JPS5723228A - Dry etching device - Google Patents

Dry etching device

Info

Publication number
JPS5723228A
JPS5723228A JP9789080A JP9789080A JPS5723228A JP S5723228 A JPS5723228 A JP S5723228A JP 9789080 A JP9789080 A JP 9789080A JP 9789080 A JP9789080 A JP 9789080A JP S5723228 A JPS5723228 A JP S5723228A
Authority
JP
Japan
Prior art keywords
etching
tank
dry etching
members
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9789080A
Other languages
Japanese (ja)
Inventor
Isao Shibayama
Koichi Nagasawa
Kazuo Mizuguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9789080A priority Critical patent/JPS5723228A/en
Publication of JPS5723228A publication Critical patent/JPS5723228A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To perform dry etching keeping constantly the inside of a dry etching tank cleanly by method wherein impurity absorbing members are provided detachable freely on the inside walls of the etching tank. CONSTITUTION:The members 8 to absorb impurities generated by etching are provided detachable freely on the side walls of the etching tank 4, and traditional reactive etching is performed. The member 8 is consisted of glass wool, Al or stainless steel being formed unevenness on the surface thereof. By this constitution, cleanness of the inside of tank can be kept constantly by exchanging the members 8 properly, and the semiconductor device having favorable characteristic can be obtained.
JP9789080A 1980-07-16 1980-07-16 Dry etching device Pending JPS5723228A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9789080A JPS5723228A (en) 1980-07-16 1980-07-16 Dry etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9789080A JPS5723228A (en) 1980-07-16 1980-07-16 Dry etching device

Publications (1)

Publication Number Publication Date
JPS5723228A true JPS5723228A (en) 1982-02-06

Family

ID=14204341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9789080A Pending JPS5723228A (en) 1980-07-16 1980-07-16 Dry etching device

Country Status (1)

Country Link
JP (1) JPS5723228A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4693777A (en) * 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
FR2702327A1 (en) * 1993-03-02 1994-09-09 Commissariat Energie Atomique Device for recovering a material, especially a metal, from a source of plasma formed from this material and metal recovery methods
EP0688037A1 (en) * 1994-06-14 1995-12-20 Sumitomo Metal Industries, Ltd. Microwave plasma processing system
US6815365B2 (en) 1995-03-16 2004-11-09 Hitachi, Ltd. Plasma etching apparatus and plasma etching method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4693777A (en) * 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
FR2702327A1 (en) * 1993-03-02 1994-09-09 Commissariat Energie Atomique Device for recovering a material, especially a metal, from a source of plasma formed from this material and metal recovery methods
EP0688037A1 (en) * 1994-06-14 1995-12-20 Sumitomo Metal Industries, Ltd. Microwave plasma processing system
US5529632A (en) * 1994-06-14 1996-06-25 Sumitomo Metal Industries, Ltd. Microwave plasma processing system
US6815365B2 (en) 1995-03-16 2004-11-09 Hitachi, Ltd. Plasma etching apparatus and plasma etching method
US7208422B2 (en) 1995-03-16 2007-04-24 Hitachi, Ltd. Plasma processing method
US7565879B2 (en) 1995-03-16 2009-07-28 Hitachi, Ltd Plasma processing apparatus

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