TW447146B - Passivation of organic devices - Google Patents

Passivation of organic devices Download PDF

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Publication number
TW447146B
TW447146B TW085112589A TW85112589A TW447146B TW 447146 B TW447146 B TW 447146B TW 085112589 A TW085112589 A TW 085112589A TW 85112589 A TW85112589 A TW 85112589A TW 447146 B TW447146 B TW 447146B
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Taiwan
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layer
organic
transparent
plastic substrate
organic device
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TW085112589A
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English (en)
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Iii Thomas B Harvey
Song Q Shi
Franky So
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Motorola Inc
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • H10K50/8445Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/958Passivation layer

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Description

A7 4471 4 6 五、發明説明(1 ) --- 參考先前應用 本應用於1995年11月30曰,在美國提出申請,爲專利應 用第 08/565,124 號。 發明範圍 衣發明係關於有機裝置,且更特定言之,係關於在塑膠 基材上經鈍化的有機裝置之形成。 發明背景 目前,利用有機顯示器的裝置,例如聚合物發光裝置' 是有潛力做爲多種有效且直接覲察型式之顧示器,諸如數 罕式手錶、電話、頂部磨光電腦、記綠器、網狀電話、計 斗器及其類似物3有機發光裝置通常组裝簡單、非常容易 而且便宜,不像無機發光裝置。所以也易於獲得多種 及大面積的裝置3 普通有機LED是組裝在玻璃基材上,因爲坡璃對於氧氣 和水蒸氣的低穿透性、水蒸氣和氧氣會導致腐蝕、其他形 式的分解,而且損害有機L E D的可靠性。本發明的構想, 係利用塑膠做爲組成有機L E D的承載基材3傳統的塑膠多 少都易於穿透氧氣和水分。當在塑膠基材上形成有機L E D 時’必須降低並減少氧氣和水分擴散過塑膠基材,在先前 <次明此是會導致有機l e d的分解=再者,l E D的額外有 機組件也容易和氧氣或水有不良的反應。 通常’爲此技藝所熟知的二度空間有機L E D排列,可做 爲顯像裝置的應用,係由許多排列在行和列的有機L e D ( 其中一词或者以上會形成像元)所组成的。在陣列中,每一 本纸張尺度適财SU家轉(CNS ) A4規格|7^72$7公|) ί請先闔讀背面之注意事項再>'寫本頁) 裝. -訂 經濟部中央標準局員工消費合作.杜印袈 447146 A7 B7 五、發明説明 种衣— 「靖先¾-¾背赴之注意事項再坻寫本頁) 個各別的有機LED通常和透光第一電極裝配在—起,有璣 電發光介質沉積在第一電極上,且在有機電發光介質頂端 有一個金屬電極3在形成有機LED時,通常利用—層反庳 性金屬做爲陰極,以便能確保有效電子注射電極和低操作 電壓然而,有機LED在塑膠基材上形成時,不僅是氧氣 和水分容易穿透基材,而且反應性金屬也對氧氣和水分敏 感,特別是在操作的期間,因爲金屬氧化,因而會限制了 裝置的使用期限。通常在排列本身週圍需要氣密封,才能 達成長期的穩定性和壽命。在氣窜封的排列中,有幾種形 式的氣密封可以採用,而其中最普遍的是無機村料·,例/口 金屬及其類似物。所以,當在塑膠基材上形成有機時 ,可以藉由從有機L E D氣密封塑膠基材和氣密封陣列本 ,以阻斷氧氣和水蒸氣的穿透3 另一個問題是發生在有機裝置裝配和鈍化時,有機裝署 的有機層無法耐受高溫(例如通常大於約1〇〇χ:)。在許多^ 況下,即使接近有機層的臨界溫度,特別是在經提昇的^ 度維持相當長期,會分解有機忖料並且減少其可靠性和 或壽命; # 經濟部中央標準局負工消費合作社印製 在有機L E D形成時,有幾種型式的氣密封可以採用,〆 密封障財身’來保護錢裝z免於氧氣和7以氣的侵= ,如同先前敘述,目前採用最普遍的氣密封是由無機材枓 ’ Ή如金屬罐或導電塑料密封器所組成。這些里式的率封 装配昂貴,而且需要大量人力裝配s此外,金屬罐大且重 ,因此嚴重限制了有機裝置的應用。 ___-5- 本紙展尺度適用中國國家插卑((^)人4姑^^(210乂297公釐) 經濟部中央榡準局員工消費合作社印製 A7 B7 五、發明説明(3 ) —種較新的氣密封有機裝置方法,係利用無機材料,例 如陶瓷、電介質或金屬外塗覆在其上,以便在有機裝置的 遇遭旎夠氣密封。然而,有機裝置無法耐受高溫,可是這 些材料的沉積通常需要高溫。因此,通常要利用p£CVD方 法、'積陶走、電介質或金屬材料,方能符合低溫標準3 泛種密封方法的主要問題是,在PEc VD沉積期間 < 很可能 會輻射傷a 因此’極想要提出一種非常便宜和簡便的方法,在塑膠 基材上形成有機裝置,在其中塑膠基和周遭環境間,有 一個第一氣密封,可以保護塑醪基材免於氧氣、水分和其 他大氣成份的穿透,因此而損害有機LED,同時在有機裝 置陣列周遭有第二氣密封,可以保護該陣列免於受相似的 大氣元素損害。 本發明的目的係提供一種新穎且改良的方法,外塗覆塑 膠基以便能阻止氧氣和水分穿透。 本發明另一個目的,係提供一種新穎且改良的方法,在 塑膠基材上形成鈍化有機裝置3 本發明尚有一値目的,係提供一種新顆並且改良的方法 ,可以相當簡便而且便宜地完成,於塑膠基材上形成鈍化 有機裝置。 發明摘述 至少部价解決以上問題及其他問題,在承載的透明塑膠 基材上形成有機裝置的方法,可以實現以上的目的和其他 目的,孩方法包括沉積多層外塗層在塑膠基材上的步驟3 -_____-6 - 本紙張尺度賴巾gg家標準(CMS ) A4現格(210X297公釐)* "— --- (請先"讀背如之注意事項再填寫本頁) -裝 -=& 44714 6 A7 B7 經濟部中央橾隼局員工消費合作社印製 五、發明説明(4 、固透”合物薄膜和透明無機材料(例如—氧切、氧化 夕-氧化石夕或氮化碎)的薄又替看组成多層外塗屢、 明無機材料係沉積在至少-個塑膠基忖平面上。多層外塗 層係沉積在至少一個塑膠基材的平面上,而其上形成有機 led 3或者,多層外塗層係沉積在塑膠基材的所在平面上 ’因此’將塑膠基材封人透明無機材料和聚合物薄膜的交 替層内部,接著再於其上形成有機LED。此多層外塗層係 用以減少並消除氧氣和水分擴散诵過裀膠基材,此擴散會 損傷在其上所形成·之有機led。: · 在較佳具體實施例中,聚合物薄膜層和無機電介質材料 層’每一個依靠不同機制來保護,免於氧氣和水分會穿透 過塑膠基材3聚合物薄膜層是用來改良多層外塗層阻隔性 成的方式,並且幫助減緩水分和氧氣擴散過塑膠基材。透 明聚合物係選自包括經氟化的聚合物、帕里綸(parykne )和 赛克洛汀(cyclotenes)較佳。透明介電層係做爲物理阻隔水 分和氧氣擴教過塑膠基材。以一氧化矽、氧化碎、二氧化 秒或氮化矽的透明介電層較佳、聚合薄膜層和透明介電層 的摻合物’可以阻隔氧氣和水分,因此可以保護有機L E D ,免於受損傷3透明聚合薄膜層和透明介電層摻合形成多 層氣密封,以密封本發明的塑膠基材s爲了保護塑膠基材 見於水分和氩氣的渗-透」體實皮例、至少由二層_1_^ 外t層組成,包含聚合薄獏層和透明介電層的交替層。咸 該明瞭,利用少於二層之多層外塗層,或者包含多層外塗 層之任何摻合物,揭示其結果較不合I。 本紙張尺度適用中國國家樣準(CNS ) A4規格(210X297公釐) 扯衣------1T------^ {-靖先閱磧背釘之注意事項再填寫本頁) 44” 46 A-7 五、發明説明(5 經濟部中央標準局貝工消費合作社印製 圖形簡诚 參考圖形:_ 有=據本發明’在經外塗覆的塑勝基材上形成泛 有機LED陣列的簡化截面圖; 説覆的塑勝基材之放大簡化截面圖,進-步地 層外塗層:#明在最上面的平面上’塑膠基材的交替多 、圖4和。係是根據本發明’在經外塗覆的透明塑膠基村上 (有機L E D陣列的簡化截面圖#説明有機裝置的氣密封, 有很多層沉積在有機裝置上: , 圖6和7係疋根據本發明,在經外塗覆的透明塑膠基材上 元成有機L E D陣列之簡化戴面圖,進—步說明有金屬罐之 有機裝置的氣密封:圖8和9係是根據本發明,在經外塗覆的塑膠基材上形成 之有機LED陣列的簡化截面圖,説明有球頂環氧封裝物的 有機裝置之氣密封:和 圖1 〇和1 1係是根據本發明’在經外塗覆的透明塑膠基材 上形成的有機L E D陣列之簡化截面圖,進—步説明有聚合 物層壓金屬箔層的有機裝置之氣密封。 較佳具體實施例之說明 咸該瞭解圖形的本性,因爲各別層太薄、以致於無法說 明比例,或者按照一般比例3特別參考圖形,在其中類似 符號代表所有圖形中類似的部份,圖I和2是有機L E D陣列 簡化戴面圖,說明根據本發明在一個經外塗復的透明塑膠 ^1 (請先閲請背面之注^h項再填寫本頁 }
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11T -8 - 本紙張尺度逋用中國國家標隼(CNS ) Μ規格(210X297公釐) 4471^6 A7 B7 五、發明説明(6 ) 基材上’有機LED10的形成。 經濟部中央橾準局負工消费合作社印製 特定參考圖1,説明基材丨1,在本特別具體實施例中, 該基材係形成自一個視需要而選定之清潔塑膠。有機發光 裝置(L E D )的像元之陣列丨2位在基材1 1之上,通常將陣列 1 2组裝在多層外塗層1 6 (目前將要討論)上’而1 6則沉積在 基材1 1的頂平面上’可以任何方法组裝有機L e d。一個特 定實例,陣列丨2包含導電材料的迗明層1 3,例如氧化銦錫 U T 〇 )或其類似物,在其上有活性有糙層}^,例如有機電 發光層’及金屬層形成之陰椏Γ5/,該金屬·層包括—薄層的 低$此冬金屬。有機層i 4通常包括孔道傳輸層、發射層和 電子傳輸層。有機L E D的陣列1 2,及特別是反應性金屬層 ’對於周遭大氣的氧氣和水分很敏感,因此,必須經鈍化 才能具有可靠性和合理的使用壽命s 如同之前所説明的,陣列丨2是形成在塑膠基材丨丨上3由 於原^ Y尤已經ί參透塑膠的氧氣和水蒸氣,所以在基材1 1上 必須沉積氣封的多層外塗層丨6,以便能保護於其上所形成 之陣列1 2 a爲了降低並且減少擴散過塑膠基材η的氧氣和 水分’多層外塗層! 6要包含至少二交替層的聚合笔 透明介電材料1 8丄isuHL在圖3所説明),沉積在基材11上。 堆置的多層外塗層1 6必須位在能夠阻止氧氣或水分穿透 塑膠基材丨1的位置’否則其中會損傷有機L e D »因此,多 層外塗層1 6可以位於基忖〖丨的最上面或較低的表面’或者 ’因此可位於基材i i的所有表面上,因此多層外塗層1 6將 基材1 1封在其中3如同在圖1所説明之,多層外塗層係沉 _-9- 本紙铁尺度適用中國國家揉準(CMS ) A4規格(210X297公着) "" " ~ A47146 A7 — --__一 一 B7_ 五、發明説明(7 ) "~~ 一 積在基材11的最上面的表平面上,位於基材"和陣列12 之導電材料透明層13之間。另一個具體實施例揭示外塗看 16是沉積在塑膠基材Η的較低表平面上,而陣和則直 接形成在基材U的最上面之表面上(沒有顯示),或者如圖 2所浞明ι ’多層外塗層^ 6,沉積在包含有基材η的許, 表平面上如此才忐元全莕封基材η s組成有機LEDi〇的 陣列12時,附加多層外塗層16,可以使得有機ledi〇| 塑膠基材11上形成a 經濟部中央橾準局員工消费合作社印掣 ---------^------ίτ (請先閱讀背面之注意事項再填窍本頁) 如同之則所敘述並在圖3中所:說明之,多層外塗層1 6是 由透明聚合薄模1 7和透明介電材料層i 8的交替層所组成。 車父佳具體實施例包含至少兩層摻合之聚合物薄膜丨7和介電 材料層I 8。咸該明瞭,本揭示應事先討論交替層次序相反 的情況=在應用的時候,聚合物薄雎層1 7是改良多層外泛 層的阻隔特性,因此減壤也_分权氳處邊散過塑勝基材U。 可以用來組成聚合物薄膜層1 7的聚合物,係選自包括強靭 的聚合物’例如經氟化的聚合物、帕里綸和赛克洛汀3可 以經由浸潰基材]1的方法、旋轉塗佈的方法、濺鍍方法、 或者以蒸發塗佈基材11、來塗佈上聚合薄膜層17 3介電材 料層1 8係作爲物理阻隔,以阻斷水分和氧氣擴—散 ’由於其會損傷有機LED裝置i〇a以一氧化矽(SiO)、氧 化矽(SiOx )、二氧化矽(s丨〇 2)或者氮化矽(s丨3 n 4 )其中一 個组成介電材料層1 8較佳,並且利用熱蒸發、賤鍍或 PEC VD方法’和聚合物薄獏層丨7,以間隔交替層的方式, 塗佈在基材1 I上。 ___- 10- 本紙張尺度逋用中國國家標率(CNS ) A4規格(210X297公廣) 447146 A7 B7 五、發明説明(8 ) 根據本發明,有機L E D裝置2 0的第一個具體實施例中, 有多層沉積在有機LED上组成之氣密封,並且再進一步組 成在多層外塗覆的塑膠基材11上,在圖4和5中說明之。陣 列1 2是組成在經沉積的塑勝基材1 1上,其上如之前說明之 ,係由聚合物薄膜層1 7和介電材料層1 8之多層交替層组成 多層外塗層1 6。如在圖4説明之,多層外塗層1 6係沉積在 基材II之最上層表面上》如圖5說明之,另一個具體實施 例爲多層外塗層1 6沉積在基:村1 1之所有平面上,因此可以 將基材1 1封入内部,而能提供更好的保護基材1 1。 在组成裝置2 0之陣列1 2的氣密封時,陣列I 2和氣-密封系 統2 2 —起經外塗覆’包含緩衝系統,該系統通常至少要和 陣列1 2的一些特徵配合,成一個密閉系統3在本特殊辱密 ΐί多統2_2中’由許多層組成’包括有機材料的緩衝第一層 2 4 ’通常該材料係作爲保護陣列1 2。緩衝層2 4可爲有機 聚合物’或有機金屬複合物。典型之有機聚合物,方便採 用的是帕里綸及其類似物。 經濟部中央榇準局貝工消費合作.社印 此等聚合物(例如帕里綸及其類似物)的熱膨脹係數(C Τ Ε ) 低、接近陣列1 2的C T E,如此在熱循環期間,不會產生壓 力或壓力很小。同時,這些聚合物的介電常數低,而且對 氧氣和水分的可透性低。 在實例中,併入有機金屬複合物做爲緩衝層24,是一層 三(8 -羥基唛啉酸)鋁(a 1 q )或其類似物置積在陣列上面, 而非有機聚合物.,因爲許多有機裝置利用A 1 q在活性層中( 做爲放射器和/或電子傳遞材料),所以衣材料係唯一可和 . -11 ** 本紙張尺度適用中國g家揉隼(CNS )从说格(210X297公釐) 經濟部中央標準局員工消費合作社印装 A7 五、發明説明(9 ) - 陣列12相配合,且也容易將緩衝潛24加入陣列12中,而 不需要額外的材料和儀器s熟請本技藝者咸該明瞭,其他 可用於有機裝置特殊陣列的活性層材料,也可以用於緩衝 層2 4 » •利用熱係數相合層26來覆蓋或塗佈緩衝層24,該層26在 '爰衝系統中爲第—層。接著,接低穿透性的無機層2 8置堆 過熱係數相合層2 6,以外塗復熱係數相合層2 6。在下面將 列出一些典型的熱係數相合層2 6和無機層2 8的實例。可以 ’ J用一氧化矽(s 1 〇 2 )作爲熱係:數相合層2.6,而以氮化矽 (Si^4)作爲禅機層28。在一個有些不同的具體實施例中 ,低逸出功金屬,例如鋰(Li)或鎂(Mg)、做爲熱係數相合 層2 6,而且進一步地做爲收集材料,以吸收一些在無機層 中經陷落的氣體及其類似者。在本實例中,利用穩定金屬 如鋁(AI)或銦(In)做爲無機層28,和經定位的電介質(沒 有顯示出來)連接在一起,如此方能和無機層2 8分開,該 無機層2 8由穩(安)定的金屬组成,因此可防止陣列丨2短路 。在本實例中,無機層2 8的穿透性低,如此才能完全封入 、或者氣舍封陣列1 2。要得到利用多層.氣密封陣列1 2的資 訊’可參閱同在申請中之美_專利應用,標題有機裝置之 鈍化·,’在1995年5月1日提出申請,編號第08/43 1,996號, 且讓與給相同的讓受人。 杈據本發明’有機L E D裝置3 0的第二個具體.實絶例,在 圖6和7中説明,·有一個由金屬罐32將有機LED封入其中的 氣密封,並且進一步在多層經外塗覆的塑膠基材u上形成 -12- 本紙張尺度適用中國國家標準(CMS ) A4規格(210X297公釐Ί '~~- C锜先閱讀背妒之注意事項鼻4寫本頁) 裝·
*1T 447146 A7 B7 五、發明説明(10 經濟部中央標準局舅工消費合作社印製 α説明之’陣列12形成在塑膠基材11之上’而之前已說 明塑膠基材1 i上已有多層外塗層丨6沉積於其上。圖6所說 月之多層外塗層1 6沉積在基材丨j的最上表面上3圖7所 說明;,係另—個具體實施例,多層外塗層1 6將基材1丨封 入其内部’在形成陣列丨2的氣密封時,如同本技藝所熟知 者’金屬罐3 2將陣列1 2密封住,可以保護有機L E D装置 免受大氣元素之傷害3 很據本發明’有機L E D裝1的第三和第四具體實施例, 分別標示爲4 〇和5 〇,在有機[eP沉積許多層,而形成氣密 封’再進一步地组成在經外塗覆的塑膠基材丨丨上,圖8 q 1 所敘述的。延化有機L e D之此另一個方法’同在申請中的 美國專利應用,標題,,有機装ί之鈍化’,中揭示,因此同一 曰期申請’並且讓與给相同的受讓人。如圖8 1中之説明 ’陣列1 2在基村1 i上形成,該基材1 1已有多層外塗層i 6 沉積於其上。如圖8和1 0之説明’多層外塗層1 6置堆在基 材1 1的最上層表面上(如前面之説明)。如圖9和1 1之説明 ’另一悃具體實施例,有多層外塗層16將基材π封入其内 部(如之前的說明)。在形成圖形8 - 1 1的陣列i 2之氣密封時 ,利用一層穩定金屬5 4 ’例如銦(I η)及其類似物,先覆蓋 组成陣列1 2的各別像元的頂端,或先使其經外塗復。衣覆 Α頂端或外塗層係作爲起始保護塗層,以保護組成陣列1 2 的 '各別像元= 接著,通常利+用如本發明先前的具體實施例中説明的相 同分層技術,外塗層已經穩定金屬層5 4覆蓋頂端的陣列1 2 -13-_ 本紙乐尺度適用中國國家標準(CNS ) A4規格(2丨〇><四7公変) (請先聞讀背^之注意京.項再填寫本頁〕 •裴
*1T i Λ: A? B7 11 五、發明説明( ,該先前具體實施例如圖4和5中> 7 T疋私明5在陣列i 2上先置 積第一緩衝系統5 6,接著再—哉導任私〜人 熟導係數相合層5δ =蚨後, 熱導係數相合層5 S上置積低穿透性益 … 砭丨王棵璣層60 ,外塗覆過埶 導係數相合層58。 復χ_..、 最後利用一層環氧樹脂封裝物4 7, „ . 衣仍42或一層聚合物層合金 屬箔5 2來密对陣列1 2,如圖8知Q以主-[ . 和9所表不的是經鈍化有機 裝置的較佳具體實抱例’在其中利吐Tg炉w 、甲利用球頂環氧樹脂封裝物 42密封有機LED陣列12。在另—個具體實施例中,如圖 1〇和Η所説明之,利用聚合物層合金屬搭”密封有機 L E D陣列1 2。 雖然已經展示並且説明本發明之特殊具體實袍例’,熟諳 此藝者就會進一步修改和改良。希望咸明瞭,本發明並2 有被限制於特殊形式中,並且在附上的申請專利範圍中, 能涵蓋不背離本發明之精神和範圍的所有修改。 ---------^------1Τ <请先Μ-讀背d&.之注意事項再填寫本買) 經濟部中央標準局負工消费合作社印製 -14 張尺度適用中囷國家揉孪(CNS ) Α4規格(210X297公釐)

Claims (2)

  1. 447146 A8 B农 C8 D8 經濟部中央標準局員工消費合作社印製 七、申請專利範圍 1 _ 一種化有機装置的方法,其包括以下步戰: 於包含許多平表面之透明塑膠承載基材上,以至少— 個透明聚合物薄獏層和至少一個透明介電材料層的交扶 層外塗覆: 在經外塗覆的透明塑膠承載基材上提供有機裝置,界 定許多像元:而且 Φ封在透明塑膝承載基材上的有機裝置3 2. —種鈍化有機裝置的方法,其包括以下步驟: 於包含許多平表面之透明塑膠基材上,以包含至少— 種氟化聚合物、帕里綸(parylenes)或赛克洛汀 (cyclotenes )之聚合物和透明介電材料,包含至少—種— 氡化矽、氧化矽、二氧化矽或氮化矽之透明介電材料之 交替層進行外塗覆: 在經外塗覆的塑膠承載基材上提供有機LED陣列,界 定許多像元··且 利用至少一種金屬罐封裝物、敷金屬的塑膠封裝物' 環氧樹脂封裝物或聚合物層合金屬洛,密封在塑膠基材 上提供的有機裝置3 3· 一種經鈍化的有機裝置,其包含: 一個承載用透明塑膠基材,已利用至少一個透明聚合 物溥联層和至少一個介電材料層的交替層外塗復: -在孩承載塑膠基材上已形成一個有機裝置,界定許多 像元:而且 . 一偶密封層經定位在密封該有機裝置之位置上。 -15- 本紙張尺度ϋ财關家(.2!())< 297公蹇) ,t.------ΐτ------球 (請先閲讀背*·之注意事項再填寫本頁)
  2. 7 - A AS ,α . B8 CS DS 、申請專利範圍 . 4.—種經鈍化的有機裝置,其包含: 一個承載透明塑膠基材,已利用至少一個聚合物薄膜 層和至少一個介電材料層的交替層外塗覆,該聚合物薄 膜層包含至少一種氟化聚合物、帕里綸或赛克洛汀,該 介電材料層包含至少一種一氧化矽、氧化矽、二氧化矽 或氣化珍: 一個已承載的塑膠基材上形成之有機裝置,界定許多 像元:和 一個密封層經定位在密封該.有機裝置之位置上> ^11------妹—.. * _ (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消费合作社印製 -16 - 本纸浪尺度適用中國舀家標準(CNS ) A4規格(210X297公釐)
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10038012B2 (en) 2002-12-27 2018-07-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof, delamination method, and transferring method
CN111430423A (zh) * 2020-04-02 2020-07-17 京东方科技集团股份有限公司 Oled显示面板及其制作方法、显示装置

Families Citing this family (333)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5811177A (en) * 1995-11-30 1998-09-22 Motorola, Inc. Passivation of electroluminescent organic devices
US5952778A (en) * 1997-03-18 1999-09-14 International Business Machines Corporation Encapsulated organic light emitting device
US6198220B1 (en) * 1997-07-11 2001-03-06 Emagin Corporation Sealing structure for organic light emitting devices
EP1021255A1 (en) * 1997-07-11 2000-07-26 Fed Corporation Sealing structure for organic light emitting devices
JP3887079B2 (ja) * 1997-09-29 2007-02-28 新日鐵化学株式会社 多重型多色発光有機電界発光素子
US6224948B1 (en) 1997-09-29 2001-05-01 Battelle Memorial Institute Plasma enhanced chemical deposition with low vapor pressure compounds
KR100249784B1 (ko) * 1997-11-20 2000-04-01 정선종 고분자복합막을이용한유기물혹은고분자전기발광소자의패키징방법
US6146225A (en) * 1998-07-30 2000-11-14 Agilent Technologies, Inc. Transparent, flexible permeability barrier for organic electroluminescent devices
US6635989B1 (en) * 1998-08-03 2003-10-21 E. I. Du Pont De Nemours And Company Encapsulation of polymer-based solid state devices with inorganic materials
US6080031A (en) * 1998-09-02 2000-06-27 Motorola, Inc. Methods of encapsulating electroluminescent apparatus
EP1054747A1 (en) * 1998-09-22 2000-11-29 Fed Corporation Color organic light-emitting device structure and method of fabrication
US7126161B2 (en) 1998-10-13 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having El layer and sealing material
US6274887B1 (en) 1998-11-02 2001-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
CA2353506A1 (en) 1998-11-02 2000-05-11 3M Innovative Properties Company Transparent conductive oxides for plastic flat panel displays
US7141821B1 (en) * 1998-11-10 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an impurity gradient in the impurity regions and method of manufacture
US7022556B1 (en) 1998-11-11 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Exposure device, exposure method and method of manufacturing semiconductor device
US6277679B1 (en) 1998-11-25 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing thin film transistor
US6207239B1 (en) 1998-12-16 2001-03-27 Battelle Memorial Institute Plasma enhanced chemical deposition of conjugated polymer
US6228436B1 (en) * 1998-12-16 2001-05-08 Battelle Memorial Institute Method of making light emitting polymer composite material
US6274204B1 (en) 1998-12-16 2001-08-14 Battelle Memorial Institute Method of making non-linear optical polymer
US6228434B1 (en) * 1998-12-16 2001-05-08 Battelle Memorial Institute Method of making a conformal coating of a microtextured surface
US6207238B1 (en) * 1998-12-16 2001-03-27 Battelle Memorial Institute Plasma enhanced chemical deposition for high and/or low index of refraction polymers
EP1524708A3 (en) * 1998-12-16 2006-07-26 Battelle Memorial Institute Environmental barrier material and methods of making.
US6217947B1 (en) 1998-12-16 2001-04-17 Battelle Memorial Institute Plasma enhanced polymer deposition onto fixtures
US6268695B1 (en) * 1998-12-16 2001-07-31 Battelle Memorial Institute Environmental barrier material for organic light emitting device and method of making
US6960877B1 (en) * 1998-12-17 2005-11-01 Cambrdige Display Technology Limited Organic light-emitting devices including specific barrier layers
JP3817081B2 (ja) * 1999-01-29 2006-08-30 パイオニア株式会社 有機el素子の製造方法
US7697052B1 (en) 1999-02-17 2010-04-13 Semiconductor Energy Laboratory Co., Ltd. Electronic view finder utilizing an organic electroluminescence display
US6358570B1 (en) 1999-03-31 2002-03-19 Battelle Memorial Institute Vacuum deposition and curing of oligomers and resins
US6506461B2 (en) 1999-03-31 2003-01-14 Battelle Memorial Institute Methods for making polyurethanes as thin films
ID30404A (id) * 1999-04-28 2001-11-29 Du Pont Perangkat elektronik organik yang fleksibel dengan daya tahan terhadap penguraian oksigen dan air yang lebih baik
US6680487B1 (en) 1999-05-14 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same
US8853696B1 (en) 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
TW527735B (en) 1999-06-04 2003-04-11 Semiconductor Energy Lab Electro-optical device
US7288420B1 (en) 1999-06-04 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
US6174613B1 (en) * 1999-07-29 2001-01-16 Agilent Technologies, Inc. Method and apparatus for fabricating polymer-based electroluminescent displays
TW516244B (en) 1999-09-17 2003-01-01 Semiconductor Energy Lab EL display device and method for manufacturing the same
JP3942770B2 (ja) * 1999-09-22 2007-07-11 株式会社半導体エネルギー研究所 El表示装置及び電子装置
JP3423261B2 (ja) * 1999-09-29 2003-07-07 三洋電機株式会社 表示装置
TW480722B (en) 1999-10-12 2002-03-21 Semiconductor Energy Lab Manufacturing method of electro-optical device
US20100330748A1 (en) * 1999-10-25 2010-12-30 Xi Chu Method of encapsulating an environmentally sensitive device
US6623861B2 (en) 2001-04-16 2003-09-23 Battelle Memorial Institute Multilayer plastic substrates
US20070196682A1 (en) * 1999-10-25 2007-08-23 Visser Robert J Three dimensional multilayer barrier and method of making
US6548912B1 (en) 1999-10-25 2003-04-15 Battelle Memorial Institute Semicoductor passivation using barrier coatings
US20090191342A1 (en) * 1999-10-25 2009-07-30 Vitex Systems, Inc. Method for edge sealing barrier films
US6413645B1 (en) * 2000-04-20 2002-07-02 Battelle Memorial Institute Ultrabarrier substrates
US7198832B2 (en) * 1999-10-25 2007-04-03 Vitex Systems, Inc. Method for edge sealing barrier films
US6573652B1 (en) * 1999-10-25 2003-06-03 Battelle Memorial Institute Encapsulated display devices
US6866901B2 (en) * 1999-10-25 2005-03-15 Vitex Systems, Inc. Method for edge sealing barrier films
US7112115B1 (en) 1999-11-09 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US6646287B1 (en) 1999-11-19 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with tapered gate and insulating film
US20010053559A1 (en) * 2000-01-25 2001-12-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating display device
TW494447B (en) 2000-02-01 2002-07-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7129918B2 (en) * 2000-03-10 2006-10-31 Semiconductor Energy Laboratory Co., Ltd. Electronic device and method of driving electronic device
TWI226205B (en) * 2000-03-27 2005-01-01 Semiconductor Energy Lab Self-light emitting device and method of manufacturing the same
US6492026B1 (en) 2000-04-20 2002-12-10 Battelle Memorial Institute Smoothing and barrier layers on high Tg substrates
US7579203B2 (en) 2000-04-25 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20010052752A1 (en) * 2000-04-25 2001-12-20 Ghosh Amalkumar P. Thin film encapsulation of organic light emitting diode devices
US7633471B2 (en) * 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
JP5183838B2 (ja) * 2000-05-12 2013-04-17 株式会社半導体エネルギー研究所 発光装置
US6867539B1 (en) * 2000-07-12 2005-03-15 3M Innovative Properties Company Encapsulated organic electronic devices and method for making same
JP2002056986A (ja) * 2000-08-09 2002-02-22 Korai Kagi Kofun Yugenkoshi 放熱効果を有する有機エレクトロルミネッセンスデバイス、及びその製造方法
US6605826B2 (en) 2000-08-18 2003-08-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
MY141175A (en) * 2000-09-08 2010-03-31 Semiconductor Energy Lab Light emitting device, method of manufacturing the same, and thin film forming apparatus
DE10044841B4 (de) 2000-09-11 2006-11-30 Osram Opto Semiconductors Gmbh Plasmaverkapselung für elektronische und mikroelektronische Bauelemente wie OLEDs sowie Verfahren zu dessen Herstellung
JP2002100469A (ja) * 2000-09-25 2002-04-05 Pioneer Electronic Corp 有機エレクトロルミネッセンス表示パネル
US6924594B2 (en) * 2000-10-03 2005-08-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2002170678A (ja) * 2000-12-01 2002-06-14 Canon Inc 有機エレクトロルミネッセンス素子
US6537688B2 (en) 2000-12-01 2003-03-25 Universal Display Corporation Adhesive sealed organic optoelectronic structures
JP2004519081A (ja) * 2001-02-05 2004-06-24 ダウ グローバル テクノロジーズ インコーポレイティド プラスチック基板上の有機発光ダイオード
US6614057B2 (en) 2001-02-07 2003-09-02 Universal Display Corporation Sealed organic optoelectronic structures
US7222981B2 (en) * 2001-02-15 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
US6576351B2 (en) * 2001-02-16 2003-06-10 Universal Display Corporation Barrier region for optoelectronic devices
US6822391B2 (en) * 2001-02-21 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, electronic equipment, and method of manufacturing thereof
US20050274322A1 (en) * 2001-02-26 2005-12-15 Lee Chung J Reactor for producing reactive intermediates for low dielectric constant polymer thin films
US6881447B2 (en) * 2002-04-04 2005-04-19 Dielectric Systems, Inc. Chemically and electrically stabilized polymer films
US6624568B2 (en) * 2001-03-28 2003-09-23 Universal Display Corporation Multilayer barrier region containing moisture- and oxygen-absorbing material for optoelectronic devices
US6664137B2 (en) * 2001-03-29 2003-12-16 Universal Display Corporation Methods and structures for reducing lateral diffusion through cooperative barrier layers
AU2002305393A1 (en) * 2001-05-04 2002-11-18 General Atomics O2 and h2o barrier material
JP2002343580A (ja) * 2001-05-11 2002-11-29 Pioneer Electronic Corp 発光ディスプレイ装置及びその製造方法
JP4041660B2 (ja) * 2001-05-31 2008-01-30 ユーディナデバイス株式会社 半導体装置及びその製造方法
US6692326B2 (en) 2001-06-16 2004-02-17 Cld, Inc. Method of making organic electroluminescent display
TW588570B (en) 2001-06-18 2004-05-21 Semiconductor Energy Lab Light emitting device and method of fabricating the same
JP4244120B2 (ja) * 2001-06-20 2009-03-25 株式会社半導体エネルギー研究所 発光装置及びその作製方法
US7211828B2 (en) 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
TW546857B (en) * 2001-07-03 2003-08-11 Semiconductor Energy Lab Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment
US6664730B2 (en) 2001-07-09 2003-12-16 Universal Display Corporation Electrode structure of el device
US7469558B2 (en) 2001-07-10 2008-12-30 Springworks, Llc As-deposited planar optical waveguides with low scattering loss and methods for their manufacture
US8415208B2 (en) 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
US6888307B2 (en) * 2001-08-21 2005-05-03 Universal Display Corporation Patterned oxygen and moisture absorber for organic optoelectronic device structures
US7351300B2 (en) * 2001-08-22 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
KR20010099356A (ko) * 2001-09-21 2001-11-09 김경현 파릴렌코팅방법
US20090208754A1 (en) * 2001-09-28 2009-08-20 Vitex Systems, Inc. Method for edge sealing barrier films
JP4166455B2 (ja) * 2001-10-01 2008-10-15 株式会社半導体エネルギー研究所 偏光フィルム及び発光装置
JP2003140561A (ja) * 2001-10-30 2003-05-16 Seiko Epson Corp 電気光学装置及びその製造方法並びに電子機器
JP4019690B2 (ja) * 2001-11-02 2007-12-12 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
US6888305B2 (en) * 2001-11-06 2005-05-03 Universal Display Corporation Encapsulation structure that acts as a multilayer mirror
US7404877B2 (en) 2001-11-09 2008-07-29 Springworks, Llc Low temperature zirconia based thermal barrier layer by PVD
US6597111B2 (en) 2001-11-27 2003-07-22 Universal Display Corporation Protected organic optoelectronic devices
US6753096B2 (en) 2001-11-27 2004-06-22 General Electric Company Environmentally-stable organic electroluminescent fibers
SG114514A1 (en) 2001-11-28 2005-09-28 Univ Singapore Organic light emitting diode (oled)
EP1459394B1 (en) * 2001-12-13 2014-10-29 Koninklijke Philips N.V. Sealing structure for display devices
JP4010394B2 (ja) * 2001-12-14 2007-11-21 大日本印刷株式会社 エレクトロルミネッセント素子
US6903505B2 (en) 2001-12-17 2005-06-07 General Electric Company Light-emitting device with organic electroluminescent material and photoluminescent materials
US6765351B2 (en) * 2001-12-20 2004-07-20 The Trustees Of Princeton University Organic optoelectronic device structures
US7012363B2 (en) * 2002-01-10 2006-03-14 Universal Display Corporation OLEDs having increased external electroluminescence quantum efficiencies
JP3865056B2 (ja) 2002-01-22 2007-01-10 セイコーエプソン株式会社 封止用基板の製造方法
US6936131B2 (en) 2002-01-31 2005-08-30 3M Innovative Properties Company Encapsulation of organic electronic devices using adsorbent loaded adhesives
US6884327B2 (en) 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
US20030175142A1 (en) * 2002-03-16 2003-09-18 Vassiliki Milonopoulou Rare-earth pre-alloyed PVD targets for dielectric planar applications
US7378356B2 (en) 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
JP2003282240A (ja) * 2002-03-25 2003-10-03 Pioneer Electronic Corp 有機エレクトロルミネッセンス表示パネル及び製造方法
JP2003282238A (ja) * 2002-03-25 2003-10-03 Pioneer Electronic Corp 有機エレクトロルミネッセンス表示パネル及び製造方法
JP2003282241A (ja) * 2002-03-25 2003-10-03 Pioneer Electronic Corp 有機エレクトロルミネッセンス表示パネル及び製造方法
JP4010845B2 (ja) * 2002-03-28 2007-11-21 富士フイルム株式会社 発光素子
US6891330B2 (en) * 2002-03-29 2005-05-10 General Electric Company Mechanically flexible organic electroluminescent device with directional light emission
KR20040102054A (ko) * 2002-03-29 2004-12-03 파이오니아 가부시키가이샤 유기 일렉트로루미네선스 표시패널
US20050158454A1 (en) * 2002-04-04 2005-07-21 Dielectric Systems, Inc. Method and system for forming an organic light-emitting device display having a plurality of passive polymer layers
US20070216300A1 (en) * 2002-04-04 2007-09-20 International Display Systems, Inc. Organic opto-electronic device with environmentally protective barrier
US20050174045A1 (en) * 2002-04-04 2005-08-11 Dielectric Systems, Inc. Organic light-emitting device display having a plurality of passive polymer layers
US6897474B2 (en) * 2002-04-12 2005-05-24 Universal Display Corporation Protected organic electronic devices and methods for making the same
US6835950B2 (en) 2002-04-12 2004-12-28 Universal Display Corporation Organic electronic devices with pressure sensitive adhesive layer
US8808457B2 (en) 2002-04-15 2014-08-19 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
US8900366B2 (en) 2002-04-15 2014-12-02 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
KR100461844B1 (ko) * 2002-04-16 2004-12-20 (주)누리셀 다층박막 소자용 출발기판
KR100462469B1 (ko) * 2002-04-17 2004-12-17 한국전자통신연구원 접착식 유기-무기 복합막을 갖춘 엔캡슐레이션 박막과이를 포함하는 유기 전기발광 소자
US6949389B2 (en) 2002-05-02 2005-09-27 Osram Opto Semiconductors Gmbh Encapsulation for organic light emitting diodes devices
US7164155B2 (en) * 2002-05-15 2007-01-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7230271B2 (en) 2002-06-11 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising film having hygroscopic property and transparency and manufacturing method thereof
TW569644B (en) * 2002-08-06 2004-01-01 Chi Mei Optoelectronics Corp Plastic substrate for organic electroluminescent display element, manufacturing method thereof and organic electroluminescent display element made by the substrate
AU2003254851A1 (en) * 2002-08-07 2004-02-25 Kabushiki Kaisha Toyota Chuo Kenkyusho Laminate having adherent layer and laminate having protective film
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8404376B2 (en) 2002-08-09 2013-03-26 Infinite Power Solutions, Inc. Metal film encapsulation
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
US9793523B2 (en) 2002-08-09 2017-10-17 Sapurast Research Llc Electrochemical apparatus with barrier layer protected substrate
JP3693118B2 (ja) * 2002-08-12 2005-09-07 セイコーエプソン株式会社 シリコンデバイスの製造方法及び液体噴射ヘッドの製造方法並びに液体噴射ヘッド
US6929864B2 (en) * 2002-08-17 2005-08-16 3M Innovative Properties Company Extensible, visible light-transmissive and infrared-reflective film and methods of making and using the film
US6818291B2 (en) * 2002-08-17 2004-11-16 3M Innovative Properties Company Durable transparent EMI shielding film
US6933051B2 (en) * 2002-08-17 2005-08-23 3M Innovative Properties Company Flexible electrically conductive film
US7215473B2 (en) * 2002-08-17 2007-05-08 3M Innovative Properties Company Enhanced heat mirror films
AU2003261463A1 (en) 2002-08-27 2004-03-19 Symmorphix, Inc. Optically coupling into highly uniform waveguides
JP2004095330A (ja) * 2002-08-30 2004-03-25 Tohoku Pioneer Corp 電子部品を覆う保護膜の形成方法および保護膜を備えた電子機器
US7224116B2 (en) * 2002-09-11 2007-05-29 Osram Opto Semiconductors Gmbh Encapsulation of active electronic devices
US20050181212A1 (en) * 2004-02-17 2005-08-18 General Electric Company Composite articles having diffusion barriers and devices incorporating the same
US7015640B2 (en) * 2002-09-11 2006-03-21 General Electric Company Diffusion barrier coatings having graded compositions and devices incorporating the same
US7449246B2 (en) * 2004-06-30 2008-11-11 General Electric Company Barrier coatings
US20060208634A1 (en) * 2002-09-11 2006-09-21 General Electric Company Diffusion barrier coatings having graded compositions and devices incorporating the same
US6887733B2 (en) * 2002-09-11 2005-05-03 Osram Opto Semiconductors (Malaysia) Sdn. Bhd Method of fabricating electronic devices
US20040048033A1 (en) * 2002-09-11 2004-03-11 Osram Opto Semiconductors (Malaysia) Sdn. Bhd. Oled devices with improved encapsulation
US7193364B2 (en) * 2002-09-12 2007-03-20 Osram Opto Semiconductors (Malaysia) Sdn. Bhd Encapsulation for organic devices
TW548853B (en) * 2002-09-13 2003-08-21 Ind Tech Res Inst Method of manufacturing flexible TFT display
US20040124421A1 (en) * 2002-09-20 2004-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and manufacturing method thereof
KR100662297B1 (ko) * 2002-10-18 2007-01-02 엘지전자 주식회사 유기 el 소자
JP2004152563A (ja) * 2002-10-30 2004-05-27 Canon Inc 表示装置
US7710019B2 (en) 2002-12-11 2010-05-04 Samsung Electronics Co., Ltd. Organic light-emitting diode display comprising auxiliary electrodes
US7011983B2 (en) * 2002-12-20 2006-03-14 General Electric Company Large organic devices and methods of fabricating large organic devices
TW586329B (en) * 2003-01-29 2004-05-01 Au Optronics Corp Sealing structure and method of making the same
GB0302550D0 (en) * 2003-02-05 2003-03-12 Cambridge Display Tech Ltd Organic optoelectronic device
US7042020B2 (en) * 2003-02-14 2006-05-09 Cree, Inc. Light emitting device incorporating a luminescent material
US7205662B2 (en) 2003-02-27 2007-04-17 Symmorphix, Inc. Dielectric barrier layer films
US7365442B2 (en) * 2003-03-31 2008-04-29 Osram Opto Semiconductors Gmbh Encapsulation of thin-film electronic devices
US7018713B2 (en) 2003-04-02 2006-03-28 3M Innovative Properties Company Flexible high-temperature ultrabarrier
US7510913B2 (en) 2003-04-11 2009-03-31 Vitex Systems, Inc. Method of making an encapsulated plasma sensitive device
US7648925B2 (en) 2003-04-11 2010-01-19 Vitex Systems, Inc. Multilayer barrier stacks and methods of making multilayer barrier stacks
US6888172B2 (en) * 2003-04-11 2005-05-03 Eastman Kodak Company Apparatus and method for encapsulating an OLED formed on a flexible substrate
KR100496286B1 (ko) 2003-04-12 2005-06-17 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 이의 제조 방법
KR20120061906A (ko) * 2003-05-16 2012-06-13 이 아이 듀폰 디 네모아 앤드 캄파니 원자층 증착에 의해 제작된 플라스틱 기판용 배리어 필름
GB0311234D0 (en) * 2003-05-16 2003-06-18 Isis Innovation Organic phosphorescent material and organic optoelectronic device
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US7238628B2 (en) 2003-05-23 2007-07-03 Symmorphix, Inc. Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US20040238846A1 (en) * 2003-05-30 2004-12-02 Georg Wittmann Organic electronic device
US6921929B2 (en) * 2003-06-27 2005-07-26 Lockheed Martin Corporation Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens
US20050023974A1 (en) * 2003-08-01 2005-02-03 Universal Display Corporation Protected organic electronic devices and methods for making the same
US6998648B2 (en) * 2003-08-25 2006-02-14 Universal Display Corporation Protected organic electronic device structures incorporating pressure sensitive adhesive and desiccant
US20050051763A1 (en) * 2003-09-05 2005-03-10 Helicon Research, L.L.C. Nanophase multilayer barrier and process
JP4497881B2 (ja) * 2003-09-30 2010-07-07 三洋電機株式会社 有機el素子および有機elパネル
JP4716699B2 (ja) * 2003-09-30 2011-07-06 三洋電機株式会社 有機elパネル
JP4428979B2 (ja) * 2003-09-30 2010-03-10 三洋電機株式会社 有機elパネル
JP2005123012A (ja) * 2003-10-16 2005-05-12 Pioneer Electronic Corp 有機エレクトロルミネセンス表示パネルとその製造方法
US7052355B2 (en) * 2003-10-30 2006-05-30 General Electric Company Organic electro-optic device and method for making the same
KR100563057B1 (ko) 2003-11-14 2006-03-24 삼성에스디아이 주식회사 초박형 유기 전계 발광 표시장치 및 그 제조방법
GB0327093D0 (en) * 2003-11-21 2003-12-24 Koninkl Philips Electronics Nv Active matrix displays and other electronic devices having plastic substrates
JP2005197009A (ja) * 2003-12-26 2005-07-21 Sanyo Electric Co Ltd 表示装置及びその製造方法及び製造装置
US7495644B2 (en) * 2003-12-26 2009-02-24 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing display device
JP4439260B2 (ja) * 2003-12-26 2010-03-24 三洋電機株式会社 表示装置の製造方法
JP4475942B2 (ja) * 2003-12-26 2010-06-09 三洋電機株式会社 表示装置及びその製造方法
US20050181535A1 (en) * 2004-02-17 2005-08-18 Yun Sun J. Method of fabricating passivation layer for organic devices
US7202504B2 (en) 2004-05-20 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and display device
DE102004026618A1 (de) * 2004-06-01 2005-12-29 Siemens Ag Röntgendetektor
US20050269943A1 (en) * 2004-06-04 2005-12-08 Michael Hack Protected organic electronic devices and methods for making the same
KR20060046476A (ko) 2004-06-18 2006-05-17 산요덴키가부시키가이샤 일렉트로루미네센스 패널
US20090110892A1 (en) * 2004-06-30 2009-04-30 General Electric Company System and method for making a graded barrier coating
US8034419B2 (en) * 2004-06-30 2011-10-11 General Electric Company Method for making a graded barrier coating
JP4792717B2 (ja) * 2004-07-07 2011-10-12 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、及び電子機器
JP4363365B2 (ja) * 2004-07-20 2009-11-11 株式会社デンソー カラー有機elディスプレイおよびその製造方法
US20060063015A1 (en) * 2004-09-23 2006-03-23 3M Innovative Properties Company Protected polymeric film
US7342356B2 (en) * 2004-09-23 2008-03-11 3M Innovative Properties Company Organic electroluminescent device having protective structure with boron oxide layer and inorganic barrier layer
JP2008515138A (ja) * 2004-09-24 2008-05-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 照明システム
CN100454606C (zh) * 2004-09-30 2009-01-21 清华大学 一种有机电致发光器件
KR100637197B1 (ko) * 2004-11-25 2006-10-23 삼성에스디아이 주식회사 평판 표시장치 및 그 제조방법
ATE447777T1 (de) 2004-12-08 2009-11-15 Symmorphix Inc Abscheidung von licoo2
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
KR100668408B1 (ko) * 2004-12-09 2007-01-16 한국전자통신연구원 유기 전계효과 트랜지스터의 제조방법
GB2421626A (en) * 2004-12-24 2006-06-28 Cambridge Display Tech Ltd Organic electroluminescent device
US20060145599A1 (en) * 2005-01-04 2006-07-06 Reza Stegamat OLEDs with phosphors
JP2006222071A (ja) * 2005-01-17 2006-08-24 Seiko Epson Corp 発光装置、発光装置の製造方法、及び電子機器
JP4631683B2 (ja) * 2005-01-17 2011-02-16 セイコーエプソン株式会社 発光装置、及び電子機器
JP2006216344A (ja) * 2005-02-03 2006-08-17 Dainippon Printing Co Ltd フレキシブル透明電極基板および有機elディスプレイデバイス
JP4573672B2 (ja) * 2005-02-28 2010-11-04 三洋電機株式会社 有機elパネル
JP2006243127A (ja) * 2005-03-01 2006-09-14 Victor Co Of Japan Ltd シートディスプレイ
KR100770257B1 (ko) * 2005-03-21 2007-10-25 삼성에스디아이 주식회사 유기전계 발광소자 및 그 제조방법
JP2006269338A (ja) * 2005-03-25 2006-10-05 Dainippon Printing Co Ltd フレキシブル透明電極基板および有機elディスプレイデバイス
US7541671B2 (en) * 2005-03-31 2009-06-02 General Electric Company Organic electronic devices having external barrier layer
JP2006310070A (ja) * 2005-04-28 2006-11-09 Dainippon Printing Co Ltd フレキシブル透明電極基板および有機elディスプレイデバイス
TWM281293U (en) * 2005-05-06 2005-11-21 Harvatek Corp Optoelectronic chip array package structure
KR100719554B1 (ko) * 2005-07-06 2007-05-17 삼성에스디아이 주식회사 평판 디스플레이 장치 및 그 제조방법
US20070020451A1 (en) * 2005-07-20 2007-01-25 3M Innovative Properties Company Moisture barrier coatings
US7767498B2 (en) 2005-08-25 2010-08-03 Vitex Systems, Inc. Encapsulated devices and method of making
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
US7549905B2 (en) * 2005-09-30 2009-06-23 International Display Systems, Inc. Method of encapsulating an organic light emitting device
US7621794B2 (en) * 2005-11-09 2009-11-24 International Display Systems, Inc. Method of encapsulating an organic light-emitting device
JP4702009B2 (ja) * 2005-11-22 2011-06-15 セイコーエプソン株式会社 発光装置および電子機器
TW200726311A (en) * 2005-12-30 2007-07-01 Au Optronics Corp Display panel structure with shielding structure
KR101194859B1 (ko) * 2006-05-02 2012-10-26 엘지디스플레이 주식회사 전계발광소자 및 그의 제조방법
DE102006027393A1 (de) 2006-06-13 2007-12-20 Applied Materials Gmbh & Co. Kg Verkapselung für organisches Bauelement
US20080006819A1 (en) * 2006-06-19 2008-01-10 3M Innovative Properties Company Moisture barrier coatings for organic light emitting diode devices
TWI421607B (zh) * 2006-08-24 2014-01-01 Creator Technology Bv 可撓性裝置上的滲透阻障
US8088502B2 (en) 2006-09-20 2012-01-03 Battelle Memorial Institute Nanostructured thin film optical coatings
CN101523571A (zh) 2006-09-29 2009-09-02 无穷动力解决方案股份有限公司 柔性基板上沉积的电池层的掩模和材料限制
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
KR101328879B1 (ko) * 2006-12-12 2013-11-13 엘지디스플레이 주식회사 플렉서블기판 및 이를 구비한 플렉서블 표시장치
WO2008083308A1 (en) 2006-12-28 2008-07-10 3M Innovative Properties Company Nucleation layer for thin film metal layer formation
KR20170019491A (ko) * 2006-12-29 2017-02-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 무기 또는 무기/유기 하이브리드 필름의 제조 방법
BRPI0721301A2 (pt) * 2006-12-29 2014-03-25 3M Innovative Properties Co Método para cura de filmes contendo alcóxido metálico
US7416820B2 (en) * 2007-01-31 2008-08-26 International Business Machines Corporation Pellicle film optimized for immersion lithography systems with NA>1
JP5020710B2 (ja) * 2007-06-06 2012-09-05 キヤノン株式会社 撮像装置及び交換レンズ
KR100873704B1 (ko) * 2007-06-13 2008-12-12 삼성모바일디스플레이주식회사 유기 전계 발광표시장치 및 그의 제조방법
JP5208591B2 (ja) 2007-06-28 2013-06-12 株式会社半導体エネルギー研究所 発光装置、及び照明装置
US20090162667A1 (en) * 2007-12-20 2009-06-25 Lumination Llc Lighting device having backlighting, illumination and display applications
US8268488B2 (en) 2007-12-21 2012-09-18 Infinite Power Solutions, Inc. Thin film electrolyte for thin film batteries
US9334557B2 (en) 2007-12-21 2016-05-10 Sapurast Research Llc Method for sputter targets for electrolyte films
KR101563025B1 (ko) 2007-12-28 2015-10-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 가요성 캡슐화 필름 및 그의 제조 방법
WO2009089417A1 (en) 2008-01-11 2009-07-16 Infinite Power Solutions, Inc. Thin film encapsulation for thin film batteries and other devices
WO2009090423A1 (en) * 2008-01-14 2009-07-23 Merck Patent Gmbh Barrier coated substrate and electro-optical device
EP2091096A1 (en) * 2008-02-15 2009-08-19 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Encapsulated electronic device and method of manufacturing
US7951620B2 (en) 2008-03-13 2011-05-31 Applied Materials, Inc. Water-barrier encapsulation method
CN101983469B (zh) 2008-04-02 2014-06-04 无穷动力解决方案股份有限公司 与能量采集关联的储能装置的无源过电压/欠电压控制和保护
US8350451B2 (en) 2008-06-05 2013-01-08 3M Innovative Properties Company Ultrathin transparent EMI shielding film comprising a polymer basecoat and crosslinked polymer transparent dielectric layer
KR20170005154A (ko) * 2008-06-30 2017-01-11 쓰리엠 이노베이티브 프로퍼티즈 컴파니 무기 또는 무기/유기 혼성 장벽 필름 제조 방법
FR2934417B1 (fr) 2008-07-25 2010-11-05 Centre Nat Rech Scient Composants electroniques a encapsulation integree
JP2012500610A (ja) 2008-08-11 2012-01-05 インフィニット パワー ソリューションズ, インコーポレイテッド 電磁エネルギー獲得ための統合コレクタ表面を有するエネルギーデバイスおよびその方法
WO2010030743A1 (en) 2008-09-12 2010-03-18 Infinite Power Solutions, Inc. Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof
FR2936651B1 (fr) * 2008-09-30 2011-04-08 Commissariat Energie Atomique Dispositif optoelectronique organique et son procede d'encapsulation.
US8033885B2 (en) * 2008-09-30 2011-10-11 General Electric Company System and method for applying a conformal barrier coating with pretreating
US20100080929A1 (en) * 2008-09-30 2010-04-01 General Electric Company System and method for applying a conformal barrier coating
WO2010042594A1 (en) 2008-10-08 2010-04-15 Infinite Power Solutions, Inc. Environmentally-powered wireless sensor module
EP2178133B1 (en) 2008-10-16 2019-09-18 Semiconductor Energy Laboratory Co., Ltd. Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device
BRPI0922795A2 (pt) * 2008-12-05 2018-05-29 Lotus Applied Tech Llc alta taxa de deposição de filmes finos com propriedades de camada de barreira melhorada
US9337446B2 (en) 2008-12-22 2016-05-10 Samsung Display Co., Ltd. Encapsulated RGB OLEDs having enhanced optical output
US9184410B2 (en) 2008-12-22 2015-11-10 Samsung Display Co., Ltd. Encapsulated white OLEDs having enhanced optical output
US8219408B2 (en) * 2008-12-29 2012-07-10 Motorola Mobility, Inc. Audio signal decoder and method for producing a scaled reconstructed audio signal
US20100167002A1 (en) * 2008-12-30 2010-07-01 Vitex Systems, Inc. Method for encapsulating environmentally sensitive devices
JP5471035B2 (ja) 2009-05-26 2014-04-16 ソニー株式会社 表示装置、表示装置の製造方法、および電子機器
US8766269B2 (en) 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
US20110005682A1 (en) 2009-07-08 2011-01-13 Stephen Edward Savas Apparatus for Plasma Processing
CN102576828B (zh) 2009-09-01 2016-04-20 萨普拉斯特研究有限责任公司 具有集成薄膜电池的印刷电路板
EP2292339A1 (en) 2009-09-07 2011-03-09 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Coating method and coating apparatus
US9101005B2 (en) * 2009-09-15 2015-08-04 Industrial Technology Research Institute Package of environmental sensitive element
US9472783B2 (en) * 2009-10-12 2016-10-18 General Electric Company Barrier coating with reduced process time
KR101117726B1 (ko) * 2009-12-15 2012-03-07 삼성모바일디스플레이주식회사 플렉서블 디스플레이용 기판, 이를 제조하는 방법, 및 이 기판제조방법을 이용한 유기 발광 디스플레이 장치의 제조 방법
US8753711B2 (en) * 2009-12-18 2014-06-17 General Electric Company Edge sealing method using barrier coatings
KR101108161B1 (ko) 2009-12-24 2012-01-31 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조방법
KR101359657B1 (ko) * 2009-12-30 2014-02-06 엘지디스플레이 주식회사 전자장치 및 유기전계발광장치, 다층보호막
US8590338B2 (en) 2009-12-31 2013-11-26 Samsung Mobile Display Co., Ltd. Evaporator with internal restriction
KR101155904B1 (ko) * 2010-01-04 2012-06-20 삼성모바일디스플레이주식회사 유기 발광 표시 장치
US9000442B2 (en) * 2010-01-20 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, flexible light-emitting device, electronic device, and method for manufacturing light-emitting device and flexible-light emitting device
TWI589042B (zh) * 2010-01-20 2017-06-21 半導體能源研究所股份有限公司 發光裝置,撓性發光裝置,電子裝置,照明設備,以及發光裝置和撓性發光裝置的製造方法
US9142804B2 (en) 2010-02-09 2015-09-22 Samsung Display Co., Ltd. Organic light-emitting device including barrier layer and method of manufacturing the same
KR101108166B1 (ko) * 2010-02-09 2012-01-31 삼성모바일디스플레이주식회사 실리콘 산화물막과 실리콘 리치 실리콘 질화물막을 포함하는 배리어층을 포함하는 유기 발광 장치
JP2011227369A (ja) 2010-04-22 2011-11-10 Hitachi Displays Ltd 画像表示装置及びその製造方法
US20110291544A1 (en) * 2010-05-31 2011-12-01 Industrial Technology Research Institute Gas barrier substrate, package of organic electro-luminenscent device and packaging method thereof
GB2481367B (en) * 2010-06-04 2015-01-14 Plastic Logic Ltd Moisture Barrier for Electronic Devices
EP2577777B1 (en) 2010-06-07 2016-12-28 Sapurast Research LLC Rechargeable, high-density electrochemical device
TWI540939B (zh) 2010-09-14 2016-07-01 半導體能源研究所股份有限公司 固態發光元件,發光裝置和照明裝置
JP5827104B2 (ja) 2010-11-19 2015-12-02 株式会社半導体エネルギー研究所 照明装置
JP6118020B2 (ja) 2010-12-16 2017-04-19 株式会社半導体エネルギー研究所 発光装置
US8765232B2 (en) 2011-01-10 2014-07-01 Plasmasi, Inc. Apparatus and method for dielectric deposition
US8735874B2 (en) 2011-02-14 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, display device, and method for manufacturing the same
KR101922603B1 (ko) 2011-03-04 2018-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치, 조명 장치, 기판, 기판의 제작 방법
FR2977720A1 (fr) * 2011-07-08 2013-01-11 Commissariat Energie Atomique Dispositif optoelectronique organique et son procede d'encapsulation.
EP2742537A4 (en) 2011-08-04 2015-05-20 3M Innovative Properties Co BARRIER ASSEMBLIES ON PROTECTED
WO2013019698A1 (en) * 2011-08-04 2013-02-07 3M Innovative Properties Company Edge protected barrier assemblies
KR20130065219A (ko) 2011-12-09 2013-06-19 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP5577373B2 (ja) * 2012-04-16 2014-08-20 株式会社半導体エネルギー研究所 発光装置
KR102079188B1 (ko) 2012-05-09 2020-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기
US9761830B1 (en) 2012-05-14 2017-09-12 Eclipse Energy Systems, Inc. Environmental protection film for thin film devices
US9299956B2 (en) 2012-06-13 2016-03-29 Aixtron, Inc. Method for deposition of high-performance coatings and encapsulated electronic devices
US10526708B2 (en) 2012-06-19 2020-01-07 Aixtron Se Methods for forming thin protective and optical layers on substrates
US9991399B2 (en) 2012-10-04 2018-06-05 Cree, Inc. Passivation structure for semiconductor devices
US9812338B2 (en) * 2013-03-14 2017-11-07 Cree, Inc. Encapsulation of advanced devices using novel PECVD and ALD schemes
CN103904248B (zh) * 2012-12-25 2016-08-03 海洋王照明科技股份有限公司 有机电致发光器件及其制备方法
US9196849B2 (en) * 2013-01-09 2015-11-24 Research & Business Foundation Sungkyunkwan University Polymer/inorganic multi-layer encapsulation film
WO2014129519A1 (en) 2013-02-20 2014-08-28 Semiconductor Energy Laboratory Co., Ltd. Peeling method, semiconductor device, and peeling apparatus
KR102034253B1 (ko) 2013-04-12 2019-10-21 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
KR102081285B1 (ko) * 2013-04-16 2020-02-26 삼성디스플레이 주식회사 증착마스크, 이를 이용한 디스플레이 장치 제조방법 및 이에 따라 제조된 디스플레이 장치
TWI557962B (zh) * 2013-08-23 2016-11-11 鴻海精密工業股份有限公司 有機發光二極體封裝結構及其製造方法
US9293730B2 (en) 2013-10-15 2016-03-22 Samsung Display Co., Ltd. Flexible organic light emitting diode display and manufacturing method thereof
JP6322380B2 (ja) 2013-10-17 2018-05-09 株式会社ジャパンディスプレイ 表示装置
WO2015087192A1 (en) 2013-12-12 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus
WO2016063869A1 (ja) * 2014-10-22 2016-04-28 コニカミノルタ株式会社 光取り出し基板、光取り出し基板の製造方法、有機エレクトロルミネッセンス素子、及び、有機エレクトロルミネッセンス素子の製造方法
US9991326B2 (en) * 2015-01-14 2018-06-05 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device comprising flexible substrate and light-emitting element
JP6474337B2 (ja) * 2015-08-27 2019-02-27 株式会社ジャパンディスプレイ 表示装置及びその製造方法
WO2017043057A1 (ja) * 2015-09-08 2017-03-16 シャープ株式会社 有機el表示装置
KR102550694B1 (ko) * 2016-07-12 2023-07-04 삼성디스플레이 주식회사 플렉서블 표시 장치 및 이의 제조 방법
JP6297654B2 (ja) * 2016-09-29 2018-03-20 株式会社半導体エネルギー研究所 発光装置
US11056673B2 (en) * 2016-09-30 2021-07-06 Pioneer Corporation Light emitting device
FR3061404B1 (fr) * 2016-12-27 2022-09-23 Packaging Sip Procede de fabrication collective de modules electroniques hermetiques
WO2020050586A1 (ko) * 2018-09-03 2020-03-12 주식회사 엘지화학 봉지 필름
CN110943066A (zh) * 2018-09-21 2020-03-31 联华电子股份有限公司 具有高电阻晶片的半导体结构及高电阻晶片的接合方法
US10834825B1 (en) * 2019-05-08 2020-11-10 Raytheon Company Hermetic chip on board
US11588137B2 (en) 2019-06-05 2023-02-21 Semiconductor Energy Laboratory Co., Ltd. Functional panel, display device, input/output device, and data processing device
US11659758B2 (en) 2019-07-05 2023-05-23 Semiconductor Energy Laboratory Co., Ltd. Display unit, display module, and electronic device
CN113994494A (zh) 2019-07-12 2022-01-28 株式会社半导体能源研究所 功能面板、显示装置、输入输出装置、数据处理装置
JP2020024425A (ja) * 2019-09-26 2020-02-13 株式会社半導体エネルギー研究所 発光装置
WO2021069999A1 (ja) 2019-10-11 2021-04-15 株式会社半導体エネルギー研究所 機能パネル、表示装置、入出力装置、情報処理装置
KR20210079898A (ko) * 2019-12-20 2021-06-30 엘지디스플레이 주식회사 표시장치
US20220384366A1 (en) * 2021-06-01 2022-12-01 Cree, Inc. Multilayer encapsulation for humidity robustness and related fabrication methods
US20230317634A1 (en) * 2022-04-05 2023-10-05 Applied Materials, Inc. Coatings with diffusion barriers for corrosion and contamination protection

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0332713A4 (en) * 1987-09-29 1989-12-18 Sumitomo Chemical Co DISPERSION TYPE ELECTROLUMINESCENCE ARRANGEMENT.
US5061657A (en) * 1990-07-18 1991-10-29 The United States Of America As Represented By The Secretary Of The Navy Method of making integrated circuit to package electrical connections after encapsulation with an organic polymer
US5315129A (en) * 1990-08-20 1994-05-24 University Of Southern California Organic optoelectronic devices and methods
JP2661804B2 (ja) * 1991-03-13 1997-10-08 シャープ株式会社 白色有機el素子
JPH05182759A (ja) * 1991-12-26 1993-07-23 Pioneer Video Corp 有機el素子
US5482896A (en) * 1993-11-18 1996-01-09 Eastman Kodak Company Light emitting device comprising an organic LED array on an ultra thin substrate and process for forming same
JP3170542B2 (ja) * 1993-12-08 2001-05-28 出光興産株式会社 有機el素子
JPH07169567A (ja) * 1993-12-16 1995-07-04 Idemitsu Kosan Co Ltd 有機el素子
JPH07192867A (ja) * 1993-12-27 1995-07-28 Idemitsu Kosan Co Ltd 有機el素子
US5532550A (en) * 1993-12-30 1996-07-02 Adler; Robert Organic based led display matrix
US5478658A (en) * 1994-05-20 1995-12-26 At&T Corp. Article comprising a microcavity light source
US5424560A (en) * 1994-05-31 1995-06-13 Motorola, Inc. Integrated multicolor organic led array
US5587589A (en) * 1995-03-22 1996-12-24 Motorola Two dimensional organic light emitting diode array for high density information image manifestation apparatus
DE19603746A1 (de) * 1995-10-20 1997-04-24 Bosch Gmbh Robert Elektrolumineszierendes Schichtsystem

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10038012B2 (en) 2002-12-27 2018-07-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof, delamination method, and transferring method
CN111430423A (zh) * 2020-04-02 2020-07-17 京东方科技集团股份有限公司 Oled显示面板及其制作方法、显示装置
CN111430423B (zh) * 2020-04-02 2023-03-28 京东方科技集团股份有限公司 Oled显示面板及其制作方法、显示装置

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