DE69738241D1 - RF Plasmabearbeitungsvorrichtung - Google Patents

RF Plasmabearbeitungsvorrichtung

Info

Publication number
DE69738241D1
DE69738241D1 DE69738241T DE69738241T DE69738241D1 DE 69738241 D1 DE69738241 D1 DE 69738241D1 DE 69738241 T DE69738241 T DE 69738241T DE 69738241 T DE69738241 T DE 69738241T DE 69738241 D1 DE69738241 D1 DE 69738241D1
Authority
DE
Germany
Prior art keywords
processing device
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69738241T
Other languages
English (en)
Other versions
DE69738241T2 (de
Inventor
John P Holland
Michael S Barnes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/661,203 external-priority patent/US5800619A/en
Priority claimed from US08/662,732 external-priority patent/US5759280A/en
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE69738241D1 publication Critical patent/DE69738241D1/de
Publication of DE69738241T2 publication Critical patent/DE69738241T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE1997638241 1996-06-10 1997-06-09 RF Plasmabearbeitungsvorrichtung Expired - Lifetime DE69738241T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US661203 1996-06-10
US08/661,203 US5800619A (en) 1996-06-10 1996-06-10 Vacuum plasma processor having coil with minimum magnetic field in its center
US08/662,732 US5759280A (en) 1996-06-10 1996-06-10 Inductively coupled source for deriving substantially uniform plasma flux
US662732 1996-06-10

Publications (2)

Publication Number Publication Date
DE69738241D1 true DE69738241D1 (de) 2007-12-06
DE69738241T2 DE69738241T2 (de) 2008-02-14

Family

ID=27098257

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1997638241 Expired - Lifetime DE69738241T2 (de) 1996-06-10 1997-06-09 RF Plasmabearbeitungsvorrichtung

Country Status (5)

Country Link
EP (4) EP1608000A3 (de)
JP (1) JP4540758B2 (de)
KR (1) KR100558182B1 (de)
CA (1) CA2207154A1 (de)
DE (1) DE69738241T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6035868A (en) * 1997-03-31 2000-03-14 Lam Research Corporation Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber
US6028395A (en) * 1997-09-16 2000-02-22 Lam Research Corporation Vacuum plasma processor having coil with added conducting segments to its peripheral part
US6506287B1 (en) * 1998-03-16 2003-01-14 Applied Materials, Inc. Overlap design of one-turn coil
US6155199A (en) * 1998-03-31 2000-12-05 Lam Research Corporation Parallel-antenna transformer-coupled plasma generation system
US6164241A (en) * 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
US6660134B1 (en) * 1998-07-10 2003-12-09 Applied Materials, Inc. Feedthrough overlap coil
US6237526B1 (en) * 1999-03-26 2001-05-29 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
US6229264B1 (en) * 1999-03-31 2001-05-08 Lam Research Corporation Plasma processor with coil having variable rf coupling
US6319355B1 (en) * 1999-06-30 2001-11-20 Lam Research Corporation Plasma processor with coil responsive to variable amplitude rf envelope
US6257168B1 (en) * 1999-06-30 2001-07-10 Lam Research Corporation Elevated stationary uniformity ring design
US6518705B2 (en) * 1999-11-15 2003-02-11 Lam Research Corporation Method and apparatus for producing uniform process rates
US6744213B2 (en) * 1999-11-15 2004-06-01 Lam Research Corporation Antenna for producing uniform process rates
US6320320B1 (en) 1999-11-15 2001-11-20 Lam Research Corporation Method and apparatus for producing uniform process rates
JP2002008996A (ja) 2000-06-23 2002-01-11 Mitsubishi Heavy Ind Ltd 給電アンテナ及び給電方法
US6531029B1 (en) * 2000-06-30 2003-03-11 Lam Research Corporation Vacuum plasma processor apparatus and method
US7464662B2 (en) * 2004-01-28 2008-12-16 Tokyo Electron Limited Compact, distributed inductive element for large scale inductively-coupled plasma sources
JP2006221852A (ja) * 2005-02-08 2006-08-24 Canon Anelva Corp 誘導結合型プラズマ発生装置
TWI398926B (zh) * 2006-04-25 2013-06-11 Gen Co Ltd 具有與磁通通道耦合之電漿室的電漿反應器
KR100883561B1 (ko) 2006-10-10 2009-02-27 주식회사 뉴파워 프라즈마 자속 채널에 결합된 기판 처리 챔버를 구비한 플라즈마반응기
US7504041B2 (en) * 2006-05-03 2009-03-17 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator
CN103347360B (zh) * 2006-11-28 2016-01-20 莎姆克株式会社 等离子处理装置
JP5723130B2 (ja) * 2010-09-28 2015-05-27 東京エレクトロン株式会社 プラズマ処理装置
JP5800532B2 (ja) * 2011-03-03 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5781349B2 (ja) 2011-03-30 2015-09-24 東京エレクトロン株式会社 プラズマ処理装置
JP6232953B2 (ja) * 2013-11-11 2017-11-22 富士通セミコンダクター株式会社 半導体装置の製造装置および半導体装置の製造方法
WO2015080516A1 (ko) * 2013-11-29 2015-06-04 서울대학교산학협력단 자장 제어를 통한 플라즈마 쉐이핑이 가능한 플라즈마 처리 장치
KR101629214B1 (ko) * 2013-11-29 2016-06-13 서울대학교산학협력단 자장 제어를 통한 플라즈마 쉐이핑이 가능한 플라즈마 처리 장치
JP6053881B2 (ja) * 2015-07-15 2016-12-27 東京エレクトロン株式会社 プラズマ処理装置
TW202143800A (zh) * 2020-05-11 2021-11-16 洪再和 分離式遠端電漿源設備
CN111785605A (zh) * 2020-06-23 2020-10-16 北京北方华创微电子装备有限公司 一种线圈结构及半导体加工设备
CN115604899A (zh) * 2021-07-09 2023-01-13 北京北方华创微电子装备有限公司（Cn） 用于产生等离子体的线圈结构及半导体工艺设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62213303A (ja) * 1986-03-13 1987-09-19 Toyo Commun Equip Co Ltd アンテナ装置
EP0379828B1 (de) * 1989-01-25 1995-09-27 International Business Machines Corporation Radiofrequenzinduktion/Mehrpolplasma-Bearbeitungsvorrichtung
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5226967A (en) * 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
JP3254069B2 (ja) * 1993-01-12 2002-02-04 東京エレクトロン株式会社 プラズマ装置
US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
US5540824A (en) * 1994-07-18 1996-07-30 Applied Materials Plasma reactor with multi-section RF coil and isolated conducting lid
JPH0850998A (ja) * 1994-08-04 1996-02-20 Kokusai Electric Co Ltd プラズマ処理装置
JP3642806B2 (ja) * 1994-08-24 2005-04-27 松下電器産業株式会社 プラズマ処理方法及びプラズマ処理装置
EP0710055B1 (de) * 1994-10-31 1999-06-23 Applied Materials, Inc. Plasmareaktoren zur Halbleiterscheibenbehandlung
JP3153743B2 (ja) * 1995-08-31 2001-04-09 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
CA2207154A1 (en) 1997-12-10
KR100558182B1 (ko) 2006-07-27
DE69738241T2 (de) 2008-02-14
EP1204134A3 (de) 2002-05-15
EP0813227A3 (de) 1998-02-04
EP1204134A2 (de) 2002-05-08
EP1239511A1 (de) 2002-09-11
KR980005069A (ko) 1998-03-30
JP4540758B2 (ja) 2010-09-08
EP1204134B1 (de) 2007-10-24
EP1608000A2 (de) 2005-12-21
JPH10125497A (ja) 1998-05-15
EP0813227A2 (de) 1997-12-17
EP1608000A3 (de) 2007-11-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition