USD791090S1 - Reaction tube - Google Patents
Reaction tube Download PDFInfo
- Publication number
- USD791090S1 USD791090S1 US29/555,822 US201629555822F USD791090S US D791090 S1 USD791090 S1 US D791090S1 US 201629555822 F US201629555822 F US 201629555822F US D791090 S USD791090 S US D791090S
- Authority
- US
- United States
- Prior art keywords
- reaction tube
- view
- along line
- cross sectional
- taken along
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
Claims (1)
- The ornamental design for a reaction tube, as shown and described.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-019682 | 2015-09-04 | ||
JPD2015-19682F JP1546512S (en) | 2015-09-04 | 2015-09-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
USD791090S1 true USD791090S1 (en) | 2017-07-04 |
Family
ID=55522530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US29/555,822 Active USD791090S1 (en) | 2015-09-04 | 2016-02-25 | Reaction tube |
Country Status (3)
Country | Link |
---|---|
US (1) | USD791090S1 (en) |
JP (1) | JP1546512S (en) |
TW (1) | TWD181481S (en) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD842823S1 (en) * | 2017-08-10 | 2019-03-12 | Kokusai Electric Corporation | Reaction tube |
USD842824S1 (en) * | 2017-08-09 | 2019-03-12 | Kokusai Electric Corporation | Reaction tube |
USD843958S1 (en) * | 2017-08-10 | 2019-03-26 | Kokusai Electric Corporation | Reaction tube |
USD853979S1 (en) * | 2017-12-27 | 2019-07-16 | Kokusai Electric Corporation | Reaction tube |
USD901406S1 (en) * | 2019-03-20 | 2020-11-10 | Kokusai Electric Corporation | Inner tube of reactor for semiconductor fabrication |
USD931823S1 (en) * | 2020-01-29 | 2021-09-28 | Kokusai Electric Corporation | Reaction tube |
USD971167S1 (en) * | 2019-08-28 | 2022-11-29 | Applied Materials, Inc. | Lower shield for a substrate processing chamber |
US11542601B2 (en) * | 2016-02-09 | 2023-01-03 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method of manufacturing semiconductor device |
USD1019581S1 (en) * | 2022-05-30 | 2024-03-26 | Kokusai Electric Corporation | Inner tube of reaction tube for semiconductor manufacturing equipment |
USD1019582S1 (en) * | 2022-05-30 | 2024-03-26 | Kokusai Electric Corporation | Inner tube of reaction tube for semiconductor manufacturing equipment |
USD1019583S1 (en) * | 2022-05-30 | 2024-03-26 | Kokusai Electric Corporation | Inner tube of reaction tube for semiconductor manufacturing equipment |
USD1022907S1 (en) * | 2022-03-01 | 2024-04-16 | Kokusai Electric Corporation | Tubular reactor |
USD1022905S1 (en) * | 2022-03-01 | 2024-04-16 | Kokusai Electric Corporation | Tubular reactor |
USD1022906S1 (en) * | 2022-03-01 | 2024-04-16 | Kokusai Electric Corporation | Tubular reactor |
USD1022904S1 (en) * | 2021-09-15 | 2024-04-16 | Kokusai Electric Corporation | Tubular reactor |
Citations (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4950870A (en) * | 1987-11-21 | 1990-08-21 | Tel Sagami Limited | Heat-treating apparatus |
USD405062S (en) * | 1997-08-20 | 1999-02-02 | Tokyo Electron Ltd. | Processing tube for use in a semiconductor wafer heat processing apparatus |
USD405431S (en) * | 1997-08-20 | 1999-02-09 | Tokyo Electron Ltd. | Tube for use in a semiconductor wafer heat processing apparatus |
USD405429S (en) * | 1997-01-31 | 1999-02-09 | Tokyo Electron Limited | Processing tube for use in a semiconductor wafer heat processing apparatus |
USD406113S (en) * | 1997-01-31 | 1999-02-23 | Tokyo Electron Limited | Processing tube for use in a semiconductor wafer heat processing apparatus |
US5948300A (en) * | 1997-09-12 | 1999-09-07 | Kokusai Bti Corporation | Process tube with in-situ gas preheating |
USD417438S (en) * | 1997-01-31 | 1999-12-07 | Tokyo Electron Limited | Quartz outer tube |
USD423463S (en) * | 1997-01-31 | 2000-04-25 | Tokyo Electron Limited | Quartz process tube |
USD424024S (en) * | 1997-01-31 | 2000-05-02 | Tokyo Electron Limited | Quartz process tube |
US6251189B1 (en) * | 1999-02-18 | 2001-06-26 | Kokusai Electric Co., Ltd. | Substrate processing apparatus and substrate processing method |
US20030221779A1 (en) * | 2002-03-28 | 2003-12-04 | Kazuyuki Okuda | Substrate processing apparatus |
US20080083372A1 (en) * | 2006-08-04 | 2008-04-10 | Hisashi Inoue | Heat processing apparatus for semiconductor process |
USD586768S1 (en) * | 2006-10-12 | 2009-02-17 | Tokyo Electron Limited | Process tube for manufacturing semiconductor wafers |
US20090194521A1 (en) * | 2008-01-31 | 2009-08-06 | Tokyo Electron Limited | Thermal processing furnace |
USD600659S1 (en) * | 2006-09-12 | 2009-09-22 | Tokyo Electron Limited | Process tube for manufacturing semiconductor wafers |
US20090250005A1 (en) * | 2008-04-03 | 2009-10-08 | Tokyo Electron Limited | Reaction tube and heat processing apparatus for a semiconductor process |
USD610559S1 (en) * | 2008-05-30 | 2010-02-23 | Hitachi Kokusai Electric, Inc. | Reaction tube |
USD611013S1 (en) * | 2008-03-28 | 2010-03-02 | Tokyo Electron Limited | Process tube for manufacturing semiconductor wafers |
USD618638S1 (en) * | 2008-05-09 | 2010-06-29 | Hitachi Kokusai Electric, Inc. | Reaction tube |
USD619630S1 (en) * | 2007-05-08 | 2010-07-13 | Tokyo Electron Limited | Process tube for manufacturing semiconductor wafers |
USD711843S1 (en) * | 2013-06-28 | 2014-08-26 | Hitachi Kokusai Electric Inc. | Reaction tube |
USD719114S1 (en) * | 2013-06-28 | 2014-12-09 | Hitachi Kokusai Electric Inc. | Reaction tube |
USD720707S1 (en) * | 2013-06-28 | 2015-01-06 | Hitachi Kokusai Electric Inc. | Reaction tube |
USD725053S1 (en) * | 2011-11-18 | 2015-03-24 | Tokyo Electron Limited | Outer tube for process tube for manufacturing semiconductor wafers |
USD725055S1 (en) * | 2013-06-28 | 2015-03-24 | Hitachi Kokusai Electric Inc. | Reaction tube |
USD739832S1 (en) * | 2013-06-28 | 2015-09-29 | Hitachi Kokusai Electric Inc. | Reaction tube |
USD770993S1 (en) * | 2015-09-04 | 2016-11-08 | Hitachi Kokusai Electric Inc. | Reaction tube |
USD772824S1 (en) * | 2015-02-25 | 2016-11-29 | Hitachi Kokusai Electric Inc. | Reaction tube |
-
2015
- 2015-09-04 JP JPD2015-19682F patent/JP1546512S/ja active Active
-
2016
- 2016-02-25 US US29/555,822 patent/USD791090S1/en active Active
- 2016-03-02 TW TW105304215F patent/TWD181481S/en unknown
Patent Citations (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4950870A (en) * | 1987-11-21 | 1990-08-21 | Tel Sagami Limited | Heat-treating apparatus |
USD405429S (en) * | 1997-01-31 | 1999-02-09 | Tokyo Electron Limited | Processing tube for use in a semiconductor wafer heat processing apparatus |
USD406113S (en) * | 1997-01-31 | 1999-02-23 | Tokyo Electron Limited | Processing tube for use in a semiconductor wafer heat processing apparatus |
USD417438S (en) * | 1997-01-31 | 1999-12-07 | Tokyo Electron Limited | Quartz outer tube |
USD423463S (en) * | 1997-01-31 | 2000-04-25 | Tokyo Electron Limited | Quartz process tube |
USD424024S (en) * | 1997-01-31 | 2000-05-02 | Tokyo Electron Limited | Quartz process tube |
USD405062S (en) * | 1997-08-20 | 1999-02-02 | Tokyo Electron Ltd. | Processing tube for use in a semiconductor wafer heat processing apparatus |
USD405431S (en) * | 1997-08-20 | 1999-02-09 | Tokyo Electron Ltd. | Tube for use in a semiconductor wafer heat processing apparatus |
US5948300A (en) * | 1997-09-12 | 1999-09-07 | Kokusai Bti Corporation | Process tube with in-situ gas preheating |
US6251189B1 (en) * | 1999-02-18 | 2001-06-26 | Kokusai Electric Co., Ltd. | Substrate processing apparatus and substrate processing method |
US20030221779A1 (en) * | 2002-03-28 | 2003-12-04 | Kazuyuki Okuda | Substrate processing apparatus |
US20080083372A1 (en) * | 2006-08-04 | 2008-04-10 | Hisashi Inoue | Heat processing apparatus for semiconductor process |
USD600659S1 (en) * | 2006-09-12 | 2009-09-22 | Tokyo Electron Limited | Process tube for manufacturing semiconductor wafers |
USD586768S1 (en) * | 2006-10-12 | 2009-02-17 | Tokyo Electron Limited | Process tube for manufacturing semiconductor wafers |
USD619630S1 (en) * | 2007-05-08 | 2010-07-13 | Tokyo Electron Limited | Process tube for manufacturing semiconductor wafers |
US20090194521A1 (en) * | 2008-01-31 | 2009-08-06 | Tokyo Electron Limited | Thermal processing furnace |
USD611013S1 (en) * | 2008-03-28 | 2010-03-02 | Tokyo Electron Limited | Process tube for manufacturing semiconductor wafers |
US20090250005A1 (en) * | 2008-04-03 | 2009-10-08 | Tokyo Electron Limited | Reaction tube and heat processing apparatus for a semiconductor process |
USD618638S1 (en) * | 2008-05-09 | 2010-06-29 | Hitachi Kokusai Electric, Inc. | Reaction tube |
USD610559S1 (en) * | 2008-05-30 | 2010-02-23 | Hitachi Kokusai Electric, Inc. | Reaction tube |
USD725053S1 (en) * | 2011-11-18 | 2015-03-24 | Tokyo Electron Limited | Outer tube for process tube for manufacturing semiconductor wafers |
USD711843S1 (en) * | 2013-06-28 | 2014-08-26 | Hitachi Kokusai Electric Inc. | Reaction tube |
USD719114S1 (en) * | 2013-06-28 | 2014-12-09 | Hitachi Kokusai Electric Inc. | Reaction tube |
USD720707S1 (en) * | 2013-06-28 | 2015-01-06 | Hitachi Kokusai Electric Inc. | Reaction tube |
USD725055S1 (en) * | 2013-06-28 | 2015-03-24 | Hitachi Kokusai Electric Inc. | Reaction tube |
USD739832S1 (en) * | 2013-06-28 | 2015-09-29 | Hitachi Kokusai Electric Inc. | Reaction tube |
USD772824S1 (en) * | 2015-02-25 | 2016-11-29 | Hitachi Kokusai Electric Inc. | Reaction tube |
USD770993S1 (en) * | 2015-09-04 | 2016-11-08 | Hitachi Kokusai Electric Inc. | Reaction tube |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11952664B2 (en) | 2016-02-09 | 2024-04-09 | Kokusai Electric Corporation | Substrate processing apparatus and method of manufacturing semiconductor device |
US11542601B2 (en) * | 2016-02-09 | 2023-01-03 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method of manufacturing semiconductor device |
USD842824S1 (en) * | 2017-08-09 | 2019-03-12 | Kokusai Electric Corporation | Reaction tube |
USD843958S1 (en) * | 2017-08-10 | 2019-03-26 | Kokusai Electric Corporation | Reaction tube |
USD842823S1 (en) * | 2017-08-10 | 2019-03-12 | Kokusai Electric Corporation | Reaction tube |
USD853979S1 (en) * | 2017-12-27 | 2019-07-16 | Kokusai Electric Corporation | Reaction tube |
USD901406S1 (en) * | 2019-03-20 | 2020-11-10 | Kokusai Electric Corporation | Inner tube of reactor for semiconductor fabrication |
USD971167S1 (en) * | 2019-08-28 | 2022-11-29 | Applied Materials, Inc. | Lower shield for a substrate processing chamber |
USD931823S1 (en) * | 2020-01-29 | 2021-09-28 | Kokusai Electric Corporation | Reaction tube |
USD1022904S1 (en) * | 2021-09-15 | 2024-04-16 | Kokusai Electric Corporation | Tubular reactor |
USD1022907S1 (en) * | 2022-03-01 | 2024-04-16 | Kokusai Electric Corporation | Tubular reactor |
USD1022905S1 (en) * | 2022-03-01 | 2024-04-16 | Kokusai Electric Corporation | Tubular reactor |
USD1022906S1 (en) * | 2022-03-01 | 2024-04-16 | Kokusai Electric Corporation | Tubular reactor |
USD1019583S1 (en) * | 2022-05-30 | 2024-03-26 | Kokusai Electric Corporation | Inner tube of reaction tube for semiconductor manufacturing equipment |
USD1019582S1 (en) * | 2022-05-30 | 2024-03-26 | Kokusai Electric Corporation | Inner tube of reaction tube for semiconductor manufacturing equipment |
USD1019581S1 (en) * | 2022-05-30 | 2024-03-26 | Kokusai Electric Corporation | Inner tube of reaction tube for semiconductor manufacturing equipment |
Also Published As
Publication number | Publication date |
---|---|
JP1546512S (en) | 2016-03-22 |
TWD181481S (en) | 2017-02-21 |
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