CN110517986B - 一种tft背板的制作方法 - Google Patents

一种tft背板的制作方法 Download PDF

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CN110517986B
CN110517986B CN201910876895.8A CN201910876895A CN110517986B CN 110517986 B CN110517986 B CN 110517986B CN 201910876895 A CN201910876895 A CN 201910876895A CN 110517986 B CN110517986 B CN 110517986B
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魏雪
王忠雷
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Hefei Lingsheng Electronics Co ltd
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Abstract

本发明公开了一种TFT背板的制作方法，包括准备一衬底基板10，在所述衬底基板10上形成第一缓冲层21，在所述第一缓冲层21上形成第二缓冲层22，在所述第二缓冲层22上形成若干个栅极30和像素电极40，所述栅极30和像素电极40间隔设置；本发明的TFT背板的制作方法通过利用像素电极在衬底基板同一个像素区域内分别形成强度不相等的电场，有效地改善了大尺寸液晶显示器在大视角下的颜色失真，提高了产品的竞争力。

Description

一种TFT背板的制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT背板的制作方法。
背景技术
在显示技术领域，液晶显示器(Liquid Crystal Display，LCD)与有源矩阵驱动式有机电致发光显示器(Active Matrix Organic Light-Emitting Diode，简称AMOLED)等平板显示器已经逐步取代阴极射线管(Cathode Ray Tube)显示器，广泛的应用于液晶电视、手机、个人数字助理、数字相机、计算机屏幕或笔记本电脑屏幕等。显示面板是LCD、OLED显示器的重要组成部分。不论是LCD显示面板，还是OLED显示面板，通常都具有一薄膜晶体管(Thin Film Transistor，TFT)基板。以LCD显示面板为例，其主要是由TFT基板、彩色滤光片(Color Filter，CF)基板、以及配置于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是通过在TFT基板与CF基板上施加驱动电压来控制液晶层中液晶分子的旋转，将背光模组的光线折射出来产生画面。因此，薄膜晶体管是目前LCD和OLED显示器中的主要驱动元件，直接关系到高性能平板显示装置的发展方向。
目前，常规的液晶显示器的像素电极一般可以划分为四个像素区域(domain)。每个像素区域各自形成一个显示畴，位于不同显示畴内的液晶分子指向不同，利用液晶分子之间的相互补偿来增大液晶显示器的视野角。但由于液晶分子的双折射率在各个方向上存在着比较大的差异，因此当液晶分子的指向不同时，从不同视角观察显示屏会出现不同程度的颜色失真。
发明内容
本发明的目的在于提供一种TFT背板的制作方法，本方法制作的TFT背板能够有效的改善现有技术中液晶显示屏从不同视角观察显示屏会出现不同程度的颜色失真的问题。
本发明技术方案一种TFT背板的制作方法，其特征在于，包括
准备一衬底基板，
在所述衬底基板上形成第一缓冲层，在所述第一缓冲层上形成第二缓冲层，
在所述第二缓冲层上形成若干个栅极和像素电极，所述栅极和像素电极间隔设置，
在所述第二缓冲层未覆盖区表面和所述栅极和像素电极表面形成第一绝缘层，所述第一绝缘层上均布设置有若干个弧形凹陷，在所述第一绝缘层上形成第二绝缘层，
在所述第二绝缘层上形成间隔设置的存储电容和第一非晶体硅薄膜，
在所述第一非晶体硅薄膜上形成半导体层，
在所述半导体层中间部位形成第二非晶体硅薄膜，
在所述半导体层未被第二非晶体硅薄膜覆盖的表面形成两第一导电层和第二导电层，
在所述第一导电层和第二导电层上分别形成漏极和源极，
所述源极上形成第三非晶体硅薄膜，
在所述第三非晶体硅薄膜上表面、第二绝缘层未覆盖的上表面和存储电容上表面上形成第三绝缘层，在所述第三绝缘层上表面上形成第四绝缘层，
在所述第二导电层上连接第三导电层和第四导电层，所述第三导电层和第四导电层分别与存储电容和像素电极联通，
在所述第一导电层和第二导电层上还分别连接有第一介电层和第二介电层，所述第一介电层和第二介电层均与栅极联通。
优选地，所述第一缓冲层为含氧非晶硅薄膜，第二缓冲层为不含氧非晶硅薄膜。
优选地，所述存储电容包括多晶硅层和设置在多晶硅层上部的存储电容电极。
优选地，所述第一介电层和第二介电层均依次穿过第一绝缘层、第二绝缘层、第一非晶体硅薄膜和半导体层。
优选地，所述第三导电层穿过第三绝缘层与存储电容联通，所述第四导电层穿过第一绝缘层、第二绝缘层和第三绝缘层与像素电极联通。
本发明技术方案的有益效果是：
本发明技术方案的一种TFT背板的制作方法通过利用像素电极在衬底基板同一个像素区域内分别形成强度不相等的电场，有效地改善了大尺寸液晶显示器在大视角下的颜色失真，提高了产品的竞争力。
附图说明
图1为本发明技术方案的TFT背板的结构示意图。
具体实施方式
为便于本领域技术人员理解本发明技术方案，现结合说明书附图对本发明技术方案做进一步的说明。
一种TFT背板的制作方法，包括以下步骤：
第一步，准备一衬底基板10。然后在衬底基板10上形成第一缓冲层21，在第一缓冲层21上形成第二缓冲层22。
第二步，在第二缓冲层22上形成若干个栅极30和像素电极40，栅极30和像素电极40间隔设置。
第三步，在第二缓冲层22未覆盖区表面和栅极30和像素电极40表面形成第一绝缘层51，第一绝缘层51上均布设置有若干个弧形凹陷52，在第一绝缘层51上形成第二绝缘层53。
第四步，在第二绝缘层53上形成间隔设置的存储电容60和第一非晶体硅薄膜71。在第一非晶体硅薄膜71上形成半导体层80。在半导体层80中间部位形成第二非晶体硅薄膜72。在半导体层80未被第二非晶体硅薄膜72覆盖的表面形成两第一导电层91和第二导电层92。
第五步，在第一导电层91和第二导电层92上分别形成漏极110和源极120。
第六步，源极120上形成第三非晶体硅薄膜73。在第三非晶体硅薄膜73上表面、第二绝缘层53未覆盖的上表面和存储电容60上表面上形成第三绝缘层54，在第三绝缘层54上表面上形成第四绝缘层55。
第七步，在第二导电层92上连接第三导电层93和第四导电层94，第三导电层93和第四导电层94分别与存储电容60和像素电极40联通。在第一导电层91和第二导电层92上还分别连接有第一介电层131和第二介电层132，第一介电层131和第二介电层132均与栅极30联通。
第一缓冲层21为含氧非晶硅薄膜，第二缓冲层22为不含氧非晶硅薄膜。
存储电容60包括多晶硅层和设置在多晶硅层上部的存储电容电极。
第一介电层131和第二介电层132均依次穿过第一绝缘层51、第二绝缘层53、第一非晶体硅薄膜71和半导体层80。
第三导电层93穿过第三绝缘层54与存储电容60联通，第四导电层94穿过第一绝缘层51、第二绝缘层53和第三绝缘层54与像素电极40联通。
本发明技术方案在上面结合附图对发明进行了示例性描述，显然本发明具体实现并不受上述方式的限制，只要采用了本发明的方法构思和技术方案进行的各种非实质性改进，或未经改进将发明的构思和技术方案直接应用于其它场合的，均在本发明的保护范围之内。

Claims (5)

1.一种TFT背板的制作方法，其特征在于，包括
准备一衬底基板(10)，
在所述衬底基板(10)上形成第一缓冲层(21)，在所述第一缓冲层(21)上形成第二缓冲层(22)，
在所述第二缓冲层(22)上形成若干个栅极(30)和像素电极(40)，所述栅极(30)和像素电极(40)间隔设置，
在所述第二缓冲层(22)未覆盖区表面和所述栅极(30)和像素电极(40)表面形成第一绝缘层(51)，所述第一绝缘层(51)上均布设置有若干个弧形凹陷(52)，在所述第一绝缘层(51)上形成第二绝缘层(53)，
在所述第二绝缘层(53)上形成间隔设置的存储电容(60)和第一非晶体硅薄膜(71)，
在所述第一非晶体硅薄膜(71)上形成半导体层(80)，
在所述半导体层(80)中间部位形成第二非晶体硅薄膜(72)，
在所述半导体层(80)未被第二非晶体硅薄膜(72)覆盖的表面形成两第一导电层(91)和第二导电层(92)，
在所述第一导电层(91)和第二导电层(92)上分别形成漏极(110)和源极(120)，
所述源极(120)上形成第三非晶体硅薄膜(73)，
在所述第三非晶体硅薄膜(73)上表面、第二绝缘层(53)未覆盖的上表面和存储电容(60)上表面上形成第三绝缘层(54)，在所述第三绝缘层(54)上表面上形成第四绝缘层(55)，
在所述第二导电层(92)上连接第三导电层(93)和第四导电层(94)，所述第三导电层(93)和第四导电层(94)分别与存储电容(60)和像素电极(40)联通，
在所述第一导电层(91)和第二导电层(92)上还分别连接有第一介电层(131)和第二介电层(132)，所述第一介电层(131)和第二介电层(132)均与栅极(30)联通。
2.根据权利要求1所述的一种TFT背板的制作方法，其特征在于，所述第一缓冲层(21)为含氧非晶硅薄膜，第二缓冲层(22)为不含氧非晶硅薄膜。
3.根据权利要求1所述的一种TFT背板的制作方法，其特征在于，所述存储电容(60)包括多晶硅层和设置在多晶硅层上部的存储电容电极。
4.根据权利要求1所述的一种TFT背板的制作方法，其特征在于，所述第一介电层(131)和第二介电层(132)均依次穿过第一绝缘层(51)、第二绝缘层(53)、第一非晶体硅薄膜(71)和半导体层(80)。
5.根据权利要求1所述的一种TFT背板的制作方法，其特征在于，所述第三导电层(93)穿过第三绝缘层(54)与存储电容(60)联通，所述第四导电层(94)穿过第一绝缘层(51)、第二绝缘层(53)和第三绝缘层(54)与像素电极(40)联通。
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