CN103985637A - 低温多晶硅薄膜晶体管及其制作方法和显示装置 - Google Patents

低温多晶硅薄膜晶体管及其制作方法和显示装置 Download PDF

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CN103985637A
CN103985637A CN201410182783.XA CN201410182783A CN103985637A CN 103985637 A CN103985637 A CN 103985637A CN 201410182783 A CN201410182783 A CN 201410182783A CN 103985637 A CN103985637 A CN 103985637A
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film transistor
gate insulation
active layer
insulation layer
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CN103985637B (zh
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田慧
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BOE Technology Group Co Ltd
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Abstract

本发明涉及显示技术领域，公开了一种低温多晶硅薄膜晶体管及其制作方法和一种显示装置，所述低温多晶硅薄膜晶体管的制作方法包括：在基板上形成多晶硅薄膜，并对所述多晶硅薄膜进行图案化处理，形成有源层；在所述有源层上形成栅绝缘层，并对所述栅绝缘层和有源层进行氢化处理。采用本发明技术方案，在栅绝缘层制作完成之后，直接对栅绝缘层和有源层进行氢化处理，氢只需穿过栅绝缘层到达栅绝缘层和有源层的界面对悬挂键进行钝化，并修补有源层的晶界缺陷，大大缩短了氢扩散的距离，减少了氢化工艺的时间，进而大大降低了薄膜晶体管的工艺成本。

Description

低温多晶硅薄膜晶体管及其制作方法和显示装置
技术领域
本发明涉及显示技术领域，特别是涉及一种低温多晶硅薄膜晶体管及其制作方法和一种显示装置。
背景技术
低温多晶硅薄膜晶体管(Low Temperature Poly-Silicon Thin FilmTransistor，简称LTPS-TFT)由于具有较高的迁移率和稳定性等优点，已经普遍应用在显示器上，如有源矩阵有机发光显示器(Active Matrix Organic LightEmitting Diode，简称AMOLED)，有源矩阵液晶显示器(Active Matrix LiquidCrystal Display，简称AMLCD)等。
上述类型显示器的TFT的制备过程一般是在基板上形成多晶硅薄膜，并对多晶硅薄膜图案化形成薄膜晶体管的有源层；在有源层上形成栅绝缘层；在栅绝缘层上形成栅极；再在有源层内注入离子分别形成源极区域和漏极区域；沉积覆盖栅极以及栅绝缘层的层间介质层；形成直达源极区域和漏极区域的接触孔；再形成金属层并图案化形成源极和漏极，源极和漏极通过接触孔分别电连接源极区域和漏极区域。在上述TFT的制备过程中，多晶硅薄膜与栅绝缘层之间的界面会产生具有未成键轨道的悬挂键，这是多晶硅晶界的界面态密度增加的很重要的因素，由于悬挂键的影响从而导致薄膜晶体管的载流子迁移率下降，阈值电压升高等显示器件的性能退化问题。
为了解决上述问题，现有技术最常用的方法是制作完成薄膜晶体管之后，即在制作完金属层后，在氢气氛中进行退火使氢扩散至栅绝缘层和多晶硅层；还有一种常用方法是在利用层间介质层的氮化硅薄膜为氢来源进行TFT进行热处理，采用上述的氢化方法向悬挂键供氢从而钝化多晶硅薄膜与栅绝缘层界面处的悬挂键。但是由于这些方法的氢通常需要穿过多层薄膜进入有源层，使得氢的扩散距离很长，为了充分进行氢化，就需要很长的时间进行热处理，增加了工艺成本和时间；同时，长时间的热处理会对TFT器件造成一定的热影响，进而造成TFT电学性能的不良，特别是在TFT的尺寸很大的情况下，这种影响是很大的。
现有技术的缺陷在于，氢化处理时氢穿过的膜层较多，热处理时间较长，导致工艺成本的升高，也易造成薄膜晶体管的电学性能不良。
发明内容
本发明的目的是提供一种低温多晶硅薄膜晶体管及其制作方法和一种显示装置，用以缩短薄膜晶体管制作中氢化处理的时间，进而降低薄膜晶体管的工艺成本。
本发明实施例首先提供一种低温多晶硅薄膜晶体管的制作方法，包括：
在基板上形成多晶硅薄膜，并对所述多晶硅薄膜进行图案化处理，形成有源层；
在所述有源层上形成栅绝缘层，并对所述栅绝缘层和有源层进行氢化处理。
在本发明技术方案中，在栅绝缘层制作完成之后，直接对栅绝缘层和有源层进行氢化处理，氢只需穿过栅绝缘层到达栅绝缘层和有源层的界面对悬挂键进行钝化，并修补有源层的晶界缺陷，大大缩短了氢扩散的距离，减少了氢化处理工艺的时间，进而大大降低了薄膜晶体管的工艺成本。
优选的，对所述栅绝缘层和有源层进行氢化处理具体为：在260～400℃的温度条件下采用氮氢混合等离子体对栅绝缘层和有源层进行氢化处理。
上述氢化处理优选的在一定的温度条件下采用等离子体进行氢化处理。氮氢混合等离子体可以提供高反应活性的氮等离子体和氢等离子体，在栅绝缘层和有源层的界面处更容易与未饱和的硅悬挂键结合形成较稳定的Si-N(硅氮)键和Si-H(硅氢)键，可以有效降低界面态密度和改善界面特性，达到比单一氢气退火更好的氢化效果，能够有效提升显示器件的整体电学性能。
优选的，氮氢混合等离子体的氮氢比不限，优选的，氮氢比为1：1～1:10，特别是当氮氢比为1:3时，不仅具有好的氢化效果，而且等离子体也容易制备，即此时的氮氢混合等离子体为氨等离子体。
优选的，在所述有源层上形成栅绝缘层，并对所述栅绝缘层和有源层进行氢化处理，具体包括：
在等离子体增强化学气相沉积设备中，在所述有源层上沉积栅绝缘层；
对沉积后的栅绝缘层进行退火处理，在对沉积后的栅绝缘层进行退火处理的过程中，对栅绝缘层和有源层进行氢化处理。
沉积后的栅绝缘层需要进行退火处理，而对栅绝缘层和有源层进行氢化处理也需要一定的温度，因此，在对沉积后的栅绝缘层进行退火处理的过程中，对栅绝缘层和有源层进行氢化处理，可以使得氢能迅速扩散至与有源层的界面处进行钝化界面以及修补有源层的晶界缺陷，大大缩短了氢扩散的距离，进而大大缩短了氢化工艺的时间。
优选的，上述任一种低温多晶硅薄膜晶体管的制作方法，还包括：
在所述栅绝缘层上形成栅极金属层，并对所述栅极金属层进行图案化处理形成栅极；
以栅极为掩膜对有源层进行离子注入，形成源极区域和漏极区域；
形成覆盖所述栅极和栅极绝缘层的层间介质层；
对层间介质层和栅绝缘层进行图案化处理，形成位于源极区域和漏极区域上方的接触孔；
在层间介质层上形成源漏金属层，并对源漏金属层进行图案化处理形成源极和漏极，所述源极和漏极分别通过接触孔与源极区域和漏极区域电连接。
优选的，在基板上形成多晶硅薄膜具体包括：
在基板上形成非晶硅薄膜；
对所述非晶硅薄膜进行固相晶化或准分子激光退火，形成多晶硅薄膜。
优选的，在基板上形成非晶硅薄膜之前，还包括：在基板上形成缓冲层。
优选的，所述非晶硅薄膜和缓冲层分别采用等离子体增强化学气相沉积形成。
本发明还涉及由上述任一种低温多晶硅薄膜晶体管的制作方法制得的低温多晶硅薄膜晶体管。由于该低温薄膜晶体管的氢化处理降低了工艺成本，因此，该低温多晶硅薄膜晶体管相对于现有技术的薄膜晶体管，其成本也有所降低。
本发明还涉及一种显示装置，包括具有呈阵列分布的多个薄膜晶体管的阵列基板，所述薄膜晶体管采用上述任一种低温多晶硅薄膜晶体管的制作方法得到。该显示装置特别是可以为AMOLED和AMLCD。
附图说明
图1为本发明一实施例提供的低温多晶硅薄膜晶体管的制作方法的流程示意图；
图2为本发明一较优实施例的低温多晶硅薄膜晶体管的制作方法的流程示意图；
图3为本发明一较优的实施例制得的低温多晶硅薄膜晶体管的结构示意图。
附图标记：
1-基板  2-缓冲层  3-有源层  4-栅绝缘层  5-栅极
6-源极区域  7-漏极区域  8-层间介质层  9-源极  10-漏极
具体实施方式
为了解决现有技术中存在的薄膜晶体管制作过程中氢化处理时间较长的技术问题，本发明提供了一种低温多晶硅薄膜晶体管及其制作方法和一种显示装置。在该技术方案中，在栅绝缘层制作完成之后，直接对栅绝缘层和有源层进行氢化处理，氢只需穿过栅绝缘层到达栅绝缘层和有源层的界面对悬挂键进行钝化，并修补有源层的晶界缺陷，大大缩短了氢扩散的距离，减少了氢化工艺的时间，进而大大降低了薄膜晶体管的工艺成本。为使本发明的目的、技术方案和优点更加清楚，以下举具体实施例对本发明作进一步详细说明。
本发明实施例首先提供一种低温多晶硅薄膜晶体管的制作方法，如图1所示，图1为本发明一实施例提供的低温多晶硅薄膜晶体管的制作方法的流程示意图，所述制作方法包括：
步骤101、在基板上形成多晶硅薄膜，并对所述多晶硅薄膜进行图案化处理，形成有源层；
步骤102、在所述有源层上形成栅绝缘层，并对所述栅绝缘层和有源层进行氢化处理。
在本发明技术方案中，在栅绝缘层制作完成之后，直接对栅绝缘层和有源层进行氢化处理，氢只需穿过栅绝缘层到达栅绝缘层和有源层的界面对悬挂键进行钝化，并修补有源层的晶界缺陷，大大缩短了氢扩散的距离，减少了氢化工艺的时间，进而大大降低了薄膜晶体管的工艺成本。
在上述实施例的制作方法中，优选的，对所述栅绝缘层和有源层进行氢化处理具体为：在260～400℃的温度条件下采用氮氢混合等离子体对栅绝缘层和有源层进行氢化处理。
上述氢化处理优选的在一定的温度条件下采用等离子体进行氢化处理，该温度最低可以为260℃，最高可以为400℃，还可以为280℃、300℃、350℃或380℃，在260～400℃的温度范围内，适于氢穿过栅绝缘层进入到多晶硅表面，且该温度取值范围不高，不易对薄膜晶体管造成影响，可以提高产品的良率。氮氢混合等离子体可以提供高反应活性的氮等离子体和氢等离子体，在栅绝缘层和有源层的界面处更容易与未饱和的硅悬挂键结合形成较稳定的Si-N(硅氮)键和Si-H(硅氢)键，可以有效降低界面态密度和改善界面特性，达到比单一氢气退火更好的氢化效果，能够有效提升显示器件的整体电学性能。
优选的，氮氢混合等离子体的氮氢比不限，优选的，氮氢比为1：1～1:10，特别是当氮氢比为1:3时，不仅具有好的氢化效果，而且等离子体也容易制备，即此时的氮氢混合等离子体为氨等离子体。
优选的，在所述有源层上形成栅绝缘层，并对所述栅绝缘层和有源层进行氢化处理，具体包括：
在等离子体增强化学气相沉积设备中，在所述有源层上沉积栅绝缘层；
对沉积后的栅绝缘层进行退火处理，在对沉积后的栅绝缘层进行退火处理的过程中，对栅绝缘层和有源层进行氢化处理。
等离子体增强化学气相沉积法(Plasma Enhanced Chemical VaporDeposition，简称PECVD)，是借助微波或射频等使含有薄膜组成原子的气体电离，在局部形成等离子体，而等离子体化学活性很强，很容易发生反应，在基片上沉积出所期望的薄膜。为了使化学反应能在较低的温度下进行，利用了等离子体的活性来促进反应，采用等离子体沉积后的栅绝缘层需要进行退火处理，而对栅绝缘层和有源层进行氢化处理也需要一定的温度，因此，在对沉积后的栅绝缘层进行退火处理的过程中，对栅绝缘层和有源层进行氢化处理，可以使得氢能迅速扩散至与有源层的界面处进行钝化界面以及修补有源层的晶界缺陷，大大缩短了氢扩散的距离，进而大大缩短了氢化工艺的时间。
优选的，上述任一种低温多晶硅薄膜晶体管的制作方法，还包括：
在所述栅绝缘层上形成栅极金属层，并对所述栅极金属层进行图案化处理形成栅极；
以栅极为掩膜对有源层进行离子注入，形成源极区域和漏极区域；
形成覆盖所述栅极和栅极绝缘层的层间介质层；
对层间介质层和栅绝缘层进行图案化处理，形成位于源极区域和漏极区域上方的接触孔；
在层间介质层上形成源漏金属层，并对源漏金属层进行图案化处理形成源极和漏极，所述源极和漏极分别通过接触孔与源极区域和漏极区域电连接。
在上述步骤中，栅极、源极和漏极可以为单层金属层，所用材质如钼(Mo)，铝(Al)，钛(Ti)，也可以为钼铝钛形成的复合层。离子注入工艺的离子种类为硼(B)离子或者磷(P)离子，本发明的实施例对此不进行限制。
优选的，在基板上形成多晶硅薄膜具体包括：
在基板上形成非晶硅薄膜；
对所述非晶硅薄膜进行固相晶化或准分子激光退火，形成多晶硅薄膜。
优选的，在基板上形成非晶硅薄膜之前，还包括：在基板上形成缓冲层。例如，缓冲层的材质可以为氧化硅和氮化硅的复合薄膜。
优选的，所述非晶硅薄膜和缓冲层分别采用等离子体增强化学气相沉积形成。
以下列举一个较优的实施例来说明本发明的低温薄膜晶体管的制作方法，但本发明并不限于下述实施例。如图2所示，图2为本发明一较优实施例的低温薄膜晶体管的制作方法的流程示意图，所述制作方法包括：
步骤201、在基板上形成缓冲层；其中，基板可以为玻璃基板或其他适用于制作TFT衬底的材料，缓冲层可以采用PECVD法制作，其可以为氧化硅和氮化硅的复合薄膜；
步骤202、在缓冲层上形成非晶硅薄膜；其中，非晶硅薄膜也可以采用PECVD法制作；
步骤203、对所述非晶硅薄膜进行固相晶化或准分子激光退火，形成多晶硅薄膜；
步骤204、对所述多晶硅薄膜进行图案化处理，形成有源层；
步骤205、在所述有源层上形成栅绝缘层，并对所述栅绝缘层和有源层进行氢化处理；该步骤在PECVD设备中进行，沉积完栅绝缘层，在对栅绝缘层进行退火处理的过程中，就采用氨等离子体对栅绝缘层和有源层进行氢化处理，即栅绝缘层沉积步骤与氢化处理步骤是前后连续进行的，中间没有时间间隔，氢化处理在260～400度的条件下进行；
步骤206、在所述栅绝缘层上形成栅极金属层，并对所述栅极金属层进行图案化处理形成栅极；其中栅极材质可以为金属钼、铝、钛；
步骤207、以栅极为掩膜对有源层进行离子注入，形成源极区域和漏极区域；其中离子可以为硼或磷；
步骤208、形成覆盖所述栅极和栅极绝缘层的层间介质层；其中，层间介质层可以采用硅氧化物或硅氮化物形成；
步骤209、对层间介质层和栅绝缘层进行图案化处理，形成位于源极区域和漏极区域上方的接触孔；其中，接触孔可以通过图案化和刻蚀处理；
步骤210、在层间介质层上形成源漏金属层，并对源漏金属层进行图案化处理形成源极和漏极，所述源极和漏极分别通过接触孔与源极区域和漏极区域电连接。
形成的薄膜晶体管的结构如图3所示，图3为本发明一较优的实施例制得的低温多晶硅薄膜晶体管的结构示意图，包括基板1，位于基板1上的缓冲层2，位于缓冲层2之上的有源层3、形成于有源层3内的源极区域6和漏极区域7，位于有源层3上的栅绝缘层4，位于栅绝缘层4之上的栅极5，覆盖栅极5和栅绝缘层4的层间介质层8，分别通过接触孔与源极区域6电连接的源极9以及与漏极区域7电连接的漏极10。现有技术中在制作完TFT后再进行氢化处理，氢化处理的温度为350～420摄氏度，时间为60～120分钟，而本发明中氢化处理温度仅为260～400摄氏度，时间仅为5～30分钟，这是由于本发明在制作完栅极绝缘层4之后就进行氢化处理，因此，氢的扩散距离短，大大减少了氢化处理工艺的时间。并且采用氨等离子体，它提供了高反应活性氮等离子体和氢等离子体，在有源层和绝缘层的界面处更容易与未饱和的Si悬挂键结合形成较稳定的Si-N键和Si-H键，可以有效降低界面态密度和改善界面特性，达到比单一氢气退火更好的氢化效果，能够有效提升显示器件的整体电学性能。
本发明还涉及由上述任一种低温多晶硅薄膜晶体管的制作方法制得的低温多晶硅薄膜晶体管。由于该低温薄膜晶体管的氢化处理降低了工艺成本，因此，该低温多晶硅薄膜晶体管相对于现有技术的薄膜晶体管，其成本也有所降低。
本发明还涉及一种显示装置，包括具有呈阵列分布的多个薄膜晶体管的阵列基板，所述薄膜晶体管采用上述任一种低温多晶硅薄膜晶体管的制作方法得到。所述显示装置具体可以为：液晶面板、电子纸、OLED面板、液晶电视、液晶显示器、数码相框、手机、平板电脑等具有任何显示功能的产品或部件。该显示装置特别是可以为AMOLED和AMLCD。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (10)

1.一种低温多晶硅薄膜晶体管的制作方法，其特征在于，包括：
在基板上形成多晶硅薄膜，并对所述多晶硅薄膜进行图案化处理，形成有源层；
在所述有源层上形成栅绝缘层，并对所述栅绝缘层和有源层进行氢化处理。
2.如权利要求1所述的低温多晶硅薄膜晶体管的制作方法，其特征在于，对所述栅绝缘层和有源层进行氢化处理具体为：在260～400℃的温度条件下采用氮氢混合等离子体对栅绝缘层和有源层进行氢化处理。
3.如权利要求2所述的低温多晶硅薄膜晶体管的制作方法，其特征在于，所述氮氢混合等离子体为氨等离子体。
4.如权利要求1～3任一项所述的低温多晶硅薄膜晶体管的制作方法，其特征在于，在所述有源层上形成栅绝缘层，并对所述栅绝缘层和有源层进行氢化处理，具体包括：
在等离子体增强化学气相沉积设备中，在所述有源层上沉积栅绝缘层；
对沉积后的栅绝缘层进行退火处理，在对沉积后的栅绝缘层进行退火处理的过程中，对栅绝缘层和有源层进行氢化处理。
5.如权利要求1所述的低温多晶硅薄膜晶体管的制作方法，其特征在于，还包括：
在所述栅绝缘层上形成栅极金属层，并对所述栅极金属层进行图案化处理形成栅极；
以栅极为掩膜对有源层进行离子注入，形成源极区域和漏极区域；
形成覆盖所述栅极和栅极绝缘层的层间介质层；
对层间介质层和栅绝缘层进行图案化处理，形成位于源极区域和漏极区域上方的接触孔；
在层间介质层上形成源漏金属层，并对源漏金属层进行图案化处理形成源极和漏极，所述源极和漏极分别通过接触孔与源极区域和漏极区域电连接。
6.如权利要求1所述的低温多晶硅薄膜晶体管的制作方法，其特征在于，在基板上形成多晶硅薄膜具体包括：
在基板上形成非晶硅薄膜；
对所述非晶硅薄膜进行固相晶化或准分子激光退火，形成多晶硅薄膜。
7.如权利要求6所述的低温多晶硅薄膜晶体管的制作方法，其特征在于，在基板上形成非晶硅薄膜之前，还包括：在基板上形成缓冲层。
8.如权利要求7所述的低温多晶硅薄膜晶体管的制作方法，其特征在于，所述非晶硅薄膜和缓冲层分别采用等离子体增强化学气相沉积形成。
9.一种低温多晶硅薄膜晶体管，其特征在于，采用如权利要求1～8任一项所述的低温多晶硅薄膜晶体管的制作方法得到。
10.一种显示装置，其特征在于，包括具有呈阵列分布的多个薄膜晶体管的阵列基板，所述薄膜晶体管采用如权利要求1～8任一项所述的低温多晶硅薄膜晶体管的制作方法得到。
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