DE69318480D1 - Plasmabearbeitungsgerät - Google Patents

Plasmabearbeitungsgerät

Info

Publication number
DE69318480D1
DE69318480D1 DE69318480T DE69318480T DE69318480D1 DE 69318480 D1 DE69318480 D1 DE 69318480D1 DE 69318480 T DE69318480 T DE 69318480T DE 69318480 T DE69318480 T DE 69318480T DE 69318480 D1 DE69318480 D1 DE 69318480D1
Authority
DE
Germany
Prior art keywords
processing device
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69318480T
Other languages
English (en)
Other versions
DE69318480T2 (de
Inventor
Hiroshi Nishimura
Toshiro Ono
Seitaro Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4187369A external-priority patent/JP2814416B2/ja
Priority claimed from JP5085183A external-priority patent/JP2779997B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE69318480D1 publication Critical patent/DE69318480D1/de
Application granted granted Critical
Publication of DE69318480T2 publication Critical patent/DE69318480T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE69318480T 1992-06-23 1993-06-22 Plasmabearbeitungsgerät Expired - Lifetime DE69318480T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4187369A JP2814416B2 (ja) 1992-06-23 1992-06-23 プラズマ処理装置
JP5085183A JP2779997B2 (ja) 1993-03-22 1993-03-22 プラズマ処理装置

Publications (2)

Publication Number Publication Date
DE69318480D1 true DE69318480D1 (de) 1998-06-18
DE69318480T2 DE69318480T2 (de) 1998-09-17

Family

ID=26426206

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69318480T Expired - Lifetime DE69318480T2 (de) 1992-06-23 1993-06-22 Plasmabearbeitungsgerät

Country Status (3)

Country Link
US (1) US5389154A (de)
EP (1) EP0578047B1 (de)
DE (1) DE69318480T2 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4132558C1 (de) * 1991-09-30 1992-12-03 Secon Halbleiterproduktionsgeraete Ges.M.B.H., Wien, At
US5487875A (en) * 1991-11-05 1996-01-30 Canon Kabushiki Kaisha Microwave introducing device provided with an endless circular waveguide and plasma treating apparatus provided with said device
JPH08102279A (ja) * 1994-09-30 1996-04-16 Hitachi Ltd マイクロ波プラズマ生成装置
TW285746B (de) * 1994-10-26 1996-09-11 Matsushita Electric Ind Co Ltd
US5793013A (en) * 1995-06-07 1998-08-11 Physical Sciences, Inc. Microwave-driven plasma spraying apparatus and method for spraying
TW283250B (en) * 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
US6132550A (en) * 1995-08-11 2000-10-17 Sumitomo Electric Industries, Ltd. Apparatuses for desposition or etching
DE19532435C2 (de) * 1995-09-02 2001-07-19 Ver Foerderung Inst Kunststoff Vorrichtung und Verfahren zum Erzeugen eines Plasmas
US6161498A (en) * 1995-09-14 2000-12-19 Tokyo Electron Limited Plasma processing device and a method of plasma process
WO1997020620A1 (en) * 1995-12-07 1997-06-12 The Regents Of The University Of California Improvements in method and apparatus for isotope enhancement in a plasma apparatus
US5824607A (en) * 1997-02-06 1998-10-20 Applied Materials, Inc. Plasma confinement for an inductively coupled plasma reactor
US6286451B1 (en) * 1997-05-29 2001-09-11 Applied Materials, Inc. Dome: shape and temperature controlled surfaces
JPH10335314A (ja) * 1997-06-05 1998-12-18 Mitsubishi Electric Corp プラズマ処理装置及び基板処理方法
US6080270A (en) * 1997-07-14 2000-06-27 Lam Research Corporation Compact microwave downstream plasma system
US6294466B1 (en) 1998-05-01 2001-09-25 Applied Materials, Inc. HDP-CVD apparatus and process for depositing titanium films for semiconductor devices
DE10138693A1 (de) * 2001-08-07 2003-07-10 Schott Glas Vorrichtung zum Beschichten von Gegenständen
JP4173679B2 (ja) * 2002-04-09 2008-10-29 エム・イー・エス・アフティ株式会社 Ｅｃｒプラズマ源およびｅｃｒプラズマ装置
US20060137613A1 (en) * 2004-01-27 2006-06-29 Shigeru Kasai Plasma generating apparatus, plasma generating method and remote plasma processing apparatus
US20050000446A1 (en) * 2003-07-04 2005-01-06 Yukihiko Nakata Plasma processing apparatus and plasma processing method
US6965287B2 (en) * 2004-03-31 2005-11-15 Tokyo Electron Limited Low reflection microwave window
US7806077B2 (en) * 2004-07-30 2010-10-05 Amarante Technologies, Inc. Plasma nozzle array for providing uniform scalable microwave plasma generation
WO2008013112A1 (fr) * 2006-07-28 2008-01-31 Tokyo Electron Limited Source de plasma à micro-ondes et appareil de traitement plasma
US20100074808A1 (en) * 2008-09-23 2010-03-25 Sang Hun Lee Plasma generating system
KR101796656B1 (ko) * 2010-04-30 2017-11-13 어플라이드 머티어리얼스, 인코포레이티드 수직 인라인 화학기상증착 시스템
US20130130513A1 (en) * 2010-07-21 2013-05-23 Tokyo Electron Limited Interlayer insulating layer forming method and semiconductor device
TW201234452A (en) * 2010-11-17 2012-08-16 Tokyo Electron Ltd Apparatus for plasma treatment and method for plasma treatment
JP5563522B2 (ja) * 2011-05-23 2014-07-30 東京エレクトロン株式会社 プラズマ処理装置
RU2539872C1 (ru) * 2013-07-05 2015-01-27 Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) Устройство свч плазменной обработки
JP6178140B2 (ja) * 2013-07-10 2017-08-09 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及びマイクロ波供給方法
DE102013215252A1 (de) * 2013-08-02 2015-02-05 Eeplasma Gmbh Vorrichtung und Verfahren zur Behandlung von Prozessgasen in einem Plasma angeregt durch elektromagnetische Wellen hoher Frequenz
DE102013110883B3 (de) * 2013-10-01 2015-01-15 TRUMPF Hüttinger GmbH + Co. KG Vorrichtung und Verfahren zur Überwachung einer Entladung in einem Plasmaprozess
EP2905801B1 (de) 2014-02-07 2019-05-22 TRUMPF Huettinger Sp. Z o. o. Verfahren zur Überwachung der Entladung in einem Plasmaprozess und Überwachungsvorrichtung zur Überwachung der Entladung in einem Plasma
US10340124B2 (en) 2015-10-29 2019-07-02 Applied Materials, Inc. Generalized cylindrical cavity system for microwave rotation and impedance shifting by irises in a power-supplying waveguide
JP6471211B2 (ja) 2017-06-02 2019-02-13 株式会社エスイー 水素化マグネシウム等の製造方法、水素化マグネシウムを用いた発電方法及び水素化マグネシウム等の製造装置
CN109681399A (zh) * 2018-12-12 2019-04-26 上海航天控制技术研究所 一种小直径高效微波ecr中和器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933990B2 (ja) * 1977-12-28 1984-08-20 富士通株式会社 発光ダイオ−ドの製造方法
JPS6243335A (ja) * 1985-08-21 1987-02-25 Arita Seisakusho:Kk 自動車のドアが開く事を表示する装置
JPS6398330A (ja) * 1986-10-16 1988-04-28 工業技術院長 アマノリ類糸状体培養基
US5146138A (en) * 1988-04-05 1992-09-08 Mitsubishi Denki Kabushiki Kaisha Plasma processor
US5125358A (en) * 1988-07-26 1992-06-30 Matsushita Electric Industrial Co., Ltd. Microwave plasma film deposition system
JPH02141494A (ja) * 1988-07-30 1990-05-30 Kobe Steel Ltd ダイヤモンド気相合成装置
US4943345A (en) * 1989-03-23 1990-07-24 Board Of Trustees Operating Michigan State University Plasma reactor apparatus and method for treating a substrate
JPH03193880A (ja) * 1989-08-03 1991-08-23 Mikakutou Seimitsu Kogaku Kenkyusho:Kk 高圧力下でのマイクロ波プラズマｃｖｄによる高速成膜方法及びその装置
JPH03122273A (ja) * 1989-10-06 1991-05-24 Hitachi Ltd マイクロ波を用いた成膜装置
US5234565A (en) * 1990-09-20 1993-08-10 Matsushita Electric Industrial Co., Ltd. Microwave plasma source

Also Published As

Publication number Publication date
EP0578047B1 (de) 1998-05-13
US5389154A (en) 1995-02-14
EP0578047A1 (de) 1994-01-12
DE69318480T2 (de) 1998-09-17

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Legal Events

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