JP5712193B2 - Display device - Google Patents

Description

The present invention relates to an organic OLED (Organic Light Emitting Dev) formed on a substrate.
ice) between the substrate and the cover material.
The present invention also relates to an OLED module in which an IC including a controller is mounted on the OLED panel. In this specification, the OLED panel and the OLED module are collectively referred to as a light emitting device. The present invention further relates to an electronic apparatus using the light emitting device.

The OLED emits light by itself and has high visibility, is not required for a backlight necessary for a liquid crystal display device (LCD), is optimal for thinning, and has no restriction on the viewing angle. Therefore, in recent years OLE
A light emitting device using D is attracting attention as a display device that replaces a CRT or LCD.

The OLED has a layer (hereinafter, referred to as an organic light emitting layer) containing an organic compound (organic light emitting material) capable of obtaining luminescence generated by applying an electric field, an anode layer, and a cathode layer. . Luminescence in organic compounds includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state. Any one of the above-described light emission may be used, or both light emission may be used.

In this specification, all layers provided between the anode and the cathode of the OLED are defined as organic light emitting layers. Specifically, the organic light emitting layer includes a light emitting layer, a hole injection layer, an electron injection layer, a hole transport layer, an electron transport layer, and the like. Basically, the OLED has a structure in which an anode / light emitting layer / cathode is laminated in this order. In addition to this structure, the anode / hole injection layer / light emitting layer / cathode and the anode / hole injection layer / The light emitting layer / electron transport layer / cathode may be stacked in this order.

The problem in putting light emitting devices into practical use is OLE due to deterioration of organic light emitting materials.
The brightness of D was decreased.

Organic light-emitting materials are vulnerable to moisture, oxygen, light, and heat, and their deterioration is accelerated by these materials.
Specifically, the speed of deterioration depends on the structure of the device that drives the light emitting device, the characteristics of the organic light emitting material, the electrode material, the conditions in the manufacturing process, the driving method of the light emitting device, and the like.

Even if the voltage applied to the organic light emitting layer is constant, if the organic light emitting layer is deteriorated, the luminance of the OLED is lowered and the displayed image becomes unclear. In the present specification, a voltage applied to the organic light emitting layer from a pair of electrodes is defined as an OLED drive voltage (Vel).

In addition, in the color display method using three types of OLEDs corresponding to R (red), G (green), and B (blue), the organic light emitting material constituting the organic light emitting layer differs depending on the corresponding color of the OLED. . Therefore, the organic light emitting layer of the OLED may deteriorate at a different speed for each corresponding color. In this case, as time goes on, the brightness of the OLED will differ from color to color,
An image having a desired color cannot be displayed on the light emitting device.

In addition, the temperature of the organic light emitting layer depends on the outside air temperature, the heat generated by the OLED panel itself, etc., but in general, the value of the current flowing through the OLED varies depending on the temperature. FIG. 26 shows changes in the voltage-current characteristics of the OLED when the temperature of the organic light emitting layer is changed. When the voltage is constant, the OLED driving current increases as the temperature of the organic light emitting layer increases. Since the OLED drive current and the brightness of the OLED are in a proportional relationship, the larger the OLED drive current, the greater the OLED drive current.
The brightness of the LED increases. Thus, since the luminance of the OLED changes depending on the temperature of the organic light emitting layer, it is difficult to display a desired gradation, and the current consumption of the light emitting device increases as the temperature rises.

Furthermore, since the degree of change in the OLED drive current due to temperature changes generally differs depending on the type of organic light-emitting material, the luminance of the OLEDs of each color may vary depending on the temperature in color display. If the luminance balance of each color is lost, a desired color cannot be displayed.

In view of the foregoing, it is an object of the present invention to provide a light-emitting device capable of obtaining a certain luminance without being affected by deterioration of the organic light-emitting layer and temperature change, and capable of performing a desired color display. And

The inventor of the present invention pays attention to the fact that the latter causes less decrease in the luminance of the OLED due to deterioration in the case where the OLED drive voltage is kept constant and the light is emitted while the current flowing in the OLED is kept constant. did. In this specification, the current flowing through the OLED is referred to as an OLED drive current (Iel). And it was thought that the change of the brightness | luminance of OLED by deterioration of OLED could be prevented by controlling the brightness | luminance of OLED not by voltage but by electric current.

Specifically, in the present invention, a current mirror circuit formed using a transistor is provided for each pixel. Then, the OLED drive current is controlled using the current mirror circuit. And
The first transistor and the second transistor included in the current mirror circuit are connected so that their drain currents are maintained at substantially the same value regardless of the value of the load resistance.

The drain current I _{1 of} the first transistor is controlled in the signal line driver circuit. The magnitude of the drain current I ₁ of the first transistor, is always equal to the magnitude of the drain current I ₂ of the second transistor regardless of the value of the load resistor, the drain current as a result, the second transistor I ₂ Is controlled in the signal line driver circuit.

The second transistor is connected via one or more circuit elements so that the drain current I ₂ flows through the OLED. Therefore, O flowing through the OLED
The value of the LED driving current is controlled by the signal line driving circuit regardless of the value of the load resistance. In other words, the OLED is not affected by differences in transistor characteristics, OLED degradation, etc.
It becomes possible to control the drive current to a desired value.

In the present invention, the above configuration can suppress a decrease in luminance of the OLED even when the organic light emitting layer is deteriorated, and as a result, a clear image can be displayed. In addition, OL corresponding to each color
In the case of a color display light emitting device using ED, even if the organic light emitting layer of the OLED deteriorates at a different speed for each corresponding color, the balance of luminance of each color is prevented from being lost and a desired color is displayed. be able to.

In addition, even if the temperature of the organic light emitting layer is influenced by the outside air temperature or the heat generated by the OLED panel itself,
The OLED drive current can be controlled to a desired value. Therefore, OLED drive current and OL
Since the luminance of the ED is proportional, it is possible to suppress a change in the luminance of the OLED, and it is possible to prevent the consumption current from increasing as the temperature rises. Further, in the case of a light emitting device for color display, since it is possible to suppress changes in the brightness of the OLEDs of each color without being influenced by temperature changes, it is possible to prevent the balance of the brightness of each color from being lost and display a desired color. can do.

Furthermore, since the degree of change in the OLED drive current due to temperature changes generally differs depending on the type of organic light-emitting material, the luminance of the OLEDs of each color may vary depending on the temperature in color display. However, in the light emitting device of the present invention, a desired luminance can be obtained without being influenced by a temperature change, so that it is possible to prevent the balance of the luminance of each color from being lost and display a desired color.

In a general light-emitting device, since the wiring for supplying current to each pixel itself has a resistance, the potential slightly drops depending on the length of the wiring. The drop in potential varies greatly depending on the image to be displayed. In particular, in a plurality of pixels to which current is supplied from the same wiring, when the ratio of pixels having a high number of gradations is increased, the current flowing through the wiring is increased, and a potential drop is noticeable. When the potential drops, the voltage applied to the OLED of each pixel decreases, so the current supplied to each pixel decreases. Therefore, even if an attempt is made to display a certain gradation in a certain pixel, if the number of gradations of other pixels to which current is supplied from the same wiring changes, the current supplied to the certain pixel is accordingly changed. As a result, the number of gradations also changes. However, in the light emitting device of the present invention, the measured value and the reference value can be obtained for each image to be displayed, and the OLED current can be corrected. Therefore, even if the displayed image changes, the desired number of gradations is displayed by the correction. be able to.

Note that in the light-emitting device of the present invention, a transistor used for a pixel may be a transistor formed using single crystal silicon, or a thin film transistor using polycrystalline silicon or amorphous silicon.

With the above-described structure, the light-emitting device of the present invention can obtain a certain luminance without being influenced by a temperature change. In color display, an OLE having a different organic light emitting material for each color.
Even when D is provided, it is possible to prevent the luminance of the OLEDs of the respective colors from being varied due to the temperature and preventing a desired color from being obtained.

1 is a top block diagram of a light emitting device of the present invention. FIG. 3 is a circuit diagram of a pixel of a light emitting device of the present invention. 6 is a timing chart of signals input to the scanning lines. Schematic of a pixel in driving. The figure which shows the timing which the writing period and display period appear in an analog drive method. The figure which shows the timing which the writing period and display period appear in a digital drive method. FIG. 3 is a circuit diagram of a pixel of a light emitting device of the present invention. FIG. 3 is a circuit diagram of a pixel of a light emitting device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting device of the present invention. FIG. 6 is a top view of a pixel of a light-emitting device of the present invention. FIG. 6 is a cross-sectional view of a pixel of a light-emitting device of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting device of the present invention. FIG. 6 is a top view of a pixel of a light-emitting device of the present invention. FIG. 6 is a top view of a pixel of a light-emitting device of the present invention. FIG. 11 is a block diagram of a signal line driver circuit. 3 is a detailed diagram of a signal line driver circuit in a digital driving method. FIG. The circuit diagram of the electric current setting circuit in a digital drive method. FIG. 11 is a block diagram of a scan line driver circuit. The figure which shows the timing which the writing period and display period appear in a digital drive method. The figure which shows the timing which the writing period and display period appear in a digital drive method. The figure which shows the timing which the writing period and display period appear in a digital drive method. The external view and sectional drawing of the light-emitting device of this invention. FIG. 14 is a diagram of an electronic device using the light-emitting device of the present invention. The figure which shows the voltage-current characteristic of OLED. FIG. 6 is a cross-sectional view of a pixel of a light-emitting device of the present invention. The top view of the element substrate of the light-emitting device of this invention. The enlarged view of the element substrate of the light-emitting device of this invention. FIG. 3 is a circuit diagram of a pixel of a light emitting device of the present invention. 3 is a detailed diagram of a signal line driver circuit in a digital driving method. FIG.

(Embodiment 1)
FIG. 1 is a block diagram showing the configuration of the OLED panel of the present invention. 100 is a pixel portion,
A plurality of pixels 101 are formed in a matrix. Reference numeral 102 denotes a signal line driving circuit, 10
Reference numeral 3 denotes a scanning line driving circuit.

In FIG. 1, the signal line driver circuit 102 and the scanning line driver circuit 103 are formed over the same substrate as the pixel portion 100; however, the present invention is not limited to this structure. The signal line driver circuit 102 and the scan line driver circuit 103 may be formed over a different substrate from the pixel unit 100 and connected to the pixel unit 100 via a connector such as an FPC. In FIG. 1, the signal line driver circuit 102 is also shown.
However, the present invention is not limited to this configuration. The number of the signal line driver circuits 102 and the scanning line driver circuits 103 can be arbitrarily set by a designer.

  In this specification, the connection means an electrical connection.

In FIG. 1, the signal lines S1 to Sx, the power supply lines V1 to Vx, and the scanning lines G1 to Gx are connected to the pixel portion 100.
y is provided. Note that the number of signal lines and power supply lines is not necessarily the same. In addition to these wirings, other different wirings may be provided.

The power supply lines V1 to Vx are kept at a predetermined potential. Although FIG. 1 shows the configuration of a light emitting device that displays a monochrome image, the present invention may be a light emitting device that displays a color image. In that case, the heights of the potentials of the power supply lines V1 to Vx need not be kept all the same, and may be changed for each corresponding color.

FIG. 2 shows a detailed configuration of the pixel 101 shown in FIG. 2 includes a signal line Si (one of S1 to Sx), a scanning line Gj (one of G1 to Gy), and a power supply line Vi (one of V1 to Vx). Have.

The pixel 101 includes a transistor Tr1 (first current control transistor or first transistor), a transistor Tr2 (second current control transistor or second transistor), a transistor Tr3 (third current control transistor or third transistor). Transistor)
, Transistor Tr4 (first switching transistor or fourth transistor),
Transistor Tr5 (second switching transistor or fifth transistor), O
It has at least an LED 104 and a holding capacitor 105.

The gate electrodes of the transistors Tr4 and Tr5 are both connected to the scanning line Gj.

One of the source region and the drain region of the transistor Tr4 is connected to the signal line Si, and the other is connected to the drain region of the transistor Tr1. One of the source region and the drain region of the transistor Tr5 is connected to the signal line Si, and the other is connected to the gate electrode of the transistor Tr3.

The gate electrodes of the transistor Tr1 and the transistor Tr2 are connected to each other. The source regions of the transistors Tr1 and Tr2 are both connected to the power supply line Vi.

In the transistor Tr2, the gate electrode and the drain region are connected, and the drain region is connected to the source region of the transistor Tr3.

A drain region of the transistor Tr3 is connected to a pixel electrode included in the OLED 104. The OLED 104 has an anode and a cathode. In this specification, the anode is a pixel electrode (first electrode).
When the cathode is used as a pixel electrode, the anode is called a counter electrode.

The potential of the power supply line Vi (power supply potential) is kept at a constant height. The potential of the counter electrode is also
It is kept at a certain height.

Note that the transistor Tr4 and the transistor Tr5 may be either an n-channel transistor or a p-channel transistor. However, the transistor Tr4 and the transistor T
r5 has the same polarity.

The transistors Tr1, Tr2, and Tr3 may be either n-channel transistors or p-channel transistors. However, the polarities of the transistors Tr1, Tr2 and Tr3 are the same. When the anode is used as the pixel electrode and the cathode is used as the counter electrode, the transistors Tr1, Tr2, and Tr3 are p-channel transistors. vice versa,
When the anode is used as the counter electrode and the cathode is used as the pixel electrode, the transistors Tr1, T
r2 and Tr3 are n-channel transistors.

The storage capacitor 105 is formed between the gate electrode of the transistor Tr3 and the power supply line Vi. The storage capacitor 105 is provided in order to more reliably maintain the voltage (gate voltage) between the gate electrode and the source region of the transistor Tr3, but it is not necessarily provided.

In addition, a storage capacitor is formed between the gate electrodes of the transistors Tr1 and Tr2 and the power supply line,
The gate voltages of the transistors Tr1 and Tr2 may be more reliably maintained.

Next, driving of the light emitting device of the present invention will be described with reference to FIGS. The driving of the light emitting device of the present invention can be described by being divided into the writing period Ta and the display period Td. FIG.
Shows a timing chart of each scanning line. A period during which a scan line is selected, in other words, a period in which all transistors whose gate electrodes are connected to the scan line are in an on state.
Indicated by N. On the contrary, a period in which the scan line is not selected, in other words, a period in which all the transistors whose gate electrodes are connected to the scan line is in an OFF state is indicated by OFF. FIG. 4 is a diagram simply showing the connection between the transistor Tr4 and the transistor Tr5 in the writing period Ta and the display period Td.

In the writing period Ta, the scanning lines G1 to Gy are sequentially selected as shown in FIG. Then, based on the potential of the video signal input to the signal line driver circuit 102, the signal lines S1 to S1.
A constant current Ic flows between Sx and the power supply lines V1 to Vx. In this specification, the current Ic is referred to as a signal current.

FIG. 4A shows a schematic diagram of the pixel 101 in the case where a constant current Ic flows through the signal line Si in the writing period Ta. Reference numeral 106 denotes a terminal for connection with a power source to which a potential is applied to the counter electrode. Reference numeral 107 denotes a constant current source included in the signal line driver circuit 102.

Since the transistors Tr4 and Tr5 are in the on state, a constant current Ic is applied to the signal line Si.
When the current flows, the constant current Ic flows between the drain region and the source region of the transistor Tr1. At this time, the magnitude of the current Ic is controlled in the constant current source 107 so that the transistor Tr1 operates in the saturation region. In the saturation region, V _GS is the potential difference (gate voltage) between the gate electrode and the source region, μ is the mobility of the transistor, C ₀ is the gate capacitance per unit area, and W / L is the channel width W and the channel of the channel formation region. When the ratio of length L, V _TH is a threshold value, μ is mobility, and the drain current of the transistor Tr1 is I ₁ , the following Expression 1 is established.

(Formula 1)
_{I 1 = μC 0 W / L} (V GS -V TH) 2/2

In Equation 1, μ, C ₀ , W / L, and V _TH are all fixed values determined by individual transistors. The drain current I1 of the transistor Tr1 is kept at a constant Ic by the constant current source 107. Therefore, as can be seen from Equation 1, the gate voltage V _GS of the transistor Tr1 is determined by the current value Ic.

The gate electrode of the transistor Tr2 is connected to the gate electrode of the transistor Tr1. The source region of the transistor Tr2 is connected to the source region of the transistor Tr1. Therefore, the gate voltage of the transistor Tr1 is not changed as it is.
The gate voltage is r2. Accordingly, the drain current I ₂ of the transistor Tr2 is kept at the same magnitude as the drain current of the transistor Tr1. That is, I ₂ = Ic.

Then, since the drain current I ₂ of the transistor Tr2 becomes the drain current of the transistor Tr3 as it is, a gate voltage having a magnitude corresponding to the value of the drain current I ₂ is generated in the transistor Tr3 according to Equation 1.

Therefore, the drain current I ₂ of the transistor Tr2 flows to the OLED 104 through the channel formation region of the transistor Tr3. Therefore, the OLED drive current is constant current source 1
It becomes the same magnitude as the constant current Ic determined in 07.

The OLED 104 emits light with a luminance corresponding to the magnitude of the OLED drive current. When the OLED drive current is as close as possible to 0 or when the OLED drive current flows in the reverse bias direction, the OLED 104 does not emit light.

When the selection of all the scanning lines G1 to Gy is finished and the above operation is performed on the pixels of all the lines, the writing period Ta is finished. When the writing period Ta ends, the display period Td starts.

FIG. 3B shows a timing chart of scanning lines in the display period Td.
In the display period Td, all the scanning lines G1 to Gy are not selected.

FIG. 4B shows a schematic diagram of a pixel in the display period Td. The transistors Tr4 and Tr5 are in an off state. Further, the transistor Tr4 and the transistor Tr
The source region 5 is connected to the power supply line Vi and is kept at a constant potential (power supply potential).

In the display period Td, the drain region of the transistor Tr1 is in a so-called floating state in which no potential is applied from another wiring, a power source, or the like. On the other hand, transistors Tr2 and T
In r3, V _GS determined in the writing period Ta is maintained as it is.
Therefore, the value of the drain current I ₂ of the transistor Tr2 is kept at Ic,
In addition, the transistor Tr3 remains on. Therefore, in the display period Td, the OLED driving current determined in the writing period Ta is maintained as it is, and the OLED 104 emits light with a luminance corresponding to the magnitude of the OLED driving current.

In the case of a driving method using an analog video signal (analog driving method), the size of Ic is determined by the analog video signal, and the OLED has a luminance corresponding to the size of Ic.
The gradation is displayed by the fact that 104 emits light. In this case, one writing period Ta and one display period Td constitute one frame period, and one image is displayed in the frame period.

FIG. 5 shows an example of a timing chart in the analog driving method. One frame period has y line periods, and each scanning line is selected in each line period. In each line period, a constant current Ic (Ic1 to Icx) flows through each signal line. In FIG. 5, the value of the signal current flowing through each signal line in the line period Lj (j = 1 to y) is expressed as Ic1 [Lj].
~ Icx [Lj].

The start timing of the writing period Ta and the display period Td is shifted for each line, and the timing at which the writing period of each line appears does not overlap. When the display period Td ends for all pixels, one image is displayed.

On the other hand, in the case of a time gradation driving method (digital driving method) using a digital video signal, 1
By repeatedly appearing the writing period Ta and the display period Td during the frame period, it is possible to display one image. When an image is displayed using an n-bit video signal, at least n writing periods and n display periods are provided in one frame period. n
The writing period (Ta1 to Tan) and n display periods (Td1 to Tdn) correspond to each bit of the video signal.

FIG. 6 shows a timing at which n writing periods (Ta1 to Tan) and n display periods (Td1 to Tdn) appear in one frame period. The horizontal axis indicates time, and the vertical axis indicates the position of the scanning line included in the pixel.

Next to the writing period Tam (m is an arbitrary number from 1 to n), a display period corresponding to the same number of bits, in this case Tdm, appears. The writing period Ta and the display period Td are collectively called a subframe period SF. Write period Tam and display period Tdm corresponding to the m-th bit
The sub-frame period having “” is SFm.

The lengths of the subframe periods SF1 to SFn are SF1: SF2:...: SFn = 2 ⁰ : 2 ¹ :
...: 2 ^n-1 is satisfied.

Note that a subframe period having a long display period may be divided into several parts in order to improve image quality on display. The specific division method is disclosed in Japanese Patent Application No. 2000-267164, and can be referred to.

In the driving method shown in FIG. 6, gradation is displayed by controlling the sum of the lengths of the display periods during which light is emitted in one frame period.

In the present invention, the above configuration can suppress a decrease in luminance of the OLED even when the organic light emitting layer is deteriorated, and as a result, a clear image can be displayed. In addition, OL corresponding to each color
In the case of a color display light emitting device using ED, even if the organic light emitting layer of the OLED deteriorates at a different speed for each corresponding color, the balance of luminance of each color is prevented from being lost and a desired color is displayed. be able to.

In addition, even if the temperature of the organic light emitting layer is influenced by the outside air temperature or the heat generated by the OLED panel itself,
The OLED drive current can be controlled to a desired value. Therefore, OLED drive current and OL
Since the luminance of the ED is proportional, it is possible to suppress a change in the luminance of the OLED, and it is possible to prevent the consumption current from increasing as the temperature rises. Further, in the case of a light emitting device for color display, since it is possible to suppress changes in the brightness of the OLEDs of each color without being influenced by temperature changes, it is possible to prevent the balance of the brightness of each color from being lost and display a desired color. can do.

Furthermore, since the degree of change in the OLED drive current due to temperature changes generally differs depending on the type of organic light-emitting material, the luminance of the OLEDs of each color may vary depending on the temperature in color display. However, in the light emitting device of the present invention, a desired luminance can be obtained without being influenced by a temperature change, so that it is possible to prevent the balance of the luminance of each color from being lost and display a desired color.

In a general light-emitting device, since the wiring for supplying current to each pixel itself has a resistance, the potential slightly drops depending on the length of the wiring. The drop in potential varies greatly depending on the image to be displayed. In particular, in a plurality of pixels to which current is supplied from the same wiring, when the ratio of pixels having a high number of gradations is increased, the current flowing through the wiring is increased, and a potential drop is noticeable. When the potential drops, the voltage applied to the OLED of each pixel decreases, so the current supplied to each pixel decreases. Therefore, even if an attempt is made to display a certain gradation in a certain pixel, if the number of gradations of other pixels to which current is supplied from the same wiring changes, the current supplied to the certain pixel is accordingly changed. As a result, the number of gradations also changes. However, in the light emitting device of the present invention, the measured value and the reference value can be obtained for each image to be displayed, and the OLED current can be corrected. Therefore, even if the displayed image changes, the desired number of gradations is displayed by the correction. be able to.

(Embodiment 2)
In this embodiment, a structure different from that in FIG. 2 of the pixel 101 illustrated in FIG. 1 is described.

FIG. 7 shows a configuration of a pixel of this embodiment mode. A pixel 101 illustrated in FIG. 7 includes a signal line Si (S1
To Sx), the scanning line Gj (one of G1 to Gy), and the power supply line Vi (V1 to V1).
One of Vx).

The pixel 101 includes a transistor Tr1 (first current control transistor or first transistor), a transistor Tr2 (second current control transistor or second transistor), a transistor Tr3 (third current control transistor or third transistor). Transistor)
, Transistor Tr4 (first switching transistor or fourth transistor),
Transistor Tr5 (second switching transistor or fifth transistor), O
It has at least an LED 104 and a holding capacitor 105.

The gate electrodes of the transistors Tr4 and Tr5 are both connected to the scanning line Gj.

One of the source region and the drain region of the transistor Tr4 is connected to the signal line Si, and the other is connected to the drain region of the transistor Tr1. One of the source region and the drain region of the transistor Tr5 is connected to the drain region of the transistor Tr1, and the other is connected to the gate electrode of the transistor Tr3.

The gate electrodes of the transistor Tr1 and the transistor Tr2 are connected to each other. The source regions of the transistors Tr1 and Tr2 are both connected to the power supply line Vi.

In the transistor Tr2, the gate electrode and the drain region are connected, and the drain region is connected to the source region of the transistor Tr3.

A drain region of the transistor Tr3 is connected to a pixel electrode included in the OLED 104. The potential of the power supply line Vi (power supply potential) is kept at a constant height. The potential of the counter electrode is also maintained at a constant height.

Note that the transistor Tr4 and the transistor Tr5 may be either an n-channel transistor or a p-channel transistor. However, the transistor Tr4 and the transistor T
r5 has the same polarity.

The transistors Tr1, Tr2, and Tr3 may be either n-channel transistors or p-channel transistors. However, the polarities of the transistors Tr1, Tr2 and Tr3 are the same. When the anode is used as the pixel electrode and the cathode is used as the counter electrode, the transistors Tr1, Tr2, and Tr3 are p-channel transistors. vice versa,
When the anode is used as the counter electrode and the cathode is used as the pixel electrode, Tr1, Tr2 and Tr
Reference numeral 3 denotes an n-channel transistor.

The storage capacitor 105 is formed between the gate electrode of the transistor Tr3 and the power supply line Vi. The storage capacitor 105 is provided in order to more reliably maintain the gate voltage of the transistor Tr3, but is not necessarily provided.

In addition, a storage capacitor is formed between the gate electrodes of the transistors Tr1 and Tr2 and the power supply line,
The gate voltages of the transistors Tr1 and Tr2 may be more reliably maintained.

The operation of the light-emitting device including the pixel illustrated in FIG. 7 can be described by being divided into the writing period Ta and the display period Td as in the case of the pixel illustrated in FIG. The operation of the pixel in the writing period Ta and the display period Td is the same as that of the pixel shown in FIG. 2, and the description in FIGS. 3 and 4 of Embodiment 1 can be referred to. Is omitted.

(Embodiment 3)
In this embodiment, a structure of the pixel 101 illustrated in FIG. 1 which is different from those in FIGS. 2 and 7 will be described.

FIG. 8 shows a configuration of a pixel of this embodiment mode. A pixel 101 illustrated in FIG. 8 includes a signal line Si (S1
To Sx), the scanning line Gj (one of G1 to Gy), and the power supply line Vi (V1 to V1).
One of Vx).

The pixel 101 includes a transistor Tr1 (first current control transistor or first transistor), a transistor Tr2 (second current control transistor or second transistor), a transistor Tr3 (third current control transistor or third transistor). Transistor)
, Transistor Tr4 (first switching transistor or fourth transistor),
Transistor Tr5 (second switching transistor or fifth transistor), O
It has at least an LED 104 and a holding capacitor 105.

The gate electrodes of the transistors Tr4 and Tr5 are both connected to the scanning line Gj.

One of the source region and the drain region of the transistor Tr4 is connected to the signal line Si, and the other is connected to the gate electrode of the transistor Tr3. One of the source region and the drain region of the transistor Tr5 is connected to the gate electrode of the transistor Tr3, and the other is connected to the drain region of the transistor Tr1.

The gate electrodes of the transistor Tr1 and the transistor Tr2 are connected to each other. The source regions of the transistors Tr1 and Tr2 are both connected to the power supply line Vi.

In the transistor Tr2, the gate electrode and the drain region are connected, and the drain region is connected to the source region of the transistor Tr3.

A drain region of the transistor Tr3 is connected to a pixel electrode included in the OLED 104. The potential of the power supply line Vi (power supply potential) is kept at a constant height. The potential of the counter electrode is also maintained at a constant height.

Note that the transistor Tr4 and the transistor Tr5 may be either an n-channel transistor or a p-channel transistor. However, the transistor Tr4 and the transistor T
r5 has the same polarity.

The transistors Tr1, Tr2, and Tr3 may be either n-channel transistors or p-channel transistors. However, the polarities of the transistors Tr1, Tr2 and Tr3 are the same. When the anode is used as the pixel electrode and the cathode is used as the counter electrode, the transistors Tr1, Tr2, and Tr3 are p-channel transistors. vice versa,
When the anode is used as the counter electrode and the cathode is used as the pixel electrode, the transistors Tr1, T
r2 and Tr3 are n-channel transistors.

The storage capacitor 105 is formed between the gate electrode of the transistor Tr3 and the power supply line Vi. The storage capacitor 105 is provided in order to more reliably maintain the voltage (gate voltage) between the gate electrode and the source region of the transistor Tr3, but it is not necessarily provided.

In addition, a storage capacitor is formed between the gate electrodes of the transistors Tr1 and Tr2 and the power supply line,
The gate voltages of the transistors Tr1 and Tr2 may be more reliably maintained.

The operation of the light-emitting device having the pixel shown in FIG. 8 can be described by being divided into the writing period Ta and the display period Td, as in the case of the pixel shown in FIG. The operation of the pixel in the writing period Ta and the display period Td is the same as that of the pixel shown in FIG. 2, and the description in FIGS. 3 and 4 of Embodiment 1 can be referred to. Is omitted.

  Examples of the present invention will be described below.

An example of a method for manufacturing a light-emitting device of the present invention will be described with reference to FIGS. Here, as a typical example, a method for simultaneously manufacturing the transistors Tr2, Tr3, and Tr5 of the pixel shown in FIG. 2 and the transistor of the driver provided in the periphery of the pixel portion will be described in detail according to the process. The transistors Tr1 and Tr4 are also transistors Tr2, Tr3 and T
It can be produced according to the production method of r5. In addition, the pixels illustrated in FIGS. 7, 8, and 30 can be manufactured using the manufacturing method described in this embodiment.

First, in this embodiment, a substrate 900 made of glass such as barium borosilicate glass represented by Corning # 7059 glass or # 1737 glass or aluminoborosilicate glass is used. Note that the substrate 900 is not limited as long as it is a light-transmitting substrate, and a quartz substrate may be used. Further, a plastic substrate having heat resistance that can withstand the processing temperature of this embodiment may be used.

Next, as illustrated in FIG. 9A, a base film 901 formed of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed over a substrate 900. Although a two-layer structure is used as the base film 901 in this embodiment, a single-layer film of the insulating film or a structure in which two or more layers are stacked may be used. As a first layer of the base film 901, a silicon oxynitride film 901 a formed by using a plasma CVD method and using SiH ₄ , NH ₃ , and N ₂ O as a reaction gas is formed to 10 to 200 nm (preferably 50 to 100 nm). To do.
In this embodiment, a silicon oxynitride film 901a having a thickness of 50 nm (composition ratio Si = 32%, O = 27
%, N = 24%, H = 17%). Next, as a second layer of the base film 901, a silicon oxynitride film 901 b formed using SiH ₄ and N ₂ O as a reactive gas is formed with a plasma CVD method to a thickness of 50 to 200 nm (preferably 100 to 150 nm). Stacked to a thickness.
In this embodiment, a silicon oxynitride film 901b having a thickness of 100 nm (composition ratio Si = 32%, O = 5
9%, N = 7%, H = 2%).

Next, semiconductor layers 902 to 905 are formed over the base film 901. Semiconductor layers 902 to 90
5 is a method of forming a semiconductor film having an amorphous structure by a known means (sputtering method, LPCVD method, plasma CVD method, etc.) and then performing a known crystallization process (laser crystallization method, thermal crystallization method, Alternatively, a crystalline semiconductor film obtained by performing a thermal crystallization method using a catalyst such as nickel) is formed by patterning into a desired shape.
The semiconductor layers 902 to 905 are formed with a thickness of 25 to 80 nm (preferably 30 to 60 nm). There is no limitation on the material of the crystalline semiconductor film, but it is preferably formed of silicon (silicon) or a silicon germanium (Si _x Ge _1-x (X = 0.0001 to 0.02)) alloy. In this example, a 55 nm amorphous silicon film was formed by plasma CVD, and then a solution containing nickel was held on the amorphous silicon film. This amorphous silicon film is dehydrogenated (500 ° C., 1 hour), then thermally crystallized (550 ° C., 4 hours), and further laser annealed to improve crystallization. Thus, a crystalline silicon film was formed. Then, the crystalline silicon film is subjected to patterning processing using a photolithography method, so that the semiconductor layer 9
02-905 were formed.

Further, after the semiconductor layers 902 to 905 are formed, the semiconductor layers 902 to 905 may be doped with a small amount of impurity elements (boron or phosphorus) in order to control the threshold value of the TFT.

When a crystalline semiconductor film is formed by a laser crystallization method, a pulse oscillation type or continuous emission type excimer laser, YAG laser, or YVO ₄ laser can be used. When these lasers are used, it is preferable to use a method in which laser light emitted from a laser oscillator is linearly collected by an optical system and irradiated onto a semiconductor film. Crystallization conditions are appropriately selected by the practitioner. When an excimer laser is used, the pulse oscillation frequency is 300 Hz, and the laser energy density is 100 to 400 mJ / cm ² (typically 200 to 300 m).
J / cm ² ). When using a YAG laser, the second harmonic is used and the pulse oscillation frequency is set to 30 to 300 kHz, and the laser energy density is set to 300 to 600 mJ / c.
m ² (typically 350 to 500 mJ / cm ² ) is preferable. And width 100-1000μ
m, for example, 400 [mu] m linearly focused laser light may be irradiated over the entire surface of the substrate, and the linear laser light superposition ratio (overlap ratio) at this time may be 50 to 90%.

Next, a gate insulating film 906 that covers the semiconductor layers 902 to 905 is formed. The gate insulating film 906 is formed of an insulating film containing silicon with a thickness of 40 to 150 nm by a plasma CVD method or a sputtering method. In this embodiment, a silicon oxynitride film (composition ratio: Si = 32%, O = 59%, N = 7%, H = 2%) with a thickness of 110 nm is formed by plasma CVD. Needless to say, the gate insulating film is not limited to the silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure.

When a silicon oxide film is used, TEOS (Tetraethyl Ortho
Silicate) and mixed with O _2, the reaction pressure 40 Pa, a substrate temperature of 300 to 400 ° C., and by discharging at a high frequency (13.56 MHz) power density 0.5~0.8W / cm ² can be formed. The silicon oxide film thus manufactured can obtain good characteristics as a gate insulating film by thermal annealing at 400 to 500 ° C. thereafter.

Then, a heat resistant conductive layer 907 for forming a gate electrode is formed on the gate insulating film 906 by 2
It is formed with a thickness of 00 to 400 nm (preferably 250 to 350 nm). Heat-resistant conductive layer 9
07 may be formed as a single layer, or may have a laminated structure including a plurality of layers such as two layers or three layers as necessary. The heat resistant conductive layer includes an element selected from Ta, Ti, and W, an alloy containing the element as a component, or an alloy film combining the elements. These heat-resistant conductive layers are formed by a sputtering method or a CVD method, and it is preferable to reduce the concentration of impurities contained in order to reduce the resistance. Particularly, the oxygen concentration is preferably 30 ppm or less. In this embodiment, the W film is formed with a thickness of 300 nm. The W film may be formed by sputtering using W as a target, or may be formed by thermal CVD using tungsten hexafluoride (WF ₆ ). In any case, in order to use as a gate electrode, it is necessary to reduce the resistance, and the resistivity of the W film is desirably 20 μΩcm or less. The resistivity of the W film can be reduced by increasing the crystal grains. However, when there are many impurity elements such as oxygen in W, crystallization is hindered and the resistance is increased. Therefore, when sputtering is used, the purity is 9
By using a W target of 9.9999% or a purity of 99.99% and forming a W film with sufficient consideration so that impurities are not mixed from the gas phase during film formation, the resistivity is 9 to 20%.
μΩcm can be realized.

On the other hand, when a Ta film is used for the heat-resistant conductive layer 907, it can be similarly formed by sputtering. The Ta film uses Ar as a sputtering gas. In addition, when an appropriate amount of Xe or Kr is added to the gas during sputtering, the internal stress of the film to be formed can be relaxed and the film can be prevented from peeling. The resistivity of the α-phase Ta film is about 20 μΩcm and can be used as a gate electrode, but the resistivity of the β-phase Ta film is about 180 μΩcm and is not suitable for a gate electrode. Since the TaN film has a crystal structure close to an α phase, an α phase Ta film can be easily obtained by forming a TaN film under the Ta film. Although not shown, it is effective to form a silicon film doped with phosphorus (P) with a thickness of about 2 to 20 nm under the heat-resistant conductive layer 907. This improves adhesion and prevents oxidation of the conductive film formed thereon, and at the same time, the alkali metal element contained in a trace amount in the heat-resistant conductive layer 907 diffuses into the gate insulating film 906 having the first shape. Can be prevented. In any case, the heat resistant conductive layer 907 preferably has a resistivity in the range of 10 to 50 μΩcm.

Next, a resist mask 908 is formed using a photolithography technique. Then, a first etching process is performed. In this embodiment, an ICP etching apparatus is used, Cl ₂ and CF ₄ are used as etching gases, and 3.2 W / cm ² of RF (13.5) at a pressure of 1 Pa.
6 MHz) Power is applied to form plasma.
224 mW / cm ² of RF (13.56 MHz) power is also applied to the substrate side (sample stage), thereby applying a substantially negative self-bias voltage. Under this condition, the etching rate of the W film is about 100 nm / min. In the first etching process, the time during which the W film was just etched was estimated based on this etching rate, and the time when the etching time was increased by 20% was used as the etching time.

Conductive layers 909 to 913 having a first tapered shape are formed by the first etching treatment. The angle of the tapered portion of the conductive layers 909 to 913 is formed to be 15 to 30 °. In order to perform etching without leaving a residue, overetching that increases the etching time at a rate of about 10 to 20% is performed. Since the selection ratio of the silicon oxynitride film (gate insulating film 906) to the W film is 2 to 4 (typically 3), the surface on which the silicon oxynitride film is exposed is etched by about 20 to 50 nm by overetching. Is done. (Fig. 9 (B))

Then, a first doping process is performed to add an impurity element of one conductivity type to the semiconductor layer. Here, a step of adding an impurity element imparting n-type is performed. The mask 908 on which the first shape conductive layer is formed is left as it is, and an impurity element imparting n-type is added by ion doping in a self-aligning manner using the first tapered conductive layers 909 to 913 as a mask. In order to add the impurity element imparting n-type through the tapered portion at the end of the gate electrode and the gate insulating film 906 to reach the semiconductor layer located thereunder, the dose is set to 1 × 10 ^{13 to} 5 ×.
The acceleration voltage is 80 to 160 keV with 10 ¹⁴ atoms / cm ² . As an impurity element imparting n-type, an element belonging to Group 15, typically phosphorus (P) or arsenic (As) is used, and phosphorus (P) is used here. By such an ion doping method, an impurity element imparting n-type conductivity is added to the first impurity regions 914 to 917 in a concentration range of 1 × 10 ²⁰ to 1 × 10 ²¹ atomic / cm ³ . (Figure 9 (C))

In this step, depending on doping conditions, the impurity may be the first shape conductive layer 909.
˜ 913, and the first impurity regions 914 to 917 have the first shape of the conductive layer 909.
It can also happen to overlap with ~ 913.

Next, a second etching process is performed as shown in FIG. The etching process is similarly performed by an ICP etching apparatus, and a mixed gas of CF ₄ and Cl ₂ is used as an etching gas.
F power 3.2W / cm ² (13.56MHz), bias power 45mW / cm ² (13.56M
Hz) at a pressure of 1.0 Pa. Conductive layers 918 to 922 having the second shape formed under these conditions are formed. A tapered portion is formed at the end, and a taper shape is formed in which the thickness gradually increases from the end toward the inside. Compared to the first etching process, the ratio of isotropic etching is increased by reducing the bias power applied to the substrate side, and the angle of the tapered portion is 30 to 60 °. The mask 908 is etched to scrape the end portion to form a mask 923. 9D, the surface of the gate insulating film 906 has a thickness of 40 n.
Etched about m.

Then, an impurity element imparting n-type conductivity is doped under a condition of a high acceleration voltage with a dose amount lower than that in the first doping treatment. For example, the acceleration voltage is 70 to 120 keV and 1 × 10
The first impurity regions 924 to 92 having an impurity concentration increased by performing a dose of ¹³ / cm ^2.
7 and second impurity regions 928 to 931 in contact with the first impurity regions 924 to 927 are formed. In this step, depending on the doping conditions, impurities may flow under the second shape conductive layers 918 to 922, and the second impurity regions 928 to 931 overlap with the second shape conductive layers 918 to 922. Can also happen. The impurity concentration in the second impurity region is set to 1 × 10 ¹⁶ to 1 × 10 ¹⁸ atoms / cm ³ . (Fig. 10 (A))

Then, as shown in FIG. 10B, a semiconductor layer 90 for forming a p-channel TFT.
2 and 905, impurity regions 933 (933a, 933b) and 9 of the conductivity type opposite to the one conductivity type are used.
34 (934a, 934b) are formed. Also in this case, the second shape conductive layers 918 and 921 are used.
, 922 as a mask, an impurity element imparting p-type is added, and an impurity region is formed in a self-aligning manner. At this time, the semiconductor layers 903 and 904 forming the n-channel TFT are covered with a resist mask 932 so as to cover the entire surface. Impurity regions 933 and 9 formed here
34 is diborane (B ₂ H ₆ )
It forms by the ion doping method using this. The concentration of the impurity element imparting p-type in the impurity regions 933 and 934 is set to 2 × 10 ²⁰ to 2 × 10 ²¹ atoms / cm ³ .

However, the impurity regions 933 and 934 can be divided into two regions containing an impurity element imparting n-type in detail. The third impurity regions 933a and 934a include an impurity element imparting n-type at a concentration of 1 × 10 ²⁰ to 1 × 10 ²¹ atoms / cm ³ ,
The fourth impurity regions 933b and 934b contain an impurity element imparting n-type at a concentration of 1 × 10 ¹⁷ to 1 × 10 ²⁰ atoms / cm ³ . However, these impurity regions 933b, 9
The concentration of the impurity element imparting p-type of 34b is set to 1 × 10 ¹⁹ atoms / cm ³ or more, and the concentration of the impurity element imparting p-type is set to n-type in the third impurity regions 933a and 934a. By making it 1.5 to 3 times the concentration of the impurity element to be applied,
Since the third impurity region functions as the source region and the drain region of the p-channel TFT, no problem occurs.

After that, as shown in FIG. 10C, a first interlayer insulating film 937 is formed over the conductive layers 918 to 922 and the gate insulating film 906 having the second shape. The first interlayer insulating film 937 may be formed using a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or a stacked film in which these are combined. In any case, the first interlayer insulating film 937 is formed from an inorganic insulating material. The thickness of the first interlayer insulating film 937 is 100 to 200 nm. First interlayer insulating film 9
In the case where a silicon oxide film is used as 37, TEOS and O ₂ are mixed by plasma CVD, the reaction pressure is 40 Pa, the substrate temperature is 300 to 400 ° C., and the high frequency (13.56 MHz) power density is 0.5 to 0.00. It can be formed by discharging at 8 W / cm ² . When a silicon oxynitride film is used as the first interlayer insulating film 937, SiH ₄ , N ₂ is formed by plasma CVD.
A silicon oxynitride film made of O or NH ₃ or a silicon oxynitride film made of SiH ₄ or N ₂ O may be used. The production conditions in this case are reaction pressures of 20 to 200 Pa,
It can be formed at a substrate temperature of 300 to 400 ° C. and a high frequency (60 MHz) power density of 0.1 to 1.0 W / cm ² . Alternatively, a silicon oxynitride silicon film formed from SiH ₄ , N ₂ O, and H ₂ may be used as the first interlayer insulating film 937. Similarly, the silicon nitride film is plasma C
It can be produced from SiH ₄ and NH _{3 by the} VD method.

Then, a step of activating the impurity element imparting n-type or p-type added at each concentration is performed. This step is performed by a thermal annealing method using a furnace annealing furnace. In addition, a laser annealing method or a rapid thermal annealing method (RTA method) can be applied. In the thermal annealing method, the oxygen concentration is 1 ppm or less, preferably 0.1 ppm or less in a nitrogen atmosphere at 400 to 700 ° C., typically 500 to 600 ° C. In this example, the temperature is 550 ° C. for 4 hours. Heat treatment was performed. In addition, when a plastic substrate having a low heat resistant temperature is used for the substrate 900, it is preferable to apply a laser annealing method.

Subsequent to the activation step, the step of hydrogenating the semiconductor layer is performed by changing the atmosphere gas and performing heat treatment at 300 to 450 ° C. for 1 to 12 hours in an atmosphere containing 3 to 100% hydrogen.
This step is a step of terminating dangling bonds of 10 ¹⁶ to 10 ¹⁸ / cm ^{3 in} the semiconductor layer by thermally excited hydrogen. As another means of hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) may be performed. In any case, the semiconductor layers 902 to 90
It is desirable that the defect density in 5 be 10 ¹⁶ / cm ³ or less.
. What is necessary is just to give about 1 atomic%.

Then, a second interlayer insulating film 939 made of an organic insulating material is formed with an average film thickness of 1.0 to 2.0 μm. As the organic resin material, polyimide, acrylic, polyamide, polyimide amide, BCB (benzocyclobutene), or the like can be used. For example, when using a type of polyimide that is thermally polymerized after being applied to the substrate, it is formed by baking at 300 ° C. in a clean oven. When acrylic is used, a two-component one is used. After mixing the main material and the curing agent, the mixture is applied to the entire surface of the substrate using a spinner, and then heated at 80 ° C. with a hot plate.
It can be formed by performing preheating for 0 second and further baking at 250 ° C. for 60 minutes in a clean oven.

Thus, the surface can be satisfactorily planarized by forming the second interlayer insulating film 939 from an organic insulating material. Moreover, since the organic resin material generally has a low dielectric constant, parasitic capacitance can be reduced. However, since it is hygroscopic and not suitable as a protective film, it is preferably used in combination with a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or the like formed as the first interlayer insulating film 937 as in this embodiment. .

Thereafter, a resist mask having a predetermined pattern is formed, and contact holes are formed in the respective semiconductor layers to reach impurity regions serving as source regions or drain regions. The contact hole is formed by a dry etching method. In this case, CF ₄ as etching gas,
The second interlayer insulating film 939 made of an organic resin material is first etched using a mixed gas of O ₂ and He, and then the first interlayer insulating film 937 is etched using CF ₄ and O ₂ as etching gases. Further, in order to increase the selectivity with the semiconductor layer, the etching gas is changed to CHF _3.
The contact hole can be formed by etching the third shape gate insulating film 906 by switching to the above.

Then, a conductive metal film is formed by a sputtering method or a vacuum evaporation method, patterned with a mask, and then etched to form connection wirings 940 to 947 reaching the impurity regions. Although not shown, in this embodiment, this connection wiring is formed by using a Ti film with a film thickness of 50 nm and a film thickness of 50 nm.
A laminated film of 0 nm alloy film (alloy film of Al and Ti) was formed.

Next, a transparent conductive film is formed thereon with a thickness of 80 to 120 nm and patterned to form a pixel electrode 948 (FIG. 11A). In this embodiment, an indium tin oxide (ITO) film or indium oxide with 2 to 20% zinc oxide (Z
A transparent conductive film mixed with nO) is used.

Further, the pixel electrode 948 is formed in contact with the connection wiring 946 so as to be electrically connected to the drain region of the transistor Tr2.

FIG. 12 is a top view of a pixel at the time when the process up to FIG. 11A is completed.
Note that the insulating film and the interlayer insulating film are omitted in order to clarify the position of the wiring and the position of the semiconductor layer. A cross-sectional view taken along the line AA ′ in FIG. 12 corresponds to the portion indicated by AA ′ in FIG.

FIG. 13 is a cross-sectional view taken along the line BB ′ of FIG. The transistor Tr4 is connected to the scanning line 9
74 has a gate electrode 975 which is a part of 74, and the gate electrode 975 is a transistor Tr
5 gate electrode 920 is also connected. Further, one of the impurity regions 977 in the semiconductor layer of the transistor Tr4 is connected to the connection wiring 942 functioning as the signal line Si, and the other is connected to the connection wiring 971.

The transistor Tr1 includes a gate electrode 976, and the gate electrode 976 is also connected to the gate electrode 922 of the transistor Tr2. Further, one of the impurity regions 978 in the semiconductor layer of the transistor Tr1 is connected to the connection wiring 971, and the other is connected to the connection wiring 943 functioning as the power supply line Vi.

The connection wiring 943 is an impurity region 93 common to the transistors Tr2 and Tr3.
4a and the gate electrode 922 of the transistor Tr2.

Reference numeral 970 denotes a storage capacitor, which includes a semiconductor layer 972, a gate insulating film 906, and a capacitor wiring 973. The impurity region 979 included in the semiconductor layer 972 is connected to a connection wiring 947 that functions as a power supply line.

Next, as illustrated in FIG. 11B, a third interlayer insulating film 949 having an opening at a position corresponding to the pixel electrode 948 is formed. The third interlayer insulating film 949 has an insulating property, functions as a bank, and has a role of separating organic light emitting layers of adjacent pixels. In this embodiment, a third interlayer insulating film 949 is formed using a resist.

In this embodiment, the thickness of the third interlayer insulating film 949 is set to about 1 μm, and the opening is formed in the pixel electrode 9.
It is formed so as to have a so-called reverse taper shape that becomes wider as it approaches 48. This is formed by depositing a resist, covering the portion other than the portion where the opening is to be formed with a mask, irradiating with UV light and exposing, and removing the exposed portion with a developer.

As in this example, by forming the third interlayer insulating film 949 in a reverse taper shape, when the organic light emitting layer is formed in a later process, the organic light emitting layer is divided between adjacent pixels. Even if the organic light emitting layer and the third interlayer insulating film 949 have different coefficients of thermal expansion, the organic light emitting layer can be prevented from cracking or peeling.

In the present embodiment, a film made of a resist is used as the third interlayer insulating film. However, in some cases, polyimide, polyamide, acrylic, BCB (benzocyclobutene) is used.
A silicon oxide film or the like can also be used. The third interlayer insulating film 949 may be either an organic material or an inorganic material as long as it is an insulating material.

Next, the organic light emitting layer 950 is formed by an evaporation method, and further, a cathode (MgAg electrode) 951 and a protective electrode 952 are formed by an evaporation method. At this time, it is preferable that the pixel electrode 948 is subjected to heat treatment to completely remove moisture before forming the organic light emitting layer 950 and the cathode 951. In this embodiment, the MgAg electrode is used as the cathode of the OLED, but other known materials may be used.

Note that a known material can be used for the organic light emitting layer 950. In this embodiment, a hole transporting layer and a light emitting layer
The organic light emitting layer is used as a two-layer structure. However, there are cases where either a hole injection layer, an electron injection layer, or an electron transport layer is provided. As described above, various examples of combinations have already been reported, and any of the configurations may be used.

In this embodiment, polyphenylene vinylene is formed by a vapor deposition method as a hole transport layer. As the light emitting layer, polyvinylcarbazole and 1,3,4-oxadiazole derivative P
A material obtained by molecularly dispersing 30 to 40% of BD is formed by a vapor deposition method, and about 1% of coumarin 6 is added as a green emission center.

In addition, the protective electrode 952 can protect the organic light emitting layer 950 from moisture and oxygen; however, a protective film 953 is more preferably provided. In this embodiment, a 300 nm thick silicon nitride film is provided as the protective film 953. This protective film may be continuously formed after the protective electrode 952 without being released to the atmosphere.

The protective electrode 952 is provided in order to prevent the cathode 951 from being deteriorated, and a metal film mainly composed of aluminum is typically used. Of course, other materials may be used. In addition, since the organic light emitting layer 950 and the cathode 951 are very sensitive to moisture, it is desirable that the protective electrode 952 is continuously formed without being released to the atmosphere to protect the organic light emitting layer from the outside air.

The film thickness of the organic light emitting layer 950 is 10 to 400 [nm] (typically 60 to 150 [nm]),
The thickness of the cathode 951 may be 80 to 200 [nm] (typically 100 to 150 [nm]).

Thus, a light emitting device having a structure as shown in FIG. 11B is completed. The pixel electrode 948
The portion 954 where the organic light emitting layer 950 and the cathode 951 overlap corresponds to the OLED.

A p-channel TFT 960 and an n-channel TFT 961 are TFTs included in the driver circuit and form a CMOS. The transistor Tr2 and the transistor Tr5 are TFTs included in the pixel portion, and the TFT of the driver circuit and the TFT of the pixel portion can be formed over the same substrate.

Note that in the case of a light emitting device using OLED, the power supply voltage of the driving circuit is about 5 to 6 V, and about 10 V at the maximum is sufficient, so that deterioration due to hot electrons in the TFT is not a problem. Further, since it is necessary to operate the driving circuit at high speed, it is preferable that the gate capacitance of the TFT is small. Therefore, as in this embodiment, in the driving circuit of the light emitting device using the OLED, the second impurity region 929 and the fourth impurity region 933 included in the semiconductor layer of the TFT are used.
It is preferable that b does not overlap with the gate electrodes 918 and 919, respectively.

The manufacturing method of the light-emitting device of the present invention is not limited to the manufacturing method described in this embodiment.
The light emitting device of the present invention can be manufactured using a known method.

  In this embodiment, a method for manufacturing a light-emitting device, which is different from that in Embodiment 1, will be described.

The steps until the second interlayer insulating film 939 is formed are the same as those in the fifth embodiment. FIG.
), After forming the second interlayer insulating film 939, a passivation film 939 is formed so as to be in contact with the second interlayer insulating film 939.

In the passivation film 939, the moisture contained in the second interlayer insulating film 939 is used as the pixel electrode 9.
48 and the organic light emitting layer 950 through the third interlayer insulating film 982 are effectively prevented. In the case where the second interlayer insulating film 939 includes an organic resin material, it is particularly effective to provide the passivation film 939 because the organic resin material contains a large amount of moisture.

  In this embodiment, a silicon nitride film is used as the passivation film 939.

Thereafter, a resist mask having a predetermined pattern is formed, and contact holes are formed in the respective semiconductor layers to reach impurity regions serving as source regions or drain regions. The contact hole is formed by a dry etching method. In this case, CF ₄ as etching gas,
The second interlayer insulating film 939 made of an organic resin material is first etched using a mixed gas of O ₂ and He, and then the first interlayer insulating film 937 is etched using CF ₄ and O ₂ as etching gases. Further, in order to increase the selectivity with the semiconductor layer, the etching gas is changed to CHF _3.
The contact hole can be formed by etching the third shape gate insulating film 906 by switching to the above.

Then, a conductive metal film is formed by sputtering or vacuum vapor deposition, patterned with a mask, and then etched to form connection wirings 940 to 947.
Although not shown, in this embodiment, the wiring is formed by a Ti film having a thickness of 50 nm and a thickness of 500 nm.
And a laminated film of an alloy film (alloy film of Al and Ti).

Next, a transparent conductive film is formed thereon with a thickness of 80 to 120 nm and patterned to form a pixel electrode 948 (FIG. 14A). In this embodiment, an indium tin oxide (ITO) film or indium oxide with 2 to 20% zinc oxide (Z
A transparent conductive film mixed with nO) is used.

Further, the pixel electrode 948 is formed in contact with the connection wiring 946 so as to be electrically connected to the drain region of the transistor Tr2.

Next, as shown in FIG. 14B, a third interlayer insulating film 982 having an opening at a position corresponding to the pixel electrode 948 is formed. In this embodiment, when the opening is formed, a tapered side wall is formed by using a wet etching method. Unlike the case shown in the first embodiment, the third
Since the organic light emitting layer formed on the interlayer insulating film 982 is not divided, the deterioration of the organic light emitting layer due to the step becomes a significant problem unless the side wall of the opening is sufficiently gentle.
Caution must be taken.

In this embodiment, a film made of silicon oxide is used as the third interlayer insulating film 982, but an organic resin film such as polyimide, polyamide, acrylic, or BCB (benzocyclobutene) is used in some cases. You can also.

Then, before forming the organic light emitting layer 950 on the third interlayer insulating film 982, the surface of the third interlayer insulating film 982 is subjected to plasma treatment using argon, and the surface of the third interlayer insulating film 982 is formed. It is preferable to make it dense. With the above structure, moisture can be prevented from entering the organic light emitting layer 950 from the third interlayer insulating film 982.

Next, the organic light emitting layer 950 is formed by an evaporation method, and further, a cathode (MgAg electrode) 951 and a protective electrode 952 are formed by an evaporation method. At this time, it is preferable that the pixel electrode 948 is subjected to heat treatment to completely remove moisture before forming the organic light emitting layer 950 and the cathode 951. In this embodiment, the MgAg electrode is used as the cathode of the OLED, but other known materials may be used.

Note that a known material can be used for the organic light emitting layer 950. In this embodiment, a hole transporting layer and a light emitting layer
The organic light emitting layer is used as a two-layer structure. However, there are cases where either a hole injection layer, an electron injection layer, or an electron transport layer is provided. As described above, various examples of combinations have already been reported, and any of the configurations may be used.

In this embodiment, polyphenylene vinylene is formed by a vapor deposition method as a hole transport layer. As the light emitting layer, polyvinylcarbazole and 1,3,4-oxadiazole derivative P
A material obtained by molecularly dispersing 30 to 40% of BD is formed by a vapor deposition method, and about 1% of coumarin 6 is added as a green emission center.

In addition, the protective electrode 952 can protect the organic light emitting layer 950 from moisture and oxygen; however, a protective film 953 is more preferably provided. In this embodiment, a 300 nm thick silicon nitride film is provided as the protective film 953. This protective film may be continuously formed after the protective electrode 952 without being released to the atmosphere.

The protective electrode 952 is provided in order to prevent the cathode 951 from being deteriorated, and a metal film mainly composed of aluminum is typically used. Of course, other materials may be used. In addition, since the organic light emitting layer 950 and the cathode 951 are very sensitive to moisture, it is desirable that the protective electrode 952 is continuously formed without being released to the atmosphere to protect the organic light emitting layer from the outside air.

The film thickness of the organic light emitting layer 950 is 10 to 400 [nm] (typically 60 to 150 [nm]),
The thickness of the cathode 951 may be 80 to 200 [nm] (typically 100 to 150 [nm]).

Thus, a light emitting device having a structure as shown in FIG. 14B is completed. The pixel electrode 948
The portion 954 where the organic light emitting layer 950 and the cathode 951 overlap corresponds to the OLED.

A p-channel TFT 960 and an n-channel TFT 961 are TFTs included in the driver circuit and form a CMOS. The transistors Tr2, Tr3, and Tr5 are TFTs included in the pixel portion, and the TFT of the driver circuit and the TFT of the pixel portion can be formed over the same substrate.

The manufacturing method of the light-emitting device of the present invention is not limited to the manufacturing method described in this embodiment.
The light emitting device of the present invention can be manufactured using a known method.

In this embodiment, a top view of the pixel shown in FIG. 7 will be described. FIG. 15 shows a top view of the pixel of this embodiment. Note that various insulating films such as an interlayer insulating film and a gate insulating film were omitted in order to clarify the positions of wirings and semiconductor layers. Further, wirings formed in the same layer are indicated by the same hatch. Further, FIG. 15 corresponds to a top view of the pixel after the pixel electrode is formed and before the organic light emitting layer is formed.

The pixel shown in FIG. 15 has one scanning line 211, one signal line 210, and one power supply line 217. The portions 212 and 213 of the scanning line 211 correspond to the gate electrodes of the transistor Tr4 and the transistor Tr5, respectively.

One of the source region and the drain region of the transistor Tr4 is connected to the signal line 210, and the other is connected to the drain region of the transistor Tr1 through the connection wiring 215. One of the source region and the drain region of the transistor Tr5 is the connection wiring 21.
5 is connected to the drain region of the transistor Tr1 through 5 and the other is connected wiring 2
14 is connected to the capacitor wiring 216 through 14.

The gate electrode 219 of the transistor Tr1 and the gate electrode 220 of the transistor Tr2 are connected to each other. Then, the gate electrodes 219 and 2 of the transistors Tr1 and Tr2
20 is connected to the drain region of the transistor Tr2 via the connection wiring 221.

The source region of the transistor Tr1 is connected to the power supply line 217. Further, the source region of the transistor Tr2 is connected to the power supply line 217.

A part 218 of the capacitor wiring 216 corresponds to the gate electrode of the transistor Tr3. One of the source region and the drain region of the transistor Tr3 is connected to the drain region of the transistor Tr2, and the other is connected to the pixel electrode 223 through the connection wiring 222.

Reference numeral 224 denotes an active layer for forming a storage capacitor, and an active layer 2 for forming a storage capacitor.
A capacitor wiring 216 is formed on 24 with a gate insulating film (not shown) interposed therebetween.
A portion where the active layer 219 for forming the storage capacitor, the gate insulating film, and the capacitor wiring 216 overlap corresponds to the storage capacitor 205. Note that a power supply line 217 is formed on the capacitor wiring 216 with an interlayer insulating film (not shown) interposed therebetween. This capacitive wiring 216;
A capacitor formed in a portion where the interlayer insulating film and the power supply line 217 overlap may be used as the storage capacitor 205.

By forming the power supply line 217 above a partition wall (bank) that separates pixels, a storage capacitor and a power supply line can be formed without reducing the aperture ratio.

The top view of the pixel shown in this embodiment is merely an example of the structure of the present invention, and the top view of the pixel shown in FIG. 7 is not limited to the structure shown in this embodiment. Note that this embodiment can be implemented by being freely combined with Embodiment 1 or 2.

In this embodiment, a top view of the pixel shown in FIG. 8 will be described. FIG. 16 shows a top view of the pixel of this embodiment. Note that various insulating films such as an interlayer insulating film and a gate insulating film were omitted in order to clarify the positions of wirings and semiconductor layers. Further, wirings formed in the same layer are indicated by the same hatch. Further, FIG. 16 corresponds to a top view of the pixel after the pixel electrode is formed and before the organic light emitting layer is formed.

The pixel shown in FIG. 16 has one scanning line 311, one signal line 310, and one power supply line 317. The parts 312 and 313 of the scanning line 311 correspond to the gate electrodes of the transistor Tr4 and the transistor Tr5, respectively.

One of the source region and the drain region of the transistor Tr4 is connected to the signal line 310, and the other is connected to the capacitor wiring 316 via the connection wiring 315. One of the source region and the drain region of the transistor Tr5 is connected to the drain region of the transistor Tr1 through the connection wiring 314, and the other is connected to the capacitor wiring 316 through the connection wiring 315.

The gate electrode 319 of the transistor Tr1 and the gate electrode 320 of the transistor Tr2 are connected to each other. Then, the gate electrodes 319 and 3 of the transistors Tr1 and Tr2
20 is connected to the drain region of the transistor Tr2 via the connection wiring 321.

The source region of the transistor Tr1 is connected to the power supply line 317. Further, the source region of the transistor Tr2 is connected to the power supply line 317.

A part 318 of the capacitor wiring 316 corresponds to the gate electrode of the transistor Tr3. One of the source region and the drain region of the transistor Tr3 is connected to the drain region of the transistor Tr2, and the other is connected to the pixel electrode 323 through the connection wiring 322.

Reference numeral 324 denotes an active layer for forming a storage capacitor, and the active layer 3 for forming a storage capacitor.
A capacitor wiring 316 is formed on 24 with a gate insulating film (not shown) interposed therebetween.
A portion where the active layer 319 for forming the storage capacitor, the gate insulating film, and the capacitor wiring 316 overlap corresponds to the storage capacitor 305. Note that a power supply line 317 is formed over the capacitor wiring 316 with an interlayer insulating film (not shown) interposed therebetween. This capacitive wiring 316,
A capacitor formed in a portion where the interlayer insulating film and the power supply line 317 overlap may be used as the storage capacitor 305.

The top view of the pixel shown in this embodiment is only an example of the structure of the present invention, and the top view of the pixel shown in FIG. 8 is not limited to the structure shown in this embodiment. Note that this embodiment can be implemented by being freely combined with Embodiment 1 or 2.

  In this example, a light-emitting device having a configuration different from that of Example 1 will be described.

FIG. 27 shows a cross-sectional view of the pixel portion of the light emitting device of this embodiment. 27 includes a red pixel (R pixel) 800r, a green pixel (G pixel) 800g, and a blue pixel (G pixel).
B pixel) 800b. Note that the structure of this embodiment can be used not only for a color display light-emitting device but also for a light-emitting device for displaying a monochrome image.

Transistors Tr2 and Tr3 are formed on a substrate 830 for each color pixel. Note that in the light-emitting device of the present invention, at least the transistors Tr1, Tr2, Tr3, T are included in each pixel.
Although r4 and Tr5 are formed, FIG. 27 shows only the transistor Tr2.

Pixel electrodes 802r, 802g, and 802b (all together referred to as a pixel electrode 802) are connected to drain regions 809r, 809g, and 809b of each transistor Tr3 through contact holes formed in the gate insulating film 811 and the interlayer insulating film 807. Each is connected.

In this embodiment, the pixel electrode is a cathode and does not transmit light. In this embodiment, an MgAg electrode is used as the cathode of the OLED, but other known materials may be used.

Then, the interlayer insulating film 80 that covers the pixel electrodes 802r, 802g, and 802b and the interlayer insulating film 807 and has an opening 850 at a position overlapping the pixel electrodes 802r, 802g, and 802b.
5 is formed. In this embodiment, a film made of silicon oxide is used as the interlayer insulating film 805, but an organic resin film such as polyimide, polyamide, acrylic, or BCB (benzocyclobutene) may be used depending on circumstances.

Next, organic light emitting layers 803r, 803g, and 803b (all together referred to as an organic light emitting layer 803) are formed so as to be in contact with the pixel electrodes 802r, 802g, and 802b in the openings of the interlayer insulating film 805. At this time, the organic light emitting layers 803r, 803g, and 803b are formed by using a metal mask and sequentially using a vapor deposition method for each color. And each organic light emitting layer 803r, 803
g and 803b are also expected to be formed slightly around the portion other than the opening of the third interlayer insulating film 805 at the time of vapor deposition, but in the opening of the third interlayer insulating film 805 as much as possible. Only to be formed.

Then, a conductive layer 806 having a metal is formed in a portion other than the opening of the interlayer insulating film 805 by vapor deposition. The material of the conductive layer 806 is desirably a low resistance metal. Alternatively, a plurality of conductive layers may be stacked and used as one conductive layer. Although copper is used in this embodiment, the material of the conductive layer 806 is not limited to this, and any known metal material having a resistance lower than that of the counter electrode can be used. In this embodiment, the formation of the conductive layer 806 can reduce the resistance of a counter electrode formed later, which can be said to be suitable for increasing the size of a substrate.

Next, a counter electrode 804 made of a transparent conductive film is formed so as to cover the organic light emitting layers 803r, 803g, and 803b and the conductive layer 806. In this embodiment, ITO is used as the transparent conductive film. ITO can be formed by vapor deposition. In this embodiment, the case of forming using an ion plating method will be described.

The ion plating method is one of vapor phase surface treatment techniques classified as a vapor deposition method. A vapor deposition material evaporated by some method is ionized or excited by high-frequency plasma or vacuum discharge, and a negative potential is applied to a substrate to be vapor deposited. Is applied to accelerate the ions to adhere to the substrate.

As specific conditions for forming the counter electrode using the ion plating method, 0.0
It is desirable to perform deposition while maintaining the substrate temperature at 100 to 300 ° C. in an inert gas atmosphere of 1 to 1 Pa. It is desirable to use ITO as an evaporation source having a sintered density of 70% or more. Note that the practitioner can appropriately select the optimum conditions for using the ion plating method.

In addition, ionization or excitation of the deposition material using high-frequency plasma can increase the rate of ionization or excitation of the deposition material, and the ionized or excited deposition material is in a high energy state, so that it is fast. Bonding with oxygen can be sufficiently performed while maintaining the evaporation rate. For this reason, it is possible to form a high-quality film at a high speed.

In this embodiment, the above-described ion plating method is used, and the counter electrode 804 made of a transparent conductive film is used.
Was formed with a thickness of 80 to 120 nm. In this embodiment, an indium tin oxide (ITO) film or a transparent conductive film in which 2 to 20% zinc oxide (ZnO) is mixed with indium oxide is used as the transparent electrode.

In addition, the formation method of the counter electrode of a present Example is not limited to the ion plating method mentioned above. However, the film formed using the ion plating method has high adhesion, and an ITO film having high crystallinity can be formed even at a relatively low temperature, so that the resistance of ITO can be lowered. Furthermore, uniform film formation over a relatively large area is possible, which can be said to be suitable for increasing the size of the substrate.

In each pixel, R OLED 801r, G OLED 801g, and B OLED
801b is completed. Each OLED has pixel electrodes 802r, 802g, and 802b, organic light emitting layers 803r, 803g, and 803b, and a counter electrode 804, respectively.

FIG. 28 shows a top view of a substrate (element substrate) on which the transistor of this example is formed. A pixel portion 831, a scan line driver circuit 832, a signal line driver circuit 833, and a terminal 834 are provided over the substrate 830.
The state where is formed is shown. The terminal 834 is connected to each drive circuit, the power supply line formed in the pixel portion, and the counter electrode by a lead wiring 835.

In addition, an IC chip on which a CPU, a memory, etc. are formed if necessary is a COG (Chip on Gl
ass) method or the like.

The OLED is formed between the conductive layers 806 and its structure is shown in FIG.
The pixel electrode 802 is an electrode corresponding to each pixel, and is formed between the conductive layers 806. An organic compound layer 803 is formed between the conductive layers 806 as an upper layer, and is continuously formed in a stripe shape over the plurality of pixel electrodes 802.

The counter electrode 804 is formed on the organic compound layer 803 and the conductive layer 806 and is formed so as to be in contact with the conductive layer 806 in the same manner.

The lead wiring 835 is formed in the same layer as the scanning line (not shown) and is not in direct contact with the conductive layer 806. The lead wiring 835 and the counter electrode 804 are in contact with each other at the overlapping portion.

The configuration of the present embodiment can be implemented by freely combining with the third or fourth embodiment.

In this embodiment, a structure of a driver circuit (a signal line driver circuit and a scan line driver circuit) included in a light-emitting device driven by the digital driving method of the present invention will be described.

FIG. 17 is a block diagram illustrating the configuration of the signal line driver circuit 601. 602 is a shift register,
Reference numeral 603 denotes a storage circuit A, reference numeral 604 denotes a storage circuit B, and reference numeral 605 denotes a constant current circuit.

A clock signal CLK and a start pulse signal SP are input to the shift register 602. In addition, a digital video signal (Digital Video) is stored in the memory circuit A602.
Signals) is input, and the latch signal (Latch S) is input to the memory circuit B603.
signals) is input. Constant signal current Ic output from constant current circuit 604
Is input to the signal line.

  FIG. 18 shows a more detailed configuration of the signal line driver circuit 601.

A clock signal CLK and a start pulse signal SP from a predetermined wiring to the shift register 602
Are input to generate a timing signal. The timing signal is input to each of the plurality of latches A (LATA_1 to LATA_x) included in the memory circuit A603. Note that at this time, the timing signal generated in the shift register 602 is buffered and amplified by a buffer or the like, and then a plurality of latches A (LATA — 1 to LAT) included in the memory circuit A 603 are included.
A_x) may be inputted respectively.

When a timing signal is input to the memory circuit A 603, a 1-bit digital video signal input to the video signal line 610 is sequentially input into a plurality of latches A in synchronization with the timing signal.
It is written and held in each of (LATA_1 to LATA_x).

In this embodiment, when a digital video signal is taken into the memory circuit A603, the digital video signal is sequentially input to the plurality of latches A (LATA_1 to LATA_x) included in the memory circuit A603. It is not limited to.
A plurality of stages of latches included in the memory circuit A 603 may be divided into several groups, and so-called divided driving may be performed in which digital video signals are input simultaneously in parallel for each group. Note that the number of groups at this time is called the number of divisions. For example, when the latches are divided into groups for every four stages, it is said that the driving is divided into four.

The time until the digital video signal is completely written to the latches of all the stages of the memory circuit A 603 is called a line period. Actually, the line period may include a period in which a horizontal blanking period is added to the line period.

When one line period ends, a plurality of latches B (LATB_1) included in the memory circuit B604 are provided.
˜LATB_x) is supplied with a latch signal via a latch signal line 609. At this moment, the plurality of latches A (LATA — 1 to LAT) included in the memory circuit A 603
The digital video signals held in A_x) are written and held all at once in the plurality of latches B (LATB_1 to LATB_x) included in the memory circuit B604.

After the digital video signal has been sent to the storage circuit B 604, the next 1-bit digital video signal is sequentially written on the basis of the timing signal from the shift register 602.

During the second line period, the digital video signal written and held in the memory circuit B 604 is input to the constant current circuit 605.

The constant current circuit 605 has a plurality of current setting circuits (C1 to Cx). Current setting circuit (
When a digital video signal is input to each of C1 to Cx), a constant current Ic flows through the signal line depending on 1 or 0 information included in the digital video signal, or the power supply lines V1 to Vx pass through the signal line. A potential is applied or one of them is selected.

FIG. 19 shows an example of a specific configuration of the current setting circuit C1. The current setting circuits C2 to Cx
Have the same configuration.

The current setting circuit C1 includes a constant current source 631 and four transmission gates SW1 to SW.
4 and two inverters Inb1 and Inb2. Note that the polarity of the transistor 650 included in the constant current source 631 is the same as the polarity of the transistors Tr1 and Tr2 included in the pixel.

By the digital video signal output from LATB_1 included in the memory circuit B604,
Switching of SW1 to SW4 is controlled. The digital video signal input to SW1 and SW3 and the digital video signal input to SW2 and SW4 are Inb1, In
Inverted by b2. Therefore, when SW1 and SW3 are on, SW2 and SW4
Is off, and SW2 and SW4 are on when SW1 and SW3 are off.

When SW1 and SW3 are on, a current Ic having a predetermined value other than 0 is input from the constant current source 631 to the signal line S1 via SW1 and SW3.

Conversely, when SW2 and SW4 are on, the current Ic from the constant current source 631 is dropped to the ground via SW2. Further, the power supply potential of the power supply lines V1 to Vx is changed to the signal line S via SW4.
1 and Ic≈0.

Referring to FIG. 18 again, the above operation is simultaneously performed in all the current setting circuits (C1 to Cx) included in constant current circuit 605 within one line period. Therefore, the value of the signal current Ic input to all the signal lines is selected by the digital video signal.

  Next, the configuration of the scanning line driving circuit will be described.

  FIG. 20 is a block diagram illustrating a configuration of the scanning line driving circuit 641.

The scanning line driver circuit 641 includes a shift register 642 and a buffer 643, respectively. In some cases, a level shifter may be provided.

In the scan line driver circuit 641, when the clock CLK and the start pulse signal SP are input to the shift register 642, a timing signal is generated. The generated timing signal is buffered and amplified in the buffer 643 and supplied to the corresponding scanning line.

The scanning lines are connected to the gate electrodes of the first switching transistor and the second switching transistor of pixels for one line. Since the first switching transistor and the second switching transistor of the pixels for one line must be turned on all at once, a buffer 643 that can flow a large current is used.

The drive circuit used in the present invention is not limited to the configuration shown in this embodiment. Furthermore, the constant current circuit shown in this embodiment is not limited to the configuration shown in FIG. The constant current circuit used in the present invention can select any one of the binary values that can be taken by the signal current Ic by a digital video signal, and can cause any signal current having the selected value to flow through the signal line. You may have a structure.

  The structure of a present Example can be implemented combining freely with Examples 1-5.

In this embodiment, the order in which the subframe periods SF1 to SFn appear in the driving method of the light emitting device of the present invention corresponding to the n-bit digital video signal will be described.

FIG. 21 shows a timing at which n writing periods (Ta1 to Tan) and n display periods (Td1 to Tdn) appear in one frame period. The horizontal axis indicates time, and the vertical axis indicates the position of the scanning line included in the pixel. The detailed operation of each pixel may be referred to the embodiment, and is omitted here.

In the driving method of this embodiment, the subframe period (SFn in this embodiment) having the longest display period in one frame period is not provided at the beginning and end of one frame period. In other words, another subframe period included in the same frame period appears before and after the subframe period having the longest display period in one frame period.

With the above-described configuration, it is possible to make it difficult for human eyes to recognize display unevenness that occurs due to adjacent display periods that emit light between adjacent frame periods when intermediate grayscale display is performed.

The configuration of this embodiment is effective when n ≧ 3. In addition, this example is described in Examples 1 to
The present invention can be implemented in combination with Embodiment 6.

In this embodiment, an example in which the light-emitting device of the present invention is driven using a 6-bit digital video signal will be described.

FIG. 22 shows six writing periods (Ta1 to Ta6) in one frame period.
And six display periods (Td1 to Td6) appear. The horizontal axis indicates time, and the vertical axis indicates the position of the scanning line included in the pixel. The detailed operation of each pixel may be referred to the embodiment, and is omitted here.

When driving using a 6-bit digital video signal, at least six subframe periods SF1 to SF6 are provided in one frame period.

The subframe periods SF1 to SF6 correspond to each bit of the 6-bit digital signal. The subframe periods SF1 to SF6 include six write periods (Ta1 to Ta6).
And six display periods (Td1 to Td6).

Write period Tam and display period T corresponding to the m-th bit (m is an arbitrary number from 1 to 6)
The subframe period having dm is SFm. Next to the writing period Tam, a display period corresponding to the same number of bits, in this case Tdm, appears.

By repeatedly appearing the writing period Ta and the display period Td in one frame period, 1
It is possible to display two images.

The length of the display period SF1~SF6 is, SF1: SF2: ...: SF6 = 2 0: 2 1: ...: 2 5
Meet.

In the driving method of the present invention, gradation is displayed by controlling the sum of the lengths of the display periods during which light is emitted in one frame period.

In addition, the structure of a present Example can be implemented combining freely with Examples 1-7.

In this embodiment, an example of a driving method using an n-bit digital video signal different from those in FIGS. 6 and 21 will be described.

In FIG. 23, in one frame period, n + 1 writing periods (Ta1 to Ta (n + 1
)) And n + 1 display periods (Td1 to Td (n + 1)) appear.
The horizontal axis indicates time, and the vertical axis indicates the position of the scanning line included in the pixel. The detailed operation of each pixel may be referred to the embodiment, and is omitted here.

In this embodiment, n + 1 subframe periods SF1 to SFn + 1 are provided in one frame period corresponding to an n-bit digital video signal. And subframe periods SF1-S
Fn + 1 has n + 1 writing periods (Ta1 to Ta (n + 1)) and n + 1 display periods (Td1 to Td (n + 1)).

A subframe period having a writing period Tam (m is an arbitrary number from 1 to n + 1) and a display period Tdm is SFm. Next to the writing period Tam, a display period corresponding to the same number of bits, in this case Tdm, appears.

The subframe periods SF1 to SFn-1 correspond to each bit of the digital signal of 1 to (n-1) bits. The subframe periods SFn and SF (n + 1) correspond to the nth bit digital video signal.

In this embodiment, the subframe period SF corresponding to the digital video signal of the same bit is used.
n and SF (n + 1) do not appear consecutively. In other words, another subframe period is provided between subframe periods SFn and SF (n + 1) corresponding to digital video signals of the same bit.

By repeatedly appearing the writing period Ta and the display period Td in one frame period, 1
It is possible to display two images.

The length of the display periods SF1 to SFn + 1 is SF1: SF2: ... :( SFn + SF (n + 1
)) = 2 ⁰ : 2 ¹ :...: 2 ⁿ⁻¹ is satisfied.

In the driving method of the present invention, gradation is displayed by controlling the sum of the lengths of the display periods during which light is emitted in one frame period.

In the present embodiment, the display unevenness caused by the adjacent display periods emitting light in the adjacent frame periods when the display of the intermediate gradation is performed with the above configuration is shown in FIGS.
Compared to the case, it can be difficult to be recognized by human eyes.

In this embodiment, the case where there are two subframe periods corresponding to the same bit has been described, but the present invention is not limited to this. Three or more subframe periods corresponding to the same bit may be provided in one frame period.

In this embodiment, a plurality of subframe periods corresponding to the most significant bit digital video signal are provided. However, the present invention is not limited to this. A plurality of subframe periods corresponding to digital video signals of bits other than the most significant bit may be provided. Further, the number of bits provided with a plurality of corresponding subframe periods is not limited to one, and a configuration in which a plurality of subframe periods correspond to each of some bits may be employed.

The configuration of this embodiment is effective when n ≧ 2. In addition, this example is described in Examples 1 to
8 can be combined freely.

In this embodiment, a structure of a signal line driver circuit included in the light-emitting device of the present invention driven by an analog driving method will be described. Note that the structure shown in Embodiment 6 can be used as the structure of the scanning line driver circuit, and thus the description thereof is omitted here.

FIG. 31A is a block diagram of the signal line driver circuit 401 of this embodiment. Reference numeral 402 denotes a shift register, 403 denotes a buffer, 404 denotes a sampling circuit, and 405 denotes a current conversion circuit.

A clock signal (CLK) and a start pulse signal (SP) are input to the shift register 402. When a clock signal (CLK) and a start pulse signal (SP) are input to the shift register 402, a timing signal is generated.

The generated timing signal is amplified or buffer amplified in the buffer 403 and input to the sampling circuit 404. In addition, a level shifter is provided instead of the buffer,
The timing signal may be amplified. Further, both a buffer and a level shifter may be provided.

FIG. 31B illustrates specific structures of the sampling circuit 404 and the current conversion circuit 405.
Note that the sampling circuit 404 is connected to the buffer 403 at a terminal 410.

The sampling circuit 404 is provided with a plurality of switches 411. An analog video signal is input from the video signal line 406 to the sampling circuit 404.
The switch 411 samples the analog video signal in synchronization with the timing signal,
This is input to the subsequent current conversion circuit 405. Note that in FIG. 31B, only the current conversion circuit connected to one of the switches 411 included in the sampling circuit 404 is illustrated as the current conversion circuit 405. However, in FIG. It is assumed that the current conversion circuit 405 as shown in FIG.

In this embodiment, only one transistor is used for the switch 411. However, the switch 411 may be any switch that can sample an analog video signal in synchronization with the timing signal, and is not limited to the configuration of this embodiment.

The sampled analog video signal is input to a current output circuit 412 included in the current conversion circuit 405. The current output circuit 412 outputs a current (signal current) having a value corresponding to the voltage of the input video signal. In FIG. 31, a current output circuit is formed by using an amplifier and a transistor. However, the present invention is not limited to this structure, and a circuit that can output a current having a value corresponding to the voltage of an input signal. I just need it.

The signal current is input to a reset circuit 417 included in the current conversion circuit 405.
The reset circuit 406 includes two analog switches 413 and 414 and an inverter 416.
And a power source 415.

A reset signal (Res) is input to the analog switch 414, and a reset signal (Res) inverted by the inverter 416 is input to the analog switch 413. The analog switch 413 and the analog switch 414 operate in synchronization with the inverted reset signal and the reset signal, respectively, and when one is on, one is off.

When the analog switch 413 is on, the signal current is input to the corresponding signal line. Conversely, when the analog switch 414 is on, the potential of the power source 415 is applied to the signal line, and the signal line is reset. Note that the potential of the power supply 415 is preferably almost the same as the potential of the power supply line provided in the pixel, and the closer the current that can flow to the signal line when the signal line is reset, the better. .

Note that the signal line is desirably reset during the return period. However, if it is outside the period during which the image is displayed, it can be reset to a period other than the blanking period as necessary.

Note that the signal line driver circuit and the scan line driver circuit for driving the light-emitting device of the present invention are not limited to the structures shown in this embodiment. The configuration of the present embodiment can be implemented by freely combining with the configurations shown in the first to ninth embodiments.

In the present invention, by using an organic light emitting material that can utilize phosphorescence from triplet excitons for light emission, the external light emission quantum efficiency can be dramatically improved. Thereby, low power consumption, long life, and light weight of the OLED can be achieved.

Here, a report of using triplet excitons to improve the external emission quantum efficiency is shown.
(T. Tsutsui, C. Adachi, S. Saito, Photochemical Processes in Organized Molecular S
ystems, ed.K.Honda, (Elsevier Sci.Pub., Tokyo, 1991) p.437.)

The molecular formula of the organic light-emitting material (coumarin dye) reported by the above paper is shown below.

(MABaldo, DFO'Brien, Y.You, A.Shoustikov, S.Sibley, METhompson, SRForr
est, Nature 395 (1998) p.151.)

  The molecular formula of the organic light-emitting material (Pt complex) reported by the above paper is shown below.

(MABaldo, S. Lamansky, PEBurrrows, METhompson, SRForrest, Appl.Phys.Let
t., 75 (1999) p.4.) (T. Tsutsui, M.-J. Yang, M. Yahiro, K. Nakamura, T. Watanabe, T.ts
(uji, Y. Fukuda, T. Wakimoto, S. Mayaguchi, Jpn. Appl. Phys., 38 (12B) (1999) L1502.)

The molecular formula of the organic light-emitting material (Ir complex) reported by the above paper is shown below.

As described above, if phosphorescence emission from triplet excitons can be used, in principle, it is possible to realize an external emission quantum efficiency that is 3 to 4 times higher than that in the case of using fluorescence emission from singlet excitons.

In addition, the structure of a present Example can be implemented in combination with any structure of Example 1- Example 10 freely.

In this example, an example in which a light-emitting device is manufactured using the present invention will be described with reference to FIGS.

24 is a top view of a light-emitting device formed by sealing an element substrate over which a transistor is formed with a sealing material, and FIG. 24B is a cross-sectional view taken along line AA ′ in FIG. FIG. 24C is a cross-sectional view taken along the line BB ′ of FIG.

A sealant 4009 is provided so as to surround the pixel portion 4002 provided over the substrate 4001, the signal line driver circuit 4003, and the first and second scan line driver circuits 4004a and 4004b. In addition, a sealing material 4008 is provided over the pixel portion 4002, the signal line driver circuit 4003, and the first and second scan line driver circuits 4004a and 4004b. Therefore, the pixel unit 40
02, the signal line driver circuit 4003, and the first and second scan line driver circuits 4004a and 4004b are formed of a filler 4210 by a substrate 4001, a sealant 4009, and a sealant 4008.
It is sealed with.

In addition, the pixel portion 4002 provided over the substrate 4001, the signal line driver circuit 4003, and the first
The second scan line driver circuits 4004a and 4004b have a plurality of TFTs. FIG.
) Typically, a driving TFT included in the signal line driver circuit 4003 formed over the base film 4010 (here, an n-channel TFT and a p-channel TFT are illustrated) 420.
1 and a current control TFT (transistor Tr3) 4202 included in the pixel portion 4002 are shown.

In this embodiment, a p-channel TFT or an n-channel TFT manufactured by a known method is used for the driving TFT 4201, and a p-channel TFT manufactured by a known method is used for the current control TFT 4202. The pixel portion 4002 includes a current control TFT 42.
A storage capacitor (not shown) connected to the gate of 02 is provided.

On the driving TFT 4201 and the current control TFT 4202, an interlayer insulating film (flattening film) 43 is formed.
01 is formed, and a pixel electrode (anode) 4203 electrically connected to the drain of the current control TFT 4202 is formed thereon. As the pixel electrode 4203, a transparent conductive film having a large work function is used. As the transparent conductive film, a compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, or indium oxide can be used. Moreover, you may use what added the gallium to the said transparent conductive film.

An insulating film 4302 is formed over the pixel electrode 4203, and an opening is formed over the pixel electrode 4203 in the insulating film 4302. In this opening, an organic light emitting layer 4204 is formed on the pixel electrode 4203. A known organic light emitting material or inorganic light emitting material can be used for the organic light emitting layer 4204. In addition, organic light emitting materials are low molecular (monomer)
There are materials and polymer (polymer) materials, either of which may be used.

As a method for forming the organic light emitting layer 4204, a known vapor deposition technique or coating technique may be used.
The structure of the organic light emitting layer may be a laminated structure or a single layer structure by freely combining a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, or an electron injection layer.

On the organic light emitting layer 4204, a cathode 420 made of a light-shielding conductive film (typically a conductive film containing aluminum, copper or silver as a main component or a laminated film of these and another conductive film).
5 is formed. In addition, it is desirable to remove moisture and oxygen present at the interface between the cathode 4205 and the organic light emitting layer 4204 as much as possible. Therefore, it is necessary to devise a method in which the organic light emitting layer 4204 is formed in a nitrogen or rare gas atmosphere and the cathode 4205 is formed without being exposed to oxygen or moisture. In this embodiment, the above-described film formation is possible by using a multi-chamber type (cluster tool type) film formation apparatus. The cathode 4205 is given a predetermined voltage.

As described above, the pixel electrode (anode) 4203, the organic light emitting layer 4204, and the cathode 4205 are used.
An OLED 4303 is formed. A protective film 4303 is formed on the insulating film 4302 so as to cover the OLED 4303. The protective film 4303 is effective in preventing oxygen, moisture, and the like from entering the OLED 4303.

Reference numeral 4005a denotes a routing wiring connected to the power supply line, and a current control TFT 4202 is provided.
Is electrically connected to the source region. The lead wiring 4005 a passes between the sealant 4009 and the substrate 4001 and is electrically connected to the FPC wiring 4301 included in the FPC 4006 through the anisotropic conductive film 4300.

As the sealing material 4008, a glass material, a metal material (typically a stainless steel material), a ceramic material, or a plastic material (including a plastic film) can be used. As a plastic material, FRP (Fiberglass-Reinforced Pla
sticks), PVF (polyvinyl fluoride)
A film, mylar film, polyester film or acrylic resin film can be used. A sheet having a structure in which an aluminum foil is sandwiched between PVF films or mylar films can also be used.

However, when the emission direction of light from the OLED is directed toward the cover material, the cover material must be transparent. In that case, a transparent material such as a glass plate, a plastic plate, a polyester film or an acrylic film is used.

Further, as the filler 4103, in addition to an inert gas such as nitrogen or argon, an ultraviolet curable resin or a thermosetting resin can be used. PVC (polyvinyl chloride), acrylic, polyimide, epoxy resin, silicone resin, PVB (Polyvinyl butyral) or E
VA (ethylene vinyl acetate) can be used. In this example, nitrogen was used as the filler.

Further, in order to expose the filler 4103 to a hygroscopic substance (preferably barium oxide) or a substance that can adsorb oxygen, a recess 400 is formed on the surface of the sealing material 4008 on the substrate 4001 side.
7, a hygroscopic substance or a substance 4207 capable of adsorbing oxygen is disposed. Then, the concave cover material 4208 is prevented so that the hygroscopic substance or the substance 4207 capable of adsorbing oxygen does not scatter.
Thus, the hygroscopic substance or the substance 4207 capable of adsorbing oxygen is held in the recess 4007. Note that the concave cover material 4208 has a fine mesh shape, and is configured to allow air and moisture to pass therethrough but not a hygroscopic substance or a substance 4207 capable of adsorbing oxygen. By providing the hygroscopic substance or the substance 4207 capable of adsorbing oxygen, deterioration of the OLED 4303 can be suppressed.

As shown in FIG. 24C, the wiring 4 is formed at the same time as the pixel electrode 4203 is formed.
A conductive film 4203a is formed so as to be in contact with 005a.

The anisotropic conductive film 4300 has a conductive filler 4300a. Substrate 4
By thermally pressing 001 and FPC 4006, the conductive film 4203a on the substrate 4001 and the FPC wiring 4301 on the FPC 4006 are electrically connected by the conductive filler 4300a.

The configuration of the present embodiment can be implemented by freely combining the configurations shown in Embodiments 1 to 11.

In this embodiment, an example of the pixel structure of the light-emitting device of the present invention, which is different from those in FIGS. 2, 7, and 8, will be described.

FIG. 30A shows the structure of the pixel of this example. A pixel 701 illustrated in FIG. 30A includes a signal line Si (one of S1 to Sx), a first scanning line Gaj (one of Ga1 to Gay), and a second scanning line Gbj (Gb1 to Gby). And a power supply line Vi (one of V1 to Vx). Note that the number of first scanning lines and second scanning lines provided in the pixel portion is not necessarily the same.

The pixel 701 includes a transistor Tr1 (first current control transistor or first transistor), a transistor Tr2 (second current control transistor or second transistor), a transistor Tr3 (third current control transistor or third transistor). Transistor)
, Transistor Tr4 (first switching transistor or fourth transistor),
It includes at least a transistor Tr5 (second switching transistor or fifth transistor), a transistor Tr6 (erasing transistor or sixth transistor), an OLED 704, and a storage capacitor 705.

The gate electrodes of the transistors Tr4 and Tr5 are both connected to the first scanning line Gaj.

One of the source region and the drain region of the transistor Tr4 is connected to the signal line Si, and the other is connected to the drain region of the transistor Tr1. One of the source region and the drain region of the transistor Tr5 is connected to the signal line Si, and the other is connected to the gate electrode of the transistor Tr3.

The gate electrodes of the transistor Tr1 and the transistor Tr2 are connected to each other. The source regions of the transistors Tr1 and Tr2 are both connected to the power supply line Vi.

In the transistor Tr2, the gate electrode and the drain region are connected, and the drain region is connected to the source region of the transistor Tr3.

The gate electrode of the transistor Tr6 is connected to the second scanning line Gbj. One of the source region and the drain region of the transistor Tr6 is connected to the power supply line Vi, and the other is connected to the gate electrodes of the transistors Tr1 and Tr2.

A drain region of the transistor Tr3 is connected to a pixel electrode included in the OLED 704. Further, the potential of the power supply line Vi (power supply potential) is kept at a constant height. The potential of the counter electrode is also maintained at a constant height.

Note that the transistor Tr4 and the transistor Tr5 may be either an n-channel transistor or a p-channel transistor. However, the transistor Tr4 and the transistor T
r5 has the same polarity.

The transistors Tr1, Tr2, and Tr3 may be either n-channel transistors or p-channel transistors. However, the polarities of the transistors Tr1, Tr2 and Tr3 are the same. When the anode is used as the pixel electrode and the cathode is used as the counter electrode, the transistors Tr1, Tr2, and Tr3 are p-channel transistors. vice versa,
When the anode is used as the counter electrode and the cathode is used as the pixel electrode, the transistors Tr1, T
r2 and Tr3 are n-channel transistors.

The transistor Tr6 may be either an n-channel transistor or a p-channel transistor.

The storage capacitor 705 is formed between the gate electrode of the transistor Tr3 and the power supply line Vi. The storage capacitor 705 is provided to more reliably maintain the voltage (gate voltage) between the gate electrode and the source region of the transistor Tr3, but it is not always necessary to provide the storage capacitor 705.

In addition, a storage capacitor is formed between the gate electrodes of the transistors Tr1 and Tr2 and the power supply line,
The gate voltages of the transistors Tr1 and Tr2 may be more reliably maintained.

FIG. 30B illustrates another structure of the pixel of this example. A pixel 711 illustrated in FIG.
The signal line Si (one of S1 to Sx), the first scanning line Gaj (1 of Ga1 to Gay)
A second scanning line Gbj (one of Gb1 to Gby) and a power supply line Vi (one of V1 to Vx). Note that the number of first scanning lines and second scanning lines provided in the pixel portion is not necessarily the same.

The pixel 711 includes a transistor Tr1 (first current control transistor or first transistor), a transistor Tr2 (second current control transistor or second transistor), and a transistor Tr3 (third current control transistor or third transistor). Transistor)
, Transistor Tr4 (first switching transistor or fourth transistor),
It includes at least a transistor Tr5 (second switching transistor or fifth transistor), a transistor Tr6 (erasing transistor or sixth transistor), an OLED 714, and a storage capacitor 715.

The gate electrodes of the transistors Tr4 and Tr5 are both connected to the first scanning line Gaj.

One of the source region and the drain region of the transistor Tr4 is connected to the signal line Si, and the other is connected to the drain region of the transistor Tr1. One of the source region and the drain region of the transistor Tr5 is connected to the drain region of the transistor Tr1, and the other is connected to the gate electrode of the transistor Tr3.

The gate electrodes of the transistor Tr1 and the transistor Tr2 are connected to each other. The source regions of the transistors Tr1 and Tr2 are both connected to the power supply line Vi.

In the transistor Tr2, the gate electrode and the drain region are connected, and the drain region is connected to the source region of the transistor Tr3.

The gate electrode of the transistor Tr6 is connected to the second scanning line Gbj. One of the source region and the drain region of the transistor Tr6 is connected to the power supply line Vi, and the other is connected to the gate electrodes of the transistors Tr1 and Tr2.

A drain region of the transistor Tr3 is connected to a pixel electrode included in the OLED 714. The potential of the power supply line Vi (power supply potential) is kept at a constant height. The potential of the counter electrode is also maintained at a constant height.

Note that the transistor Tr4 and the transistor Tr5 may be either an n-channel transistor or a p-channel transistor. However, the transistor Tr4 and the transistor T
r5 has the same polarity.

The transistors Tr1, Tr2, and Tr3 may be either n-channel transistors or p-channel transistors. However, the polarities of the transistors Tr1, Tr2 and Tr3 are the same. When the anode is used as the pixel electrode and the cathode is used as the counter electrode, the transistors Tr1, Tr2, and Tr3 are p-channel transistors. vice versa,
When the anode is used as the counter electrode and the cathode is used as the pixel electrode, Tr1, Tr2 and Tr
Reference numeral 3 denotes an n-channel transistor.

The transistor Tr6 may be either an n-channel transistor or a p-channel transistor.

The storage capacitor 715 is formed between the gate electrode of the transistor Tr3 and the power supply line Vi. The storage capacitor 715 is provided in order to more reliably maintain the gate voltage of the transistor Tr3, but is not necessarily provided.

In addition, a storage capacitor is formed between the gate electrodes of the transistors Tr1 and Tr2 and the power supply line,
The gate voltages of the transistors Tr1 and Tr2 may be more reliably maintained.

FIG. 30C illustrates another structure of the pixel of this example. A pixel 721 illustrated in FIG.
The signal line Si (one of S1 to Sx), the first scanning line Gaj (1 of Ga1 to Gay)
A second scanning line Gbj (one of Gb1 to Gby) and a power supply line Vi (one of V1 to Vx). Note that the number of first scanning lines and second scanning lines provided in the pixel portion is not necessarily the same.

The pixel 721 includes a transistor Tr1 (first current control transistor or first transistor), a transistor Tr2 (second current control transistor or second transistor), a transistor Tr3 (third current control transistor or third transistor). Transistor)
, Transistor Tr4 (first switching transistor or fourth transistor),
The pixel includes at least a transistor Tr5 (second switching transistor or fifth transistor), a transistor Tr6 (erasing transistor or sixth transistor), an OLED 724, and a storage capacitor 725.

The gate electrodes of the transistors Tr4 and Tr5 are both connected to the scanning line Gj.

One of the source region and the drain region of the transistor Tr4 is connected to the signal line Si, and the other is connected to the gate electrode of the transistor Tr3. One of the source region and the drain region of the transistor Tr5 is connected to the gate electrode of the transistor Tr3, and the other is connected to the drain region of the transistor Tr1.

The gate electrodes of the transistor Tr1 and the transistor Tr2 are connected to each other. The source regions of the transistors Tr1 and Tr2 are both connected to the power supply line Vi.

In the transistor Tr2, the gate electrode and the drain region are connected, and the drain region is connected to the source region of the transistor Tr3.

The gate electrode of the transistor Tr6 is connected to the second scanning line Gbj. One of the source region and the drain region of the transistor Tr6 is connected to the power supply line Vi, and the other is connected to the gate electrodes of the transistors Tr1 and Tr2.

A drain region of the transistor Tr3 is connected to a pixel electrode included in the OLED 724. The potential of the power supply line Vi (power supply potential) is kept at a constant height. The potential of the counter electrode is also maintained at a constant height.

Note that the transistor Tr4 and the transistor Tr5 may be either an n-channel transistor or a p-channel transistor. However, the transistor Tr4 and the transistor T
r5 has the same polarity.

The transistors Tr1, Tr2, and Tr3 may be either n-channel transistors or p-channel transistors. However, the polarities of the transistors Tr1, Tr2 and Tr3 are the same. When the anode is used as the pixel electrode and the cathode is used as the counter electrode, the transistors Tr1, Tr2, and Tr3 are p-channel transistors. vice versa,
When the anode is used as the counter electrode and the cathode is used as the pixel electrode, the transistors Tr1, T
r2 and Tr3 are n-channel transistors.

The transistor Tr6 may be either an n-channel transistor or a p-channel transistor.

The storage capacitor 725 is formed between the gate electrode of the transistor Tr3 and the power supply line Vi. The storage capacitor 725 is provided in order to more reliably maintain the voltage (gate voltage) between the gate electrode and the source region of the transistor Tr3, but it is not necessarily provided.

In addition, a storage capacitor is formed between the gate electrodes of the transistors Tr1 and Tr2 and the power supply line,
The gate voltages of the transistors Tr1 and Tr2 may be more reliably maintained.

Note that the driving method of the light-emitting device having the pixels shown in FIGS. 30A, 30B, and 30C is limited to the digital driving method. In the pixels shown in FIGS. 30A, 30B, and 30C, O
When the LEDs 704, 714, and 724 emit light, the OLEDs 704, 714, and 724 can be brought into a non-light emitting state by controlling the potential of the second scanning line Gbj and turning on the transistor Tr5. Accordingly, the display period of each pixel can be forcibly terminated in parallel with the input of the digital video signal to the pixel, so that the display period can be made shorter than the writing period, and a high bit number digital Suitable for driving using video signals.

The configuration of this embodiment can be implemented by freely combining the configurations shown in Embodiments 1, 2, 5, 6, 7, 8, 9, 11, and 12.

Since a light emitting device using an OLED is a self-luminous type, it is superior in visibility in a bright place and has a wide viewing angle as compared with a liquid crystal display. Therefore, it can be used for display portions of various electronic devices.

As an electronic device using the light emitting device of the present invention, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproduction device (car audio, audio component, etc.), a notebook type personal computer, a game device, A portable information terminal (mobile computer, mobile phone, portable game machine, electronic book, or the like), an image playback device equipped with a recording medium (specifically, a playback medium such as a digital video disc (DVD)) A device having a display capable of displaying). In particular, it is desirable to use a light-emitting device for a portable information terminal that often has an opportunity to see a screen from an oblique direction because the wide viewing angle is important. Specific examples of these electronic devices are shown in FIGS.

FIG. 25A illustrates an OLED display device, which includes a housing 2001, a support base 2002, and a display portion 20.
03, a speaker portion 2004, a video input terminal 2005, and the like. The light emitting device of the present invention can be used for the display portion 2003. Since the light-emitting device is a self-luminous type, a backlight is not necessary and a display portion thinner than a liquid crystal display can be obtained. The OLED display device includes all information display devices such as a personal computer, a TV broadcast receiver, and an advertisement display.

FIG. 25B illustrates a digital still camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103, operation keys 2104, an external connection port 2105, a shutter 2106, and the like.
The light emitting device of the present invention can be used for the display portion 2102.

FIG. 25C illustrates a laptop personal computer which includes a main body 2201 and a housing 2202.
A display portion 2203, a keyboard 2204, an external connection port 2205, a pointing mouse 2206, and the like. The light-emitting device of the present invention can be used for the display portion 2203.

FIG. 25D illustrates a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. The light emitting device of the present invention can be used for the display portion 2302.

FIG. 25E shows a portable image reproducing apparatus (specifically, a DVD reproducing apparatus) provided with a recording medium.
A main body 2401, a housing 2402, a display portion A 2403, a display portion B 2404, a recording medium (DVD or the like) reading portion 2405, operation keys 2406, a speaker portion 2407, and the like.
Although the display portion A 2403 mainly displays image information and the display portion B 2404 mainly displays character information, the light-emitting device of the present invention can be used for the display portions A, B 2403, and 2404. Note that an image reproducing device provided with a recording medium includes a home game machine and the like.

FIG. 25F illustrates a goggle type display (head mounted display), which includes a main body 2501, a display portion 2502, and an arm portion 2503. The light emitting device of the present invention includes the display unit 250.
2 can be used.

FIG. 25G illustrates a video camera, which includes a main body 2601, a display portion 2602, a housing 2603,
External connection port 2604, remote control receiving unit 2605, image receiving unit 2606, battery 260
7, voice input unit 2608, operation key 2609, and the like. The light emitting device of the present invention includes the display unit 260.
2 can be used.

Here, FIG. 25H illustrates a mobile phone, which includes a main body 2701, a housing 2702, and a display portion 2703.
, Audio input unit 2704, audio output unit 2705, operation keys 2706, external connection port 270
7, antenna 2708 and the like. The light emitting device of the present invention can be used for the display portion 2703. Note that the display portion 2703 can suppress current consumption of the mobile phone by displaying white characters on a black background.

If the light emission luminance of the organic light emitting material is increased in the future, the light including the output image information can be enlarged and projected by a lens or the like and used in a front type or rear type projector.

In addition, the electronic devices often display information distributed through electronic communication lines such as the Internet and CATV (cable television), and in particular, opportunities to display moving image information are increasing. Since the organic light emitting material has a very high response speed, the light emitting device is preferable for displaying moving images.

In addition, since the light emitting device consumes power in the light emitting portion, it is desirable to display information so that the light emitting portion is minimized. Therefore, when a light emitting device is used for a display unit mainly including character information, such as a portable information terminal, particularly a mobile phone or a sound reproduction device, it is driven so that character information is formed by the light emitting part with the non-light emitting part as the background It is desirable to do.

As described above, the applicable range of the present invention is so wide that it can be used for electronic devices in various fields. In addition, the electronic device of this embodiment may use the light emitting device having any structure shown in Embodiments 1 to 13.

Claims (3)

A light-emitting device having a first transistor, a second transistor, a third transistor, a capacitor, an organic light-emitting element, and a wiring for transmitting a power supply voltage,
A gate of the first transistor is electrically connected to a gate of the second transistor;
A gate of the first transistor is electrically connected to a drain of the second transistor;
A gate of the first transistor is electrically connected to a source of the third transistor;
A source of the first transistor is electrically connected to the wiring;
A source of the second transistor is electrically connected to the wiring;
A gate of the third transistor is electrically connected to the wiring through the capacitor;
The drain of the third transistor is electrically connected to the organic light emitting device,
The first, second, and third transistors have a state of operating in a saturation region;
In one frame, there is a writing period in which the drain of the first transistor and the gate of the third transistor are electrically connected,
A display device having a function of controlling luminance of the organic light emitting element by controlling a drain current of the first transistor in the writing period. A light-emitting device having a first transistor, a second transistor, a third transistor, a capacitor, an organic light-emitting element, and a wiring for transmitting a power supply voltage,
A gate of the first transistor is electrically connected to a gate of the second transistor;
A gate of the first transistor is electrically connected to a drain of the second transistor;
A gate of the first transistor is electrically connected to a source of the third transistor;
A source of the first transistor is electrically connected to the wiring;
A source of the second transistor is electrically connected to the wiring;
A gate of the third transistor is electrically connected to the wiring through the capacitor;
The drain of the third transistor is electrically connected to the organic light emitting device,
The first, second, and third transistors have a state of operating in a saturation region;
In one frame, there is a writing period in which the drain of the first transistor and the gate of the third transistor are electrically connected,
Controlling the luminance of the organic light emitting element by controlling the drain current of the first transistor during the writing period;
A display device having a plurality of display periods in the one frame and a function of displaying gradation by controlling a sum of the plurality of display periods. In claim 1 or claim 2,
A display device having a function of dividing a long display period among the plurality of display periods into a plurality of display periods.

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