JPH09251996A5 - - Google Patents

Info

Publication number
JPH09251996A5
JPH09251996A5 JP1996181297A JP18129796A JPH09251996A5 JP H09251996 A5 JPH09251996 A5 JP H09251996A5 JP 1996181297 A JP1996181297 A JP 1996181297A JP 18129796 A JP18129796 A JP 18129796A JP H09251996 A5 JPH09251996 A5 JP H09251996A5
Authority
JP
Japan
Prior art keywords
insulating film
semiconductor device
semiconductor
film
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996181297A
Other languages
English (en)
Japanese (ja)
Other versions
JP3565993B2 (ja
JPH09251996A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP18129796A priority Critical patent/JP3565993B2/ja
Priority claimed from JP18129796A external-priority patent/JP3565993B2/ja
Publication of JPH09251996A publication Critical patent/JPH09251996A/ja
Publication of JPH09251996A5 publication Critical patent/JPH09251996A5/ja
Application granted granted Critical
Publication of JP3565993B2 publication Critical patent/JP3565993B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP18129796A 1995-06-20 1996-06-20 半導体装置の製造方法 Expired - Fee Related JP3565993B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18129796A JP3565993B2 (ja) 1995-06-20 1996-06-20 半導体装置の製造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP17680195 1995-06-20
JP2054096 1996-01-10
JP7-176801 1996-01-10
JP8-20540 1996-01-10
JP18129796A JP3565993B2 (ja) 1995-06-20 1996-06-20 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPH09251996A JPH09251996A (ja) 1997-09-22
JPH09251996A5 true JPH09251996A5 (enrdf_load_html_response) 2004-07-08
JP3565993B2 JP3565993B2 (ja) 2004-09-15

Family

ID=27283088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18129796A Expired - Fee Related JP3565993B2 (ja) 1995-06-20 1996-06-20 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP3565993B2 (enrdf_load_html_response)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7411211B1 (en) * 1999-07-22 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device
JP2005011920A (ja) 2003-06-18 2005-01-13 Hitachi Displays Ltd 表示装置とその製造方法
JP2007053355A (ja) * 2005-07-22 2007-03-01 Semiconductor Energy Lab Co Ltd 半導体装置
WO2007011061A1 (en) 2005-07-22 2007-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP1863090A1 (en) 2006-06-01 2007-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2009053034A (ja) * 2007-08-27 2009-03-12 Mitsumi Electric Co Ltd 半導体圧力センサ及びその製造方法
JP6142166B2 (ja) * 2012-06-21 2017-06-07 株式会社Ｊｏｌｅｄ Ｔｆｔ基板の製造方法および有機ｅｌ表示装置の製造方法
GB2539231B (en) * 2015-06-10 2017-08-23 Semblant Ltd Coated electrical assembly
GB201621177D0 (en) 2016-12-13 2017-01-25 Semblant Ltd Protective coating

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62291064A (ja) * 1986-06-11 1987-12-17 Oki Electric Ind Co Ltd 薄膜トランジスタの製造方法
JPS63131542A (ja) * 1986-11-20 1988-06-03 Nec Kansai Ltd 半導体装置の製造方法
JPS63112337U (enrdf_load_html_response) * 1987-01-12 1988-07-19
JPH02201940A (ja) * 1989-01-30 1990-08-10 Sumitomo Electric Ind Ltd 層間絶縁膜およびその製造方法
JP2842892B2 (ja) * 1989-07-04 1999-01-06 株式会社日立製作所 薄膜トランジスタとその製造方法ならびにそれを用いたマトリクス回路基板と画像表示装置
JP2903134B2 (ja) * 1990-11-10 1999-06-07 株式会社 半導体エネルギー研究所 半導体装置
JP2947535B2 (ja) * 1991-03-27 1999-09-13 キヤノン株式会社 薄膜半導体装置及び受光素子及び光センサ
JPH05181159A (ja) * 1991-12-27 1993-07-23 Toshiba Corp アクティブマトリックス型液晶表示素子
JP3387977B2 (ja) * 1993-05-20 2003-03-17 株式会社半導体エネルギー研究所 絶縁膜の作製方法
JPH0778996A (ja) * 1993-09-07 1995-03-20 Sony Corp 表示素子基板用半導体装置の製造方法
JP3141979B2 (ja) * 1993-10-01 2001-03-07 株式会社半導体エネルギー研究所 半導体装置およびその作製方法

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