JP2953465B1 - Constant current drive circuit - Google Patents

Constant current drive circuit

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Publication number
JP2953465B1
JP2953465B1 JP10229650A JP22965098A JP2953465B1 JP 2953465 B1 JP2953465 B1 JP 2953465B1 JP 10229650 A JP10229650 A JP 10229650A JP 22965098 A JP22965098 A JP 22965098A JP 2953465 B1 JP2953465 B1 JP 2953465B1
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JP
Japan
Prior art keywords
transistor
gate
constant current
switching transistor
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP10229650A
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Japanese (ja)
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JP2000056847A (en
Inventor
茂夫 西鳥羽
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日本電気株式会社
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Priority to JP10229650A priority Critical patent/JP2953465B1/en
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Publication of JP2953465B1 publication Critical patent/JP2953465B1/en
Publication of JP2000056847A publication Critical patent/JP2000056847A/en
Expired - Lifetime legal-status Critical Current

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Abstract

To provide a constant current driving circuit capable of supplying a constant current according to an input signal without increasing cost. A resistor is connected to an input terminal.
Further, a transistor 4 having a drain and a gate connected to the resistor 3 is provided. Further, a switching transistor 6 having one end connected to the drain and the gate of the transistor 4 is provided. The gate of the switching transistor 6 is connected to the control terminal 2 to which an address signal for controlling conduction / interruption of the switching transistor 6 is input. The other end of the switching transistor 6 is connected to one electrode of a charge storage capacitor 7. The other electrode of the charge storage capacitor 7 is connected to the ground terminal 11. Further, a transistor 5 having a gate connected to the other end of the switching transistor 6 is provided. A load 8 is connected to the drain of the transistor 5.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a constant current driving circuit suitable for an active matrix type organic electroluminescent device and the like, and more particularly to a constant current driving circuit for improving the matching of a built-in current mirror circuit. .

[0002]

2. Description of the Related Art Conventionally, a constant current drive circuit has been used for an active matrix type organic electroluminescent (EL) element or the like. FIG. 7 is a circuit diagram showing a conventional constant current drive circuit.

In a conventional constant current drive circuit, a resistor 103 is connected to an input terminal 101. The resistance 1
Transistor 1 whose drain and gate are connected to 03
04 is provided. The drain of the switching transistor 106 is connected to the source of the transistor 104. The gate of the switching transistor 106 is connected to a control terminal 102 to which an address signal for controlling ON / OFF of the switching transistor 106 is input. The source of the switching transistor 106 is connected to a ground terminal 111. Is connected.

[0004] One electrode of a charge storage capacitor 107 is connected to the drain and gate of the transistor 104. The other electrode of the charge storage capacitor 107 is connected to the ground terminal 111. Further, a transistor 105 whose gate is connected to the drain and the gate of the transistor 104 is provided. Transistor 1
The source of 05 is connected to the ground terminal 111. The load 108 is connected to the drain of the transistor 105. The load 108 is, for example, an organic EL element requiring constant current driving. The power supply terminal 110 is connected to the load 108. The conventional constant current drive circuit configured as described above includes a current mirror circuit including transistors 104 and 105.

Then, a current flows through the resistor 103 in accordance with the voltage of the signal input to the input terminal 101. At this time,
When the switching transistor 106 is on, a current proportional to the current flowing through the resistor 103 flows through the transistor 105 as a drain current, and the current also flows through the load 108. On the other hand, when the switching transistor 106 is in the cutoff state, no drain current flows through the transistor 105, and thus no current flows through the load 108. In this way, the conduction / interruption of the constant current flowing through the load 108 is controlled.

[0006]

However, in the above-described conventional constant current drive circuit, the matching of the current mirror circuit deteriorates due to the voltage drop due to the on-resistance and the source current of the switching transistor 106, and the load 10
8 has a problem that a constant current corresponding to the signal level of the input terminal 101 is not supplied.

In order to prevent this, it is conceivable to increase the size of the switching transistor 106 to reduce its on-resistance. However, when this is to be implemented by a semiconductor integrated circuit, the chip size increases. This leads to an increase in cost. In addition, for example, when a thin film transistor (TFT) is used as a driving circuit of an organic EL element, a large size is required for a switching transistor, so that the pixel occupancy is reduced, the aperture ratio is reduced, and the luminance is reduced. . In this case, it is necessary to take measures such as increasing the constant current value in order to raise the luminance to the normal use level, which is against the recent power saving.

The present invention has been made in view of the above problems, and has as its object to provide a constant current driving circuit capable of supplying a constant current corresponding to an input signal without increasing cost. And

[0009]

A constant current drive circuit according to the present invention comprises an input terminal, a first transistor having a drain connected to the input terminal and a source connected to the ground, A switching transistor connected to the gate and the drain, a control terminal connected to the gate of the switching transistor, to which a signal for switching between conduction and non-conduction of the switching transistor is input, and a gate connected to the switching transistor A second transistor having a source connected to ground and forming a current mirror circuit together with the first transistor, and a capacitive element having one electrode connected to the gate of the second transistor and the other electrode connected to ground. And the following.

The conductivity type of the channel of the first and second transistors is different from the conductivity type of the channel of the switching transistor, and the conductivity type of the channel connected between the source of the first transistor and ground is different. A first level shifting diode, a second level shifting diode connected between the source of the second transistor and ground,
May be provided.

[0011] The conductivity type of the channel of the first and second transistors may be the same as the conductivity type of the channel of the switching transistor.

Another constant current driving circuit according to the present invention comprises an input terminal, a first transistor having a drain connected to the input terminal and a source connected to ground, a gate and a drain of the first transistor. A control terminal connected to the gate of the switching transistor, to which a signal for switching between conduction and non-conduction of the switching transistor is input; and a gate connected to the gate of the first transistor. And a second transistor having a source connected to the ground and forming a current mirror circuit together with the first transistor;
And a capacitor in which one electrode is connected to the gate of the transistor and the other electrode is connected to the ground.

[0013] A resistor may be connected between the input terminal and the drain of the first transistor.

[0014] The semiconductor device may further include a source follower transistor connected between the input terminal and the resistor.

Further, the drain of the second transistor can be connected to an organic electroluminescent device.

According to the present invention, even when the switching transistor is turned off, the constant current is continuously supplied by the electric charge accumulated in the capacitor provided between the gate of the second transistor and the ground. Can be. The voltage drop due to the on-resistance of the switching transistor is so small as to be negligible. Therefore, the matching of the current mirror circuit is significantly improved.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a constant current drive circuit according to an embodiment of the present invention will be specifically described with reference to the accompanying drawings. FIG. 1 is a circuit diagram showing a constant current drive circuit according to a first embodiment of the present invention.

In the constant current drive circuit of the present embodiment, a resistor 3 is connected to the input terminal 1. Further, an N-channel MOS transistor 4 having a drain and a gate connected to the resistor 3 is provided. The ground terminal 11 is connected to the source of the transistor 4. Further, a switching transistor 6 which is a P-channel MOS transistor having one end connected to the drain and the gate of the transistor 4 is provided. The control terminal 2 to which an address signal for controlling conduction / interruption (non-conduction) of the switching transistor 6 is input is connected to the gate of the switching transistor 6.

The other end of the switching transistor 6 is connected to one electrode of a charge holding capacitance element 7 as charge holding means. The other electrode of the charge storage capacitor 7 is connected to the ground terminal 11. Further, an N-channel MOS transistor 5 having a gate connected to the other end of the switching transistor 6 is provided. The source of the transistor 5 is connected to the ground terminal 11. A load 8 is connected to the drain of the transistor 5. The load 8 is, for example, an active matrix type organic electroluminescent (E) that requires constant current driving.
L: Electro-Luminescent element. The power supply terminal 10 is connected to the load 8. The constant current drive circuit according to the present embodiment thus configured includes a current mirror circuit including the transistors 4 and 5.

Next, the operation of the constant current driving circuit of the present embodiment configured as described above will be described.

When an input signal such as an image signal is input to the input terminal 1, a current flows through the resistor 3 according to the voltage of the signal. Then, the current flowing through the resistor 3 flows through the transistor 4 whose drain and source are connected to each other, and a gate-source voltage is generated in the transistor 4.

When the address signal input to the control terminal 2 is at a low level and the switching transistor 6 is conductive, the gate-source voltage generated in the transistor 4 is charged through the switching transistor 6. The voltage is applied to the capacitor 7 and the gate of the transistor 5. At this time, since the transistors 4 and 5 form a current mirror circuit, a current proportional to the current flowing through the resistor 3 flows as the drain current of the transistor 5.
In other words, a current determined by the pattern size ratio between the transistor 4 and the transistor 5, for example, when the transistors 4 and 5 are configured with the same pattern size, a current equal to the current flowing through the resistor 3
Flows between the drain and the source of the device. As a result, the load 8 is driven.

Next, when the address signal input to the control terminal 2 is at a high level and the switching transistor 6 is turned off, the current mirror circuit composed of the transistors 4 and 5 is also turned off. However, when the switching transistor 6 is conducting, a current corresponding to the signal voltage of the input terminal 1 flows through the transistor 4, and a gate-source voltage of the transistor 4 corresponding to the current is applied to the charge holding capacitor 7. ing. Therefore, the switching transistor 6
Since the voltage is applied to the gate of the transistor 5 even after the current is cut off, a current corresponding to the gate voltage is supplied to the load 8. That is, even when the switching transistor 6 is turned off, a current corresponding to the signal voltage of the input terminal 1 is continuously supplied to the load 8.

Therefore, when the present embodiment is applied to a drive circuit of an active matrix type organic EL element, an input image signal is input to the input terminal 1 and the emission luminance changes according to the gradation data. Further, an address signal is input to the control terminal 2, a pixel corresponding to the image signal from the input terminal 1 is selectively read into the charge holding capacitor 7, and the charge is held until the next new image signal is input. The pixel continues to emit light.

As described above, according to the present embodiment, the voltage drop due to the on-resistance of the switching transistor 6 can be ignored, so that the matching of the current mirror circuit is improved.

When a switching element is provided in a large current path as in the prior art, it is necessary to increase the element size in order to reduce the on-resistance. However, in this embodiment, the element flows through the switching transistor 6. Since the current is so small as to be negligible, it can be constituted by a transistor having a minimum size. Therefore, even when it is applied to a semiconductor integrated circuit, it is inexpensive.

Further, even when a thin film transistor (TFT) is used as a driving circuit of the organic EL, a large switching transistor is not required, so that it is possible to improve the aperture ratio of the pixel and the luminance of the organic EL. It is. In the case where the transistors 4 and 5 forming a current mirror circuit are formed using thin film transistors, the transistors 4 and 5 can be arranged adjacent to each other, so that variations in transistor parameters due to manufacturing are suppressed to a low level. Can be. Therefore, the matching of the current mirror circuit including the transistors 4 and 5 is improved.

Next, a second embodiment of the present invention will be described. In this embodiment, a transistor having a diode structure for level shifting is provided. FIG. 2 is a circuit diagram showing a constant current drive circuit according to a second embodiment of the present invention. In the second embodiment shown in FIG. 2, the same components as those in the first embodiment shown in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

In the constant current driving circuit according to the present embodiment, the drain is connected to the source of the transistor 4 and the ground terminal 11
An N-channel MOS transistor 12 having a diode structure with a source connected to the source is provided. Further, the drain is connected to the source of the transistor 5 and the ground terminal 11
Is provided with an N-channel MOS transistor 13 having a diode structure.

In the first embodiment, the current mirror circuit is composed of two N-channel MOS transistors, and the P-channel MOS transistor is used as the switching transistor.
The ON voltage of the channel MOS transistor is N channel M
When the ON voltage of the OS transistor is higher than that of the OS transistor, the voltage of the control terminal 2 needs to be lower than the voltage of the ground terminal 11 in order to make the switching transistor 6 conductive.

In the second embodiment as well, the voltage of the control terminal 2 needs to be lower than the voltage of the ground terminal 11, but since the transistors 12 and 13 are provided for level shifting, it can be easily adapted. Is possible.

In this case, in order to ensure the matching of the current mirror circuit, the transistors 12 and 13 need to have the same conductivity type, that is, the same channel conductivity type. In the present embodiment, an N-channel MOS transistor is used, but the same effect can be obtained by using a P-channel MOS transistor.

Also in the first embodiment, there is no problem if the ON voltages of the N-channel MOS transistor and the P-channel MOS transistor are equal.

Next, a third embodiment of the present invention will be described. In the present embodiment, the conduction type of the switching transistor is the same as that of the transistor constituting the current mirror circuit. FIG. 3 shows a third embodiment of the present invention.
FIG. 4 is a schematic diagram showing a constant current drive circuit according to the example of FIG. In the third embodiment shown in FIG. 3, the same components as those in the first embodiment shown in FIG. 1 are denoted by the same reference numerals, and a detailed description thereof will be omitted.

In the constant current driving circuit according to the present embodiment, a switching transistor 16 which is an N-channel MOS transistor is connected between the gate of the transistor 4 and the gate of the transistor 5.

In this embodiment thus constructed, even if the on-voltages of the switching transistor 16 and the transistors 4 and 5 constituting the current mirror circuit are different, the voltage of the control terminal 2 is changed to the ground terminal 11. It is no longer necessary to set the voltage to or below.

In the first embodiment, the current mirror circuit is activated when the address signal is at a low level. In the third embodiment, the current mirror circuit is activated when the address signal is at a high level. It is in the operating state.

Next, a fourth embodiment of the present invention will be described. In the present embodiment, the switching transistor is connected not between the gates of the transistors constituting the current mirror circuit but between the gate and the drain of the transistor connected to the input terminal side. FIG. 4 is a circuit diagram showing a constant current driving circuit according to a fourth embodiment of the present invention. In the fourth embodiment shown in FIG. 4, the same components as those in the first embodiment shown in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

In this embodiment, the gate of the transistor 4 and the gate of the transistor 5 are directly connected. A switching transistor 26, which is an N-channel MOS transistor, is connected between the gate and the drain of the transistor 4.

In this embodiment, the switching transistor 26 is connected not between the gates of the transistors 4 and 5 constituting the current mirror circuit but between the gate and the drain of the transistor 4. Therefore, the deterioration of the matching of the current mirror circuit due to the voltage drop due to the on-resistance of the switching transistor 26 is completely prevented.

In the fourth embodiment, when the control terminal 2 is at the low level and the current mirror circuit is turned off, the switching transistor 26 is turned off. Therefore, even when the input terminal 1 is at a high level, the transistor 4 is cut off, so that no current flows through the path between the resistor 3 and the transistor 4, and power consumption is reduced. Therefore, when the present embodiment is applied to, for example, a driving circuit of an image display device using an organic EL element or the like, since a plurality of organic EL elements are arranged vertically and horizontally in the image display device, remarkable power saving is achieved. Can be expected.

Next, a fifth embodiment of the present invention will be described. In this embodiment, a source follower transistor is connected between the input terminal and the resistor. FIG. 5 is a circuit diagram showing a constant current drive circuit according to a fifth embodiment of the present invention. In the fifth embodiment shown in FIG. 5, the same components as those in the first embodiment shown in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

In this embodiment, a source follower transistor 9 which is an N-channel MOS transistor whose gate is connected to the input terminal 1 is provided, one end of which is connected to the resistor 3 and the other end is connected to the power supply terminal 10. ing. A switching transistor 36 is connected between the gates of the transistors 4 and 5. The switching transistor 36 may be an N-channel MOS transistor or a P-channel MOS transistor.

In the present embodiment configured as described above, the transistor 4 constituting the current mirror circuit can be sufficiently driven by the source follower transistor 9 even if the impedance on the input terminal 1 side is high. .

In the first embodiment, when the input terminal 1 is at a low level and the impedance is low, the electric charge stored in the charge holding capacitor 7 is used when the switching transistor 6 is in the cut-off state. Transistor 6
In some cases, the function of retaining charges may not be sufficient due to the discharge through the path between the off-resistance and the resistance 3, but the fifth embodiment is provided with the transistor 9, so that the discharge of the charges is prevented. You.

Next, a sixth embodiment of the present invention will be described. This embodiment is a combination of the fourth embodiment and the fifth embodiment. FIG. 6 is a circuit diagram showing a constant current drive circuit according to a sixth embodiment of the present invention. In the sixth embodiment shown in FIG. 6, the same components as those in the fourth embodiment shown in FIG. 4 or the fifth embodiment shown in FIG. Is omitted.

In this embodiment, the gate of the transistor 4 and the gate of the transistor 5 are directly connected. A switching transistor 26, which is an N-channel MOS transistor, is connected between the gate and the drain of the transistor 4. Further, in this embodiment, a source follower transistor 9 which is an N-channel MOS transistor having a gate connected to the input terminal 1 is provided.
It is connected to the.

In the present embodiment having such a configuration, both effects of the fourth and fifth embodiments can be obtained. That is, the consistency of the rent mirror circuit is improved. Further, the drivability of the transistor 4 constituting the current mirror circuit and the discharge characteristics of the charge storage capacitor 7 are improved.
Further, when the input terminal 1 is at the high level, the control terminal 2 is at the low level, and the current mirror circuit is in the cut-off state, the resistance 3
And the current path of the transistor 4 is cut off,
There is also a power saving effect.

The combination of the various embodiments described above is not limited to the combination shown in the sixth embodiment. For example, the fifth embodiment may be combined with the second or third embodiment.

[0050]

As described in detail above, according to the present invention,
Since the voltage drop due to the on-resistance of the switching transistor can be neglected, the matching of the current mirror circuit can be improved. Further, the current flowing through the switching transistor becomes so small as to be negligible. Therefore, the size of the switching transistor can be reduced, and even when a semiconductor integrated circuit is used, an increase in cost can be suppressed. Furthermore, in the case where various transistors are thin film transistors and applied to a driving circuit of an organic electroluminescent element, a large switching transistor is not required, so that an aperture ratio of a pixel can be improved and luminance can be improved.

[Brief description of the drawings]

FIG. 1 is a circuit diagram showing a constant current drive circuit according to a first example of the present invention.

FIG. 2 is a circuit diagram showing a constant current drive circuit according to a second embodiment of the present invention.

FIG. 3 is a schematic diagram showing a constant current drive circuit according to a third embodiment of the present invention.

FIG. 4 is a circuit diagram showing a constant current drive circuit according to a fourth embodiment of the present invention.

FIG. 5 is a circuit diagram showing a constant current drive circuit according to a fifth embodiment of the present invention.

FIG. 6 is a circuit diagram showing a constant current drive circuit according to a sixth embodiment of the present invention.

FIG. 7 is a circuit diagram showing a conventional constant current drive circuit.

[Explanation of symbols]

1, 101; input terminal 2, 102; control terminal 3, 103; resistor 4, 5, 6, 9, 12, 13, 16, 26, 36, 10
4, 105, 106; transistors 7, 107; capacitive elements 8, 108; loads 10, 110; power supply terminals 11, 111;

Claims (7)

(57) [Claims]
1. An input terminal, a first transistor having a drain connected to the input terminal and a source connected to ground, a switching transistor connected to a gate and a drain of the first transistor, and a switch A control terminal connected to the gate of the switching transistor, to which a signal for switching between conduction and non-conduction of the switching transistor is inputted; and a gate connected to the switching transistor, a source connected to ground, and a current together with the first transistor. A constant current drive circuit, comprising: a second transistor forming a mirror circuit; and a capacitor having one electrode connected to the gate of the second transistor and the other electrode connected to the ground.
2. The channel of the first and second transistors has a conductivity type different from that of the channel of the switching transistor, and a channel connected between a source of the first transistor and ground. 2. The constant current drive circuit according to claim 1, further comprising: a first level shift diode; and a second level shift diode connected between a source of the second transistor and ground. .
3. The constant current drive circuit according to claim 1, wherein the conductivity type of the channel of the first and second transistors is the same as the conductivity type of the channel of the switching transistor.
4. An input terminal, a first transistor having a drain connected to the input terminal and a source connected to ground, and a switching transistor connected between a gate and a drain of the first transistor. A control terminal connected to the gate of the switching transistor, to which a signal for switching between conduction and non-conduction of the switching transistor is input; and a gate connected to the gate of the first transistor and a source connected to ground, A second transistor that forms a current mirror circuit together with the first transistor; and a capacitor having one electrode connected to the gate of the second transistor and the other electrode connected to ground. Constant current drive circuit.
5. The constant current drive circuit according to claim 1, further comprising a resistor connected between the input terminal and a drain of the first transistor.
6. The constant current drive circuit according to claim 5, further comprising a source follower transistor connected between said input terminal and said resistor.
7. The constant current drive circuit according to claim 1, wherein a drain of the second transistor is connected to an organic electroluminescent device.
JP10229650A 1998-08-14 1998-08-14 Constant current drive circuit Expired - Lifetime JP2953465B1 (en)

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