KR101785992B1 - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
- Publication number
- KR101785992B1 KR101785992B1 KR1020127004253A KR20127004253A KR101785992B1 KR 101785992 B1 KR101785992 B1 KR 101785992B1 KR 1020127004253 A KR1020127004253 A KR 1020127004253A KR 20127004253 A KR20127004253 A KR 20127004253A KR 101785992 B1 KR101785992 B1 KR 101785992B1
- Authority
- KR
- South Korea
- Prior art keywords
- transistor
- signal
- layer
- circuit
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0202—Addressing of scan or signal lines
- G09G2310/0213—Addressing of scan or signal lines controlling the sequence of the scanning lines with respect to the patterns to be displayed, e.g. to save power
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0267—Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3266—Details of drivers for scan electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3433—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
- G09G3/344—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on particles moving in a fluid or in a gas, e.g. electrophoretic devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of El Displays (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Bipolar Transistors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Noodles (AREA)
- Shift Register Type Memory (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2009-172949 | 2009-07-24 | ||
| JP2009172949 | 2009-07-24 | ||
| PCT/JP2010/061367 WO2011010546A1 (en) | 2009-07-24 | 2010-06-29 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177028205A Division KR101904811B1 (ko) | 2009-07-24 | 2010-06-29 | 반도체 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20120040716A KR20120040716A (ko) | 2012-04-27 |
| KR101785992B1 true KR101785992B1 (ko) | 2017-10-18 |
Family
ID=43496904
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020127004253A Active KR101785992B1 (ko) | 2009-07-24 | 2010-06-29 | 반도체 장치 |
| KR1020177028205A Active KR101904811B1 (ko) | 2009-07-24 | 2010-06-29 | 반도체 장치 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177028205A Active KR101904811B1 (ko) | 2009-07-24 | 2010-06-29 | 반도체 장치 |
Country Status (5)
| Country | Link |
|---|---|
| US (7) | US9779679B2 (enExample) |
| JP (9) | JP2011044701A (enExample) |
| KR (2) | KR101785992B1 (enExample) |
| TW (7) | TWI570697B (enExample) |
| WO (1) | WO2011010546A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8115883B2 (en) | 2009-08-27 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| KR101767037B1 (ko) | 2010-03-02 | 2017-08-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 승압 회로 및 승압 회로를 포함하는 rfid 태그 |
| JP6126775B2 (ja) | 2010-06-25 | 2017-05-10 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US8829517B2 (en) * | 2010-07-21 | 2014-09-09 | Sharp Kabushiki Kaisha | Substrate, method for fabricating the same, and display device |
| US8854220B1 (en) * | 2010-08-30 | 2014-10-07 | Exelis, Inc. | Indicating desiccant in night vision goggles |
| KR101952570B1 (ko) | 2011-05-13 | 2019-02-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| TWI501226B (zh) | 2011-05-20 | 2015-09-21 | Semiconductor Energy Lab | 記憶體裝置及驅動記憶體裝置的方法 |
| JP6099372B2 (ja) * | 2011-12-05 | 2017-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
| BR112014030083A2 (pt) | 2012-06-04 | 2017-06-27 | Koninklijke Philips Nv | dispositivo para corte de cabelo a laser |
| US9742378B2 (en) | 2012-06-29 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit and semiconductor device |
| US8937307B2 (en) * | 2012-08-10 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102018114B1 (ko) * | 2013-01-22 | 2019-09-04 | 엘지디스플레이 주식회사 | 표시장치 |
| JP6300589B2 (ja) | 2013-04-04 | 2018-03-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP6475424B2 (ja) | 2013-06-05 | 2019-02-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2015132697A1 (en) * | 2014-03-07 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6521794B2 (ja) | 2014-09-03 | 2019-05-29 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| US9640228B2 (en) * | 2014-12-12 | 2017-05-02 | Globalfoundries Inc. | CMOS device with reading circuit |
| US10170635B2 (en) | 2015-12-09 | 2019-01-01 | Ricoh Company, Ltd. | Semiconductor device, display device, display apparatus, and system |
| CN105517253B (zh) * | 2016-01-27 | 2017-06-06 | 福州大学 | 一种复合辅助绕组TiBuck‑Flyback单级LED驱动电路 |
| US10333004B2 (en) * | 2016-03-18 | 2019-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, module and electronic device |
| JP7126823B2 (ja) | 2016-12-23 | 2022-08-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US10597158B2 (en) * | 2017-08-02 | 2020-03-24 | Panasonic Avionics Corporation | Device for use in vehicle |
| CN107863057B (zh) * | 2017-10-31 | 2020-12-18 | 上海天马微电子有限公司 | 一种移位寄存器、其驱动方法、驱动控制电路及相关装置 |
| JP7516039B2 (ja) * | 2019-12-19 | 2024-07-16 | 株式会社ジャパンディスプレイ | 表示装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002311879A (ja) | 2001-04-09 | 2002-10-25 | Sharp Corp | 走査信号分岐回路およびアクティブマトリクス基板 |
| JP2007096055A (ja) * | 2005-09-29 | 2007-04-12 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
| JP2008287134A (ja) * | 2007-05-21 | 2008-11-27 | Seiko Epson Corp | パルス出力回路、シフトレジスタ、走査線駆動回路、データ線駆動回路、電気光学装置及び電子機器 |
Family Cites Families (172)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5125580B1 (enExample) | 1970-08-18 | 1976-07-31 | ||
| JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
| JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
| JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JP2550684B2 (ja) | 1988-11-04 | 1996-11-06 | 日本電気株式会社 | 半導体装置 |
| JPH04298895A (ja) | 1991-03-26 | 1992-10-22 | Nec Ic Microcomput Syst Ltd | 半導体記憶回路 |
| JP2776083B2 (ja) | 1991-08-23 | 1998-07-16 | 日本電気株式会社 | 液晶表示装置およびその製造方法 |
| JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
| JPH07235678A (ja) | 1994-02-22 | 1995-09-05 | Hitachi Ltd | 薄膜半導体装置及びその製造方法 |
| US6919874B1 (en) | 1994-05-17 | 2005-07-19 | Thales Avionics Lcd S.A. | Shift register using M.I.S. transistors and supplementary column |
| FR2720185B1 (fr) * | 1994-05-17 | 1996-07-05 | Thomson Lcd | Registre à décalage utilisant des transistors M.I.S. de même polarité. |
| JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
| EP0820644B1 (en) | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
| JP3625598B2 (ja) * | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
| US5612228A (en) | 1996-04-24 | 1997-03-18 | Motorola | Method of making CMOS with organic and inorganic semiconducting region |
| JPH1186586A (ja) | 1997-09-03 | 1999-03-30 | Furontetsuku:Kk | シフトレジスタ装置および表示装置 |
| JP3972270B2 (ja) | 1998-04-07 | 2007-09-05 | ソニー株式会社 | 画素駆動回路および駆動回路一体型画素集積装置 |
| EP1093663A2 (en) | 1998-06-19 | 2001-04-25 | Thin Film Electronics ASA | Integrated inorganic/organic complementary thin-film transistor circuit |
| JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
| JP2000150861A (ja) * | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
| JP3276930B2 (ja) * | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
| TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
| JP3394483B2 (ja) | 1999-11-16 | 2003-04-07 | 鹿児島日本電気株式会社 | 薄膜トランジスタ基板およびその製造方法 |
| KR100698239B1 (ko) * | 2000-08-30 | 2007-03-21 | 엘지.필립스 엘시디 주식회사 | 쉬프트 레지스터 회로 |
| JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
| KR20020038482A (ko) * | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
| JP3997731B2 (ja) * | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
| JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
| KR100776768B1 (ko) * | 2001-07-21 | 2007-11-16 | 삼성전자주식회사 | 액정표시패널용 기판 및 그 제조방법 |
| KR100803163B1 (ko) * | 2001-09-03 | 2008-02-14 | 삼성전자주식회사 | 액정표시장치 |
| JP4090716B2 (ja) * | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
| JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
| JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
| WO2003040441A1 (fr) * | 2001-11-05 | 2003-05-15 | Japan Science And Technology Agency | Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin |
| JP2003243658A (ja) | 2002-02-12 | 2003-08-29 | Seiko Epson Corp | 半導体装置、電気光学装置、電子機器、半導体装置の製造方法、電気光学装置の製造方法 |
| JP4083486B2 (ja) * | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
| JP2003273361A (ja) | 2002-03-15 | 2003-09-26 | Sharp Corp | 半導体装置およびその製造方法 |
| CN1445821A (zh) * | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
| JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
| US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| JP2004022625A (ja) * | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
| US7105868B2 (en) * | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
| US7067843B2 (en) * | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
| JP4339103B2 (ja) * | 2002-12-25 | 2009-10-07 | 株式会社半導体エネルギー研究所 | 半導体装置及び表示装置 |
| JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
| US7319452B2 (en) * | 2003-03-25 | 2008-01-15 | Samsung Electronics Co., Ltd. | Shift register and display device having the same |
| JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
| US7262463B2 (en) * | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
| JP4413573B2 (ja) | 2003-10-16 | 2010-02-10 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| KR100970958B1 (ko) * | 2003-11-04 | 2010-07-20 | 삼성전자주식회사 | 터치 스크린 기능을 갖는 액정 표시 장치 및 그의 제조 방법 |
| JP4474262B2 (ja) | 2003-12-05 | 2010-06-02 | 株式会社日立製作所 | 走査線選択回路及びそれを用いた表示装置 |
| CN100385478C (zh) * | 2003-12-27 | 2008-04-30 | Lg.菲利浦Lcd株式会社 | 包括移位寄存器的驱动电路以及使用其的平板显示器件 |
| US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
| US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
| US7145174B2 (en) * | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
| CN1998087B (zh) | 2004-03-12 | 2014-12-31 | 独立行政法人科学技术振兴机构 | 非晶形氧化物和薄膜晶体管 |
| JP2005285168A (ja) * | 2004-03-29 | 2005-10-13 | Alps Electric Co Ltd | シフトレジスタ及びそれを用いた液晶駆動回路 |
| TW200600916A (en) * | 2004-05-27 | 2006-01-01 | Alps Electric Co Ltd | Color liquid crystal display device |
| JP2005352147A (ja) | 2004-06-10 | 2005-12-22 | Tohoku Pioneer Corp | アクティブマトリクス型発光表示パネル |
| US7211825B2 (en) * | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| TWI393093B (zh) | 2004-06-30 | 2013-04-11 | Samsung Display Co Ltd | 移位暫存器,具有該移位暫存器之顯示裝置,及其驅動方法 |
| JP2006100760A (ja) * | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
| US7285501B2 (en) * | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
| KR101074402B1 (ko) * | 2004-09-23 | 2011-10-17 | 엘지디스플레이 주식회사 | 액정표시장치 및 그의 구동방법 |
| JP2006106394A (ja) * | 2004-10-06 | 2006-04-20 | Alps Electric Co Ltd | 液晶駆動回路および液晶表示装置 |
| US7298084B2 (en) * | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
| KR20070085879A (ko) * | 2004-11-10 | 2007-08-27 | 캐논 가부시끼가이샤 | 발광 장치 |
| CA2585190A1 (en) * | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
| US7868326B2 (en) * | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
| US7791072B2 (en) * | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
| US7453065B2 (en) * | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
| US7863611B2 (en) * | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
| US7829444B2 (en) * | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
| KR100662790B1 (ko) * | 2004-12-28 | 2007-01-02 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
| US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| TWI569441B (zh) * | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
| TWI472037B (zh) * | 2005-01-28 | 2015-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
| US7858451B2 (en) * | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
| US7948171B2 (en) * | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US20060197092A1 (en) * | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
| US8681077B2 (en) * | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
| US7544967B2 (en) | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
| JP2006278621A (ja) | 2005-03-29 | 2006-10-12 | Toppan Printing Co Ltd | トランジスタ論理回路の製造方法 |
| US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
| US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
| KR20060123913A (ko) * | 2005-05-30 | 2006-12-05 | 삼성전자주식회사 | 쉬프트 레지스터 및 이를 갖는 표시장치 |
| JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
| US7402506B2 (en) * | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
| KR100711890B1 (ko) * | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
| US7623097B2 (en) * | 2005-08-17 | 2009-11-24 | Samsung Mobile Display Co., Ltd. | Emission control driver and organic light emitting display device having the same and a logical or circuit for an emission control driver for outputting an emission control signal |
| JP2007059128A (ja) * | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
| JP5116225B2 (ja) * | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
| JP4280736B2 (ja) * | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
| JP2007073705A (ja) * | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
| JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
| EP1998373A3 (en) | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
| US7982215B2 (en) | 2005-10-05 | 2011-07-19 | Idemitsu Kosan Co., Ltd. | TFT substrate and method for manufacturing TFT substrate |
| WO2007043493A1 (en) | 2005-10-14 | 2007-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5427340B2 (ja) | 2005-10-14 | 2014-02-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9153341B2 (en) * | 2005-10-18 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Shift register, semiconductor device, display device, and electronic device |
| JP5037808B2 (ja) * | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
| WO2007058329A1 (en) * | 2005-11-15 | 2007-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| TWI292281B (en) * | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
| US7867636B2 (en) * | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
| JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
| US7576394B2 (en) * | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
| US7977169B2 (en) * | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
| KR100786467B1 (ko) * | 2006-03-29 | 2007-12-17 | 삼성에스디아이 주식회사 | 주사구동회로 및 이를 이용한 유기발광표시장치 |
| KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
| US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
| JP2007317288A (ja) * | 2006-05-25 | 2007-12-06 | Mitsubishi Electric Corp | シフトレジスタ回路およびそれを備える画像表示装置 |
| US8330492B2 (en) * | 2006-06-02 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US7443202B2 (en) | 2006-06-02 | 2008-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic apparatus having the same |
| JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4241850B2 (ja) * | 2006-07-03 | 2009-03-18 | エプソンイメージングデバイス株式会社 | 液晶装置、液晶装置の駆動方法、および電子機器 |
| JP4999400B2 (ja) * | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4609797B2 (ja) * | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
| EP1895545B1 (en) * | 2006-08-31 | 2014-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| JP5079425B2 (ja) | 2006-08-31 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
| JP4332545B2 (ja) * | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
| JP4274219B2 (ja) * | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
| JP5164357B2 (ja) * | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP4932415B2 (ja) * | 2006-09-29 | 2012-05-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI850180B (zh) * | 2006-09-29 | 2024-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| JP5116277B2 (ja) | 2006-09-29 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
| JP4990034B2 (ja) * | 2006-10-03 | 2012-08-01 | 三菱電機株式会社 | シフトレジスタ回路およびそれを備える画像表示装置 |
| US7622371B2 (en) * | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
| TWI341505B (en) * | 2006-11-27 | 2011-05-01 | Chimei Innolux Corp | Liquid crystal panel and driving method thereof |
| US7772021B2 (en) * | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
| JP2008140684A (ja) * | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
| KR101303578B1 (ko) * | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
| US8207063B2 (en) * | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
| JP5090008B2 (ja) * | 2007-02-07 | 2012-12-05 | 三菱電機株式会社 | 半導体装置およびシフトレジスタ回路 |
| KR101375863B1 (ko) * | 2007-03-08 | 2014-03-17 | 삼성디스플레이 주식회사 | 표시장치 및 이의 구동방법 |
| KR100851215B1 (ko) * | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
| TWI453711B (zh) * | 2007-03-21 | 2014-09-21 | Semiconductor Energy Lab | 顯示裝置 |
| US8552948B2 (en) | 2007-04-05 | 2013-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising threshold control circuit |
| JP5042077B2 (ja) | 2007-04-06 | 2012-10-03 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
| KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
| KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
| JP2008276849A (ja) * | 2007-04-27 | 2008-11-13 | Mitsubishi Electric Corp | 画像表示装置および半導体装置 |
| KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
| KR100968720B1 (ko) * | 2007-06-29 | 2010-07-08 | 소니 주식회사 | 액정 장치, 및 전자기기 |
| KR101055211B1 (ko) * | 2007-07-11 | 2011-08-08 | 엘지디스플레이 주식회사 | 액정표시장치의 제조방법 |
| JP2009021477A (ja) * | 2007-07-13 | 2009-01-29 | Sony Corp | 半導体装置およびその製造方法、ならびに表示装置およびその製造方法 |
| TWI346391B (en) * | 2007-08-20 | 2011-08-01 | Au Optronics Corp | Liquid crystal display device and the manufacturing method thereof |
| CN101779252B (zh) * | 2007-09-12 | 2013-05-15 | 夏普株式会社 | 移位寄存器 |
| JP5354999B2 (ja) | 2007-09-26 | 2013-11-27 | キヤノン株式会社 | 電界効果型トランジスタの製造方法 |
| JP2009099847A (ja) | 2007-10-18 | 2009-05-07 | Canon Inc | 薄膜トランジスタとその製造方法及び表示装置 |
| JP4444325B2 (ja) | 2007-10-19 | 2010-03-31 | シャープ株式会社 | 画像表示装置 |
| US7824939B2 (en) * | 2007-10-23 | 2010-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device comprising separated and electrically connected source wiring layers |
| TW200921226A (en) | 2007-11-06 | 2009-05-16 | Wintek Corp | Panel structure and manufacture method thereof |
| US8319214B2 (en) | 2007-11-15 | 2012-11-27 | Fujifilm Corporation | Thin film field effect transistor with amorphous oxide active layer and display using the same |
| JP5215158B2 (ja) * | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
| US8274929B2 (en) * | 2008-02-08 | 2012-09-25 | Adc Telecommunications, Inc. | Enterprise mobile network for providing cellular wireless service using licensed radio frequency spectrum and the session initiation protocol |
| CN101939777B (zh) * | 2008-02-19 | 2013-03-20 | 夏普株式会社 | 显示装置及显示装置的驱动方法 |
| TWI380274B (en) | 2008-02-21 | 2012-12-21 | Chunghwa Picture Tubes Ltd | Shift register and liquid crystal display (lcd) |
| TWI328788B (en) * | 2008-03-11 | 2010-08-11 | Au Optronics Corp | Gate driver-on-array and method of making the same |
| KR100941836B1 (ko) * | 2008-05-19 | 2010-02-11 | 삼성모바일디스플레이주식회사 | 유기 전계 발광표시장치 |
| US8314765B2 (en) | 2008-06-17 | 2012-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, display device, and electronic device |
| KR102099548B1 (ko) * | 2008-11-28 | 2020-04-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치 및 표시 장치를 포함하는 전자 장치 |
| KR101073301B1 (ko) | 2009-07-15 | 2011-10-12 | 삼성모바일디스플레이주식회사 | 유기 전계발광 표시장치 및 그 제조방법 |
-
2010
- 2010-06-29 WO PCT/JP2010/061367 patent/WO2011010546A1/en not_active Ceased
- 2010-06-29 KR KR1020127004253A patent/KR101785992B1/ko active Active
- 2010-06-29 KR KR1020177028205A patent/KR101904811B1/ko active Active
- 2010-07-13 US US12/835,273 patent/US9779679B2/en not_active Expired - Fee Related
- 2010-07-13 TW TW104110677A patent/TWI570697B/zh active
- 2010-07-13 TW TW107105639A patent/TWI658455B/zh not_active IP Right Cessation
- 2010-07-13 TW TW108104606A patent/TWI698854B/zh not_active IP Right Cessation
- 2010-07-13 TW TW109116743A patent/TWI768348B/zh active
- 2010-07-13 TW TW111122063A patent/TWI834193B/zh active
- 2010-07-13 TW TW105137654A patent/TWI622975B/zh active
- 2010-07-13 TW TW099122983A patent/TWI489429B/zh active
- 2010-07-22 JP JP2010164547A patent/JP2011044701A/ja not_active Withdrawn
-
2013
- 2013-07-17 JP JP2013148115A patent/JP2014013391A/ja not_active Withdrawn
-
2015
- 2015-04-08 JP JP2015078888A patent/JP6084997B2/ja not_active Expired - Fee Related
-
2016
- 2016-12-06 JP JP2016236485A patent/JP2017085121A/ja not_active Withdrawn
-
2017
- 2017-01-23 US US15/412,263 patent/US9875713B2/en active Active
-
2018
- 2018-01-10 US US15/866,514 patent/US10810961B2/en active Active
- 2018-04-09 JP JP2018074360A patent/JP2018152569A/ja not_active Withdrawn
-
2019
- 2019-09-05 JP JP2019161947A patent/JP2020017744A/ja not_active Withdrawn
-
2020
- 2020-10-14 US US17/070,128 patent/US11373615B2/en active Active
-
2021
- 2021-03-22 JP JP2021047155A patent/JP7237107B2/ja active Active
-
2022
- 2022-06-24 US US17/848,488 patent/US11663989B2/en active Active
-
2023
- 2023-02-28 JP JP2023029509A patent/JP2023081905A/ja not_active Withdrawn
- 2023-05-22 US US18/200,081 patent/US12183302B2/en active Active
-
2024
- 2024-10-29 JP JP2024189688A patent/JP7749094B2/ja active Active
- 2024-12-27 US US19/002,938 patent/US20250124890A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002311879A (ja) | 2001-04-09 | 2002-10-25 | Sharp Corp | 走査信号分岐回路およびアクティブマトリクス基板 |
| JP2007096055A (ja) * | 2005-09-29 | 2007-04-12 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
| JP2008287134A (ja) * | 2007-05-21 | 2008-11-27 | Seiko Epson Corp | パルス出力回路、シフトレジスタ、走査線駆動回路、データ線駆動回路、電気光学装置及び電子機器 |
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101785992B1 (ko) | 반도체 장치 | |
| KR20130084650A (ko) | 반도체 장치 | |
| KR20180126096A (ko) | 반도체 디바이스 및 그 형성 방법 | |
| KR20140068765A (ko) | 표시 장치 및 전자 기기 | |
| TWI899830B (zh) | 半導體裝置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PE0801 | Dismissal of amendment |
St.27 status event code: A-2-2-P10-P12-nap-PE0801 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| E90F | Notification of reason for final refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| PA0104 | Divisional application for international application |
St.27 status event code: A-0-1-A10-A18-div-PA0104 St.27 status event code: A-0-1-A10-A16-div-PA0104 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U12-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9 |