DE69500565D1 - Plasmabearbeitungsvorrichtung - Google Patents

Plasmabearbeitungsvorrichtung

Info

Publication number
DE69500565D1
DE69500565D1 DE1995600565 DE69500565A DE69500565D1 DE 69500565 D1 DE69500565 D1 DE 69500565D1 DE 1995600565 DE1995600565 DE 1995600565 DE 69500565 A DE69500565 A DE 69500565A DE 69500565 D1 DE69500565 D1 DE 69500565D1
Authority
DE
Germany
Prior art keywords
processing apparatus
plasma processing
plasma
apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1995600565
Other languages
English (en)
Other versions
DE69500565T2 (de
Inventor
Itsuko Sakai
Makoto Sekine
Keiji Horioka
Yukimasa Yoshida
Koichiro Inazawa
Masahiro Ogasawara
Yoshio Ishikawa
Kazuo Eguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Toshiba Corp
Tokyo Electron Ltd
Tokyo Electron Yamanashi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2932594 priority Critical
Priority to JP07034110A priority patent/JP3124204B2/ja
Application filed by Toshiba Corp, Tokyo Electron Ltd, Tokyo Electron Yamanashi Ltd filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69500565D1 publication Critical patent/DE69500565D1/de
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means
DE1995600565 1994-02-28 1995-02-28 Plasmabearbeitungsvorrichtung Expired - Lifetime DE69500565D1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2932594 1994-02-28
JP07034110A JP3124204B2 (ja) 1994-02-28 1995-02-22 プラズマ処理装置

Publications (1)

Publication Number Publication Date
DE69500565D1 true DE69500565D1 (de) 1997-09-25

Family

ID=26367512

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1995600565 Expired - Lifetime DE69500565D1 (de) 1994-02-28 1995-02-28 Plasmabearbeitungsvorrichtung
DE1995600565 Expired - Lifetime DE69500565T2 (de) 1994-02-28 1995-02-28 Plasmabearbeitungsvorrichtung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE1995600565 Expired - Lifetime DE69500565T2 (de) 1994-02-28 1995-02-28 Plasmabearbeitungsvorrichtung

Country Status (6)

Country Link
US (1) US5717294A (de)
EP (1) EP0669637B1 (de)
JP (1) JP3124204B2 (de)
KR (1) KR0159197B1 (de)
DE (2) DE69500565D1 (de)
TW (1) TW347553B (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG50732A1 (en) 1995-05-19 1998-07-20 Hitachi Ltd Method and apparatus for plasma processing apparatus
TW335517B (en) 1996-03-01 1998-07-01 Hitachi Ltd Apparatus and method for processing plasma
US6902683B1 (en) 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
US6014943A (en) * 1996-09-12 2000-01-18 Tokyo Electron Limited Plasma process device
US6113731A (en) * 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field
JP3582287B2 (ja) 1997-03-26 2004-10-27 株式会社日立製作所 エッチング装置
SE511139C2 (sv) * 1997-11-20 1999-08-09 Hana Barankova Plasmabearbetningsapparat med vridbara magneter
JP3252780B2 (ja) * 1998-01-16 2002-02-04 日本電気株式会社 シリコン層のエッチング方法
DE19827461A1 (de) * 1998-06-19 1999-12-23 Leybold Systems Gmbh Vorrichtung zum Beschichten von Substraten in einer Vakuumkammer
JP4066214B2 (ja) * 1998-07-24 2008-03-26 財団法人国際科学振興財団 プラズマプロセス装置
JP3298528B2 (ja) * 1998-12-10 2002-07-02 日本電気株式会社 回路設計方法および装置、情報記憶媒体、集積回路装置
US6237527B1 (en) 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
JP3892996B2 (ja) * 1999-09-02 2007-03-14 信越化学工業株式会社 マグネトロンプラズマ処理装置
US20070048882A1 (en) * 2000-03-17 2007-03-01 Applied Materials, Inc. Method to reduce plasma-induced charging damage
US8048806B2 (en) * 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US7067034B2 (en) 2000-03-27 2006-06-27 Lam Research Corporation Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma
US20030010454A1 (en) * 2000-03-27 2003-01-16 Bailey Andrew D. Method and apparatus for varying a magnetic field to control a volume of a plasma
US6514378B1 (en) * 2000-03-31 2003-02-04 Lam Research Corporation Method for improving uniformity and reducing etch rate variation of etching polysilicon
JP2001338912A (ja) * 2000-05-29 2001-12-07 Tokyo Electron Ltd プラズマ処理装置および処理方法
AU8020001A (en) 2000-09-01 2002-03-22 Shinetsu Chemical Co Magnetic field generator for magnetron plasma, and plasma etching apparatus and method comprising the magnetic field generator
KR100403616B1 (ko) * 2001-01-03 2003-10-30 삼성전자주식회사 플라즈마 장치에 의한 플라즈마 처리 공정의 시뮬레이션방법
US7374636B2 (en) * 2001-07-06 2008-05-20 Applied Materials, Inc. Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
JP4009087B2 (ja) * 2001-07-06 2007-11-14 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 半導体製造装置における磁気発生装置、半導体製造装置および磁場強度制御方法
JP4657521B2 (ja) * 2001-08-28 2011-03-23 東京エレクトロン株式会社 プラズマ処理装置
JP2003309107A (ja) * 2002-04-12 2003-10-31 Tokyo Electron Ltd 積層膜のエッチング方法
TWI283899B (en) * 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US8617351B2 (en) * 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US20040028837A1 (en) * 2002-06-28 2004-02-12 Tokyo Electron Limited Method and apparatus for plasma processing
AU2003257652A1 (en) * 2002-08-21 2004-03-11 Shin-Etsu Chemical Co., Ltd. Magnetron plasma-use magnetic field generation device
US7458335B1 (en) 2002-10-10 2008-12-02 Applied Materials, Inc. Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils
US7422654B2 (en) * 2003-02-14 2008-09-09 Applied Materials, Inc. Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
WO2005028697A1 (en) * 2003-09-12 2005-03-31 Applied Process Technologies, Inc. Magnetic mirror plasma source and method using same
US7178126B2 (en) * 2004-01-21 2007-02-13 Oki Electric Industry Co., Ltd. Method of protecting a semiconductor integrated circuit from plasma damage
US7084573B2 (en) * 2004-03-05 2006-08-01 Tokyo Electron Limited Magnetically enhanced capacitive plasma source for ionized physical vapor deposition
US9218944B2 (en) * 2006-10-30 2015-12-22 Applied Materials, Inc. Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors
US8002946B2 (en) * 2006-10-30 2011-08-23 Applied Materials, Inc. Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
US7967930B2 (en) * 2006-10-30 2011-06-28 Applied Materials, Inc. Plasma reactor for processing a workpiece and having a tunable cathode
US8017029B2 (en) * 2006-10-30 2011-09-13 Applied Materials, Inc. Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside
US8012366B2 (en) * 2006-10-30 2011-09-06 Applied Materials, Inc. Process for etching a transparent workpiece including backside endpoint detection steps
US20080099450A1 (en) * 2006-10-30 2008-05-01 Applied Materials, Inc. Mask etch plasma reactor with backside optical sensors and multiple frequency control of etch distribution
US7976671B2 (en) 2006-10-30 2011-07-12 Applied Materials, Inc. Mask etch plasma reactor with variable process gas distribution
WO2008072997A1 (en) 2006-12-15 2008-06-19 'nauchnoe I Tekhnologicheskoe Oborudovanie' Limited Device for the plasma etching of semiconductor plates and/or for forming dielectric films thereon
US8773020B2 (en) * 2010-10-22 2014-07-08 Applied Materials, Inc. Apparatus for forming a magnetic field and methods of use thereof
US9269546B2 (en) 2010-10-22 2016-02-23 Applied Materials, Inc. Plasma reactor with electron beam plasma source having a uniform magnetic field
JP6136613B2 (ja) 2012-09-21 2017-05-31 東京エレクトロン株式会社 プラズマ処理方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD204109A1 (de) * 1981-08-07 1983-11-16 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zum reaktiven ionenaetzen und zur plasmaoxydation
US4740268A (en) * 1987-05-04 1988-04-26 Motorola Inc. Magnetically enhanced plasma system
DK0585229T3 (da) * 1991-05-21 1995-12-27 Materials Research Corp Blødætsningsmodul til clusterværktøj og tilhørende ECR-plasmagenerator
KR100297358B1 (ko) * 1991-07-23 2001-11-30 히가시 데쓰로 플라즈마에칭장치
US5444207A (en) * 1992-03-26 1995-08-22 Kabushiki Kaisha Toshiba Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field
JP3311064B2 (ja) * 1992-03-26 2002-08-05 株式会社東芝 プラズマ生成装置、表面処理装置および表面処理方法
EP0574100B1 (de) * 1992-04-16 1999-05-12 Mitsubishi Jukogyo Kabushiki Kaisha Verfahren und Vorrichtung zur Plasma-unterstützten chemischen Dampfphasen-Abscheidung
JP3238200B2 (ja) * 1992-07-17 2001-12-10 株式会社東芝 基体処理装置及び半導体素子製造方法

Also Published As

Publication number Publication date
KR950025904A (ko) 1995-09-18
JPH07288195A (ja) 1995-10-31
EP0669637B1 (de) 1997-08-20
US5717294A (en) 1998-02-10
DE69500565T2 (de) 1998-03-12
EP0669637A1 (de) 1995-08-30
TW347553B (en) 1998-12-11
KR0159197B1 (ko) 1999-02-01
JP3124204B2 (ja) 2001-01-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TOKYO ELECTRON LTD., TOKIO/TOKYO, JP KABUSHIKI KAI

8339 Ceased/non-payment of the annual fee
8370 Indication of lapse of patent is to be deleted