CN106098628B - Tft背板的制作方法及tft背板 - Google Patents

Tft背板的制作方法及tft背板 Download PDF

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CN106098628B
CN106098628B CN201610399170.0A CN201610399170A CN106098628B CN 106098628 B CN106098628 B CN 106098628B CN 201610399170 A CN201610399170 A CN 201610399170A CN 106098628 B CN106098628 B CN 106098628B
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amorphous silicon
oxygen
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CN106098628A (zh
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周星宇
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种TFT背板的制作方法及TFT背板。本发明的TFT背板的制作方法，通过在缓冲层上制作包括含氧非晶硅薄膜以及位于所述含氧非晶硅薄膜上的不含氧非晶硅薄膜的非晶硅薄膜，使得采用硼离子诱导固相晶化法对所述非晶硅薄膜进行晶化处理时，由于所述非晶硅薄膜与缓冲层的接触界面为含氧非晶硅薄膜，而含氧非晶硅薄膜在高温结晶过程中不容易产生晶核，从而使得晶核的产生仅发生在非晶硅薄膜上表面的硼离子掺杂层中，并且自上而下发生结晶，晶粒质量好，薄膜均一性好，从而达到提高结晶质量及改善均一性的效果。本发明的TFT背板，制程简单，其中的多晶硅层的结晶质量与均一性较好，提升了TFT的性能，增强其驱动效果。

Description

TFT背板的制作方法及TFT背板
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT背板的制作方法及TFT背板。
背景技术
OLED(Organic Light-Emitting Diode，有机发光二极管)显示器，也称为有机电致发光显示器，是一种新兴的平板显示装置，由于其具有制备工艺简单、成本低、功耗低、发光亮度高、工作温度适应范围广、体积轻薄、响应速度快，而且易于实现彩色显示和大屏幕显示、易于实现和集成电路驱动器相匹配、易于实现柔性显示等优点，因而具有广阔的应用前景。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
薄膜晶体管(Thin Film Transistor，简称TFT)是AMOLED显示装置中的主要驱动元件，直接关系到高性能平板显示装置的发展方向。薄膜晶体管具有多种结构，制备相应结构的薄膜晶体管的有源层的材料也具有多种，低温多晶硅(Low Temperature Poly-silicon，简称LTPS)材料是其中较为优选的一种，由于低温多晶硅的原子规则排列，载流子迁移率高，对于电流驱动式的有源矩阵驱动式有机电致发光显示装置而言，低温多晶硅薄膜晶体管可以更好的满足驱动电流要求。
目前采用的一种形成低温多晶硅薄膜的方法是硼离子(Boron)诱导固相晶化(SPC)法，该方法是在非晶硅(a-Si)薄膜的上表面植入硼离子诱导产生晶核，然后自上而下结晶最终形成多晶硅(poly-Si)薄膜，但是，在晶化过程中，通常在非晶硅薄膜的下表面，即非晶硅薄膜与缓冲(buffer)层的界面处也会随机产生一些晶核，发生自下而上的结晶，一般由于应力作用，从下方开始的结晶缺陷比较多，堆叠也不是很好，另一方面下方随机的结晶，也会影响多晶硅薄膜整体的均一性。
发明内容
本发明的目的在于提供一种TFT背板的制作方法，在非晶硅薄膜的晶化过程中可抑制下表面晶核的形成，从而提高结晶质量，改善均一性。
本发明的目的还在于提供一种TFT背板，多晶硅层的结晶质量与均一性较好，提升了TFT的性能，增强其驱动效果。
为实现上述目的，本发明首先提供一种TFT背板的制作方法，包括如下步骤：
步骤1、提供一衬底基板，在所述衬底基板上沉积缓冲层；
步骤2、在所述缓冲层上形成非晶硅薄膜，所述非晶硅薄膜包括位于所述缓冲层上的含氧非晶硅薄膜以及位于所述含氧非晶硅薄膜上的不含氧非晶硅薄膜；
步骤3、对所述非晶硅薄膜进行硼离子掺杂，在所述非晶硅薄膜的上表面形成一硼离子掺杂层，对所述非晶硅薄膜进行快速热退火处理，使所述非晶硅薄膜结晶转化为低温多晶硅薄膜，所述低温多晶硅薄膜包括位于所述缓冲层上的含氧低温多晶硅薄膜及位于所述含氧低温多晶硅薄膜上的不含氧低温多晶硅薄膜；
步骤4、去除所述低温多晶硅薄膜上表面的硼离子掺杂层，对所述低温多晶硅薄膜进行图形化处理，得到间隔设置的第一多晶硅层与第二多晶硅层；
步骤5、在所述第一多晶硅层、第二多晶硅层、及缓冲层上形成栅极绝缘层，采用一道掩模对所述第一多晶硅层的两侧、及整个第二多晶硅层进行N型或者P型重掺杂，在所述第一多晶硅层的两侧形成源极接触区与漏极接触区，所述源极接触区与漏极接触区之间的区域形成沟道区，所述第二多晶硅层经过N型或者P型重掺杂后形成导体；
步骤6、在所述栅极绝缘层上形成对应于所述第一多晶硅层上方的栅极、及对应于所述第二多晶硅层上方的存储电容电极；所述存储电容电极与第二多晶硅层形成存储电容；
在所述栅极、存储电容电极、及栅极绝缘层上沉积层间介电层，在所述层间介电层及栅极绝缘层上形成分别对应于源极接触区及漏极接触区上方的第一通孔、及第二通孔；
步骤7、在所述层间介电层上形成源极与漏极，所述源极、及漏极分别通过第一通孔、及第二通孔与第一多晶硅层的源极接触区、及漏极接触区相接触。
所述含氧非晶硅薄膜的厚度为所述非晶硅薄膜的厚度的十分之一至二十分之一。
所述步骤2包括：
步骤21、在所述缓冲层上方通入硅烷气体和氧气的混合气体，在所述缓冲层上沉积得到含氧非晶硅薄膜；
步骤22、在所述缓冲层上方通入硅烷气体，在所述缓冲层上沉积得到不含氧非晶硅薄膜。
所述步骤21中，所述硅烷气体的流量一直保持不变，所述氧气的流量在步骤21开始时最大，之后逐渐减小，到步骤21结束时减少为零。
所述步骤21中，所述氧气的流量小于或等于所述硅烷气体的流量的十分之一；所述步骤21与步骤22中，所述硅烷气体包括甲硅烷、及乙硅烷中的一种或多种。
所述TFT背板的制作方法还包括：在所述步骤5之后步骤6之前、在所述步骤6形成栅极与存储电容电极之后沉积层间介电层之前、或者在所述步骤6沉积层间介电层之后形成第一通孔与第二通孔之前，对整个基板进行快速热退火处理，使所述步骤5中在所述第一多晶硅层的源极接触区与漏极接触区、及整个第二多晶硅层中掺杂的N型或P型离子活化。
还包括步骤8、在所述源极、漏极、及层间介电层上形成平坦层，在所述平坦层上形成对应于所述漏极上方的第三通孔，在所述平坦层上形成像素电极，所述像素电极通过第三通孔与所述漏极相接触；
在所述像素电极、及平坦层上形成像素定义层，在所述像素定义层上形成对应于所述像素电极上方的第四通孔；
在所述像素定义层上形成间隔设置的数个间隔物。
本发明还提供一种TFT背板，包括：衬底基板、设于所述衬底基板上的缓冲层、设于所述缓冲层上且间隔设置的第一多晶硅层与第二多晶硅层、设于所述第一多晶硅层、第二多晶硅层、及缓冲层上的栅极绝缘层、设于所述栅极绝缘层上且对应于所述第一多晶硅层上方的栅极、设于所述栅极绝缘层上且对应于所述第二多晶硅层上方的存储电容电极、设于所述栅极、存储电容电极、及栅极绝缘层上的层间介电层、设于所述层间介电层上的源极与漏极；
其中，所述第一多晶硅层包括位于两侧的源极接触区与漏极接触区、及位于源极接触区与漏极接触区之间的沟道区；所述源极接触区与漏极接触区均为N型重掺杂区或均为P型重掺杂区；
所述层间介电层及栅极绝缘层上设有分别对应于源极接触区及漏极接触区上方的第一通孔、及第二通孔，所述源极、及漏极分别通过第一通孔、及第二通孔与第一多晶硅层的源极接触区、及漏极接触区相接触；
整个第二多晶硅层为N型重掺杂区或P型重掺杂区，所述第二多晶硅层与存储电容电极形成存储电容；
所述第一多晶硅层、及第二多晶硅层均包括位于所述缓冲层上的含氧低温多晶硅薄膜及位于所述含氧低温多晶硅薄膜上的不含氧低温多晶硅薄膜。
所述含氧低温多晶硅薄膜的厚度为所述第一多晶硅层、及第二多晶硅层的厚度的十分之一至二十分之一。
所述TFT背板还包括：设于所述源极、漏极、及层间介电层上的平坦层、设于所述平坦层上的像素电极、设于所述像素电极、及平坦层上的像素定义层、以及设于所述像素定义层上且间隔设置的数个间隔物；
所述平坦层上设有对应于所述漏极上方的第三通孔，所述像素电极通过第三通孔与所述漏极相接触；所述像素定义层上设有对应于所述像素电极上方的第四通孔。
本发明的有益效果：本发明提供的一种TFT背板的制作方法，通过在缓冲层上制作包括含氧非晶硅薄膜以及位于所述含氧非晶硅薄膜上的不含氧非晶硅薄膜的非晶硅薄膜，使得采用硼离子诱导固相晶化法对所述非晶硅薄膜进行晶化处理时，由于所述非晶硅薄膜与缓冲层的接触界面为含氧非晶硅薄膜，而含氧非晶硅薄膜在高温结晶过程中不容易产生晶核，从而使得晶核的产生仅发生在非晶硅薄膜上表面的硼离子掺杂层中，并且自上而下发生结晶，晶粒质量好，薄膜均一性好，从而达到提高结晶质量及改善均一性的效果。本发明提供的一种TFT背板，制程简单，其中的多晶硅层的结晶质量与均一性较好，提升了TFT的性能，增强其驱动效果。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的TFT背板的制作方法的流程图；
图2为本发明的TFT背板的制作方法的步骤1的示意图；
图3为本发明的TFT背板的制作方法的步骤2的示意图；
图4-5为本发明的TFT背板的制作方法的步骤3的示意图；
图6为本发明的TFT背板的制作方法的步骤4的示意图；
图7为本发明的TFT背板的制作方法的步骤5的示意图；
图8为本发明的TFT背板的制作方法的步骤6的示意图；
图9为本发明的TFT背板的制作方法的步骤7的示意图；
图10为本发明的TFT背板的制作方法的步骤8的示意图暨本发明的TFT背板的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明首先提供一种TFT背板的制作方法，包括如下步骤：
步骤1、如图2所示，提供一衬底基板10，在所述衬底基板10上沉积缓冲层20。
具体的，所述衬底基板10为玻璃基板。
具体的，所述步骤1还包括：在所述衬底基板10上沉积缓冲层20之前，对所述衬底基板10进行清洗和烘烤。
具体的，所述缓冲层20包括氮化硅(SiNx)层、及氧化硅(SiOx)层中的一种或两种的组合。具体的，所述氮化硅层、及氧化硅层的厚度分别为
步骤2、如图3所示，在所述缓冲层20上形成非晶硅薄膜310，所述非晶硅薄膜310包括位于所述缓冲层20上的含氧非晶硅薄膜311以及位于所述含氧非晶硅薄膜311上的不含氧非晶硅薄膜312。
具体的，所述含氧非晶硅薄膜311的厚度为所述非晶硅薄膜310的厚度的十分之一至二十分之一，优选为十分之一。
具体的，所述步骤2包括：
步骤21、在所述缓冲层20上方通入硅烷气体和氧气的混合气体，在所述缓冲层20上沉积得到含氧非晶硅薄膜311。
具体的，所述步骤21中，所述硅烷气体的流量一直保持不变，所述氧气的流量在步骤21开始时最大，之后逐渐减小，到步骤21结束时减少为零。
优选的，所述步骤21中，所述氧气的流量小于或等于所述硅烷气体的流量的十分之一。
步骤22、在所述缓冲层20上方通入硅烷气体，在所述缓冲层20上沉积得到不含氧非晶硅薄膜312。
具体的，所述步骤21与步骤22中，所述硅烷气体包括甲硅烷(SiH4)、及乙硅烷(Si2H6)中的一种或多种。
步骤3、如图4-5所示，对所述非晶硅薄膜310进行硼离子掺杂，在所述非晶硅薄膜310的上表面形成一硼离子掺杂层313，对所述非晶硅薄膜310进行快速热退火处理，使所述非晶硅薄膜310结晶转化为低温多晶硅薄膜330，所述低温多晶硅薄膜330包括位于所述缓冲层20上的含氧低温多晶硅薄膜331及位于所述含氧低温多晶硅薄膜331上的不含氧低温多晶硅薄膜332。
具体的，所述步骤3的晶化过程中，由于所述非晶硅薄膜310与缓冲层20的接触界面为含氧非晶硅薄膜311，所述含氧非晶硅薄膜311在高温结晶过程中不容易产生晶核，使得晶核的产生仅发生在上表面的硼离子掺杂层313中，并且自上而下发生结晶，晶粒质量好，薄膜均一性好。
具体的，所述步骤3中，所述快速热退火处理的退火温度为600℃～730℃，退火保温时间为10min-1h。
具体的，所述步骤3中，所述硼离子掺杂制程植入的离子浓度为1×1015～1×1016ions/cm2，离子能量为5～20keV。
步骤4、如图6所示，去除所述低温多晶硅薄膜330上表面的硼离子掺杂层313，对所述低温多晶硅薄膜330进行图形化处理，得到间隔设置的第一多晶硅层30与第二多晶硅层40。
具体的，所述步骤4中，去除所述低温多晶硅薄膜330上表面的硼离子掺杂层313的方法为：对所述低温多晶硅薄膜330进行干蚀刻处理。
具体的，所述步骤4还包括：对所述第一多晶硅层30进行沟道掺杂。
具体的，所述沟道掺杂的制程可以为：对整个第一多晶硅层30进行P型轻掺杂，或者对所述第一多晶硅层30的中间区域进行P型轻掺杂。
具体的，所述P型轻掺杂制程植入的离子为硼离子(B+)。
具体的，所述P型轻掺杂制程植入的离子浓度为1×1012～1×1013ions/cm2，离子能量为5～20keV。
步骤5、如图7所示，在所述第一多晶硅层30、第二多晶硅层40、及缓冲层20上形成栅极绝缘层50，采用一道掩模对所述第一多晶硅层30的两侧、及整个第二多晶硅层40进行N型或者P型重掺杂，在所述第一多晶硅层30的两侧形成源极接触区31与漏极接触区32，所述源极接触区31与漏极接触区32之间的区域形成沟道区33，所述第二多晶硅层40经过N型或者P型重掺杂后形成导体。
具体的，所述N型重掺杂制程植入的离子为磷离子(P+)，优选的，采用磷化氢(PH3)气体进行磷离子掺杂。
具体的，所述P型重掺杂制程植入的离子为硼离子，优选的，采用乙硼烷(B2H6)气体进行硼离子掺杂。
具体的，所述N型重掺杂制程植入的离子浓度为1×1015～1×1016ions/cm2，离子能量为5～50keV；所述P型重掺杂制程植入的离子浓度为1×1015～1×1016ions/cm2，离子能量为5～50keV。
步骤6、如图8所示，在所述栅极绝缘层50上形成对应于所述第一多晶硅层30上方的栅极61、及对应于所述第二多晶硅层40上方的存储电容电极62；所述存储电容电极62与第二多晶硅层40形成存储电容；
在所述栅极61、存储电容电极62、及栅极绝缘层50上沉积层间介电层70，在所述层间介电层70及栅极绝缘层50上形成分别对应于源极接触区31及漏极接触区32上方的第一通孔71、及第二通孔72。
具体的，所述栅极61、及存储电容电极62的形成方法为：在所述栅极绝缘层50上沉积栅极金属层，采用一道光刻制程对所述栅极金属层进行图形化处理，得到栅极61、及存储电容电极62。
具体的，所述栅极绝缘层50包括氮化硅层、及氧化硅层中的一种或两种的组合。具体的，所述氮化硅层、及氧化硅层的厚度分别为
具体的，所述栅极61、及存储电容电极62均包括两钼(Mo)层及位于两钼层之间的一铝(Al)层、或仅包括单层钼层或单层铝层。具体的，所述栅极61的厚度为
具体的，所述层间介电层70包括氮化硅层、及氧化硅层中的一种或两种的组合。具体的，所述层间介电层70的厚度为
具体的，所述TFT背板的制作方法还包括：在所述步骤5之后步骤6之前、在所述步骤6形成栅极61与存储电容电极62之后沉积层间介电层70之前、或者在所述步骤6沉积层间介电层70之后形成第一通孔71与第二通孔72之前，对整个基板进行快速热退火处理，使所述步骤5中在所述第一多晶硅层30的源极接触区31与漏极接触区32、及整个第二多晶硅层40中掺杂的N型或P型离子活化，提高其有效性。所述快速热退火处理的退火温度为450℃～650℃，退火保温时间为1min-1h。
步骤7、如图9所示，在所述层间介电层70上形成源极81与漏极82，所述源极81、及漏极82分别通过第一通孔71、及第二通孔72与第一多晶硅层30的源极接触区31、及漏极接触区32相接触。
具体的，所述源极81与漏极82均包括两钼层及位于两钼层之间的一铝层、或仅包括单层钼层或单层铝层。具体的，所述源极81与漏极82的厚度分别为
步骤8、如图10所示，在所述源极81、漏极82、及层间介电层70上形成平坦层90，在所述平坦层90上形成对应于所述漏极82上方的第三通孔91，在所述平坦层90上形成像素电极100，所述像素电极100通过第三通孔91与所述漏极82相接触；
在所述像素电极100、及平坦层90上形成像素定义层110，在所述像素定义层110上形成对应于所述像素电极100上方的第四通孔111；
在所述像素定义层110上形成间隔设置的数个间隔物130。
具体的，所述第四通孔111内用于形成OLED器件的有机发光层，所述间隔物130用于在封装后支撑上方的盖板。
具体的，所述间隔物130的材料为有机材料。
具体的，所述平坦层90与像素定义层110为有机材料。
具体的，所述像素电极100的材料为氧化铟锡(ITO)。
上述TFT背板的制作方法，通过在缓冲层20上制作包括含氧非晶硅薄膜311以及位于所述含氧非晶硅薄膜311上的不含氧非晶硅薄膜312的非晶硅薄膜310，使得采用硼离子诱导固相晶化法对非晶硅薄膜310进行晶化处理时，由于所述非晶硅薄膜310与缓冲层20的接触界面为含氧非晶硅薄膜311，而含氧非晶硅薄膜311在高温结晶过程中不容易产生晶核，使得晶核的产生仅发生在非晶硅薄膜310上表面的硼离子掺杂层313中，并且自上而下发生结晶，晶粒质量好，薄膜均一性好，从而达到提高结晶质量及改善均一性的效果。
请参阅图10，基于上述TFT背板的制作方法，本发明还提供一种TFT背板，包括：衬底基板10、设于所述衬底基板10上的缓冲层20、设于所述缓冲层20上且间隔设置的第一多晶硅层30与第二多晶硅层40、设于所述第一多晶硅层30、第二多晶硅层40、及缓冲层20上的栅极绝缘层50、设于所述栅极绝缘层50上且对应于所述第一多晶硅层30上方的栅极61、设于所述栅极绝缘层50上且对应于所述第二多晶硅层40上方的存储电容电极62、设于所述栅极61、存储电容电极62、及栅极绝缘层50上的层间介电层70、设于所述层间介电层70上的源极81与漏极82；
其中，所述第一多晶硅层30包括位于两侧的源极接触区31与漏极接触区32、及位于源极接触区31与漏极接触区32之间的沟道区33；所述源极接触区31与漏极接触区32均为N型重掺杂区或均为P型重掺杂区；
所述层间介电层70及栅极绝缘层50上设有分别对应于源极接触区31及漏极接触区32上方的第一通孔71、及第二通孔72，所述源极81、及漏极82分别通过第一通孔71、及第二通孔72与第一多晶硅层30的源极接触区31、及漏极接触区32相接触；
整个第二多晶硅层40为N型重掺杂区或P型重掺杂区，所述第二多晶硅层40与存储电容电极62形成存储电容；
所述第一多晶硅层30、及第二多晶硅层40均包括位于所述缓冲层20上的含氧低温多晶硅薄膜331及位于所述含氧低温多晶硅薄膜331上的不含氧低温多晶硅薄膜332。
具体的，所述TFT背板还包括：设于所述源极81、漏极82、及层间介电层70上的平坦层90、设于所述平坦层90上的像素电极100、设于所述像素电极100、及平坦层90上的像素定义层110、以及设于所述像素定义层110上且间隔设置的数个间隔物130；
所述平坦层90上设有对应于所述漏极82上方的第三通孔91，所述像素电极100通过第三通孔91与所述漏极82相接触；所述像素定义层110上设有对应于所述像素电极100上方的第四通孔111。
具体的，所述第四通孔111内用于形成OLED器件的有机发光层。
具体的，所述间隔物130的材料为有机材料。
具体的，所述平坦层90与像素定义层110为有机材料。
具体的，所述像素电极100的材料为氧化铟锡。
具体的，所述衬底基板10为玻璃基板。
具体的，所述缓冲层20包括氮化硅层、及氧化硅层中的一种或两种的组合。具体的，所述氮化硅层、及氧化硅层的厚度分别为
具体的，所述含氧低温多晶硅薄膜331的厚度为所述第一多晶硅层30、及第二多晶硅层40的厚度的十分之一至二十分之一。优选为十分之一。
具体的，所述栅极绝缘层50包括氮化硅层、及氧化硅层中的一种或两种的组合。具体的，所述氮化硅层、及氧化硅层的厚度分别为
具体的，所述栅极61、及存储电容电极62均包括两钼层及位于两钼层之间的一铝层、或仅包括单层钼层或单层铝层。具体的，所述栅极61的厚度为
具体的，所述N型重掺杂区中掺入的离子为磷离子，所述P型重掺杂区中掺入的离子为硼离子。
优选的，所述沟道区33为P型轻掺杂区，所述P型轻掺杂区中掺入的离子为硼离子。
具体的，所述N型重掺杂区中掺入的离子浓度为1×1015～1×1016ions/cm2，所述P型重掺杂区中掺入的离子浓度为1×1015～1×1016ions/cm2，所述P型轻掺杂区中掺入的离子浓度为1×1012～1×1013ions/cm2。
具体的，所述层间介电层70包括氮化硅层、及氧化硅层中的一种或两种的组合。具体的，所述层间介电层70的厚度为
具体的，所述源极81与漏极82均包括两钼层及位于两钼层之间的一铝层、或仅包括单层钼层或单层铝层。具体的，所述源极81与漏极82的厚度分别为
具体的，本发明的TFT背板中，所述栅极61、源极81、漏极82、及第一多晶硅层30构成一驱动TFT，用于驱动OLED器件的有机发光层发光。
上述TFT背板，制程简单，其中的第一多晶硅层30与第二多晶硅层40的结晶质量与均一性较好，提升了TFT的性能，增强其驱动效果。
综上所述，本发明提供一种TFT背板的制作方法及TFT背板。本发明的TFT背板的制作方法，通过在缓冲层上制作包括含氧非晶硅薄膜以及位于所述含氧非晶硅薄膜上的不含氧非晶硅薄膜的非晶硅薄膜，使得采用硼离子诱导固相晶化法对所述非晶硅薄膜进行晶化处理时，由于所述非晶硅薄膜与缓冲层的接触界面为含氧非晶硅薄膜，而含氧非晶硅薄膜在高温结晶过程中不容易产生晶核，从而使得晶核的产生仅发生在非晶硅薄膜上表面的硼离子掺杂层中，并且自上而下发生结晶，晶粒质量好，薄膜均一性好，从而达到提高结晶质量及改善均一性的效果。本发明的TFT背板，制程简单，其中的多晶硅层的结晶质量与均一性较好，提升了TFT的性能，增强其驱动效果。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种TFT背板的制作方法，其特征在于，包括如下步骤：
步骤1、提供一衬底基板(10)，在所述衬底基板(10)上沉积缓冲层(20)；
步骤2、在所述缓冲层(20)上形成非晶硅薄膜(310)，所述非晶硅薄膜(310)包括位于所述缓冲层(20)上的含氧非晶硅薄膜(311)以及位于所述含氧非晶硅薄膜(311)上的不含氧非晶硅薄膜(312)；
步骤3、对所述非晶硅薄膜(310)进行硼离子掺杂，在所述非晶硅薄膜(310)的上表面形成一硼离子掺杂层(313)，对所述非晶硅薄膜(310)进行快速热退火处理，使所述非晶硅薄膜(310)结晶转化为低温多晶硅薄膜(330)，所述低温多晶硅薄膜(330)包括位于所述缓冲层(20)上的含氧低温多晶硅薄膜(331)及位于所述含氧低温多晶硅薄膜(331)上的不含氧低温多晶硅薄膜(332)；
步骤4、去除所述低温多晶硅薄膜(330)上表面的硼离子掺杂层(313)，对所述低温多晶硅薄膜(330)进行图形化处理，得到间隔设置的第一多晶硅层(30)与第二多晶硅层(40)；
步骤5、在所述第一多晶硅层(30)、第二多晶硅层(40)、及缓冲层(20)上形成栅极绝缘层(50)，采用一道掩模对所述第一多晶硅层(30)的两侧、及整个第二多晶硅层(40)进行N型或者P型重掺杂，在所述第一多晶硅层(30)的两侧形成源极接触区(31)与漏极接触区(32)，所述源极接触区(31)与漏极接触区(32)之间的区域形成沟道区(33)，所述第二多晶硅层(40)经过N型或者P型重掺杂后形成导体；
步骤6、在所述栅极绝缘层(50)上形成对应于所述第一多晶硅层(30)上方的栅极(61)、及对应于所述第二多晶硅层(40)上方的存储电容电极(62)；所述存储电容电极(62)与第二多晶硅层(40)形成存储电容；
在所述栅极(61)、存储电容电极(62)、及栅极绝缘层(50)上沉积层间介电层(70)，在所述层间介电层(70)及栅极绝缘层(50)上形成分别对应于源极接触区(31)及漏极接触区(32)上方的第一通孔(71)、及第二通孔(72)；
步骤7、在所述层间介电层(70)上形成源极(81)与漏极(82)，所述源极(81)、及漏极(82)分别通过第一通孔(71)、及第二通孔(72)与第一多晶硅层(30)的源极接触区(31)、及漏极接触区(32)相接触。
2.如权利要求1所述的TFT背板的制作方法，其特征在于，所述含氧非晶硅薄膜(311)的厚度为所述非晶硅薄膜(310)的厚度的十分之一至二十分之一。
3.如权利要求1所述的TFT背板的制作方法，其特征在于，所述步骤2包括：
步骤21、在所述缓冲层(20)上方通入硅烷气体和氧气的混合气体，在所述缓冲层(20)上沉积得到含氧非晶硅薄膜(311)；
步骤22、在所述缓冲层(20)上方通入硅烷气体，在所述缓冲层(20)上沉积得到不含氧非晶硅薄膜(312)。
4.如权利要求3所述的TFT背板的制作方法，其特征在于，所述步骤21中，所述硅烷气体的流量一直保持不变，所述氧气的流量在步骤21开始时最大，之后逐渐减小，到步骤21结束时减少为零。
5.如权利要求3所述的TFT背板的制作方法，其特征在于，所述步骤21中，所述氧气的流量小于或等于所述硅烷气体的流量的十分之一；所述步骤21与步骤22中，所述硅烷气体包括甲硅烷、及乙硅烷中的一种或多种。
6.如权利要求1所述的TFT背板的制作方法，其特征在于，还包括：在所述步骤5之后步骤6之前、在所述步骤6形成栅极(61)与存储电容电极(62)之后沉积层间介电层(70)之前、或者在所述步骤6沉积层间介电层(70)之后形成第一通孔(71)与第二通孔(72)之前，对整个基板进行快速热退火处理，使所述步骤5中在所述第一多晶硅层(30)的源极接触区(31)与漏极接触区(32)、及整个第二多晶硅层(40)中掺杂的N型或P型离子活化。
7.如权利要求1所述的TFT背板的制作方法，其特征在于，还包括步骤8、在所述源极(81)、漏极(82)、及层间介电层(70)上形成平坦层(90)，在所述平坦层(90)上形成对应于所述漏极(82)上方的第三通孔(91)，在所述平坦层(90)上形成像素电极(100)，所述像素电极(100)通过第三通孔(91)与所述漏极(82)相接触；
在所述像素电极(100)、及平坦层(90)上形成像素定义层(110)，在所述像素定义层(110)上形成对应于所述像素电极(100)上方的第四通孔(111)；
在所述像素定义层(110)上形成间隔设置的数个间隔物(130)。
8.一种TFT背板，其特征在于，包括：衬底基板(10)、设于所述衬底基板(10)上的缓冲层(20)、设于所述缓冲层(20)上且间隔设置的第一多晶硅层(30)与第二多晶硅层(40)、设于所述第一多晶硅层(30)、第二多晶硅层(40)、及缓冲层(20)上的栅极绝缘层(50)、设于所述栅极绝缘层(50)上且对应于所述第一多晶硅层(30)上方的栅极(61)、设于所述栅极绝缘层(50)上且对应于所述第二多晶硅层(40)上方的存储电容电极(62)、设于所述栅极(61)、存储电容电极(62)、及栅极绝缘层(50)上的层间介电层(70)、设于所述层间介电层(70)上的源极(81)与漏极(82)；
其中，所述第一多晶硅层(30)包括位于两侧的源极接触区(31)与漏极接触区(32)、及位于源极接触区(31)与漏极接触区(32)之间的沟道区(33)；所述源极接触区(31)与漏极接触区(32)均为N型重掺杂区或均为P型重掺杂区；
所述层间介电层(70)及栅极绝缘层(50)上设有分别对应于源极接触区(31)及漏极接触区(32)上方的第一通孔(71)、及第二通孔(72)，所述源极(81)、及漏极(82)分别通过第一通孔(71)、及第二通孔(72)与第一多晶硅层(30)的源极接触区(31)、及漏极接触区(32)相接触；
整个第二多晶硅层(40)为N型重掺杂区或P型重掺杂区，所述第二多晶硅层(40)与存储电容电极(62)形成存储电容；
所述第一多晶硅层(30)、及第二多晶硅层(40)均包括位于所述缓冲层(20)上的含氧低温多晶硅薄膜(331)及位于所述含氧低温多晶硅薄膜(331)上的不含氧低温多晶硅薄膜(332)。
9.如权利要求8所述的TFT背板，其特征在于，所述含氧低温多晶硅薄膜(331)的厚度为所述第一多晶硅层(30)、及第二多晶硅层(40)的厚度的十分之一至二十分之一。
10.如权利要求8所述的TFT背板，其特征在于，所述TFT背板还包括：设于所述源极(81)、漏极(82)、及层间介电层(70)上的平坦层(90)、设于所述平坦层(90)上的像素电极(100)、设于所述像素电极(100)、及平坦层(90)上的像素定义层(110)、以及设于所述像素定义层(110)上且间隔设置的数个间隔物(130)；
所述平坦层(90)上设有对应于所述漏极(82)上方的第三通孔(91)，所述像素电极(100)通过第三通孔(91)与所述漏极(82)相接触；所述像素定义层(110)上设有对应于所述像素电极(100)上方的第四通孔(111)。
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