KR20040063893A - 원자층 증착 반응기 - Google Patents
원자층 증착 반응기 Download PDFInfo
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- KR20040063893A KR20040063893A KR10-2004-7002218A KR20047002218A KR20040063893A KR 20040063893 A KR20040063893 A KR 20040063893A KR 20047002218 A KR20047002218 A KR 20047002218A KR 20040063893 A KR20040063893 A KR 20040063893A
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45514—Mixing in close vicinity to the substrate
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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Abstract
Description
Claims (23)
- 기판에 교대로 반복되는 기상반응물의 표면반응을 행하기 위한 반응기에 있어서,반응공간이 형성되어 있는 반응챔버와;상기 반응공간내에 있으며, 상기 반응공간을 제2부분과 상기 기판이 위치하는 제1부분으로 나누는 샤워해드 플레이트와;상기 반응공간의 상기 제1부분과 연통하는 제1전구체 소스와;상기 반응공간의 상기 제2부분과 연통하는 제2전구체 소스를 포함하며,상기 샤워해드 플레이트는 상기 기판상의 표면반응이 수평방향이 되도록 형성된 것을 특징으로 하는 반응기.
- 제 1항에 있어서,상기 샤워해드 플레이트는, 적어도 일부에, 상기 반응챔버의 상기 제2부분으로부터 상기 제1부분으로 연장되는 복수의 통로가 형성되어 있는 제1플레이트를 포함하는 것을 특징으로 하는 반응기.
- 제 2항에 있어서,상기 제1플레이트의 두께는 가변인 것을 특징으로 하는 반응기.
- 제 2항에 있어서,상기 제1플레이트의 상기 복수의 통로를 선택적으로 개방하고 폐쇄할 수 있게 형성된 셔터 플레이트를 더 포함하는 것을 특징으로 하는 반응기.
- 제 4항에 있어서,상기 셔터 플레이트는 상기 제1플레이트의 상기 복수의 통로와 기하학적으로 오프셋 형태인 복수의 통로를 포함하는 것을 특징으로 하는 반응기.
- 제 4항에 있어서,상기 샤워해드 플레이트의 두께는 가변인 것을 특징으로 하는 반응기.
- 제 1항에 있어서,상기 샤워해드 플레이트는 일체로 형성된 단일의 플레이트인 것을 특징으로 하는 반응기.
- 제 1항에 있어서,상기 샤워해드 플레이트는 상기 기판의 반응표면에서의 흐름 조건을 변형하도록 형성된 것을 특징으로 하는 반응기.
- 제 1항에 있어서,플라즈마 발생 소스를 더 포함하며,상기 반응기의 상기 제2부분은 인-시츄 라디칼을 발생하기 위한 플라즈마 캐비티를 형성하는 것을 특징으로 하는 반응기.
- 제 9항에 있어서,상기 플라즈마 발생 소스는 유도 결합 플라즈마를 생성하도록 형성된 것을 특징으로 하는 반응기.
- 제 9항에 있어서,상기 플라즈마 발생 소스는 용량 결합 플라즈마를 생성하도록 형성된 것을 특징으로 하는 반응기.
- 제 11항에 있어서,상기 플라즈마 발생 소스는 제1전극과 제2전극을 포함하는 것을 특징으로 하는 반응기.
- 제 12항에 있어서,상기 제1전극은 상기 반응챔버의 외부에 위치하며, 상기 샤워해드가 상기 제2전극인 것을 특징으로 하는 반응기.
- 제 12항에 있어서,상기 제1전극은 상기 반응챔버의 내부에 위치하며, 상기 샤워해드가 상기 제2전극인 것을 특징으로 하는 반응기.
- 기판에 교대로 반복되는 기상반응물의 표면반응을 행하기 위한 반응기에 있어서,반응공간이 형성되어 있는 반응챔버와;상기 반응챔버의 내부에 위치하는 기판과;상기 반응챔버내에 위치하며, 상기 기판의 상부에 직접적으로 플라즈마를 생성하기 위한 유도 결합 플라즈마 발생 장치와;상기 반응공간과 연통하는 제1전구체 소스를 포함하는 것을 특징으로 하는 반응기.
- 제 15항에 있어서,상기 유도 결합 플라즈마 발생 장치는 RF 코일을 포함하는 것을 특징으로 하는 반응기.
- 제 15항에 있어서,상기 유도 결합 플라즈마 발생 장치는 평면 유도 코일을 포함하는 것을 특징으로 하는 반응기.
- 기판에 교대로 반복되는 기상반응물의 표면반응을 행하기 위한 반응기에 있어서,반응공간이 형성되어 있는 반응챔버와;상기 반응챔버의 내부에 위치하는 기판과;상부 표면과 하부 표면을 갖는 플라즈마 발생 기구와;입구를 통하여 상기 반응공간과 연통하는 제1전구체 소스와;상기 플라즈마 발생 장치의 상부의 상기 제1전구체를, 상기 플라즈마 발생 장치의 측면을 따라서, 상기 플라즈마 발생 장치와 기판 사이의 공간으로 흐르도록 이끄는 흐름 안내부를 포함하는 것을 특징으로 하는 반응기.여기서, 상기 플라즈마 발생 장치는 상기 반응챔버 내부에 위치하여, 플라즈마는 상기 반응챔버의 상부벽과 상기 플라즈마 발생 장치의 상부 표면의 사이에서 발생하며;상기 제1전구체의 흐름은 실질적으로 상기 기판에 평행한 제1방향이다.
- 제 18항에 있어서,상기 플라즈마 발생 장치는 유도 결합 플라즈마를 생성하도록 형성된 것을 특징으로 하는 반응기.
- 제 19항에 있어서,상기 플라즈마 발생 장치의 상기 하부면은 전도 플레이트를 포함하는 것을 특징으로 하는 반응기.
- 제 18항에 있어서,상기 플라즈마 발생 장치는 용량 결합 플라즈마를 만들도록 형성된 것을 특징으로 하는 반응기.
- 기판이 기상 반응물의 표면반응을 교대로 반복하여 겪게 하도록 형성된 반응기에 있어서,기계적 힘에 의해 상호 고정된 제1섹션과 제2섹션을 포함하는 반응공간이 형성되어 있는 반응챔버와;상기 반응공간의 내부에 위치하며 상기 반응공간을 상기 기판이 위치하는 제1부분과 제2부분으로 나누는 샤워해드 플레이트와;상기 반응공간의 상기 제1부분과 연통하는 제1전구체 소스와;상기 반응공간의 상기 제2부분과 연통하는 제2전구체 소스를 포함하는 것을 특징으로 하는 반응기.여기서, 상기 샤워해드 플레이트는 적어도 일부분에 상기 반응챔버의 상기 제2부분으로부터 상기 제2부분으로 향해 연장된 복수의 통로를 포함하며, 상기 반응챔버의 상기 제1섹션과 상기 제2섹션에 의해 형성된, 적어도 일부분의, 홈통 사이에 지지되어 있다.
- 복수의 사이클을 포함하는 원자층 증착방법에 있어서,상기 각 사이클은,기판이 위치하는 반응공간에 제1전구체를 공급하는 단계와;흡착종의 층이 형성되도록 상기 기판의 표면상에 제1전구체가 흡착되도록 하는 단계와;상기 반응공간으로부터 상기 제1전구체를 제거하는 단계와;제2전구체를 공급하는 단계와;상기 제2전구체를, 실질적으로 손상되지 않게, 상기 기판상에 연장되어 있는 샤워해드를 통해 흘려 보내, 상기 제2전구체가 상기 흡착종과 반응하도록 하는 단계와;상기 반응공간으로부터 상기 제2전구체를 제거하는 단계를 포함하는 것을 특징으로 하는 원자층 증착방법.
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- 2002-08-15 JP JP2003520873A patent/JP2004538374A/ja active Pending
- 2002-08-15 WO PCT/US2002/026192 patent/WO2003016587A1/en active Application Filing
- 2002-08-15 KR KR1020047002218A patent/KR100943695B1/ko active IP Right Grant
- 2002-08-15 TW TW091118370A patent/TW578212B/zh not_active IP Right Cessation
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2004
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KR101463581B1 (ko) * | 2005-01-18 | 2014-11-20 | 에이에스엠 아메리카, 인코포레이티드 | 박막 성장용 반응 시스템 |
US9359672B2 (en) | 2005-01-18 | 2016-06-07 | Asm America, Inc. | Reaction system for growing a thin film |
US10468291B2 (en) | 2005-01-18 | 2019-11-05 | Asm America, Inc. | Reaction system for growing a thin film |
KR101355638B1 (ko) * | 2006-11-09 | 2014-01-29 | 한국에이에스엠지니텍 주식회사 | 원자층 증착 장치 |
KR100940770B1 (ko) * | 2008-11-06 | 2010-02-10 | 주식회사 시스넥스 | 화학기상증착 반응기의 가스공급장치 |
US8828490B2 (en) | 2011-07-13 | 2014-09-09 | Samsung Display Co., Ltd. | Vapor deposition method |
US9012257B2 (en) | 2011-07-13 | 2015-04-21 | Samsung Display Co., Ltd. | Vapor deposition apparatus and method, and method of manufacturing organic light emitting display apparatus |
US11626313B2 (en) | 2017-11-03 | 2023-04-11 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
Also Published As
Publication number | Publication date |
---|---|
TW578212B (en) | 2004-03-01 |
US6820570B2 (en) | 2004-11-23 |
US20050092249A1 (en) | 2005-05-05 |
JP2004538374A (ja) | 2004-12-24 |
US20030075273A1 (en) | 2003-04-24 |
KR100943695B1 (ko) | 2010-02-22 |
WO2003016587A1 (en) | 2003-02-27 |
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