KR970030470A - 유기 소자의 패시베이션 방법 및 패시베이션 유기소자 - Google Patents

유기 소자의 패시베이션 방법 및 패시베이션 유기소자 Download PDF

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Publication number
KR970030470A
KR970030470A KR1019960059227A KR19960059227A KR970030470A KR 970030470 A KR970030470 A KR 970030470A KR 1019960059227 A KR1019960059227 A KR 1019960059227A KR 19960059227 A KR19960059227 A KR 19960059227A KR 970030470 A KR970030470 A KR 970030470A
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organic
transparent
organic device
support substrate
passivation
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KR1019960059227A
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KR100420749B1 (ko
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비. 하비3세 토마스
시 송큐.
소 프랭키
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빈센트 비. 안그레시아
모토로라 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

지지되는 투명 플라스틱지지 기판상에에 위치되는 유기소자를 패시베이션 하는 방법은 투명 폴리머막과 투명 유전체재료의 교호층으로 구성된 다층오버 코팅으로 플라스틱 기판을 오버코팅하는 단계와, 오버 코팅된 투명 플라스틱지지 기판상에 유기소자를 형성하는 단계와, 오버코팅된 플라스틱 기판상에 형성된 유기소자를 밀봉하는 단계를 포함한다. 플라스틱 기판을 오버코팅하는데 사용된 폴리머 막층은 다층 오버코팅의 장벽 특성을 향상시키는 수단으로 작용하며, 유전체 재료는 유기소자를 부식시킬 수 있는 유기 LED의 신뢰성을 손상하는 대기 성분에 대한 물리적 장벽으로 작용한다.

Description

유기 소자의 패시베이션 방법 및 패시베이션 유기소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도9는 글롭 탑 형태의 에폭시 캡슐로 유기소자의 허메틱 밀봉을 나타내며, 본 발명의 오버코팅된 투명 플라스틱기판상에 형성된 유기 LED 어레이의 개략 단면도.

Claims (4)

  1. 유기소자를 패시베인션하는 방법에 있어서, 적어도 하나의 투명 폴리머막층과 적어도 하나의 투명 유전체 재료층의 교호층으로 다수의 평면을 구성하는 투명 플라스틱지지 기판을 오버코팅하는 단계와, 다수개의 픽셀을 규정하는 오버코팅된 투명 플라스틱지지 기판상에 유기소자를 제공하는 단계와, 투명 플라스틱지지 기판상에 제공되는 유기소자를 밀봉하는 단계를 구비하는 것을 특징으로 하는 유기소자의 패시베이션 방법.
  2. 유기소자를 패시베이션하는 방법에 있어서, 적어도 하나의 플로오르화 폴리머, 파릴렌 또는 사이클로텐으로 구성되는 폴리머와, 적어도 하나의 일산화 실리콘, 산화실리콘, 이산화실리콘 또는 질화실리콘으로 구성되는 투명유전체 재료의 교호층으로 다수개 평면으로 구성된 투명 플라스틱지지 기판을 오버포팅하는 단계와, 다수개의 픽셀을 규정하는 오버코팅된 플라스틱 지지기판상에 유기 LED 어레이를 제공하는 단계와, 캡슐화된 금속캔, 금속화된 플라스틱캡슐, 에폭시캡슐 또는 폴리머적층된 금속박 중 적어도 하나로 플라스틱 기판상에 제공되는 유기소자를 밀봉하는 단계로 구성되는 것을 특징으로 하는 유기소자의 패시베이션 방법.
  3. 유기소자 패시베이션에 있어서, 적어도 하나의 투명폴리머 막층과 적어도 하나의 유전체 재료층의 교호층으로 오버코팅된지지 투명 플라스틱지지 기판과, 다수의 픽셀에 규정하는지지 플라스턱 기판상에 형성된 유기소자와, 유기소자를 밀봉하기 위해 위치된 밀봉층으로 구성되는 것을 특징으로 하는 유기소자의 패시베이션.
  4. 유기소자 패시베이션에 있어서, 적어도 하나의 플로오르화 폴리머, 파릴렌 또는 사이클로텐으로 구성된 적어도 하나의 폴리머 막층과, 적어도 하나의 일산화실리콘, 산화실리콘, 이산화실리콘 또는 질화실리콘으로 구성된 적어도 하나의 유전체 재료층의 교호층으로 오버코팅된지지 투명 플라스틱지지 기판과; 다수개의 픽셀을 규정하는지지 플라스틱 기판상에 형성된 유기소자와, 유기소자를 위해 위치된 밀봉층을 특징으로 하는 유기소자 패시베이션.
KR1019960059227A 1995-11-30 1996-11-29 유기소자의패시베이션방법및패시베이션유기소자 KR100420749B1 (ko)

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Application Number Priority Date Filing Date Title
US08/565,124 US5686360A (en) 1995-11-30 1995-11-30 Passivation of organic devices
US565,124 1995-11-30

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KR970030470A true KR970030470A (ko) 1997-06-26
KR100420749B1 KR100420749B1 (ko) 2004-05-31

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US (2) US5686360A (ko)
EP (1) EP0777280B1 (ko)
JP (1) JP3579556B2 (ko)
KR (1) KR100420749B1 (ko)
DE (1) DE69615510T2 (ko)
TW (1) TW447146B (ko)

Cited By (2)

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KR100461844B1 (ko) * 2002-04-16 2004-12-20 (주)누리셀 다층박막 소자용 출발기판

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