USD772824S1 - Reaction tube - Google Patents

Reaction tube Download PDF

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Publication number
USD772824S1
USD772824S1 US29/536,784 US201529536784F USD772824S US D772824 S1 USD772824 S1 US D772824S1 US 201529536784 F US201529536784 F US 201529536784F US D772824 S USD772824 S US D772824S
Authority
US
United States
Prior art keywords
reaction tube
view
taken along
along line
cross sectional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US29/536,784
Inventor
Hidenari YOSHIDA
Tomoshi Taniyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Assigned to HITACHI KOKUSAI ELECTRIC INC. reassignment HITACHI KOKUSAI ELECTRIC INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TANIYAMA, TOMOSHI, YOSHIDA, HIDENARI
Application granted granted Critical
Publication of USD772824S1 publication Critical patent/USD772824S1/en
Assigned to Kokusai Electric Corporation reassignment Kokusai Electric Corporation ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HITACHI KOKUSAI ELECTRIC INC.
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Description

FIG. 1 is a perspective view of a reaction tube showing my new design;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a rear elevational view thereof;
FIG. 4 is a left side elevational view thereof;
FIG. 5 is a right side elevational view thereof;
FIG. 6 is a top plan view thereof; and
FIG. 7 is a bottom plan view thereof.
FIG. 8 is a cross sectional view taken along line 8-8 in FIG. 2 thereof;
FIG. 9 is a cross sectional view taken along line 9-9 in FIG. 2 thereof;
FIG. 10 is a cross sectional view taken along line 10-10 in FIG. 4 thereof; and,
FIG. 11 is a cross sectional view taken along line 11-11 in FIG. 4 thereof.

Claims (1)

    CLAIM
  1. The ornamental design for a reaction tube, as shown and described.
US29/536,784 2015-02-25 2015-08-19 Reaction tube Active USD772824S1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-003957 2015-02-25
JPD2015-3957F JP1535455S (en) 2015-02-25 2015-02-25

Publications (1)

Publication Number Publication Date
USD772824S1 true USD772824S1 (en) 2016-11-29

Family

ID=54293783

Family Applications (1)

Application Number Title Priority Date Filing Date
US29/536,784 Active USD772824S1 (en) 2015-02-25 2015-08-19 Reaction tube

Country Status (3)

Country Link
US (1) USD772824S1 (en)
JP (1) JP1535455S (en)
TW (1) TWD175119S (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD790490S1 (en) * 2015-09-04 2017-06-27 Hitachi Kokusai Electric Inc. Reaction tube
USD791090S1 (en) * 2015-09-04 2017-07-04 Hitachi Kokusai Electric Inc. Reaction tube
USD842824S1 (en) * 2017-08-09 2019-03-12 Kokusai Electric Corporation Reaction tube
USD842823S1 (en) * 2017-08-10 2019-03-12 Kokusai Electric Corporation Reaction tube
USD843958S1 (en) * 2017-08-10 2019-03-26 Kokusai Electric Corporation Reaction tube
USD853979S1 (en) * 2017-12-27 2019-07-16 Kokusai Electric Corporation Reaction tube
USD901406S1 (en) * 2019-03-20 2020-11-10 Kokusai Electric Corporation Inner tube of reactor for semiconductor fabrication
USD931823S1 (en) * 2020-01-29 2021-09-28 Kokusai Electric Corporation Reaction tube
US11542601B2 (en) * 2016-02-09 2023-01-03 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method of manufacturing semiconductor device
USD986826S1 (en) * 2020-03-10 2023-05-23 Kokusai Electric Corporation Reaction tube
USD1019582S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment
USD1019583S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment
USD1019581S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment
USD1022905S1 (en) * 2022-03-01 2024-04-16 Kokusai Electric Corporation Tubular reactor
USD1022906S1 (en) * 2022-03-01 2024-04-16 Kokusai Electric Corporation Tubular reactor
USD1022904S1 (en) * 2021-09-15 2024-04-16 Kokusai Electric Corporation Tubular reactor
USD1022907S1 (en) * 2022-03-01 2024-04-16 Kokusai Electric Corporation Tubular reactor

Citations (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD405062S (en) * 1997-08-20 1999-02-02 Tokyo Electron Ltd. Processing tube for use in a semiconductor wafer heat processing apparatus
USD405429S (en) * 1997-01-31 1999-02-09 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD405431S (en) * 1997-08-20 1999-02-09 Tokyo Electron Ltd. Tube for use in a semiconductor wafer heat processing apparatus
USD406113S (en) * 1997-01-31 1999-02-23 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
US5948300A (en) * 1997-09-12 1999-09-07 Kokusai Bti Corporation Process tube with in-situ gas preheating
USD417438S (en) * 1997-01-31 1999-12-07 Tokyo Electron Limited Quartz outer tube
USD423463S (en) * 1997-01-31 2000-04-25 Tokyo Electron Limited Quartz process tube
USD424024S (en) * 1997-01-31 2000-05-02 Tokyo Electron Limited Quartz process tube
US20030221779A1 (en) * 2002-03-28 2003-12-04 Kazuyuki Okuda Substrate processing apparatus
USD521464S1 (en) * 2003-11-04 2006-05-23 Tokyo Electron Limited Process tube for semiconductor device manufacturing apparatus
US20080083372A1 (en) * 2006-08-04 2008-04-10 Hisashi Inoue Heat processing apparatus for semiconductor process
USD586768S1 (en) * 2006-10-12 2009-02-17 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
US20090194521A1 (en) * 2008-01-31 2009-08-06 Tokyo Electron Limited Thermal processing furnace
USD600659S1 (en) * 2006-09-12 2009-09-22 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
US20090250005A1 (en) * 2008-04-03 2009-10-08 Tokyo Electron Limited Reaction tube and heat processing apparatus for a semiconductor process
USD610559S1 (en) * 2008-05-30 2010-02-23 Hitachi Kokusai Electric, Inc. Reaction tube
USD611013S1 (en) * 2008-03-28 2010-03-02 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD618638S1 (en) * 2008-05-09 2010-06-29 Hitachi Kokusai Electric, Inc. Reaction tube
USD711843S1 (en) * 2013-06-28 2014-08-26 Hitachi Kokusai Electric Inc. Reaction tube
USD719114S1 (en) * 2013-06-28 2014-12-09 Hitachi Kokusai Electric Inc. Reaction tube
USD720707S1 (en) * 2013-06-28 2015-01-06 Hitachi Kokusai Electric Inc. Reaction tube
USD725055S1 (en) * 2013-06-28 2015-03-24 Hitachi Kokusai Electric Inc. Reaction tube
USD739832S1 (en) * 2013-06-28 2015-09-29 Hitachi Kokusai Electric Inc. Reaction tube

Patent Citations (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD405429S (en) * 1997-01-31 1999-02-09 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD406113S (en) * 1997-01-31 1999-02-23 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD417438S (en) * 1997-01-31 1999-12-07 Tokyo Electron Limited Quartz outer tube
USD423463S (en) * 1997-01-31 2000-04-25 Tokyo Electron Limited Quartz process tube
USD424024S (en) * 1997-01-31 2000-05-02 Tokyo Electron Limited Quartz process tube
USD405062S (en) * 1997-08-20 1999-02-02 Tokyo Electron Ltd. Processing tube for use in a semiconductor wafer heat processing apparatus
USD405431S (en) * 1997-08-20 1999-02-09 Tokyo Electron Ltd. Tube for use in a semiconductor wafer heat processing apparatus
US5948300A (en) * 1997-09-12 1999-09-07 Kokusai Bti Corporation Process tube with in-situ gas preheating
US20030221779A1 (en) * 2002-03-28 2003-12-04 Kazuyuki Okuda Substrate processing apparatus
USD521464S1 (en) * 2003-11-04 2006-05-23 Tokyo Electron Limited Process tube for semiconductor device manufacturing apparatus
US20080083372A1 (en) * 2006-08-04 2008-04-10 Hisashi Inoue Heat processing apparatus for semiconductor process
USD600659S1 (en) * 2006-09-12 2009-09-22 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD586768S1 (en) * 2006-10-12 2009-02-17 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
US20090194521A1 (en) * 2008-01-31 2009-08-06 Tokyo Electron Limited Thermal processing furnace
USD611013S1 (en) * 2008-03-28 2010-03-02 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
US20090250005A1 (en) * 2008-04-03 2009-10-08 Tokyo Electron Limited Reaction tube and heat processing apparatus for a semiconductor process
USD618638S1 (en) * 2008-05-09 2010-06-29 Hitachi Kokusai Electric, Inc. Reaction tube
USD610559S1 (en) * 2008-05-30 2010-02-23 Hitachi Kokusai Electric, Inc. Reaction tube
USD711843S1 (en) * 2013-06-28 2014-08-26 Hitachi Kokusai Electric Inc. Reaction tube
USD719114S1 (en) * 2013-06-28 2014-12-09 Hitachi Kokusai Electric Inc. Reaction tube
USD720707S1 (en) * 2013-06-28 2015-01-06 Hitachi Kokusai Electric Inc. Reaction tube
USD725055S1 (en) * 2013-06-28 2015-03-24 Hitachi Kokusai Electric Inc. Reaction tube
USD739832S1 (en) * 2013-06-28 2015-09-29 Hitachi Kokusai Electric Inc. Reaction tube

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD791090S1 (en) * 2015-09-04 2017-07-04 Hitachi Kokusai Electric Inc. Reaction tube
USD790490S1 (en) * 2015-09-04 2017-06-27 Hitachi Kokusai Electric Inc. Reaction tube
US11542601B2 (en) * 2016-02-09 2023-01-03 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method of manufacturing semiconductor device
US11952664B2 (en) 2016-02-09 2024-04-09 Kokusai Electric Corporation Substrate processing apparatus and method of manufacturing semiconductor device
USD842824S1 (en) * 2017-08-09 2019-03-12 Kokusai Electric Corporation Reaction tube
USD843958S1 (en) * 2017-08-10 2019-03-26 Kokusai Electric Corporation Reaction tube
USD842823S1 (en) * 2017-08-10 2019-03-12 Kokusai Electric Corporation Reaction tube
USD853979S1 (en) * 2017-12-27 2019-07-16 Kokusai Electric Corporation Reaction tube
USD901406S1 (en) * 2019-03-20 2020-11-10 Kokusai Electric Corporation Inner tube of reactor for semiconductor fabrication
USD931823S1 (en) * 2020-01-29 2021-09-28 Kokusai Electric Corporation Reaction tube
USD986826S1 (en) * 2020-03-10 2023-05-23 Kokusai Electric Corporation Reaction tube
USD1022904S1 (en) * 2021-09-15 2024-04-16 Kokusai Electric Corporation Tubular reactor
USD1022905S1 (en) * 2022-03-01 2024-04-16 Kokusai Electric Corporation Tubular reactor
USD1022906S1 (en) * 2022-03-01 2024-04-16 Kokusai Electric Corporation Tubular reactor
USD1022907S1 (en) * 2022-03-01 2024-04-16 Kokusai Electric Corporation Tubular reactor
USD1019582S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment
USD1019583S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment
USD1019581S1 (en) * 2022-05-30 2024-03-26 Kokusai Electric Corporation Inner tube of reaction tube for semiconductor manufacturing equipment

Also Published As

Publication number Publication date
JP1535455S (en) 2015-10-19
TWD175119S (en) 2016-04-21

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