CN110112102B - 一种阵列基板及其制备方法 - Google Patents
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Abstract
本申请提供一种阵列基板及其制备方法,通过将形成有缓冲层的阵列基板置于反应室内并通入氧气,使阵列基板在氧气气氛下加热至预设温度,并对氧气加入高频振荡电源,进行退火制程;使氧气转化为等离子体状态,产生的氧离子和/或氧自由基用于修补缓冲层表面的氧缺陷;在缓冲层上制备半导体氧化物层,采用与缓冲层相同的方法对半导体氧化物层表面的氧缺陷进行修补,从而提高器件的稳定性。
Description
技术领域
本申请涉及显示器制造领域,尤其涉及一种阵列基板及其制备方法。
背景技术
近年来,氧化物半导体材料在大尺寸平板显示方面已得到广泛的应用,特别是铟镓锌氧化物(InGaZnO4,IGZO)因其制备工艺简单,低阈值电压、高迁移率及良好的大尺寸制备均匀性而广受人们的关注。在a-IGZO TFT结构中,相对于Bottom Gate TFT结构,TopGate TFT结构可以减少寄生电容的存在,具有良好的可扩展性,因此在大尺寸平板显示应用方面具有明显的优势。a-IGZO TFT结构的稳定性和可靠性是当前研究的热点,目前a-IGZO TFT制备过程中为提高器件的稳定性,需要进行多次高温退火处理,但会造成生产周期长,以及过高的退火温度会造成膜层的脱落、变形、损伤等不良。
因此,现有技术存在缺陷,急需改进。
发明内容
本申请提供一种阵列基板及其制备方法,能够缩短生产周期,避免退火高温造成膜层的脱落、变形、损伤等现象,提高了器件的稳定性和可靠性。
为解决上述问题,本申请提供的技术方案如下:
本申请提供一种阵列基板的制备方法,所述方法包括以下步骤:
步骤S10,一阵列基板上制备有缓冲层,将所述阵列基板置于反应室内并通入氧气,使所述阵列基板在氧气气氛下加热至预设温度,进行退火制程;
步骤S20,对所述氧气加入高频振荡电源,使所述氧气转化为等离子体状态,产生的氧离子和/或氧自由基用于修补所述缓冲层表面的氧缺陷;
步骤S30,在所述缓冲层上制备半导体氧化物层,将制备有所述半导体氧化物层的所述阵列基板置于所述氧气气氛下,并加热至所述预设温度,进行退火制程;
步骤S40,对所述氧气加入高频振荡电源,使所述氧气转化为等离子体状态,产生的所述氧离子和/或所述氧自由基用于修补所述半导体氧化物层表面的氧缺陷。
在本申请的制备方法中,所述预设温度在100℃~200℃之间。
在本申请的制备方法中,所述预设温度为150℃。
在本申请的制备方法中,在所述步骤S20以及所述步骤S40中,在所述氧气为等离子体状态下,进行退火处理0.5小时~1.5小时。
在本申请的制备方法中,所述退火处理的时间为1小时。
在本申请的制备方法中,所述缓冲层的材料包括氧化硅,所述缓冲层的厚度为2000埃~5500埃之间。
在本申请的制备方法中,所述半导体氧化物层为铟镓锌氧化物层,所述半导体氧化物层的厚度为300埃~1000埃。
本申请还提供一种采用上述制备方法制备的阵列基板,所述阵列基板在氧气气氛下进行退火制程,所述阵列基板包括:
衬底基板;
缓冲层,制备于所述衬底基板上;
半导体氧化物层,间隔的制备于所述缓冲层上;
其中,所述氧气产生的氧离子和/或氧自由基用于修补所述缓冲层以及所述半导体氧化物层表面的氧缺陷。
在本申请的阵列基板中,所述阵列基板还包括金属遮光层,所述金属遮光层间隔的制备于所述衬底基板上,并与所述半导体氧化物层以所述缓冲层隔开。
在本申请的阵列基板中,所述半导体氧化物层位于所述金属遮光层遮蔽的范围内,所述半导体氧化物层为铟镓锌氧化物层。
本申请的有益效果为:相较于现有的阵列基板,本申请提供的阵列基板以及制备方法,通过将阵列基板置于氧气的气氛下,并将退火温度控制在150℃左右,对氧气加入高频振荡电源,使氧气转化为等离子体状态,由氧气产生的氧离子和/或氧自由基用于修补阵列基板上膜层的氧缺陷,能够缩短生产周期,避免退火高温造成膜层的脱落、变形、损伤等现象,提高了器件的稳定性和可靠性。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的阵列基板的制备方法流程图;
图2A~2E为本申请实施例提供的阵列基板的制备方法示意图。
具体实施方式
以下各实施例的说明是参考附加的图示,用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本申请,而非用以限制本申请。在图中,结构相似的单元是用以相同标号表示。
本申请针对现有的阵列基板,由于需要进行多次高温退火处理,会造成生产周期长,以及高温会造成膜层的脱落、变形、损伤等不良的技术问题,本实施例能够解决该缺陷。
如图1所示,为本申请实施例提供的阵列基板的制备方法流程图。并结合图2A至图2E绘示了本申请实施例提供的阵列基板的制备方法示意图。所述方法包括以下步骤:
步骤S10,一阵列基板上制备有缓冲层,将所述阵列基板置于反应室内并通入氧气,使所述阵列基板在氧气气氛下加热至预设温度,进行退火制程;
如图2A所示,首先提供一衬底基板20。在本实施例中,所述衬底基板20包括但不限于玻璃基板、聚酰亚胺薄膜等。接着,采用PVD在所述衬底基板20上沉积一层金属遮光材料,所述金属遮光材料为钼金属(Mo),厚度为1000埃~1500埃,并依次利用黄光工艺和刻蚀工艺形成图案化的金属遮光层21。之后采用CVD制程在所述衬底基板20和所述金属遮光层21上沉积一层缓冲层22,所述缓冲层22的材料包括但不限于氧化硅,沉积的厚度为2000埃~5500埃。
随后,将形成有所述缓冲层22的所述阵列基板载入反应室内,其中所述反应室具有至少一个气体通入口,在本实施例中用于通入氧气,以使所述反应室内形成氧气气氛,并将所述阵列基板加热至预设温度,以进行退火制程。
步骤S20,对所述氧气加入高频振荡电源,使所述氧气转化为等离子体状态,产生的氧离子和/或氧自由基用于修补所述缓冲层表面的氧缺陷;
在所述退火制程中,对所述氧气加入高频振荡电源,使所述氧气转化为等离子体状态,所述高频振荡电源使所述氧气转化为活性很高的氧粒子,如氧离子、氧自由基等。产生的所述氧离子和/或所述氧自由基可以修补所述缓冲层22表面的氧缺陷,从而使所述缓冲层22与半导体氧化物层23(如图2B所示)的接触表面更加稳定良好。
在一种实施例中,退火制程的制程温度(预设温度)在100℃~200℃之间,但不以此为限;退火制程在常压下进行,但不以此为限;退火制程的制程时间在0.5小时~1.5小时之间,但不以此为限。
在本实施例中,退火制程的制程温度在150℃,退火制程的制程时间为1小时。
步骤S30,在所述缓冲层上制备半导体氧化物层,将制备有所述半导体氧化物层的所述阵列基板置于所述氧气气氛下,并加热至所述预设温度,进行退火制程;
如图2B所示,采用PVD制程在所述缓冲层22上沉积一层半导体氧化物材料,厚度为300埃~1000埃,并依次利用黄光工艺和刻蚀工艺制得图形化的半导体氧化物层23,所述半导体氧化物层23位于所述金属遮光层21遮蔽的范围内。
将形成有所述半导体氧化物层23的所述阵列基板载入所述反应室内,并通入氧气,准备进行退火制程。
步骤S40,对所述氧气加入高频振荡电源,使所述氧气转化为等离子体状态,产生的所述氧离子和/或所述氧自由基用于修补所述半导体氧化物层表面的氧缺陷。
在退火制程中,对所述阵列基板加热,并对所述氧气加入高频振荡电源,加热温度控制在所述预设温度范围内。使得所述氧气转化为等离子体状态,产生的所述氧离子和/或所述氧自由基可以修补所述半导体氧化物层23表面的氧缺陷,从而提高器件的稳定性。
在一种实施例中,所述半导体氧化物层23的退火制程的温度在100℃~200℃之间,但不以此为限;退火制程在常压下进行,但不以此为限;退火制程的制程时间在0.5小时~1.5小时之间,但不以此为限。
在本实施例中,退火制程的制程温度在150℃,退火制程的制程时间为1小时。
在本实施例中,所述半导体氧化物层23为铟镓锌氧化物层,但不以此为限。
如图2C所示,通过CVD制程在所述半导体氧化物层23上沉积栅绝缘材料,所述栅绝缘材料包括但不限于氧化硅、氮化硅,厚度为1500埃~4000埃。然后用PVD工艺在所述栅绝缘材料上沉积一层栅极材料,所述栅极材料包括但不限于铝/钼/铜/钛等金属,厚度为1000埃~5000埃,再依次利用黄光工艺和刻蚀工艺制得具有图形的绝缘层24和栅极25,所述栅极25对应所述半导体氧化物层23设置。
如图2D所示,采用CVD工艺在所述栅极25上沉积间绝缘层26,所述间绝缘层26的材料包括但不限于氧化硅、氮化硅等,所述间绝缘层26的厚度为1500埃~4000埃,再利用黄光工艺和干蚀刻工艺对所述间绝缘层26进行挖孔,在对应所述半导体氧化物层23的位置形成间绝缘层过孔260。
如图2E所示,采用PVD工艺在所述间绝缘层26上沉积形成源漏金属层,所述源漏金属层的材料包括但不限于铝/钼/铜/钛等金属,所述源漏金属层的厚度为1000埃~5000埃。再依次利用黄光工艺和刻蚀工艺制得具有图形的源漏极27。之后采用CVD工艺沉积一层钝化层28,所述钝化层28的材料包括但不限于氧化硅,所述钝化层28的厚度为1000埃~3000埃。
本实施例提供的所述阵列基板的制备方法,相较于传统方法,可以将退火制程温度由原来320℃及250℃降低为150℃,且制程时间由原来3h或2h变为1h。因此,大大缩短了制程时间,避免高温造成膜层的脱落、变形、损伤等现象,提高了器件的稳定性和可靠性。
本申请提供的所述阵列基板可用于液晶面板,也可用于有机发光致电器件,此处不做限制。
本申请还提供一种采用上述制备方法制备的阵列基板,结合图2A~2E所示,所述阵列基板在氧气气氛下并结合高频振荡电源进行退火制程,所述阵列基板包括缓冲层和半导体氧化物层;其中,所述氧气产生的氧离子和/或氧自由基用于修补所述缓冲层以及所述半导体氧化物层表面的氧缺陷,从而提高了器件的稳定性和可靠性。具体参照上述实施例中的描述,此处不再赘述。
综上所述,本申请提供的阵列基板以及制备方法,通过将阵列基板置于氧气的气氛下,并将退火温度控制在150℃左右,对氧气加入高频振荡电源,使氧气转化为等离子体状态,由氧气产生的氧离子和/或氧自由基用于修补阵列基板上膜层的氧缺陷,能够缩短生产周期,避免退火高温造成膜层的脱落、变形、损伤等现象,提高了器件的稳定性和可靠性。
综上所述,虽然本申请已以优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。
Claims (8)
1.一种阵列基板的制备方法,其特征在于,所述方法包括以下步骤:
步骤S10,一阵列基板上制备有缓冲层,将所述阵列基板置于反应室内并通入氧气,使所述阵列基板在氧气气氛下加热,加热至温度范围为100℃~200℃之间,进行退火制程;
步骤S20,对所述氧气加入高频振荡电源,使所述氧气转化为等离子体状态,退火处理0.5小时~1.5小时,产生的氧离子和/或氧自由基用于修补所述缓冲层表面的氧缺陷;
步骤S30,在所述缓冲层上制备半导体氧化物层,将制备有所述半导体氧化物层的所述阵列基板置于所述氧气气氛下,并加热至温度范围为100℃~200℃之间,进行退火制程;
步骤S40,对所述氧气加入高频振荡电源,使所述氧气转化为等离子体状态,退火处理0.5小时~1.5小时,产生的所述氧离子和/或所述氧自由基用于修补所述半导体氧化物层表面的氧缺陷。
2.根据权利要求1所述的制备方法,其特征在于,在步骤S10和步骤S30中,加热至温度为150℃。
3.根据权利要求1所述的制备方法,其特征在于,所述退火处理的时间为1小时。
4.根据权利要求1所述的制备方法,其特征在于,所述缓冲层的材料包括氧化硅,所述缓冲层的厚度为2000埃~5500埃之间。
5.根据权利要求1所述的制备方法,其特征在于,所述半导体氧化物层为铟镓锌氧化物层,所述半导体氧化物层的厚度为300埃~1000埃。
6.一种如权利要求1~5任一权利要求所述的制备方法制备的阵列基板,其特征在于,所述阵列基板在氧气气氛下进行退火制程,所述阵列基板包括:
衬底基板;
缓冲层,制备于所述衬底基板上;
半导体氧化物层,间隔的制备于所述缓冲层上;
其中,所述氧气产生的氧离子和/或氧自由基用于修补所述缓冲层以及所述半导体氧化物层表面的氧缺陷。
7.根据权利要求6所述的阵列基板,其特征在于,所述阵列基板还包括金属遮光层,所述金属遮光层间隔的制备于所述衬底基板上,并与所述半导体氧化物层以所述缓冲层隔开。
8.根据权利要求7所述的阵列基板,其特征在于,所述半导体氧化物层位于所述金属遮光层遮蔽的范围内,所述半导体氧化物层为铟镓锌氧化物层。
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