ATE127615T1 - Sanftaetz-einheit fuer modulare bearbeitungsanlagen und ecr-plasmaerzeuger fuer eine solche einheit. - Google Patents
Sanftaetz-einheit fuer modulare bearbeitungsanlagen und ecr-plasmaerzeuger fuer eine solche einheit.Info
- Publication number
- ATE127615T1 ATE127615T1 AT92904619T AT92904619T ATE127615T1 AT E127615 T1 ATE127615 T1 AT E127615T1 AT 92904619 T AT92904619 T AT 92904619T AT 92904619 T AT92904619 T AT 92904619T AT E127615 T1 ATE127615 T1 AT E127615T1
- Authority
- AT
- Austria
- Prior art keywords
- unit
- plasma
- cavity
- sanftaetz
- plasma generator
- Prior art date
Links
- 238000005530 etching Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32688—Multi-cusp fields
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
- H05H1/16—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields
- H05H1/18—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields wherein the fields oscillate at very high frequency, e.g. in the microwave range, e.g. using cyclotron resonance
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Sampling And Sample Adjustment (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70345291A | 1991-05-21 | 1991-05-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE127615T1 true ATE127615T1 (de) | 1995-09-15 |
Family
ID=24825449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT92904619T ATE127615T1 (de) | 1991-05-21 | 1992-01-21 | Sanftaetz-einheit fuer modulare bearbeitungsanlagen und ecr-plasmaerzeuger fuer eine solche einheit. |
Country Status (12)
Country | Link |
---|---|
US (1) | US5280219A (de) |
EP (1) | EP0585229B1 (de) |
JP (1) | JP3128239B2 (de) |
AT (1) | ATE127615T1 (de) |
AU (1) | AU1240692A (de) |
CA (1) | CA2102201A1 (de) |
DE (1) | DE69204670T2 (de) |
DK (1) | DK0585229T3 (de) |
ES (1) | ES2078735T3 (de) |
GR (1) | GR3018156T3 (de) |
TW (1) | TW201367B (de) |
WO (1) | WO1992021136A1 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4242894A1 (de) * | 1992-12-18 | 1994-06-23 | Leybold Ag | Vorrichtung zur Mehrfacheinspeisung von HF-Leistung in Kathodenkörpern |
FR2701797B1 (fr) * | 1993-02-18 | 1995-03-31 | Commissariat Energie Atomique | Coupleur de transfert d'une puissance micro-onde vers une nappe de plasma et source micro-onde linéaire pour le traitement de surfaces par plasma . |
JP3124204B2 (ja) * | 1994-02-28 | 2001-01-15 | 株式会社東芝 | プラズマ処理装置 |
US5669975A (en) * | 1996-03-27 | 1997-09-23 | Sony Corporation | Plasma producing method and apparatus including an inductively-coupled plasma source |
US6163006A (en) * | 1998-02-06 | 2000-12-19 | Astex-Plasmaquest, Inc. | Permanent magnet ECR plasma source with magnetic field optimization |
US6424733B2 (en) | 1998-07-20 | 2002-07-23 | Micron Technology, Inc. | Method and apparatus for inspecting wafers |
JP3608416B2 (ja) * | 1999-02-02 | 2005-01-12 | 日新電機株式会社 | プラズマ源 |
US7220937B2 (en) * | 2000-03-17 | 2007-05-22 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination |
US6528751B1 (en) | 2000-03-17 | 2003-03-04 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma |
US7196283B2 (en) | 2000-03-17 | 2007-03-27 | Applied Materials, Inc. | Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface |
US20070048882A1 (en) * | 2000-03-17 | 2007-03-01 | Applied Materials, Inc. | Method to reduce plasma-induced charging damage |
US7141757B2 (en) * | 2000-03-17 | 2006-11-28 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent |
US6900596B2 (en) * | 2002-07-09 | 2005-05-31 | Applied Materials, Inc. | Capacitively coupled plasma reactor with uniform radial distribution of plasma |
US7030335B2 (en) * | 2000-03-17 | 2006-04-18 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
US8617351B2 (en) * | 2002-07-09 | 2013-12-31 | Applied Materials, Inc. | Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction |
US6894245B2 (en) * | 2000-03-17 | 2005-05-17 | Applied Materials, Inc. | Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
US8048806B2 (en) * | 2000-03-17 | 2011-11-01 | Applied Materials, Inc. | Methods to avoid unstable plasma states during a process transition |
US20030010454A1 (en) * | 2000-03-27 | 2003-01-16 | Bailey Andrew D. | Method and apparatus for varying a magnetic field to control a volume of a plasma |
US7067034B2 (en) | 2000-03-27 | 2006-06-27 | Lam Research Corporation | Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma |
WO2003049170A1 (fr) * | 2001-12-07 | 2003-06-12 | Tokyo Electron Limited | Dispositif de traitement au plasma |
TWI283899B (en) * | 2002-07-09 | 2007-07-11 | Applied Materials Inc | Capacitively coupled plasma reactor with magnetic plasma control |
US7452824B2 (en) * | 2003-05-16 | 2008-11-18 | Applied Materials, Inc. | Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters |
US7247218B2 (en) * | 2003-05-16 | 2007-07-24 | Applied Materials, Inc. | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power |
US7795153B2 (en) * | 2003-05-16 | 2010-09-14 | Applied Materials, Inc. | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters |
US7910013B2 (en) | 2003-05-16 | 2011-03-22 | Applied Materials, Inc. | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure |
US7470626B2 (en) * | 2003-05-16 | 2008-12-30 | Applied Materials, Inc. | Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure |
US7901952B2 (en) * | 2003-05-16 | 2011-03-08 | Applied Materials, Inc. | Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters |
US7556718B2 (en) * | 2004-06-22 | 2009-07-07 | Tokyo Electron Limited | Highly ionized PVD with moving magnetic field envelope for uniform coverage of feature structure and wafer |
US8202575B2 (en) * | 2004-06-28 | 2012-06-19 | Cambridge Nanotech, Inc. | Vapor deposition systems and methods |
US7423861B2 (en) | 2005-04-07 | 2008-09-09 | American Radionic Company, Inc. | Capacitor with multiple elements for multiple replacement applications |
US11183338B2 (en) | 2005-04-07 | 2021-11-23 | Amrad Manufacturing, Llc | Capacitor with multiple elements for multiple replacement applications |
US11183336B2 (en) | 2005-04-07 | 2021-11-23 | Amrad Manufacturing, Llc | Capacitor with multiple elements for multiple replacement applications |
US9412521B2 (en) | 2005-04-07 | 2016-08-09 | American Radionic Company, Inc. | Capacitor with multiple elements for multiple replacement applications |
US11183337B1 (en) | 2005-04-07 | 2021-11-23 | Amrad Manufacturing, Llc | Capacitor with multiple elements for multiple replacement applications |
US7203053B2 (en) | 2005-04-07 | 2007-04-10 | American Radionic Company, Inc. | Capacitor for multiple replacement applications |
US7359177B2 (en) * | 2005-05-10 | 2008-04-15 | Applied Materials, Inc. | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output |
USD818959S1 (en) | 2005-12-23 | 2018-05-29 | American Radionic Company, Inc. | Capacitor |
US7476291B2 (en) * | 2006-09-28 | 2009-01-13 | Lam Research Corporation | High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation |
US7952854B2 (en) | 2006-12-29 | 2011-05-31 | American Radionic Company, Inc. | Electrolytic capacitor |
JP5606063B2 (ja) * | 2009-12-28 | 2014-10-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
GB201021865D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
US9318261B2 (en) | 2013-05-21 | 2016-04-19 | American Radionic Company, Inc. | Power factor correction capacitors |
US10163609B2 (en) * | 2016-12-15 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Plasma generation for ion implanter |
US11195663B2 (en) | 2017-05-12 | 2021-12-07 | Amrad Manufacturing, Llc | Capacitor with multiple elements for multiple replacement applications |
US11424077B1 (en) * | 2017-12-13 | 2022-08-23 | Amrad Manufacturing, Llc | Hard start kit for multiple replacement applications |
US10497518B1 (en) | 2017-12-13 | 2019-12-03 | American Radionic Company, Inc. | Hard start kit for multiple replacement applications |
JP6579635B1 (ja) * | 2018-09-12 | 2019-09-25 | 春日電機株式会社 | 除電装置及びプラズマ発生装置 |
US10586655B1 (en) | 2018-12-28 | 2020-03-10 | American Radionic Company, Inc. | Capacitor with multiple elements for multiple replacement applications |
USD906247S1 (en) | 2019-07-11 | 2020-12-29 | American Radionic Company, Inc. | Capacitor |
MX2022005175A (es) | 2021-04-30 | 2022-11-01 | Amrad Mfg Llc | Kit de arranque externo para múltiples aplicaciones de reemplazo. |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55131175A (en) * | 1979-03-30 | 1980-10-11 | Toshiba Corp | Surface treatment apparatus with microwave plasma |
FR2475798A1 (fr) * | 1980-02-13 | 1981-08-14 | Commissariat Energie Atomique | Procede et dispositif de production d'ions lourds fortement charges et une application mettant en oeuvre le procede |
FR2546358B1 (fr) * | 1983-05-20 | 1985-07-05 | Commissariat Energie Atomique | Source d'ions a resonance cyclotronique des electrons |
FR2551302B1 (fr) * | 1983-08-30 | 1986-03-14 | Commissariat Energie Atomique | Structure ferromagnetique d'une source d'ions creee par des aimants permanents et des solenoides |
FR2556498B1 (fr) * | 1983-12-07 | 1986-09-05 | Commissariat Energie Atomique | Source d'ions multicharges a plusieurs zones de resonance cyclotronique electronique |
DE3580953D1 (de) * | 1984-08-31 | 1991-01-31 | Anelva Corp | Entladungsvorrichtung. |
FR2583250B1 (fr) * | 1985-06-07 | 1989-06-30 | France Etat | Procede et dispositif d'excitation d'un plasma par micro-ondes a la resonance cyclotronique electronique |
JPS6276137A (ja) * | 1985-09-30 | 1987-04-08 | Hitachi Ltd | イオン源 |
JPH0654644B2 (ja) * | 1985-10-04 | 1994-07-20 | 株式会社日立製作所 | イオン源 |
DE3729347A1 (de) * | 1986-09-05 | 1988-03-17 | Mitsubishi Electric Corp | Plasmaprozessor |
JP2631650B2 (ja) * | 1986-12-05 | 1997-07-16 | アネルバ株式会社 | 真空装置 |
US4902931A (en) * | 1987-03-16 | 1990-02-20 | Hauzer Holding B.V. | Method and arrangement for mechanically moving of a magnetic field generating device in a cathode arc discharge evaporating device |
DE3810197A1 (de) * | 1987-03-27 | 1988-10-13 | Mitsubishi Electric Corp | Plasma-bearbeitungseinrichtung |
JPS63244619A (ja) * | 1987-03-30 | 1988-10-12 | Sumitomo Metal Ind Ltd | プラズマ装置 |
KR880013424A (ko) * | 1987-04-08 | 1988-11-30 | 미타 가츠시게 | 플라즈머 장치 |
US4866346A (en) * | 1987-06-22 | 1989-09-12 | Applied Science & Technology, Inc. | Microwave plasma generator |
US4778561A (en) * | 1987-10-30 | 1988-10-18 | Veeco Instruments, Inc. | Electron cyclotron resonance plasma source |
KR960014434B1 (ko) * | 1987-12-09 | 1996-10-15 | 후세 노보루 | 플라즈마 처리장치 |
US5053678A (en) * | 1988-03-16 | 1991-10-01 | Hitachi, Ltd. | Microwave ion source |
JPH0216732A (ja) * | 1988-07-05 | 1990-01-19 | Mitsubishi Electric Corp | プラズマ反応装置 |
JP2670623B2 (ja) * | 1988-09-19 | 1997-10-29 | アネルバ株式会社 | マイクロ波プラズマ処理装置 |
US4996077A (en) * | 1988-10-07 | 1991-02-26 | Texas Instruments Incorporated | Distributed ECR remote plasma processing and apparatus |
US5081398A (en) * | 1989-10-20 | 1992-01-14 | Board Of Trustees Operating Michigan State University | Resonant radio frequency wave coupler apparatus using higher modes |
-
1992
- 1992-01-21 WO PCT/US1992/000498 patent/WO1992021136A1/en active IP Right Grant
- 1992-01-21 DK DK92904619.1T patent/DK0585229T3/da active
- 1992-01-21 JP JP04504602A patent/JP3128239B2/ja not_active Expired - Fee Related
- 1992-01-21 DE DE69204670T patent/DE69204670T2/de not_active Expired - Fee Related
- 1992-01-21 EP EP92904619A patent/EP0585229B1/de not_active Expired - Lifetime
- 1992-01-21 CA CA002102201A patent/CA2102201A1/en not_active Abandoned
- 1992-01-21 AU AU12406/92A patent/AU1240692A/en not_active Abandoned
- 1992-01-21 AT AT92904619T patent/ATE127615T1/de not_active IP Right Cessation
- 1992-01-21 ES ES92904619T patent/ES2078735T3/es not_active Expired - Lifetime
- 1992-01-28 TW TW081100602A patent/TW201367B/zh active
-
1993
- 1993-04-16 US US08/050,726 patent/US5280219A/en not_active Expired - Lifetime
-
1995
- 1995-11-22 GR GR950403274T patent/GR3018156T3/el unknown
Also Published As
Publication number | Publication date |
---|---|
EP0585229B1 (de) | 1995-09-06 |
DE69204670T2 (de) | 1996-04-18 |
WO1992021136A1 (en) | 1992-11-26 |
TW201367B (de) | 1993-03-01 |
ES2078735T3 (es) | 1995-12-16 |
JP3128239B2 (ja) | 2001-01-29 |
US5280219A (en) | 1994-01-18 |
EP0585229A1 (de) | 1994-03-09 |
GR3018156T3 (en) | 1996-02-29 |
DK0585229T3 (da) | 1995-12-27 |
JPH06507522A (ja) | 1994-08-25 |
DE69204670D1 (de) | 1995-10-12 |
CA2102201A1 (en) | 1992-11-22 |
AU1240692A (en) | 1992-12-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
UEP | Publication of translation of european patent specification | ||
REN | Ceased due to non-payment of the annual fee |