DE69401549D1 - Plasma-Behandlungsgerät - Google Patents

Plasma-Behandlungsgerät

Info

Publication number
DE69401549D1
DE69401549D1 DE69401549T DE69401549T DE69401549D1 DE 69401549 D1 DE69401549 D1 DE 69401549D1 DE 69401549 T DE69401549 T DE 69401549T DE 69401549 T DE69401549 T DE 69401549T DE 69401549 D1 DE69401549 D1 DE 69401549D1
Authority
DE
Germany
Prior art keywords
treatment device
plasma treatment
plasma
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69401549T
Other languages
English (en)
Other versions
DE69401549T2 (de
Inventor
Mei Chang
Leung Cissy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69401549D1 publication Critical patent/DE69401549D1/de
Publication of DE69401549T2 publication Critical patent/DE69401549T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H15/00—Methods or devices for acceleration of charged particles not otherwise provided for, e.g. wakefield accelerators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
DE69401549T 1993-07-28 1994-07-28 Plasma-Behandlungsgerät Expired - Fee Related DE69401549T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/098,538 US5449410A (en) 1993-07-28 1993-07-28 Plasma processing apparatus

Publications (2)

Publication Number Publication Date
DE69401549D1 true DE69401549D1 (de) 1997-03-06
DE69401549T2 DE69401549T2 (de) 1997-05-22

Family

ID=22269747

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69401549T Expired - Fee Related DE69401549T2 (de) 1993-07-28 1994-07-28 Plasma-Behandlungsgerät

Country Status (5)

Country Link
US (1) US5449410A (de)
EP (1) EP0637055B1 (de)
JP (1) JPH07166362A (de)
KR (1) KR100198862B1 (de)
DE (1) DE69401549T2 (de)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
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US7264850B1 (en) 1992-12-28 2007-09-04 Semiconductor Energy Laboratory Co., Ltd. Process for treating a substrate with a plasma
US6001431A (en) * 1992-12-28 1999-12-14 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating a magnetic recording medium
US5647911A (en) * 1993-12-14 1997-07-15 Sony Corporation Gas diffuser plate assembly and RF electrode
US5589002A (en) * 1994-03-24 1996-12-31 Applied Materials, Inc. Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
US5628829A (en) 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
KR960002534A (ko) * 1994-06-07 1996-01-26 이노우에 아키라 감압·상압 처리장치
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US5523261A (en) * 1995-02-28 1996-06-04 Micron Technology, Inc. Method of cleaning high density inductively coupled plasma chamber using capacitive coupling
US5855679A (en) * 1995-03-30 1999-01-05 Nec Corporation Semiconductor manufacturing apparatus
US5569356A (en) * 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US5968324A (en) * 1995-12-05 1999-10-19 Applied Materials, Inc. Method and apparatus for depositing antireflective coating
JPH09180897A (ja) * 1995-12-12 1997-07-11 Applied Materials Inc 高密度プラズマリアクタのためのガス供給装置
US6024799A (en) * 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US6123802A (en) * 1997-09-23 2000-09-26 Micron Technology, Inc. Method and apparatus for preventing plasma formation
JP4151862B2 (ja) * 1998-02-26 2008-09-17 キヤノンアネルバ株式会社 Ｃｖｄ装置
US6892669B2 (en) * 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
JPH11297800A (ja) * 1998-04-09 1999-10-29 Nec Kyushu Ltd 半導体装置製造用装置
US6182603B1 (en) * 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6166898A (en) * 1998-10-30 2000-12-26 Promos Technologies, Inc. Plasma chamber wafer clamping ring with erosion resistive tips
JP4055880B2 (ja) * 1999-06-02 2008-03-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理監視用窓部材及びプラズマ処理装置用の電極板
JP4378806B2 (ja) * 1999-09-28 2009-12-09 日本電気株式会社 Ｃｖｄ装置およびその基板洗浄方法
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6537419B1 (en) 2000-04-26 2003-03-25 David W. Kinnard Gas distribution plate assembly for providing laminar gas flow across the surface of a substrate
US6635117B1 (en) * 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
US6461435B1 (en) * 2000-06-22 2002-10-08 Applied Materials, Inc. Showerhead with reduced contact area
KR100419756B1 (ko) * 2000-06-23 2004-02-21 아넬바 가부시기가이샤 박막 형성 장치
DE10134806A1 (de) * 2000-08-10 2002-06-13 Stratos Lightwave Inc N D Ges Dampfphasenreaktionsvorrichtung mit Diaphragma für variable Stromverteilung
JP4602532B2 (ja) * 2000-11-10 2010-12-22 東京エレクトロン株式会社 プラズマ処理装置
US20040127033A1 (en) * 2001-01-22 2004-07-01 Koichi Takatsuki Plasma processing device and plasma processing method
JP4791637B2 (ja) 2001-01-22 2011-10-12 キヤノンアネルバ株式会社 Ｃｖｄ装置とこれを用いた処理方法
KR20020078680A (ko) * 2001-04-07 2002-10-19 주식회사 기림세미텍 에칭장치용 전극 어셈블리
US20040129218A1 (en) * 2001-12-07 2004-07-08 Toshiki Takahashi Exhaust ring mechanism and plasma processing apparatus using the same
KR100472410B1 (ko) * 2002-03-29 2005-03-10 삼성전자주식회사 반도체 기판을 가공하기 위한 전극 조립체 및 이를 갖는가공장치
US20030185729A1 (en) * 2002-03-29 2003-10-02 Ho Ko Electrode assembly for processing a semiconductor substrate and processing apparatus having the same
US7543547B1 (en) * 2002-07-31 2009-06-09 Lam Research Corporation Electrode assembly for plasma processing apparatus
US20060254512A1 (en) * 2003-02-28 2006-11-16 Tokyo Electron Limited Apparatus for attachment of semiconductor hardware
US7892357B2 (en) * 2004-01-12 2011-02-22 Axcelis Technologies, Inc. Gas distribution plate assembly for plasma reactors
JP4312063B2 (ja) * 2004-01-21 2009-08-12 日本エー・エス・エム株式会社 薄膜製造装置及びその方法
JP4698251B2 (ja) * 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US20050241579A1 (en) * 2004-04-30 2005-11-03 Russell Kidd Face shield to improve uniformity of blanket CVD processes
US7641762B2 (en) * 2005-09-02 2010-01-05 Applied Materials, Inc. Gas sealing skirt for suspended showerhead in process chamber
US20070163498A1 (en) * 2006-01-13 2007-07-19 Randall Clark Gas dispersion shield and method
US7776178B2 (en) * 2006-10-25 2010-08-17 Applied Materials, Inc. Suspension for showerhead in process chamber
US8034409B2 (en) * 2006-12-20 2011-10-11 Lam Research Corporation Methods, apparatuses, and systems for fabricating three dimensional integrated circuits
ES2331489T3 (es) * 2007-03-05 2010-01-05 Applied Materials, Inc. Instalacion de revestimiento y sistema de conduccion de gas.
JP5643528B2 (ja) * 2009-03-30 2014-12-17 東京エレクトロン株式会社 基板処理装置
US9758869B2 (en) * 2009-05-13 2017-09-12 Applied Materials, Inc. Anodized showerhead
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US9666414B2 (en) * 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
US10808317B2 (en) 2013-07-03 2020-10-20 Lam Research Corporation Deposition apparatus including an isothermal processing zone
CN104810233B (zh) * 2014-01-23 2017-02-08 北京北方微电子基地设备工艺研究中心有限责任公司 立体等离子源系统
KR102263827B1 (ko) 2014-03-21 2021-06-14 삼성디스플레이 주식회사 산화물 반도체 증착장치 및 이를 이용한 산화물 반도체의 제조 방법
US9431221B2 (en) * 2014-07-08 2016-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma-processing apparatus with upper electrode plate and method for performing plasma treatment process
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
CN110484895B (zh) * 2018-05-14 2021-01-08 北京北方华创微电子装备有限公司 腔室组件及反应腔室
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
KR20210107716A (ko) 2019-01-22 2021-09-01 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11398369B2 (en) 2019-06-25 2022-07-26 Applied Materials, Inc. Method and apparatus for actively tuning a plasma power source
US11462388B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
US11670493B2 (en) * 2020-11-13 2023-06-06 Applied Materials, Inc. Isolator ring clamp and physical vapor deposition chamber incorporating same
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11984306B2 (en) 2021-06-09 2024-05-14 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2618445B2 (ja) * 1987-06-26 1997-06-11 アプライド マテリアルズ インコーポレーテッド 反応器チャンバー自己清掃方法
DD274830A1 (de) * 1988-08-12 1990-01-03 Elektromat Veb Vorrichtung zur gasphasenbearbeitung von scheibenfoermigen werkstuecken
JP2960466B2 (ja) * 1990-03-19 1999-10-06 株式会社日立製作所 半導体デバイスの配線絶縁膜の形成方法及びその装置
JP2939355B2 (ja) * 1991-04-22 1999-08-25 東京エレクトロン株式会社 プラズマ処理装置
US5342472A (en) * 1991-08-12 1994-08-30 Tokyo Electron Limited Plasma processing apparatus
US5275683A (en) * 1991-10-24 1994-01-04 Tokyo Electron Limited Mount for supporting substrates and plasma processing apparatus using the same
KR0164618B1 (ko) * 1992-02-13 1999-02-01 이노우에 쥰이치 플라즈마 처리방법

Also Published As

Publication number Publication date
KR100198862B1 (ko) 1999-06-15
DE69401549T2 (de) 1997-05-22
KR950005122A (ko) 1995-02-18
EP0637055A1 (de) 1995-02-01
US5449410A (en) 1995-09-12
EP0637055B1 (de) 1997-01-22
JPH07166362A (ja) 1995-06-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee