KR870009461A - 내열 플라스탁 받도체 장치 - Google Patents
내열 플라스탁 받도체 장치 Download PDFInfo
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- KR870009461A KR870009461A KR870002755A KR870002755A KR870009461A KR 870009461 A KR870009461 A KR 870009461A KR 870002755 A KR870002755 A KR 870002755A KR 870002755 A KR870002755 A KR 870002755A KR 870009461 A KR870009461 A KR 870009461A
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- semiconductor device
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1a도는 본 발명 실시예의 반도체 장치를 표시한 저면도.
제1b도는 제1a도의 A―A선을 통과한 단면도.
제2a도는 통풍구의 플래시층을 표시한 단면도.
제2b도는 플래시의 최대 허용 두께를 표시한 특성도.
제3도는 선행기술의 반도체 장치의 알부를 표시한 상면도.
Claims (10)
- 첫 번째 표면에서 접촉을 갖는 집적회로칩 두 번째 표면이 아일랜드의 첫 번째 표면에 면하는 집적회로칩이 장치된 아일랜드.아일랜드의 두 번째 표면위에 형성된 접착력이 낮은 층외부도선 집적회로칩 위의 접촉과 외부 도선의 내단을 연결하기 위한 접합철사 집적회로 아일랜드 접착력이 낮은 층 접합철사와 외부도선의 안쪽 부분을 캡칩으로 보호하기 위하여 접착력이 낮은 층 부근까지 이르는 통풍구가 마련된 몰드 수지의 캐키지 몰드의 수지에 접착력이 낮거나 전혀 없는 접착력이 낮은 층으로 구성된 내열성 플라스틱 반도체 장치.
- 제1항에 있어서, 몰드 수지가 에폭시 수지로 구성된 내열의 플라스틱 반도체 장치.
- 제1항에 있어서, 접착력이 낮은 층이 Au, Ni, Cr, Co 불화물 수지 또는 실리콘 수지로 형성된 내열 플라스틱 반도체 장치.
- 제1항에 있어서, 집적회로칩의 첫 번째 표면이 적어도 몰드 수지로부터 부식성 불순 이온의 침투를 방지할 수 있는 칩 코오트로 코팅된 내열 플라스틱 반도체 장치.
- 제4항에 있어서, 칩 코오트가 실리콘 수지 또는 폴리이마이드 수지로 형성된 내열 플라스틱 반도체 장치.
- 제4항에 있어서, 칩 코오트가 집적회로칩 위의 접촉과 접촉에 접합된 접합철사의 부분들을 커버하기 위하여 형성된 내열 플라스틱 반도체 장치.
- 제1항에 있어서, 통풍구가 아일랜드에 대하여 수직으로 뻗은 내열 플라스틱 반도체 장치.
- 제1항에 있어서, 통풍구가 접착력이 낮은 층을 커버하는 몰드 수지의 알부분에 형성된 내열 플라스틱 반도체 장치.
- 제1항에 있어서, 통풍구 밑바닥에 남아 있는 몰드 수지의 두께가 작기 때문에 밑바닥에 남아 있는 몰드 수지가 패키지에 물이 침투한 후 열을 가하는 동안 몰드 수지의 여타 부분에 앞서 부서지는 내열 플라스틱 반도체 장치.
- 제1항에 있어서, 외부 도선과 아일랜드가 도선프레임으로 형성된 내열 플라스틱 반도체 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP6714386 | 1986-03-27 | ||
JP67143 | 1986-03-27 |
Publications (2)
Publication Number | Publication Date |
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KR870009461A true KR870009461A (ko) | 1987-10-26 |
KR960001604B1 KR960001604B1 (en) | 1996-02-02 |
Family
ID=13336387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR87002755A KR960001604B1 (en) | 1986-03-27 | 1987-03-25 | Semiconductor device with an encapsulation package |
Country Status (6)
Country | Link |
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US (1) | US4777520A (ko) |
EP (1) | EP0239315B1 (ko) |
JP (1) | JPS6312157A (ko) |
KR (1) | KR960001604B1 (ko) |
CN (1) | CN1005945B (ko) |
DE (1) | DE3770847D1 (ko) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS61230344A (ja) * | 1985-04-05 | 1986-10-14 | Toray Silicone Co Ltd | 樹脂封止型半導体装置 |
IT1201836B (it) * | 1986-07-17 | 1989-02-02 | Sgs Microelettronica Spa | Dispositivo a semiconduttore montato in un contenitore segmentato altamente flessibile e fornite di dissipatore termico |
US5208467A (en) * | 1988-07-28 | 1993-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a film-covered packaged component |
US4951400A (en) * | 1988-12-27 | 1990-08-28 | Ncr Corporation | Method for processing plastic packaged electronic devices |
JPH03116857A (ja) * | 1989-09-29 | 1991-05-17 | Mitsui Petrochem Ind Ltd | 発光または受光装置 |
US5216283A (en) * | 1990-05-03 | 1993-06-01 | Motorola, Inc. | Semiconductor device having an insertable heat sink and method for mounting the same |
EP0566872A3 (en) * | 1992-04-21 | 1994-05-11 | Motorola Inc | A thermally enhanced semiconductor device and method for making the same |
JP2747634B2 (ja) * | 1992-10-09 | 1998-05-06 | ローム株式会社 | 面実装型ダイオード |
US5612576A (en) * | 1992-10-13 | 1997-03-18 | Motorola | Self-opening vent hole in an overmolded semiconductor device |
JPH06209054A (ja) * | 1993-01-08 | 1994-07-26 | Mitsubishi Electric Corp | 半導体装置 |
US5557144A (en) * | 1993-01-29 | 1996-09-17 | Anadigics, Inc. | Plastic packages for microwave frequency applications |
US5958100A (en) * | 1993-06-03 | 1999-09-28 | Micron Technology, Inc. | Process of making a glass semiconductor package |
US5686698A (en) * | 1994-06-30 | 1997-11-11 | Motorola, Inc. | Package for electrical components having a molded structure with a port extending into the molded structure |
JP3213794B2 (ja) * | 1995-07-31 | 2001-10-02 | ローム株式会社 | 面実装型電子部品およびその製造方法 |
JP3352360B2 (ja) * | 1996-07-19 | 2002-12-03 | シャープ株式会社 | 電力制御素子 |
KR19980030032A (ko) * | 1996-10-29 | 1998-07-25 | 황인길 | 반도체 패키지 |
KR20010009350A (ko) * | 1999-07-09 | 2001-02-05 | 윤종용 | 기판이 없는 칩 스케일 패키지 및 그 제조방법 |
US6589820B1 (en) | 2000-06-16 | 2003-07-08 | Micron Technology, Inc. | Method and apparatus for packaging a microelectronic die |
IT1318257B1 (it) * | 2000-07-27 | 2003-07-28 | St Microelectronics Srl | Lead-frame per dispositivi a semiconduttore. |
US6483044B1 (en) | 2000-08-23 | 2002-11-19 | Micron Technology, Inc. | Interconnecting substrates for electrical coupling of microelectronic components |
US6979595B1 (en) * | 2000-08-24 | 2005-12-27 | Micron Technology, Inc. | Packaged microelectronic devices with pressure release elements and methods for manufacturing and using such packaged microelectronic devices |
US6838760B1 (en) | 2000-08-28 | 2005-01-04 | Micron Technology, Inc. | Packaged microelectronic devices with interconnecting units |
JP3975181B2 (ja) * | 2003-06-11 | 2007-09-12 | 三菱電機株式会社 | 電力用半導体装置 |
US7833456B2 (en) | 2007-02-23 | 2010-11-16 | Micron Technology, Inc. | Systems and methods for compressing an encapsulant adjacent a semiconductor workpiece |
DE102007019096B4 (de) * | 2007-04-23 | 2015-03-12 | Continental Automotive Gmbh | Elektronikgehäuse |
JP2009035215A (ja) * | 2007-08-03 | 2009-02-19 | Mazda Motor Corp | 自動車のバッテリー取付構造 |
EP2765410B1 (en) * | 2014-06-06 | 2023-02-22 | Sensirion AG | Gas sensor package |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54111768A (en) * | 1978-02-22 | 1979-09-01 | Hitachi Ltd | Semiconductor device of resin sealing type |
FR2488445A1 (fr) * | 1980-08-06 | 1982-02-12 | Efcis | Boitier plastique pour circuits integres |
JPS5922349A (ja) * | 1982-07-29 | 1984-02-04 | Fujitsu Ltd | 半導体装置 |
JPS5987840A (ja) * | 1982-11-10 | 1984-05-21 | Toray Silicone Co Ltd | 半導体装置 |
JPS60208847A (ja) * | 1984-04-02 | 1985-10-21 | Oki Electric Ind Co Ltd | 表面実装型icに内在する水分の排出方法 |
JPS6123348A (ja) * | 1984-07-12 | 1986-01-31 | Nec Corp | 樹脂封止型半導体装置 |
JPS6178150A (ja) * | 1984-09-25 | 1986-04-21 | Sumitomo Electric Ind Ltd | 樹脂封止型半導体装置用リ−ドフレ−ム |
-
1987
- 1987-03-11 US US07/024,795 patent/US4777520A/en not_active Expired - Lifetime
- 1987-03-18 DE DE8787302325T patent/DE3770847D1/de not_active Expired - Fee Related
- 1987-03-18 EP EP87302325A patent/EP0239315B1/en not_active Expired - Lifetime
- 1987-03-24 JP JP62067935A patent/JPS6312157A/ja active Pending
- 1987-03-25 KR KR87002755A patent/KR960001604B1/ko not_active IP Right Cessation
- 1987-03-27 CN CN87102401.2A patent/CN1005945B/zh not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0239315B1 (en) | 1991-06-19 |
KR960001604B1 (en) | 1996-02-02 |
CN87102401A (zh) | 1987-10-07 |
JPS6312157A (ja) | 1988-01-19 |
DE3770847D1 (de) | 1991-07-25 |
US4777520A (en) | 1988-10-11 |
EP0239315A1 (en) | 1987-09-30 |
CN1005945B (zh) | 1989-11-29 |
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