ATE127615T1 - Sanftaetz-einheit fuer modulare bearbeitungsanlagen und ecr-plasmaerzeuger fuer eine solche einheit. - Google Patents

Sanftaetz-einheit fuer modulare bearbeitungsanlagen und ecr-plasmaerzeuger fuer eine solche einheit.

Info

Publication number
ATE127615T1
ATE127615T1 AT92904619T AT92904619T ATE127615T1 AT E127615 T1 ATE127615 T1 AT E127615T1 AT 92904619 T AT92904619 T AT 92904619T AT 92904619 T AT92904619 T AT 92904619T AT E127615 T1 ATE127615 T1 AT E127615T1
Authority
AT
Austria
Prior art keywords
unit
plasma
cavity
sanftaetz
plasma generator
Prior art date
Application number
AT92904619T
Other languages
English (en)
Inventor
Ebrahim Ghanbari
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Application granted granted Critical
Publication of ATE127615T1 publication Critical patent/ATE127615T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/16—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields
    • H05H1/18—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields wherein the fields oscillate at very high frequency, e.g. in the microwave range, e.g. using cyclotron resonance

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AT92904619T 1991-05-21 1992-01-21 Sanftaetz-einheit fuer modulare bearbeitungsanlagen und ecr-plasmaerzeuger fuer eine solche einheit. ATE127615T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70345291A 1991-05-21 1991-05-21

Publications (1)

Publication Number Publication Date
ATE127615T1 true ATE127615T1 (de) 1995-09-15

Family

ID=24825449

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92904619T ATE127615T1 (de) 1991-05-21 1992-01-21 Sanftaetz-einheit fuer modulare bearbeitungsanlagen und ecr-plasmaerzeuger fuer eine solche einheit.

Country Status (12)

Country Link
US (1) US5280219A (de)
EP (1) EP0585229B1 (de)
JP (1) JP3128239B2 (de)
AT (1) ATE127615T1 (de)
AU (1) AU1240692A (de)
CA (1) CA2102201A1 (de)
DE (1) DE69204670T2 (de)
DK (1) DK0585229T3 (de)
ES (1) ES2078735T3 (de)
GR (1) GR3018156T3 (de)
TW (1) TW201367B (de)
WO (1) WO1992021136A1 (de)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3362432B2 (ja) 1992-10-31 2003-01-07 ソニー株式会社 プラズマ処理方法及びプラズマ処理装置
DE4242894A1 (de) * 1992-12-18 1994-06-23 Leybold Ag Vorrichtung zur Mehrfacheinspeisung von HF-Leistung in Kathodenkörpern
FR2701797B1 (fr) * 1993-02-18 1995-03-31 Commissariat Energie Atomique Coupleur de transfert d'une puissance micro-onde vers une nappe de plasma et source micro-onde linéaire pour le traitement de surfaces par plasma .
JP3124204B2 (ja) * 1994-02-28 2001-01-15 株式会社東芝 プラズマ処理装置
US5569356A (en) * 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US5669975A (en) * 1996-03-27 1997-09-23 Sony Corporation Plasma producing method and apparatus including an inductively-coupled plasma source
US6163006A (en) * 1998-02-06 2000-12-19 Astex-Plasmaquest, Inc. Permanent magnet ECR plasma source with magnetic field optimization
US6424733B2 (en) 1998-07-20 2002-07-23 Micron Technology, Inc. Method and apparatus for inspecting wafers
RU2152663C1 (ru) * 1998-09-02 2000-07-10 Яфаров Равиль Кяшшафович Способ управления пространственным распределением плотности плазмы в микроволновом источнике плазмы с электронно-циклотронным резонансом
JP3608416B2 (ja) * 1999-02-02 2005-01-12 日新電機株式会社 プラズマ源
US8048806B2 (en) * 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US7196283B2 (en) 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
US8617351B2 (en) * 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US7141757B2 (en) * 2000-03-17 2006-11-28 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent
US20070048882A1 (en) * 2000-03-17 2007-03-01 Applied Materials, Inc. Method to reduce plasma-induced charging damage
US6894245B2 (en) * 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US7220937B2 (en) * 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
US6900596B2 (en) * 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US20030010454A1 (en) * 2000-03-27 2003-01-16 Bailey Andrew D. Method and apparatus for varying a magnetic field to control a volume of a plasma
US7067034B2 (en) 2000-03-27 2006-06-27 Lam Research Corporation Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma
AU2002354093A1 (en) * 2001-12-07 2003-06-17 Tokyo Electron Limited Plasma processing device
TWI283899B (en) * 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US7795153B2 (en) * 2003-05-16 2010-09-14 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters
US7247218B2 (en) 2003-05-16 2007-07-24 Applied Materials, Inc. Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
US7901952B2 (en) * 2003-05-16 2011-03-08 Applied Materials, Inc. Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters
US7452824B2 (en) * 2003-05-16 2008-11-18 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters
US7910013B2 (en) 2003-05-16 2011-03-22 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7470626B2 (en) * 2003-05-16 2008-12-30 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7556718B2 (en) * 2004-06-22 2009-07-07 Tokyo Electron Limited Highly ionized PVD with moving magnetic field envelope for uniform coverage of feature structure and wafer
KR20070048177A (ko) * 2004-06-28 2007-05-08 캠브리지 나노테크 인크. 증착 시스템 및 방법
US7203053B2 (en) 2005-04-07 2007-04-10 American Radionic Company, Inc. Capacitor for multiple replacement applications
US7423861B2 (en) 2005-04-07 2008-09-09 American Radionic Company, Inc. Capacitor with multiple elements for multiple replacement applications
US11183338B2 (en) 2005-04-07 2021-11-23 Amrad Manufacturing, Llc Capacitor with multiple elements for multiple replacement applications
US11183336B2 (en) 2005-04-07 2021-11-23 Amrad Manufacturing, Llc Capacitor with multiple elements for multiple replacement applications
US9412521B2 (en) 2005-04-07 2016-08-09 American Radionic Company, Inc. Capacitor with multiple elements for multiple replacement applications
US11183337B1 (en) 2005-04-07 2021-11-23 Amrad Manufacturing, Llc Capacitor with multiple elements for multiple replacement applications
US7359177B2 (en) * 2005-05-10 2008-04-15 Applied Materials, Inc. Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
USD818959S1 (en) 2005-12-23 2018-05-29 American Radionic Company, Inc. Capacitor
US7476291B2 (en) * 2006-09-28 2009-01-13 Lam Research Corporation High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
US7952854B2 (en) 2006-12-29 2011-05-31 American Radionic Company, Inc. Electrolytic capacitor
US8456795B2 (en) 2009-11-13 2013-06-04 American Radionic Company, Inc. Hard start kit for multiple replacement applications
JP5606063B2 (ja) * 2009-12-28 2014-10-15 東京エレクトロン株式会社 プラズマ処理装置
GB201021865D0 (en) * 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
US9318261B2 (en) 2013-05-21 2016-04-19 American Radionic Company, Inc. Power factor correction capacitors
US10163609B2 (en) * 2016-12-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma generation for ion implanter
US11195663B2 (en) 2017-05-12 2021-12-07 Amrad Manufacturing, Llc Capacitor with multiple elements for multiple replacement applications
CN208608067U (zh) 2017-05-12 2019-03-15 美国射电电子公司 一种提供多个可选择电容值的装置
US11424077B1 (en) * 2017-12-13 2022-08-23 Amrad Manufacturing, Llc Hard start kit for multiple replacement applications
US10497518B1 (en) 2017-12-13 2019-12-03 American Radionic Company, Inc. Hard start kit for multiple replacement applications
JP6579635B1 (ja) * 2018-09-12 2019-09-25 春日電機株式会社 除電装置及びプラズマ発生装置
USD906969S1 (en) 2018-12-13 2021-01-05 American Radionic Company, Inc. Magnet for attachment to a capacitor
US10586655B1 (en) 2018-12-28 2020-03-10 American Radionic Company, Inc. Capacitor with multiple elements for multiple replacement applications
US12125645B1 (en) 2019-06-07 2024-10-22 Amrad Manufacturing, Llc Capacitor with multiple elements for multiple replacement applications
USD1054986S1 (en) 2019-06-25 2024-12-24 Amrad Manufacturing, Llc Capacitor
USD906247S1 (en) 2019-07-11 2020-12-29 American Radionic Company, Inc. Capacitor
USD1054379S1 (en) 2020-11-24 2024-12-17 Amrad Manufacturing, Llc Capacitor with relay
CA3157689A1 (en) 2021-04-30 2022-10-30 Amrad Manufacturing, Llc Hard start kit for multiple replacement applications
US12437918B2 (en) 2023-09-22 2025-10-07 Amrad Manufacturing, Llc Capacitor mount
WO2025237509A1 (en) * 2024-05-14 2025-11-20 Evatec Ag Substrate treatment apparatus allowing for an alternative cleaning, method of cleaning and use of the apparatus
CN120762289B (zh) * 2025-09-08 2025-11-04 四川省工程装备设计研究院有限责任公司 强流ecr质子源的高频微波驱动功率自适应控制方法及系统

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55131175A (en) * 1979-03-30 1980-10-11 Toshiba Corp Surface treatment apparatus with microwave plasma
FR2475798A1 (fr) * 1980-02-13 1981-08-14 Commissariat Energie Atomique Procede et dispositif de production d'ions lourds fortement charges et une application mettant en oeuvre le procede
FR2546358B1 (fr) * 1983-05-20 1985-07-05 Commissariat Energie Atomique Source d'ions a resonance cyclotronique des electrons
FR2551302B1 (fr) * 1983-08-30 1986-03-14 Commissariat Energie Atomique Structure ferromagnetique d'une source d'ions creee par des aimants permanents et des solenoides
FR2556498B1 (fr) * 1983-12-07 1986-09-05 Commissariat Energie Atomique Source d'ions multicharges a plusieurs zones de resonance cyclotronique electronique
DE3580953D1 (de) * 1984-08-31 1991-01-31 Anelva Corp Entladungsvorrichtung.
FR2583250B1 (fr) * 1985-06-07 1989-06-30 France Etat Procede et dispositif d'excitation d'un plasma par micro-ondes a la resonance cyclotronique electronique
JPS6276137A (ja) * 1985-09-30 1987-04-08 Hitachi Ltd イオン源
JPH0654644B2 (ja) * 1985-10-04 1994-07-20 株式会社日立製作所 イオン源
DE3729347A1 (de) * 1986-09-05 1988-03-17 Mitsubishi Electric Corp Plasmaprozessor
JP2631650B2 (ja) * 1986-12-05 1997-07-16 アネルバ株式会社 真空装置
CA1301239C (en) * 1987-03-16 1992-05-19 Hans Veltrop Method and arrangement for mechanically moving of a magnetic field generating device in a cathode arc discharge evaporating device
DE3810197A1 (de) * 1987-03-27 1988-10-13 Mitsubishi Electric Corp Plasma-bearbeitungseinrichtung
JPS63244619A (ja) * 1987-03-30 1988-10-12 Sumitomo Metal Ind Ltd プラズマ装置
KR880013424A (ko) * 1987-04-08 1988-11-30 미타 가츠시게 플라즈머 장치
US4866346A (en) * 1987-06-22 1989-09-12 Applied Science & Technology, Inc. Microwave plasma generator
US4778561A (en) * 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source
US4970435A (en) * 1987-12-09 1990-11-13 Tel Sagami Limited Plasma processing apparatus
US5053678A (en) * 1988-03-16 1991-10-01 Hitachi, Ltd. Microwave ion source
JPH0216732A (ja) * 1988-07-05 1990-01-19 Mitsubishi Electric Corp プラズマ反応装置
JP2670623B2 (ja) * 1988-09-19 1997-10-29 アネルバ株式会社 マイクロ波プラズマ処理装置
US4996077A (en) * 1988-10-07 1991-02-26 Texas Instruments Incorporated Distributed ECR remote plasma processing and apparatus
US5081398A (en) * 1989-10-20 1992-01-14 Board Of Trustees Operating Michigan State University Resonant radio frequency wave coupler apparatus using higher modes

Also Published As

Publication number Publication date
EP0585229A1 (de) 1994-03-09
CA2102201A1 (en) 1992-11-22
DE69204670T2 (de) 1996-04-18
WO1992021136A1 (en) 1992-11-26
JPH06507522A (ja) 1994-08-25
GR3018156T3 (en) 1996-02-29
AU1240692A (en) 1992-12-30
DE69204670D1 (de) 1995-10-12
TW201367B (de) 1993-03-01
ES2078735T3 (es) 1995-12-16
EP0585229B1 (de) 1995-09-06
JP3128239B2 (ja) 2001-01-29
US5280219A (en) 1994-01-18
DK0585229T3 (da) 1995-12-27

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