DE69719108D1 - Plasmabehandlungsgerät - Google Patents

Plasmabehandlungsgerät

Info

Publication number
DE69719108D1
DE69719108D1 DE69719108T DE69719108T DE69719108D1 DE 69719108 D1 DE69719108 D1 DE 69719108D1 DE 69719108 T DE69719108 T DE 69719108T DE 69719108 T DE69719108 T DE 69719108T DE 69719108 D1 DE69719108 D1 DE 69719108D1
Authority
DE
Germany
Prior art keywords
treatment device
plasma treatment
plasma
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69719108T
Other languages
English (en)
Inventor
Masayuki Tomoyasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE69719108D1 publication Critical patent/DE69719108D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity
DE69719108T 1996-05-02 1997-04-30 Plasmabehandlungsgerät Expired - Lifetime DE69719108D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13594396 1996-05-02

Publications (1)

Publication Number Publication Date
DE69719108D1 true DE69719108D1 (de) 2003-03-27

Family

ID=15163478

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69719108T Expired - Lifetime DE69719108D1 (de) 1996-05-02 1997-04-30 Plasmabehandlungsgerät

Country Status (5)

Country Link
US (1) US5904780A (de)
EP (1) EP0805475B1 (de)
KR (1) KR100342014B1 (de)
DE (1) DE69719108D1 (de)
TW (1) TW336335B (de)

Families Citing this family (52)

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US5928967A (en) * 1996-06-10 1999-07-27 International Business Machines Corporation Selective oxide-to-nitride etch process using C4 F8 /CO/Ar
JP3364675B2 (ja) * 1997-09-30 2003-01-08 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置
JPH11135438A (ja) * 1997-10-28 1999-05-21 Nippon Asm Kk 半導体プラズマ処理装置
US20060137821A1 (en) * 2004-12-28 2006-06-29 Lam Research Coporation Window protector for sputter etching of metal layers
US6055928A (en) * 1998-03-02 2000-05-02 Ball Semiconductor, Inc. Plasma immersion ion processor for fabricating semiconductor integrated circuits
US6239011B1 (en) * 1998-06-03 2001-05-29 Vanguard International Semiconductor Corporation Method of self-aligned contact hole etching by fluorine-containing discharges
JP3296292B2 (ja) * 1998-06-26 2002-06-24 松下電器産業株式会社 エッチング方法、クリーニング方法、及びプラズマ処理装置
US6180532B1 (en) * 1998-12-15 2001-01-30 United Microelectronics Corp. Method for forming a borderless contact hole
TW469534B (en) * 1999-02-23 2001-12-21 Matsushita Electric Ind Co Ltd Plasma processing method and apparatus
DE19955671B4 (de) * 1999-11-19 2004-07-22 Muegge Electronic Gmbh Vorrichtung zur Erzeugung von Plasma
JP4222707B2 (ja) 2000-03-24 2009-02-12 東京エレクトロン株式会社 プラズマ処理装置及び方法、ガス供給リング及び誘電体
KR100789796B1 (ko) * 2000-03-30 2007-12-31 동경 엘렉트론 주식회사 플라즈마 처리 장치
US6508198B1 (en) * 2000-05-11 2003-01-21 Applied Materials Inc. Automatic tuning in a tapped RF transformer inductive source of a plasma reactor for processing a semiconductor wafer
JP3573058B2 (ja) * 2000-05-17 2004-10-06 セイコーエプソン株式会社 温度調整装置
US6356025B1 (en) * 2000-10-03 2002-03-12 Archimedes Technology Group, Inc. Shielded rf antenna
JP2002198355A (ja) * 2000-12-26 2002-07-12 Tokyo Electron Ltd プラズマ処理装置
EP1421606A4 (de) * 2001-08-06 2008-03-05 Genitech Co Ltd Geräte für die plasmaverstärkte atomische schichtablagerung (peald) und verfahren zur bildung eines dünnen leitfähigen films damit dafür
US6820570B2 (en) * 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
KR100760291B1 (ko) * 2001-11-08 2007-09-19 에이에스엠지니텍코리아 주식회사 박막 형성 방법
JP3820188B2 (ja) 2002-06-19 2006-09-13 三菱重工業株式会社 プラズマ処理装置及びプラズマ処理方法
JP3714924B2 (ja) * 2002-07-11 2005-11-09 東京エレクトロン株式会社 プラズマ処理装置
US7993460B2 (en) 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
US7395113B2 (en) * 2004-03-16 2008-07-01 Medtronic, Inc. Collecting activity information to evaluate therapy
US7491181B2 (en) 2004-03-16 2009-02-17 Medtronic, Inc. Collecting activity and sleep quality information via a medical device
US7313440B2 (en) * 2004-04-14 2007-12-25 Medtronic, Inc. Collecting posture and activity information to evaluate therapy
US20060109195A1 (en) * 2004-11-22 2006-05-25 Tihiro Ohkawa Shielded antenna
US7608549B2 (en) * 2005-03-15 2009-10-27 Asm America, Inc. Method of forming non-conformal layers
WO2006106767A1 (ja) * 2005-03-30 2006-10-12 Matsushita Electric Industrial Co., Ltd. 伝送線路対及び伝送線路群
US20060237137A1 (en) * 2005-04-21 2006-10-26 Shao-Chi Chang Semiconductor apparatus capable of reducing outgassing pollution and method of achieving the same
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
JP4707588B2 (ja) * 2006-03-16 2011-06-22 東京エレクトロン株式会社 プラズマ処理装置及びそれに用いられる電極
US20080241387A1 (en) * 2007-03-29 2008-10-02 Asm International N.V. Atomic layer deposition reactor
US20090035946A1 (en) * 2007-07-31 2009-02-05 Asm International N.V. In situ deposition of different metal-containing films using cyclopentadienyl metal precursors
KR20090018290A (ko) * 2007-08-17 2009-02-20 에이에스엠지니텍코리아 주식회사 증착 장치
US8383525B2 (en) * 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
US20100266765A1 (en) * 2009-04-21 2010-10-21 White Carl L Method and apparatus for growing a thin film onto a substrate
US9111729B2 (en) 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US9190289B2 (en) 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
US20110278260A1 (en) * 2010-05-14 2011-11-17 Applied Materials, Inc. Inductive plasma source with metallic shower head using b-field concentrator
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
US9155181B2 (en) * 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US8501630B2 (en) * 2010-09-28 2013-08-06 Tokyo Electron Limited Selective etch process for silicon nitride
US8900403B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US8900402B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US8980046B2 (en) * 2011-04-11 2015-03-17 Lam Research Corporation Semiconductor processing system with source for decoupled ion and radical control
JP5644719B2 (ja) * 2011-08-24 2014-12-24 東京エレクトロン株式会社 成膜装置、基板処理装置及びプラズマ発生装置
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US10410889B2 (en) 2014-07-25 2019-09-10 Applied Materials, Inc. Systems and methods for electrical and magnetic uniformity and skew tuning in plasma processing reactors
KR20210012178A (ko) * 2019-07-24 2021-02-03 삼성전자주식회사 기판 처리장치 및 이를 구비하는 기판 처리 시스템

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5061838A (en) * 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
DE4109619C1 (de) * 1991-03-23 1992-08-06 Leybold Ag, 6450 Hanau, De
DE4118973C2 (de) * 1991-06-08 1999-02-04 Fraunhofer Ges Forschung Vorrichtung zur plasmaunterstützten Bearbeitung von Substraten und Verwendung dieser Vorrichtung
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5580385A (en) * 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
US5683548A (en) * 1996-02-22 1997-11-04 Motorola, Inc. Inductively coupled plasma reactor and process

Also Published As

Publication number Publication date
TW336335B (en) 1998-07-11
US5904780A (en) 1999-05-18
KR100342014B1 (ko) 2002-09-18
KR970077302A (ko) 1997-12-12
EP0805475A3 (de) 1998-03-18
EP0805475B1 (de) 2003-02-19
EP0805475A2 (de) 1997-11-05

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Legal Events

Date Code Title Description
8332 No legal effect for de