DE69506323D1 - Mikrowellenplasma-Bearbeitungssystem - Google Patents

Mikrowellenplasma-Bearbeitungssystem

Info

Publication number
DE69506323D1
DE69506323D1 DE69506323T DE69506323T DE69506323D1 DE 69506323 D1 DE69506323 D1 DE 69506323D1 DE 69506323 T DE69506323 T DE 69506323T DE 69506323 T DE69506323 T DE 69506323T DE 69506323 D1 DE69506323 D1 DE 69506323D1
Authority
DE
Germany
Prior art keywords
processing system
plasma processing
microwave plasma
microwave
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69506323T
Other languages
English (en)
Other versions
DE69506323T2 (de
Inventor
Katsuo Katayama
Kyoichi Komachi
Hiroshi Mabuchi
Takeshi Akimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Publication of DE69506323D1 publication Critical patent/DE69506323D1/de
Application granted granted Critical
Publication of DE69506323T2 publication Critical patent/DE69506323T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32504—Means for preventing sputtering of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
DE69506323T 1994-06-14 1995-06-13 Mikrowellenplasma-Bearbeitungssystem Expired - Fee Related DE69506323T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13203494A JP3171222B2 (ja) 1994-06-14 1994-06-14 マイクロ波プラズマ処理装置

Publications (2)

Publication Number Publication Date
DE69506323D1 true DE69506323D1 (de) 1999-01-14
DE69506323T2 DE69506323T2 (de) 1999-08-26

Family

ID=15071957

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69506323T Expired - Fee Related DE69506323T2 (de) 1994-06-14 1995-06-13 Mikrowellenplasma-Bearbeitungssystem

Country Status (5)

Country Link
US (1) US5529632A (de)
EP (1) EP0688037B1 (de)
JP (1) JP3171222B2 (de)
KR (1) KR0153841B1 (de)
DE (1) DE69506323T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3257328B2 (ja) 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JP2701775B2 (ja) * 1995-03-17 1998-01-21 日本電気株式会社 プラズマ処理装置
JP3164200B2 (ja) * 1995-06-15 2001-05-08 住友金属工業株式会社 マイクロ波プラズマ処理装置
JP3164195B2 (ja) * 1995-06-15 2001-05-08 住友金属工業株式会社 マイクロ波プラズマ処理装置
EP0831680A4 (de) * 1996-03-28 2000-02-02 Sumitomo Metal Ind Vorrichtung und verfahren zur plasmabehandlung
US6092486A (en) * 1996-05-27 2000-07-25 Sumimoto Metal Indsutries, Ltd. Plasma processing apparatus and plasma processing method
JP3050124B2 (ja) * 1996-05-27 2000-06-12 住友金属工業株式会社 プラズマ処理装置
US5707452A (en) * 1996-07-08 1998-01-13 Applied Microwave Plasma Concepts, Inc. Coaxial microwave applicator for an electron cyclotron resonance plasma source
JP2921499B2 (ja) * 1996-07-30 1999-07-19 日本電気株式会社 プラズマ処理装置
US5814154A (en) * 1997-01-23 1998-09-29 Gasonics International Short-coupled-path extender for plasma source
US6432203B1 (en) * 1997-03-17 2002-08-13 Applied Komatsu Technology, Inc. Heated and cooled vacuum chamber shield
JP4217299B2 (ja) * 1998-03-06 2009-01-28 東京エレクトロン株式会社 処理装置
WO2000019501A1 (fr) * 1998-09-30 2000-04-06 Tokyo Electron Limited Procede et appareil de traitement au plasma
JP2000348897A (ja) * 1999-05-31 2000-12-15 Sumitomo Metal Ind Ltd プラズマ処理装置
US20040224504A1 (en) * 2000-06-23 2004-11-11 Gadgil Prasad N. Apparatus and method for plasma enhanced monolayer processing
KR100434487B1 (ko) * 2001-01-17 2004-06-05 삼성전자주식회사 샤워 헤드 및 이를 포함하는 박막 형성 장비
JP2002280196A (ja) * 2001-03-15 2002-09-27 Micro Denshi Kk マイクロ波を利用したプラズマ発生装置
KR100455430B1 (ko) * 2002-03-29 2004-11-06 주식회사 엘지이아이 열교환기 표면처리장비의 냉각장치 및 그 제조방법
KR100481874B1 (ko) * 2003-02-05 2005-04-11 삼성전자주식회사 집적회로 제조에 사용되는 확산로 및 확산로의 냉각방법
JP3962722B2 (ja) * 2003-12-24 2007-08-22 三菱重工業株式会社 プラズマ処理装置
CN1983518B (zh) * 2004-06-21 2011-06-08 东京毅力科创株式会社 等离子体处理装置和方法
JP2010016225A (ja) * 2008-07-04 2010-01-21 Tokyo Electron Ltd 温度調節機構および温度調節機構を用いた半導体製造装置
SG11201606004PA (en) * 2014-02-14 2016-08-30 Applied Materials Inc Upper dome with injection assembly
US20220406643A1 (en) * 2021-06-18 2022-12-22 Applied Materials, Inc. Semitransparent substrate support for microwave degas chamber

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723228A (en) * 1980-07-16 1982-02-06 Mitsubishi Electric Corp Dry etching device
US5364519A (en) * 1984-11-30 1994-11-15 Fujitsu Limited Microwave plasma processing process and apparatus
EP0379828B1 (de) * 1989-01-25 1995-09-27 International Business Machines Corporation Radiofrequenzinduktion/Mehrpolplasma-Bearbeitungsvorrichtung
JP2993675B2 (ja) * 1989-02-08 1999-12-20 株式会社日立製作所 プラズマ処理方法及びその装置
JP2602336B2 (ja) * 1989-11-29 1997-04-23 株式会社日立製作所 プラズマ処理装置
US5173641A (en) * 1990-09-14 1992-12-22 Tokyo Electron Limited Plasma generating apparatus
JP3020621B2 (ja) 1991-02-08 2000-03-15 株式会社日立製作所 プラズマエッチング方法
JPH05144773A (ja) 1991-11-19 1993-06-11 Sumitomo Metal Ind Ltd プラズマエツチング装置
JP2570090B2 (ja) * 1992-10-08 1997-01-08 日本電気株式会社 ドライエッチング装置
JP3042208B2 (ja) 1992-09-22 2000-05-15 住友金属工業株式会社 マイクロ波プラズマ処理装置
JP3227522B2 (ja) * 1992-10-20 2001-11-12 株式会社日立製作所 マイクロ波プラズマ処理方法及び装置

Also Published As

Publication number Publication date
EP0688037A1 (de) 1995-12-20
EP0688037B1 (de) 1998-12-02
KR960002628A (ko) 1996-01-26
DE69506323T2 (de) 1999-08-26
JP3171222B2 (ja) 2001-05-28
JPH07335567A (ja) 1995-12-22
KR0153841B1 (ko) 1998-12-01
US5529632A (en) 1996-06-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SUMITOMO METAL INDUSTRIES, LTD., OSAKA, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee