GB2162365A - Ion source - Google Patents

Ion source Download PDF

Info

Publication number
GB2162365A
GB2162365A GB8518922A GB8518922A GB2162365A GB 2162365 A GB2162365 A GB 2162365A GB 8518922 A GB8518922 A GB 8518922A GB 8518922 A GB8518922 A GB 8518922A GB 2162365 A GB2162365 A GB 2162365A
Authority
GB
United Kingdom
Prior art keywords
ions
chamber
ion source
plasma
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB8518922A
Other versions
GB2162365B (en
GB8518922D0 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Atomic Energy Authority
Original Assignee
UK Atomic Energy Authority
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB848419039A external-priority patent/GB8419039D0/en
Priority claimed from GB848419070A external-priority patent/GB8419070D0/en
Application filed by UK Atomic Energy Authority filed Critical UK Atomic Energy Authority
Publication of GB8518922D0 publication Critical patent/GB8518922D0/en
Publication of GB2162365A publication Critical patent/GB2162365A/en
Application granted granted Critical
Publication of GB2162365B publication Critical patent/GB2162365B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/16Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

An ion source in which a gaseous material, the source of the ions, is excited to a plasma state by means of a radio frequency electromagnetic field. The wall of the chamber containing the plasma is maintained at a high temperature and there is provided a steady magnetic field thereby to cause the ion source to produce atomic rather than molecular ions. The rf field is generated by coil 5 which is connected to a power source 6. Also connected to the coil 5 is a second power source 7 which is adapted to provide the steady magnetic field 8, in the region of the chamber walls 2. Alternatively the magnetic field may be provided by magnets. <IMAGE>

Description

1 GB 2 162 365A 1
SPECIFICATION
Ion source The present invention relates to ion sources.
Ion sources are known in which a gaseous material, ions of which are to be generated, is excited to a fully ionised, or plasma, state by means of radio-frequency alternating fields.
The desired ions are then extracted from the source by means of an electric field produced by one or more extraction electrodes.
Such sources as are known, however, produce predominantly beams of molecular ions, and for some purposes, for example, the production of insulating regions in semiconductor substrates for use in the production of very large scale integrated circuits, or regions which need to have specific types of electrical conductivity in such circuits, molecular ions are deleterious.
An object of the present invention therefore is to provide a radio frequency plasma ion source which produces predominantly atomic ions.
According to the present invention there is provided an ion source, comprising a chamber which can be evacuated, means for introducing into the chamber in a gaseous state a material ions of which are to be provided by the source, means for applying an alternating electromagnetic field to the gaseous medium whereby it can be excited to a plasma state, means for applying an electric field to extract ions from the plasma, means for maintaining the walls of the chamber at an elevated temperature, and means for applying a solenoidal or radial multipolar magnetic field to a plasma within the chamber.
The energy required to heat the walls of the chamber may be derived from the plasma or applied from an external source.
By allowing the walls of the chamber to reach a temperature in the region of 600'C and applying the magnetic field to the plasma, the electron temperture within it can be raised to a value such that the molecules of the plasma material are dissociated and prevented from recombining. Thus the ion source will produce predominantly atomic ions. Any unwanted molecular ions can be removed by means of a magnetic analyser.
Preferably, the ion source includes an extractor electrode having a plurality of parallel slits therein so as to produce a plurality of parallel individual beams.
The invention will now be described, by way of example, with reference to the accompanying drawings, in which Figure 1 is a schematic representation of one embodiment of the invention, and Figure 2 is a schematic representation of a second embodiment of the invention.
Figure 3 is a diagrammatic representation of an ion beam generator embodying the inven- tion.
Referring to Fig. 1, an ion source comprises a chamber 1 some 700 mm in diameter the wall 2 of which is made of quartz. In the wall 2 are a first port 3 by means of which the chamber 3 can be evacuated, and a second port 4 by means of which a volatile or gaseous material, ions of which are to be provided by the source, can be introduced into the chamber 1. Surrounding the chamber 1 is a coil 5 through which an electric current can be passed, from a radio-frequency power source 6 of a known type, which will not be described further. The frequency and power output of the power source 6 are such that the material introduced into the chamber 1 is fully excited into the plasma state. Also connected to the coil 5 is a second power source 7 which is adapted to provide a steady sole- noidal magnetic field 8 in the region of the major part of the wall 2 of the chamber 1. Two coils 9 and 10, respectively are provided to isolate the power source 7 from the radio frequency current in the coil 5. Situated within the chamber 1 is a quartz plate 11 the function of which is to prevent electrons from impinging on those parts of the wall 2 of the chamber 1 to which the solenoidal magnetic field 8 does not reach. 95 A metal plate 12 defines an exit hole for ions produced by the source, and also acts as an extraction electrode. In use the wall 2 of the chamber 1 becomes heated to a temperature of several hundred degrees centigrade as a result of bombardment by the constituents of the plasma within the chamber 1. The operating temperature of the wall 2 of the chamber 1 is not critical but does have an optimum value which depends on the material of the plasma in the chamber 1. For example, if the gaseous material is oxygen at a pressure of about 0.7 m Torr, then a wall temperature of about 600C is appropriate. If necessary, external heating or cooling means can be provided. In the drawings cooling coils 13 are shown.
In a plasma most of the tendency for the electrons and ions to recombine occurs at its periphery. Also, in these cooler regions neu- tral atoms recombine to form molecules. The hot wall 2 of the chamber 1 and the magnetic field 8 control both the distribution of the electron temperature in the plasma and also the flux of ions to the wall 2 of the chamber
1. The net result is to enhance greatly the number of atomic ions produced by the source compared with the output from a conventional plasma discharge ion source.
Fig. 2 shows a second embodiment of the invention in which the magnetic field 8 is provided by a number of magnets 21 and is multipolar in form. The ion source operates in the same way as the first embodiment and therefore will not be described further. Those components which are common to both em- 2 GB 2 162 365A 2 bodiments have the same reference numerals.
If the source is to be used to produce ions of a material which normally is in a solid or liquid form then the port 4 can be connected to a furnace in which the material can be vapourised.
Referring to Fig. 3 of the drawings, an ion beam generator embodying the present invention consists of a vacuum chamber 30 which has two ports 32 and 33 through which it can be evacuated. One end of the vacuum cham ber 30 is bolted to a base plate 25 which has a central hole 26 in it through which an ion beam 27 can enter the vacuum chamber 1.
Positioned in the path of the ion beam 27 80 is an electrorngnet assembly 28. The electro magnet assembly 28 provides a first magnetic field 29' which is directed out of the plane of the paper on which the figure is drawn, and a second magnetic field 2W' directed in the opposite direction. The electromagnet as sembly 28 has a core 31 which is in the form of a complete loop which is cut to provide two pairs of pole pieces 34 and 35. Appropriately connected pairs of coils 14 and 15, respec- 90 tively, are wound upon the pairs of pole pieces 34 and 35. The pair of pole pieces 35 carries a number of water-cooled plates 16 which are so positioned as to intercept those components of the ion beam 27 which have mass-charge ratios other than that of the singly ionised monatomic species the magnetic analyser is intended to produce. The pair of pole pieces 35 also carry a structure 17 which defines an exit slit 18. The plates 16 and the structure 17 are water-cooled. Mounted on the vacuum chamber 30 opposite the incoming ion beam 27 is a beam dump 19 which is arranged to intercept and absorb the energy of the ion beam 27 in the absence of any magnetic fields being produced by the electromagnet assembly 28.
The ion beam 27 is produced by an ancilliary assembly 20 attached to the vacuum chamber 30. The assembly 20 includes a radio-frequency plasma ion source 21 as de scribed with reference to Figs. 1 and 2.
Associated with the plasma ion source 21 are three grid holders and extraction electrodes 22 which between them define a series of 115 parallel rectangular cross-section beamlets which together make up the ion beam 27.
The longer axes of the beamlets are aligned parallel with the magnetic fields 29' and 29".
In use, the magnetic field 29' diverts the 120 beam 27 to its right as shown, and separates it into its constituent ions having differing mass-charge ratios in the normal way. Ions having considerably different mass-charge ra- tios impinge on, and are absorbed by, the 125 plates 16. Ions having a relatively small spread in mass-charge ratio centred on the desired value are deflected in the opposite direction by the second matgnetic field 291' and are brought to foci at the structure 17.
The slit 18 allows only those ions having the exact mass-charge ratio desired to pass through and emerge as a sharply-diverging beam 23 of rectangular cross-section of the desired ion species. All the other ions are intercepted by the structure 17, which also is water-cooled.
The emerging ion beam 23 may show some residual structure arising from the beamlets. If this is so, and its effects are judged to be undesirable, then this can be reduced, or removed by a number of methods, for example:
a) by modulating the energy of the input beam 27, b) by modulating the magnetic fields 29' and 2W or c) by electrostatically sweeping the ion beams during their passage through the field- free region between the magnetic fields 29' and 2W' or d) by allowing a controlled measure of divergence in at least one of the beamlets which make up the ion beam 27.

Claims (7)

1. An ion source, comprising a chamber which can be evacuated, means for introducing into the chamber in a gaseous state a material ions of which are to be provided by the source, means for applying an alternating electromagnetic field to the gaseous medium whereby it can be excited to a plasma state, means for applying an electric field to extract ions from the plasma, wherein there is provided means for maintaining the walls of the chamber at an elevated temperature, and means for applying a solenoidal or radial multipolar magnetic field to a plasma within the chamber.
2. An ion source according to claim 1 wherein the means for applying an electric field to extract ions from the chamber includes an electrode having a plurality of parallel slits formed in it so as to provide a plurality of elongated parallel beamlets.
3. An ion source according to claim 1 or claims 2 wherein the means for maintaining the walls of the chamber at a high temperature is adapted to maintain the wall of the chamber at a temperature of approximately five hundred degrees celsius.
4. An ion source according to any of claims 1 to 3 in association with a magnetic analyser adapted to select only ions having a predetermined mass to charge ratio.
5. An ion source and magnetic analyser according to claim 4 wherein the magnetic analyser includes means for providing two anti-parallel magnetic fields and the said beamlets of ions are arranged to pass orthogonally through them sequentially, the first magnetic field serving to select ions of the given mass to charge ratio, and the second mag- netic field serving to bring the selected ions to 3 GB 2 162 365A 3 a focus to form a single divergent beam of ions.
6. An ion source substantially as hereinbefore described with reference to Figs. 1 and 2 5 of the accompanying drawings.
7. An ion source in association with a magnetic analyser substantially as hereinbefore described with reference to Fig. 3 of the accompanying drawings.
Printed in the United Kingdom for Her Majesty's Stationery Office, Dd 8818935, 1986, 4235. Published at The Patent Office, 25 Southampton Buildings, London, WC2A l AY, from which copies may be obtained.
GB8518922A 1984-07-26 1985-07-26 Ion source Expired GB2162365B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB848419039A GB8419039D0 (en) 1984-07-26 1984-07-26 Ion source
GB848419070A GB8419070D0 (en) 1984-07-26 1984-07-26 Magnetic analyser

Publications (3)

Publication Number Publication Date
GB8518922D0 GB8518922D0 (en) 1985-09-04
GB2162365A true GB2162365A (en) 1986-01-29
GB2162365B GB2162365B (en) 1989-06-01

Family

ID=26288028

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8518922A Expired GB2162365B (en) 1984-07-26 1985-07-26 Ion source

Country Status (2)

Country Link
EP (1) EP0169744A3 (en)
GB (1) GB2162365B (en)

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4908261A (en) * 1986-03-31 1990-03-13 Kabushiki Kaisha Toshiba Non-ferrous metal mechanical part
US5198718A (en) * 1989-03-06 1993-03-30 Nordiko Limited Filamentless ion source for thin film processing and surface modification
US5208512A (en) * 1990-10-16 1993-05-04 International Business Machines Corporation Scanned electron cyclotron resonance plasma source
US5961793A (en) * 1996-10-31 1999-10-05 Applied Materials, Inc. Method of reducing generation of particulate matter in a sputtering chamber
US6042700A (en) * 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
US6077402A (en) * 1997-05-16 2000-06-20 Applied Materials, Inc. Central coil design for ionized metal plasma deposition
US6103070A (en) * 1997-05-14 2000-08-15 Applied Materials, Inc. Powered shield source for high density plasma
US6132566A (en) * 1998-07-30 2000-10-17 Applied Materials, Inc. Apparatus and method for sputtering ionized material in a plasma
US6146508A (en) * 1998-04-22 2000-11-14 Applied Materials, Inc. Sputtering method and apparatus with small diameter RF coil
US6190513B1 (en) 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
US6210539B1 (en) 1997-05-14 2001-04-03 Applied Materials, Inc. Method and apparatus for producing a uniform density plasma above a substrate
US6217718B1 (en) 1999-02-17 2001-04-17 Applied Materials, Inc. Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
US6228229B1 (en) * 1995-11-15 2001-05-08 Applied Materials, Inc. Method and apparatus for generating a plasma
US6231725B1 (en) 1998-08-04 2001-05-15 Applied Materials, Inc. Apparatus for sputtering material onto a workpiece with the aid of a plasma
US6235169B1 (en) 1997-08-07 2001-05-22 Applied Materials, Inc. Modulated power for ionized metal plasma deposition
US6238528B1 (en) 1998-10-13 2001-05-29 Applied Materials, Inc. Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
US6254738B1 (en) 1998-03-31 2001-07-03 Applied Materials, Inc. Use of variable impedance having rotating core to control coil sputter distribution
US6254746B1 (en) 1996-05-09 2001-07-03 Applied Materials, Inc. Recessed coil for generating a plasma
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
US6280579B1 (en) 1997-12-19 2001-08-28 Applied Materials, Inc. Target misalignment detector
US6345588B1 (en) 1997-08-07 2002-02-12 Applied Materials, Inc. Use of variable RF generator to control coil voltage distribution
US6359250B1 (en) 1998-07-13 2002-03-19 Applied Komatsu Technology, Inc. RF matching network with distributed outputs
US6361661B2 (en) 1997-05-16 2002-03-26 Applies Materials, Inc. Hybrid coil design for ionized deposition
US6368469B1 (en) 1996-05-09 2002-04-09 Applied Materials, Inc. Coils for generating a plasma and for sputtering
US6375810B2 (en) 1997-08-07 2002-04-23 Applied Materials, Inc. Plasma vapor deposition with coil sputtering
DE10058326C1 (en) * 2000-11-24 2002-06-13 Astrium Gmbh Inductively coupled high-frequency electron source with reduced power requirements due to electrostatic confinement of electrons
US6451179B1 (en) 1997-01-30 2002-09-17 Applied Materials, Inc. Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6475356B1 (en) 1996-11-21 2002-11-05 Applied Materials, Inc. Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6514390B1 (en) 1996-10-17 2003-02-04 Applied Materials, Inc. Method to eliminate coil sputtering in an ICP source
US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6579426B1 (en) 1997-05-16 2003-06-17 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6599399B2 (en) 1997-03-07 2003-07-29 Applied Materials, Inc. Sputtering method to generate ionized metal plasma using electron beams and magnetic field
US6652717B1 (en) 1997-05-16 2003-11-25 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US8398832B2 (en) 1996-05-09 2013-03-19 Applied Materials Inc. Coils for generating a plasma and for sputtering

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62296332A (en) * 1986-06-16 1987-12-23 Hitachi Ltd Ion source
DE3632340C2 (en) * 1986-09-24 1998-01-15 Leybold Ag Inductively excited ion source
GB2235086A (en) * 1989-06-01 1991-02-20 Ion Tech Ltd Ion beam source
US6023038A (en) 1997-09-16 2000-02-08 Applied Materials, Inc. Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
DE102008022181B4 (en) * 2008-05-05 2019-05-02 Arianegroup Gmbh Ion engine

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3302026A (en) * 1963-07-25 1967-01-31 Exxon Production Research Co Ion source neutron generator having magnetically stabilized plasma
GB1399603A (en) * 1971-09-07 1975-07-02 Boswell R W Christiansen P J N Ion sources
GB2069230A (en) * 1980-02-13 1981-08-19 Commissariat Energie Atomique Process and apparatus for producing highly charged large ions and an application utilizing this process

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017403A (en) * 1974-07-31 1977-04-12 United Kingdom Atomic Energy Authority Ion beam separators
US4447773A (en) * 1981-06-22 1984-05-08 California Institute Of Technology Ion beam accelerator system
JPS6043620B2 (en) * 1982-11-25 1985-09-28 日新ハイボルテージ株式会社 microwave ion source

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3302026A (en) * 1963-07-25 1967-01-31 Exxon Production Research Co Ion source neutron generator having magnetically stabilized plasma
GB1399603A (en) * 1971-09-07 1975-07-02 Boswell R W Christiansen P J N Ion sources
GB2069230A (en) * 1980-02-13 1981-08-19 Commissariat Energie Atomique Process and apparatus for producing highly charged large ions and an application utilizing this process

Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4908261A (en) * 1986-03-31 1990-03-13 Kabushiki Kaisha Toshiba Non-ferrous metal mechanical part
US5198718A (en) * 1989-03-06 1993-03-30 Nordiko Limited Filamentless ion source for thin film processing and surface modification
US5208512A (en) * 1990-10-16 1993-05-04 International Business Machines Corporation Scanned electron cyclotron resonance plasma source
US6264812B1 (en) 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US6297595B1 (en) 1995-11-15 2001-10-02 Applied Materials, Inc. Method and apparatus for generating a plasma
US6228229B1 (en) * 1995-11-15 2001-05-08 Applied Materials, Inc. Method and apparatus for generating a plasma
US8398832B2 (en) 1996-05-09 2013-03-19 Applied Materials Inc. Coils for generating a plasma and for sputtering
US6368469B1 (en) 1996-05-09 2002-04-09 Applied Materials, Inc. Coils for generating a plasma and for sputtering
US6783639B2 (en) 1996-05-09 2004-08-31 Applied Materials Coils for generating a plasma and for sputtering
US6254746B1 (en) 1996-05-09 2001-07-03 Applied Materials, Inc. Recessed coil for generating a plasma
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
US6514390B1 (en) 1996-10-17 2003-02-04 Applied Materials, Inc. Method to eliminate coil sputtering in an ICP source
US5961793A (en) * 1996-10-31 1999-10-05 Applied Materials, Inc. Method of reducing generation of particulate matter in a sputtering chamber
US6475356B1 (en) 1996-11-21 2002-11-05 Applied Materials, Inc. Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6451179B1 (en) 1997-01-30 2002-09-17 Applied Materials, Inc. Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6599399B2 (en) 1997-03-07 2003-07-29 Applied Materials, Inc. Sputtering method to generate ionized metal plasma using electron beams and magnetic field
US6190513B1 (en) 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
US6103070A (en) * 1997-05-14 2000-08-15 Applied Materials, Inc. Powered shield source for high density plasma
US6210539B1 (en) 1997-05-14 2001-04-03 Applied Materials, Inc. Method and apparatus for producing a uniform density plasma above a substrate
US6077402A (en) * 1997-05-16 2000-06-20 Applied Materials, Inc. Central coil design for ionized metal plasma deposition
US6652717B1 (en) 1997-05-16 2003-11-25 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6579426B1 (en) 1997-05-16 2003-06-17 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6361661B2 (en) 1997-05-16 2002-03-26 Applies Materials, Inc. Hybrid coil design for ionized deposition
US6375810B2 (en) 1997-08-07 2002-04-23 Applied Materials, Inc. Plasma vapor deposition with coil sputtering
US6235169B1 (en) 1997-08-07 2001-05-22 Applied Materials, Inc. Modulated power for ionized metal plasma deposition
US6345588B1 (en) 1997-08-07 2002-02-12 Applied Materials, Inc. Use of variable RF generator to control coil voltage distribution
US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6042700A (en) * 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
US6280579B1 (en) 1997-12-19 2001-08-28 Applied Materials, Inc. Target misalignment detector
US6254738B1 (en) 1998-03-31 2001-07-03 Applied Materials, Inc. Use of variable impedance having rotating core to control coil sputter distribution
US6146508A (en) * 1998-04-22 2000-11-14 Applied Materials, Inc. Sputtering method and apparatus with small diameter RF coil
US6552297B2 (en) 1998-07-13 2003-04-22 Applied Komatsu Technology, Inc. RF matching network with distributed outputs
US6359250B1 (en) 1998-07-13 2002-03-19 Applied Komatsu Technology, Inc. RF matching network with distributed outputs
US6132566A (en) * 1998-07-30 2000-10-17 Applied Materials, Inc. Apparatus and method for sputtering ionized material in a plasma
US6231725B1 (en) 1998-08-04 2001-05-15 Applied Materials, Inc. Apparatus for sputtering material onto a workpiece with the aid of a plasma
US6238528B1 (en) 1998-10-13 2001-05-29 Applied Materials, Inc. Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
US6217718B1 (en) 1999-02-17 2001-04-17 Applied Materials, Inc. Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
DE10058326C1 (en) * 2000-11-24 2002-06-13 Astrium Gmbh Inductively coupled high-frequency electron source with reduced power requirements due to electrostatic confinement of electrons
US6661165B2 (en) 2000-11-24 2003-12-09 Astrium Gmbh Inductively coupled high-frequency electron source with a reduced power requirement as a result of an electrostatic inclusion of electrons

Also Published As

Publication number Publication date
GB2162365B (en) 1989-06-01
EP0169744A3 (en) 1987-06-10
GB8518922D0 (en) 1985-09-04
EP0169744A2 (en) 1986-01-29

Similar Documents

Publication Publication Date Title
EP0169744A2 (en) Ion source
US5763989A (en) Closed drift ion source with improved magnetic field
US4713585A (en) Ion source
US6456011B1 (en) Magnetic field for small closed-drift ion source
Kaufman et al. Ion source design for industrial applications
US4316090A (en) Microwave plasma ion source
Morgan et al. Technology of Intense dc Ion Beams
Geller et al. The upgrading of the multiply charged heavy-ion source minimafios
Wutte et al. Emittance measurements for high charge state ion beams extracted from the AECR-U ion source
US4585541A (en) Plasma anodization system
US4703180A (en) Microwave discharge type ion source for ion injection devices
US2934665A (en) Ion source
CA2438098C (en) Magnetic field for small closed-drift thruster
Rahman Ion sources for use in research and low energy accelerators
Okumura et al. Cesium mixing in the multi‐ampere volume H− ion source
US4156159A (en) Self crossed field type ion source
JPS6193534A (en) Ion source
JP3454389B2 (en) Plasma heating method for ion beam generator
JPH0676775A (en) Ion implantation method
US3326769A (en) Energetic electron plasma blanket
Wutte et al. A 2.45 GHz ECR ion source for production of medium charge states ions
US7911120B2 (en) Source for providing an electron beam of settable power
JPS6386864A (en) Ion source
US4846953A (en) Metal ion source
JPH06325710A (en) Microwave ion source and ion implanting device

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee