DE69500565T2 - Plasmabearbeitungsvorrichtung - Google Patents
PlasmabearbeitungsvorrichtungInfo
- Publication number
- DE69500565T2 DE69500565T2 DE69500565T DE69500565T DE69500565T2 DE 69500565 T2 DE69500565 T2 DE 69500565T2 DE 69500565 T DE69500565 T DE 69500565T DE 69500565 T DE69500565 T DE 69500565T DE 69500565 T2 DE69500565 T2 DE 69500565T2
- Authority
- DE
- Germany
- Prior art keywords
- processing device
- plasma processing
- plasma
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2932594 | 1994-02-28 | ||
JP07034110A JP3124204B2 (ja) | 1994-02-28 | 1995-02-22 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69500565D1 DE69500565D1 (de) | 1997-09-25 |
DE69500565T2 true DE69500565T2 (de) | 1998-03-12 |
Family
ID=26367512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69500565T Expired - Lifetime DE69500565T2 (de) | 1994-02-28 | 1995-02-28 | Plasmabearbeitungsvorrichtung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5717294A (de) |
EP (1) | EP0669637B1 (de) |
JP (1) | JP3124204B2 (de) |
KR (1) | KR0159197B1 (de) |
DE (1) | DE69500565T2 (de) |
TW (1) | TW347553B (de) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6034346A (en) | 1995-05-19 | 2000-03-07 | Hitachi, Ltd. | Method and apparatus for plasma processing apparatus |
US6902683B1 (en) | 1996-03-01 | 2005-06-07 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method |
TW335517B (en) * | 1996-03-01 | 1998-07-01 | Hitachi Ltd | Apparatus and method for processing plasma |
TW351825B (en) * | 1996-09-12 | 1999-02-01 | Tokyo Electron Ltd | Plasma process device |
US6113731A (en) * | 1997-01-02 | 2000-09-05 | Applied Materials, Inc. | Magnetically-enhanced plasma chamber with non-uniform magnetic field |
JP3582287B2 (ja) | 1997-03-26 | 2004-10-27 | 株式会社日立製作所 | エッチング装置 |
SE511139C2 (sv) * | 1997-11-20 | 1999-08-09 | Hana Barankova | Plasmabearbetningsapparat med vridbara magneter |
JP3252780B2 (ja) * | 1998-01-16 | 2002-02-04 | 日本電気株式会社 | シリコン層のエッチング方法 |
DE19827461A1 (de) * | 1998-06-19 | 1999-12-23 | Leybold Systems Gmbh | Vorrichtung zum Beschichten von Substraten in einer Vakuumkammer |
JP4066214B2 (ja) * | 1998-07-24 | 2008-03-26 | 財団法人国際科学振興財団 | プラズマプロセス装置 |
JP3298528B2 (ja) * | 1998-12-10 | 2002-07-02 | 日本電気株式会社 | 回路設計方法および装置、情報記憶媒体、集積回路装置 |
US6237527B1 (en) | 1999-08-06 | 2001-05-29 | Axcelis Technologies, Inc. | System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate |
JP3892996B2 (ja) * | 1999-09-02 | 2007-03-14 | 東京エレクトロン株式会社 | マグネトロンプラズマ処理装置 |
US8617351B2 (en) * | 2002-07-09 | 2013-12-31 | Applied Materials, Inc. | Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction |
US20070048882A1 (en) * | 2000-03-17 | 2007-03-01 | Applied Materials, Inc. | Method to reduce plasma-induced charging damage |
US8048806B2 (en) * | 2000-03-17 | 2011-11-01 | Applied Materials, Inc. | Methods to avoid unstable plasma states during a process transition |
US20030010454A1 (en) * | 2000-03-27 | 2003-01-16 | Bailey Andrew D. | Method and apparatus for varying a magnetic field to control a volume of a plasma |
US7067034B2 (en) | 2000-03-27 | 2006-06-27 | Lam Research Corporation | Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma |
US6514378B1 (en) * | 2000-03-31 | 2003-02-04 | Lam Research Corporation | Method for improving uniformity and reducing etch rate variation of etching polysilicon |
JP2001338912A (ja) * | 2000-05-29 | 2001-12-07 | Tokyo Electron Ltd | プラズマ処理装置および処理方法 |
US7922865B2 (en) | 2000-09-01 | 2011-04-12 | Shin-Etsu Chemical Co., Ltd. | Magnetic field generator for magnetron plasma, and plasma etching apparatus and method comprising the magnetic field generator |
KR100403616B1 (ko) * | 2001-01-03 | 2003-10-30 | 삼성전자주식회사 | 플라즈마 장치에 의한 플라즈마 처리 공정의 시뮬레이션방법 |
JP4009087B2 (ja) * | 2001-07-06 | 2007-11-14 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置における磁気発生装置、半導体製造装置および磁場強度制御方法 |
US7374636B2 (en) * | 2001-07-06 | 2008-05-20 | Applied Materials, Inc. | Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor |
JP4657521B2 (ja) * | 2001-08-28 | 2011-03-23 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2003309107A (ja) * | 2002-04-12 | 2003-10-31 | Tokyo Electron Ltd | 積層膜のエッチング方法 |
US20040028837A1 (en) * | 2002-06-28 | 2004-02-12 | Tokyo Electron Limited | Method and apparatus for plasma processing |
TWI283899B (en) * | 2002-07-09 | 2007-07-11 | Applied Materials Inc | Capacitively coupled plasma reactor with magnetic plasma control |
WO2004019398A1 (ja) * | 2002-08-21 | 2004-03-04 | Shin-Etsu Chemical Co., Ltd. | マグネトロンプラズマ用磁場発生装置 |
US7458335B1 (en) | 2002-10-10 | 2008-12-02 | Applied Materials, Inc. | Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils |
US7422654B2 (en) * | 2003-02-14 | 2008-09-09 | Applied Materials, Inc. | Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor |
WO2005028697A1 (en) * | 2003-09-12 | 2005-03-31 | Applied Process Technologies, Inc. | Magnetic mirror plasma source and method using same |
US7178126B2 (en) * | 2004-01-21 | 2007-02-13 | Oki Electric Industry Co., Ltd. | Method of protecting a semiconductor integrated circuit from plasma damage |
US7084573B2 (en) * | 2004-03-05 | 2006-08-01 | Tokyo Electron Limited | Magnetically enhanced capacitive plasma source for ionized physical vapor deposition |
US8017029B2 (en) * | 2006-10-30 | 2011-09-13 | Applied Materials, Inc. | Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside |
US7976671B2 (en) | 2006-10-30 | 2011-07-12 | Applied Materials, Inc. | Mask etch plasma reactor with variable process gas distribution |
US9218944B2 (en) * | 2006-10-30 | 2015-12-22 | Applied Materials, Inc. | Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors |
US7967930B2 (en) * | 2006-10-30 | 2011-06-28 | Applied Materials, Inc. | Plasma reactor for processing a workpiece and having a tunable cathode |
US20080099450A1 (en) * | 2006-10-30 | 2008-05-01 | Applied Materials, Inc. | Mask etch plasma reactor with backside optical sensors and multiple frequency control of etch distribution |
US8002946B2 (en) * | 2006-10-30 | 2011-08-23 | Applied Materials, Inc. | Mask etch plasma reactor with cathode providing a uniform distribution of etch rate |
US8012366B2 (en) * | 2006-10-30 | 2011-09-06 | Applied Materials, Inc. | Process for etching a transparent workpiece including backside endpoint detection steps |
WO2008072997A1 (fr) | 2006-12-15 | 2008-06-19 | 'nauchnoe I Tekhnologicheskoe Oborudovanie' Limited | Installation d'attaque au plasma de plaques semi-conductrices et/ou de formation de films diélectriques sur celles-ci |
US8773020B2 (en) * | 2010-10-22 | 2014-07-08 | Applied Materials, Inc. | Apparatus for forming a magnetic field and methods of use thereof |
US9269546B2 (en) | 2010-10-22 | 2016-02-23 | Applied Materials, Inc. | Plasma reactor with electron beam plasma source having a uniform magnetic field |
JP6136613B2 (ja) | 2012-09-21 | 2017-05-31 | 東京エレクトロン株式会社 | プラズマ処理方法 |
WO2020096885A1 (en) * | 2018-11-05 | 2020-05-14 | Applied Materials, Inc. | Magnetic housing systems |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DD204109A1 (de) * | 1981-08-07 | 1983-11-16 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zum reaktiven ionenaetzen und zur plasmaoxydation |
US4740268A (en) * | 1987-05-04 | 1988-04-26 | Motorola Inc. | Magnetically enhanced plasma system |
CA2102201A1 (en) * | 1991-05-21 | 1992-11-22 | Ebrahim Ghanbari | Cluster tool soft etch module and ecr plasma generator therefor |
KR100297358B1 (ko) * | 1991-07-23 | 2001-11-30 | 히가시 데쓰로 | 플라즈마에칭장치 |
JP3311064B2 (ja) * | 1992-03-26 | 2002-08-05 | 株式会社東芝 | プラズマ生成装置、表面処理装置および表面処理方法 |
US5444207A (en) * | 1992-03-26 | 1995-08-22 | Kabushiki Kaisha Toshiba | Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field |
JP3238200B2 (ja) * | 1992-07-17 | 2001-12-10 | 株式会社東芝 | 基体処理装置及び半導体素子製造方法 |
EP0574100B1 (de) * | 1992-04-16 | 1999-05-12 | Mitsubishi Jukogyo Kabushiki Kaisha | Verfahren und Vorrichtung zur Plasma-unterstützten chemischen Dampfphasen-Abscheidung |
-
1995
- 1995-02-22 JP JP07034110A patent/JP3124204B2/ja not_active Expired - Lifetime
- 1995-02-27 US US08/395,503 patent/US5717294A/en not_active Expired - Lifetime
- 1995-02-28 EP EP95301304A patent/EP0669637B1/de not_active Expired - Lifetime
- 1995-02-28 KR KR1019950004076A patent/KR0159197B1/ko active IP Right Grant
- 1995-02-28 TW TW084101942A patent/TW347553B/zh not_active IP Right Cessation
- 1995-02-28 DE DE69500565T patent/DE69500565T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0669637B1 (de) | 1997-08-20 |
EP0669637A1 (de) | 1995-08-30 |
DE69500565D1 (de) | 1997-09-25 |
JP3124204B2 (ja) | 2001-01-15 |
US5717294A (en) | 1998-02-10 |
KR0159197B1 (ko) | 1999-02-01 |
JPH07288195A (ja) | 1995-10-31 |
TW347553B (en) | 1998-12-11 |
KR950025904A (ko) | 1995-09-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: TOKYO ELECTRON LTD., TOKIO/TOKYO, JP KABUSHIKI KAI |
|
8339 | Ceased/non-payment of the annual fee | ||
8370 | Indication of lapse of patent is to be deleted |