JPS5443469A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5443469A
JPS5443469A JP10884377A JP10884377A JPS5443469A JP S5443469 A JPS5443469 A JP S5443469A JP 10884377 A JP10884377 A JP 10884377A JP 10884377 A JP10884377 A JP 10884377A JP S5443469 A JPS5443469 A JP S5443469A
Authority
JP
Japan
Prior art keywords
inorganic ion
methanol
corrosion
semiconductor device
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10884377A
Other languages
Japanese (ja)
Inventor
Kunihiro Tsubosaki
Kunihiko Nishi
Akira Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10884377A priority Critical patent/JPS5443469A/en
Publication of JPS5443469A publication Critical patent/JPS5443469A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE: To prevent the corrosion of the element wiring and electrode by removing completely the contamination due to the oil or the inorganic ion before sealing, and also to avoid the lowering of the characteristics caused by the inorganic ion.
CONSTITUTION: The semiconductor device assembled on the lead frame is cleansed in the Freon vapor bath to remove chiefly the floating matters in the air or the oil strains caused by the worker's hand. Then the inorganic ion contamination is removed through the spray washing with pure water. Immediately the device is soacked into methanol, and then methanol is removed by the Freon vapor. Then the device is sealed with the resin. Thus, the corrosion of the electrode and the wiring can be avoided with no deterioration of the characteristics.
COPYRIGHT: (C)1979,JPO&Japio
JP10884377A 1977-09-12 1977-09-12 Manufacture of semiconductor device Pending JPS5443469A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10884377A JPS5443469A (en) 1977-09-12 1977-09-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10884377A JPS5443469A (en) 1977-09-12 1977-09-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5443469A true JPS5443469A (en) 1979-04-06

Family

ID=14494975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10884377A Pending JPS5443469A (en) 1977-09-12 1977-09-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5443469A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5726103A (en) * 1980-07-23 1982-02-12 Seiko Epson Corp Magnetic powder with lubricating layer
JPS5856340A (en) * 1981-09-30 1983-04-04 Toshiba Corp Purification of semiconductor wafer
JPS58113301A (en) * 1981-12-28 1983-07-06 Shinku Yakin Kk Slow oxidizing device for ultrafine metallic particles
JPH05160097A (en) * 1991-12-06 1993-06-25 Mitsubishi Electric Corp Cleaning method of substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5726103A (en) * 1980-07-23 1982-02-12 Seiko Epson Corp Magnetic powder with lubricating layer
JPS5856340A (en) * 1981-09-30 1983-04-04 Toshiba Corp Purification of semiconductor wafer
JPS58113301A (en) * 1981-12-28 1983-07-06 Shinku Yakin Kk Slow oxidizing device for ultrafine metallic particles
JPH05160097A (en) * 1991-12-06 1993-06-25 Mitsubishi Electric Corp Cleaning method of substrate

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