KR100802212B1 - 기판 처리 장치 - Google Patents

기판 처리 장치 Download PDF

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Publication number
KR100802212B1
KR100802212B1 KR1020030019041A KR20030019041A KR100802212B1 KR 100802212 B1 KR100802212 B1 KR 100802212B1 KR 1020030019041 A KR1020030019041 A KR 1020030019041A KR 20030019041 A KR20030019041 A KR 20030019041A KR 100802212 B1 KR100802212 B1 KR 100802212B1
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KR
South Korea
Prior art keywords
gas
reaction tube
cleaning
cleaning gas
exhaust
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1020030019041A
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English (en)
Korean (ko)
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KR20030078699A (ko
Inventor
오쿠다가즈유키
가가야도루
사카이마사노리
Original Assignee
가부시키가이샤 히다치 고쿠사이 덴키
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Publication of KR20030078699A publication Critical patent/KR20030078699A/ko
Application granted granted Critical
Publication of KR100802212B1 publication Critical patent/KR100802212B1/ko
Assigned to 가부시키가이샤 코쿠사이 엘렉트릭 reassignment 가부시키가이샤 코쿠사이 엘렉트릭 권리의 전부이전등록 Assignors: 가부시키가이샤 히다치 고쿠사이 덴키
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020030019041A 2002-03-28 2003-03-27 기판 처리 장치 Expired - Lifetime KR100802212B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00092733 2002-03-28
JP2002092733 2002-03-28
JP2002366250A JP3985899B2 (ja) 2002-03-28 2002-12-18 基板処理装置
JPJP-P-2002-00366250 2002-12-18

Publications (2)

Publication Number Publication Date
KR20030078699A KR20030078699A (ko) 2003-10-08
KR100802212B1 true KR100802212B1 (ko) 2008-02-11

Family

ID=29585950

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030019041A Expired - Lifetime KR100802212B1 (ko) 2002-03-28 2003-03-27 기판 처리 장치

Country Status (4)

Country Link
US (6) US20030221779A1 (https=)
JP (1) JP3985899B2 (https=)
KR (1) KR100802212B1 (https=)
TW (1) TW591690B (https=)

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JP3985899B2 (ja) * 2002-03-28 2007-10-03 株式会社日立国際電気 基板処理装置
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JP4943047B2 (ja) 2006-04-07 2012-05-30 東京エレクトロン株式会社 処理装置及び処理方法
US8235001B2 (en) * 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
US20090004877A1 (en) * 2007-06-28 2009-01-01 Hitachi Kokusai Electric Inc. Substrate processing apparatus and semiconductor device manufacturing method
JP5372353B2 (ja) * 2007-09-25 2013-12-18 株式会社フジキン 半導体製造装置用ガス供給装置
JP4994197B2 (ja) 2007-11-16 2012-08-08 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP5237133B2 (ja) * 2008-02-20 2013-07-17 株式会社日立国際電気 基板処理装置
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JP5520552B2 (ja) * 2009-09-11 2014-06-11 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
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JP5356552B2 (ja) * 2012-01-30 2013-12-04 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法及び基板処理装置
JP6255335B2 (ja) 2012-03-22 2017-12-27 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
KR101965256B1 (ko) * 2012-10-17 2019-04-04 삼성디스플레이 주식회사 유기 발광 표시 장치
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JP6107327B2 (ja) * 2013-03-29 2017-04-05 東京エレクトロン株式会社 成膜装置及びガス供給装置並びに成膜方法
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JP5968996B2 (ja) * 2014-12-18 2016-08-10 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびプログラム
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JP1535455S (https=) * 2015-02-25 2015-10-19
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JP1548462S (https=) * 2015-09-04 2016-04-25
JP1546512S (https=) * 2015-09-04 2016-03-22
JP6823385B2 (ja) * 2016-05-30 2021-02-03 株式会社日立製作所 付着物収集装置及び検査システム
JP1605460S (https=) * 2017-08-09 2021-05-31
JP1605461S (https=) * 2017-08-10 2021-05-31
KR101936026B1 (ko) * 2018-11-23 2019-01-07 김진호 대칭 가스 분사를 이용한 파티클 제거 장치
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KR20230037701A (ko) * 2020-07-01 2023-03-16 램 리써치 코포레이션 간헐적인 정체 플로우
CN113314439B (zh) * 2021-04-27 2023-11-28 长江存储科技有限责任公司 湿法刻蚀装置及方法
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JP1713188S (https=) * 2021-09-15 2022-04-21
JP1713189S (https=) * 2021-09-15 2022-04-21
JP1731789S (ja) * 2022-03-01 2025-12-15 反応管
JP1731878S (ja) * 2022-03-01 2025-12-15 反応管
JP1731877S (ja) * 2022-03-01 2025-12-15 反応管

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US8211802B2 (en) 2012-07-03
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