JPS62216268A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS62216268A JPS62216268A JP61058737A JP5873786A JPS62216268A JP S62216268 A JPS62216268 A JP S62216268A JP 61058737 A JP61058737 A JP 61058737A JP 5873786 A JP5873786 A JP 5873786A JP S62216268 A JPS62216268 A JP S62216268A
- Authority
- JP
- Japan
- Prior art keywords
- film
- openings
- gate electrode
- insulating film
- side walls
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61058737A JPS62216268A (en) | 1986-03-17 | 1986-03-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61058737A JPS62216268A (en) | 1986-03-17 | 1986-03-17 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62216268A true JPS62216268A (en) | 1987-09-22 |
Family
ID=13092827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61058737A Pending JPS62216268A (en) | 1986-03-17 | 1986-03-17 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62216268A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01258471A (en) * | 1988-04-08 | 1989-10-16 | Matsushita Electron Corp | Manufacture of mos type semiconductor device |
EP0825641A1 (fr) * | 1996-08-21 | 1998-02-25 | Commissariat A L'energie Atomique | Procédé de réalistation d'un transistor à contacts auto-alignés |
US6869849B2 (en) * | 2000-10-25 | 2005-03-22 | Nec Electronics Corporation | Semiconductor device and its manufacturing method |
-
1986
- 1986-03-17 JP JP61058737A patent/JPS62216268A/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01258471A (en) * | 1988-04-08 | 1989-10-16 | Matsushita Electron Corp | Manufacture of mos type semiconductor device |
EP0825641A1 (fr) * | 1996-08-21 | 1998-02-25 | Commissariat A L'energie Atomique | Procédé de réalistation d'un transistor à contacts auto-alignés |
FR2752644A1 (fr) * | 1996-08-21 | 1998-02-27 | Commissariat Energie Atomique | Procede de realisation d'un transistor a contacts auto-alignes |
US6869849B2 (en) * | 2000-10-25 | 2005-03-22 | Nec Electronics Corporation | Semiconductor device and its manufacturing method |
US7439602B2 (en) * | 2000-10-25 | 2008-10-21 | Nec Electronics Corporation | Semiconductor device and its manufacturing method |
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