KR20050071609A - 아릴아민 단위를 포함하는 공액 중합체, 그의 제조방법 및용도 - Google Patents
아릴아민 단위를 포함하는 공액 중합체, 그의 제조방법 및용도 Download PDFInfo
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Abstract
Description
Claims (15)
- 하기 화학식 Ⅰ의 단위를 적어도 1 몰% 포함하는 공액 중합체:[화학식 Ⅰ][식중, 상기 기호 및 지수는 각각 하기와 같이 정의됨:Ar1 및 Ar3는 각 경우에 있어서 동일하거나 상이하며, 각각 탄소수 2 내지 40의 치환되거나 치환되지 않을 수 있는 방향족 또는 이종방향족 고리계이고; 가능한 치환기 R1은 임의의 자유 위치에 있을 수 있으며;Ar2 및 Ar4는 각 경우에 있어서 동일하거나 상이하며, 각각 Ar1, Ar3 또는 치환되거나 치환되지 않은 스틸베닐렌 또는 톨라닐렌 단위이며;Ar-fus는 각 경우에 있어서 동일하거나 상이하며, 치환되거나 치환되지 않을 수 있는 상기 공액 시스템 내에 9 이상 40 이하의 원자들 (탄소 또는 이종원자들)을 가지고, 적어도 두 개의 융합된 고리들로 이루어진 방향족 또는 이종방향족 고리계이며; 가능한 치환기 R1은 임의의 자유 위치에 있을 수 있고;Ar5는 각 경우에 있어서 동일하거나 상이하며, 치환되거나 치환되지 않을 수 있는 탄소수 2 내지 40의 방향족 또는 이종방향족 고리계, 또는 Ar-fus이고; 가능한 치환기 R1은 임의의 자유 위치에 있을 수 있으며;m 및 n은 각 경우에 있어서 동일하거나 상이하며 각각 0, 1 또는 2이며;R1은 각 경우에 있어서 동일하거나 상이하며, 탄소수 1 내지 22의 선형-사슬, 분지형 또는 고리형 알킬 또는 알콕시 사슬이며, 여기에서 하나 이상의 비인접 탄소 원자들이 N-R2, O, S, -CO-O-, O-CO-O로 대체될 수 있고 하나 이상의 수소 원자들이 불소, 탄소수 5 내지 40의 아릴 또는 아릴옥시기 (여기에서 하나 이상의 탄소 원자들이 O, S 또는 N에 의해 대체될 수 있고 하나 이상의 비방향족 R1 라디칼들, 또는 Cl, F, CN, N(R2)2, B(R2)2에 의해 또한 치환될 수 있음)에 의해 또한 대체될 수 있으며, 둘 이상의 R1 라디칼들은 함께 고리계를 또한 형성할 수 있으며;R2는 각 경우에 있어서 동일하거나 상이하며, H, 탄소수 1 내지 22의 선형-사슬, 분지형 또는 고리형 알킬 사슬이며, 여기에서 하나 이상의 비인접 탄소 원자들이 O, S, -CO-O-, O-CO-O로 대체될 수 있고 하나 이상의 수소 원자들이 불소, 하나 이상의 탄소 원자들이 O, S 또는 N에 의해 대체될 수 있고 하나 이상의 비방향족 R1 라디칼들에 의해 또한 치환될 수 있는 탄소수 5 내지 40의 아릴기에 의해 또한 대체될 수 있으며,단, 공액 중합체가 단일항 엑시톤들을 삼중항 엑시톤으로 전이시킬 수 있는 금속 착화합물을 포함하는 경우 하기 1 내지 3의 구조에 따른 단위들은 제외됨:].
- 제 1 항에 있어서, 추가 구조적 요소들을 포함하는 것을 특징으로 하는 중합체.
- 제 2 항에 있어서, 상기 추가 구조적 요소가 메타- 또는 파라-페닐렌류, 1,4-나프틸렌류, 9,10-안트라세닐렌류, 2,7-페난트레닐렌류, 1,6- 또는 2,7- 또는 4,9-피레닐렌류 또는 2,7-테트라하이드로피레닐렌류, 옥사디아졸릴렌류, 2,5-티오페닐렌류, 2,5-피롤릴렌류, 2,5-푸라닐렌류, 2,5-피리딜렌류, 2,5-피리미디닐렌류, 3,6- 또는 2,7-카르바졸릴렌류 또는 5,8-퀴놀리닐렌류, 플루오레닐렌류, 스파이로-9,9'-바이플루오레닐렌류, 인데노플루오레닐렌류의 군에서 선택된 것을 특징으로 하는 중합체.
- 제 2 항 또는 제 3 항에 있어서, 상기 추가 구조적 요소는 발광색을 변이시킴으로써 중합체의 밴드 갭(band gap)을 또한 변화시켜 일반적으로 전하 주입 또는 이송 특성들을 변화시키는 군으로부터 선택된 것을 특징으로 하는 중합체.
- 제 2 항 내지 제 4 항 중 어느 한 항에 있어서, 상기 추가 구조적 요소는 아릴렌-비닐렌 또는 아릴렌-아세틸렌 구조들, 예를 들어 치환되거나 치환되지 않은 스틸베닐렌, 톨라닐렌, 비스스티릴아릴렌, 비스(아릴아세틸렌)아릴렌 또는 더 큰 방향족 단위들, 예를 들어 크리센류, 나프타센류, 펜타센류, 페릴렌류 또는 코로넨류의 기들로부터 선택되는 것을 특징으로 하는 중합체.
- 제 2 항 내지 제 5 항 중 어느 한 항에 있어서, 상기 추가 구조적 요소는 단일항 엑시톤들을 삼중항 엑시톤으로 전이시킬 수 있고 삼중항 상태로부터 빛을 방출하는 금속 착화합물인 것을 특징으로 하는 중합체.
- 제 6 항에 있어서, 상기 추가 구조적 요소는 d- 및 f-전이 금속들을 포함하는 것을 특징으로 하는 중합체.
- 제 7 항에 있어서, 상기 추가 구조적 요소가 8 내지 10 족의 금속들을 포함하는 것을 특징으로 하는 중합체.
- 제 1 항 내지 제 8 항 중 어느 한 항에 있어서, 상기 기호 및 지수들은 하기의 것임을 특징으로 하는 중합체:Ar1, Ar2, Ar3 및 Ar4는 각 경우에 있어서 동일하거나 상이하며, 각각 티오펜, 벤젠, 피리딘, 플루오렌, 스파이로바이플루오렌, 안트라센 또는 나프탈렌으로부터 선택되는 방향족 또는 이종방향족 고리계이고, 각각은 자유 위치에 0 내지 2 개의 치환기 R1을 가지며;Ar-fus는 각 경우에 있어서 동일하거나 상이하며, 나프탈렌, 퀴놀린, 안트라센, 페난트렌 또는 피렌으로부터 선택된 방향족 또는 이종방향족 고리계이고, 상기 각각은 자유 위치에 0 내지 2 개의 치환기 R1을 가지며;Ar5는 각 경우에 있어서 동일하거나 상이하며, 벤젠, 나프탈렌, 퀴놀린, 안트라센, 페난트렌 또는 피렌으로부터 선택된 방향족 또는 이종방향족 고리계이고, 상기 각각은 자유 위치에 0 내지 2의 치환기 R1을 가지며;n, m, R1 및 R2는 각각 제 1 항에서 설명한 바와 동일함.
- 제 1 항 내지 제 9 항 중 어느 한 항에 있어서, 화학식 Ⅰ 유형의 구조적 요소들이 화학식 Ⅱ 내지 ⅩⅩⅩⅣ로부터 선택된 것임을 특징으로 하는 중합체.
- 제 1 항 내지 제 10 항 중 어느 한 항에 있어서, 치환기들에 있어서 반복 단위 당 적어도 2 개의 비방향족 탄소 원자들이 평균적으로 존재하는 것을 특징으로 하는 중합체.
- 제 1 항 내지 제 11 항 중 어느 한 항에 있어서, 12 개 초과의 탄소 원자들을 갖는 긴-사슬 치환기들이 하나의 선형 사슬에 존재하지 않는 것을 특징으로 하는 중합체.
- 제 1 항 내지 제 12 항 중 어느 한 항에 있어서, 스즈끼(SUZUKI) 커플링, 야마모토(YAMAMOTO) 커플링, 스틸(STILLE) 커플링 또는 하트위그/부치워드(HARTWIG/BUCHWALD) 커플링에 의해 제조되는 것을 특징으로 하는 중합체.
- 유기 집적회로(O-IC), 유기 전계-효과 트랜지스터(OFET), 유기박막 트랜지스터(OTFT), 유기 태양전지(O-SC), 유기 발광 다이오드(OLED) 또는 유기 레이저 다이오드(O-laser)에서 제 1 항 내지 제 13 항 중 어느 한 항에 기재된 중합체의 용도.
- 하나 이상의 활성층들을 포함하며, 상기 활성층들의 적어도 하나가 제 1 항 내지 제 13 항 중 어느 한 항에서 청구된 하나 이상의 중합체들을 포함하는 것인 전자 부품.
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-
2002
- 2002-10-25 DE DE10249723A patent/DE10249723A1/de not_active Withdrawn
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2003
- 2003-10-17 US US10/532,465 patent/US7910687B2/en not_active Expired - Fee Related
- 2003-10-17 KR KR1020057006941A patent/KR100997069B1/ko active IP Right Grant
- 2003-10-17 CN CNB2003801020267A patent/CN100549060C/zh not_active Expired - Lifetime
- 2003-10-17 JP JP2004545870A patent/JP4620466B2/ja not_active Expired - Lifetime
- 2003-10-17 EP EP03776866A patent/EP1558662B1/de not_active Expired - Fee Related
- 2003-10-17 WO PCT/EP2003/011510 patent/WO2004037887A2/de active IP Right Grant
- 2003-10-17 DE DE50305988T patent/DE50305988D1/de not_active Expired - Lifetime
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EP1558662A2 (de) | 2005-08-03 |
JP4620466B2 (ja) | 2011-01-26 |
US20060058494A1 (en) | 2006-03-16 |
EP1558662B1 (de) | 2006-12-13 |
KR100997069B1 (ko) | 2010-11-29 |
DE10249723A1 (de) | 2004-05-06 |
WO2004037887A2 (de) | 2004-05-06 |
CN100549060C (zh) | 2009-10-14 |
WO2004037887A3 (de) | 2004-05-27 |
JP2006504814A (ja) | 2006-02-09 |
DE50305988D1 (de) | 2007-01-25 |
US7910687B2 (en) | 2011-03-22 |
CN1708528A (zh) | 2005-12-14 |
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