KR100408615B1 - 스탠바이시에 소비 전류를 삭감 가능한 반도체 장치 - Google Patents

스탠바이시에 소비 전류를 삭감 가능한 반도체 장치 Download PDF

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Publication number
KR100408615B1
KR100408615B1 KR10-2001-0019955A KR20010019955A KR100408615B1 KR 100408615 B1 KR100408615 B1 KR 100408615B1 KR 20010019955 A KR20010019955 A KR 20010019955A KR 100408615 B1 KR100408615 B1 KR 100408615B1
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KR
South Korea
Prior art keywords
signal
circuit
power supply
address
refresh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR10-2001-0019955A
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English (en)
Korean (ko)
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KR20010107547A (ko
Inventor
오오이시쯔까사
쯔지다까하루
이시까와마사또시
히다까히데또
가또히로시
Original Assignee
미쓰비시덴키 가부시키가이샤
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Publication of KR20010107547A publication Critical patent/KR20010107547A/ko
Application granted granted Critical
Publication of KR100408615B1 publication Critical patent/KR100408615B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40622—Partial refresh of memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2227—Standby or low power modes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4067—Refresh in standby or low power modes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
KR10-2001-0019955A 2000-05-24 2001-04-13 스탠바이시에 소비 전류를 삭감 가능한 반도체 장치 Expired - Fee Related KR100408615B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-152651 2000-05-24
JP2000152651A JP2001338489A (ja) 2000-05-24 2000-05-24 半導体装置

Publications (2)

Publication Number Publication Date
KR20010107547A KR20010107547A (ko) 2001-12-07
KR100408615B1 true KR100408615B1 (ko) 2003-12-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0019955A Expired - Fee Related KR100408615B1 (ko) 2000-05-24 2001-04-13 스탠바이시에 소비 전류를 삭감 가능한 반도체 장치

Country Status (4)

Country Link
US (3) US6414894B2 (enExample)
JP (1) JP2001338489A (enExample)
KR (1) KR100408615B1 (enExample)
DE (1) DE10110157B4 (enExample)

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US20020163845A1 (en) 2002-11-07
US6597617B2 (en) 2003-07-22
US6868029B2 (en) 2005-03-15
US20010045579A1 (en) 2001-11-29
JP2001338489A (ja) 2001-12-07
US6414894B2 (en) 2002-07-02
US20040027902A1 (en) 2004-02-12

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