JPH1041482A5 - - Google Patents
Info
- Publication number
- JPH1041482A5 JPH1041482A5 JP1996189424A JP18942496A JPH1041482A5 JP H1041482 A5 JPH1041482 A5 JP H1041482A5 JP 1996189424 A JP1996189424 A JP 1996189424A JP 18942496 A JP18942496 A JP 18942496A JP H1041482 A5 JPH1041482 A5 JP H1041482A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- silicon nitride
- conductive layer
- film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18942496A JP3941133B2 (ja) | 1996-07-18 | 1996-07-18 | 半導体装置およびその製造方法 |
| TW086107957A TW344858B (en) | 1996-07-18 | 1997-06-10 | Highly integrated and reliable DRAM and its manufacture |
| US08/876,908 US6344692B1 (en) | 1996-07-18 | 1997-06-16 | Highly integrated and reliable DRAM adapted for self-aligned contact |
| KR1019970032027A KR100252205B1 (ko) | 1996-07-18 | 1997-07-10 | 반도체장치 및 그 제조방법 |
| US09/920,927 US6818993B2 (en) | 1996-07-18 | 2001-08-03 | Insulation structure for wiring which is suitable for self-aligned contact and multilevel wiring |
| US10/050,169 US6930347B2 (en) | 1996-07-18 | 2002-01-18 | Semiconductor memory device having electrical connection by side contact |
| US10/827,292 US7145242B2 (en) | 1996-07-18 | 2004-04-20 | Highly integrated and reliable DRAM |
| US11/541,726 US20070023812A1 (en) | 1996-07-18 | 2006-10-03 | Highly integrated and reliable DRAM and its manufacture |
| US11/727,709 US7649261B2 (en) | 1996-07-18 | 2007-03-28 | Highly integrated and reliable DRAM and its manufacture |
| US12/314,040 US8143723B2 (en) | 1996-07-18 | 2008-12-03 | Highly integrated and reliable DRAM and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18942496A JP3941133B2 (ja) | 1996-07-18 | 1996-07-18 | 半導体装置およびその製造方法 |
Related Child Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005099235A Division JP2005236321A (ja) | 2005-03-30 | 2005-03-30 | 半導体装置とその製造方法 |
| JP2005099102A Division JP4602818B2 (ja) | 2005-03-30 | 2005-03-30 | 半導体装置の製造方法 |
| JP2005099237A Division JP2005236322A (ja) | 2005-03-30 | 2005-03-30 | 半導体装置とその製造方法 |
| JP2005099236A Division JP2005252280A (ja) | 2005-03-30 | 2005-03-30 | 半導体装置とその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH1041482A JPH1041482A (ja) | 1998-02-13 |
| JPH1041482A5 true JPH1041482A5 (enrdf_load_html_response) | 2005-09-15 |
| JP3941133B2 JP3941133B2 (ja) | 2007-07-04 |
Family
ID=16241025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18942496A Expired - Lifetime JP3941133B2 (ja) | 1996-07-18 | 1996-07-18 | 半導体装置およびその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (7) | US6344692B1 (enrdf_load_html_response) |
| JP (1) | JP3941133B2 (enrdf_load_html_response) |
| KR (1) | KR100252205B1 (enrdf_load_html_response) |
| TW (1) | TW344858B (enrdf_load_html_response) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3941133B2 (ja) * | 1996-07-18 | 2007-07-04 | 富士通株式会社 | 半導体装置およびその製造方法 |
| US6486023B1 (en) * | 1997-10-31 | 2002-11-26 | Texas Instruments Incorporated | Memory device with surface-channel peripheral transistor |
| KR100269510B1 (ko) | 1998-05-20 | 2000-10-16 | 윤종용 | 반도체 장치의 제조 방법 |
| US6458649B1 (en) * | 1999-07-22 | 2002-10-01 | Micron Technology, Inc. | Methods of forming capacitor-over-bit line memory cells |
| US6483144B2 (en) * | 1999-11-30 | 2002-11-19 | Agere Systems Guardian Corp. | Semiconductor device having self-aligned contact and landing pad structure and method of forming same |
| US6420250B1 (en) * | 2000-03-03 | 2002-07-16 | Micron Technology, Inc. | Methods of forming portions of transistor structures, methods of forming array peripheral circuitry, and structures comprising transistor gates |
| KR100569587B1 (ko) * | 2000-06-30 | 2006-04-10 | 주식회사 하이닉스반도체 | 고유전체 캐패시터의 제조 방법 |
| KR100363710B1 (ko) * | 2000-08-23 | 2002-12-05 | 삼성전자 주식회사 | 셀프-얼라인 콘택 구조를 갖는 반도체 장치 및 그 제조방법 |
| KR100355236B1 (ko) | 2000-09-21 | 2002-10-11 | 삼성전자 주식회사 | 자기 정렬된 컨택 형성 방법 및 이를 이용한 반도체소자의 제조 방법 |
| US7170115B2 (en) * | 2000-10-17 | 2007-01-30 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit device and method of producing the same |
| JP2002222858A (ja) * | 2001-01-25 | 2002-08-09 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US20030166885A1 (en) * | 2001-03-02 | 2003-09-04 | Millennium Pharmaceuticals, Inc. | 52948, a human ABC transporter family member and uses therefor |
| KR100421048B1 (ko) * | 2001-09-07 | 2004-03-04 | 삼성전자주식회사 | 국부배선층을 갖는 반도체 소자 및 그 제조방법 |
| JP2003100769A (ja) * | 2001-09-20 | 2003-04-04 | Nec Corp | 半導体装置およびその製造方法 |
| US6717194B2 (en) * | 2001-10-30 | 2004-04-06 | Micron Technology, Inc. | Magneto-resistive bit structure and method of manufacture therefor |
| KR100474537B1 (ko) * | 2002-07-16 | 2005-03-10 | 주식회사 하이닉스반도체 | 산화막용 cmp 슬러리 조성물 및 이를 이용한 반도체소자의 제조 방법 |
| DE10256936B3 (de) * | 2002-12-05 | 2004-09-09 | Infineon Technologies Ag | Verfahren zur Herstellung von selbstjustierten Kontaktierungen auf vergrabenen Bitleitungen |
| KR100505656B1 (ko) * | 2002-12-10 | 2005-08-04 | 삼성전자주식회사 | 스토리지 전극과의 접촉 면적을 보다 확보하기 위해서비트 라인 방향으로 확장된 콘택체를 포함하는 반도체소자 제조 방법 |
| JP2004200400A (ja) * | 2002-12-18 | 2004-07-15 | Toshiba Corp | 半導体装置およびその製造方法 |
| KR100505667B1 (ko) * | 2003-01-16 | 2005-08-03 | 삼성전자주식회사 | 스토리지 전극과 접촉하기 위해 비트 라인 방향으로확장된 콘택체를 포함하는 반도체 소자 제조 방법 |
| US6800892B2 (en) * | 2003-02-10 | 2004-10-05 | Micron Technology, Inc. | Memory devices, and electronic systems comprising memory devices |
| US6921692B2 (en) * | 2003-07-07 | 2005-07-26 | Micron Technology, Inc. | Methods of forming memory circuitry |
| US7100216B2 (en) * | 2003-10-15 | 2006-09-05 | Impact Innovative Products, Llc | Garment with energy dissipating conformable padding |
| US7329953B2 (en) * | 2003-10-29 | 2008-02-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure for reducing leakage currents and high contact resistance for embedded memory and method for making same |
| JP2005217189A (ja) * | 2004-01-29 | 2005-08-11 | Matsushita Electric Ind Co Ltd | 容量素子及びその製造方法 |
| KR100583609B1 (ko) * | 2004-07-05 | 2006-05-26 | 삼성전자주식회사 | 반도체 장치의 게이트 구조물 제조방법 및 이를 이용한불휘발성 메모리 장치의 셀 게이트 구조물 제조방법 |
| KR100850425B1 (ko) * | 2005-09-15 | 2008-08-04 | 동부일렉트로닉스 주식회사 | 플래시 메모리 셀 및 그 제조 방법 |
| TWI297931B (en) * | 2006-01-11 | 2008-06-11 | Ind Tech Res Inst | Cylindrical capacitor and method of manufacturing the same |
| CN100468695C (zh) * | 2006-12-04 | 2009-03-11 | 中芯国际集成电路制造(上海)有限公司 | 改善多晶硅缺陷的方法 |
| KR100843234B1 (ko) * | 2007-01-26 | 2008-07-03 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
| US9190494B2 (en) * | 2008-02-19 | 2015-11-17 | Micron Technology, Inc. | Systems and devices including fin field-effect transistors each having U-shaped semiconductor fin |
| US7742324B2 (en) * | 2008-02-19 | 2010-06-22 | Micron Technology, Inc. | Systems and devices including local data lines and methods of using, making, and operating the same |
| US8866254B2 (en) | 2008-02-19 | 2014-10-21 | Micron Technology, Inc. | Devices including fin transistors robust to gate shorts and methods of making the same |
| US7915659B2 (en) * | 2008-03-06 | 2011-03-29 | Micron Technology, Inc. | Devices with cavity-defined gates and methods of making the same |
| US7808042B2 (en) | 2008-03-20 | 2010-10-05 | Micron Technology, Inc. | Systems and devices including multi-gate transistors and methods of using, making, and operating the same |
| US7898857B2 (en) | 2008-03-20 | 2011-03-01 | Micron Technology, Inc. | Memory structure having volatile and non-volatile memory portions |
| US8546876B2 (en) | 2008-03-20 | 2013-10-01 | Micron Technology, Inc. | Systems and devices including multi-transistor cells and methods of using, making, and operating the same |
| US7969776B2 (en) | 2008-04-03 | 2011-06-28 | Micron Technology, Inc. | Data cells with drivers and methods of making and operating the same |
| US8076229B2 (en) * | 2008-05-30 | 2011-12-13 | Micron Technology, Inc. | Methods of forming data cells and connections to data cells |
| US8148776B2 (en) | 2008-09-15 | 2012-04-03 | Micron Technology, Inc. | Transistor with a passive gate |
| DE102008059500B4 (de) * | 2008-11-28 | 2010-08-26 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung eines Mehr-Gatetransistors mit homogen silizidierten Stegendbereichen |
| JP2010177521A (ja) * | 2009-01-30 | 2010-08-12 | Elpida Memory Inc | 半導体記憶装置の製造方法 |
| US8294511B2 (en) | 2010-11-19 | 2012-10-23 | Micron Technology, Inc. | Vertically stacked fin transistors and methods of fabricating and operating the same |
| CN102420175B (zh) * | 2011-06-15 | 2013-12-04 | 上海华力微电子有限公司 | 设置顶部刻蚀阻挡层以增加接触孔刻蚀制程窗口的方法 |
| US9287405B2 (en) * | 2011-10-13 | 2016-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor |
| CN109755245B (zh) * | 2017-11-08 | 2020-12-01 | 华邦电子股份有限公司 | 存储器装置及其制造方法 |
| KR102747647B1 (ko) | 2020-09-10 | 2024-12-27 | 삼성전자주식회사 | 집적회로 장치 |
| US20250194204A1 (en) * | 2023-12-06 | 2025-06-12 | Nanya Technology Corporation | Method of forming semiconductor structure |
Family Cites Families (84)
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1996
- 1996-07-18 JP JP18942496A patent/JP3941133B2/ja not_active Expired - Lifetime
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1997
- 1997-06-10 TW TW086107957A patent/TW344858B/zh not_active IP Right Cessation
- 1997-06-16 US US08/876,908 patent/US6344692B1/en not_active Expired - Lifetime
- 1997-07-10 KR KR1019970032027A patent/KR100252205B1/ko not_active Expired - Lifetime
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2001
- 2001-08-03 US US09/920,927 patent/US6818993B2/en not_active Expired - Lifetime
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2002
- 2002-01-18 US US10/050,169 patent/US6930347B2/en not_active Expired - Lifetime
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2004
- 2004-04-20 US US10/827,292 patent/US7145242B2/en not_active Expired - Fee Related
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2006
- 2006-10-03 US US11/541,726 patent/US20070023812A1/en not_active Abandoned
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2007
- 2007-03-28 US US11/727,709 patent/US7649261B2/en not_active Expired - Fee Related
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2008
- 2008-12-03 US US12/314,040 patent/US8143723B2/en not_active Expired - Fee Related