TW447146B - Passivation of organic devices - Google Patents

Passivation of organic devices Download PDF

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Publication number
TW447146B
TW447146B TW085112589A TW85112589A TW447146B TW 447146 B TW447146 B TW 447146B TW 085112589 A TW085112589 A TW 085112589A TW 85112589 A TW85112589 A TW 85112589A TW 447146 B TW447146 B TW 447146B
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Taiwan
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layer
organic
transparent
plastic substrate
organic device
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TW085112589A
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English (en)
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Iii Thomas B Harvey
Song Q Shi
Franky So
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Motorola Inc
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • H10K50/8445Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/958Passivation layer

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Description

A7 4471 4 6 五、發明説明(1 ) --- 參考先前應用 本應用於1995年11月30曰,在美國提出申請,爲專利應 用第 08/565,124 號。 發明範圍 衣發明係關於有機裝置,且更特定言之,係關於在塑膠 基材上經鈍化的有機裝置之形成。 發明背景 目前,利用有機顯示器的裝置,例如聚合物發光裝置' 是有潛力做爲多種有效且直接覲察型式之顧示器,諸如數 罕式手錶、電話、頂部磨光電腦、記綠器、網狀電話、計 斗器及其類似物3有機發光裝置通常组裝簡單、非常容易 而且便宜,不像無機發光裝置。所以也易於獲得多種 及大面積的裝置3 普通有機LED是組裝在玻璃基材上,因爲坡璃對於氧氣 和水蒸氣的低穿透性、水蒸氣和氧氣會導致腐蝕、其他形 式的分解,而且損害有機L E D的可靠性。本發明的構想, 係利用塑膠做爲組成有機L E D的承載基材3傳統的塑膠多 少都易於穿透氧氣和水分。當在塑膠基材上形成有機L E D 時’必須降低並減少氧氣和水分擴散過塑膠基材,在先前 <次明此是會導致有機l e d的分解=再者,l E D的額外有 機組件也容易和氧氣或水有不良的反應。 通常’爲此技藝所熟知的二度空間有機L E D排列,可做 爲顯像裝置的應用,係由許多排列在行和列的有機L e D ( 其中一词或者以上會形成像元)所组成的。在陣列中,每一 本纸張尺度適财SU家轉(CNS ) A4規格|7^72$7公|) ί請先闔讀背面之注意事項再>'寫本頁) 裝. -訂 經濟部中央標準局員工消費合作.杜印袈 447146 A7 B7 五、發明説明 种衣— 「靖先¾-¾背赴之注意事項再坻寫本頁) 個各別的有機LED通常和透光第一電極裝配在—起,有璣 電發光介質沉積在第一電極上,且在有機電發光介質頂端 有一個金屬電極3在形成有機LED時,通常利用—層反庳 性金屬做爲陰極,以便能確保有效電子注射電極和低操作 電壓然而,有機LED在塑膠基材上形成時,不僅是氧氣 和水分容易穿透基材,而且反應性金屬也對氧氣和水分敏 感,特別是在操作的期間,因爲金屬氧化,因而會限制了 裝置的使用期限。通常在排列本身週圍需要氣密封,才能 達成長期的穩定性和壽命。在氣窜封的排列中,有幾種形 式的氣密封可以採用,而其中最普遍的是無機村料·,例/口 金屬及其類似物。所以,當在塑膠基材上形成有機時 ,可以藉由從有機L E D氣密封塑膠基材和氣密封陣列本 ,以阻斷氧氣和水蒸氣的穿透3 另一個問題是發生在有機裝置裝配和鈍化時,有機裝署 的有機層無法耐受高溫(例如通常大於約1〇〇χ:)。在許多^ 況下,即使接近有機層的臨界溫度,特別是在經提昇的^ 度維持相當長期,會分解有機忖料並且減少其可靠性和 或壽命; # 經濟部中央標準局負工消費合作社印製 在有機L E D形成時,有幾種型式的氣密封可以採用,〆 密封障財身’來保護錢裝z免於氧氣和7以氣的侵= ,如同先前敘述,目前採用最普遍的氣密封是由無機材枓 ’ Ή如金屬罐或導電塑料密封器所組成。這些里式的率封 装配昂貴,而且需要大量人力裝配s此外,金屬罐大且重 ,因此嚴重限制了有機裝置的應用。 ___-5- 本紙展尺度適用中國國家插卑((^)人4姑^^(210乂297公釐) 經濟部中央榡準局員工消費合作社印製 A7 B7 五、發明説明(3 ) —種較新的氣密封有機裝置方法,係利用無機材料,例 如陶瓷、電介質或金屬外塗覆在其上,以便在有機裝置的 遇遭旎夠氣密封。然而,有機裝置無法耐受高溫,可是這 些材料的沉積通常需要高溫。因此,通常要利用p£CVD方 法、'積陶走、電介質或金屬材料,方能符合低溫標準3 泛種密封方法的主要問題是,在PEc VD沉積期間 < 很可能 會輻射傷a 因此’極想要提出一種非常便宜和簡便的方法,在塑膠 基材上形成有機裝置,在其中塑膠基和周遭環境間,有 一個第一氣密封,可以保護塑醪基材免於氧氣、水分和其 他大氣成份的穿透,因此而損害有機LED,同時在有機裝 置陣列周遭有第二氣密封,可以保護該陣列免於受相似的 大氣元素損害。 本發明的目的係提供一種新穎且改良的方法,外塗覆塑 膠基以便能阻止氧氣和水分穿透。 本發明另一個目的,係提供一種新穎且改良的方法,在 塑膠基材上形成鈍化有機裝置3 本發明尚有一値目的,係提供一種新顆並且改良的方法 ,可以相當簡便而且便宜地完成,於塑膠基材上形成鈍化 有機裝置。 發明摘述 至少部价解決以上問題及其他問題,在承載的透明塑膠 基材上形成有機裝置的方法,可以實現以上的目的和其他 目的,孩方法包括沉積多層外塗層在塑膠基材上的步驟3 -_____-6 - 本紙張尺度賴巾gg家標準(CMS ) A4現格(210X297公釐)* "— --- (請先"讀背如之注意事項再填寫本頁) -裝 -=& 44714 6 A7 B7 經濟部中央橾隼局員工消費合作社印製 五、發明説明(4 、固透”合物薄膜和透明無機材料(例如—氧切、氧化 夕-氧化石夕或氮化碎)的薄又替看组成多層外塗屢、 明無機材料係沉積在至少-個塑膠基忖平面上。多層外塗 層係沉積在至少一個塑膠基材的平面上,而其上形成有機 led 3或者,多層外塗層係沉積在塑膠基材的所在平面上 ’因此’將塑膠基材封人透明無機材料和聚合物薄膜的交 替層内部,接著再於其上形成有機LED。此多層外塗層係 用以減少並消除氧氣和水分擴散诵過裀膠基材,此擴散會 損傷在其上所形成·之有機led。: · 在較佳具體實施例中,聚合物薄膜層和無機電介質材料 層’每一個依靠不同機制來保護,免於氧氣和水分會穿透 過塑膠基材3聚合物薄膜層是用來改良多層外塗層阻隔性 成的方式,並且幫助減緩水分和氧氣擴散過塑膠基材。透 明聚合物係選自包括經氟化的聚合物、帕里綸(parykne )和 赛克洛汀(cyclotenes)較佳。透明介電層係做爲物理阻隔水 分和氧氣擴教過塑膠基材。以一氧化矽、氧化碎、二氧化 秒或氮化矽的透明介電層較佳、聚合薄膜層和透明介電層 的摻合物’可以阻隔氧氣和水分,因此可以保護有機L E D ,免於受損傷3透明聚合薄膜層和透明介電層摻合形成多 層氣密封,以密封本發明的塑膠基材s爲了保護塑膠基材 見於水分和氩氣的渗-透」體實皮例、至少由二層_1_^ 外t層組成,包含聚合薄獏層和透明介電層的交替層。咸 該明瞭,利用少於二層之多層外塗層,或者包含多層外塗 層之任何摻合物,揭示其結果較不合I。 本紙張尺度適用中國國家樣準(CNS ) A4規格(210X297公釐) 扯衣------1T------^ {-靖先閱磧背釘之注意事項再填寫本頁) 44” 46 A-7 五、發明説明(5 經濟部中央標準局貝工消費合作社印製 圖形簡诚 參考圖形:_ 有=據本發明’在經外塗覆的塑勝基材上形成泛 有機LED陣列的簡化截面圖; 説覆的塑勝基材之放大簡化截面圖,進-步地 層外塗層:#明在最上面的平面上’塑膠基材的交替多 、圖4和。係是根據本發明’在經外塗覆的透明塑膠基村上 (有機L E D陣列的簡化截面圖#説明有機裝置的氣密封, 有很多層沉積在有機裝置上: , 圖6和7係疋根據本發明,在經外塗覆的透明塑膠基材上 元成有機L E D陣列之簡化戴面圖,進—步說明有金屬罐之 有機裝置的氣密封:圖8和9係是根據本發明,在經外塗覆的塑膠基材上形成 之有機LED陣列的簡化截面圖,説明有球頂環氧封裝物的 有機裝置之氣密封:和 圖1 〇和1 1係是根據本發明’在經外塗覆的透明塑膠基材 上形成的有機L E D陣列之簡化截面圖,進—步説明有聚合 物層壓金屬箔層的有機裝置之氣密封。 較佳具體實施例之說明 咸該瞭解圖形的本性,因爲各別層太薄、以致於無法說 明比例,或者按照一般比例3特別參考圖形,在其中類似 符號代表所有圖形中類似的部份,圖I和2是有機L E D陣列 簡化戴面圖,說明根據本發明在一個經外塗復的透明塑膠 ^1 (請先閲請背面之注^h項再填寫本頁 }
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11T -8 - 本紙張尺度逋用中國國家標隼(CNS ) Μ規格(210X297公釐) 4471^6 A7 B7 五、發明説明(6 ) 基材上’有機LED10的形成。 經濟部中央橾準局負工消费合作社印製 特定參考圖1,説明基材丨1,在本特別具體實施例中, 該基材係形成自一個視需要而選定之清潔塑膠。有機發光 裝置(L E D )的像元之陣列丨2位在基材1 1之上,通常將陣列 1 2组裝在多層外塗層1 6 (目前將要討論)上’而1 6則沉積在 基材1 1的頂平面上’可以任何方法组裝有機L e d。一個特 定實例,陣列丨2包含導電材料的迗明層1 3,例如氧化銦錫 U T 〇 )或其類似物,在其上有活性有糙層}^,例如有機電 發光層’及金屬層形成之陰椏Γ5/,該金屬·層包括—薄層的 低$此冬金屬。有機層i 4通常包括孔道傳輸層、發射層和 電子傳輸層。有機L E D的陣列1 2,及特別是反應性金屬層 ’對於周遭大氣的氧氣和水分很敏感,因此,必須經鈍化 才能具有可靠性和合理的使用壽命s 如同之前所説明的,陣列丨2是形成在塑膠基材丨丨上3由 於原^ Y尤已經ί參透塑膠的氧氣和水蒸氣,所以在基材1 1上 必須沉積氣封的多層外塗層丨6,以便能保護於其上所形成 之陣列1 2 a爲了降低並且減少擴散過塑膠基材η的氧氣和 水分’多層外塗層! 6要包含至少二交替層的聚合笔 透明介電材料1 8丄isuHL在圖3所説明),沉積在基材11上。 堆置的多層外塗層1 6必須位在能夠阻止氧氣或水分穿透 塑膠基材丨1的位置’否則其中會損傷有機L e D »因此,多 層外塗層1 6可以位於基忖〖丨的最上面或較低的表面’或者 ’因此可位於基材i i的所有表面上,因此多層外塗層1 6將 基材1 1封在其中3如同在圖1所説明之,多層外塗層係沉 _-9- 本紙铁尺度適用中國國家揉準(CMS ) A4規格(210X297公着) "" " ~ A47146 A7 — --__一 一 B7_ 五、發明説明(7 ) "~~ 一 積在基材11的最上面的表平面上,位於基材"和陣列12 之導電材料透明層13之間。另一個具體實施例揭示外塗看 16是沉積在塑膠基材Η的較低表平面上,而陣和則直 接形成在基材U的最上面之表面上(沒有顯示),或者如圖 2所浞明ι ’多層外塗層^ 6,沉積在包含有基材η的許, 表平面上如此才忐元全莕封基材η s組成有機LEDi〇的 陣列12時,附加多層外塗層16,可以使得有機ledi〇| 塑膠基材11上形成a 經濟部中央橾準局員工消费合作社印掣 ---------^------ίτ (請先閱讀背面之注意事項再填窍本頁) 如同之則所敘述並在圖3中所:說明之,多層外塗層1 6是 由透明聚合薄模1 7和透明介電材料層i 8的交替層所组成。 車父佳具體實施例包含至少兩層摻合之聚合物薄膜丨7和介電 材料層I 8。咸該明瞭,本揭示應事先討論交替層次序相反 的情況=在應用的時候,聚合物薄雎層1 7是改良多層外泛 層的阻隔特性,因此減壤也_分权氳處邊散過塑勝基材U。 可以用來組成聚合物薄膜層1 7的聚合物,係選自包括強靭 的聚合物’例如經氟化的聚合物、帕里綸和赛克洛汀3可 以經由浸潰基材]1的方法、旋轉塗佈的方法、濺鍍方法、 或者以蒸發塗佈基材11、來塗佈上聚合薄膜層17 3介電材 料層1 8係作爲物理阻隔,以阻斷水分和氧氣擴—散 ’由於其會損傷有機LED裝置i〇a以一氧化矽(SiO)、氧 化矽(SiOx )、二氧化矽(s丨〇 2)或者氮化矽(s丨3 n 4 )其中一 個组成介電材料層1 8較佳,並且利用熱蒸發、賤鍍或 PEC VD方法’和聚合物薄獏層丨7,以間隔交替層的方式, 塗佈在基材1 I上。 ___- 10- 本紙張尺度逋用中國國家標率(CNS ) A4規格(210X297公廣) 447146 A7 B7 五、發明説明(8 ) 根據本發明,有機L E D裝置2 0的第一個具體實施例中, 有多層沉積在有機LED上组成之氣密封,並且再進一步組 成在多層外塗覆的塑膠基材11上,在圖4和5中說明之。陣 列1 2是組成在經沉積的塑勝基材1 1上,其上如之前說明之 ,係由聚合物薄膜層1 7和介電材料層1 8之多層交替層组成 多層外塗層1 6。如在圖4説明之,多層外塗層1 6係沉積在 基材II之最上層表面上》如圖5說明之,另一個具體實施 例爲多層外塗層1 6沉積在基:村1 1之所有平面上,因此可以 將基材1 1封入内部,而能提供更好的保護基材1 1。 在组成裝置2 0之陣列1 2的氣密封時,陣列I 2和氣-密封系 統2 2 —起經外塗覆’包含緩衝系統,該系統通常至少要和 陣列1 2的一些特徵配合,成一個密閉系統3在本特殊辱密 ΐί多統2_2中’由許多層組成’包括有機材料的緩衝第一層 2 4 ’通常該材料係作爲保護陣列1 2。緩衝層2 4可爲有機 聚合物’或有機金屬複合物。典型之有機聚合物,方便採 用的是帕里綸及其類似物。 經濟部中央榇準局貝工消費合作.社印 此等聚合物(例如帕里綸及其類似物)的熱膨脹係數(C Τ Ε ) 低、接近陣列1 2的C T E,如此在熱循環期間,不會產生壓 力或壓力很小。同時,這些聚合物的介電常數低,而且對 氧氣和水分的可透性低。 在實例中,併入有機金屬複合物做爲緩衝層24,是一層 三(8 -羥基唛啉酸)鋁(a 1 q )或其類似物置積在陣列上面, 而非有機聚合物.,因爲許多有機裝置利用A 1 q在活性層中( 做爲放射器和/或電子傳遞材料),所以衣材料係唯一可和 . -11 ** 本紙張尺度適用中國g家揉隼(CNS )从说格(210X297公釐) 經濟部中央標準局員工消費合作社印装 A7 五、發明説明(9 ) - 陣列12相配合,且也容易將緩衝潛24加入陣列12中,而 不需要額外的材料和儀器s熟請本技藝者咸該明瞭,其他 可用於有機裝置特殊陣列的活性層材料,也可以用於緩衝 層2 4 » •利用熱係數相合層26來覆蓋或塗佈緩衝層24,該層26在 '爰衝系統中爲第—層。接著,接低穿透性的無機層2 8置堆 過熱係數相合層2 6,以外塗復熱係數相合層2 6。在下面將 列出一些典型的熱係數相合層2 6和無機層2 8的實例。可以 ’ J用一氧化矽(s 1 〇 2 )作爲熱係:數相合層2.6,而以氮化矽 (Si^4)作爲禅機層28。在一個有些不同的具體實施例中 ,低逸出功金屬,例如鋰(Li)或鎂(Mg)、做爲熱係數相合 層2 6,而且進一步地做爲收集材料,以吸收一些在無機層 中經陷落的氣體及其類似者。在本實例中,利用穩定金屬 如鋁(AI)或銦(In)做爲無機層28,和經定位的電介質(沒 有顯示出來)連接在一起,如此方能和無機層2 8分開,該 無機層2 8由穩(安)定的金屬组成,因此可防止陣列丨2短路 。在本實例中,無機層2 8的穿透性低,如此才能完全封入 、或者氣舍封陣列1 2。要得到利用多層.氣密封陣列1 2的資 訊’可參閱同在申請中之美_專利應用,標題有機裝置之 鈍化·,’在1995年5月1日提出申請,編號第08/43 1,996號, 且讓與給相同的讓受人。 杈據本發明’有機L E D裝置3 0的第二個具體.實絶例,在 圖6和7中説明,·有一個由金屬罐32將有機LED封入其中的 氣密封,並且進一步在多層經外塗覆的塑膠基材u上形成 -12- 本紙張尺度適用中國國家標準(CMS ) A4規格(210X297公釐Ί '~~- C锜先閱讀背妒之注意事項鼻4寫本頁) 裝·
*1T 447146 A7 B7 五、發明説明(10 經濟部中央標準局舅工消費合作社印製 α説明之’陣列12形成在塑膠基材11之上’而之前已說 明塑膠基材1 i上已有多層外塗層丨6沉積於其上。圖6所說 月之多層外塗層1 6沉積在基材丨j的最上表面上3圖7所 說明;,係另—個具體實施例,多層外塗層1 6將基材1丨封 入其内部’在形成陣列丨2的氣密封時,如同本技藝所熟知 者’金屬罐3 2將陣列1 2密封住,可以保護有機L E D装置 免受大氣元素之傷害3 很據本發明’有機L E D裝1的第三和第四具體實施例, 分別標示爲4 〇和5 〇,在有機[eP沉積許多層,而形成氣密 封’再進一步地组成在經外塗覆的塑膠基材丨丨上,圖8 q 1 所敘述的。延化有機L e D之此另一個方法’同在申請中的 美國專利應用,標題,,有機装ί之鈍化’,中揭示,因此同一 曰期申請’並且讓與给相同的受讓人。如圖8 1中之説明 ’陣列1 2在基村1 i上形成,該基材1 1已有多層外塗層i 6 沉積於其上。如圖8和1 0之説明’多層外塗層1 6置堆在基 材1 1的最上層表面上(如前面之説明)。如圖9和1 1之説明 ’另一悃具體實施例,有多層外塗層16將基材π封入其内 部(如之前的說明)。在形成圖形8 - 1 1的陣列i 2之氣密封時 ,利用一層穩定金屬5 4 ’例如銦(I η)及其類似物,先覆蓋 组成陣列1 2的各別像元的頂端,或先使其經外塗復。衣覆 Α頂端或外塗層係作爲起始保護塗層,以保護組成陣列1 2 的 '各別像元= 接著,通常利+用如本發明先前的具體實施例中説明的相 同分層技術,外塗層已經穩定金屬層5 4覆蓋頂端的陣列1 2 -13-_ 本紙乐尺度適用中國國家標準(CNS ) A4規格(2丨〇><四7公変) (請先聞讀背^之注意京.項再填寫本頁〕 •裴
*1T i Λ: A? B7 11 五、發明説明( ,該先前具體實施例如圖4和5中> 7 T疋私明5在陣列i 2上先置 積第一緩衝系統5 6,接著再—哉導任私〜人 熟導係數相合層5δ =蚨後, 熱導係數相合層5 S上置積低穿透性益 … 砭丨王棵璣層60 ,外塗覆過埶 導係數相合層58。 復χ_..、 最後利用一層環氧樹脂封裝物4 7, „ . 衣仍42或一層聚合物層合金 屬箔5 2來密对陣列1 2,如圖8知Q以主-[ . 和9所表不的是經鈍化有機 裝置的較佳具體實抱例’在其中利吐Tg炉w 、甲利用球頂環氧樹脂封裝物 42密封有機LED陣列12。在另—個具體實施例中,如圖 1〇和Η所説明之,利用聚合物層合金屬搭”密封有機 L E D陣列1 2。 雖然已經展示並且説明本發明之特殊具體實袍例’,熟諳 此藝者就會進一步修改和改良。希望咸明瞭,本發明並2 有被限制於特殊形式中,並且在附上的申請專利範圍中, 能涵蓋不背離本發明之精神和範圍的所有修改。 ---------^------1Τ <请先Μ-讀背d&.之注意事項再填寫本買) 經濟部中央標準局負工消费合作社印製 -14 張尺度適用中囷國家揉孪(CNS ) Α4規格(210X297公釐)

Claims (2)

  1. 447146 A8 B农 C8 D8 經濟部中央標準局員工消費合作社印製 七、申請專利範圍 1 _ 一種化有機装置的方法,其包括以下步戰: 於包含許多平表面之透明塑膠承載基材上,以至少— 個透明聚合物薄獏層和至少一個透明介電材料層的交扶 層外塗覆: 在經外塗覆的透明塑膠承載基材上提供有機裝置,界 定許多像元:而且 Φ封在透明塑膝承載基材上的有機裝置3 2. —種鈍化有機裝置的方法,其包括以下步驟: 於包含許多平表面之透明塑膠基材上,以包含至少— 種氟化聚合物、帕里綸(parylenes)或赛克洛汀 (cyclotenes )之聚合物和透明介電材料,包含至少—種— 氡化矽、氧化矽、二氧化矽或氮化矽之透明介電材料之 交替層進行外塗覆: 在經外塗覆的塑膠承載基材上提供有機LED陣列,界 定許多像元··且 利用至少一種金屬罐封裝物、敷金屬的塑膠封裝物' 環氧樹脂封裝物或聚合物層合金屬洛,密封在塑膠基材 上提供的有機裝置3 3· 一種經鈍化的有機裝置,其包含: 一個承載用透明塑膠基材,已利用至少一個透明聚合 物溥联層和至少一個介電材料層的交替層外塗復: -在孩承載塑膠基材上已形成一個有機裝置,界定許多 像元:而且 . 一偶密封層經定位在密封該有機裝置之位置上。 -15- 本紙張尺度ϋ财關家(.2!())< 297公蹇) ,t.------ΐτ------球 (請先閲讀背*·之注意事項再填寫本頁)
  2. 7 - A AS ,α . B8 CS DS 、申請專利範圍 . 4.—種經鈍化的有機裝置,其包含: 一個承載透明塑膠基材,已利用至少一個聚合物薄膜 層和至少一個介電材料層的交替層外塗覆,該聚合物薄 膜層包含至少一種氟化聚合物、帕里綸或赛克洛汀,該 介電材料層包含至少一種一氧化矽、氧化矽、二氧化矽 或氣化珍: 一個已承載的塑膠基材上形成之有機裝置,界定許多 像元:和 一個密封層經定位在密封該.有機裝置之位置上> ^11------妹—.. * _ (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消费合作社印製 -16 - 本纸浪尺度適用中國舀家標準(CNS ) A4規格(210X297公釐)
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