DE69405080T2 - Plasmabearbeitungsgerät - Google Patents

Plasmabearbeitungsgerät

Info

Publication number
DE69405080T2
DE69405080T2 DE69405080T DE69405080T DE69405080T2 DE 69405080 T2 DE69405080 T2 DE 69405080T2 DE 69405080 T DE69405080 T DE 69405080T DE 69405080 T DE69405080 T DE 69405080T DE 69405080 T2 DE69405080 T2 DE 69405080T2
Authority
DE
Germany
Prior art keywords
processing device
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69405080T
Other languages
English (en)
Other versions
DE69405080D1 (de
Inventor
Satoshi Otani
Hiroya Kirimura
Hajime Kuwahara
Takao Tabata
Takahiro Nakahigashi
Hiroshi Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP31308693A external-priority patent/JP3282326B2/ja
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Application granted granted Critical
Publication of DE69405080D1 publication Critical patent/DE69405080D1/de
Publication of DE69405080T2 publication Critical patent/DE69405080T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
DE69405080T 1993-12-14 1994-12-14 Plasmabearbeitungsgerät Expired - Fee Related DE69405080T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31308693A JP3282326B2 (ja) 1993-04-01 1993-12-14 プラズマ処理装置

Publications (2)

Publication Number Publication Date
DE69405080D1 DE69405080D1 (de) 1997-09-25
DE69405080T2 true DE69405080T2 (de) 1998-01-08

Family

ID=18037016

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69405080T Expired - Fee Related DE69405080T2 (de) 1993-12-14 1994-12-14 Plasmabearbeitungsgerät

Country Status (3)

Country Link
US (1) US5556474A (de)
EP (1) EP0658918B1 (de)
DE (1) DE69405080T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968379A (en) * 1995-07-14 1999-10-19 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability and related methods
US6342135B1 (en) * 1995-11-02 2002-01-29 Taiwan Semiconductor Manufacturing Company Sputter etching chamber with improved uniformity
US6189482B1 (en) 1997-02-12 2001-02-20 Applied Materials, Inc. High temperature, high flow rate chemical vapor deposition apparatus and related methods
US6079355A (en) * 1997-02-11 2000-06-27 United Microelectronics Corp. Alignment aid for an electrode plate assembly
JPH10330932A (ja) * 1997-05-28 1998-12-15 Anelva Corp スパッタリング装置
JP3129265B2 (ja) * 1997-11-28 2001-01-29 日新電機株式会社 薄膜形成装置
US6892669B2 (en) * 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
US6184489B1 (en) * 1998-04-13 2001-02-06 Nec Corporation Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
US6436253B1 (en) * 1998-05-20 2002-08-20 Taiwan Semiconductor Manufacturing Company Sputter etching chamber with improved uniformity
JP2000091247A (ja) * 1998-09-14 2000-03-31 Tokyo Electron Ltd プラズマ処理装置
US6893532B1 (en) * 1999-06-29 2005-05-17 Tohoku Techno Arch Co., Ltd. Method and apparatus for processing fine particle dust in plasma
KR100419756B1 (ko) * 2000-06-23 2004-02-21 아넬바 가부시기가이샤 박막 형성 장치
JP4510242B2 (ja) 2000-07-11 2010-07-21 キヤノン株式会社 薄膜形成方法
JP4791637B2 (ja) * 2001-01-22 2011-10-12 キヤノンアネルバ株式会社 Ｃｖｄ装置とこれを用いた処理方法
US7378127B2 (en) * 2001-03-13 2008-05-27 Micron Technology, Inc. Chemical vapor deposition methods
TW573053B (en) * 2001-09-10 2004-01-21 Anelva Corp Surface processing apparatus
JP2003234331A (ja) * 2001-12-05 2003-08-22 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
US7229666B2 (en) * 2002-01-22 2007-06-12 Micron Technology, Inc. Chemical vapor deposition method
US6787185B2 (en) * 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
US7468104B2 (en) * 2002-05-17 2008-12-23 Micron Technology, Inc. Chemical vapor deposition apparatus and deposition method
US6887521B2 (en) * 2002-08-15 2005-05-03 Micron Technology, Inc. Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
US8608851B2 (en) 2005-10-14 2013-12-17 Advanced Micro-Fabrication Equipment, Inc. Asia Plasma confinement apparatus, and method for confining a plasma
WO2009031520A1 (ja) * 2007-09-04 2009-03-12 Sharp Kabushiki Kaisha プラズマ処理装置およびプラズマ処理方法ならびに半導体素子
JP5347294B2 (ja) * 2007-09-12 2013-11-20 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5800969B1 (ja) * 2014-08-27 2015-10-28 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム、記録媒体
KR102548259B1 (ko) 2016-12-27 2023-06-27 에바텍 아크티엔게젤샤프트 Rf 용량성 결합 듀얼 주파수 에칭 반응기
US20240047185A1 (en) * 2022-08-03 2024-02-08 Applied Materials, Inc. Shared rps clean and bypass delivery architecture

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS592374B2 (ja) * 1979-01-30 1984-01-18 松下電子工業株式会社 プラズマ気相成長装置
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
DE3521053A1 (de) * 1985-06-12 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum aufbringen duenner schichten auf ein substrat
US4756193A (en) * 1987-09-11 1988-07-12 Delco Electronics Corporation Pressure sensor
JP2503537B2 (ja) * 1987-10-19 1996-06-05 オムロン株式会社 イメ―ジスキャナ
DE4039930A1 (de) * 1990-12-14 1992-06-17 Leybold Ag Vorrichtung fuer plasmabehandlung
DE4109619C1 (de) * 1991-03-23 1992-08-06 Leybold Ag, 6450 Hanau, De
DE4140862A1 (de) * 1991-12-11 1993-06-17 Leybold Ag Kathodenzerstaeubungsanlage
KR960000190B1 (ko) * 1992-11-09 1996-01-03 엘지전자주식회사 반도체 제조방법 및 그 장치
IL107827A0 (en) * 1992-12-08 1994-04-12 Hughes Aircraft Co Plasma pressure control assembly
DE4301189C2 (de) * 1993-01-19 2000-12-14 Leybold Ag Vorrichtung zum Beschichten von Substraten
US5352294A (en) * 1993-01-28 1994-10-04 White John M Alignment of a shadow frame and large flat substrates on a support
JP3282326B2 (ja) * 1993-04-01 2002-05-13 日新電機株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
EP0658918B1 (de) 1997-08-20
DE69405080D1 (de) 1997-09-25
US5556474A (en) 1996-09-17
EP0658918A3 (de) 1995-07-05
EP0658918A2 (de) 1995-06-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee