US20040129933A1 - Pixel current driver for organic light emitting diode displays - Google Patents

Pixel current driver for organic light emitting diode displays Download PDF

Info

Publication number
US20040129933A1
US20040129933A1 US10468319 US46831904A US2004129933A1 US 20040129933 A1 US20040129933 A1 US 20040129933A1 US 10468319 US10468319 US 10468319 US 46831904 A US46831904 A US 46831904A US 2004129933 A1 US2004129933 A1 US 2004129933A1
Authority
US
Grant status
Application
Patent type
Prior art keywords
thin film
current driver
pixel current
film transistors
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10468319
Inventor
Arokia Nathan
Peyman Servati
Kapil Sakariya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ignis Innovation Inc
Original Assignee
Ignis Innovation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Images

Classifications

    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G09G3/3241Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element the current through the light-emitting element being set using a data current provided by the data driver, e.g. by using a two-transistor current mirror
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays
    • H01L27/3276Wiring lines
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0804Sub-multiplexed active matrix panel, i.e. wherein one active driving circuit is used at pixel level for multiple image producing elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/02Improving the quality of display appearance
    • G09G2320/0223Compensation for problems related to R-C delay and attenuation in electrodes of matrix panels, e.g. in gate electrodes or on-substrate video signal electrodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/283Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part comprising components of the field-effect type

Abstract

A pixel current driver comprises a plurality of thin film transistors (TFTs) each having dual gates and for driving OLED layers. A top gate of the dual gates is formed between a source and a drain of each of the thin film transistors, to thereby minimize parasitic capacitance. The top gate is grounded or electrically tied to a bottom gate. The plurality of thin film transistors may be two thin film transistors formed in voltage-programmed manner or five thin film transistors formed in a current-programmed ΔVT-compensated manner. Other versions of the current-programmed circuit with different numbers of thin film transistors are also presented that compensate for δVT. The OLED layer are continuous and vertically stacked on the plurality of thin film transistors to provide an aperture ratio close to 100%.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0001]
  • The present invention relates to a an organic light emitting diode display, and more particularly to an a pixel current driver for an organic light emitting display (OLED), capable of minimizing parasitic couplings between the OLED and the transistor layers. [0002]
  • 2. Description of the Prior Art [0003]
  • OLED displays have gained significant interest recently in display applications in view of their faster response times, larger viewing angles, higher contrast, lighter weight, lower power, amenability to flexible substrates, as compared to liquid crystal displays (LCDs). Despite the OLED's demonstrated superiority over the LCD, there still remain several challenging issues related to encapsulation and lifetime, yield, color efficiency, and drive electronics, all of which are receiving considerable attention. Although passive matrix addressed OLED displays are already in the marketplace, they do not support the resolution needed in the next generation displays, since high information content (HIC) formats are only possible with the active matrix addressing scheme. Active matrix addressing involves a layer of backplane electronics, based on thin-film transistors (TFTS) fabricated using amorphous silicon (a-Si:H), polycrystalline silicon (poly-Si), or polymer technologies, to provide the bias voltage and drive current needed in each OLED pixel. Here, the voltage on each pixel is lower and the current throughout the entire frame period is a low constant value, thus avoiding the excessive peak driving and leakage currents associated with passive matrix addressing. This in turn increases the lifetime of the OLED. [0004]
  • In active matrix OLED (AMOLED) displays, it is important to ensure that the aperture ratio or fill factor (defined as the ratio of light emitting display area to the total pixel area) should be high enough to ensure display quality. Conventional AMOLED displays are based on light emission through an aperture on the glass substrate where the backplane electronics is integrated. Increasing the on-pixel density of TFT integration for stable drive current reduces the size of the aperture. The same happens when pixel sizes are scaled down. The solution to having an aperture ratio that is invariant on scaling or on-pixel integration density is to vertically stack the OLED layer on the backplane electronics, along with a transparent top electrode (see FIG. 2). In FIG. 2, reference numerals S and D denote a source and a drain respectively. This implies a continuous back electrode over the OLED pixel. However, this continuous back electrode can give rise to parasitic capacitance, whose effects become significant when the electrode runs over the switching and other thin film transistors (TFTs). Here, the presence of the back electrode can induce a parasitic channel in TFTs giving rise to high leakage current. The leakage current is the current that flows between source and drain of the TFT when the gate of the TFT is in its OFF state. [0005]
  • SUMMARY OF THE INVENTION
  • Accordingly, it is an object of the present invention to provide to a pixel current driver for an organic light emitting display (OLED), capable of minimizing parasitic couplings between the OLED and the transistor layers. [0006]
  • In order to achieve the above object, a pixel current driver for OLED layer for emitting light according to the present invention comprises a plurality of thin film transistors (TFTs) each having dual gates and for driving the OLED layer. A top gate of the dual gates is formed between a source and a drain of each of the thin film transistors, to thereby minimize parasitic capacitance. [0007]
  • Each of the thin film transistor may be an a-Si:H based thin film transistor or a polysilicon-based thin film transistor. [0008]
  • The pixel current driver is a current mirror based pixel current driver for automatically compensating for shifts in the Vth of each of the thin film transistor in a pixel and the pixel current driver is for monochrome displays or for full color displays. [0009]
  • The dual gates are fabricated in a normal inverted staggered TFT structure. A width of each of the TFTs is formed larger than a length of the same to provide enough spacing between the source and drain for the top gate. Preferably, the length is 30 μm and the width is 1600 μm. The length and width of the transistors may change depending on the maximum drive current required by the circuit and the fabrication technology used. The top gate is grounded or electrically tied to a bottom gate. The plurality of thin film transistors may be two thin film transistors formed in voltage-programmed manner or five thin film transistors formed in a current-programmed ΔV[0010] T-compensated manner, or four or The OLED layer is vertically stacked on the plurality of thin film transistors.
  • With the above structure of an a-Si:H current driver according to the present invention, the charge induced in the top channel of the TFT is minimized, and the leakage currents in the TFT is minimized so as to enhance circuit performance.[0011]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The above objects and features of the present invention will become more apparent by describing in detail preferred embodiments thereof with reference to the attached drawings in which: [0012]
  • FIG. 1 shows variation of required pixel areas with mobility for 2-T and 5-T pixel drivers; [0013]
  • FIG. 2 shows a pixel architecture for surface emissive a-Si:H AMOLED displays; [0014]
  • FIG. 3 shows a cross section of a dual-gate TFT structure; [0015]
  • FIG. 4 shows forward and reverse transfer characteristics of dual-gate TFT for various top gate biases; [0016]
  • FIG. 5A and FIG. 5B show an equivalent circuit for a 2-T pixel driver and its associated input-output timing diagrams; [0017]
  • FIG. 6A and FIG. 6B show an equivalent circuit for a 5-T pixel driver and its associated input-output timing diagrams; [0018]
  • FIG. 7 shows transient performance of the 5-T driver for three consecutive write cycles; [0019]
  • FIG. 8 shows input-output transfer characteristics for the 2-T pixel driver for different supply voltages; [0020]
  • FIG. 9 shows input-output transfer characteristics for the 5-T pixel driver for different supply voltages; [0021]
  • FIG. 10 shows variation in OLED current as a function of the normalized shift in threshold voltage; [0022]
  • FIG. 11 shows a 2-T polysilicon based pixel current driver having p-channel drive TFTs; [0023]
  • FIG. 12 shows a 4-T pixel current driver for OLED displays; [0024]
  • FIG. 13 shows a 4-T pixel current driver with a lower discharge time; [0025]
  • FIG. 14 shows a 4-T pixel current driver without non-linear gain; [0026]
  • FIG. 15 shows a 4-T pixel current driver that is the building block for the full color circuit; and [0027]
  • FIG. 16 shows a full color (RGB) pixel current driver for OLED displays.[0028]
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Although amorphous Si does not enjoy equivalent electronic properties compared to poly-Si, it adequately meets many of the drive requirements for small area displays such as those needed in pagers, cell phones, and other mobile devices. Poly-Si TFTs have one key advantage in that they are able to provide better pixel drive capability because of their higher mobility, which can be of the order of μ[0029] FE˜100 cm2/Vs. This makes poly-Si highly desirable for large area (e.g. laptop size) VGA and SVGA displays. The lower mobility associated with a-Si:H TFTs (μFE˜1 cm2/Vs) is not a limiting factor since the drive transistor in the pixel can be scaled up in area to provide the needed drive current. The OLED drive current density is typically 10 mA/cm2 at 10V operation to provide a brightness of 100 cd/m2—the required luminance for most displays. For example, with an a-Si:H TFT mobility of 0.5 cm2/Vs and channel length of 25 μm, this drive current requirement translates into required pixel area of 300 μm2, which adequately meets the requirements of pixel resolution and speed for some 3 inch monochrome display applications. FIG. 1 illustrates simulation results for the variation of the required pixel size with device mobility calculated for two types of drivers, which will be elaborated later, the 2-T and the 5-T drivers, wherein μ0 denotes a reference mobility whose value is in the range 0.1 to 1 cm2/Vs. For instance, the area of the pixel for the 2-T driver (see FIG. 5A) comprises of the area of the switching transistors, area of the drive transistor, and the area occupied by interconnects, bias lines, etc. In FIG. 1, the drive current and frame rate are kept constant at 10 μA and 50 Hz, respectively, for a 230×230 array. It is clear that there is no significant savings in area between the 2-T and 5-T drivers but the savings are considerable with increasing mobility. This stems mainly from the reduction in the area of the drive transistor where there is a trade-off between μFE and TFT aspect ratio, W/L (Wide/Length).
  • In terms of threshold voltage (V[0030] T) uniformity and stability, both poly-Si and a-Si:H share the same concerns, although in comparison, the latter provides for better spatial uniformity but not stability (ΔVT). Thus the inter-pixel variation in the drive current can be a concern in both cases, although clever circuit design techniques can be employed to compensate for ΔVT hence improving drive current uniformity. In terms of long term reliability, it is not quite clear with poly-Si technology, although there are already products based on a-Si:H technology for displays and imaging, although the reliability issues associated with OLEDs may yet be different. The fabrication processes associated with a-Si:H technology are standard and adapted from mainstream integrated circuit (IC) technology, but with capital equipment costs that are much lower. One of the main advantages of the a-Si:H technology is that it has become low cost and well-established technology, while poly-Si has yet to reach the stage of manufacturability. The technology also holds great promise for futuristic applications since good as-deposited a-Si:H, a-SiNx:H, and TFT arrays can be achieved at low temperatures (≦120° C.) thus making it amenable to plastic substrates, which is a critical requirement for mechanically flexible displays.
  • To minimize the conduction induced in all TFTs in the pixel by the back electrode, an alternate TFT structure based on a dual-gate structure is employed. In a dual gate TFT (see FIG. 3), a top gate electrode is added to the TFT structure to prevent the OLED electrodes from biasing the a-Si:H channel area (refer to FIG. 2). The voltage on the top gate can be chosen such so as to minimize the charge induced in the (parasitic) top channel of the TFT. The objective underlying the choice of the voltage on the top gate is to minimize parasitic capacitance in the driver circuits and leakage currents in the TFTs so as to enhance circuit performance. In what follows, the operation of the dual-gate TFT is described, which will be central to surface emissive (100% aperture ratio) AMOLED displays based on a-Si:H backplane electronics. [0031]
  • FIG. 3 illustrates the structure of a dual-gate TFT fabricated for this purpose, wherein reference numerals S and D denote a source and a drain respectively. The fabrication steps are the same as of that of a normal inverted staggered TFT structure except that it requires a sixth mask for patterning the top gate. The length of the TFT is around 30 μm to provide enough spacing between the source and drain for the top gate, and the width is made very large (1600 μm) with four of these TFTs are interconnected in parallel to create a sizeable leakage current for measurement. A delay time is inserted in the measurement of the current to ensure that the measurement has passed the transient period created by defects in the a-Si:H active layer, which give rise to a time-dependent capacitance. [0032]
  • FIG. 4 shows results of static current measurements for four cases: first when the top gate is tied to −10V, second when the top gate is grounded, third when the top gate is floating, and lastly when the top gate is shorted to the bottom gate. With a floating top gate, the characteristics are almost similar to that of a normal single gate TFT. The leakage current is relatively high particularly when the top gate is biased with a negative voltage. The lowest values of leakage current are obtained when the top gate is pegged to either 0V or to the voltage of the bottom gate. In particular, with the latter the performance of the TFT in the (forward) sub-threshold regime of operation is significantly improved. This enhancement in sub-threshold performance can be explained by the forced shift of the effective conduction path away from the bottom interface to the bulk a-Si:H region due to the positive bias on the top gate. This in turn decreases the effect of the trap states at the bottom interface on the sub-threshold slope of the TFT. [0033]
  • It should be noted that although the addition of another metal contact as the top gate reduces the leakage current of the TFT, it can potentially-degrade pixel circuit performance by possible parasitic capacitances introduced by vertically stacking the OLED pixel. Thus the choice of top gate connection becomes extremely critical. For example, if the top gates in the pixel circuit are connected to the bottom gates of the associated TFTs, this gives rise to parasitic capacitances located between the gates and the cathode, which can lead to undesirable display operation (due to the charging up of the parasitic capacitance) when the multiplexer O/P drives the TFT switch. On the other hand, if the top gates are grounded, this results in the parasitic capacitance being grounded to yield reliable and stable circuit operation. [0034]
  • The OLED drive circuits considered here are the well-known voltage-programmed 2-T driver and the more sophisticated current-programmed ΔV[0035] T-compensated 5-T version (see FIGS. 5A and 6A). The latter is a significant variation of the previous designs, leading to reduced pixel area (<300 μm), reduced leakage, lower supply voltage (20V), higher linearity (˜30 dB), and larger dynamic range (˜40 dB). Before dwelling on the operation of the 5-T driver, the operation of the relatively simple voltage-driven 2-T driver is described. FIG. 5B shows input-output timing diagrams of the 2-T pixel driver. When the address line is activated, the voltage on the data line starts charging capacitor Cs and the gate capacitance of the driver transistor T2. Depending on the voltage on the data line, the capacitor charges up to turn the driver transistor T2 on, which then starts conducting to drive the OLED with the appropriate level of current. When the address line is turned off, T1 is turned off but the voltage at the gate of T2 remains since the leakage current of T1 is trivial in comparison. Hence, the current through the OLED remains unchanged after the turn off process. The OLED current changes only the next time around when a different voltage is written into the pixel.
  • Unlike the previous driver, the data that is written into the 5-T pixel in this case is a current (see FIG. 6A). FIG. 6B shows input-output timing diagrams of a 5-T pixel driver. The address line voltage, V[0036] address and Idata are activated or deactivated simultaneously. When Vaddress is activated, it forces T1 and T2 to turn on. T1 immediately starts conducting but T2 does not since T3 and T4 are off. Therefore, the voltages at the drain and source of T2 become equal. The current flow through T1 starts charging the gate capacitor of transistors T3 and T5, very much like the 2-T driver. The current of these transistors start increasing and consequently T2 starts to conduct current. Therefore, T1's share of Idata reduces and T2's share of Idata increases. This process continues until the gate capacitors of T3 and T5 charge (via T1) to a voltage that forces the current of T3 to be Idata. At this time, the current of T1 is zero and the entire Idata goes through T2 and T3. At the same time, T5 drives a current through the OLED, which is ideally equal to Idata*(W5/W3), which signifies a current gain. Now if Idata and Vaddress are deactivated, T2 will turn off, but due to the presence of capacitances in T3 and T5, the current of these two devices cannot be changed easily, since the capacitances keep the bias voltages constant. This forces T4 to conduct the same current as that of T3, to enable the driver T5 to drive the same current into the OLED even when the write period is over. Writing a new value into the pixel then changes the current driven into the OLED.
  • The result of transient simulation for the 5-T driver circuit is shown in FIG. 7. As can be seen, the circuit has a write time of <70 μs, which is acceptable for most applications. The 5-T driver circuit does not increase the required pixel size significantly (see FIG. 1) since the sizes of T2, T3, and T4 are scaled down. This also provides an internal gain (W[0037] 5/W3=8), which reduces the required input current to <2 μA for 10 μA OLED current. The transfer characteristics for the 2-T and 5-T driver circuits are illustrated in FIGS. 8 and 9, respectively, generated using reliable physically-based TFT models for both forward and reverse regimes. A much improved linearity (˜30 dB) in the transfer characteristics (Idata/IOLED) is observed for the 5-T driver circuit due to the geometrically-defined internal pixel gain as compared to similar designs. In addition, there are two components (OLED and T5) in the high current path, which in turn decreases the required supply voltage and hence improves the dynamic range. According to FIG. 9, a good dynamic range (˜40 dB) is observed for supply voltage of 20V and drive currents in the range IOLED≦10 μA, which is realistic for high brightness. FIG. 10 illustrates variation in the OLED current with the shift in threshold voltage for the 2-T and 5-T driver circuits. The 5-T driver circuit compensates for the shift in threshold voltage particularly when the shift is smaller than 10% of the supply voltage. This is because the 5-T driver circuit is current-programmed. In contrast, the OLED current in the 2-T circuit changes significantly with a shift in threshold voltage. The 5-T driver circuit described here operates at much lower supply voltages, has a much larger drive current, and occupies less area.
  • The pixel architectures are compatible to surface (top) emissive AMOLED displays that enables high on-pixel TFT integration density for uniformity in OLED drive current and high aperture ratio. A 5-T driver circuit has been described that provides on-pixel gain, high linearity (˜30 dB), and high dynamic range (˜40 dB) at low supply voltages (15-20V) compared to the similar designs (27V). The results described here illustrate the feasibility of using a-Si:H for 3-inch mobile monochrome display applications on both glass and plastic substrates. With the latter, although the mobility of the TFT is lower, the size of the drive transistor can be scaled up yet meeting the requirements on pixel area as depicted in FIG. 1. [0038]
  • Polysilicon has higher electron and hole mobilities than amorphous silicon. The hole mobilities are large enough to allow the fabrication of p-channel TFTs. [0039]
  • The advantage of having p-channel TFTs is that bottom emissive OLEDs can be used along with a p-channel drive TFT to make a very good current source. One such circuit is shown in FIG. 11. In FIG. 11, the source of the p-type drive TFT is connected to Vdd. Therefore, Vgs, gate-to-source voltage, and hence the drive current of the p-type TFT is independent of OLED characteristics. In other words, the driver shown in FIG. 11 performs as a good current source. Hence, bottom emissive OLEDs are suitable for use with p-channel drive TFTs, and top emissive OLEDs are suitable for use with n-channel TFTs. [0040]
  • The trade-off with using polysilicon is that the process of making polysilicon TFTs requires much higher temperatures than that of amorphous silicon. This high temperature processing requirement greatly increases the cost, and is not amenable to plastic substrates. Moreover, polysilicon technology is not as mature and widely available as amorphous silicon. In contrast, amorphous silicon is a well-established technology currently used in liquid crystal displays (LCDs). It is due to these reasons that amorphous silicon combined with top emissive OLED based circuit designs is most promising for AMOLED displays. [0041]
  • Compared to polysilicon TFTs, amorphous silicon TFTs are n-type and thus are more suitable for top emission circuits as shown in FIG. 2. However, amorphous silicon TFTs have inherent stability problems due to the material structure. In amorphous silicon circuit design, the biggest hurdle is the increase in threshold voltage V[0042] th after prolonged gate bias. This shift is particularly evident in the drive TFT of an OLED display pixel. This drive TFT is always in the ‘ON’ state, in which there is a positive voltage at its gate. As a result, its Vth increases and the drive current decreases based on the current-voltage equation below:
  • Ids=(μC ox W/2L)(V gs −V th)2 (in Saturation region)
  • In the display, this would mean that the brightness of the OLED would decrease over time, which is unacceptable. Hence, the 2-T circuits shown earlier are not practical for OLED displays as they do not compensate for any increase in V[0043] th.
  • The first current mirror based pixel driver circuit is presented, which automatically compensated for shifts in the V[0044] th of the drive TFT in a pixel. This circuit is the 5-T circuit shown in FIG. 6A.
  • Four more OLED pixel driver circuits are presented for monochrome displays, and one circuit for full colour displays. All these circuits have mechanisms that automatically compensate for V[0045] th shift. The first circuit shown in FIG. 12 is a modification of the 5-T circuit of FIG. 6A. (Transistor T4 has been removed from the 5-T circuit). This circuit occupies a smaller area than the 5-T circuit, and provides a higher dynamic range. The higher dynamic range allows for a larger signal swing at the input, which means that the OLED brightness can be adjusted over a larger range.
  • FIG. 12 shows a 4-T pixel driver circuit for OLED displays. The circuit shown in FIG. 13 is a 4-T pixel driver circuit based on a current mirror. The advantage of this circuit is that the discharge time of the capacitor Cs is substantially reduced. This is because the discharge path has two TFTs (as compared to three TFTs in the circuit of FIG. 12). The charging time remains the same. The other advantage is that there is an additional gain provided by this circuit because T[0046] 3 and T4 do not have the same source voltages. However, this gain is non-linear and may not be desirable in some cases.
  • In FIG. 14, another 4-T circuit is shown. This circuit does not have the non-linear gain present in the previous circuit (FIG. 13) since the source terminals of T[0047] 3 and T4 are at the same voltage. It still maintains the lower capacitance discharge time, along with the other features of the circuit of FIG. 8.
  • FIG. 15 shows another version of the 4-T circuit. This circuit is does not have good current mirror properties. However, this circuit forms the building block for the 3 colour RGB circuit shown in FIG. 16. It also has a low capacitance discharge time and high dynamic range. [0048]
  • The full colour circuit shown in FIG. 16 minimizes the area required by an RGB pixel on a display, while maintaining the desirable features like threshold voltage shift compensation, in-pixel current gain, low capacitance discharge time, and high dynamic range. [0049]
  • It is important to note that the dual-gate TFTs are used in the above-mentioned circuits to enable vertical integration of the OLED layers with minimum parasitic effects. But nevertheless the circuit compensates for the Vth shift even if the simple single-gate TFTs. In addition, these circuits use n-type amorphous silicon TFTs. However, the circuits are applicable to polysilicon technology using p-type or n-type TFTs. These circuits when made in polysilicon can compensate for the non-uniformity of the threshold voltage, which is a problem in this technology. The p-type circuits are conjugates of the above-mentioned circuits and are suitable for the bottom emissive pixels. [0050]

Claims (15)

    We claim:
  1. 1. A pixel current driver for an organic light emitting diode (OLED) having an OLED layer for emitting light, comprising:
    a plurality of thin film transistors (TFTs) each having dual gates and for driving the OLED layer, a top gate of the dual gates being formed between a source and a drain of each of the thin film transistors, to thereby minimize parasitic capacitance.
  2. 2. The pixel current driver as claimed in claim 1, wherein each of the thin film transistor is an a-Si:H based thin film transistor.
  3. 3. The pixel current driver as claimed in claim 1, wherein each of the thin film transistor is a polysilicon-based thin film transistor.
  4. 4. The pixel current driver as claimed in claim 3, wherein each of the thin film transistors is a p-channel thin film transistor.
  5. 5. The pixel current driver as claimed in claim 2, wherein the dual gates are fabricated in a normal inverted staggered TFT structure.
  6. 6. The pixel current driver as claimed in claim 2, wherein the top gate is grounded.
  7. 7. The pixel current driver as claimed in claim 2, wherein the top gate is electrically tied to a bottom gate.
  8. 8. The pixel current driver as claimed in claim 2, wherein the plurality of thin film transistors are two thin film transistors.
  9. 9. The pixel current driver as claimed in claim 8, wherein the two thin film transistors are formed in a voltage programmed manner.
  10. 10. The pixel current driver as claimed in claim 2, wherein the plurality of thin film transistors are five thin film transistors.
  11. 11. The pixel current driver as claimed in claim 10, wherein the five thin film transistors are formed in a current-programmed ΔVT-compensated manner.
  12. 12. The pixel current driver as claimed in claim 2, wherein the OLED layer is continuously and vertically stacked on the plurality of thin film transistors.
  13. 13. The pixel current driver as claimed in claim 2, wherein the pixel current driver is a current mirror based pixel current driver for automatically compensating for shifts in the Vth of each of the thin film transistor in a pixel.
  14. 14. The pixel current driver as claimed in claim 10, wherein the pixel current driver is for monochrome displays.
  15. 15. The pixel current driver as claimed in claim 10, wherein the pixel current driver is for full color displays.
US10468319 2001-02-16 2002-02-18 Pixel current driver for organic light emitting diode displays Abandoned US20040129933A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US26890001 true 2001-02-16 2001-02-16
PCT/CA2002/000173 WO2002067327A3 (en) 2001-02-16 2002-02-18 Pixel current driver for organic light emitting diode displays

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US11220094 US7569849B2 (en) 2001-02-16 2005-09-06 Pixel driver circuit and pixel circuit having the pixel driver circuit
US11247455 US7414600B2 (en) 2001-02-16 2005-10-11 Pixel current driver for organic light emitting diode displays
US12504510 US20090284501A1 (en) 2001-02-16 2009-07-16 Pixel driver circuit and pixel circuit having the pixel driver circuit
US13089622 US8664644B2 (en) 2001-02-16 2011-04-19 Pixel driver circuit and pixel circuit having the pixel driver circuit
US14038651 US8890220B2 (en) 2001-02-16 2013-09-26 Pixel driver circuit and pixel circuit having control circuit coupled to supply voltage
US14516076 US20150154907A1 (en) 2001-02-16 2014-10-16 Pixel driver circuit and pixel circuit having control circuit coupled to supply voltage

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2002/000173 A-371-Of-International WO2002067327A3 (en) 2001-02-16 2002-02-18 Pixel current driver for organic light emitting diode displays

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US11220094 Continuation-In-Part US7569849B2 (en) 2001-02-16 2005-09-06 Pixel driver circuit and pixel circuit having the pixel driver circuit
US11247455 Continuation US7414600B2 (en) 2001-02-16 2005-10-11 Pixel current driver for organic light emitting diode displays

Publications (1)

Publication Number Publication Date
US20040129933A1 true true US20040129933A1 (en) 2004-07-08

Family

ID=23024994

Family Applications (2)

Application Number Title Priority Date Filing Date
US10468319 Abandoned US20040129933A1 (en) 2001-02-16 2002-02-18 Pixel current driver for organic light emitting diode displays
US11247455 Active 2022-12-26 US7414600B2 (en) 2001-02-16 2005-10-11 Pixel current driver for organic light emitting diode displays

Family Applications After (1)

Application Number Title Priority Date Filing Date
US11247455 Active 2022-12-26 US7414600B2 (en) 2001-02-16 2005-10-11 Pixel current driver for organic light emitting diode displays

Country Status (4)

Country Link
US (2) US20040129933A1 (en)
EP (2) EP1488454B1 (en)
JP (1) JP4383743B2 (en)
WO (1) WO2002067327A3 (en)

Cited By (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040150593A1 (en) * 2003-01-31 2004-08-05 Wen-Cheng Yen Active matrix LED display driving circuit
US20040183758A1 (en) * 2003-03-21 2004-09-23 Industrial Technology Research Institute Pixel circuit for active matrix OLED and driving method
US20040263499A1 (en) * 2002-11-29 2004-12-30 Yoshifumi Tanada Display device, driving method thereof, and electronic apparatus
US20060061526A1 (en) * 2004-09-21 2006-03-23 Casio Computer Co., Ltd. Drive circuit and display apparatus
US20060066512A1 (en) * 2004-09-28 2006-03-30 Sharp Laboratories Of America, Inc. Dual-gate transistor display
US20060119548A1 (en) * 2004-12-03 2006-06-08 Je-Hsiung Lan Circuits including switches for electronic devices and methods of using the electronic devices
US20060118869A1 (en) * 2004-12-03 2006-06-08 Je-Hsiung Lan Thin-film transistors and processes for forming the same
US20060149493A1 (en) * 2004-12-01 2006-07-06 Sanjiv Sambandan Method and system for calibrating a light emitting device display
US20060290614A1 (en) * 2005-06-08 2006-12-28 Arokia Nathan Method and system for driving a light emitting device display
US20070075638A1 (en) * 2005-09-30 2007-04-05 Casio Computer Co., Ltd Display panel
US20070090459A1 (en) * 2005-10-26 2007-04-26 Motorola, Inc. Multiple gate printed transistor method and apparatus
US20070166843A1 (en) * 2001-06-01 2007-07-19 Semiconductor Energy Laboratory Co., Ltd. Method of repairing a light-emitting device and method of manufacturing a light-emitting device
WO2007120474A2 (en) * 2006-04-10 2007-10-25 Emagin Corporation Auto-calibrating gamma correction circuit for amoled pixel display drive
US20080090620A1 (en) * 2002-11-27 2008-04-17 Semiconductor Energy Laboratory Co., Ltd. Display Device and Electronic Device
US20080197777A1 (en) * 2001-02-21 2008-08-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
US20100039458A1 (en) * 2008-04-18 2010-02-18 Ignis Innovation Inc. System and driving method for light emitting device display
US20100225571A1 (en) * 2009-03-06 2010-09-09 Sakariya Kapil V Circuitry for independent gamma adjustment points
US20100225657A1 (en) * 2009-03-06 2010-09-09 Sakariya Kapil V Systems and methods for operating a display
US20100328299A1 (en) * 2001-09-21 2010-12-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method of light emitting device and electronic device
US20110084281A1 (en) * 2001-02-26 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic equipment
US20110134094A1 (en) * 2004-11-16 2011-06-09 Ignis Innovation Inc. System and driving method for active matrix light emitting device display
US20120162275A1 (en) * 2010-12-28 2012-06-28 Samsung Mobile Display Co., Ltd. Organic light emitting display device, driving method thereof, and manufacturing method thereof
US20130328044A1 (en) * 2009-07-03 2013-12-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8659518B2 (en) 2005-01-28 2014-02-25 Ignis Innovation Inc. Voltage programmed pixel circuit, display system and driving method thereof
US8664644B2 (en) 2001-02-16 2014-03-04 Ignis Innovation Inc. Pixel driver circuit and pixel circuit having the pixel driver circuit
US8743096B2 (en) 2006-04-19 2014-06-03 Ignis Innovation, Inc. Stable driving scheme for active matrix displays
US8901579B2 (en) 2011-08-03 2014-12-02 Ignis Innovation Inc. Organic light emitting diode and method of manufacturing
USRE45291E1 (en) 2004-06-29 2014-12-16 Ignis Innovation Inc. Voltage-programming scheme for current-driven AMOLED displays
US8994617B2 (en) 2010-03-17 2015-03-31 Ignis Innovation Inc. Lifetime uniformity parameter extraction methods
US9030506B2 (en) 2009-11-12 2015-05-12 Ignis Innovation Inc. Stable fast programming scheme for displays
US9058775B2 (en) 2006-01-09 2015-06-16 Ignis Innovation Inc. Method and system for driving an active matrix display circuit
US9070775B2 (en) 2011-08-03 2015-06-30 Ignis Innovations Inc. Thin film transistor
US9093028B2 (en) 2009-12-06 2015-07-28 Ignis Innovation Inc. System and methods for power conservation for AMOLED pixel drivers
US9134825B2 (en) 2011-05-17 2015-09-15 Ignis Innovation Inc. Systems and methods for display systems with dynamic power control
US9153172B2 (en) 2004-12-07 2015-10-06 Ignis Innovation Inc. Method and system for programming and driving active matrix light emitting device pixel having a controllable supply voltage
US9269322B2 (en) 2006-01-09 2016-02-23 Ignis Innovation Inc. Method and system for driving an active matrix display circuit
US9336717B2 (en) 2012-12-11 2016-05-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9351368B2 (en) 2013-03-08 2016-05-24 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9370075B2 (en) 2008-12-09 2016-06-14 Ignis Innovation Inc. System and method for fast compensation programming of pixels in a display
US9385169B2 (en) 2011-11-29 2016-07-05 Ignis Innovation Inc. Multi-functional active matrix organic light-emitting diode display
CN105932032A (en) * 2016-06-16 2016-09-07 深圳市华星光电技术有限公司 Array substrate and preparation method therefor
US20160293083A1 (en) * 2014-09-19 2016-10-06 Boe Technology Group Co., Ltd. Organic light emitting display device, driving method thereof and display apparatus
US9472138B2 (en) 2003-09-23 2016-10-18 Ignis Innovation Inc. Pixel driver circuit with load-balance in current mirror circuit
US9489891B2 (en) 2006-01-09 2016-11-08 Ignis Innovation Inc. Method and system for driving an active matrix display circuit
US9502653B2 (en) 2013-12-25 2016-11-22 Ignis Innovation Inc. Electrode contacts
US9606607B2 (en) 2011-05-17 2017-03-28 Ignis Innovation Inc. Systems and methods for display systems with dynamic power control
US9697771B2 (en) 2013-03-08 2017-07-04 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9721505B2 (en) 2013-03-08 2017-08-01 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9754971B2 (en) 2013-05-18 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
USRE46561E1 (en) 2008-07-29 2017-09-26 Ignis Innovation Inc. Method and system for driving light emitting display
US9786223B2 (en) 2012-12-11 2017-10-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9842889B2 (en) 2014-11-28 2017-12-12 Ignis Innovation Inc. High pixel density array architecture
US9881587B2 (en) 2011-05-28 2018-01-30 Ignis Innovation Inc. Systems and methods for operating pixels in a display to mitigate image flicker
US9886899B2 (en) 2011-05-17 2018-02-06 Ignis Innovation Inc. Pixel Circuits for AMOLED displays
US9952698B2 (en) 2013-03-15 2018-04-24 Ignis Innovation Inc. Dynamic adjustment of touch resolutions on an AMOLED display

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4581893B2 (en) * 2001-09-10 2010-11-17 セイコーエプソン株式会社 Electronic devices, and electronic equipment
JP2010122700A (en) * 2001-09-10 2010-06-03 Seiko Epson Corp Electro-optical device and electronic equipment
JP4742726B2 (en) * 2001-09-10 2011-08-10 セイコーエプソン株式会社 Electronic devices, and electronic equipment
US6753655B2 (en) * 2002-09-19 2004-06-22 Industrial Technology Research Institute Pixel structure for an active matrix OLED
KR20040062065A (en) 2002-12-31 2004-07-07 엘지.필립스 엘시디 주식회사 active matrix organic electroluminescence display device
US7419638B2 (en) * 2003-01-14 2008-09-02 Micronics, Inc. Microfluidic devices for fluid manipulation and analysis
US7253815B2 (en) * 2003-06-05 2007-08-07 Au Optronics Corp. OLED display and pixel structure thereof
US20040246201A1 (en) * 2003-06-05 2004-12-09 Chih-Feng Sung OLED display and pixel structure thereof
KR100606416B1 (en) * 2004-11-17 2006-07-31 엘지.필립스 엘시디 주식회사 Driving Apparatus And Method For Organic Light-Emitting Diode
US9275579B2 (en) 2004-12-15 2016-03-01 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9280933B2 (en) 2004-12-15 2016-03-08 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US10013907B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
JP5128287B2 (en) 2004-12-15 2013-01-23 イグニス・イノベイション・インコーポレーテッドIgnis Innovation Incorporated The method for real-time calibration for a display array and system
US10012678B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
CA2518276A1 (en) 2005-09-13 2007-03-13 Ignis Innovation Inc. Compensation technique for luminance degradation in electro-luminance devices
CA2556961A1 (en) 2006-08-15 2008-02-15 Ignis Innovation Inc. Oled compensation technique based on oled capacitance
JP4748456B2 (en) * 2006-09-26 2011-08-17 カシオ計算機株式会社 Pixel driving circuit and an image display device
US20080165096A1 (en) * 2007-01-09 2008-07-10 Himax Technologies Limited Flat Panel Display
JP5073544B2 (en) * 2008-03-26 2012-11-14 富士フイルム株式会社 Display device
JP5063433B2 (en) * 2008-03-26 2012-10-31 富士フイルム株式会社 Display device
JP5207885B2 (en) 2008-09-03 2013-06-12 キヤノン株式会社 Pixel circuits, light emitting display and a driving method thereof
CA2669367A1 (en) 2009-06-16 2010-12-16 Ignis Innovation Inc Compensation technique for color shift in displays
US20110080442A1 (en) * 2009-10-05 2011-04-07 Emagin Corporation system for color shift compensation in an oled display using a look-up table, a method and a computer-readable medium
KR101803254B1 (en) * 2009-11-27 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9384698B2 (en) 2009-11-30 2016-07-05 Ignis Innovation Inc. System and methods for aging compensation in AMOLED displays
CA2688870A1 (en) 2009-11-30 2011-05-30 Ignis Innovation Inc. Methode and techniques for improving display uniformity
US9311859B2 (en) 2009-11-30 2016-04-12 Ignis Innovation Inc. Resetting cycle for aging compensation in AMOLED displays
US8803417B2 (en) 2009-12-01 2014-08-12 Ignis Innovation Inc. High resolution pixel architecture
KR101117729B1 (en) * 2009-12-17 2012-03-07 삼성모바일디스플레이주식회사 Pixel circuit, and organic light emitting display and method for controlling a brightness thereof
CA2692097A1 (en) 2010-02-04 2011-08-04 Ignis Innovation Inc. Extracting correlation curves for light emitting device
US9881532B2 (en) 2010-02-04 2018-01-30 Ignis Innovation Inc. System and method for extracting correlation curves for an organic light emitting device
US8692743B2 (en) 2010-10-28 2014-04-08 Au Optronics Corp. Pixel driving circuit of an organic light emitting diode
US8907991B2 (en) 2010-12-02 2014-12-09 Ignis Innovation Inc. System and methods for thermal compensation in AMOLED displays
CN102081905B (en) 2010-12-30 2013-04-24 友达光电股份有限公司 Pixel driving circuit of organic light-emitting diodes
JP5178861B2 (en) * 2011-03-01 2013-04-10 株式会社半導体エネルギー研究所 Display device
US8847942B2 (en) 2011-03-29 2014-09-30 Intrigue Technologies, Inc. Method and circuit for compensating pixel drift in active matrix displays
US8599191B2 (en) 2011-05-20 2013-12-03 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9799246B2 (en) 2011-05-20 2017-10-24 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US8576217B2 (en) 2011-05-20 2013-11-05 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9530349B2 (en) 2011-05-20 2016-12-27 Ignis Innovations Inc. Charged-based compensation and parameter extraction in AMOLED displays
US9171500B2 (en) 2011-05-20 2015-10-27 Ignis Innovation Inc. System and methods for extraction of parasitic parameters in AMOLED displays
US9466240B2 (en) 2011-05-26 2016-10-11 Ignis Innovation Inc. Adaptive feedback system for compensating for aging pixel areas with enhanced estimation speed
JP2014517940A (en) 2011-05-27 2014-07-24 イグニス・イノベイション・インコーポレーテッドIgnis Innovation Incorporated System and method for aging compensation in Amoled display
JP5832399B2 (en) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 The light-emitting device
US8937632B2 (en) 2012-02-03 2015-01-20 Ignis Innovation Inc. Driving system for active-matrix displays
US9747834B2 (en) 2012-05-11 2017-08-29 Ignis Innovation Inc. Pixel circuits including feedback capacitors and reset capacitors, and display systems therefore
US8922544B2 (en) 2012-05-23 2014-12-30 Ignis Innovation Inc. Display systems with compensation for line propagation delay
WO2014108879A1 (en) 2013-01-14 2014-07-17 Ignis Innovation Inc. Driving scheme for emissive displays providing compensation for driving transistor variations
US9830857B2 (en) 2013-01-14 2017-11-28 Ignis Innovation Inc. Cleaning common unwanted signals from pixel measurements in emissive displays
CN103117042B (en) * 2013-02-22 2015-03-18 合肥京东方光电科技有限公司 Pixel unit drive circuit, pixel unit drive method, pixel unit and display device
EP2779147B1 (en) 2013-03-14 2016-03-02 Ignis Innovation Inc. Re-interpolation with edge detection for extracting an aging pattern for AMOLED displays
US9324268B2 (en) 2013-03-15 2016-04-26 Ignis Innovation Inc. Amoled displays with multiple readout circuits
CN107452314A (en) 2013-08-12 2017-12-08 伊格尼斯创新公司 Method And Device Used For Images To Be Displayed By Display And Used For Compensating Image Data
CN103500752A (en) * 2013-09-27 2014-01-08 京东方科技集团股份有限公司 OLED (Organic Light Emitting Diode) pixel structure and OLED display device
US9761170B2 (en) 2013-12-06 2017-09-12 Ignis Innovation Inc. Correction for localized phenomena in an image array
US9741282B2 (en) 2013-12-06 2017-08-22 Ignis Innovation Inc. OLED display system and method
KR20150109009A (en) * 2014-03-18 2015-10-01 삼성디스플레이 주식회사 Thin film transistor array panel and manufacturing method thereof
KR20160018892A (en) * 2014-08-07 2016-02-18 삼성디스플레이 주식회사 Pixel circuit and organic light emitting display device having the same
CA2892714A1 (en) 2015-05-27 2016-11-27 Ignis Innovation Inc Memory bandwidth reduction in compensation system
US9806197B1 (en) 2016-07-13 2017-10-31 Innolux Corporation Display device having back gate electrodes

Citations (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1544838A (en) * 1923-08-25 1925-07-07 Electric Water Sterilizer & Oz Ozone generator
US1585976A (en) * 1922-03-02 1926-05-25 Stemco Engineering Company Fluid gauge
US1743202A (en) * 1926-10-04 1930-01-14 Sun Maid Raisin Growers Of Cal Ozone apparatus
US2113913A (en) * 1936-02-01 1938-04-12 Wilson H Cragun Ozonator
US3607709A (en) * 1969-03-13 1971-09-21 Air And Water Purification Inc Ozone generator
US3784838A (en) * 1971-08-25 1974-01-08 Purification Sciences Inc Solid state frequency converter for corona generator
US3801791A (en) * 1971-11-15 1974-04-02 R Schaefer Ozone generator
US3883413A (en) * 1972-09-25 1975-05-13 Avco Corp Ozone generator using pulsed electron beam and decaying electric field
US4062748A (en) * 1975-09-06 1977-12-13 Pavel Imris Method and apparatus for producing ozone
US4159971A (en) * 1976-02-19 1979-07-03 Arthur Gneupel Ozone generator
US4386395A (en) * 1980-12-19 1983-05-31 Webster Electric Company, Inc. Power supply for electrostatic apparatus
US4818498A (en) * 1982-12-22 1989-04-04 Bruno Bachhofer Ozone generator employing plate-shaped high-voltage electrodes
US4970056A (en) * 1989-01-18 1990-11-13 Fusion Systems Corporation Ozone generator with improved dielectric and method of manufacture
US4996523A (en) * 1988-10-20 1991-02-26 Eastman Kodak Company Electroluminescent storage display with improved intensity driver circuits
US5047744A (en) * 1990-01-23 1991-09-10 Plasma Technics, Inc. High voltage fluid filled transformer
US5124132A (en) * 1991-06-20 1992-06-23 Plasma Technics, Inc. Corona discharge ozone generator
US5137697A (en) * 1991-05-23 1992-08-11 Quantum Electronics Corporation Ozone generator
US5258165A (en) * 1991-06-26 1993-11-02 Osmonics, Inc. Multi-tube ozone generator and method of making same
US5266515A (en) * 1992-03-02 1993-11-30 Motorola, Inc. Fabricating dual gate thin film transistors
US5313145A (en) * 1992-08-31 1994-05-17 Francis Jr Ralph M Power supply for a gas discharge device
US5417936A (en) * 1992-06-08 1995-05-23 Nippon Ozone Co., Ltd. Plate-type ozone generator
US5424893A (en) * 1994-03-11 1995-06-13 Francis, Jr.; Ralph M. Gas discharge device power supply with ground fault protection
US5498880A (en) * 1995-01-12 1996-03-12 E. I. Du Pont De Nemours And Company Image capture panel using a solid state device
US5503809A (en) * 1993-04-19 1996-04-02 John T. Towles Compact ozone generator
US5554345A (en) * 1992-10-14 1996-09-10 Novozone (N.V.) Limited Ozone generation apparatus and method
US5573733A (en) * 1992-08-11 1996-11-12 Poptec Ltee Inner electrode for an ozone generator, ozone generator containing said electrode and method of use of said ozone generator
US5619033A (en) * 1995-06-07 1997-04-08 Xerox Corporation Layered solid state photodiode sensor array
US5637279A (en) * 1994-08-31 1997-06-10 Applied Science & Technology, Inc. Ozone and other reactive gas generator cell and system
US5648276A (en) * 1993-05-27 1997-07-15 Sony Corporation Method and apparatus for fabricating a thin film semiconductor device
US5714968A (en) * 1994-08-09 1998-02-03 Nec Corporation Current-dependent light-emitting element drive circuit for use in active matrix display device
US5766560A (en) * 1996-02-02 1998-06-16 Ozone Industries Limited Ozone generator
US5788930A (en) * 1996-08-21 1998-08-04 Mcmurray; Larry Daniel Apparatus for purifying an environment using ozone generation
US5803982A (en) * 1996-10-15 1998-09-08 Ez Environmental Solutions Corporation Pressure washing apparatus with ozone generator
US5874803A (en) * 1997-09-09 1999-02-23 The Trustees Of Princeton University Light emitting device with stack of OLEDS and phosphor downconverter
US5903248A (en) * 1997-04-11 1999-05-11 Spatialight, Inc. Active matrix display having pixel driving circuits with integrated charge pumps
US5911957A (en) * 1997-10-23 1999-06-15 Khatchatrian; Robert G. Ozone generator
US5917280A (en) * 1997-02-03 1999-06-29 The Trustees Of Princeton University Stacked organic light emitting devices
US6023259A (en) * 1997-07-11 2000-02-08 Fed Corporation OLED active matrix using a single transistor current mode pixel design
US6091203A (en) * 1998-03-31 2000-07-18 Nec Corporation Image display device with element driving device for matrix drive of multiple active elements
US6229508B1 (en) * 1997-09-29 2001-05-08 Sarnoff Corporation Active matrix light emitting diode pixel structure and concomitant method
US20010002703A1 (en) * 1999-11-30 2001-06-07 Jun Koyama Electric device
US6246180B1 (en) * 1999-01-29 2001-06-12 Nec Corporation Organic el display device having an improved image quality
US6252248B1 (en) * 1998-06-08 2001-06-26 Sanyo Electric Co., Ltd. Thin film transistor and display
US20010026257A1 (en) * 2000-03-27 2001-10-04 Hajime Kimura Electro-optical device
US20010030323A1 (en) * 2000-03-29 2001-10-18 Sony Corporation Thin film semiconductor apparatus and method for driving the same
US6307322B1 (en) * 1999-12-28 2001-10-23 Sarnoff Corporation Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage
US20010043173A1 (en) * 1997-09-04 2001-11-22 Ronald Roy Troutman Field sequential gray in active matrix led display using complementary transistor pixel circuits
US20010045929A1 (en) * 2000-01-21 2001-11-29 Prache Olivier F. Gray scale pixel driver for electronic display and method of operation therefor
US20020000576A1 (en) * 2000-06-22 2002-01-03 Kazutaka Inukai Display device
US20020011799A1 (en) * 2000-04-06 2002-01-31 Semiconductor Energy Laboratory Co., Ltd. Electronic device and driving method
US20020011796A1 (en) * 2000-05-08 2002-01-31 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, and electric device using the same
US6580408B1 (en) * 1999-06-03 2003-06-17 Lg. Philips Lcd Co., Ltd. Electro-luminescent display including a current mirror

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0990405A (en) * 1995-09-21 1997-04-04 Sharp Corp Thin-film transistor
JPH11231805A (en) * 1998-02-10 1999-08-27 Sanyo Electric Co Ltd Display device
CA2242720C (en) 1998-07-09 2000-05-16 Ibm Canada Limited-Ibm Canada Limitee Programmable led driver
JP2000231346A (en) * 1999-02-09 2000-08-22 Sanyo Electric Co Ltd Electro-luminescence display device
JP4126909B2 (en) 1999-07-14 2008-07-30 ソニー株式会社 Current drive circuit and a display device, the pixel circuit using the same, and a driving method
WO2001020591A1 (en) * 1999-09-11 2001-03-22 Koninklijke Philips Electronics N.V. Active matrix electroluminescent display device
US7248236B2 (en) * 2001-02-16 2007-07-24 Ignis Innovation Inc. Organic light emitting diode display having shield electrodes
EP1310939B1 (en) * 2001-09-28 2013-04-03 Semiconductor Energy Laboratory Co., Ltd. A light emitting device and electronic apparatus using the same
GB0130411D0 (en) * 2001-12-20 2002-02-06 Koninkl Philips Electronics Nv Active matrix electroluminescent display device
US7868856B2 (en) * 2004-08-20 2011-01-11 Koninklijke Philips Electronics N.V. Data signal driver for light emitting display
US7310077B2 (en) * 2003-09-29 2007-12-18 Michael Gillis Kane Pixel circuit for an active matrix organic light-emitting diode display

Patent Citations (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1585976A (en) * 1922-03-02 1926-05-25 Stemco Engineering Company Fluid gauge
US1544838A (en) * 1923-08-25 1925-07-07 Electric Water Sterilizer & Oz Ozone generator
US1743202A (en) * 1926-10-04 1930-01-14 Sun Maid Raisin Growers Of Cal Ozone apparatus
US2113913A (en) * 1936-02-01 1938-04-12 Wilson H Cragun Ozonator
US3607709A (en) * 1969-03-13 1971-09-21 Air And Water Purification Inc Ozone generator
US3784838A (en) * 1971-08-25 1974-01-08 Purification Sciences Inc Solid state frequency converter for corona generator
US3801791A (en) * 1971-11-15 1974-04-02 R Schaefer Ozone generator
US3883413A (en) * 1972-09-25 1975-05-13 Avco Corp Ozone generator using pulsed electron beam and decaying electric field
US4062748A (en) * 1975-09-06 1977-12-13 Pavel Imris Method and apparatus for producing ozone
US4159971A (en) * 1976-02-19 1979-07-03 Arthur Gneupel Ozone generator
US4386395A (en) * 1980-12-19 1983-05-31 Webster Electric Company, Inc. Power supply for electrostatic apparatus
US4818498A (en) * 1982-12-22 1989-04-04 Bruno Bachhofer Ozone generator employing plate-shaped high-voltage electrodes
US4996523A (en) * 1988-10-20 1991-02-26 Eastman Kodak Company Electroluminescent storage display with improved intensity driver circuits
US4970056A (en) * 1989-01-18 1990-11-13 Fusion Systems Corporation Ozone generator with improved dielectric and method of manufacture
US5047744A (en) * 1990-01-23 1991-09-10 Plasma Technics, Inc. High voltage fluid filled transformer
US5137697A (en) * 1991-05-23 1992-08-11 Quantum Electronics Corporation Ozone generator
US5124132A (en) * 1991-06-20 1992-06-23 Plasma Technics, Inc. Corona discharge ozone generator
US5258165A (en) * 1991-06-26 1993-11-02 Osmonics, Inc. Multi-tube ozone generator and method of making same
US5266515A (en) * 1992-03-02 1993-11-30 Motorola, Inc. Fabricating dual gate thin film transistors
US5417936A (en) * 1992-06-08 1995-05-23 Nippon Ozone Co., Ltd. Plate-type ozone generator
US5573733A (en) * 1992-08-11 1996-11-12 Poptec Ltee Inner electrode for an ozone generator, ozone generator containing said electrode and method of use of said ozone generator
US5313145A (en) * 1992-08-31 1994-05-17 Francis Jr Ralph M Power supply for a gas discharge device
US5554345A (en) * 1992-10-14 1996-09-10 Novozone (N.V.) Limited Ozone generation apparatus and method
US5503809A (en) * 1993-04-19 1996-04-02 John T. Towles Compact ozone generator
US5648276A (en) * 1993-05-27 1997-07-15 Sony Corporation Method and apparatus for fabricating a thin film semiconductor device
US5424893A (en) * 1994-03-11 1995-06-13 Francis, Jr.; Ralph M. Gas discharge device power supply with ground fault protection
US5714968A (en) * 1994-08-09 1998-02-03 Nec Corporation Current-dependent light-emitting element drive circuit for use in active matrix display device
US5637279A (en) * 1994-08-31 1997-06-10 Applied Science & Technology, Inc. Ozone and other reactive gas generator cell and system
US5498880A (en) * 1995-01-12 1996-03-12 E. I. Du Pont De Nemours And Company Image capture panel using a solid state device
US5619033A (en) * 1995-06-07 1997-04-08 Xerox Corporation Layered solid state photodiode sensor array
US5766560A (en) * 1996-02-02 1998-06-16 Ozone Industries Limited Ozone generator
US5788930A (en) * 1996-08-21 1998-08-04 Mcmurray; Larry Daniel Apparatus for purifying an environment using ozone generation
US5803982A (en) * 1996-10-15 1998-09-08 Ez Environmental Solutions Corporation Pressure washing apparatus with ozone generator
US5917280A (en) * 1997-02-03 1999-06-29 The Trustees Of Princeton University Stacked organic light emitting devices
US5903248A (en) * 1997-04-11 1999-05-11 Spatialight, Inc. Active matrix display having pixel driving circuits with integrated charge pumps
US6023259A (en) * 1997-07-11 2000-02-08 Fed Corporation OLED active matrix using a single transistor current mode pixel design
US20010043173A1 (en) * 1997-09-04 2001-11-22 Ronald Roy Troutman Field sequential gray in active matrix led display using complementary transistor pixel circuits
US5874803A (en) * 1997-09-09 1999-02-23 The Trustees Of Princeton University Light emitting device with stack of OLEDS and phosphor downconverter
US6229508B1 (en) * 1997-09-29 2001-05-08 Sarnoff Corporation Active matrix light emitting diode pixel structure and concomitant method
US5911957A (en) * 1997-10-23 1999-06-15 Khatchatrian; Robert G. Ozone generator
US6091203A (en) * 1998-03-31 2000-07-18 Nec Corporation Image display device with element driving device for matrix drive of multiple active elements
US6252248B1 (en) * 1998-06-08 2001-06-26 Sanyo Electric Co., Ltd. Thin film transistor and display
US6246180B1 (en) * 1999-01-29 2001-06-12 Nec Corporation Organic el display device having an improved image quality
US6580408B1 (en) * 1999-06-03 2003-06-17 Lg. Philips Lcd Co., Ltd. Electro-luminescent display including a current mirror
US20010002703A1 (en) * 1999-11-30 2001-06-07 Jun Koyama Electric device
US6307322B1 (en) * 1999-12-28 2001-10-23 Sarnoff Corporation Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage
US20010045929A1 (en) * 2000-01-21 2001-11-29 Prache Olivier F. Gray scale pixel driver for electronic display and method of operation therefor
US20010026257A1 (en) * 2000-03-27 2001-10-04 Hajime Kimura Electro-optical device
US20010030323A1 (en) * 2000-03-29 2001-10-18 Sony Corporation Thin film semiconductor apparatus and method for driving the same
US20020011799A1 (en) * 2000-04-06 2002-01-31 Semiconductor Energy Laboratory Co., Ltd. Electronic device and driving method
US20020011796A1 (en) * 2000-05-08 2002-01-31 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, and electric device using the same
US20020000576A1 (en) * 2000-06-22 2002-01-03 Kazutaka Inukai Display device

Cited By (114)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8890220B2 (en) 2001-02-16 2014-11-18 Ignis Innovation, Inc. Pixel driver circuit and pixel circuit having control circuit coupled to supply voltage
US8664644B2 (en) 2001-02-16 2014-03-04 Ignis Innovation Inc. Pixel driver circuit and pixel circuit having the pixel driver circuit
US9886895B2 (en) 2001-02-21 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
US20080197777A1 (en) * 2001-02-21 2008-08-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
US8120557B2 (en) 2001-02-21 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
US9431466B2 (en) 2001-02-21 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
US8780018B2 (en) 2001-02-21 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
US9040996B2 (en) 2001-02-21 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
US20100201721A1 (en) * 2001-02-21 2010-08-12 Semiconductor Energy Laboratory Co., Ltd. Light Emitting Device and Electronic Appliance
US7719498B2 (en) 2001-02-21 2010-05-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
US8610117B2 (en) 2001-02-26 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic equipment
US20110084281A1 (en) * 2001-02-26 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic equipment
US8071982B2 (en) 2001-02-26 2011-12-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic equipment
US8314427B2 (en) 2001-02-26 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic equipment
US20070166843A1 (en) * 2001-06-01 2007-07-19 Semiconductor Energy Laboratory Co., Ltd. Method of repairing a light-emitting device and method of manufacturing a light-emitting device
US8519392B2 (en) 2001-09-21 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method of light emitting device and electronic device
US9847381B2 (en) 2001-09-21 2017-12-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method of light emitting device and electronic device
US8227807B2 (en) 2001-09-21 2012-07-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method of light emitting device and electronic device
US9876062B2 (en) 2001-09-21 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method of light emitting device and electronic device
US9876063B2 (en) 2001-09-21 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method of light emitting device and electronic device
US9165952B2 (en) 2001-09-21 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method of light emitting device and electronic device
US9368527B2 (en) 2001-09-21 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method of light emitting device and electronic device
US20100328299A1 (en) * 2001-09-21 2010-12-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method of light emitting device and electronic device
US8895983B2 (en) 2001-09-21 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method of light emitting device and electronic device
US10068953B2 (en) 2001-09-21 2018-09-04 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method of light emitting device and electronic device
US20080090620A1 (en) * 2002-11-27 2008-04-17 Semiconductor Energy Laboratory Co., Ltd. Display Device and Electronic Device
US7592984B2 (en) * 2002-11-27 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US7403177B2 (en) * 2002-11-29 2008-07-22 Semiconductor Energy Laboratory Co., Ltd. Display device, driving method thereof, and electronic apparatus
US20040263499A1 (en) * 2002-11-29 2004-12-30 Yoshifumi Tanada Display device, driving method thereof, and electronic apparatus
US20040150593A1 (en) * 2003-01-31 2004-08-05 Wen-Cheng Yen Active matrix LED display driving circuit
US6975293B2 (en) * 2003-01-31 2005-12-13 Faraday Technology Corp. Active matrix LED display driving circuit
US20040183758A1 (en) * 2003-03-21 2004-09-23 Industrial Technology Research Institute Pixel circuit for active matrix OLED and driving method
US7023408B2 (en) * 2003-03-21 2006-04-04 Industrial Technology Research Institute Pixel circuit for active matrix OLED and driving method
US9472138B2 (en) 2003-09-23 2016-10-18 Ignis Innovation Inc. Pixel driver circuit with load-balance in current mirror circuit
USRE45291E1 (en) 2004-06-29 2014-12-16 Ignis Innovation Inc. Voltage-programming scheme for current-driven AMOLED displays
CN1770247B (en) 2004-09-21 2011-12-28 卡西欧计算机株式会社 And display device driving circuit
US20060061526A1 (en) * 2004-09-21 2006-03-23 Casio Computer Co., Ltd. Drive circuit and display apparatus
US7532187B2 (en) * 2004-09-28 2009-05-12 Sharp Laboratories Of America, Inc. Dual-gate transistor display
US20060066512A1 (en) * 2004-09-28 2006-03-30 Sharp Laboratories Of America, Inc. Dual-gate transistor display
US8319712B2 (en) 2004-11-16 2012-11-27 Ignis Innovation Inc. System and driving method for active matrix light emitting device display
US20110134094A1 (en) * 2004-11-16 2011-06-09 Ignis Innovation Inc. System and driving method for active matrix light emitting device display
US8314783B2 (en) 2004-12-01 2012-11-20 Ignis Innovation Inc. Method and system for calibrating a light emitting device display
US20060149493A1 (en) * 2004-12-01 2006-07-06 Sanjiv Sambandan Method and system for calibrating a light emitting device display
US7317434B2 (en) 2004-12-03 2008-01-08 Dupont Displays, Inc. Circuits including switches for electronic devices and methods of using the electronic devices
US20060118869A1 (en) * 2004-12-03 2006-06-08 Je-Hsiung Lan Thin-film transistors and processes for forming the same
US20060119548A1 (en) * 2004-12-03 2006-06-08 Je-Hsiung Lan Circuits including switches for electronic devices and methods of using the electronic devices
US9741292B2 (en) 2004-12-07 2017-08-22 Ignis Innovation Inc. Method and system for programming and driving active matrix light emitting device pixel having a controllable supply voltage
US9153172B2 (en) 2004-12-07 2015-10-06 Ignis Innovation Inc. Method and system for programming and driving active matrix light emitting device pixel having a controllable supply voltage
US9373645B2 (en) 2005-01-28 2016-06-21 Ignis Innovation Inc. Voltage programmed pixel circuit, display system and driving method thereof
US8659518B2 (en) 2005-01-28 2014-02-25 Ignis Innovation Inc. Voltage programmed pixel circuit, display system and driving method thereof
US9728135B2 (en) 2005-01-28 2017-08-08 Ignis Innovation Inc. Voltage programmed pixel circuit, display system and driving method thereof
US9330598B2 (en) 2005-06-08 2016-05-03 Ignis Innovation Inc. Method and system for driving a light emitting device display
US7852298B2 (en) 2005-06-08 2010-12-14 Ignis Innovation Inc. Method and system for driving a light emitting device display
US8860636B2 (en) 2005-06-08 2014-10-14 Ignis Innovation Inc. Method and system for driving a light emitting device display
US20060290614A1 (en) * 2005-06-08 2006-12-28 Arokia Nathan Method and system for driving a light emitting device display
US9805653B2 (en) 2005-06-08 2017-10-31 Ignis Innovation Inc. Method and system for driving a light emitting device display
US7830084B2 (en) * 2005-09-30 2010-11-09 Casio Computer Co., Ltd. Display panel
US20070075638A1 (en) * 2005-09-30 2007-04-05 Casio Computer Co., Ltd Display panel
US20070090459A1 (en) * 2005-10-26 2007-04-26 Motorola, Inc. Multiple gate printed transistor method and apparatus
US9489891B2 (en) 2006-01-09 2016-11-08 Ignis Innovation Inc. Method and system for driving an active matrix display circuit
US9058775B2 (en) 2006-01-09 2015-06-16 Ignis Innovation Inc. Method and system for driving an active matrix display circuit
US9269322B2 (en) 2006-01-09 2016-02-23 Ignis Innovation Inc. Method and system for driving an active matrix display circuit
WO2007120474A2 (en) * 2006-04-10 2007-10-25 Emagin Corporation Auto-calibrating gamma correction circuit for amoled pixel display drive
WO2007120474A3 (en) * 2006-04-10 2008-04-24 Emagin Corp Auto-calibrating gamma correction circuit for amoled pixel display drive
US9633597B2 (en) 2006-04-19 2017-04-25 Ignis Innovation Inc. Stable driving scheme for active matrix displays
US8743096B2 (en) 2006-04-19 2014-06-03 Ignis Innovation, Inc. Stable driving scheme for active matrix displays
US9877371B2 (en) 2008-04-18 2018-01-23 Ignis Innovations Inc. System and driving method for light emitting device display
US20100039458A1 (en) * 2008-04-18 2010-02-18 Ignis Innovation Inc. System and driving method for light emitting device display
US9867257B2 (en) 2008-04-18 2018-01-09 Ignis Innovation Inc. System and driving method for light emitting device display
US8614652B2 (en) 2008-04-18 2013-12-24 Ignis Innovation Inc. System and driving method for light emitting device display
USRE46561E1 (en) 2008-07-29 2017-09-26 Ignis Innovation Inc. Method and system for driving light emitting display
US9370075B2 (en) 2008-12-09 2016-06-14 Ignis Innovation Inc. System and method for fast compensation programming of pixels in a display
US9824632B2 (en) 2008-12-09 2017-11-21 Ignis Innovation Inc. Systems and method for fast compensation programming of pixels in a display
US8508542B2 (en) 2009-03-06 2013-08-13 Apple Inc. Systems and methods for operating a display
US8854294B2 (en) 2009-03-06 2014-10-07 Apple Inc. Circuitry for independent gamma adjustment points
US20100225657A1 (en) * 2009-03-06 2010-09-09 Sakariya Kapil V Systems and methods for operating a display
US20100225571A1 (en) * 2009-03-06 2010-09-09 Sakariya Kapil V Circuitry for independent gamma adjustment points
US20130328044A1 (en) * 2009-07-03 2013-12-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9030506B2 (en) 2009-11-12 2015-05-12 Ignis Innovation Inc. Stable fast programming scheme for displays
US9818376B2 (en) 2009-11-12 2017-11-14 Ignis Innovation Inc. Stable fast programming scheme for displays
US9093028B2 (en) 2009-12-06 2015-07-28 Ignis Innovation Inc. System and methods for power conservation for AMOLED pixel drivers
US9262965B2 (en) 2009-12-06 2016-02-16 Ignis Innovation Inc. System and methods for power conservation for AMOLED pixel drivers
US8994617B2 (en) 2010-03-17 2015-03-31 Ignis Innovation Inc. Lifetime uniformity parameter extraction methods
US8717259B2 (en) * 2010-12-28 2014-05-06 Samsung Display Co., Ltd. Organic light emitting display device, driving method thereof, and manufacturing method thereof
US20120162275A1 (en) * 2010-12-28 2012-06-28 Samsung Mobile Display Co., Ltd. Organic light emitting display device, driving method thereof, and manufacturing method thereof
US9501978B2 (en) 2010-12-28 2016-11-22 Samsung Display Co., Ltd. Organic light emitting display device, driving method thereof, and manufacturing method thereof
US9606607B2 (en) 2011-05-17 2017-03-28 Ignis Innovation Inc. Systems and methods for display systems with dynamic power control
US9134825B2 (en) 2011-05-17 2015-09-15 Ignis Innovation Inc. Systems and methods for display systems with dynamic power control
US9886899B2 (en) 2011-05-17 2018-02-06 Ignis Innovation Inc. Pixel Circuits for AMOLED displays
US9881587B2 (en) 2011-05-28 2018-01-30 Ignis Innovation Inc. Systems and methods for operating pixels in a display to mitigate image flicker
US8901579B2 (en) 2011-08-03 2014-12-02 Ignis Innovation Inc. Organic light emitting diode and method of manufacturing
US9224954B2 (en) 2011-08-03 2015-12-29 Ignis Innovation Inc. Organic light emitting diode and method of manufacturing
US9070775B2 (en) 2011-08-03 2015-06-30 Ignis Innovations Inc. Thin film transistor
US9818806B2 (en) 2011-11-29 2017-11-14 Ignis Innovation Inc. Multi-functional active matrix organic light-emitting diode display
US9385169B2 (en) 2011-11-29 2016-07-05 Ignis Innovation Inc. Multi-functional active matrix organic light-emitting diode display
US9978310B2 (en) 2012-12-11 2018-05-22 Ignis Innovation Inc. Pixel circuits for amoled displays
US9997106B2 (en) 2012-12-11 2018-06-12 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9685114B2 (en) 2012-12-11 2017-06-20 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9786223B2 (en) 2012-12-11 2017-10-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9336717B2 (en) 2012-12-11 2016-05-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US10013915B2 (en) 2013-03-08 2018-07-03 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9922596B2 (en) 2013-03-08 2018-03-20 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9934725B2 (en) 2013-03-08 2018-04-03 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9351368B2 (en) 2013-03-08 2016-05-24 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9721505B2 (en) 2013-03-08 2017-08-01 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9697771B2 (en) 2013-03-08 2017-07-04 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9659527B2 (en) 2013-03-08 2017-05-23 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9952698B2 (en) 2013-03-15 2018-04-24 Ignis Innovation Inc. Dynamic adjustment of touch resolutions on an AMOLED display
US9754971B2 (en) 2013-05-18 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9831462B2 (en) 2013-12-25 2017-11-28 Ignis Innovation Inc. Electrode contacts
US9502653B2 (en) 2013-12-25 2016-11-22 Ignis Innovation Inc. Electrode contacts
US20160293083A1 (en) * 2014-09-19 2016-10-06 Boe Technology Group Co., Ltd. Organic light emitting display device, driving method thereof and display apparatus
US9842889B2 (en) 2014-11-28 2017-12-12 Ignis Innovation Inc. High pixel density array architecture
CN105932032A (en) * 2016-06-16 2016-09-07 深圳市华星光电技术有限公司 Array substrate and preparation method therefor

Also Published As

Publication number Publication date Type
WO2002067327A2 (en) 2002-08-29 application
JP2004531751A (en) 2004-10-14 application
EP1488454B1 (en) 2013-01-16 grant
WO2002067327A3 (en) 2004-05-21 application
JP4383743B2 (en) 2009-12-16 grant
US7414600B2 (en) 2008-08-19 grant
EP2180508A2 (en) 2010-04-28 application
EP2180508A3 (en) 2012-04-25 application
US20060027807A1 (en) 2006-02-09 application
EP1488454A2 (en) 2004-12-22 application

Similar Documents

Publication Publication Date Title
US6753655B2 (en) Pixel structure for an active matrix OLED
US7889159B2 (en) System and driving method for active matrix light emitting device display
US7760162B2 (en) Unit circuit, electronic circuit, electronic apparatus, electro-optic apparatus, driving method, and electronic equipment which can compensate for variations in characteristics of transistors to drive current-type driven elements
US6937215B2 (en) Pixel driving circuit of an organic light emitting diode display panel
US7230591B2 (en) Display device and method of driving the same
US6542137B2 (en) Display device
US20070085847A1 (en) Display device and driving method thereof
US6724151B2 (en) Apparatus and method of driving electro luminescence panel
US20090051674A1 (en) Display device and driving method thereof, semiconductor device, and electronic apparatus
US20030137503A1 (en) Semiconductor device and method of driving the semiconductor device
US6919868B2 (en) Circuit, driver circuit, electro-optical device, organic electroluminescent display device electronic apparatus, method of controlling the current supply to a current driven element, and method for driving a circuit
US6307322B1 (en) Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage
US7038392B2 (en) Active-matrix light emitting display and method for obtaining threshold voltage compensation for same
US20070241999A1 (en) Systems for displaying images involving reduced mura
US20060061526A1 (en) Drive circuit and display apparatus
US6873116B2 (en) Light emitting device
US20060176250A1 (en) Method and system for programming and driving active matrix light emitting devcie pixel
US20060238135A1 (en) Semiconductor device and display device
US20040090400A1 (en) Data driving apparatus and method of driving organic electro luminescence display panel
US7345657B2 (en) Semiconductor device and display device utilizing the same
US20050157581A1 (en) Display device, data driving circuit, and display panel driving method
US20050259051A1 (en) Display device and driving method thereof
US20070279337A1 (en) Organic light-emitting diode display device and driving method thereof
US20070182671A1 (en) Pixel driver circuit
US20070040769A1 (en) Active matrix organic light emitting diodes pixel circuit

Legal Events

Date Code Title Description
AS Assignment

Owner name: IGNIS INNOVATION INC., CANADA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:NATHAN, AROKIA;SERVATI, PEYMAN;SAKARIYA, KAPIL;AND OTHERS;REEL/FRAME:016772/0380

Effective date: 20040520