KR100802212B1 - 기판 처리 장치 - Google Patents
기판 처리 장치 Download PDFInfo
- Publication number
- KR100802212B1 KR100802212B1 KR1020030019041A KR20030019041A KR100802212B1 KR 100802212 B1 KR100802212 B1 KR 100802212B1 KR 1020030019041 A KR1020030019041 A KR 1020030019041A KR 20030019041 A KR20030019041 A KR 20030019041A KR 100802212 B1 KR100802212 B1 KR 100802212B1
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- reaction tube
- cleaning
- cleaning gas
- exhaust
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 83
- 238000012545 processing Methods 0.000 title claims abstract description 43
- 238000004140 cleaning Methods 0.000 claims abstract description 100
- 230000000903 blocking effect Effects 0.000 claims description 9
- 238000005530 etching Methods 0.000 abstract description 55
- 239000007789 gas Substances 0.000 description 188
- 238000000034 method Methods 0.000 description 21
- 238000009792 diffusion process Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
- 반응관에 연통하는 가스 도입관과 폐색 부재를 갖는 가스 배기관을 구비한 기판 처리 장치에 있어서,상기 가스 도입관으로부터 상기 반응관 내로 클리닝 가스를 공급하고 있는 동안, 상기 가스 배기관으로부터의 배기가 정지되어 있는 상태가 있도록 하기 위해,상기 가스 도입관으로부터 상기 반응관 내로 클리닝 가스를 공급하기 전의 소정 시점부터 상기 반응관 내로 클리닝 가스의 공급 개시부터 수 초 경과하는 시점까지,배기를 실질적으로 정지시키도록 상기 폐색 부재의 폐색도(閉塞度)를 제어하는 제어부를 갖고,상기 제어부의 제어에 의해 상기 반응관 내를 클리닝 가스로 충만시키는 제1 단계와, 이 제1 단계 후, 상기 반응관 내를 배기하는 제2 단계를 설치하고, 상기 제1 단계와 제2 단계를 적어도 1사이클 이상 반복하는 것을 특징으로 하는 기판 처리 장치.
- 제1항에 있어서, 상기 가스 배기관으로부터의 배기는, 상기 가스 도입관으로부터의 클리닝 가스 공급 개시와 동시 또는 클리닝 가스 공급 개시 전에 실질적으로 정지하는 것을 특징으로 하는 기판 처리 장치.
- 제1항에 있어서, 상기 가스 배기관으로부터의 배기는, 상기 가스 도입관으로 부터의 클리닝 가스 공급 개시 후 7초 이내에 실질적으로 정지하는 것을 특징으로 하는 기판 처리 장치.
- 삭제
- 반응관에 연통하는 가스 도입관과 폐색 부재를 갖는 가스 배기관을 구비한 기판 처리 장치에 있어서,상기 가스 도입관으로부터 상기 반응관 내로 클리닝 가스를 공급하고 있는 동안, 상기 가스 배기관으로부터의 배기가 정지되어 있는 상태가 있도록 하기 위해,상기 가스 도입관으로부터 상기 반응관 내로 클리닝 가스를 공급하기 전의 소정 시점부터 상기 반응관 내로 클리닝 가스를 공급 개시한 후의 소정 시점까지,배기를 실질적으로 정지시키도록 상기 폐색 부재의 폐색도를 제어하는 제어부를 갖고,상기 제어부의 제어에 의해, 상기 가스 도입관으로부터의 클리닝 가스의 공급은, 제1 유량치로 반응관 내를 소정의 압력이 될 때까지 반응관 내로 공급한 후, 상기 제1 유량치보다 적은 제2 유량치로 반응관 내로 공급하고, 상기 반응관 내를 클리닝 가스로 충만시키는 것을 특징으로 하는 기판 처리 장치.
- 삭제
- 제5항에 있어서, 상기 제1 유량치로 클리닝 가스를 반응관 내로 공급하는 제1 기간은, 상기 제2 유량치로 클리닝 가스를 반응관 내로 공급하는 제2 기간보다도 짧은 것을 특징으로 하는 기판 처리 장치.
- 제5항에 있어서, 상기 제1 유량치로 클리닝 가스를 반응관 내로 공급하는 기간에서의 반응관 내의 압력 상승도는, 상기 제2 유량치로 클리닝 가스를 반응관 내로 공급하는 기간에서의 반응관 내의 압력 상승도보다도 높은 것을 특징으로 하는 기판 처리 장치.
- 제1항에 있어서, 반응관 내에 클리닝 가스를 공급하고, 반응관 내 압력이 소정의 압력으로 된 후, 클리닝 가스의 공급을 소정 시간 정지하는 것을 특징으로 하는 기판 처리 장치.
- 반응관과, 이 반응관에 연통하는 가스 도입관과, 상기 반응관에 연통하고, 폐색 부재를 갖는 가스 배기관과, 상기 가스 도입관으로 클리닝 가스를 공급하는 클리닝 가스 공급 수단과, 이 클리닝 가스 공급 수단에 의해 상기 가스 도입관을 통해 상기 반응관 내로 클리닝 가스를 공급하고 있는 동안, 상기 가스 배기관으로부터의 배기가 정지되어 있는 상태가 있도록 하기 위해, 상기 가스 도입관으로부터 상기 반응관 내로 클리닝 가스를 공급하기 전의 소정 시점부터 상기 반응관 내로 클리닝 가스의 공급 개시부터 수 초 경과하는 시점까지, 배기를 실질적으로 정지시키도록 상기 폐색 부재의 폐색도를 제어하는 제어 수단을 구비하고,상기 제어부의 제어에 의해 상기 반응관 내를 클리닝 가스로 충만시키는 제1 단계와, 이 제1 단계 후, 상기 반응관 내를 배기하는 제2 단계를 설치하고, 상기 제1 단계와 제2 단계를 적어도 1 싸이클 이상 반복하는 것을 특징으로 하는 기판 처리 장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2002-00092733 | 2002-03-28 | ||
JP2002092733 | 2002-03-28 | ||
JP2002366250A JP3985899B2 (ja) | 2002-03-28 | 2002-12-18 | 基板処理装置 |
JPJP-P-2002-00366250 | 2002-12-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030078699A KR20030078699A (ko) | 2003-10-08 |
KR100802212B1 true KR100802212B1 (ko) | 2008-02-11 |
Family
ID=29585950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030019041A KR100802212B1 (ko) | 2002-03-28 | 2003-03-27 | 기판 처리 장치 |
Country Status (4)
Country | Link |
---|---|
US (6) | US20030221779A1 (ko) |
JP (1) | JP3985899B2 (ko) |
KR (1) | KR100802212B1 (ko) |
TW (1) | TW591690B (ko) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4948490B2 (ja) * | 2002-03-28 | 2012-06-06 | 株式会社日立国際電気 | クリーニング方法および基板処理装置 |
JP3985899B2 (ja) * | 2002-03-28 | 2007-10-03 | 株式会社日立国際電気 | 基板処理装置 |
JP4526540B2 (ja) * | 2004-12-28 | 2010-08-18 | 株式会社日立国際電気 | 基板処理装置および基板処理方法 |
JP4734317B2 (ja) * | 2005-02-17 | 2011-07-27 | 株式会社日立国際電気 | 基板処理方法および基板処理装置 |
JP4943047B2 (ja) * | 2006-04-07 | 2012-05-30 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
US8235001B2 (en) * | 2007-04-02 | 2012-08-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
US20090004877A1 (en) * | 2007-06-28 | 2009-01-01 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device manufacturing method |
JP5372353B2 (ja) * | 2007-09-25 | 2013-12-18 | 株式会社フジキン | 半導体製造装置用ガス供給装置 |
JP4994197B2 (ja) | 2007-11-16 | 2012-08-08 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
JP5237133B2 (ja) * | 2008-02-20 | 2013-07-17 | 株式会社日立国際電気 | 基板処理装置 |
JP5457654B2 (ja) * | 2008-09-17 | 2014-04-02 | 株式会社日立国際電気 | 半導体装置の製造方法及び熱処理炉のクリーニング方法 |
JP5520552B2 (ja) * | 2009-09-11 | 2014-06-11 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
JP5085752B2 (ja) | 2010-03-24 | 2012-11-28 | 株式会社東芝 | 半導体製造装置のクリーニング方法、半導体製造装置、及び管理システム |
KR20140022717A (ko) * | 2010-08-25 | 2014-02-25 | 린데 악티엔게젤샤프트 | 불소 분자를 사용한 화학 증착 챔버 세정 방법 |
US20130025786A1 (en) * | 2011-07-28 | 2013-01-31 | Vladislav Davidkovich | Systems for and methods of controlling time-multiplexed deep reactive-ion etching processes |
JP5356552B2 (ja) * | 2012-01-30 | 2013-12-04 | 株式会社日立国際電気 | クリーニング方法、半導体装置の製造方法及び基板処理装置 |
US9502233B2 (en) | 2012-03-22 | 2016-11-22 | Hitachi Kokusai Electric, Inc. | Method for manufacturing semiconductor device, method for processing substrate, substrate processing device and recording medium |
KR101965256B1 (ko) * | 2012-10-17 | 2019-04-04 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
JP6017396B2 (ja) * | 2012-12-18 | 2016-11-02 | 東京エレクトロン株式会社 | 薄膜形成方法および薄膜形成装置 |
JP6107327B2 (ja) * | 2013-03-29 | 2017-04-05 | 東京エレクトロン株式会社 | 成膜装置及びガス供給装置並びに成膜方法 |
US9246133B2 (en) * | 2013-04-12 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting module, light-emitting panel, and light-emitting device |
USD742339S1 (en) * | 2014-03-12 | 2015-11-03 | Hitachi Kokusai Electric Inc. | Reaction tube |
USD748594S1 (en) * | 2014-03-12 | 2016-02-02 | Hitachi Kokusai Electric Inc. | Reaction tube |
CN103894380A (zh) * | 2014-03-24 | 2014-07-02 | 上海华力微电子有限公司 | 带清洗枪的竖式清洗机 |
JP5968996B2 (ja) * | 2014-12-18 | 2016-08-10 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法およびプログラム |
US10100407B2 (en) * | 2014-12-19 | 2018-10-16 | Lam Research Corporation | Hardware and process for film uniformity improvement |
JP1535455S (ko) * | 2015-02-25 | 2015-10-19 | ||
JP1546512S (ko) * | 2015-09-04 | 2016-03-22 | ||
JP1548462S (ko) * | 2015-09-04 | 2016-04-25 | ||
JP6823385B2 (ja) * | 2016-05-30 | 2021-02-03 | 株式会社日立製作所 | 付着物収集装置及び検査システム |
JP1605460S (ko) * | 2017-08-09 | 2021-05-31 | ||
JP1605461S (ko) * | 2017-08-10 | 2021-05-31 | ||
JP1644260S (ko) * | 2019-03-20 | 2019-10-28 | ||
USD931823S1 (en) * | 2020-01-29 | 2021-09-28 | Kokusai Electric Corporation | Reaction tube |
CN113314439B (zh) * | 2021-04-27 | 2023-11-28 | 长江存储科技有限责任公司 | 湿法刻蚀装置及方法 |
JP1713188S (ko) * | 2021-09-15 | 2022-04-21 | ||
JP1731878S (ko) * | 2022-03-01 | 2022-12-09 | ||
JP1731789S (ko) * | 2022-03-01 | 2022-12-09 | ||
JP1731877S (ko) * | 2022-03-01 | 2022-12-09 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0265233A (ja) * | 1988-08-31 | 1990-03-05 | Nec Yamagata Ltd | 半導体ウェーハの水分除去装置 |
JP2000328248A (ja) | 1999-05-12 | 2000-11-28 | Nissin Electric Co Ltd | 薄膜形成装置のクリーニング方法及び薄膜形成装置 |
JP2001250818A (ja) | 1999-12-28 | 2001-09-14 | Tokyo Electron Ltd | 酸化処理装置及びそのクリーニング方法 |
JP2001254178A (ja) | 2000-03-10 | 2001-09-18 | Tokyo Electron Ltd | 処理装置のクリーニング方法及び処理装置 |
KR20020008340A (ko) * | 2000-07-22 | 2002-01-30 | 서성기 | 클리닝장치를 구비한 ald 박막증착설비 및 그 클리닝방법 |
Family Cites Families (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3840312A (en) * | 1973-04-11 | 1974-10-08 | Control Process Inc | Dynamic pressure control system |
US4364413A (en) * | 1981-01-07 | 1982-12-21 | The Perkin-Elmer Corporation | Molar gas-flow controller |
JPS6117151A (ja) * | 1984-07-03 | 1986-01-25 | Minolta Camera Co Ltd | プラズマcvd装置 |
US4783320A (en) * | 1985-11-25 | 1988-11-08 | The United States Of America As Represented By The Secretary Of The Air Force | Rapid synthesis of indium phosphide |
JPS62273714A (ja) * | 1986-05-21 | 1987-11-27 | Clarion Co Ltd | 有機金属ガス供給方法および装置 |
JPS6370428A (ja) | 1986-09-11 | 1988-03-30 | Anelva Corp | プラズマ処理装置 |
DE3639292A1 (de) * | 1986-11-17 | 1988-05-26 | Battenfeld Gmbh | Verfahren zum spritzgiessen von thermoplastischen kunststoffen |
JP2773078B2 (ja) | 1988-03-11 | 1998-07-09 | 東京エレクトロン株式会社 | 処理装置及びその洗浄方法 |
JP2888253B2 (ja) * | 1989-07-20 | 1999-05-10 | 富士通株式会社 | 化学気相成長法およびその実施のための装置 |
JPH03290715A (ja) * | 1990-04-07 | 1991-12-20 | Iwashita Eng Kk | 圧力センサを有する定量吐出装置の圧力変更型吐出量安定ディスペンス制御装置 |
US5220515A (en) * | 1991-04-22 | 1993-06-15 | Applied Materials, Inc. | Flow verification for process gas in a wafer processing system apparatus and method |
US5565038A (en) * | 1991-05-16 | 1996-10-15 | Intel Corporation | Interhalogen cleaning of process equipment |
US5314541A (en) * | 1991-05-28 | 1994-05-24 | Tokyo Electron Limited | Reduced pressure processing system and reduced pressure processing method |
JP3039583B2 (ja) * | 1991-05-30 | 2000-05-08 | 株式会社日立製作所 | バルブ及びそれを用いた半導体製造装置 |
JP3040212B2 (ja) * | 1991-09-05 | 2000-05-15 | 株式会社東芝 | 気相成長装置 |
US5368685A (en) * | 1992-03-24 | 1994-11-29 | Hitachi, Ltd. | Dry etching apparatus and method |
JP2797233B2 (ja) * | 1992-07-01 | 1998-09-17 | 富士通株式会社 | 薄膜成長装置 |
US5380370A (en) * | 1993-04-30 | 1995-01-10 | Tokyo Electron Limited | Method of cleaning reaction tube |
JPH06330323A (ja) * | 1993-05-18 | 1994-11-29 | Mitsubishi Electric Corp | 半導体装置製造装置及びそのクリーニング方法 |
US5484484A (en) * | 1993-07-03 | 1996-01-16 | Tokyo Electron Kabushiki | Thermal processing method and apparatus therefor |
US5616208A (en) * | 1993-09-17 | 1997-04-01 | Tokyo Electron Limited | Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus |
JP2889098B2 (ja) * | 1993-10-13 | 1999-05-10 | 株式会社本山製作所 | 特定ガスの供給制御装置 |
JPH07130704A (ja) | 1993-10-22 | 1995-05-19 | Matsushita Electric Ind Co Ltd | プラズマ処理装置及び方法 |
US5777300A (en) * | 1993-11-19 | 1998-07-07 | Tokyo Electron Kabushiki Kaisha | Processing furnace for oxidizing objects |
US5614247A (en) * | 1994-09-30 | 1997-03-25 | International Business Machines Corporation | Apparatus for chemical vapor deposition of aluminum oxide |
JP3270852B2 (ja) * | 1995-04-20 | 2002-04-02 | 東京エレクトロン株式会社 | 圧力調整装置及びこれを用いた部屋の連通方法 |
US5685912A (en) * | 1995-06-20 | 1997-11-11 | Sony Corporation | Pressure control system for semiconductor manufacturing equipment |
TW371776B (en) * | 1995-10-15 | 1999-10-11 | Semiconductor Energy Lab Co Ltd | Laser irradiation apparatus and method |
JP3768575B2 (ja) * | 1995-11-28 | 2006-04-19 | アプライド マテリアルズ インコーポレイテッド | Cvd装置及びチャンバ内のクリーニングの方法 |
US5902494A (en) * | 1996-02-09 | 1999-05-11 | Applied Materials, Inc. | Method and apparatus for reducing particle generation by limiting DC bias spike |
US6030902A (en) * | 1996-02-16 | 2000-02-29 | Micron Technology Inc | Apparatus and method for improving uniformity in batch processing of semiconductor wafers |
WO1997031389A1 (fr) * | 1996-02-23 | 1997-08-28 | Tokyo Electron Limited | Dispositif de traitement thermique |
US5735960A (en) * | 1996-04-02 | 1998-04-07 | Micron Technology, Inc. | Apparatus and method to increase gas residence time in a reactor |
JP3386651B2 (ja) | 1996-04-03 | 2003-03-17 | 株式会社東芝 | 半導体装置の製造方法および半導体製造装置 |
JPH09326385A (ja) * | 1996-06-04 | 1997-12-16 | Tokyo Electron Ltd | 基板冷却方法 |
KR0183912B1 (ko) * | 1996-08-08 | 1999-05-01 | 김광호 | 다중 반응 챔버에 연결된 펌핑 설비 및 이를 사용하는 방법 |
JP3270730B2 (ja) * | 1997-03-21 | 2002-04-02 | 株式会社日立国際電気 | 基板処理装置及び基板処理方法 |
JPH10280151A (ja) | 1997-04-08 | 1998-10-20 | Fujitsu Ltd | Cvd装置のクリーニング方法 |
US6149974A (en) * | 1997-05-05 | 2000-11-21 | Applied Materials, Inc. | Method for elimination of TEOS/ozone silicon oxide surface sensitivity |
US5966499A (en) * | 1997-07-28 | 1999-10-12 | Mks Instruments, Inc. | System for delivering a substantially constant vapor flow to a chemical process reactor |
US6228170B1 (en) * | 1997-12-16 | 2001-05-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for regulating chamber pressure |
US6022483A (en) * | 1998-03-10 | 2000-02-08 | Intergrated Systems, Inc. | System and method for controlling pressure |
US6663716B2 (en) * | 1998-04-14 | 2003-12-16 | Cvd Systems, Inc. | Film processing system |
JP3396431B2 (ja) * | 1998-08-10 | 2003-04-14 | 東京エレクトロン株式会社 | 酸化処理方法および酸化処理装置 |
JP3830670B2 (ja) * | 1998-09-03 | 2006-10-04 | 三菱電機株式会社 | 半導体製造装置 |
US6383300B1 (en) * | 1998-11-27 | 2002-05-07 | Tokyo Electron Ltd. | Heat treatment apparatus and cleaning method of the same |
JP4426671B2 (ja) | 1998-11-27 | 2010-03-03 | 東京エレクトロン株式会社 | 熱処理装置及びその洗浄方法 |
US6086678A (en) * | 1999-03-04 | 2000-07-11 | Memc Electronic Materials, Inc. | Pressure equalization system for chemical vapor deposition reactors |
US6540838B2 (en) * | 2000-11-29 | 2003-04-01 | Genus, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
US6305314B1 (en) * | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
JP2000269108A (ja) * | 1999-03-15 | 2000-09-29 | Sharp Corp | 半導体製造装置の管理システム |
JP2000306884A (ja) * | 1999-04-22 | 2000-11-02 | Mitsubishi Electric Corp | プラズマ処理装置およびプラズマ処理方法 |
US6503330B1 (en) * | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
JP2001274107A (ja) * | 2000-03-28 | 2001-10-05 | Nec Kyushu Ltd | 拡散炉 |
US7011710B2 (en) * | 2000-04-10 | 2006-03-14 | Applied Materials Inc. | Concentration profile on demand gas delivery system (individual divert delivery system) |
US6453913B2 (en) * | 2000-04-27 | 2002-09-24 | Canon Kabushiki Kaisha | Method of cleaning a film deposition apparatus, method of dry etching a film deposition apparatus, and an article production method including a process based on the cleaning or dry etching method |
US6863019B2 (en) * | 2000-06-13 | 2005-03-08 | Applied Materials, Inc. | Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas |
JP2002043299A (ja) * | 2000-07-19 | 2002-02-08 | Tokyo Electron Ltd | 被処理体の熱処理方法 |
JP2002129337A (ja) * | 2000-10-24 | 2002-05-09 | Applied Materials Inc | 気相堆積方法及び装置 |
US6517891B1 (en) * | 2000-10-31 | 2003-02-11 | Nordson Corporation | Control system for metering pump and method |
US6844273B2 (en) * | 2001-02-07 | 2005-01-18 | Tokyo Electron Limited | Precleaning method of precleaning a silicon nitride film forming system |
JP4071449B2 (ja) * | 2001-03-27 | 2008-04-02 | 株式会社東芝 | センサ異常検出方法及びセンサ異常検出装置 |
JP3403181B2 (ja) * | 2001-03-30 | 2003-05-06 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
US6656282B2 (en) * | 2001-10-11 | 2003-12-02 | Moohan Co., Ltd. | Atomic layer deposition apparatus and process using remote plasma |
JP4197648B2 (ja) * | 2001-10-18 | 2008-12-17 | シーケーディ株式会社 | パルスショット式流量調整装置とパルスショット式流量調整方法 |
KR100979575B1 (ko) * | 2002-01-17 | 2010-09-01 | 썬듀 테크놀로지스 엘엘씨 | 원자층 침착 장치 및 이의 제조방법 |
JP3891848B2 (ja) * | 2002-01-17 | 2007-03-14 | 東京エレクトロン株式会社 | 処理装置および処理方法 |
KR100452318B1 (ko) * | 2002-01-17 | 2004-10-12 | 삼성전자주식회사 | 압력조절시스템 및 이를 이용하는 압력조절방법 |
JP3985899B2 (ja) * | 2002-03-28 | 2007-10-03 | 株式会社日立国際電気 | 基板処理装置 |
JP2003338499A (ja) * | 2002-05-20 | 2003-11-28 | Tokyo Electron Ltd | 膜形成方法及び膜形成装置 |
US6838114B2 (en) * | 2002-05-24 | 2005-01-04 | Micron Technology, Inc. | Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces |
US6821347B2 (en) * | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
US20040118436A1 (en) * | 2002-12-21 | 2004-06-24 | Joyce James M. | Method and apparatus for thermal gas purging |
US7344755B2 (en) * | 2003-08-21 | 2008-03-18 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers |
US7422635B2 (en) * | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
US7056806B2 (en) * | 2003-09-17 | 2006-06-06 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces |
DE10345824A1 (de) * | 2003-09-30 | 2005-05-04 | Infineon Technologies Ag | Anordnung zur Abscheidung von atomaren Schichten auf Substraten |
US7647886B2 (en) * | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
US7258892B2 (en) * | 2003-12-10 | 2007-08-21 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
JP4586544B2 (ja) * | 2004-02-17 | 2010-11-24 | 東京エレクトロン株式会社 | 被処理体の酸化方法、酸化装置及び記憶媒体 |
US7072743B2 (en) * | 2004-03-09 | 2006-07-04 | Mks Instruments, Inc. | Semiconductor manufacturing gas flow divider system and method |
US7628861B2 (en) * | 2004-12-17 | 2009-12-08 | Mks Instruments, Inc. | Pulsed mass flow delivery system and method |
US7628860B2 (en) * | 2004-04-12 | 2009-12-08 | Mks Instruments, Inc. | Pulsed mass flow delivery system and method |
JP2005322668A (ja) * | 2004-05-06 | 2005-11-17 | Renesas Technology Corp | 成膜装置および成膜方法 |
JP3945519B2 (ja) * | 2004-06-21 | 2007-07-18 | 東京エレクトロン株式会社 | 被処理体の熱処理装置、熱処理方法及び記憶媒体 |
US7412986B2 (en) * | 2004-07-09 | 2008-08-19 | Celerity, Inc. | Method and system for flow measurement and validation of a mass flow controller |
US20060165873A1 (en) * | 2005-01-25 | 2006-07-27 | Micron Technology, Inc. | Plasma detection and associated systems and methods for controlling microfeature workpiece deposition processes |
US7713883B2 (en) * | 2005-03-08 | 2010-05-11 | Hitachi Kokusai Electric Inc. | Manufacturing method of a semiconductor device, and substrate processing apparatus |
US7775508B2 (en) * | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
US7775236B2 (en) * | 2007-02-26 | 2010-08-17 | Applied Materials, Inc. | Method and apparatus for controlling gas flow to a processing chamber |
US8235001B2 (en) * | 2007-04-02 | 2012-08-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
JP4994197B2 (ja) * | 2007-11-16 | 2012-08-08 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
US8716147B2 (en) * | 2007-11-19 | 2014-05-06 | Hitachi Kokusai Electric Inc. | Manufacturing method of semiconductor device and substrate processing apparatus |
-
2002
- 2002-12-18 JP JP2002366250A patent/JP3985899B2/ja not_active Expired - Lifetime
-
2003
- 2003-03-27 KR KR1020030019041A patent/KR100802212B1/ko active IP Right Grant
- 2003-03-27 TW TW092106861A patent/TW591690B/zh not_active IP Right Cessation
- 2003-03-28 US US10/400,577 patent/US20030221779A1/en not_active Abandoned
-
2005
- 2005-11-14 US US11/271,900 patent/US20060060142A1/en not_active Abandoned
-
2009
- 2009-03-16 US US12/404,932 patent/US20090178694A1/en not_active Abandoned
-
2010
- 2010-11-24 US US12/954,369 patent/US8211802B2/en not_active Expired - Lifetime
-
2012
- 2012-06-05 US US13/489,018 patent/US8366868B2/en not_active Expired - Lifetime
-
2013
- 2013-01-25 US US13/750,745 patent/US20130133696A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0265233A (ja) * | 1988-08-31 | 1990-03-05 | Nec Yamagata Ltd | 半導体ウェーハの水分除去装置 |
JP2000328248A (ja) | 1999-05-12 | 2000-11-28 | Nissin Electric Co Ltd | 薄膜形成装置のクリーニング方法及び薄膜形成装置 |
JP2001250818A (ja) | 1999-12-28 | 2001-09-14 | Tokyo Electron Ltd | 酸化処理装置及びそのクリーニング方法 |
JP2001254178A (ja) | 2000-03-10 | 2001-09-18 | Tokyo Electron Ltd | 処理装置のクリーニング方法及び処理装置 |
KR20020008340A (ko) * | 2000-07-22 | 2002-01-30 | 서성기 | 클리닝장치를 구비한 ald 박막증착설비 및 그 클리닝방법 |
Also Published As
Publication number | Publication date |
---|---|
US20110130001A1 (en) | 2011-06-02 |
US20130133696A1 (en) | 2013-05-30 |
KR20030078699A (ko) | 2003-10-08 |
US20120240348A1 (en) | 2012-09-27 |
US8211802B2 (en) | 2012-07-03 |
JP2004006620A (ja) | 2004-01-08 |
JP3985899B2 (ja) | 2007-10-03 |
TW591690B (en) | 2004-06-11 |
US20060060142A1 (en) | 2006-03-23 |
TW200305918A (en) | 2003-11-01 |
US8366868B2 (en) | 2013-02-05 |
US20030221779A1 (en) | 2003-12-04 |
US20090178694A1 (en) | 2009-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100802212B1 (ko) | 기판 처리 장치 | |
KR101521466B1 (ko) | 가스 공급 장치, 열처리 장치, 가스 공급 방법 및 열처리 방법 | |
KR101129741B1 (ko) | 반도체 처리용 성막 장치 및 그 사용 방법 | |
KR100674467B1 (ko) | 기판 처리 장치 및 반도체 장치의 제조 방법 | |
KR100860437B1 (ko) | 기판 처리 장치 및 반도체 디바이스의 제조 방법 | |
KR101149097B1 (ko) | 반도체 처리용 성막 장치 및 그 사용 방법 | |
JP2009147379A (ja) | 半導体装置の製造方法及び基板処理装置 | |
JP3969859B2 (ja) | 基板処理装置及び半導体デバイスの製造方法 | |
JP2005064305A (ja) | 基板処理装置及び半導体デバイスの製造方法 | |
KR100591762B1 (ko) | 증착 장치 및 증착 방법 | |
KR100989028B1 (ko) | 반도체 장치의 제조 방법 및 기판 처리 장치 | |
JP4253612B2 (ja) | 基板処理装置 | |
JP5198542B2 (ja) | 半導体デバイスの製造方法、クリーニング方法および基板処理装置 | |
CN113496914A (zh) | 基板处理装置和清洁方法 | |
JP2003051452A (ja) | 半導体装置の製造方法および基板処理装置 | |
JP2007227471A (ja) | 基板処理装置 | |
JP2006066557A (ja) | 基板処理装置 | |
JP2011134748A (ja) | 半導体装置の製造方法 | |
JP6832786B2 (ja) | 掃気ノズル及びこれを用いた基板処理装置、並びにパーティクル除去方法 | |
JP2003051533A (ja) | 半導体装置の製造方法および基板処理装置 | |
CN117716062A (zh) | 半导体装置的制造方法、基板处理装置、程序以及涂布方法 | |
JP2023161122A (ja) | 成膜装置及び成膜方法 | |
CN113574640A (zh) | 半导体装置的制造方法、基板处理装置和程序 | |
JP2009081324A (ja) | 基板処理装置 | |
JP2005064538A (ja) | 基板処理装置及び半導体デバイスの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130118 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20140117 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20150119 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20160104 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20170103 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20180119 Year of fee payment: 11 |