CN107039284A - 一种制作低温多晶硅薄膜晶体管的方法 - Google Patents
一种制作低温多晶硅薄膜晶体管的方法 Download PDFInfo
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Abstract
本发明属于显示面板技术领域。本发明公开了一种制作低温多晶硅薄膜晶体管的方法,包括:依次在衬底基板上形成栅极层、有源层、源漏极接触层和源漏电极。形成源漏极接触层的过程包括:形成沟道保护层;使用包含乙硼烷的反应气体,通过等离子体增强化学气相沉积的方法沉积欧姆接触层,并对其进行构图,形成源漏极接触层。在沉积欧姆接触层的过程中,硼离子会进入源漏极接触层中。此种方法不再需要采用掩膜定义硼离子植入区域,省去了硼离子植入的过程,简化了工艺流程,降低了制造成本。
Description
技术领域
本发明涉及显示面板技术领域,尤其涉及一种制作低温多晶硅薄膜晶体管的方法。
背景技术
在各种显示装置的像素单元中,通过施加驱动电压来驱动显示装置的薄膜晶体管(Thin Film Transistor,TFT)被大量应用。在TFT的有源层一直使用稳定性和加工向较好的非晶硅(a-Si)材料,但是a-Si材料的载流子迁移率较低,不能满足大尺寸、高分辨率显示器件的要求,特别是不能满足下一代有源矩阵式有机发光显示器件的要求。
与非晶硅相比,低温多晶硅(Low Temperature Poly-silicon,LTPS)由于电子迁移率高、亚阈值摆幅好、开关态电流比大、耗电低,同时可以制作高密度像素,且可以应用在柔性有机发光二极管(OLED)基板上等特点,近几年引起了广泛的关注。但是,在制作低温多晶硅薄膜晶体管(LTPS-PTFT)的过程中,需要用掩膜定义源漏极接触区域,然后利用离子植入机植入硼,再进行高温快速退火活化后形成源漏极接触区,其制作工艺流程复杂、制作成本高。因此,如何减少低温多晶硅薄膜晶体管的制作工艺流程并降低制作成本成为亟待解决的问题。
发明内容
针对现有技术中的如何减少低温多晶硅薄膜晶体管的制作工艺流程并降低其制作成本的问题,本发明提出了一种制作低温多晶硅薄膜晶体管的方法。
本发明提出的制作低温多晶硅薄膜晶体管的方法,其特征在于,所述方法包括以下步骤:
S11:在衬底基板上形成栅极层的过程;
S12:形成有源层的过程;
S13:形成源漏极接触层的过程;
S14:形成源漏电极的过程,
其中,形成所述源漏极接触层的过程包括:形成沟道保护层,并通过等离子体增强化学气相沉积的方法沉积欧姆接触层,其中使用的反应气体包含乙硼烷,然后,对所述欧姆接触层进行图形化处理,形成所述源漏极接触层。
采用上述方法形成源漏极接触层,由于使用的反应气体中包含有乙硼烷,在采用等离子体增强化学气相沉积(PECVD)的方法沉积欧姆接触层的过程中,硼离子会进入欧姆接触层中,使得形成的源漏极接触层中包含有硼离子,从而降低了源漏极接触层的阻抗,使之与源漏极的接触阻抗减小。此种方法不再需要采用掩膜定义硼离子植入区域,同时省去了硼离子植入的过程,简化了工艺流程,降低了制造成本。
作为对本发明的进一步改进,所述反应气体还包括硅烷和氢气。此时,反应气体为硅烷、氢气和乙硼烷的混合气体。
进一步,沉积所述欧姆接触层使用的材料包括P+a-Si。
作为对本发明的进一步改进,形成所述沟道保护层的过程包括:在所述有源层上沉积蚀刻阻挡层,然后对所述蚀刻阻挡层依次进行加热氢化处理和图形化处理,形成所述沟道保护层。
进一步,所述蚀刻阻挡层包括氧化硅层或氮化硅层中的至少一种。蚀刻阻挡层可以为氧化硅层或氮化硅层,也可以为氧化硅层和氮化硅层的叠加层。
作为对本发明的进一步改进,形成所述有源层的过程包括:在衬底基板全表面沉积栅极绝缘层,然后沉积非晶硅层,通过准分子激光退火工艺使所述非晶硅层转变为多晶硅层,对所述多晶硅层进行图形化处理,形成所述有源层。
通过准分子激光退火工艺实现多晶硅层和离子激活,避免了采用热退火工艺导致的衬底基板整体受热影响柔性显示装置的问题,有利于实现柔性显示。此外,准分子激光退火工艺的局部高温还可以提高多晶硅的晶格完整性,从而提高了TFT的性能。
作为对本发明的进一步改进,形成所述栅极层的过程包括:在衬底基板全表面沉积第一金属层,对所述第一金属层进行图形化处理,形成所述栅极层。进一步,在沉积所述第一金属层之前,在衬底基板全表面制作缓冲层。所述缓冲层包括氮化硅层或氧化硅层中的至少一种。
缓冲层可以提高栅极层与衬底基板之间的附着程度。同时,还可以防止衬底基板中的金属离子扩散至栅极层,减少漏电流的产生。
作为对栅极层的进一步改进,所述栅极层的材料包括钼、钽、铝、钨中的至少一种。这些金属均为TFT制作过程中常用的金属材料,方便使用。
作为对本发明的进一步改进,形成源漏电极层的过程包括沉积第二金属层,对所述第二金属层进行图形化处理,形成所述源漏电极层。形成第二金属层的金属包括钼、铝中的至少一种。
本发明同时提出了一种低温多晶硅薄膜晶体管,该低温多晶硅薄膜晶体管采用上述方法制作而成。
综上所述,本发明提出的制作低温多晶硅薄膜晶体管的方法,在形成源漏极接触层的过程中,采用PECVD的方法沉积一层欧姆接触层,同时使用的反应气体中包含有乙硼烷。从而,在沉积欧姆接触层的过程中,硼离子会进入其中,从而降低了源漏极接触层的阻抗,使之与源漏极的接触阻抗减小。这种形成源漏极接触层的方法,不再需要采用掩膜定义硼离子植入区域,同时省去了硼离子植入的过程,简化了工艺流程,降低了制造成本。本发明提出的低温多晶硅薄膜晶体管由于采用本发明提出的方法制成,从而降低了制造成本。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中:
图1为本发明的制作低温多晶硅薄膜晶体管的方法示意图;
图2为形成栅极层的结构示意图;
图3为形成有源层后的结构示意图;
图4为形成源漏极接触层后的结构示意图;
图5为形成源漏电极层后的结构示意图;
图6为包含有本发明的低温多晶硅薄膜晶体管的阵列基板的结构示意图。
在附图中,相同的部件使用相同的附图标记。附图并未按照实际的比例。
具体实施方式
以下将结合附图对本发明的内容作出详细的说明,下文中的“上”“下”“左”“右”均为相对于图示方向,不应理解为对本发明的限制。
图1示出了本实施例中的制作低温多晶硅薄膜晶体管的方法,主要包括以下步骤:
S11:在衬底基板上形成栅极层的过程;
S12:形成有源层的过程;
S13:形成源漏极接触层的过程;
S14:形成源漏电极层的过程。
下面将对各个过程进行更加详细的说明。
S11:在衬底基板上形成栅极层的过程。如图2所示,首先,在衬底基板111的全表面上制作缓冲层112,缓冲层112包括氮化硅层1121和氧化硅层1122。当然,在其他实施例中,缓冲层112也可以只包括氮化硅层1121或氧化硅层1122。然后,在缓冲层112上沉积第一金属层,优选地,构成该第一金属层的材料为钼。在其他实施例中,该第一金属层的材料可以为钼、钽、铝、钨中的至少一种。采用照相蚀刻技术对第一金属层进行构图,形成栅极层113。
缓冲层112能够提高栅极层113与衬底基板111之间的附着程度,同时,还可以防止衬底基板111中的金属离子扩散至栅极层113,减少漏电流的产生。
当然,在其他实施例中,在形成栅极层113的过程中,不含有形成缓冲层的过程。
S12:形成有源层的过程。如图3所示,在栅极层113的上方沉积栅极绝缘层121,优选地,栅极绝缘层121的材料为氧化硅。接着,在栅极绝缘层121上方沉积非晶硅层,采用准分子激光退火工艺对非晶硅层进行处理,使之转变为多晶硅层。然后,对多晶硅层进行构图,形成有源层122。
在此过程中,通过准分子激光退火工艺实现多晶硅层,避免了采用热退火工艺导致的衬底基板整体受热影响柔性显示的问题,有利于实现柔性显示。此外,准分子激光退火工艺的局部高温还可以提高多晶硅的晶格完整性,从而提高了TFT的性能。
S13:形成源漏极接触层的过程。如图4所示,在衬底基板111的有源层122上方的全表面沉积蚀刻阻挡层,优选地,该蚀刻阻挡层包括氧化硅层和氮化硅层。在其他实施例中,蚀刻阻挡层也可仅包括氧化硅层或氮化硅层。对蚀刻阻挡层进行加热氢化处理,并采用照相蚀刻技术对其进行构图,形成沟道保护层131。由于该实施例中的蚀刻阻挡层包括氧化硅层和氮化硅层,所以,这里的沟道保护层131包括第一沟道保护层1311和第二沟道保护层1312。
在沟道保护层131上方,使用包含乙硼烷的反应气体,通过PECVD的方法沉积欧姆接触层。该欧姆接触层的材料优选为P+a-Si,反应气体优选为为硅烷、氢气和乙硼烷的混合气体。在这里,同样采用照相蚀刻技术对该欧姆接触层进行构图,形成源漏极接触层132。当使用的反应气体包含乙硼烷时,在采用PECVD的方法沉积欧姆接触层中,硼离子会进入欧姆接触层中,使得形成的源漏极接触层132中包含有硼离子,从而降低了源漏极接触层132的阻抗,使之与源漏极的接触阻抗减小。此种方法不再需要采用掩膜定义硼离子植入区域,同时省去了硼离子植入的过程,简化了工艺流程,降低了制造成本。
当欧姆接触层的材料为P+a-Si时,制作出的薄膜晶体管为P型。当然,欧姆接触层的材料也可以为N+a-Si,此时制作出的薄膜晶体管为N型。
S14:形成源漏电极层的过程。如图5所示,在源漏极接触层132的上方,沉积第二金属层,优选地,该第二金属层的材料包括钼、铝中的至少一种。采用照相蚀刻技术对第二金属层进行构图,形成源漏电极层141。
本发明提出的低温多晶硅薄膜晶体管,采用上述方法制作而成。
实施例二:
在制作包含有以上述方法制作的低温多晶硅薄膜晶体管的阵列基板时,除了包括实施例一总的制作步骤外,还包括步骤S15。如图6所示,在源漏电极层141上方制作有机光阻平坦绝缘层151,接着制作Anode电极层152。然后制作像素定义层(PDL)和隔离柱(PS)层。
最后说明的是,以上实施例仅用于说明本发明的技术方案而非限制,尽管参照较佳实施例对本发明进行了详细说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或者等同替换。尤其是,只要不存在结构上的冲突,各实施例中的特征均可相互结合起来,所形成的组合式特征仍属于本发明的范围内。只要不脱离本发明技术方案的宗旨和范围,其均应涵盖在本发明的权利要求范围当中。
Claims (10)
1.一种制作低温多晶硅薄膜晶体管的方法,其特征在于,所述方法包括以下步骤:
S11:在衬底基板上形成栅极层的过程;
S12:形成有源层的过程;
S13:形成源漏极接触层的过程;
S14:形成源漏电极层的过程,
其中,形成所述源漏极接触层的过程包括:
形成沟道保护层,并通过等离子体增强化学气相沉积的方法沉积欧姆接触层,其中使用的反应气体包含乙硼烷,然后,对所述欧姆接触层进行图形化处理,形成所述源漏极接触层。
2.根据权利要求1所述的方法,其特征在于,所述反应气体还包括硅烷和氢气。
3.根据权利要求1或2所述的方法,其特征在于,沉积所述欧姆接触层使用的材料包括P+a-Si。
4.根据权利要求1或2所述的方法,其特征在于,形成所述沟道保护层的过程包括:在所述有源层上沉积蚀刻阻挡层,然后对所述蚀刻阻挡层依次进行加热氢化处理和图形化处理,形成所述沟道保护层。
5.根据权利要求4所述的方法,其特征在于,所述蚀刻阻挡层包括氧化硅层或氮化硅层中的至少一种。
6.根据权利要求1所述的方法,其特征在于,形成所述有源层的过程包括:在衬底基板全表面沉积栅极绝缘层,然后沉积非晶硅层,通过准分子激光退火工艺使所述非晶硅层转变为多晶硅层,对所述多晶硅层进行图形化处理,形成所述有源层。
7.根据权利要求1所述的方法,其特征在于,形成所述栅极层的过程包括:在衬底基板全表面沉积第一金属层,对所述第一金属层进行图形化处理,形成所述栅极层。
8.根据权利要求7所述的方法,其特征在于,在沉积所述第一金属层之前,在衬底基板全表面制作缓冲层。
9.根据权利要求8所述的方法,其特征在于,所述缓冲层包括氮化硅层或氧化硅层中的至少一种。
10.根据权利要求7至9中任意一项所述的方法,其特征在于,所述栅极层的材料包括钼、钽、铝、钨中的至少一种。
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