US20030221779A1 - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
- Publication number
- US20030221779A1 US20030221779A1 US10/400,577 US40057703A US2003221779A1 US 20030221779 A1 US20030221779 A1 US 20030221779A1 US 40057703 A US40057703 A US 40057703A US 2003221779 A1 US2003221779 A1 US 2003221779A1
- Authority
- US
- United States
- Prior art keywords
- gas
- tube
- reaction tube
- cleaning gas
- supplied
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 86
- 238000012545 processing Methods 0.000 title claims abstract description 46
- 238000004140 cleaning Methods 0.000 claims abstract description 109
- 238000004891 communication Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 description 205
- 238000005530 etching Methods 0.000 description 57
- 238000000034 method Methods 0.000 description 16
- 238000012546 transfer Methods 0.000 description 10
- 239000006227 byproduct Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Definitions
- a flow rate of etching gas 4 as cleaning gas is controlled to a constant value, and the etching gas 4 is continuously supplied from a gas introducing tube 2 into the reaction tube 1 from a plurality of holes 8 through a gas nozzle 7 .
- a desired amount of gas is exhausted from the reaction tube 1 by adjusting an opening of a pressure-adjusting valve 5 connected to the gas exhausting tube 3 , thereby maintaining a pressure in the reaction tube I at a constant value.
- a “flow” is generated toward the gas exhausting tube 3 from the gas introducing tube 2 because of a shape of the reaction tube 1 or a relation between a supplying position and an exhausting position of the gas, most of etching gas is consumed at an upstream portion of the “flow” and the etching gas is less prone to reach a downstream portion of the “flow”.
- a degree of diffusion of gas is greater in a location in the reaction tube 1 (i.e., in the vicinity of the gas exhausting tube) where a pressure is low, but the degree of diffusion of gas is smaller in a location in the reaction tube (i.e., an upper end of the reaction tube 1 and the like) where the pressure is high. Therefore, etching gas is less prone to reach a high pressure location in the reaction tube 1 .
- a substrate processing apparatus comprising:
- a controller which controls an opening of the closing member to substantially stop exhaustion through the exhausting tube from a predetermined point of time before cleaning gas is supplied from the gas introducing tube into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube such that there exists a state in which exhaustion from the gas exhausting tube is stopped while the cleaning gas is supplied from the gas introducing tube into the reaction tube to fill the reaction tube with the cleaning gas under control of the controller.
- a substrate processing apparatus comprising:
- a controller which controls an opening of the closing member to substantially stop exhaustion through the exhausting tube from a predetermined point of time before cleaning gas is supplied from the gas introducing tube into the reaction tube to a predetermined point of time after the clean gas is started to be supplied into the reaction tube such that there exists a state in which exhaustion from the gas exhausting tube is stopped while the cleaning gas is supplied from the gas introducing tube into said reaction tube to repeat a first stage which fills the reaction tube with the cleaning gas under control of the controller and a second stage which thereafter exhausts gas from the reaction tube at least once.
- a substrate processing apparatus comprising:
- a cleaning gas supply member which supplies cleaning gas to the gas introducing tube
- a controller which controls an opening of the closing member to substantially stop exhaustion through the exhausting tube from a predetermined point of time before cleaning gas is supplied from the gas introducing tube into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into said reaction tube such that there exists a state in which exhaustion from the gas exhausting tube is stopped while the cleaning gas is supplied by said cleaning gas supply member through the gas introducing tube into the reaction tube.
- FIG. 1 is a perspective view of a substrate processing apparatus according to an embodiment of the present invention
- FIG. 2 is a sectional view showing a reaction furnace used in a substrate processing apparatus according to an embodiment of the present invention
- FIG. 3 is a gas system chart showing a gas system of a substrate processing apparatus according to an embodiment of the present invention
- FIG. 4 is a flowchart showing a processing flow in cleaning steps of a substrate processing apparatus according to an embodiment of the present invention
- FIG. 5 is a time chart of cleaning steps of a substrate processing apparatus according to an embodiment of the present invention.
- FIG. 6 is a flowchart showing a processing flow in cleaning steps of a substrate processing apparatus according to another embodiment of the present invention.
- FIG. 7 is a sectional view showing a conventional reaction furnace.
- a substrate processing apparatus comprises:
- a controller which controls an opening of the closing member to substantially stop exhaustion through the exhausting tube from a predetermined point of time before cleaning gas is supplied from the gas introducing tube into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube such that there exists a state in which exhaustion from the gas exhausting tube is stopped while the cleaning gas is supplied from said gas introducing tube into the reaction tube to fill the reaction tube with the cleaning gas under control of the controller.
- the expression “to substantially stop exhaustion” includes not only a case in which the exhaustion of gas is completely stopped but also a case in which exhaustion of slight exhaust amount is permissible only if cleaning gas is substantially uniformly diffused in the reaction tube. Therefore, the flow of cleaning gas in the reaction tube is substantially stopped, the reaction tube can be filled with cleaning gas by diffusing the cleaning gas, the partial pressure of etching gas in the reaction tube becomes uniform, a pressure of the etching gas rises and thus, the etching speed (cleaning speed) is also increased.
- the exhaustion from the gas exhausting tube may substantially be stopped simultaneously with or before the start of supply of the cleaning gas, and the exhaustion from the gas exhausting tube may substantially be stopped before several seconds are elapsed after the cleaning gas is supplied.
- time required for closing the exhausting tube and time required for easily diffusing cleaning gas into the reaction tube substantially entirely are taken into consideration. For example, if time required for closing the exhausting tube is two seconds and time required for easily diffusing cleaning gas into the reaction tube substantially entirely is five second, the total is seven seconds, and it is preferable that the exhaustion is stopped within the seven seconds.
- a reason why a margin of five seconds is required is that since the exhaustion is stopped after a flow of gas is produced in the reaction tube, if a distance between a supply port of gas and an exhaust port is long and the path is complicated, it is possible to allow the cleaning gas to reach the reaction tube quickly.
- a substrate processing apparatus comprises:
- a controller which controls an opening of said closing member to substantially stop exhaustion through the exhausting tube from a predetermined point of time before cleaning gas is supplied from the gas introducing tube into the reaction tube to a predetermined point of time after the cleaning gas is started to be supplied into the reaction tube such that there exists a state in which exhaustion from the gas exhausting tube is stopped while the cleaning gas is supplied from the gas introducing tube into the reaction tube to repeat a first stage fills the reaction tube with the cleaning gas under control of the controller and a second stage which thereafter exhausts gas from the reaction tube at least once.
- the second stage since a reaction material after the cleaning reaction hinders subsequent cleaning reaction, it is possible to enhance the cleaning efficiency by once exhausting gas.
- the number of repetitions of the first and second stages depends on a film thickness and the like.
- a cleaning gas supply member which supplies cleaning gas to the gas introducing tube
- a controller which controls an opening of the closing member to substantially stop exhaustion through the exhausting tube from a predetermined point of time before cleaning gas is supplied from the gas introducing tube into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube such that there exists a state in which exhaustion from the gas exhausting tube is stopped while the cleaning gas is supplied by the cleaning gas supply member through the gas introducing tube into the reaction tube.
- a semiconductor device is produced through steps including a substrate processing step which uses one of the above-mentioned substrate processing apparatus according to first to third preferred aspect of the present invention, and which substantially stops exhaustion through the exhausting tube from a predetermined point of time before the cleaning gas is supplied from the gas introducing tube into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube such that there exists a state in which exhaustion from the gas exhausting tube is stopped while the cleaning gas is supplied from the gas introducing tube into the reaction tube to fill the reaction tube with the cleaning gas under control of the controller.
- FIG. 1 shows a substrate processing apparatus 20 according to the embodiment of the invention.
- the substrate processing apparatus 20 is of a vertical type and has a casing 22 in which essential members are disposed.
- a pod stage 24 is connected to the casing 22 , and the pod 26 is transferred to the pod stage 24 .
- 25 substrates are accommodated for example, and the pod 26 is closed with a lid (not shown) and in this state, the pod 26 is set on the pod stage 24 .
- a pod transfer device 28 is disposed in the casing 22 at a position opposed to the pod stage 24 .
- Pod shelves 30 , a pod opener 32 and a substrate-number detector 34 are disposed in the vicinity of the transfer device 28 .
- the pod transfer device 28 transfers the pod 26 between the pod stage 24 , the pod shelves 30 and the pod opener 32 .
- the pod opener 32 opens the lid of the pod 26 , and the substrate-number detector 34 detects the number of substrates in the opened pod 26 .
- a substrate carrying device 36 , a notch aligner 38 and a substrate supporting body 40 (boat) are further disposed in the casing 22 .
- the substrate carrying device 36 has an arm 42 capable of taking out five substrates for example, and the substrate carrying device 36 transfers the substrates between the pod 26 placed on the pod opener 32 , the notch aligner 38 and the substrate supporting body 40 by moving the arm 42 .
- the notch aligner 38 detects a notch and orientation flat formed in the substrates and aligns the substrates.
- FIG. 2 shows a reaction furnace 50 .
- the reaction furnace 50 includes a reaction tube 52 .
- the substrate supporting body is inserted in the reaction tube 52 .
- a lower portion of the reaction tube 52 is opened so that the substrate supporting body can be inserted therethrough, and this opened portion is tightly closed by a seal cap 54 (shown in FIG. 1 also).
- a heater 56 (shown in FIG. 3) is disposed around the reaction tube 52 .
- a gas introducing tube 58 for supplying reaction gas and cleaning gas and a gas exhausting tube 60 for exhausting reaction gas and cleaning gas are connected to the reaction tube 52 .
- Gas supplied from the gas introducing tube 58 is supplied into the reaction tube 52 from a large number of holes 64 of a gas nozzle 62 formed in the reaction tube 52 .
- the gas exhausting tube 60 is provided with a closing member 66 comprising a pressure-adjusting valve for example, and the closing member 66 has a shut-off function.
- the pod 26 holding a plurality of substrates therein is set on the pod stage 24 , the pod 26 is transferred from the pod stage 24 to the pod shelf 30 and is stocked on the pod shelf 30 .
- the pod 26 stocked on the pod shelf 30 is transferred to the pod opener 32 by the pod transfer device 28 , the lid of the pod 26 is opened by the pod opener 32 , and the number of substrates accommodated in the pod 26 is detected by the substrate-number detector 34 .
- the substrate carrying device 36 takes the substrates out from the pod 26 located at the position of the pod opener 32 , and moves the pod 26 to the notch aligner 38 .
- the notch aligner 38 notches of the substrates are detected while rotating the substrates, and the plurality of substrates are aligned to the same position based on the detected information.
- the substrate carrying device 36 takes the substrates out from the notch aligner 38 and moves them to the substrate supporting body 40 .
- the substrate supporting body 40 in which the plurality of substrates are accommodated is loaded into the reaction furnace 50 whose temperature is set to a predetermined value, and the reaction tube 52 is tightly closed by the seal cap 54 .
- reaction gas is supplied into the reaction tube 52 from the gas introducing tube 58 .
- the substrates are processed in accordance with preset temperature rising and lowering program while monitoring a temperature in the reaction tube 52 .
- the temperature is lowered to a predetermined value and then, the substrate supporting body 40 is unloaded from the reaction furnace 50 , and the substrate supporting body 40 is brought into a standby state at a predetermined position until all of the substrates supported by the substrate supporting body 40 are cooled.
- the substrate carrying device 36 takes the substrates out from the substrate supporting body 40 , and transfers the substrates to an empty pod 26 which is set to the pod opener 32 .
- the transfer device 28 transfers the pod 26 holding the substrates therein to the pod shelf 30 and further transfers the pod 26 to the pod stage 24 and the operation is completed.
- FIG. 3 shows a gas system of the above-described substrate processing apparatus.
- a first storage tank 68 storing N2 gas for purging is connected to the reaction tube 52 through a first manual valve 70 , a first open/close valve 72 , first flow-rate control valve 74 , the second open/close valve 76 and the gas introducing tube 58 .
- a second storage tank 78 storing cleaning gas is connected to the reaction tube 52 through a second manual valve 80 , a third open/close valve 82 , a second flow-rate control valve 84 , a fourth open/close valve 86 and the gas introducing tube 58 .
- a third storage tank 88 storing first reaction gas is connected to the reaction tube 52 through a third manual valve 90 , a fifth open/close valve 92 , a third flow-rate control valve 94 , a sixth open/close valve 96 and the gas introducing tube 58 .
- a third storage tank 98 storing second reaction gas is connected to the reaction tube 52 through a fourth manual valve 100 , a seventh open/close valve 102 , a fourth flow-rate control valve 104 , an eighth open/close valve 106 and the gas introducing tube 58 .
- the gas exhausting tube 60 having the closing member 66 is connected to a dry pump 108 .
- the reaction tube 52 is evacuated by the operation of the dry pump 108 .
- a controller (control section) 110 comprises a computer for example, and controls the opening and closing operations of the open/close valves 72 , 76 , 82 , 86 , 92 , 96 , 102 and 106 , the flow rates of the flow-rate control valves 74 , 84 , 94 and 104 , electric power to the heater 56 , opening of the closing member 66 , the actuation of the dry pump 108 , and the like.
- reaction by-product is deposited in a reaction space, e.g., on an inner wall of the reaction tube 52 , the deposited by-product is peeled off with time, and this becomes particles, and there is a problem that the particles attached onto the substrate and deteriorate the yield.
- etching gas e.g., NF, gas
- the cleaning gas is supplied as the cleaning gas, thereby carrying out self-cleaning in the reaction space.
- the cleaning operation is not shown in FIG. 2, the cleaning is carried out in a state in which the substrate supporting body is inserted into the reaction tube 52 , and the by-product deposited on the substrate supporting body is also removed.
- FIG. 4 is a flowchart showing an example of the control operation in cleaning steps of the controller 110 .
- FIG. 5 shows a time chart in the control operation example.
- step S 10 the closing member 66 is closed in a state in which a pressure in the reaction tube 52 is set to a base pressure.
- step S 12 the fourth open/close valve 86 is opened.
- step S 14 a flow rate of the second flow-rate control valve 84 is set to a first set value. This first set value is 1.5 slm for example.
- step S 16 the third open/close valve 82 is opened and the supply of etching gas is started (t 0 in FIG. 5). With this, a pressure in the reaction tube 52 gradually rises. This state is maintained for time t 1 , and the pressure in the reaction tube 52 when the time t 1 is elapsed reaches pl.
- the time t 1 is 25 seconds for example, and the p 1 is 10 Torr for example. If the time t 1 is elapsed, in next step S 18 , the flow rate of the second flow-rate control valve 84 is set to a second set value. The second set value is 0.25 slm for example. With this, the pressure in the reaction tube 52 is increased from p 1 to p 2 or maintained at p 1 . In this embodiment, the p 2 is 10 Torr and is equal to the p 1 . This state is maintained for time t 2 . The time t 2 is 65 seconds for example.
- the flow rate of the second flow-rate control valve 84 is reduced from the first set value (e.g., 1.5 ⁇ m) to the second set value (e.g., 0.25 slm), the following effects can be obtained.
- the procedure up to here is a first stage.
- the etching gas is allowed to flow into the reaction tube 52 from the large number of holes 64 through the gas nozzle 62 extending from the gas introducing tube 58 in the longitudinal direction of the reaction tube 52 .
- the closing member 66 of the gas exhausting tube 60 is closed, the gas fills in the reaction tube 52 and is contained therein.
- a reference number 114 shows a diffusing state of the etching gas 112 after it is supplied into the reaction tube 52 .
- a reference number 116 shows a phantom region where the etching gas 112 is entirely diffused in the reaction tube 52 uniformly.
- removal of the reaction by-product deposited on the inner wall of the reaction tube 52 can be expressed by the following principle.
- Si 3 N 4 which is the reaction by-product (solid state) and 4NF 3 which is the etching gas are reacted with each other and product gas of the Si 3 N 4 and 4NF 3 is produced, thereby removing the reaction by-product.
- a temperature in the reaction tube 52 during this is maintained at 630° C.
- step S 20 If time t 2 is elapsed after the second flow-rate control valve 84 is set to the second set value in step S 18 as described above, the procedure is proceeded to step 520 .
- the third open/close valve 82 is closed in step S 20
- the fourth open/close valve 86 is closed in step S 22
- the closing member 66 is opened in step S 24 .
- the etching gas in the reaction tube 52 is exhausted through the gas exhausting tube 60 , and a pressure in the reaction tube 52 is abruptly reduced to the base pressure.
- the procedure up to here is a second stage.
- the etching gas and the product gas are exhausted.
- step S 26 it is judged whether the processes of the first and second stages are repeated predetermined times. If it is judged in step S 26 that the processes are repeated the predetermined times, the procedure is proceeded to a next process (substrate processing). On the other hand, if it is judged in step S 26 that the processes are not repeated the predetermined times, the procedure is returned to step S 10 , and the processes of the first and second stages are executed repeatedly.
- step S 22 time t 3 is elapsed after the closing member 66 is opened, and the etching gas and the product gas in the reaction tube 52 are sufficiently exhausted, and the closing member 66 is closed in the next cycle. This time t 3 is four seconds for example.
- uniform cleaning can be carried out by dividing the cleaning step in the reaction tube 52 into the first stage and the second stage and carrying out the stages, but if it is desired to further enhance the cleaning efficiency, more uniform etching with no remainder of etching can be carried out by repeating the first and second stages at least two times or more.
- the uniform cleaning in the reaction tube can be carried out.
- the etching gas may be supplied while exhausting the etching gas only if the exhausting amount is set to such a degree that the flow of etching gas supplied into the reaction tube does not become nonuniform and the uniform diffusion of gas is not affected.
- etching gas may slightly be supplied instead of completely stopping the supply of the etching gas. If the first stage is not carried out again after the second stage, it is preferable that the supply of the etching gas is completely stopped and the gas is exhausted because the gas (etching gas) is not remained for the next processing.
- FIG. 6 shows another embodiment. This other embodiment is different from the previous embodiment in the following point. That is, the closing member is closed and exhausting operation of gas is stopped before the start of supply of cleaning gas in the previous embodiment, but the closing member is closed and exhausting operation of gas is stopped after the start of supply of cleaning gas in this other embodiment.
- steps S 12 , S 14 and S 16 are first executed, and cleaning gas is supplied to the reaction tube. Then, after predetermined time is elapsed, step S 10 is executed and the exhausting operation is stopped.
- time required for closing the closing member and time required for easily diffuing cleaning gas into the reaction tube substantially entirely are taken into consideration. For example, if time required for closing the closing member is two seconds and time required for easily diffusing cleaning gas into the reaction tube substantially entirely are taken into consideration is five second, the total is seven seconds, and it is preferable that the exhausting operation is stopped within the seven seconds.
- a reason why a margin of five seconds is required is that since the exhausting operation is stopped after a flow of gas is produced in the reaction tube, if a distance between a supply port (e.g., outlet of the fourth open/close valve 86 ) of gas and an exhaust port (inlet of the gas exhausting tube 60 ) is long and the path is complicated, it is possible to allow the cleaning gas to reach the reaction tube quickly.
- a supply port e.g., outlet of the fourth open/close valve 86
- the substrate processing apparatus is described as a batch type apparatus which processes a plurality of substrates, but the substrate processing apparatus is not limited to this, and a single substrate-feeding type apparatus may also be employed.
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Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/271,900 US20060060142A1 (en) | 2002-03-28 | 2005-11-14 | Substrate processing apparatus |
US12/404,932 US20090178694A1 (en) | 2002-03-28 | 2009-03-16 | Substrate processing apparatus |
US12/954,369 US8211802B2 (en) | 2002-03-28 | 2010-11-24 | Substrate processing apparatus |
US13/489,018 US8366868B2 (en) | 2002-03-28 | 2012-06-05 | Substrate processing apparatus |
US13/750,745 US20130133696A1 (en) | 2002-03-28 | 2013-01-25 | Substrate processing apparatus |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2002-092733 | 2002-03-28 | ||
JP2002092733 | 2002-03-28 | ||
JP2002366250A JP3985899B2 (ja) | 2002-03-28 | 2002-12-18 | 基板処理装置 |
JP2002-366250 | 2002-12-18 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/271,900 Continuation US20060060142A1 (en) | 2002-03-28 | 2005-11-14 | Substrate processing apparatus |
Publications (1)
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US20030221779A1 true US20030221779A1 (en) | 2003-12-04 |
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ID=29585950
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/400,577 Abandoned US20030221779A1 (en) | 2002-03-28 | 2003-03-28 | Substrate processing apparatus |
US11/271,900 Abandoned US20060060142A1 (en) | 2002-03-28 | 2005-11-14 | Substrate processing apparatus |
US12/404,932 Abandoned US20090178694A1 (en) | 2002-03-28 | 2009-03-16 | Substrate processing apparatus |
US12/954,369 Expired - Lifetime US8211802B2 (en) | 2002-03-28 | 2010-11-24 | Substrate processing apparatus |
US13/489,018 Expired - Lifetime US8366868B2 (en) | 2002-03-28 | 2012-06-05 | Substrate processing apparatus |
US13/750,745 Abandoned US20130133696A1 (en) | 2002-03-28 | 2013-01-25 | Substrate processing apparatus |
Family Applications After (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/271,900 Abandoned US20060060142A1 (en) | 2002-03-28 | 2005-11-14 | Substrate processing apparatus |
US12/404,932 Abandoned US20090178694A1 (en) | 2002-03-28 | 2009-03-16 | Substrate processing apparatus |
US12/954,369 Expired - Lifetime US8211802B2 (en) | 2002-03-28 | 2010-11-24 | Substrate processing apparatus |
US13/489,018 Expired - Lifetime US8366868B2 (en) | 2002-03-28 | 2012-06-05 | Substrate processing apparatus |
US13/750,745 Abandoned US20130133696A1 (en) | 2002-03-28 | 2013-01-25 | Substrate processing apparatus |
Country Status (4)
Country | Link |
---|---|
US (6) | US20030221779A1 (ko) |
JP (1) | JP3985899B2 (ko) |
KR (1) | KR100802212B1 (ko) |
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USD1022904S1 (en) * | 2021-09-15 | 2024-04-16 | Kokusai Electric Corporation | Tubular reactor |
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Also Published As
Publication number | Publication date |
---|---|
US20110130001A1 (en) | 2011-06-02 |
US20130133696A1 (en) | 2013-05-30 |
KR20030078699A (ko) | 2003-10-08 |
US20120240348A1 (en) | 2012-09-27 |
US8211802B2 (en) | 2012-07-03 |
JP2004006620A (ja) | 2004-01-08 |
KR100802212B1 (ko) | 2008-02-11 |
JP3985899B2 (ja) | 2007-10-03 |
TW591690B (en) | 2004-06-11 |
US20060060142A1 (en) | 2006-03-23 |
TW200305918A (en) | 2003-11-01 |
US8366868B2 (en) | 2013-02-05 |
US20090178694A1 (en) | 2009-07-16 |
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