KR960002480A - 반도체 장치의 배선 구조 및 그 형성방법 - Google Patents

반도체 장치의 배선 구조 및 그 형성방법 Download PDF

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KR960002480A
KR960002480A KR1019940013121A KR19940013121A KR960002480A KR 960002480 A KR960002480 A KR 960002480A KR 1019940013121 A KR1019940013121 A KR 1019940013121A KR 19940013121 A KR19940013121 A KR 19940013121A KR 960002480 A KR960002480 A KR 960002480A
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forming
diffusion barrier
layer
opening
semiconductor device
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KR1019940013121A
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KR0144956B1 (ko
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이상인
하선호
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김광호
삼성전자 주식회사
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Priority to KR1019940013121A priority Critical patent/KR0144956B1/ko
Priority to GB9511567A priority patent/GB2290166B/en
Priority to JP16832995A priority patent/JP3963494B2/ja
Priority to DE19521150A priority patent/DE19521150B4/de
Priority to CN95107381A priority patent/CN1061782C/zh
Publication of KR960002480A publication Critical patent/KR960002480A/ko
Priority to US08/873,869 priority patent/US5998870A/en
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    • H—ELECTRICITY
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76862—Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76865—Selective removal of parts of the layer
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

콘택홀(Contact hole)이나 비아홀(Via hole)과 같은 개구부를 매몰하는 반도체 장치의 배선구조 및 그 형성방법에 관하여 개시한다. 본 발명은 반도체 기판, 상기 반도체 기판 상에 형성되고, 그 내부에 형성된 개구부를 포함하는 절연층, 스퍼터 식각에 의해, 상기 개구부의 양측벽에 평활한 표면을 갖는 확산 방지막, 및 상기 확산 방지막상에 형성되어 있는 금속층을 포함한다. 상기 확산방지막은 내화금속 또는 내화금속 화합물로 구성하며, 본 발명에 의하면, 매끈한 확산방지막의 측벽에 형성되는 금속층이 알루미늄 원자의 초기 증착특성이 양호함으로 인하여, 알루미늄의 단차도포성이 양호하고, 균일하고 연속적인 막으로 증착된다. 따라서, 고단차의 접촉구를 보이드 없이 효과적으로 매몰할 수 있어, 소자의 신뢰성을 향상시킬 수 있다.

Description

반도체 장치의 배선 구조 및 그 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3A도는 본 발명에 의한 반도체 장치의 배선층의 구조를 설명하기 위한 도면이고,
제4A도 내지 제4D도는 본 발명에 따른 반도체 장치의 배선층 형성방법의 제1실시예를 나타내는 단면도들이다.

Claims (20)

  1. 반도체 기판; 상기 반도체 기판 상에 형성되고, 그 내부에 형성된 개구부를 포함하는 절연층; 스퍼터 식각에 의해, 상기 개구부의 양측벽에 평활한 표면을 갖는 확산 방지막; 및 상기 확산 방지막상에 형성되어 있는 금속층을 포함하는 반도체 장치의 배선구조.
  2. 제1항에 있어서, 상기 확산방지막은 내화금속 또는 내화금속 화합물로 구성된 것을 특징으로 하는 반도체 장치의 배선구조.
  3. 제2항에 있어서, 상기 내화 금속은 Ti로, 내화금속 화합물은 TiN으로 이루어진 것을 특징으로 하는 반도체 장치의 배선구조.
  4. 제1항에 있어서, 상기 개구부는 상기 반도체 기판의 불순물 확산영역을 노출시키는 콘택홀 또는 상기 반도체 기판 상에 형성된 하부도전층을 노출하는 비아홀인 것을 특징으로 하는 반도체 장치의 배선구조.
  5. 반도체 기판; 상기 반도체기판 상에 형성되고, 그 내부에 형성된 개구부를 포함하는 절연층; 스퍼터 식각에 의해, 상기 개구부의 양측벽에 평활한 표면을 갖는 확산 방지막; 및 상기 확산 방지막이 형성되어 있는 상기 개구부상에 매몰된 금속층을 포함하는 것을 특징으로 하는 반도체 장치의 배선구조.
  6. 반도체 기판상에 절연층을 형성하는 단계; 상기 절연층에 개구부를 형성하는 단계; 상기 절연층, 상기 개구부네 노출된 기판 및 상기 개구부의 측벽에 확산방지막을 형성하는 단계; 상기 개구부의 양측벽에 형성된 확산방지막의 표면을 스퍼터 식각하는 단계; 및 상기 식각된 확산 방지막상에 금속층을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 장치의 배선층 형성방법.
  7. 제6항에 있어서, 상기 확산 방지막의 표면을 평활하게 변형시키는 위하여 플라즈마를 이용하는 것을 특징으로 하는 반도체 장치의 배선층 형성방법.
  8. 제7항에 있어서, 상기 플라즈마는 불활성가스을 이용한 ECR 플라즈마, RF 플라즈마 또는 Magnetron-enhanced 플라즈마 장치를 이용하여 형성하는 것을 특징으로 하는 반도체 장치의 배선층 형성방법.
  9. 제8항에 있어서, 상기 불활성가스에 수소를 첨가하여 플라즈마처리 효과를 증대시키는 것을 특징으로 하는 반도체 장치의 배선층 형성방법.
  10. 제6항에 있어서, 상기 금속층을 CVD방벙으로 형성하는 것을 특징으로 하는 반도체 장치의 배선층 형성방법.
  11. 제6항에 있어서, 상기 확산방지막을 형성하는 단계후에 열처리하는 단계를 더 포함하는 것을 특징으로 하는 반도체 장치의 배선층 형성방법.
  12. 제6항에 있어서, 상기 금속층을 형성하는 단계후에 열처리하여 상기 개구부를 매몰시키는 단계를 더 포함하는 것을 특징으로 하는 반도체 장치의 배선층 형성방법.
  13. 제12항에 있어서, 상기 개구부를 매몰시키는 단계후에 제2의 금속층을 더 형성하는 것을 특징으로 하는 것을 특징으로 반도체 장치의 배선층 형성방법.
  14. 제6항에 있어서, 상기 금속층을 제1의 온도에서 1차 증착한 후, 제2의 온도에서 제2차 증착시키는 것을 특징으로 하는 반도체 장치의 배선층 형성방법.
  15. 제14항에 있어서, 상기 제1의 온도는 상기 제2의 온도보다 낮은 것을 특징으로 하는 반도체 장치의 배선층 형성방법.
  16. 반도체 기판상에 절연층을 형성하는 단계; 상기 절연층에 개구부를 형성하는 단계; 상기 절연층, 상기 개구부에 노출된 기판 및 상기 개구부의 측벽에 제1확산방지막을 형성하는 단계; 상기 개구부의 양측벽에 형성된 제1확산방지막의 표면을 스퍼터 식각하는 단계; 상기 식각된 제1확산 방지막상에 제2확산방지막을 형성하는 단계; 상기 제2확산방지막이 형성된 기판의 전면에 금속층을 형성하는 단계; 및 상기 금속층을 열처리하여 상기 개구부를 매몰하는 단계를 포함하는 것을 특징으로 하는 반도체 장치의 배선층 형성방법.
  17. 제16항에 있어서, 상기 제2확산방지막을 형성하는 단계후에 연속적으로 진공을 깨지 않고 상기 금속층을 형성하는 것을 특징으로 하는 반도체 장치의 배선층 형성방법.
  18. 제16항에 있어서, 상기 금속층을 형성하는 단계후에 제2의 금속층을 더 형성하는 것을 특징으로 하는 반도체 장치의 배선층 형성방법.
  19. 제16항에 있어서, 상기 제2확산방지막을 형성하는 단계후에 열처리를 실시하는 단계를 더 포함하는 것을 특징으로 하는 반도체 장치의 배선층 형성방법.
  20. 반도체 기판상에 절연층을 형성하는 단계; 상기 절연층에 개구부를 형성하는 단계; 상기 절연층, 상기 개구부에 노출된 기판 및 상기 개구부의 측벽에 제1확산방지막을 형성하는 단계; 상기 개구부의 양측벽에 형성된 제1확산방지막의 표면을 스퍼터 식각하는 단계; 상기 식각된 제1확산 방지막상에 제2확산방지막을 형성하는 단계; 및 상기 제2확산방지막이 형성된 기판의 전면에 고온 스퍼터링하여 상기 개구부를 매몰하는 단계를 포함하는 것을 특징으로 하는 반도체 장치의 배선층 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940013121A 1994-06-10 1994-06-10 반도체 장치의 배선 구조 및 그 형성방법 KR0144956B1 (ko)

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GB9511567A GB2290166B (en) 1994-06-10 1995-06-07 Manufacturing method for a wiring structure of a semiconductor device
JP16832995A JP3963494B2 (ja) 1994-06-10 1995-06-09 半導体装置およびその形成方法
DE19521150A DE19521150B4 (de) 1994-06-10 1995-06-09 Verdrahtungsstruktur eines Halbleiterbaulementes und Verfahren zu ihrer Herstellung
CN95107381A CN1061782C (zh) 1994-06-10 1995-06-09 半导体器件的布线结构及其制造方法
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