KR102390961B1 - 반도체 장치의 제작 방법 - Google Patents

반도체 장치의 제작 방법 Download PDF

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KR102390961B1
KR102390961B1 KR1020217042310A KR20217042310A KR102390961B1 KR 102390961 B1 KR102390961 B1 KR 102390961B1 KR 1020217042310 A KR1020217042310 A KR 1020217042310A KR 20217042310 A KR20217042310 A KR 20217042310A KR 102390961 B1 KR102390961 B1 KR 102390961B1
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film
oxide semiconductor
oxygen
transistor
semiconductor film
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KR20210158885A (ko
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순페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • H01L21/383—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a gaseous phase
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L27/1225—
    • H01L29/263—
    • H01L29/4908—
    • H01L29/66742—
    • H01L29/66969—
    • H01L29/78603—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Dram (AREA)
  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020217042310A 2010-04-23 2011-04-07 반도체 장치의 제작 방법 Active KR102390961B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227013484A KR102434906B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010100197 2010-04-23
JPJP-P-2010-100197 2010-04-23
KR1020217028710A KR102344452B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
PCT/JP2011/059224 WO2011132590A1 (en) 2010-04-23 2011-04-07 Method for manufacturing semiconductor device

Related Parent Applications (1)

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KR1020217028710A Division KR102344452B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법

Related Child Applications (1)

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KR1020227013484A Division KR102434906B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법

Publications (2)

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KR20210158885A KR20210158885A (ko) 2021-12-31
KR102390961B1 true KR102390961B1 (ko) 2022-04-27

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KR1020217042310A Active KR102390961B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020147027300A Expired - Fee Related KR101540039B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020147014308A Active KR101860467B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020217028710A Active KR102344452B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020227013484A Active KR102434906B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020187013517A Ceased KR20180054919A (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020127030006A Active KR101800844B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020207029236A Ceased KR20200121376A (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020157018511A Ceased KR20150088324A (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020197008574A Expired - Fee Related KR102167416B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020137014586A Active KR101437081B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법

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KR1020147027300A Expired - Fee Related KR101540039B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020147014308A Active KR101860467B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020217028710A Active KR102344452B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020227013484A Active KR102434906B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020187013517A Ceased KR20180054919A (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020127030006A Active KR101800844B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020207029236A Ceased KR20200121376A (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020157018511A Ceased KR20150088324A (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020197008574A Expired - Fee Related KR102167416B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법
KR1020137014586A Active KR101437081B1 (ko) 2010-04-23 2011-04-07 반도체 장치의 제작 방법

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US (3) US8461007B2 (enExample)
JP (11) JP5879044B2 (enExample)
KR (11) KR102390961B1 (enExample)
CN (5) CN102870219B (enExample)
TW (4) TWI576924B (enExample)
WO (1) WO2011132590A1 (enExample)

Families Citing this family (75)

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CN102859704B (zh) 2010-04-23 2016-08-03 株式会社半导体能源研究所 半导体装置的制造方法
CN104465408B (zh) 2010-04-23 2017-09-15 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
WO2011132591A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20130055607A (ko) 2010-04-23 2013-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR102390961B1 (ko) 2010-04-23 2022-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
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KR20130077839A (ko) 2010-05-21 2013-07-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
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KR101872927B1 (ko) 2010-05-21 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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TWI624878B (zh) 2011-03-11 2018-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
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JP5912394B2 (ja) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
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JP6059501B2 (ja) 2012-10-17 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP6021586B2 (ja) 2012-10-17 2016-11-09 株式会社半導体エネルギー研究所 半導体装置
JP2014082388A (ja) 2012-10-17 2014-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
JP6204145B2 (ja) 2012-10-23 2017-09-27 株式会社半導体エネルギー研究所 半導体装置
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US9577446B2 (en) * 2012-12-13 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Power storage system and power storage device storing data for the identifying power storage device
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