature, and means for applying a solenoidal or radial multipolar magnetic field to a plasma within the chamber.
The energy required to heat the walls of the chamber may be derived from the plasma or applied from an external source.
By allowing the walls of the chamber to reach a temperature in the region of 600'C and applying the magnetic field to the plasma, the electron temperture within it can be raised to a value such that the molecules of the plasma material are dissociated and prevented from recombining. Thus the ion source will produce predominantly atomic ions. Any unwanted molecular ions can be removed by means of a magnetic analyser.
Preferably, the ion source includes an extractor electrode having a plurality of parallel slits therein so as to produce a plurality of parallel individual beams.
The invention will now be described, by way of example, with reference to the accompanying drawings, in which Figure 1 is a schematic representation of one embodiment of the invention, and Figure 2 is a schematic representation of a second embodiment of the invention.
Figure 3 is a diagrammatic representation of an ion beam generator embodying the inven- tion.
Referring to Fig. 1, an ion source comprises a chamber 1 some 700 mm in diameter the wall 2 of which is made of quartz. In the wall 2 are a first port 3 by means of which the chamber 3 can be evacuated, and a second port 4 by means of which a volatile or gaseous material, ions of which are to be provided by the source, can be introduced into the chamber 1. Surrounding the chamber 1 is a coil 5 through which an electric current can be passed, from a radio-frequency power source 6 of a known type, which will not be described further. The frequency and power output of the power source 6 are such that the material introduced into the chamber 1 is fully excited into the plasma state. Also connected to the coil 5 is a second power source 7 which is adapted to provide a steady sole- noidal magnetic field 8 in the region of the major part of the wall 2 of the chamber 1. Two coils 9 and 10, respectively are provided to isolate the power source 7 from the radio frequency current in the coil 5. Situated within the chamber 1 is a quartz plate 11 the function of which is to prevent electrons from impinging on those parts of the wall 2 of the chamber 1 to which the solenoidal magnetic field 8 does not reach. 95 A metal plate 12 defines an exit hole for ions produced by the source, and also acts as an extraction electrode. In use the wall 2 of the chamber 1 becomes heated to a temperature of several hundred degrees centigrade as a result of bombardment by the constituents of the plasma within the chamber 1. The operating temperature of the wall 2 of the chamber 1 is not critical but does have an optimum value which depends on the material of the plasma in the chamber 1. For example, if the gaseous material is oxygen at a pressure of about 0.7 m Torr, then a wall temperature of about 600C is appropriate. If necessary, external heating or cooling means can be provided. In the drawings cooling coils 13 are shown.
In a plasma most of the tendency for the electrons and ions to recombine occurs at its periphery. Also, in these cooler regions neu- tral atoms recombine to form molecules. The hot wall 2 of the chamber 1 and the magnetic field 8 control both the distribution of the electron temperature in the plasma and also the flux of ions to the wall 2 of the chamber
1. The net result is to enhance greatly the number of atomic ions produced by the source compared with the output from a conventional plasma discharge ion source.
Fig. 2 shows a second embodiment of the invention in which the magnetic field 8 is provided by a number of magnets 21 and is multipolar in form. The ion source operates in the same way as the first embodiment and therefore will not be described further. Those components which are common to both em- 2 GB 2 162 365A 2 bodiments have the same reference numerals.
If the source is to be used to produce ions of a material which normally is in a solid or liquid form then the port 4 can be connected to a furnace in which the material can be vapourised.
Referring to Fig. 3 of the drawings, an ion beam generator embodying the present invention consists of a vacuum chamber 30 which has two ports 32 and 33 through which it can be evacuated. One end of the vacuum cham ber 30 is bolted to a base plate 25 which has a central hole 26 in it through which an ion beam 27 can enter the vacuum chamber 1.
Positioned in the path of the ion beam 27 80 is an electrorngnet assembly 28. The electro magnet assembly 28 provides a first magnetic field 29' which is directed out of the plane of the paper on which the figure is drawn, and a second magnetic field 2W' directed in the opposite direction. The electromagnet as sembly 28 has a core 31 which is in the form of a complete loop which is cut to provide two pairs of pole pieces 34 and 35. Appropriately connected pairs of coils 14 and 15, respec- 90 tively, are wound upon the pairs of pole pieces 34 and 35. The pair of pole pieces 35 carries a number of water-cooled plates 16 which are so positioned as to intercept those components of the ion beam 27 which have mass-charge ratios other than that of the singly ionised monatomic species the magnetic analyser is intended to produce. The pair of pole pieces 35 also carry a structure 17 which defines an exit slit 18. The plates 16 and the structure 17 are water-cooled. Mounted on the vacuum chamber 30 opposite the incoming ion beam 27 is a beam dump 19 which is arranged to intercept and absorb the energy of the ion beam 27 in the absence of any magnetic fields being produced by the electromagnet assembly 28.
The ion beam 27 is produced by an ancilliary assembly 20 attached to the vacuum chamber 30. The assembly 20 includes a radio-frequency plasma ion source 21 as de scribed with reference to Figs. 1 and 2.
Associated with the plasma ion source 21 are three grid holders and extraction electrodes 22 which between them define a series of 115 parallel rectangular cross-section beamlets which together make up the ion beam 27.
The longer axes of the beamlets are aligned parallel with the magnetic fields 29' and 29".
In use, the magnetic field 29' diverts the 120 beam 27 to its right as shown, and separates it into its constituent ions having differing mass-charge ratios in the normal way. Ions having considerably different mass-charge ra- tios impinge on, and are absorbed by, the 125 plates 16. Ions having a relatively small spread in mass-charge ratio centred on the desired value are deflected in the opposite direction by the second matgnetic field 291' and are brought to foci at the structure 17.
The slit 18 allows only those ions having the exact mass-charge ratio desired to pass through and emerge as a sharply-diverging beam 23 of rectangular cross-section of the desired ion species. All the other ions are intercepted by the structure 17, which also is water-cooled.
The emerging ion beam 23 may show some residual structure arising from the beamlets. If this is so, and its effects are judged to be undesirable, then this can be reduced, or removed by a number of methods, for example:
a) by modulating the energy of the input beam 27, b) by modulating the magnetic fields 29' and 2W or c) by electrostatically sweeping the ion beams during their passage through the field- free region between the magnetic fields 29' and 2W' or d) by allowing a controlled measure of divergence in at least one of the beamlets which make up the ion beam 27.
Claims (7)
1. An ion source, comprising a chamber which can be evacuated, means for introducing into the chamber in a gaseous state a material ions of which are to be provided by the source, means for applying an alternating electromagnetic field to the gaseous medium whereby it can be excited to a plasma state, means for applying an electric field to extract ions from the plasma, wherein there is provided means for maintaining the walls of the chamber at an elevated temperature, and means for applying a solenoidal or radial multipolar magnetic field to a plasma within the chamber.
2. An ion source according to claim 1 wherein the means for applying an electric field to extract ions from the chamber includes an electrode having a plurality of parallel slits formed in it so as to provide a plurality of elongated parallel beamlets.
3. An ion source according to claim 1 or claims 2 wherein the means for maintaining the walls of the chamber at a high temperature is adapted to maintain the wall of the chamber at a temperature of approximately five hundred degrees celsius.
4. An ion source according to any of claims 1 to 3 in association with a magnetic analyser adapted to select only ions having a predetermined mass to charge ratio.
5. An ion source and magnetic analyser according to claim 4 wherein the magnetic analyser includes means for providing two anti-parallel magnetic fields and the said beamlets of ions are arranged to pass orthogonally through them sequentially, the first magnetic field serving to select ions of the given mass to charge ratio, and the second mag- netic field serving to bring the selected ions to 3 GB 2 162 365A 3 a focus to form a single divergent beam of ions.
6. An ion source substantially as hereinbefore described with reference to Figs. 1 and 2 5 of the accompanying drawings.
7. An ion source in association with a magnetic analyser substantially as hereinbefore described with reference to Fig. 3 of the accompanying drawings.
Printed in the United Kingdom for Her Majesty's Stationery Office, Dd 8818935, 1986, 4235. Published at The Patent Office, 25 Southampton Buildings, London, WC2A l AY, from which copies may be obtained.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB848419039A GB8419039D0 (en) | 1984-07-26 | 1984-07-26 | Ion source |
GB848419070A GB8419070D0 (en) | 1984-07-26 | 1984-07-26 | Magnetic analyser |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8518922D0 GB8518922D0 (en) | 1985-09-04 |
GB2162365A true GB2162365A (en) | 1986-01-29 |
GB2162365B GB2162365B (en) | 1989-06-01 |
Family
ID=26288028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8518922A Expired GB2162365B (en) | 1984-07-26 | 1985-07-26 | Ion source |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0169744A3 (en) |
GB (1) | GB2162365B (en) |
Cited By (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4908261A (en) * | 1986-03-31 | 1990-03-13 | Kabushiki Kaisha Toshiba | Non-ferrous metal mechanical part |
US5198718A (en) * | 1989-03-06 | 1993-03-30 | Nordiko Limited | Filamentless ion source for thin film processing and surface modification |
US5208512A (en) * | 1990-10-16 | 1993-05-04 | International Business Machines Corporation | Scanned electron cyclotron resonance plasma source |
US5961793A (en) * | 1996-10-31 | 1999-10-05 | Applied Materials, Inc. | Method of reducing generation of particulate matter in a sputtering chamber |
US6042700A (en) * | 1997-09-15 | 2000-03-28 | Applied Materials, Inc. | Adjustment of deposition uniformity in an inductively coupled plasma source |
US6077402A (en) * | 1997-05-16 | 2000-06-20 | Applied Materials, Inc. | Central coil design for ionized metal plasma deposition |
US6103070A (en) * | 1997-05-14 | 2000-08-15 | Applied Materials, Inc. | Powered shield source for high density plasma |
US6132566A (en) * | 1998-07-30 | 2000-10-17 | Applied Materials, Inc. | Apparatus and method for sputtering ionized material in a plasma |
US6146508A (en) * | 1998-04-22 | 2000-11-14 | Applied Materials, Inc. | Sputtering method and apparatus with small diameter RF coil |
US6190513B1 (en) | 1997-05-14 | 2001-02-20 | Applied Materials, Inc. | Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition |
US6210539B1 (en) | 1997-05-14 | 2001-04-03 | Applied Materials, Inc. | Method and apparatus for producing a uniform density plasma above a substrate |
US6217718B1 (en) | 1999-02-17 | 2001-04-17 | Applied Materials, Inc. | Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma |
US6228229B1 (en) * | 1995-11-15 | 2001-05-08 | Applied Materials, Inc. | Method and apparatus for generating a plasma |
US6231725B1 (en) | 1998-08-04 | 2001-05-15 | Applied Materials, Inc. | Apparatus for sputtering material onto a workpiece with the aid of a plasma |
US6235169B1 (en) | 1997-08-07 | 2001-05-22 | Applied Materials, Inc. | Modulated power for ionized metal plasma deposition |
US6238528B1 (en) | 1998-10-13 | 2001-05-29 | Applied Materials, Inc. | Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source |
US6254738B1 (en) | 1998-03-31 | 2001-07-03 | Applied Materials, Inc. | Use of variable impedance having rotating core to control coil sputter distribution |
US6254746B1 (en) | 1996-05-09 | 2001-07-03 | Applied Materials, Inc. | Recessed coil for generating a plasma |
US6254737B1 (en) | 1996-10-08 | 2001-07-03 | Applied Materials, Inc. | Active shield for generating a plasma for sputtering |
US6280579B1 (en) | 1997-12-19 | 2001-08-28 | Applied Materials, Inc. | Target misalignment detector |
US6345588B1 (en) | 1997-08-07 | 2002-02-12 | Applied Materials, Inc. | Use of variable RF generator to control coil voltage distribution |
US6359250B1 (en) | 1998-07-13 | 2002-03-19 | Applied Komatsu Technology, Inc. | RF matching network with distributed outputs |
US6361661B2 (en) | 1997-05-16 | 2002-03-26 | Applies Materials, Inc. | Hybrid coil design for ionized deposition |
US6368469B1 (en) | 1996-05-09 | 2002-04-09 | Applied Materials, Inc. | Coils for generating a plasma and for sputtering |
US6375810B2 (en) | 1997-08-07 | 2002-04-23 | Applied Materials, Inc. | Plasma vapor deposition with coil sputtering |
DE10058326C1 (en) * | 2000-11-24 | 2002-06-13 | Astrium Gmbh | Inductively coupled high-frequency electron source with reduced power requirements due to electrostatic confinement of electrons |
US6451179B1 (en) | 1997-01-30 | 2002-09-17 | Applied Materials, Inc. | Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma |
US6475356B1 (en) | 1996-11-21 | 2002-11-05 | Applied Materials, Inc. | Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma |
US6514390B1 (en) | 1996-10-17 | 2003-02-04 | Applied Materials, Inc. | Method to eliminate coil sputtering in an ICP source |
US6565717B1 (en) | 1997-09-15 | 2003-05-20 | Applied Materials, Inc. | Apparatus for sputtering ionized material in a medium to high density plasma |
US6579426B1 (en) | 1997-05-16 | 2003-06-17 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
US6599399B2 (en) | 1997-03-07 | 2003-07-29 | Applied Materials, Inc. | Sputtering method to generate ionized metal plasma using electron beams and magnetic field |
US6652717B1 (en) | 1997-05-16 | 2003-11-25 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
US8398832B2 (en) | 1996-05-09 | 2013-03-19 | Applied Materials Inc. | Coils for generating a plasma and for sputtering |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62296332A (en) * | 1986-06-16 | 1987-12-23 | Hitachi Ltd | Ion source |
DE3632340C2 (en) * | 1986-09-24 | 1998-01-15 | Leybold Ag | Inductively excited ion source |
GB2235086A (en) * | 1989-06-01 | 1991-02-20 | Ion Tech Ltd | Ion beam source |
US6023038A (en) | 1997-09-16 | 2000-02-08 | Applied Materials, Inc. | Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system |
DE102008022181B4 (en) * | 2008-05-05 | 2019-05-02 | Arianegroup Gmbh | Ion engine |
Citations (3)
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US3302026A (en) * | 1963-07-25 | 1967-01-31 | Exxon Production Research Co | Ion source neutron generator having magnetically stabilized plasma |
GB1399603A (en) * | 1971-09-07 | 1975-07-02 | Boswell R W Christiansen P J N | Ion sources |
GB2069230A (en) * | 1980-02-13 | 1981-08-19 | Commissariat Energie Atomique | Process and apparatus for producing highly charged large ions and an application utilizing this process |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4017403A (en) * | 1974-07-31 | 1977-04-12 | United Kingdom Atomic Energy Authority | Ion beam separators |
US4447773A (en) * | 1981-06-22 | 1984-05-08 | California Institute Of Technology | Ion beam accelerator system |
JPS6043620B2 (en) * | 1982-11-25 | 1985-09-28 | 日新ハイボルテージ株式会社 | microwave ion source |
-
1985
- 1985-07-26 GB GB8518922A patent/GB2162365B/en not_active Expired
- 1985-07-26 EP EP85305339A patent/EP0169744A3/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3302026A (en) * | 1963-07-25 | 1967-01-31 | Exxon Production Research Co | Ion source neutron generator having magnetically stabilized plasma |
GB1399603A (en) * | 1971-09-07 | 1975-07-02 | Boswell R W Christiansen P J N | Ion sources |
GB2069230A (en) * | 1980-02-13 | 1981-08-19 | Commissariat Energie Atomique | Process and apparatus for producing highly charged large ions and an application utilizing this process |
Cited By (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4908261A (en) * | 1986-03-31 | 1990-03-13 | Kabushiki Kaisha Toshiba | Non-ferrous metal mechanical part |
US5198718A (en) * | 1989-03-06 | 1993-03-30 | Nordiko Limited | Filamentless ion source for thin film processing and surface modification |
US5208512A (en) * | 1990-10-16 | 1993-05-04 | International Business Machines Corporation | Scanned electron cyclotron resonance plasma source |
US6264812B1 (en) | 1995-11-15 | 2001-07-24 | Applied Materials, Inc. | Method and apparatus for generating a plasma |
US6297595B1 (en) | 1995-11-15 | 2001-10-02 | Applied Materials, Inc. | Method and apparatus for generating a plasma |
US6228229B1 (en) * | 1995-11-15 | 2001-05-08 | Applied Materials, Inc. | Method and apparatus for generating a plasma |
US8398832B2 (en) | 1996-05-09 | 2013-03-19 | Applied Materials Inc. | Coils for generating a plasma and for sputtering |
US6368469B1 (en) | 1996-05-09 | 2002-04-09 | Applied Materials, Inc. | Coils for generating a plasma and for sputtering |
US6783639B2 (en) | 1996-05-09 | 2004-08-31 | Applied Materials | Coils for generating a plasma and for sputtering |
US6254746B1 (en) | 1996-05-09 | 2001-07-03 | Applied Materials, Inc. | Recessed coil for generating a plasma |
US6254737B1 (en) | 1996-10-08 | 2001-07-03 | Applied Materials, Inc. | Active shield for generating a plasma for sputtering |
US6514390B1 (en) | 1996-10-17 | 2003-02-04 | Applied Materials, Inc. | Method to eliminate coil sputtering in an ICP source |
US5961793A (en) * | 1996-10-31 | 1999-10-05 | Applied Materials, Inc. | Method of reducing generation of particulate matter in a sputtering chamber |
US6475356B1 (en) | 1996-11-21 | 2002-11-05 | Applied Materials, Inc. | Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma |
US6451179B1 (en) | 1997-01-30 | 2002-09-17 | Applied Materials, Inc. | Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma |
US6599399B2 (en) | 1997-03-07 | 2003-07-29 | Applied Materials, Inc. | Sputtering method to generate ionized metal plasma using electron beams and magnetic field |
US6190513B1 (en) | 1997-05-14 | 2001-02-20 | Applied Materials, Inc. | Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition |
US6103070A (en) * | 1997-05-14 | 2000-08-15 | Applied Materials, Inc. | Powered shield source for high density plasma |
US6210539B1 (en) | 1997-05-14 | 2001-04-03 | Applied Materials, Inc. | Method and apparatus for producing a uniform density plasma above a substrate |
US6077402A (en) * | 1997-05-16 | 2000-06-20 | Applied Materials, Inc. | Central coil design for ionized metal plasma deposition |
US6652717B1 (en) | 1997-05-16 | 2003-11-25 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
US6579426B1 (en) | 1997-05-16 | 2003-06-17 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
US6361661B2 (en) | 1997-05-16 | 2002-03-26 | Applies Materials, Inc. | Hybrid coil design for ionized deposition |
US6375810B2 (en) | 1997-08-07 | 2002-04-23 | Applied Materials, Inc. | Plasma vapor deposition with coil sputtering |
US6235169B1 (en) | 1997-08-07 | 2001-05-22 | Applied Materials, Inc. | Modulated power for ionized metal plasma deposition |
US6345588B1 (en) | 1997-08-07 | 2002-02-12 | Applied Materials, Inc. | Use of variable RF generator to control coil voltage distribution |
US6565717B1 (en) | 1997-09-15 | 2003-05-20 | Applied Materials, Inc. | Apparatus for sputtering ionized material in a medium to high density plasma |
US6042700A (en) * | 1997-09-15 | 2000-03-28 | Applied Materials, Inc. | Adjustment of deposition uniformity in an inductively coupled plasma source |
US6280579B1 (en) | 1997-12-19 | 2001-08-28 | Applied Materials, Inc. | Target misalignment detector |
US6254738B1 (en) | 1998-03-31 | 2001-07-03 | Applied Materials, Inc. | Use of variable impedance having rotating core to control coil sputter distribution |
US6146508A (en) * | 1998-04-22 | 2000-11-14 | Applied Materials, Inc. | Sputtering method and apparatus with small diameter RF coil |
US6552297B2 (en) | 1998-07-13 | 2003-04-22 | Applied Komatsu Technology, Inc. | RF matching network with distributed outputs |
US6359250B1 (en) | 1998-07-13 | 2002-03-19 | Applied Komatsu Technology, Inc. | RF matching network with distributed outputs |
US6132566A (en) * | 1998-07-30 | 2000-10-17 | Applied Materials, Inc. | Apparatus and method for sputtering ionized material in a plasma |
US6231725B1 (en) | 1998-08-04 | 2001-05-15 | Applied Materials, Inc. | Apparatus for sputtering material onto a workpiece with the aid of a plasma |
US6238528B1 (en) | 1998-10-13 | 2001-05-29 | Applied Materials, Inc. | Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source |
US6217718B1 (en) | 1999-02-17 | 2001-04-17 | Applied Materials, Inc. | Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma |
DE10058326C1 (en) * | 2000-11-24 | 2002-06-13 | Astrium Gmbh | Inductively coupled high-frequency electron source with reduced power requirements due to electrostatic confinement of electrons |
US6661165B2 (en) | 2000-11-24 | 2003-12-09 | Astrium Gmbh | Inductively coupled high-frequency electron source with a reduced power requirement as a result of an electrostatic inclusion of electrons |
Also Published As
Publication number | Publication date |
---|---|
GB2162365B (en) | 1989-06-01 |
EP0169744A3 (en) | 1987-06-10 |
GB8518922D0 (en) | 1985-09-04 |
EP0169744A2 (en) | 1986-01-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |