TW336335B - Plasma processing apparatus - Google Patents

Plasma processing apparatus

Info

Publication number
TW336335B
TW336335B TW086105825A TW86105825A TW336335B TW 336335 B TW336335 B TW 336335B TW 086105825 A TW086105825 A TW 086105825A TW 86105825 A TW86105825 A TW 86105825A TW 336335 B TW336335 B TW 336335B
Authority
TW
Taiwan
Prior art keywords
processing
plasma
processing container
container
processing gas
Prior art date
Application number
TW086105825A
Other languages
English (en)
Inventor
Masayuki Tomoyasu
Original Assignee
Tokyo Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Co Ltd filed Critical Tokyo Electron Co Ltd
Application granted granted Critical
Publication of TW336335B publication Critical patent/TW336335B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW086105825A 1996-05-02 1997-05-01 Plasma processing apparatus TW336335B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13594396 1996-05-02

Publications (1)

Publication Number Publication Date
TW336335B true TW336335B (en) 1998-07-11

Family

ID=15163478

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086105825A TW336335B (en) 1996-05-02 1997-05-01 Plasma processing apparatus

Country Status (5)

Country Link
US (1) US5904780A (zh)
EP (1) EP0805475B1 (zh)
KR (1) KR100342014B1 (zh)
DE (1) DE69719108D1 (zh)
TW (1) TW336335B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8662010B2 (en) 2002-06-19 2014-03-04 Mitsubishi Heavy Industries, Ltd. Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method

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JP3573058B2 (ja) * 2000-05-17 2004-10-06 セイコーエプソン株式会社 温度調整装置
US6356025B1 (en) * 2000-10-03 2002-03-12 Archimedes Technology Group, Inc. Shielded rf antenna
JP2002198355A (ja) * 2000-12-26 2002-07-12 Tokyo Electron Ltd プラズマ処理装置
EP1421606A4 (en) * 2001-08-06 2008-03-05 Genitech Co Ltd PLASMA ACTIVE ATOMIC LAYER (PEALD) DEPOSITION APPARATUS AND METHOD OF FORMING THIN FILM USING SAID APPARATUS
US6820570B2 (en) * 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
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JP3714924B2 (ja) * 2002-07-11 2005-11-09 東京エレクトロン株式会社 プラズマ処理装置
US7993460B2 (en) 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
US7491181B2 (en) * 2004-03-16 2009-02-17 Medtronic, Inc. Collecting activity and sleep quality information via a medical device
US7395113B2 (en) * 2004-03-16 2008-07-01 Medtronic, Inc. Collecting activity information to evaluate therapy
WO2005102449A1 (en) * 2004-04-14 2005-11-03 Medtronic, Inc. Collecting posture and activity information to evaluate therapy
US20060109195A1 (en) * 2004-11-22 2006-05-25 Tihiro Ohkawa Shielded antenna
US7608549B2 (en) * 2005-03-15 2009-10-27 Asm America, Inc. Method of forming non-conformal layers
WO2006106767A1 (ja) * 2005-03-30 2006-10-12 Matsushita Electric Industrial Co., Ltd. 伝送線路対及び伝送線路群
US20060237137A1 (en) * 2005-04-21 2006-10-26 Shao-Chi Chang Semiconductor apparatus capable of reducing outgassing pollution and method of achieving the same
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
JP4707588B2 (ja) * 2006-03-16 2011-06-22 東京エレクトロン株式会社 プラズマ処理装置及びそれに用いられる電極
US20080241387A1 (en) * 2007-03-29 2008-10-02 Asm International N.V. Atomic layer deposition reactor
US20090035946A1 (en) * 2007-07-31 2009-02-05 Asm International N.V. In situ deposition of different metal-containing films using cyclopentadienyl metal precursors
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US9190289B2 (en) * 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
US20110278260A1 (en) 2010-05-14 2011-11-17 Applied Materials, Inc. Inductive plasma source with metallic shower head using b-field concentrator
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
US9155181B2 (en) * 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US8501630B2 (en) * 2010-09-28 2013-08-06 Tokyo Electron Limited Selective etch process for silicon nitride
US8980046B2 (en) 2011-04-11 2015-03-17 Lam Research Corporation Semiconductor processing system with source for decoupled ion and radical control
US8900403B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US8900402B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
JP5644719B2 (ja) * 2011-08-24 2014-12-24 東京エレクトロン株式会社 成膜装置、基板処理装置及びプラズマ発生装置
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US10410889B2 (en) * 2014-07-25 2019-09-10 Applied Materials, Inc. Systems and methods for electrical and magnetic uniformity and skew tuning in plasma processing reactors
KR20210012178A (ko) * 2019-07-24 2021-02-03 삼성전자주식회사 기판 처리장치 및 이를 구비하는 기판 처리 시스템
US20220078899A1 (en) * 2020-09-07 2022-03-10 Dmytro Vladimirovich Poluektov Magnetic containment field generating discrete redundancy device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8662010B2 (en) 2002-06-19 2014-03-04 Mitsubishi Heavy Industries, Ltd. Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method

Also Published As

Publication number Publication date
KR970077302A (ko) 1997-12-12
EP0805475A2 (en) 1997-11-05
DE69719108D1 (de) 2003-03-27
US5904780A (en) 1999-05-18
EP0805475B1 (en) 2003-02-19
EP0805475A3 (en) 1998-03-18
KR100342014B1 (ko) 2002-09-18

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Legal Events

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees