KR101803254B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101803254B1
KR101803254B1 KR1020127016453A KR20127016453A KR101803254B1 KR 101803254 B1 KR101803254 B1 KR 101803254B1 KR 1020127016453 A KR1020127016453 A KR 1020127016453A KR 20127016453 A KR20127016453 A KR 20127016453A KR 101803254 B1 KR101803254 B1 KR 101803254B1
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South Korea
Prior art keywords
transistor
memory cell
potential
electrically connected
oxide semiconductor
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Expired - Fee Related
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KR1020127016453A
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English (en)
Korean (ko)
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KR20120094067A (ko
Inventor
순페이 야마자키
준 고야마
기요시 가토
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Physical Vapour Deposition (AREA)
KR1020127016453A 2009-11-27 2010-11-10 반도체 장치 Expired - Fee Related KR101803254B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2009-270667 2009-11-27
JP2009270667 2009-11-27
PCT/JP2010/070419 WO2011065258A1 (en) 2009-11-27 2010-11-10 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177033899A Division KR101911382B1 (ko) 2009-11-27 2010-11-10 반도체 장치

Publications (2)

Publication Number Publication Date
KR20120094067A KR20120094067A (ko) 2012-08-23
KR101803254B1 true KR101803254B1 (ko) 2017-11-30

Family

ID=44066363

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020127016453A Expired - Fee Related KR101803254B1 (ko) 2009-11-27 2010-11-10 반도체 장치
KR1020177033899A Active KR101911382B1 (ko) 2009-11-27 2010-11-10 반도체 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020177033899A Active KR101911382B1 (ko) 2009-11-27 2010-11-10 반도체 장치

Country Status (5)

Country Link
US (1) US8559220B2 (enExample)
JP (13) JP5647873B2 (enExample)
KR (2) KR101803254B1 (enExample)
TW (3) TWI556236B (enExample)
WO (1) WO2011065258A1 (enExample)

Families Citing this family (269)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8059109B2 (en) * 2005-05-20 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic apparatus
US10366970B2 (en) 2009-10-12 2019-07-30 Monolithic 3D Inc. 3D semiconductor device and structure
US10910364B2 (en) 2009-10-12 2021-02-02 Monolitaic 3D Inc. 3D semiconductor device
US11018133B2 (en) 2009-10-12 2021-05-25 Monolithic 3D Inc. 3D integrated circuit
US11374118B2 (en) 2009-10-12 2022-06-28 Monolithic 3D Inc. Method to form a 3D integrated circuit
US12027518B1 (en) 2009-10-12 2024-07-02 Monolithic 3D Inc. 3D semiconductor devices and structures with metal layers
US11984445B2 (en) 2009-10-12 2024-05-14 Monolithic 3D Inc. 3D semiconductor devices and structures with metal layers
US10388863B2 (en) 2009-10-12 2019-08-20 Monolithic 3D Inc. 3D memory device and structure
SG179111A1 (en) * 2009-10-29 2012-05-30 Semiconductor Energy Lab Semiconductor device
KR101893332B1 (ko) * 2009-11-13 2018-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101803254B1 (ko) * 2009-11-27 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2513966B1 (en) * 2009-12-18 2020-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101434948B1 (ko) 2009-12-25 2014-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN104022115B (zh) 2009-12-25 2017-04-12 株式会社半导体能源研究所 半导体装置
CN105702631B (zh) 2009-12-28 2019-05-28 株式会社半导体能源研究所 半导体器件
KR101762316B1 (ko) 2009-12-28 2017-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
CN102742001B (zh) 2010-02-05 2017-03-22 株式会社半导体能源研究所 半导体装置
WO2011096277A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
WO2011096264A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
CN102725842B (zh) 2010-02-05 2014-12-03 株式会社半导体能源研究所 半导体器件
KR101817054B1 (ko) * 2010-02-12 2018-01-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 포함한 표시 장치
KR101867272B1 (ko) 2010-03-05 2018-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그의 제작 방법
US8664658B2 (en) 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5923248B2 (ja) 2010-05-20 2016-05-24 株式会社半導体エネルギー研究所 半導体装置
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103003934B (zh) 2010-07-16 2015-07-01 株式会社半导体能源研究所 半导体器件
WO2012014790A1 (en) 2010-07-27 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10217667B2 (en) * 2011-06-28 2019-02-26 Monolithic 3D Inc. 3D semiconductor device, fabrication method and system
US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
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US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
TWI545587B (zh) 2010-08-06 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及驅動半導體裝置的方法
JP5727892B2 (ja) 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
US8339837B2 (en) 2010-08-26 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
WO2012029637A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8520426B2 (en) 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
JP2012079399A (ja) * 2010-09-10 2012-04-19 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
TWI608486B (zh) 2010-09-13 2017-12-11 半導體能源研究所股份有限公司 半導體裝置
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US11094576B1 (en) 2010-11-18 2021-08-17 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11804396B2 (en) 2010-11-18 2023-10-31 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11211279B2 (en) 2010-11-18 2021-12-28 Monolithic 3D Inc. Method for processing a 3D integrated circuit and structure
US11107721B2 (en) 2010-11-18 2021-08-31 Monolithic 3D Inc. 3D semiconductor device and structure with NAND logic
US12154817B1 (en) 2010-11-18 2024-11-26 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11735462B2 (en) 2010-11-18 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with single-crystal layers
US11018042B1 (en) 2010-11-18 2021-05-25 Monolithic 3D Inc. 3D semiconductor memory device and structure
US12463076B2 (en) 2010-12-16 2025-11-04 Monolithic 3D Inc. 3D semiconductor device and structure
US8686415B2 (en) 2010-12-17 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5973165B2 (ja) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI619230B (zh) 2011-01-14 2018-03-21 半導體能源研究所股份有限公司 半導體記憶裝置
TWI525619B (zh) * 2011-01-27 2016-03-11 半導體能源研究所股份有限公司 記憶體電路
TWI520273B (zh) 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 半導體儲存裝置
US8787083B2 (en) * 2011-02-10 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
US8659957B2 (en) * 2011-03-07 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
JP5839474B2 (ja) 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 信号処理回路
US8848464B2 (en) 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
JP6013682B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
WO2012169142A1 (en) 2011-06-09 2012-12-13 Semiconductor Energy Laboratory Co., Ltd. Cache memory and method for driving the same
JP6012263B2 (ja) 2011-06-09 2016-10-25 株式会社半導体エネルギー研究所 半導体記憶装置
US8958263B2 (en) * 2011-06-10 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6104522B2 (ja) * 2011-06-10 2017-03-29 株式会社半導体エネルギー研究所 半導体装置
US9166055B2 (en) * 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8952377B2 (en) * 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9076505B2 (en) 2011-12-09 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Memory device
US8969867B2 (en) * 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11616004B1 (en) 2012-04-09 2023-03-28 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11476181B1 (en) 2012-04-09 2022-10-18 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11881443B2 (en) 2012-04-09 2024-01-23 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11410912B2 (en) 2012-04-09 2022-08-09 Monolithic 3D Inc. 3D semiconductor device with vias and isolation layers
US11694944B1 (en) 2012-04-09 2023-07-04 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11594473B2 (en) 2012-04-09 2023-02-28 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11088050B2 (en) 2012-04-09 2021-08-10 Monolithic 3D Inc. 3D semiconductor device with isolation layers
US11735501B1 (en) 2012-04-09 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11164811B2 (en) 2012-04-09 2021-11-02 Monolithic 3D Inc. 3D semiconductor device with isolation layers and oxide-to-oxide bonding
US10600888B2 (en) 2012-04-09 2020-03-24 Monolithic 3D Inc. 3D semiconductor device
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
WO2013153853A1 (ja) * 2012-04-12 2013-10-17 シャープ株式会社 半導体記憶装置
US9048323B2 (en) * 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6005391B2 (ja) * 2012-05-01 2016-10-12 株式会社半導体エネルギー研究所 半導体装置
US8929128B2 (en) 2012-05-17 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and writing method of the same
JP6250955B2 (ja) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JPWO2013179593A1 (ja) * 2012-05-29 2016-01-18 株式会社ソシオネクスト 半導体記憶装置および半導体記憶装置を搭載した半導体装置
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
JP5960000B2 (ja) * 2012-09-05 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
KR102841348B1 (ko) * 2012-11-30 2025-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US11018116B2 (en) 2012-12-22 2021-05-25 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US12051674B2 (en) 2012-12-22 2024-07-30 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11967583B2 (en) 2012-12-22 2024-04-23 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11309292B2 (en) 2012-12-22 2022-04-19 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11784169B2 (en) 2012-12-22 2023-10-10 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11217565B2 (en) 2012-12-22 2022-01-04 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US11961827B1 (en) 2012-12-22 2024-04-16 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11063024B1 (en) 2012-12-22 2021-07-13 Monlithic 3D Inc. Method to form a 3D semiconductor device and structure
US11916045B2 (en) 2012-12-22 2024-02-27 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
JP2014142986A (ja) 2012-12-26 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置
US10600657B2 (en) 2012-12-29 2020-03-24 Monolithic 3D Inc 3D semiconductor device and structure
US11430668B2 (en) 2012-12-29 2022-08-30 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US10651054B2 (en) 2012-12-29 2020-05-12 Monolithic 3D Inc. 3D semiconductor device and structure
US11430667B2 (en) 2012-12-29 2022-08-30 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11177140B2 (en) 2012-12-29 2021-11-16 Monolithic 3D Inc. 3D semiconductor device and structure
US10903089B1 (en) 2012-12-29 2021-01-26 Monolithic 3D Inc. 3D semiconductor device and structure
US11087995B1 (en) 2012-12-29 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US11004694B1 (en) 2012-12-29 2021-05-11 Monolithic 3D Inc. 3D semiconductor device and structure
US10892169B2 (en) 2012-12-29 2021-01-12 Monolithic 3D Inc. 3D semiconductor device and structure
US12249538B2 (en) 2012-12-29 2025-03-11 Monolithic 3D Inc. 3D semiconductor device and structure including power distribution grids
JP2014195243A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
US11869965B2 (en) 2013-03-11 2024-01-09 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US12094965B2 (en) 2013-03-11 2024-09-17 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US11935949B1 (en) 2013-03-11 2024-03-19 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US8902663B1 (en) 2013-03-11 2014-12-02 Monolithic 3D Inc. Method of maintaining a memory state
US10325651B2 (en) 2013-03-11 2019-06-18 Monolithic 3D Inc. 3D semiconductor device with stacked memory
US11088130B2 (en) 2014-01-28 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US11398569B2 (en) 2013-03-12 2022-07-26 Monolithic 3D Inc. 3D semiconductor device and structure
US11923374B2 (en) 2013-03-12 2024-03-05 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US10840239B2 (en) 2014-08-26 2020-11-17 Monolithic 3D Inc. 3D semiconductor device and structure
US12100646B2 (en) 2013-03-12 2024-09-24 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US9612795B2 (en) 2013-03-14 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Data processing device, data processing method, and computer program
US10224279B2 (en) 2013-03-15 2019-03-05 Monolithic 3D Inc. Semiconductor device and structure
US9786350B2 (en) * 2013-03-18 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Memory device
US11720736B2 (en) 2013-04-15 2023-08-08 Monolithic 3D Inc. Automation methods for 3D integrated circuits and devices
US9021414B1 (en) 2013-04-15 2015-04-28 Monolithic 3D Inc. Automation for monolithic 3D devices
US11574109B1 (en) 2013-04-15 2023-02-07 Monolithic 3D Inc Automation methods for 3D integrated circuits and devices
US11341309B1 (en) 2013-04-15 2022-05-24 Monolithic 3D Inc. Automation for monolithic 3D devices
US11270055B1 (en) 2013-04-15 2022-03-08 Monolithic 3D Inc. Automation for monolithic 3D devices
US11030371B2 (en) 2013-04-15 2021-06-08 Monolithic 3D Inc. Automation for monolithic 3D devices
US11487928B2 (en) 2013-04-15 2022-11-01 Monolithic 3D Inc. Automation for monolithic 3D devices
JP6570817B2 (ja) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 半導体装置
JP2015084418A (ja) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
WO2015053009A1 (ja) * 2013-10-11 2015-04-16 シャープ株式会社 半導体装置
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US11031394B1 (en) 2014-01-28 2021-06-08 Monolithic 3D Inc. 3D semiconductor device and structure
US11107808B1 (en) 2014-01-28 2021-08-31 Monolithic 3D Inc. 3D semiconductor device and structure
US10297586B2 (en) 2015-03-09 2019-05-21 Monolithic 3D Inc. Methods for processing a 3D semiconductor device
US12094829B2 (en) 2014-01-28 2024-09-17 Monolithic 3D Inc. 3D semiconductor device and structure
KR102267237B1 (ko) * 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
JP6538426B2 (ja) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置及び電子機器
KR102344782B1 (ko) * 2014-06-13 2021-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 입력 장치 및 입출력 장치
KR20160034200A (ko) * 2014-09-19 2016-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9281305B1 (en) * 2014-12-05 2016-03-08 National Applied Research Laboratories Transistor device structure
JP6667267B2 (ja) * 2014-12-08 2020-03-18 株式会社半導体エネルギー研究所 半導体装置
JP6689062B2 (ja) 2014-12-10 2020-04-28 株式会社半導体エネルギー研究所 半導体装置
WO2016092416A1 (en) 2014-12-11 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
US11056468B1 (en) 2015-04-19 2021-07-06 Monolithic 3D Inc. 3D semiconductor device and structure
US10381328B2 (en) 2015-04-19 2019-08-13 Monolithic 3D Inc. Semiconductor device and structure
US11011507B1 (en) 2015-04-19 2021-05-18 Monolithic 3D Inc. 3D semiconductor device and structure
US10825779B2 (en) 2015-04-19 2020-11-03 Monolithic 3D Inc. 3D semiconductor device and structure
JP6901831B2 (ja) 2015-05-26 2021-07-14 株式会社半導体エネルギー研究所 メモリシステム、及び情報処理システム
US11956952B2 (en) 2015-08-23 2024-04-09 Monolithic 3D Inc. Semiconductor memory device and structure
US12100658B2 (en) 2015-09-21 2024-09-24 Monolithic 3D Inc. Method to produce a 3D multilayer semiconductor device and structure
WO2017053329A1 (en) 2015-09-21 2017-03-30 Monolithic 3D Inc 3d semiconductor device and structure
US11114427B2 (en) 2015-11-07 2021-09-07 Monolithic 3D Inc. 3D semiconductor processor and memory device and structure
US12178055B2 (en) 2015-09-21 2024-12-24 Monolithic 3D Inc. 3D semiconductor memory devices and structures
US11937422B2 (en) 2015-11-07 2024-03-19 Monolithic 3D Inc. Semiconductor memory device and structure
US12477752B2 (en) 2015-09-21 2025-11-18 Monolithic 3D Inc. 3D semiconductor memory devices and structures
US12250830B2 (en) 2015-09-21 2025-03-11 Monolithic 3D Inc. 3D semiconductor memory devices and structures
US11978731B2 (en) 2015-09-21 2024-05-07 Monolithic 3D Inc. Method to produce a multi-level semiconductor memory device and structure
US10522225B1 (en) 2015-10-02 2019-12-31 Monolithic 3D Inc. Semiconductor device with non-volatile memory
WO2017068478A1 (en) * 2015-10-22 2017-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or memory device including the semiconductor device
US12035531B2 (en) 2015-10-24 2024-07-09 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US11991884B1 (en) 2015-10-24 2024-05-21 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US10847540B2 (en) 2015-10-24 2020-11-24 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11114464B2 (en) 2015-10-24 2021-09-07 Monolithic 3D Inc. 3D semiconductor device and structure
US12120880B1 (en) 2015-10-24 2024-10-15 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US10418369B2 (en) 2015-10-24 2019-09-17 Monolithic 3D Inc. Multi-level semiconductor memory device and structure
US12219769B2 (en) 2015-10-24 2025-02-04 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US11296115B1 (en) 2015-10-24 2022-04-05 Monolithic 3D Inc. 3D semiconductor device and structure
US12016181B2 (en) 2015-10-24 2024-06-18 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
TWI766588B (zh) 2015-10-30 2022-06-01 日商半導體能源研究所股份有限公司 電容器、半導體裝置、模組以及電子裝置的製造方法
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
JP6807725B2 (ja) * 2015-12-22 2021-01-06 株式会社半導体エネルギー研究所 半導体装置、表示パネル、及び電子機器
JP6822853B2 (ja) * 2016-01-21 2021-01-27 株式会社半導体エネルギー研究所 記憶装置及び記憶装置の駆動方法
JP6995481B2 (ja) 2016-01-29 2022-02-04 株式会社半導体エネルギー研究所 ソースドライバ
JP6115882B1 (ja) * 2016-03-04 2017-04-19 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
US10008502B2 (en) 2016-05-04 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
TWI686929B (zh) 2016-05-20 2020-03-01 聯華電子股份有限公司 半導體元件
US10490116B2 (en) 2016-07-06 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and display system
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
JP2018046059A (ja) 2016-09-12 2018-03-22 東芝メモリ株式会社 半導体装置
US11930648B1 (en) 2016-10-10 2024-03-12 Monolithic 3D Inc. 3D memory devices and structures with metal layers
US12225704B2 (en) 2016-10-10 2025-02-11 Monolithic 3D Inc. 3D memory devices and structures with memory arrays and metal layers
US11711928B2 (en) 2016-10-10 2023-07-25 Monolithic 3D Inc. 3D memory devices and structures with control circuits
US11251149B2 (en) 2016-10-10 2022-02-15 Monolithic 3D Inc. 3D memory device and structure
US11329059B1 (en) 2016-10-10 2022-05-10 Monolithic 3D Inc. 3D memory devices and structures with thinned single crystal substrates
US11812620B2 (en) 2016-10-10 2023-11-07 Monolithic 3D Inc. 3D DRAM memory devices and structures with control circuits
US11869591B2 (en) 2016-10-10 2024-01-09 Monolithic 3D Inc. 3D memory devices and structures with control circuits
JP6963463B2 (ja) * 2016-11-10 2021-11-10 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器
US10692869B2 (en) 2016-11-17 2020-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR20200009023A (ko) 2017-05-19 2020-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 또는 기억 장치
US11798613B2 (en) 2018-12-10 2023-10-24 Etron Technology, Inc. Dynamic memory with long retention time
US12354646B2 (en) 2018-12-10 2025-07-08 Etron Technology, Inc. Dynamic memory with sustainable storage architecture
US11302383B2 (en) * 2018-12-10 2022-04-12 Etron Technology, Inc. Dynamic memory with sustainable storage architecture
US12068020B2 (en) * 2018-12-10 2024-08-20 Etron Technology, Inc. Dynamic memory with sustainable storage architecture and clean up circuit
US12361998B2 (en) * 2018-12-10 2025-07-15 Invention And Collaboration Laboratory Pte. Ltd. Sustainable DRAM having principle power supply voltage unified with logic circuit
US10985162B2 (en) 2018-12-14 2021-04-20 John Bennett System for accurate multiple level gain cells
US11296106B2 (en) 2019-04-08 2022-04-05 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US10892016B1 (en) 2019-04-08 2021-01-12 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11018156B2 (en) 2019-04-08 2021-05-25 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11763864B2 (en) 2019-04-08 2023-09-19 Monolithic 3D Inc. 3D memory semiconductor devices and structures with bit-line pillars
US11158652B1 (en) 2019-04-08 2021-10-26 Monolithic 3D Inc. 3D memory semiconductor devices and structures
JP7583722B2 (ja) 2019-08-09 2024-11-14 株式会社半導体エネルギー研究所 記憶装置
CN115885389A (zh) 2020-08-27 2023-03-31 株式会社半导体能源研究所 半导体装置、显示装置以及电子设备

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001073846A1 (en) * 2000-03-29 2001-10-04 Hitachi, Ltd. Semiconductor device
JP2002368226A (ja) * 2001-06-11 2002-12-20 Sharp Corp 半導体装置、半導体記憶装置及びその製造方法、並びに携帯情報機器
JP2007103918A (ja) * 2005-09-06 2007-04-19 Canon Inc アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタ、アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタの製造方法及びアモルファス酸化物膜の製造方法
JP2008536251A (ja) * 2005-04-05 2008-09-04 サンディスク コーポレイション 不揮発性メモリの読み出し動作中の結合の補償
WO2008117739A1 (ja) * 2007-03-23 2008-10-02 Idemitsu Kosan Co., Ltd. 半導体デバイス、多結晶半導体薄膜、多結晶半導体薄膜の製造方法、電界効果型トランジスタ、及び、電界効果型トランジスタの製造方法
JP2009206508A (ja) * 2008-01-31 2009-09-10 Canon Inc 薄膜トランジスタ及び表示装置
JP2009277702A (ja) * 2008-05-12 2009-11-26 Canon Inc 半導体素子の閾値電圧の制御方法

Family Cites Families (147)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0053878B1 (en) 1980-12-08 1985-08-14 Kabushiki Kaisha Toshiba Semiconductor memory device
JPS62274773A (ja) * 1986-05-23 1987-11-28 Hitachi Ltd 半導体記憶装置
JPS6354763A (ja) * 1986-08-25 1988-03-09 Mitsubishi Electric Corp 半導体装置
JPS63268184A (ja) * 1987-04-24 1988-11-04 Sony Corp 半導体メモリ装置
JPH07109874B2 (ja) * 1988-07-08 1995-11-22 株式会社東芝 半導体装置及びその製造方法
JPH0254572A (ja) * 1988-08-18 1990-02-23 Matsushita Electric Ind Co Ltd 半導体記憶装置
JPH0770624B2 (ja) * 1990-06-22 1995-07-31 株式会社東芝 半導体集積回路
JP3124303B2 (ja) * 1991-02-16 2001-01-15 セイコーインスツルメンツ株式会社 半導体装置とその製造方法
US5347154A (en) * 1990-11-15 1994-09-13 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
JP2775040B2 (ja) 1991-10-29 1998-07-09 株式会社 半導体エネルギー研究所 電気光学表示装置およびその駆動方法
JPH05167073A (ja) * 1991-12-17 1993-07-02 Hitachi Ltd 半導体集積回路装置及びその製造方法
JPH0799251A (ja) * 1992-12-10 1995-04-11 Sony Corp 半導体メモリセル
DE69635107D1 (de) 1995-08-03 2005-09-29 Koninkl Philips Electronics Nv Halbleiteranordnung mit einem transparenten schaltungselement
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
KR100219519B1 (ko) * 1997-01-10 1999-09-01 윤종용 페로일렉트릭 플로팅 게이트 램을 구비하는 반도체 메모리 디바이스 및 그 제조방법
JPH1140772A (ja) * 1997-07-22 1999-02-12 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP3955409B2 (ja) * 1999-03-17 2007-08-08 株式会社ルネサステクノロジ 半導体記憶装置
TW461096B (en) * 1999-05-13 2001-10-21 Hitachi Ltd Semiconductor memory
JP3936830B2 (ja) * 1999-05-13 2007-06-27 株式会社日立製作所 半導体装置
JP2001053164A (ja) 1999-08-04 2001-02-23 Sony Corp 半導体記憶装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
WO2001027928A1 (en) * 1999-10-12 2001-04-19 Robert Patti Memory that stores multiple bits per storage cell
JP2001351386A (ja) * 2000-06-07 2001-12-21 Sony Corp 半導体記憶装置およびその動作方法
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
JP3749101B2 (ja) * 2000-09-14 2006-02-22 株式会社ルネサステクノロジ 半導体装置
JP4005304B2 (ja) * 2000-11-02 2007-11-07 Ｔｄｋ株式会社 画像表示装置
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
US20040129933A1 (en) * 2001-02-16 2004-07-08 Arokia Nathan Pixel current driver for organic light emitting diode displays
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP2003110110A (ja) * 2001-09-28 2003-04-11 Ricoh Co Ltd 半導体装置及びその製造方法
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
EP2413366B1 (en) 2004-03-12 2017-01-11 Japan Science And Technology Agency A switching element of LCDs or organic EL displays
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP4872196B2 (ja) 2004-08-25 2012-02-08 カシオ計算機株式会社 薄膜トランジスタパネル及びその製造方法
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
CN101057339B (zh) 2004-11-10 2012-12-26 佳能株式会社 无定形氧化物和场效应晶体管
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
JP5053537B2 (ja) 2004-11-10 2012-10-17 キヤノン株式会社 非晶質酸化物を利用した半導体デバイス
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7868326B2 (en) 2004-11-10 2011-01-11 Canon Kabushiki Kaisha Field effect transistor
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
CA2585063C (en) 2004-11-10 2013-01-15 Canon Kabushiki Kaisha Light-emitting device
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI445178B (zh) 2005-01-28 2014-07-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI562380B (en) 2005-01-28 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
WO2006108425A1 (en) * 2005-04-14 2006-10-19 Tallinn University Of Technology Method of preparing zinc oxide nanorods on a substrate by chemical spray pyrolysis
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR101117948B1 (ko) 2005-11-15 2012-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 디스플레이 장치 제조 방법
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
JP5015473B2 (ja) * 2006-02-15 2012-08-29 財団法人高知県産業振興センター 薄膜トランジスタアレイ及びその製法
JP4839904B2 (ja) * 2006-03-16 2011-12-21 セイコーエプソン株式会社 半導体装置、集積回路、及び電子機器
JP2007250982A (ja) * 2006-03-17 2007-09-27 Canon Inc 酸化物半導体を用いた薄膜トランジスタ及び表示装置
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
WO2007142167A1 (en) 2006-06-02 2007-12-13 Kochi Industrial Promotion Center Semiconductor device including an oxide semiconductor thin film layer of zinc oxide and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
US7906415B2 (en) * 2006-07-28 2011-03-15 Xerox Corporation Device having zinc oxide semiconductor and indium/zinc electrode
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP2008053288A (ja) * 2006-08-22 2008-03-06 Sony Corp 半導体集積回路及びその製造方法
US7663165B2 (en) * 2006-08-31 2010-02-16 Aptina Imaging Corporation Transparent-channel thin-film transistor-based pixels for high-performance image sensors
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7511343B2 (en) * 2006-10-12 2009-03-31 Xerox Corporation Thin film transistor
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
JP4910779B2 (ja) * 2007-03-02 2012-04-04 凸版印刷株式会社 有機ｅｌディスプレイおよびその製造方法
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
JP2009016368A (ja) * 2007-06-29 2009-01-22 Ricoh Co Ltd メモリーデバイス
KR20090002841A (ko) * 2007-07-04 2009-01-09 삼성전자주식회사 산화물 반도체, 이를 포함하는 박막 트랜지스터 및 그 제조방법
JP5435907B2 (ja) * 2007-08-17 2014-03-05 株式会社半導体エネルギー研究所 表示装置の作製方法
JPWO2009034953A1 (ja) 2007-09-10 2010-12-24 出光興産株式会社 薄膜トランジスタ
US8232598B2 (en) 2007-09-20 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US8044464B2 (en) * 2007-09-21 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5215158B2 (ja) * 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
JP5291928B2 (ja) * 2007-12-26 2013-09-18 株式会社日立製作所 酸化物半導体装置およびその製造方法
JP5121478B2 (ja) 2008-01-31 2013-01-16 株式会社ジャパンディスプレイウェスト 光センサー素子、撮像装置、電子機器、およびメモリー素子
KR101490112B1 (ko) * 2008-03-28 2015-02-05 삼성전자주식회사 인버터 및 그를 포함하는 논리회로
JP5325446B2 (ja) * 2008-04-16 2013-10-23 株式会社日立製作所 半導体装置及びその製造方法
JP5202094B2 (ja) * 2008-05-12 2013-06-05 キヤノン株式会社 半導体装置
KR101496148B1 (ko) * 2008-05-15 2015-02-27 삼성전자주식회사 반도체소자 및 그 제조방법
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP5781720B2 (ja) 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2010262859A (ja) * 2009-05-08 2010-11-18 Dx Antenna Co Ltd 広角検知センサを備える電子機器
KR101893332B1 (ko) 2009-11-13 2018-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101803254B1 (ko) * 2009-11-27 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8941113B2 (en) * 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
KR102107591B1 (ko) * 2012-07-18 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 소자 및 프로그래머블 로직 디바이스

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001073846A1 (en) * 2000-03-29 2001-10-04 Hitachi, Ltd. Semiconductor device
JP2002368226A (ja) * 2001-06-11 2002-12-20 Sharp Corp 半導体装置、半導体記憶装置及びその製造方法、並びに携帯情報機器
JP2008536251A (ja) * 2005-04-05 2008-09-04 サンディスク コーポレイション 不揮発性メモリの読み出し動作中の結合の補償
JP2007103918A (ja) * 2005-09-06 2007-04-19 Canon Inc アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタ、アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタの製造方法及びアモルファス酸化物膜の製造方法
WO2008117739A1 (ja) * 2007-03-23 2008-10-02 Idemitsu Kosan Co., Ltd. 半導体デバイス、多結晶半導体薄膜、多結晶半導体薄膜の製造方法、電界効果型トランジスタ、及び、電界効果型トランジスタの製造方法
JP2009206508A (ja) * 2008-01-31 2009-09-10 Canon Inc 薄膜トランジスタ及び表示装置
JP2009277702A (ja) * 2008-05-12 2009-11-26 Canon Inc 半導体素子の閾値電圧の制御方法

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